CN112467020A - Flip-chip LED light source - Google Patents
Flip-chip LED light source Download PDFInfo
- Publication number
- CN112467020A CN112467020A CN201910864955.4A CN201910864955A CN112467020A CN 112467020 A CN112467020 A CN 112467020A CN 201910864955 A CN201910864955 A CN 201910864955A CN 112467020 A CN112467020 A CN 112467020A
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- 239000004020 conductor Substances 0.000 claims abstract description 49
- 239000000758 substrate Substances 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims description 16
- 230000017525 heat dissipation Effects 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 239000000919 ceramic Substances 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 6
- 238000002955 isolation Methods 0.000 abstract description 5
- 238000004519 manufacturing process Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 7
- 230000005540 biological transmission Effects 0.000 description 4
- 239000007769 metal material Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000008646 thermal stress Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 230000035882 stress Effects 0.000 description 2
- 239000002470 thermal conductor Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8582—Means for heat extraction or cooling characterised by their shape
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/85—Packages
- H10H20/858—Means for heat extraction or cooling
- H10H20/8585—Means for heat extraction or cooling being an interconnection
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- Led Device Packages (AREA)
Abstract
The invention discloses a flip LED light source which comprises a substrate and at least one LED chip, wherein the LED chip is combined with the front surface of the substrate by a first surface with an electrode, and a second surface of the LED chip is a light-emitting surface and is opposite to the first surface; at least one pair of P electrodes and N electrodes of at least one LED chip are in heat conduction connection with the front surface of the substrate through a plurality of heat conductors arranged at intervals, and the maximum dimension a of any one heat conductor in the direction parallel to the first surface is smaller than the minimum distance d between the P electrodes and the N electrodes. According to the flip LED light source, the flip welding technology and the self-alignment isolation technology are combined, so that the yield of chips is improved, and the thermal expansion stress of welding interfaces is reduced; meanwhile, the requirement of the alignment precision of the equipment is reduced, so that the production cost is reduced, and the yield is improved.
Description
Technical Field
The invention relates to an LED light source, in particular to a flip LED light source, and belongs to the technical field of semiconductors.
Background
In the flip-chip LED, in order to ensure that short circuit does not occur between PN electrodes of chips when the chips are bonded in a good yield, a certain distance is required between the PN electrodes, and on the other hand, in order to reduce junction temperature, the contact area between the chips and the substrate is required to be as large as possible, and the distance between the PN electrodes is required to be as small as possible.
For example, the conventional flip-chip LED light source structure is shown in fig. 1, however, due to the limitation of the production technology, the processing precision of the metal layer spacing on the substrate is in the submicron level, and the spacing d1 of the PN electrodes on the conventional chip is greater than or equal to 150 μm; the heat transmission diagram is shown in fig. 2, when heat is transported, the heat needs to be transversely transmitted to the electrode area in the chip and then longitudinally transmitted to the substrate, so that the heat transport distance is increased, and the thermal resistance is increased; in order to improve the heat dissipation capability and the conductivity of the chip, the metal layer of the substrate needs to have the size matched with the electrode of the chip, so that equipment needs to have high alignment precision during packaging, the alignment error of the structure is the distance between PN electrodes, and otherwise, short circuit is easily caused; the chip emits light to generate a large amount of heat, the contact area between the chip and the metal layer material is large, and thermal expansion stress is easily generated on the contact surface due to different thermal expansion coefficients, so that the reliability of the device is reduced.
Disclosure of Invention
The invention mainly adopts a method of combining the traditional flip-chip technology and the isolation self-alignment technology, provides a flip-chip LED light source, improves the yield of chips, reduces junction temperature, reduces production cost and further overcomes the defects in the prior art.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps:
the embodiment of the invention provides a flip LED light source, which comprises a substrate and at least one LED chip, wherein the LED chip is combined with the front surface of the substrate by a first surface with an electrode, and a second surface of the LED chip is a light-emitting surface and is opposite to the first surface; at least one pair of P electrodes and N electrodes of at least one LED chip are in heat conduction connection with the front surface of the substrate through a plurality of heat conductors arranged at intervals, and the maximum dimension a of any one heat conductor in the direction parallel to the first surface is smaller than the minimum distance d between the P electrodes and the N electrodes.
