CN112464710B - Sensing element substrate - Google Patents

Abstract

The invention discloses a sensing element substrate which comprises a substrate, an active element, a photosensitive unit and a light collimation structure. The active device is located on the substrate and includes a drain. The photosensitive unit is positioned on the substrate and is electrically connected with the active element. The light collimation structure is positioned between the substrate and the photosensitive unit. The orthographic projection of the light collimation structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, and at least one part of the light collimation structure and the drain electrode or the grid electrode belong to the same film layer.

Description

Sensing element substrate

technical field

The present disclosure relates to a sensing element substrate.

Background technique

In recent years, electronic devices are often equipped with sensing elements to expand their functions. For example, electronic devices can be equipped with fingerprint sensing elements, so as to serve as a certificate for protecting the information security of the electronic devices. Fingerprint sensing elements are usually fabricated on a pixel array substrate, but this will lead to a problem of lower pixel aperture ratio. In order to increase the aperture ratio, one of the solutions is to fabricate the fingerprint sensing element on the opposite substrate, but an additional light control film must be attached to increase the sensitivity of the fingerprint sensing element. However, this will not only increase the production cost and increase the thickness of the panel, but also cause a problem of poor viewing angle. Therefore, there is an urgent need for a method that can solve the aforementioned problems.

Contents of the invention

The disclosure provides a sensing element substrate, which can simultaneously have the advantages of thinning and good fingerprint resolution.

The sensor substrate of the present disclosure includes a substrate, an active device, a photosensitive unit and a light collimation structure. The active element is located on the substrate, and the active element includes a drain. The photosensitive unit is located on the substrate and is electrically connected with the active element. The light collimating structure is located between the substrate and the photosensitive unit. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, the drain electrode and the light collimating structure belong to the same film layer, and the material of the drain electrode is the same as that of the light collimating structure.

In an embodiment of the present disclosure, the above sensing element substrate further includes an interlayer dielectric layer. The interlayer dielectric layer is located between the substrate and the photosensitive unit and has a plurality of through holes. The light collimating structure includes a plurality of extensions, each extension is located in each through hole of the interlayer dielectric layer, the extension direction of the extension is substantially parallel to the normal direction of the substrate, and the distance between the extensions is 2 microns to 10 microns.

In an embodiment of the present disclosure, the above sensing element substrate further includes a control line. The control line is located on the substrate and is electrically connected with the active element, and the extension part is substantially perpendicular to the control line.

In an embodiment of the present disclosure, the aspect ratio of each of the above-mentioned extending portions is 0.1-6.

In an embodiment of the present disclosure, the above-mentioned extending portion further includes a plurality of first sub-extending portions and a plurality of second sub-extending portions. Each second sub-extension part and each first sub-extension part are arranged alternately, so that the second sub-extension part and the first sub-extension part form a mesh pattern, and the number of the first sub-extension part is greater than 2, and the second sub-extension part The number of parts is greater than 2.

In an embodiment of the present disclosure, the above sensing element substrate further includes a control line. The control line is located on the substrate and is electrically connected with the active element, and the extending direction of the second sub-extension part is intersected with the control line.

In an embodiment of the present disclosure, the above sensing element substrate further includes a control line. The control line is located on the substrate and is electrically connected with the active element, and the second sub-extension part is substantially parallel to the control line.

Based on the above, in the sensing element substrate of the present disclosure, by disposing a light collimation structure between the substrate and the photosensitive unit, the light reflected by the peaks and troughs of the fingerprint can be more collimated toward the path of the photosensitive unit, and At least a part of the light collimating structure belongs to the same film layer as the drain or the grid. Since there is no need to attach a light collimating film layer on the display device, the display device can have the advantages of thinning and good fingerprint resolution at the same time. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, so as not to affect the aperture ratio or viewing angle of the pixel array substrate.

