CN112420473A - Epitaxial equipment and temperature measuring device thereof - Google Patents
Epitaxial equipment and temperature measuring device thereof Download PDFInfo
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- CN112420473A CN112420473A CN202011155006.8A CN202011155006A CN112420473A CN 112420473 A CN112420473 A CN 112420473A CN 202011155006 A CN202011155006 A CN 202011155006A CN 112420473 A CN112420473 A CN 112420473A
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- 238000009529 body temperature measurement Methods 0.000 claims abstract description 118
- 238000000034 method Methods 0.000 claims abstract description 78
- 230000008569 process Effects 0.000 claims abstract description 77
- 230000005855 radiation Effects 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims description 34
- 238000012360 testing method Methods 0.000 claims description 6
- 238000000407 epitaxy Methods 0.000 claims description 2
- 238000004861 thermometry Methods 0.000 claims 1
- 238000009434 installation Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
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- 238000005259 measurement Methods 0.000 description 3
- 238000005070 sampling Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
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- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/0003—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter
- G01J5/0007—Radiation pyrometry, e.g. infrared or optical thermometry for sensing the radiant heat transfer of samples, e.g. emittance meter of wafers or semiconductor substrates, e.g. using Rapid Thermal Processing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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Abstract
The invention discloses an epitaxial device and a temperature measuring device thereof, which are used for measuring the temperature of a measured object positioned in a process chamber, wherein a temperature measuring window is arranged on one side of the process chamber facing the temperature measuring device, and the temperature measuring device comprises: the infrared temperature measuring part is fixedly arranged outside the process cavity and is arranged along the axial direction of the temperature measuring window, and the projection of the infrared temperature measuring part is positioned outside the temperature measuring window; the reflecting part is rotatably installed outside the process chamber and can rotate to radiate the measured object and penetrate through the infrared radiation energy of the temperature measurement window to the infrared temperature measurement part. Above-mentioned technical scheme can solve present temperature measuring equipment and pass through the installation of electronic slide rail, and among the temperature measurement process, need make temperature measuring equipment be located the base top, lead to temperature measuring equipment to be in the high temperature state for a long time, cause the problem that temperature measuring equipment's life seriously descends.
Description
Technical Field
The invention relates to the technical field of semiconductor processing, in particular to epitaxial equipment and a temperature measuring device thereof.
Background
In the semiconductor processing process, an epitaxial process is generally performed at a high temperature, and in order to improve the epitaxial efficiency, a plurality of silicon wafers are generally subjected to the epitaxial process simultaneously by means of a plurality of pieces of epitaxial equipment. In order to heat a plurality of silicon wafers, a plurality of silicon wafers are generally placed on a susceptor in a surrounding manner, and a plurality of heating coils are disposed under the susceptor, and the susceptor is kept rotated during the epitaxy. In order to ensure that the temperatures of the plurality of silicon wafers are the same, the temperature field distribution of the heating coils is usually required to be measured, and because the susceptor usually keeps rotating in the epitaxial process, the temperature measurement is generally carried out only by selecting a plurality of point positions in the radius direction of the heating coils so as to correspondingly adjust the heating parameters of the plurality of heating coils, so that the temperatures of the plurality of heated silicon wafers are basically equal.
At present, generally, set up temperature measuring equipment above the base, and drive temperature measuring equipment with the help of moving mechanism such as electronic slide rail and remove in the top of base to measure the temperature of a plurality of different positions departments on the base in the radius direction, because the temperature of base is higher usually, because temperature measuring equipment need remove to the base top to measure the temperature of base, lead to temperature measuring equipment to be in the high temperature state for a long time, cause temperature measuring equipment's life to seriously descend.
Disclosure of Invention
The invention discloses epitaxial equipment and a temperature measuring device thereof, which are used for solving the problem that the service life of the temperature measuring equipment is seriously reduced because the temperature measuring equipment is in a high-temperature state for a long time in the temperature measuring process because the temperature measuring equipment is required to be positioned above a base when the conventional temperature measuring equipment is installed through an electric slide rail.