In some more specific embodiments, the epitaxial layer of the LED chip includes a plurality of unit cells capable of emitting light independently, the plurality of unit cells are arranged in series and/or parallel with each other, each unit cell is matched with a P electrode and an N electrode, and each pair of the P electrode and the N electrode is in heat conduction connection with the substrate through a plurality of heat conductors.
The unit cells are device units with independent complete functions, and the conductive semiconductor layers of any two unit cells are isolated, so that any unit cell is electrically independent; through metal interconnection, a plurality of unit cells are electrically connected to form a larger device, and higher device performance is realized, such as: power increase, etc. The unit cell may be a light emitting element such as a semiconductor laser or an LED, or an electronic element such as a diode.
In some more specific embodiments, the flip-chip LED light source includes a plurality of LED chips, each LED chip is coupled to a P-electrode and an N-electrode, and each pair of the P-electrode and the N-electrode is thermally connected to the substrate via a plurality of thermal conductors.
Furthermore, d is more than a and is more than or equal to 2 mu m.
Furthermore, the distance c between two adjacent heat conductors is more than or equal to 1 μm.
In some specific embodiments, at least one pair of pads is further distributed on the front surface of the substrate, and the P electrode and the N electrode are electrically connected to one pad respectively.
In some more specific embodiments, the pads are also electrically connected to a conductive layer disposed on the back side of the substrate via conductive vias that extend through the substrate.
In some specific embodiments, the back surface of the substrate is further covered with a heat dissipation metal layer.
In some more specific embodiments, the thermal conductor is an island-shaped structure formed on the front surface of the substrate, and two adjacent island-shaped structures are electrically isolated from each other.
In some more specific embodiments, the island structure is welded to the P electrode or the N electrode.
In some specific embodiments, the material of the heat conductor includes, but is not limited to, metal or ceramic.
In some more specific embodiments, the shape of the heat conductor includes, but is not limited to, a rectangular parallelepiped, a cube, a cylinder, a truncated cone, or a truncated pyramid.
Compared with the prior art, the invention has at least the following advantages:
1) according to the flip LED light source provided by the invention, the flip welding technology and the self-alignment isolation technology are combined, the size of the heat conductor is not limited by the existing substrate processing technology any more, and the size of the heat conductor is reduced to a micron order;
2) the heat generated by the light emitting area of the flip LED light source provided by the embodiment of the invention can be directly transmitted downwards to the substrate through the heat conductor, so that the heat transmission distance is reduced, the thermal resistance is further reduced, the yield of chips is improved, and the temperature problem is reduced;
3) because the heat conductors are electrically isolated, and the width of the heat conductors is less than the distance between the P, N electrodes, the short circuit problem cannot be caused, the requirement on the alignment precision of equipment is further reduced, the alignment error is half of the area of the P, N electrode, and the cost is reduced;
4) the contact area of a single heat conductor and the P electrode or the N electrode is small, the thermal stress of the contact surface is greatly reduced, and the reliability of the device is improved;
5) the flip LED light source provided by the embodiment of the invention reduces the thermal expansion stress of the welding interface.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic diagram of a prior art inverted LED light source;
FIG. 2 is a schematic diagram of heat transfer of a flip-chip LED light source of the prior art;
fig. 3 is a schematic structural diagram of a flip-chip LED light source in embodiment 1 of the present invention;
fig. 4 is a schematic structural diagram of a flip-chip LED light source in embodiment 1 of the present invention;
fig. 5 is a schematic structural diagram of a flip-chip LED light source in embodiment 2 of the present invention;
FIG. 6 is a schematic diagram of heat transfer from a flip-chip LED light source in an exemplary embodiment of the invention.
Detailed Description
In view of the deficiencies in the prior art, the inventors of the present invention have made extensive studies and extensive practices to provide technical solutions of the present invention. The technical solution, its implementation and principles, etc. will be further explained as follows.
Example 1
Referring to fig. 3 and 4, a flip-chip LED light source includes a substrate 30 and at least one LED chip 10, the LED chip 10 is combined with the front surface of the substrate 30 by a first surface having electrodes, and a second surface of the LED chip 10 is a light emitting surface and is opposite to the first surface.