The sensor substrate of the present disclosure includes a substrate, an active device, a photosensitive unit and a light collimation structure. The active device is located on the substrate, and the active device includes a gate and a drain. The photosensitive unit is located on the substrate and is electrically connected with the active element. The light collimating structure is located between the substrate and the photosensitive unit. The orthographic projection of the light collimation structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, the light collimation structure includes a plurality of extensions, the extension direction of the extensions is substantially parallel to the normal direction of the substrate, and each extension has The connected lower part and upper part belong to the same film layer as the gate, and the material of the lower part is the same as that of the gate, and the upper part and the drain belong to the same film layer, and the material of the upper part is the same as that of the drain.

In an embodiment of the present disclosure, the lower portions of the above-mentioned extensions contact the substrate, and the aspect ratio of each extension is 0.1-6.

In an embodiment of the present disclosure, the above sensing element substrate further includes an interlayer dielectric layer. The interlayer dielectric layer is located between the substrate and the photosensitive unit and has a plurality of through holes. The light collimation structure further includes a plurality of islands above the upper part of the extension, the upper and lower parts of each extension are located in the through holes of the interlayer dielectric layer, and the islands are located outside the through holes.

Based on the above, in the sensing element substrate of the present disclosure, by disposing a light collimation structure between the substrate and the photosensitive unit, the light reflected by the peaks and troughs of the fingerprint can be more collimated toward the path of the photosensitive unit, and The gate and the lower part of the light collimation structure belong to the same film layer, and the material of the gate is the same as that of the lower part of the light collimation structure, and the drain electrode and the upper part of the light collimation structure belong to the same film layer, and the material of the drain electrode is the same as that of the lower part of the light collimation structure. The material of the upper part of the light collimating structure is the same, and since there is no need to attach a light collimating film layer to the display device, the display device can simultaneously have the advantages of lightness and good fingerprint resolution. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, so as not to affect the aperture ratio or viewing angle of the pixel array substrate.

Description of drawings

By reading the following detailed descriptions together with the corresponding diagrams, you can understand the various aspects of this disclosure. It should be noted that many features in the drawings are not drawn to scale in accordance with standard practice in this industry. In fact, the dimensions of the described features may be arbitrarily increased or decreased for clarity of discussion.

FIG. 1 is a schematic cross-sectional view of a display device according to an embodiment of the disclosure.

FIG. 2 is a schematic top view of the sensing element substrate of FIG. 1 .

Fig. 3A is a schematic cross-sectional view along the line A-A' of Fig. 2 .

Fig. 3B is a schematic cross-sectional view of the section line B-B' in Fig. 2 .

Fig. 3C is a schematic cross-sectional view of the section line C-C' in Fig. 2 .

Fig. 3D is a schematic cross-sectional view according to the section D-D' of Fig. 2 .

FIG. 4 is a schematic cross-sectional view of a sensing element substrate according to another embodiment of the disclosure.

FIG. 5A is a schematic top view of a sensing element substrate according to another embodiment of the disclosure.

5B is a schematic top view of a sensing element substrate according to another embodiment of the disclosure.

FIG. 6A is a schematic cross-sectional view of a sensing element substrate according to another embodiment of the disclosure.

FIG. 6B is a schematic cross-sectional view of a sensing element substrate according to another embodiment of the disclosure.

FIG. 7A is a schematic cross-sectional view of a sensing element substrate according to another embodiment of the disclosure.

7B is a schematic cross-sectional view of a sensing element substrate according to another embodiment of the disclosure.

Among them, reference signs:

10 display device

100 sensing element substrate

100a sensing element substrate

100b sensing element substrate

100c, 100d, 100e sensing element substrate

102 photosensitive units

102A first electrode layer

102B second electrode layer

102S sensing layer

104 light collimation structure

104A extension

104B Island Department

106 buffer layers

108 insulating layers

110 interlayer dielectric layer

112 insulating layer

114 passivation layer

200 pixel array substrate

300 display medium layer

400 backlight module

A1 angle

A-A' line

B-B' section line

BM black matrix

C-C' line

CF color filter pattern

CH semiconductor channel layer

CL control line

D drain

D1 first direction

D2 second direction

D-D' section line

DL data cable

E1 first sub extension

E2 Second Sub-Extension

F finger

G grid

H1 through hole

L1 light

OC cover

lower part of P1

P2 upper part

S source

S1 pitch

SL signal line

SM shading layer

SUB substrate

T active components

TH1, TH2, TH3, TH4 contact holes

H1, H2, H3 through holes

Detailed ways

In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

FIG. 1 is a schematic cross-sectional view of a display device 10 according to an embodiment of the disclosure. The display device 10 includes a sensing element substrate 100 , a pixel array substrate 200 , a display medium layer 300 and a backlight module 400 . The display medium layer 300 is located between the pixel array substrate 200 and the sensing element substrate 100 , and the backlight module 400 is disposed under the pixel array substrate 200 , in other words, the pixel array substrate 200 is located between the sensing element substrate 100 and the backlight module 400 . FIG. 1 omits some components of the sensing element substrate 100 and components of the pixel array substrate 200 . 2 is a schematic top view of the sensing element substrate 100 of FIG. 1 , FIG. 3A is a schematic cross-sectional view along the section line AA' of FIG. 2 , and FIG. 3B is a schematic cross-sectional view of the section line BB' of FIG. 2 . 3C is a schematic cross-sectional view along line CC' in FIG. 2 , and FIG. 3D is a schematic cross-sectional view along line DD' in FIG. 2 . Please refer to FIG. 1 , FIG. 2 and FIG. 3A at the same time. The sensing element substrate 100 includes a substrate SUB, an active device T located on the substrate SUB, a photosensitive unit 102 and a light collimation structure 104 . In one embodiment, the sensing element substrate 100 further includes a light-shielding layer SM, a buffer layer 106 , an insulating layer 108 and an interlayer dielectric layer 110 . The light-shielding layer SM is located on the substrate SUB, and the material of the light-shielding layer SM is, for example, metal, resin, graphite or other applicable materials. The light-shielding layer SM can be used to avoid the problem of light leakage generated by the active device T. The buffer layer 106 is located above the light-shielding layer SM and above the substrate SUB. The material of the substrate SUB is, for example, glass, quartz or organic polymer.

The active device T is located on the insulating layer 108 , and the active device T includes a gate G, a source S, a drain D and a semiconductor channel layer CH. The semiconductor channel layer CH is located on the insulating layer 108 , the orthographic projection of the gate G on the substrate SUB overlaps the orthographic projection of the semiconductor channel layer CH on the substrate SUB, and the insulating layer 108 is sandwiched between the gate G and the semiconductor channel layer CH.

In this embodiment, the sensing element substrate 100 further includes data lines DL, control lines CL and signal lines SL on the substrate SUB. For the convenience of illustration, the first direction D1 and the second direction D2 are shown in FIG. 2 , and the first direction D1 and the second direction D2 are different. For example, the first direction D1 and the second direction D2 are respectively the longitudinal directions in FIG. 1 and transverse directions, and they are orthogonal to each other. In this embodiment, the control line CL extends along the second direction D2, and the data line DL and the signal line SL extend along the first direction D1. The gate G of the active device T is electrically connected to the control line CL. In this embodiment, the gate G and the control line CL belong to the same film layer, that is, they are patterned from the same material layer. That is, the material of the gate G is the same as that of the control line CL. The interlayer dielectric layer 110 is located on the insulating layer 108 , the source S and the drain D are located on the insulating layer 108 , and the source S is electrically connected to the data line DL. In this embodiment, the source S, the drain D, the data line DL, and the signal line SL belong to the same film layer, that is, they are patterned from the same material layer. That is to say, the materials of the source S, the drain D, the data line DL, and the signal line SL are the same. The source S and the drain D are electrically connected to the semiconductor channel layer CH through contact holes TH1 and TH2 respectively. The contact holes TH1 and TH2 are located in the insulating layer 108 and the interlayer dielectric layer 110 , for example. The above-mentioned active device T is illustrated as a top-gate thin film transistor, but the disclosure is not limited thereto. In other embodiments, the above-mentioned active device T may also be a bottom-gate thin film transistor, or other suitable thin film transistors. In this embodiment, based on the consideration of conductivity, the materials of the gate G, the control line CL, the data line DL, the signal line SL, the drain D and the source S are metal materials. However, the present invention is not limited thereto. According to other embodiments, the gate G, the control line CL, the data line DL, the signal line SL, the drain D and the source S can also use other conductive materials, such as: alloy, metal material Nitride, oxide of metal material, oxynitride of metal material, or other suitable materials, or stacked layers of metal material and other conductive materials.