In order to solve the problems, the invention adopts the following technical scheme:
in a first aspect, the present invention discloses a temperature measuring device for measuring a temperature of a measured object located in a process chamber, wherein a temperature measuring window is arranged on one side of the process chamber facing the temperature measuring device, and the temperature measuring device comprises:
the infrared temperature measuring part is fixedly arranged outside the process cavity and is arranged along the axial direction of the temperature measuring window, and the projection of the infrared temperature measuring part is positioned outside the temperature measuring window;
the reflecting part is rotatably installed outside the process chamber and can rotate to radiate the measured object and penetrate through the infrared radiation energy of the temperature measurement window to the infrared temperature measurement part.
In a second aspect, the invention also discloses epitaxial equipment, which comprises a process cavity, a bearing base and the temperature measuring device, wherein the process cavity is provided with a temperature measuring window, the bearing base is arranged in the process cavity, the infrared temperature measuring part is fixedly arranged outside the process cavity and is positioned outside the temperature measuring window along the axial direction of the temperature measuring window, and the projection of the infrared temperature measuring part is positioned outside the temperature measuring window; the reflecting part is rotatably arranged outside the process chamber, and the reflecting part can rotate so as to radiate the bearing base and reflect infrared radiation energy which penetrates through the temperature measuring window to the infrared temperature measuring part.
The technical scheme adopted by the invention can achieve the following beneficial effects:
the embodiment of the invention discloses a temperature measuring device which can measure the temperature of a measured object in a process chamber. One side of the process cavity facing the temperature measuring device is provided with the temperature measuring window, so that infrared radiation energy radiated by a measured object in the process cavity can be radiated to the temperature measuring device through the temperature measuring window, and the temperature measuring device can measure the temperature of the measured object.
Wherein, temperature measuring device includes infrared temperature measurement portion and reflection part, and infrared temperature measurement portion fixes outside the process cavity, and the reflection part is rotating to be installed outside the process cavity, and the reflection part can reflect infrared radiant energy to through making the reflection part rotate, guarantee under infrared temperature measurement portion keeps fixed condition, the infrared radiant energy that different positions department radiated out on the testee also homoenergetic radiates to infrared temperature measurement portion in, thereby measure the temperature of different positions department on the testee with the help of infrared temperature measurement portion.
In addition, because the projection of the infrared temperature measurement part is positioned outside the temperature measurement window along the axial direction of the temperature measurement window, in the temperature measurement process, heat in the process chamber cannot be directly radiated onto the infrared temperature measurement part through the temperature measurement window, so that the temperature of the infrared temperature measurement part is always lower, and the service life is longer.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the invention and not to limit the invention. In the drawings:
FIG. 1 is an assembled view of a temperature measuring device according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a temperature measuring device according to an embodiment of the present invention.
Description of reference numerals:
110-a first frame body, 120-a second frame body, 200-a rotating part, 310-an infrared temperature measuring part, 320-a reflecting part, 400-a position potentiometer, 500-a temperature display part, 600-a process chamber, 700-a measured object and 800-a frame.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the technical solutions of the present invention will be clearly and completely described below with reference to the specific embodiments of the present invention and the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The technical solutions disclosed in the embodiments of the present invention are described in detail below with reference to the accompanying drawings.
As shown in fig. 1 and 2, an embodiment of the present invention discloses a temperature measuring apparatus that can measure the temperature of an object 700 to be measured in a process chamber 600. One side of the process chamber 600 facing the temperature measuring device is provided with a temperature measuring window, so that it is ensured that infrared radiation energy radiated by the object 700 to be measured in the process chamber 600 can be radiated to the temperature measuring device through the temperature measuring window, and the temperature measuring device can measure the temperature of the object 700 to be measured. In addition, the object 700 to be measured may be a bearing base, which may be a circular structure, and the bearing base is usually provided with a plurality of annularly distributed slots, in which wafers to be processed may be placed. The lower part of the bearing base can be provided with a heating device, and the heating device can provide heating action for the bearing base under the condition of electrifying.