The LED chip is a high-voltage high-power integrated flip chip with good flatness, and the epitaxial layer of the LED chip 10 can comprise an N-type GaN layer 11, an active layer 12 and a P-type GaN layer 13 which are sequentially formed on a substrate 20; further, an insulating layer 14 may be further provided on the epitaxial layer; the epitaxial layer is processed to form a plurality of unit cells which are arranged in an array form, the plurality of unit cells are connected in series and/or in parallel, each unit cell is matched with a P electrode 15 and an N electrode 16, the P electrode 15 and the N electrode 16 are arranged at intervals, and the minimum distance between the P electrode 15 and the N electrode 16 can be defined as d.
Alternatively, the flip LED light source includes a substrate 30 and a plurality of LED chips (the LED chips are general flip chips with good flatness) 10, the LED chips are connected in series and/or in parallel, each LED chip 10 is matched with a P electrode 15 and an N electrode 16, each pair of P electrode 15 and N electrode 16 is spaced apart from each other, and the minimum distance between the two can be defined as d.
A plurality of heat conductors 40 arranged at intervals are arranged on the front surface of the insulating substrate 30, the heat conductors 40 are island-shaped structures formed on the front surface of the substrate 40, two adjacent island-shaped structures are electrically isolated from each other, the LED chip 10 is combined with the front surface of the substrate 30 by a first surface with a P electrode 15 and an N electrode 16, the P electrode 15 and the N electrode 16 are welded on the heat conductors 40, and the P electrode 15 and the N electrode 16 of the LED chip are in heat conduction connection with the front surface of the substrate 30 through the plurality of heat conductors 40 arranged at intervals; in the direction parallel to the first surface of the LED chip 10, the maximum dimension of the heat conductor can be defined as a, and the distance between two adjacent heat conductors can be defined as c, wherein d > a ≧ 2 μm, and c ≧ 1 μm.
As can be seen from fig. 4, the relative position relationship between the P electrode 15, the N electrode 16 and the heat conductor 40 can be seen in the area a and the area B, and since the heat conductors are electrically isolated and the maximum size of the heat conductor is smaller than the distance between the P electrode and the N electrode, the short circuit problem is not generated, the alignment accuracy requirement of the device is low, and the alignment error is half of the area size of the P electrode or the N electrode; as shown in fig. 3 or 4, when flip-chip packaging is performed, the P electrode and the N electrode are not short-circuited even if different positional relationships are generated between the heat conductor and the P electrode and between the heat conductor and the N electrode; and the contact area of the single heat conductor and the P electrode or the N electrode is small, the thermal stress of the contact surface is greatly reduced, and the reliability of the device is improved.
And a pad 51 and a pad 52 are further provided on the front surface of the insulating substrate 30, the pad 51 and the pad 52 are respectively provided on both sides of the plurality of heat conductors 40, the P-electrode 15 and the N-electrode 16 are electrically connected to the pad 51 and the pad 52, respectively, and an external lead 60 is further electrically connected to the pad 51 and the pad 52.
The heat conductor 40 may be made of metal or ceramic, and the shape of the heat conductor 40 may be rectangular parallelepiped, square, cylinder, circular truncated cone, or truncated pyramid.
It should be noted that the minimum distance d between the P electrode 15 and the N electrode 16 is larger than the maximum dimension a of the heat conductor, and as can be understood from fig. 3 or fig. 4, the minimum distance between the P electrode 15 and the N electrode 16 and the maximum dimension of the heat conductor are distances in the same reference direction, for example, a direction parallel to the first surface of the LED chip 10 may be used as a reference direction, or a width direction of the heat conductor may be used as a reference direction.
Referring to fig. 6, in the embodiment of the invention, heat generated by the light emitting region of the flip-chip LED light source can be directly transmitted downward to the insulating substrate through the heat conductor, so that the heat transmission distance is reduced, and the thermal resistance is reduced.
Example 2
Referring to fig. 5, a structure of a flip-chip LED light source in the present embodiment is substantially the same as the structure of the flip-chip LED light source in embodiment 1, except that in the present embodiment, an external lead 60 is not disposed on the front surface of the insulating substrate 30, but a conductive layer 53 and a conductive layer 54 are disposed on the back surface of the insulating substrate 30 at intervals, and the pad 51 and the pad 52 are electrically connected to the conductive layer 53 and the conductive layer 54 disposed on the back surface of the substrate through the conductive channel 31 and the conductive channel 32 penetrating through the substrate 30, respectively, so that an electrical lead can be LED out from the back surface of the insulating substrate. The conducting channel and the conducting layer can be made of metal materials, so that heat generated by the LED chip during working can be transferred out in time.