The sensing element substrate 100 further includes a black matrix BM, a color filter pattern CF and a cover plate OC. The black matrix BM is located on the active device T, and the color filter pattern CF is located on the black matrix BM. The color filter pattern CF includes, for example, a red filter pattern, a green filter pattern, and a blue filter pattern. The color filter pattern CF is disposed corresponding to the opening area of the pixel array substrate 200 . The black matrix BM is, for example, disposed corresponding to the control lines CL, the data lines DL, the signal lines SL, the active elements T and the photosensitive units 102 . The light collimation structure 104 is located between the substrate SUB and the photosensitive unit 102 . In this embodiment, the orthographic projection of the light collimating structure 104 on the substrate SUB falls within the orthographic projection of the photosensitive unit 102 on the substrate SUB, so as not to affect the aperture ratio or viewing angle of the pixel array substrate 200 . The cover OC is disposed opposite to the substrate SUB, and the material of the cover OC is, for example, a flexible substrate (such as a plastic substrate) or a rigid substrate (such as a glass substrate or a quartz substrate). In this embodiment, the material of the light collimating structure 104 is a metal material. However, the present invention is not limited thereto. According to other embodiments, the material of the light collimating structure 104 can also use other conductive materials, for example: alloys, nitrides of metal materials, oxides of metal materials, oxynitrides of metal materials, or other suitable materials, or stacked layers of metal materials and other conductive materials.

The sensing element substrate 100 in this embodiment is assembled with the cover plate OC facing the pixel array substrate 200 , that is, the cover plate OC is located between the pixel array substrate 200 and the substrate SUB. What the user's finger F touches or approaches is the outside of the substrate SUB of the sensing element substrate 100. For example, when the user's finger F touches the substrate SUB of the sensing element substrate 100, the light L1 emitted by the backlight module 400 illuminates After reaching the peaks and troughs of the fingerprint, the peaks and troughs will reflect light beams with different intensities, so that the multiple photosensitive units 102 corresponding to the peaks and troughs respectively receive the reflected light beams with different intensities, so that the sensing element substrate 100 can obtain the user's fingerprint image. The light collimation structure 104 can make the path of the light reflected by the crests and troughs of the fingerprint toward the photosensitive unit 102 more collimated. Thereby, the fingerprint resolution of the sensing element substrate 100 can be improved. In this embodiment, the drain D, the source S and the light collimating structure 104 belong to the same film layer, that is, they are patterned from the same material layer. That is to say, the material of the light collimating structure 104 is the same as that of the drain D and the source S. For example, in an embodiment where the materials of the drain D and the source S include metal materials, the light collimating structure 104 also includes metal materials. Since there is no need to attach an additional light-collimating film layer to the display device 10, the display device 10 has the advantages of thinner and thinner and better fingerprint resolution at the same time.

The photosensitive unit 102 is located on the buffer layer 106 . The photosensitive unit 102 includes a first electrode layer 102A, a second electrode layer 102B opposite to the first electrode layer 102A, and a sensing layer 102S interposed between the first electrode layer 102A and the second electrode layer 102B. The second electrode layer 102B is closer to the pixel array substrate 200 than the first electrode layer 102A. The first electrode layer 102A is electrically connected to the signal line SL. In this embodiment, please refer to FIG. 3B , the first electrode layer 102A is electrically connected to the signal line SL through the contact hole TH3 . The material of the first electrode layer 102A includes a transparent conductive material, such as indium tin oxide, indium zinc oxide, aluminum tin oxide, aluminum zinc oxide, indium gallium zinc oxide or other suitable oxides or at least two of the above or stacked layers. The material of the sensing layer 102S is, for example, silicon-rich oxide (SRO) or other suitable materials.