The temperature measuring device includes an infrared temperature measuring part 310 and a reflecting part 320. The infrared temperature measuring unit 310 may be an infrared temperature measuring device, and the purpose of measuring the temperature is achieved by receiving the infrared radiation energy radiated from the object 700. The infrared temperature measuring part 310 is fixedly installed outside the process chamber 600, and optionally, the infrared temperature measuring part 310 may be fixed outside the process chamber 600 by clamping, inserting, or connecting with a bolt connector. More specifically, the infrared temperature measurement unit 310 may be fixed to the process chamber 600 or may be fixed to a frame of the epitaxial apparatus. In addition, along the axial direction of the temperature measurement window, the projection of the infrared temperature measurement portion 310 is located outside the temperature measurement window, that is, the infrared temperature measurement portion 310 and the temperature measurement window are arranged in a staggered manner along the axial direction of the temperature measurement window.
The reflecting portion 320 may be a plane mirror, which ensures that the error of the temperature measured by the infrared temperature measuring portion 310 is relatively small. The reflection part 320 may be rotatably installed outside the process chamber 600 by a member having a rotation capability so that the object to be measured is radiated and the infrared radiation energy passing through the temperature measurement window can be reflected to the infrared temperature measurement part 310 in a case where the reflection part 320 rotates.
For example, the reflection part 320 may be installed outside the process chamber 600 through the rotation part 200, the rotation part 200 may be specifically a driving part such as a motor or an air cylinder so that the rotation part 200 can rotate with respect to the mounting frame, and the rotation part 200 may be installed on the process chamber 600 or a rack of the epitaxial apparatus through a bolt connection or the like. The reflection part 320 can be fixed on the rotation part 200 by bonding or clamping, and the temperature measurement head of the infrared temperature measurement part 310 faces the reflection part 320, so that infrared radiation energy generated at different positions on the object 700 to be measured can be reflected into the infrared temperature measurement part 310 in the process that the reflection part 320 rotates along with the rotation part 200, and temperature measurement can be performed.
In addition, the rotation direction of the rotating part 200 may be determined according to the relative position between the rotating part 200 and the temperature measuring window, but it is required to ensure that within the rotation range of the rotating part 200, the energy radiated from a plurality of different positions on the straight line extending outward from the center of the measured object 700 in the process chamber 600 can pass through the temperature measuring window and be radiated to the position of the rotating part 200, so as to ensure that the reflecting part 320 installed on the rotating part 200 can receive the infrared radiation energy and reflect the infrared radiation energy to the infrared temperature measuring part 310, so as to measure the temperature at a plurality of positions on the measured object 700.
With the above technical solution, the reflecting portion 320 with relatively small weight can be installed on the rotating portion 200, so as to reduce power consumption of the rotating portion 200 during rotation, improve flexibility of rotation of the rotating portion 200, and improve response speed of the rotating portion 200.
The utility model discloses a temperature measuring device includes infrared temperature measurement portion 310 and reflection part 320, infrared temperature measurement portion 310 is fixed outside process chamber 600, reflection part 320 is rotating and is installed outside process chamber 600, reflection part 320 can reflect infrared radiant energy, thereby through making reflection part 320 rotate, guarantee to keep under the fixed condition at infrared temperature measurement portion 310, the infrared radiant energy that different positions department radiated on the testee also homoenergetic radiates to in the infrared temperature measurement portion 310, thereby measure the temperature of different positions department on the testee with the help of infrared temperature measurement portion 310.
In addition, because the projection of the infrared temperature measurement part 310 is located outside the temperature measurement window along the axial direction of the temperature measurement window, in the temperature measurement process, the heat in the process chamber 600 cannot be directly radiated onto the infrared temperature measurement part 310 through the temperature measurement window, so that the temperature of the infrared temperature measurement part 310 can be ensured to be lower all the time, and the service life is longer.