In some more specific embodiments, a heat dissipation metal layer 70 is further disposed on the back surface of the substrate 30, the heat dissipation metal layer 70 is electrically isolated from the above conductive layers 53 and 54, and the heat dissipation metal layer 70 can be in contact with a heat sink.
It should be noted that, when the material of the heat conductor in the embodiment of the present invention is metal, a metal material with good thermal conductivity may be selected, and the material of the conductive metal layer may be a metal material with good electrical conductivity, which is not listed here.
Self-aligned isolation technique: because the metal islands (namely the island-shaped heat conductors) which are electrically isolated and have the size smaller than the electrode spacing of the chip are arranged on the substrate, when the flip chip is welded with the substrate, the chip electrode and the metal islands can realize self-alignment welding of the chip without accurate alignment, and no short circuit exists between the electrodes.
According to the flip LED light source provided by the invention, the flip welding technology and the self-alignment isolation technology are combined, the size of the heat conductor is not limited by the existing substrate processing technology any more, and the size of the heat conductor is reduced to a micron order; in addition, heat generated by the light emitting area of the flip LED light source provided by the embodiment of the invention can be directly transmitted downwards to the substrate through the heat conductor, so that the heat transmission distance is reduced, the thermal resistance is further reduced, the yield of chips is improved, and the junction temperature is reduced; and, because the electricity is isolated between the heat conductors, and the width of the heat conductor is smaller than the interval of P, N electrodes, so the short circuit problem can not be produced, and further the requirement to the alignment precision of the equipment is reduced, the alignment error is half of the area size of P, N electrodes, and the cost is reduced; the contact area of the single heat conductor and the P electrode or the N electrode is small, the thermal stress of the contact surface is greatly reduced, and the reliability of the device is improved.
Claims (10)
1. A flip LED light source is characterized by comprising a substrate and at least one LED chip, wherein the LED chip is combined with the front surface of the substrate by a first surface with an electrode, and a second surface of the LED chip is a light-emitting surface and is opposite to the first surface; at least one pair of P electrodes and N electrodes of at least one LED chip are in heat conduction connection with the front surface of the substrate through a plurality of heat conductors arranged at intervals, and the maximum dimension a of any one heat conductor in the direction parallel to the first surface is smaller than the minimum distance d between the P electrodes and the N electrodes.
2. The flip-chip LED light source of claim 1, wherein: the epitaxial layer of the LED chip comprises a plurality of unit cells capable of independently emitting light, the unit cells are mutually connected in series and/or in parallel, each unit cell is matched with a P electrode and an N electrode, and each pair of the P electrode and the N electrode is in heat conduction connection with the substrate through a plurality of heat conductors.
3. The flip-chip LED light source of claim 1 or 2, wherein: the flip LED light source comprises a plurality of LED chips, each LED chip is matched with a P electrode and an N electrode, and each pair of the P electrode and the N electrode is in heat conduction connection with the substrate through a plurality of heat conductors.
4. The flip-chip LED light source of claim 1, wherein: d is more than a and is more than or equal to 2 mu m.
5. The flip-chip LED light source of claim 1, wherein: the distance c between two adjacent heat conductors is more than or equal to 1 mu m.
6. The flip-chip LED light source of claim 1, wherein: the front surface of the substrate is also provided with at least one pair of bonding pads, and the P electrode and the N electrode are respectively electrically connected with one bonding pad.
7. The flip-chip LED light source of claim 6, wherein: the bonding pad is also electrically connected with a conductive layer arranged on the back surface of the substrate through a conductive channel penetrating through the substrate.
8. The flip-chip LED light source of claim 1, wherein: and the back surface of the substrate is also covered with a heat dissipation metal layer.
9. The flip-chip LED light source of claim 1, wherein: the heat conductor is an island-shaped structure formed on the front surface of the substrate, and two adjacent island-shaped structures are electrically isolated from each other; and/or the island-shaped structure is fixedly welded with the P electrode or the N electrode.