The photosensitive unit 102 is electrically connected to the active device T, for example, the second electrode layer 102B is electrically connected to the active device T. In this embodiment, the second electrode layer 102B is electrically connected to the active device T through the contact hole TH4 , for example, the contact hole TH4 is located in the insulating layer 108 . The material of the second electrode layer 102B is, for example, molybdenum, aluminum, titanium, copper, gold, silver or other conductive materials or a stack of two or more of the above materials.

In this embodiment, the sensing element substrate 100 further includes an insulating layer 112 and a passivation layer 114, the insulating layer 112 covers the active element T and the light collimation structure 104, the passivation layer 114 is located on the insulating layer 112, and the passivation layer 114 covers the photosensitive unit 102 (for example, the first electrode layer 102A, the second electrode layer 102B).

The interlayer dielectric layer 110 is located between the substrate SUB and the photosensitive unit 102 and has a plurality of through holes H1. The light collimating structure 104 includes a plurality of extensions 104A, and each extension 104A is located in each through hole H1 of the interlayer dielectric layer 110. The formation method of the through hole H1 and the contact holes TH1 and TH2 of the interlayer dielectric layer 110 is, for example, A layer of photoresist material (not shown) is formed on the interlayer dielectric layer 110, and then a photomask is used to pattern the photoresist material to form a patterned photoresist layer, and then the interlayer dielectric layer 110 is etched to The through hole H1 and the contact holes TH1 and TH2 are formed, and then the patterned photoresist material is removed. Since the through hole H1 and the contact holes TH1 and TH2 are prepared by the same photomask, there is no need for an additional photomask to make the through hole H1, which helps to reduce the manufacturing cost and does not need to retest the interlayer dielectric layer 110. Etching parameters. In this embodiment, the light collimating structure 104 extends to the through hole H2 of the insulating layer 108 and contacts the top surface of the buffer layer 106 .

The extension direction of the extensions 104A is substantially parallel to the normal direction of the substrate SUB board, and the spacing S1 between the extensions 104A is 2 microns to 10 microns, and the spacing S1 is small enough to allow the light to travel between adjacent extensions 104A Traveling at a small angle, the light reflected by the crests and troughs of the fingerprint can be controlled to be more collimated along the path of the light traveling toward the photosensitive unit 102 . In this embodiment, the light collimating structure 104 further includes a plurality of island portions 104B located above the extension portion 104A, and the island portions 104B are located outside the through hole H1 .

In this embodiment, the section of the extension portion 104A along the section line D-D' is sheet-shaped (see FIG. 3D ). In the case of viewing from the top view direction, the extension portion 104A is a strip extending along the first direction D1, so that the light collimation structure 104 has the advantage of simple manufacturing process. For example, the extension portion 104A is substantially parallel to the data line DL and the data line DL. Signal line SL. In one embodiment, the number of the extensions 104A is more than two. The aspect ratio of each extension portion 104A is 0.1 to 6, and the aspect ratio is large enough to further improve the light collimation effect. In this embodiment, the light collimating structure 104 is located on the buffer layer 106 . In other embodiments, the light collimating structure 104 may extend into the through hole H3 in the buffer layer 106 (see FIG. 4 ) and contact the substrate SUB.