In the process of measuring the temperatures of a plurality of different positions on the object 700 to be measured by using the temperature measuring device, the rotation of the rotating part 200 can be manually controlled, so that the temperatures of a plurality of preset positions on the object 700 to be measured can be measured. More specifically, as shown in fig. 2, in the process of measuring the measured object, a plurality of preset positions on a straight line extending outward from the center of the measured object may be taken as temperature measuring points, and the plurality of preset positions are distributed uniformly and at intervals, which may ensure that the temperature sampling has better representativeness, and the number of the temperature sampling points may be determined according to actual situations. Alternatively, as shown in fig. 2, eleven temperature measurement points a1, a2, a3 to a11 are taken as temperature measurement points on the object to be measured, wherein a1 is located at the edge of the object to be measured, a11 is located at the center p of the object to be measured, and the eleven temperature measurement points are distributed at intervals along a straight line, and by rotating the reflection part 320 to different positions, for example, in the measurement of a1, the reflection part 320 can be rotated to the test position B1, at this time, the infrared radiation energy at a1 can be propagated to the reflection part 320 along the straight line a, the angular bisector is small with the straight line C as an angle, and the infrared radiation energy is incident into the infrared temperature measurement part 310 along the straight line B, so that the temperature measurement of a1 point is. Accordingly, when measuring a11, the reflection unit 320 can be rotated to the test position b11, which ensures that the infrared radiation energy radiated from each temperature measurement point can be reflected by the reflection unit 320 and then incident on the infrared temperature measurement unit 310 to measure the temperature of each temperature measurement point.
In addition, in the case that the object 700 to be measured is a susceptor in an epitaxial device, since a plurality of silicon wafers are generally disposed between the center and the edge of the susceptor around the center of the susceptor, when measuring the temperature of the susceptor, in order to improve the temperature measurement efficiency, the temperature measurement may be performed only at a plurality of positions in the region covered by the silicon wafers without performing the temperature measurement at the center of the susceptor. Of course, in order to further improve the uniformity of heating the silicon wafer, more temperature measurement points on a straight line extending from the center of the susceptor outwards can be measured one by one.
Further, a connecting line between the center O of the reflection portion 320 and the center P of the object 700 to be measured may be perpendicular to the surface of the object 700 to be measured, and in this case, it may be ensured that the infrared energy radiated from more points on the straight line extending outward from the center of the object 700 to be measured may be reliably incident from the reflection portion 320 to the infrared temperature measurement portion 310, so as to expand the temperature measurement range of the temperature measurement device on the object to be measured.
In the case that the reflection portion 320 is arranged in the above manner, in order to reduce the loss of the infrared radiation energy in the transmission process, the infrared temperature measurement portion 310 may be located between the reflection portion 320 and the object to be measured 700, that is, in the axial direction of the temperature measurement window, the infrared temperature measurement portion 310 is sandwiched between the reflection portion 320 and the object to be measured 700, and a connection line between the center of the infrared temperature measurement portion 310 and the center of the object to be measured 700 is also perpendicular to the surface of the object to be measured 700. As described above, when measuring the temperature of the object 700, it is usually not necessary to measure the temperature of the central region of the object 700, so the size of the temperature measurement window can be reduced properly, and the temperature measurement device, especially the side wall of the process chamber 600 can be still spaced between the infrared temperature measurement part 310 and the object 700, and further, by adopting the above technical solution, the moving distance of the infrared energy radiated from the object 700 can be reduced as much as possible, and the heat of the object 700 to be measured can be blocked from being radiated to the infrared temperature measurement part 310 and the reflection part 320 by the side wall of the process chamber 600, thereby ensuring that the service life of the infrared temperature measurement part 310 is still relatively long.
Optionally, infrared temperature measurement portion 310 and reflection part 320 are all installed outside process chamber 600 through the mounting bracket, and the mounting bracket can adopt hard materials such as metal to make to guarantee that the mounting bracket can provide stable supporting role for infrared temperature measurement portion 310 and reflection part 320, guarantee to keep the relatively fixed relation steadily between temperature measurement in-process infrared temperature measurement portion 310 and the process chamber 600, promote the accuracy of temperature measurement result. The mounting bracket may be secured to the process chamber 600 by screws or welding, or the mounting bracket may be secured to the frame 800 of the process tool.