10. The flip-chip LED light source of claim 1, wherein: the material of the heat conductor comprises metal or ceramic; and/or the shape of the heat conductor comprises a cuboid, a cube, a cylinder, a round table or a frustum of a pyramid.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910864955.4A CN112467020A (en) | 2019-09-09 | 2019-09-09 | Flip-chip LED light source |
| PCT/CN2020/101339 WO2021047273A1 (en) | 2019-09-09 | 2020-07-10 | Flip-chip led light source |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910864955.4A CN112467020A (en) | 2019-09-09 | 2019-09-09 | Flip-chip LED light source |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112467020A true CN112467020A (en) | 2021-03-09 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910864955.4A Pending CN112467020A (en) | 2019-09-09 | 2019-09-09 | Flip-chip LED light source |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN112467020A (en) |
| WO (1) | WO2021047273A1 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113779922A (en) * | 2021-09-15 | 2021-12-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Welding spot layout design method of Mini-LED display module and application thereof |
| CN118630004A (en) * | 2024-08-12 | 2024-09-10 | 深圳爱图仕创新科技股份有限公司 | Lamp beads and light source modules |
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| JP2003110148A (en) * | 2001-09-28 | 2003-04-11 | Nichia Chem Ind Ltd | Semiconductor light-emitting device |
| CN101119601A (en) * | 2007-08-24 | 2008-02-06 | 武汉华灿光电有限公司 | Method of manufacturing flip welding LED chip |
| CN105575990A (en) * | 2010-09-24 | 2016-05-11 | 首尔半导体株式会社 | Wafer-level light emitting diode package and method of fabricating the same |
| WO2019056630A1 (en) * | 2017-09-25 | 2019-03-28 | 广东工业大学 | Ultraviolet led light source flip chip structure |
| CN210200761U (en) * | 2019-09-09 | 2020-03-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flip-chip LED light source |
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| TWI294694B (en) * | 2005-06-14 | 2008-03-11 | Ind Tech Res Inst | Led wafer-level chip scale packaging |
| DE102010025320B4 (en) * | 2010-06-28 | 2021-11-11 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Optoelectronic component and method for its production |
| CN104979461A (en) * | 2014-04-08 | 2015-10-14 | 林锦源 | Light emitting structure |
| CN106783816A (en) * | 2015-11-24 | 2017-05-31 | 林锦源 | Light emitting diode array structure |
| CN107146840A (en) * | 2017-06-30 | 2017-09-08 | 苏州瑞而美光电科技有限公司 | A flip-chip LED chip array structure and preparation method thereof |
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2019
- 2019-09-09 CN CN201910864955.4A patent/CN112467020A/en active Pending
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2020
- 2020-07-10 WO PCT/CN2020/101339 patent/WO2021047273A1/en active Application Filing
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| JP2003110148A (en) * | 2001-09-28 | 2003-04-11 | Nichia Chem Ind Ltd | Semiconductor light-emitting device |
| CN101119601A (en) * | 2007-08-24 | 2008-02-06 | 武汉华灿光电有限公司 | Method of manufacturing flip welding LED chip |
| CN105575990A (en) * | 2010-09-24 | 2016-05-11 | 首尔半导体株式会社 | Wafer-level light emitting diode package and method of fabricating the same |
| WO2019056630A1 (en) * | 2017-09-25 | 2019-03-28 | 广东工业大学 | Ultraviolet led light source flip chip structure |
| CN210200761U (en) * | 2019-09-09 | 2020-03-27 | 中国科学院苏州纳米技术与纳米仿生研究所 | Flip-chip LED light source |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113779922A (en) * | 2021-09-15 | 2021-12-10 | 中国科学院苏州纳米技术与纳米仿生研究所 | Welding spot layout design method of Mini-LED display module and application thereof |
| CN113779922B (en) * | 2021-09-15 | 2023-08-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | Welding spot layout design method of Mini-LED display module and application thereof |
| CN118630004A (en) * | 2024-08-12 | 2024-09-10 | 深圳爱图仕创新科技股份有限公司 | Lamp beads and light source modules |
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| WO2021047273A1 (en) | 2021-03-18 |
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Inventor after: Ma Ying Inventor after: Tang Wenting Inventor after: Cai Yong Inventor before: Tang Wenting Inventor before: Cai Yong |