FIG. 5A is a schematic top view of a sensing element substrate 100 a according to another embodiment of the disclosure. The main difference between the sensing element substrate 100 a of FIG. 5A and the sensing element substrate 100 of FIG. 2 is that the extension portion 104A further includes a plurality of first sub-extension portions E1 and a plurality of second sub-extension portions E2 . In one embodiment, the second sub-extensions E2 and the first sub-extensions E1 are arranged alternately, so that the second sub-extensions E2 and the first sub-extensions E1 form a mesh pattern, which can further improve the light collimation effect . Moreover, the number of the first sub-extensions E1 is greater than 2, and the number of the second sub-extensions E2 is greater than 2. In this embodiment, the second sub-extension portion E2 is in the form of a sheet extending along the second direction D2. For example, the second sub-extension portion E2 is substantially parallel to the control line CL. In other embodiments, when viewing the second sub-extending portion E2 from a plan view direction, the second sub-extending portion E2 and the first sub-extending portion E1 form a non-right angle A1 (see FIG. 5B ).

FIG. 6A is a schematic cross-sectional view of a sensing element substrate 100b according to another embodiment of the present disclosure. The main difference between the sensing element substrate 100b in FIG. 6A and the sensing element substrate 100 in FIG. 3B is that each extension 104A has a connected lower part P1 and an upper part P2, and the lower part P1 and the gate G belong to the same film layer, that is, they are made of the same film layer. The material layer is patterned. That is, the material of the lower part P1 is the same as that of the gate G. For example, in an embodiment where the material of the gate G includes a metal material, the lower part P1 also includes a metal material. The upper part P2 belongs to the same film layer as the drain electrode D and the source electrode S, that is, it is formed by patterning the same material layer. That is to say, the material of the upper part P2 is the same as that of the drain D and the source S. For example, in an embodiment where the materials of the drain D and the source S include metal materials, the upper part P2 also includes metal materials. Since there is no need to additionally attach a light-collimating film layer (not shown) to the display device 10 , the display device 10 has the advantages of thinner and thinner and better fingerprint resolution at the same time. The lower portion P1 of each extension portion 104A contacts the substrate SUB, and the combination of the upper portion P2 and the lower portion P1 of each extension portion 104A has an aspect ratio of 0.1-6.

FIG. 6B is a schematic cross-sectional view of a sensing element substrate 100c according to another embodiment of the disclosure. The main difference between the sensing element substrate 100c of this embodiment and the sensing element substrate 100b shown in FIG. 6A is that the lower portion P1 of each extension portion 104A extends to the through hole H2 of the insulating layer 108 and contacts the top surface of the buffer layer 106 .

FIG. 7A is a schematic cross-sectional view of a sensing element substrate 100d according to another embodiment of the disclosure. The main difference between the sensing element substrate 100d of this embodiment and the sensing element substrate 100 in FIG. 3B is that the light collimation structure 104 and the gate G belong to the same film layer, that is, they are patterned from the same material layer. That is to say, the material of the light collimating structure 104 and the material of the gate G are the same. For example, in an embodiment where the material of the gate G includes a metal material, the light collimating structure 104 also includes a metal material. Since there is no need to additionally attach a light-collimating film layer (not shown) to the display device 10 , the display device 10 has the advantages of thinner and thinner and better fingerprint resolution at the same time. In this embodiment, the light collimating structure 104 extends to the through hole H2 of the insulating layer 108 and contacts the top surface of the buffer layer 106 .

FIG. 7B is a schematic cross-sectional view of a sensing element substrate 100e according to another embodiment of the disclosure. The main difference between the sensing element substrate 100 e of the present embodiment and the sensing element substrate 100 d of FIG. 7A is that the light collimation structure 104 extends in the through hole H3 in the buffer layer 106 and contacts the substrate SUB.

To sum up, in the sensing element substrate of the embodiment of the present disclosure, by disposing a light collimating structure between the substrate and the photosensitive unit, the light reflected by the peaks and troughs of the fingerprint can travel toward the photosensitive unit more smoothly. collimation, and the gate or drain and at least a part of the light collimation structure belong to the same film layer, the material of the gate or drain is the same as that of at least a part of the light collimation structure, because no additional light is required The collimation film is layered on the display device, so the display device can have the advantages of thinner and thinner and better fingerprint resolution at the same time. The orthographic projection of the light collimating structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, so as not to affect the aperture ratio or viewing angle of the pixel array substrate.