Optionally, the mounting frame includes a first frame body 110 and a second frame body 120, and both the first frame body 110 and the second frame body 120 are fixed relative to the process chamber 600. As described above, the rotating portion 200 may provide a rotating function for the reflecting portion 320, and further, the reflecting portion 320 may be mounted on the first frame 110 through the rotating portion 200, and the infrared temperature measuring portion 310 is fixedly mounted on the second frame 120. Specifically, the first frame body 110 and the second frame body 120 may be made of a metal material, and both may be fixed to the process chamber 600 or the frame 800 of the epitaxial apparatus by means of a threaded connection or welding, and the shape and size of the first frame body 110 and the second frame body 120 are not limited herein.
As described above, the reflection part 320 may be rotatably installed outside the process chamber 600 through the rotation part 200, and optionally, the temperature measuring apparatus disclosed in the embodiment of the present application may further include a position potentiometer 400, and the position potentiometer 400 is matched with the rotation part 200 to obtain the rotation angle of the rotation part 200 through the position potentiometer 400. In this case, the temperature value measured by the temperature measuring device can be determined more accurately as the temperature of the position on the measured object 700, so as to further improve the accuracy of the obtained temperature sampling result. More specifically, the position potentiometer 400 and the infrared temperature measuring part 310 may be connected to an upper computer, so that the rotation angle measured by the position potentiometer 400 and the temperature measured by the infrared temperature measuring part 310 may be transmitted to the upper computer together to record the temperatures of different positions on the object 700 to be measured, and the measured temperatures are analyzed to correspondingly change the heating condition of the heating device, thereby ensuring that the temperatures of the areas on the object 700 to be measured for providing the heating function are close to each other.
Optionally, the temperature measuring device disclosed in the embodiment of the present application may further include a temperature display portion 500, the temperature display portion 500 is matched with the infrared temperature measuring portion 310 to display temperature data measured by the infrared temperature measuring portion 310, so that a worker may be more clearly aware of the temperature data on the corresponding position on the measured object, and the heating condition of the heating device may be adjusted according to the measured temperature data, thereby improving the convenience of adjustment. Specifically, the temperature display part 500 may be a liquid crystal display, and the temperature display part 500 and the infrared temperature measurement part 310 may be connected to each other by a wire, so that the infrared temperature measurement part 310 may directly display the measured temperature data on the temperature display part 500. Of course, as mentioned above, the infrared temperature measuring unit 310 may also be directly connected to the upper computer, so as to directly transmit the temperature data to the upper computer, and correspondingly adjust the heating condition of the heating device by means of the upper computer.
As described above, the infrared temperature measuring part 310 may be an infrared thermometer, and optionally, the infrared temperature measuring part 310 is a two-color infrared thermometer, the two-color infrared thermometer determines the temperature by the ratio of the infrared radiation energies of the two bands of the adjacent channel, the measurement result does not change with the state change of the surface of the object 700 to be measured, and the accuracy of temperature measurement is relatively high. In the process of measuring the temperature of the object 700 to be measured by using the temperature measuring device, even if the infrared radiation energy of the object 700 to be measured generates a certain loss in the transmission process, the infrared temperature measuring part 310 can obtain a more accurate temperature measurement result.
Based on the temperature measuring device disclosed in any of the above embodiments, the embodiment of the present application further discloses an epitaxial apparatus, which includes a process chamber 600, a bearing base and any of the above temperature measuring devices.
Wherein, process chamber 600 is provided with a temperature measurement window, specifically, the shape and the volume of process chamber 600 can be determined according to actual needs, optionally, process chamber 600 is a cylindrical structural member. The temperature measurement window may be a half of the shape of the object 700 to be measured, for example, the object 700 to be measured is a circular structural member, and the temperature measurement window may be a semicircular structural member, in which case, it may be ensured that the temperature measurement device may measure the temperatures of a plurality of positions on the line extending outward from the center of the object 700 to be measured, so as to obtain more comprehensive temperature information on the bearing base.