Of course, the present invention can also have other various embodiments, and those skilled in the art can make various corresponding changes and deformations according to the present invention without departing from the spirit and essence of the present invention. All changes and deformations should belong to the protection scope of the appended claims of the present invention.

Claims (11)

1. A sensing element substrate, comprising:

a substrate;

an active device on the substrate, wherein the active device comprises a drain electrode;

the photosensitive unit is positioned on the substrate and is electrically connected with the active element; and

the light collimation structure is positioned between the substrate and the photosensitive unit, wherein the orthographic projection of the light collimation structure on the substrate falls in the orthographic projection of the photosensitive unit on the substrate, the drain electrode and the light collimation structure belong to the same film layer, and the material of the drain electrode is the same as that of the light collimation structure.

2. The sensing device substrate of claim 1, further comprising:

the light collimation structure comprises a substrate, a photosensitive unit, an interlayer dielectric layer, a plurality of light collimation layers and a light absorption layer, wherein the interlayer dielectric layer is positioned between the substrate and the photosensitive unit and is provided with a plurality of through holes, each extending part is positioned in each through hole of the interlayer dielectric layer, the extending direction of each extending part is substantially parallel to a normal direction of the substrate, and the distance between the extending parts is 2 micrometers to 10 micrometers.

3. The sensing device substrate of claim 2, further comprising:

and the control line is positioned on the substrate and is electrically connected with the active element, wherein the extension parts are substantially perpendicular to the control line.

4. The sensor device substrate of claim 2, wherein each of the extensions has an aspect ratio of 0.1 to 6.

5. The sensing device substrate of claim 2, wherein the extensions further comprise:

a plurality of first sub-extensions; and

the second sub-extension parts and the first sub-extension parts are arranged in a staggered mode, so that the second sub-extension parts and the first sub-extension parts form a net pattern, the number of the first sub-extension parts is more than 2, and the number of the second sub-extension parts is more than 2.

6. The sensing device substrate of claim 5, further comprising:

and the control line is positioned on the substrate and is electrically connected with the active element, wherein the extending directions of the second sub-extending parts are staggered with the control line.

7. The sensing device substrate of claim 5, further comprising:

and a control line on the substrate and electrically connected to the active device, wherein the second sub-extensions are substantially parallel to the control line.

8. A sensing element substrate, comprising:

a substrate;

an active device on the substrate, wherein the active device comprises a gate and a drain;

the photosensitive unit is positioned on the substrate and is electrically connected with the active element; and

the light collimation structure is positioned between the substrate and the photosensitive unit, wherein the orthographic projection of the light collimation structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, the light collimation structure comprises a plurality of extending parts, the extending directions of the extending parts are substantially parallel to a normal direction of the substrate, each extending part is provided with a lower part and an upper part which are connected, the lower part and the grid electrode belong to the same film layer, the lower part and the grid electrode are made of the same material, the upper part and the drain electrode belong to the same film layer, and the upper part and the drain electrode are made of the same material.

9. The sensor device substrate of claim 8, wherein the lower portion of each of the extensions contacts the substrate and the aspect ratio of each of the extensions is 0.1 to 6.

10. The sensing device substrate of claim 8, further comprising:

and an interlayer dielectric layer between the substrate and the photosensitive unit and having a plurality of through holes, wherein the light collimating structure further comprises a plurality of islands above the upper parts of the extending parts, the upper part and the lower part of each extending part are located in the through holes of the interlayer dielectric layer, and the islands are located outside the through holes.

11. A sensing element substrate, comprising:

a substrate;

an active device on the substrate, wherein the active device comprises a gate and a drain;

the photosensitive unit is positioned on the substrate and is electrically connected with the active element; and

the light collimation structure is positioned between the substrate and the photosensitive unit, wherein the orthographic projection of the light collimation structure on the substrate falls within the orthographic projection of the photosensitive unit on the substrate, the grid electrode and the light collimation structure belong to the same film layer, and the material of the grid electrode is the same as that of the light collimation structure.

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