Infrared temperature measurement portion 310 fixed mounting is outside process chamber 600, and along the axial of temperature measurement window, and the projection of infrared temperature measurement portion 310 is located outside the temperature measurement window, prevents to bear the heat radiation of base to infrared temperature measurement portion 310 on, guarantees that the temperature of infrared temperature measurement portion 310 is in lower level all the time, promotes the life of infrared temperature measurement portion 310. The reflecting part 320 rotates and is installed outside the process chamber 600, and the reflecting part 320 rotates, so that the bearing base can radiate, the infrared radiation energy penetrating through the temperature measuring window is reflected to the infrared temperature measuring part 310, and the infrared temperature measuring part 310 is ensured to be capable of measuring the temperature of a plurality of positions on the bearing base.
As described above, the temperature measuring device can be disposed on a side of the temperature measuring window away from the susceptor, i.e., the temperature measuring device can be disposed above the process chamber 600. In the case that the temperature measurement window extends from the edge of the process chamber 600 to the center of the process chamber 600, the reflection part 320 may be located right above the center of the process chamber 600, and the infrared temperature measurement part 310 may be located at one side of the temperature measurement window, so as to ensure that the projection of the infrared temperature measurement part is located outside the position measurement window in the axial direction of the temperature measurement window.
Further, the temperature measurement window can be the bar structure spare, and the temperature measurement window extends along the direction at the outside directional straight line place in the center from bearing the base, under this condition, can greatly reduce the area of temperature measurement window to further reduce the infrared energy that bears the base and pass through the outside radiation of temperature measurement window, can reduce the calorific loss who bears the base greatly on the one hand, on the other hand, can promote the whole homogeneity of bearing the temperature on the base as far as possible. For example, in the case that the bearing base is a circular structural member, the temperature measurement window may extend along the radial direction of the bearing base; in the case of a rectangular or similar structure of the carrier base, the temperature measurement window may extend along any straight line passing through the center of the rectangle.
In addition, the temperature measuring window can be positioned at one side of the center of the bearing base, namely, in the extending direction of the temperature measuring window, the size of the temperature measuring window is less than or equal to half of the size of the bearing base in the corresponding direction. For example, the bearing base is of a circular structure, and the size of the temperature measurement window in the extending direction of the temperature measurement window can be equal to or smaller than the radius of the bearing base. Under the condition, the temperature condition in a larger range on the bearing base can be obtained, the size of the temperature measuring window can be ensured to be relatively small, the heat loss of the bearing base is reduced as much as possible, and the temperature at any position on the bearing base is ensured to be basically equal.
As described above, when the carrying base is used to carry the wafer, the plurality of wafers are all arranged around the center of the carrying base, and therefore, when the temperature of the carrying base is measured, the distance between the center of the carrying base and the region where the wafer is located is relatively large, so that the temperature at the center of the carrying base is not measured, and in this case, the size of the temperature measurement window can be further reduced, that is, the size of the temperature measurement window is smaller than half of the size of the carrying base in the corresponding direction, and the temperature measurement window and the center of the carrying base are arranged at intervals along the extending direction of the temperature measurement window, so that the center of the carrying base can be shielded by the cavity wall of the process chamber 600. Under this condition, can make infrared temperature measurement portion 310 and reflection part 320 all set up directly over bearing the weight of the base, and make infrared temperature measurement portion 310 be located between reflection part 320 and the bearing the weight of the base, this can guarantee that infrared temperature measurement portion 310 is outside the temperature measurement window in the ascending projection of the axial of temperature measurement window, and can make temperature measuring device can carry out temperature measurement work to the great region of bearing the weight of the base upper reaches, can also reduce the propagation distance of infrared radiant energy, energy loss is reduced, promote the temperature measurement precision.
As described above, the load-bearing base may be heated by a heating device, the heating device may specifically be an electrostatic chuck, optionally, the heating device is a heating coil, the number of the heating coils is multiple, and the heating coils are all circular structural members, the centers of the heating coils are overlapped and are all disposed in the process chamber 600, the heating coils may provide a heating function for the load-bearing base, and in the case that the load-bearing base rotates, the heating coils disposed by adopting the above arrangement may make the temperatures at the positions corresponding to the heating coils on the object under test 700 equal as much as possible. Of course, in the process of arranging the bearing base on the heating coil, the center of the bearing base needs to be overlapped with the center of the heating coil.
In the above embodiments of the present invention, the difference between the embodiments is mainly described, and different optimization features between the embodiments can be combined to form a better embodiment as long as they are not contradictory, and further description is omitted here in view of brevity of the text.
The above description is only an example of the present invention, and is not intended to limit the present invention. Various modifications and alterations to this invention will become apparent to those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention should be included in the scope of the claims of the present invention.
Claims (10)
1. The utility model provides a temperature measuring device for the temperature of the testee (700) that is located technology cavity (600) is measured, technology cavity (600) orientation one side of temperature measuring device is equipped with the temperature measurement window, its characterized in that, temperature measuring device includes:
the infrared temperature measuring part (310) is fixedly arranged outside the process chamber (600), and the projection of the infrared temperature measuring part (310) is positioned outside the temperature measuring window along the axial direction of the temperature measuring window;
reflection part (320), reflection part (320) rotate install in outside process chamber (600), reflection part (320) are rotatable, in order to with testee (700) radiation, and pass the infrared radiation energy reflection of temperature measurement window extremely infrared temperature measurement portion (310).
2. The thermometric apparatus of claim 1, wherein a line connecting the center of the reflecting section (320) and the center of the object under test (700) is perpendicular to the surface of the object under test (700), and the infrared thermometric section (310) is located between the reflecting section (320) and the object under test (700).
3. The temperature measuring device according to claim 1, wherein the temperature measuring device comprises a first frame body (110) and a second frame body (120), the first frame body (110) and the second frame body (120) are both fixed relative to the process chamber (600), the reflection part (320) is rotatably mounted on the first frame body (110), and the infrared temperature measuring part (310) is fixedly mounted on the second frame body (120).
4. The temperature measuring device according to claim 1, wherein the reflecting portion (320) is rotatably installed outside the process chamber (600) by a rotating portion (200), and the temperature measuring device further comprises a position potentiometer (400), and the position potentiometer (400) is engaged with the rotating portion (200) to obtain a rotation angle of the rotating portion (200).
5. The thermometric apparatus of claim 1, further comprising a temperature display (500), said temperature display (500) cooperating with said infrared thermometry (310).
6. The temperature measuring device according to claim 1, wherein the infrared temperature measuring part (310) is a two-color infrared thermometer.
7. An epitaxial device, comprising a process chamber (600), a carrying base and the temperature measuring apparatus of any one of claims 1 to 6, wherein the process chamber (600) is provided with a temperature measuring window, the carrying base is arranged in the process chamber (600), the infrared temperature measuring part (310) is fixedly arranged outside the process chamber (600) and along the axial direction of the temperature measuring window, and the projection of the infrared temperature measuring part (310) is positioned outside the temperature measuring window; the reflecting part (320) is rotatably arranged outside the process chamber (600), the reflecting part (320) can rotate so as to radiate the bearing base, and the infrared radiation energy passing through the temperature measuring window is reflected to the infrared temperature measuring part (310).
8. Epitaxy apparatus according to claim 7, wherein the temperature measurement window is a strip-shaped structure and extends in the direction of a line pointing outwards from the centre of the carrier base.
9. Epitaxial apparatus according to claim 8, wherein the temperature measurement window is located at one side of the center of the carrying base, and the temperature measurement window and the center of the carrying base are arranged at a distance along the extending direction of the temperature measurement window.
10. The epitaxial device according to claim 7, further comprising a plurality of heating coils, wherein the heating coils are all circular ring-shaped structural members, the centers of the plurality of heating coils are coincident and are all arranged in the process chamber (600), and the heating coils are used for heating the bearing base.
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