CN112305689A - Coupling structure of laser and silicon optical chip based on metalens - Google Patents
Coupling structure of laser and silicon optical chip based on metalens Download PDFInfo
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- CN112305689A CN112305689A CN202011201584.0A CN202011201584A CN112305689A CN 112305689 A CN112305689 A CN 112305689A CN 202011201584 A CN202011201584 A CN 202011201584A CN 112305689 A CN112305689 A CN 112305689A
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- 239000010703 silicon Substances 0.000 title claims abstract description 61
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 61
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 230000008878 coupling Effects 0.000 title claims abstract description 51
- 238000010168 coupling process Methods 0.000 title claims abstract description 51
- 238000005859 coupling reaction Methods 0.000 title claims abstract description 51
- 230000003287 optical effect Effects 0.000 title claims abstract description 44
- 239000002086 nanomaterial Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims description 5
- 238000005530 etching Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 230000010354 integration Effects 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002061 nanopillar Substances 0.000 description 5
- 230000005693 optoelectronics Effects 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 239000012792 core layer Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000010023 transfer printing Methods 0.000 description 1
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4207—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback
- G02B6/4208—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms with optical elements reducing the sensitivity to optical feedback using non-reciprocal elements or birefringent plates, i.e. quasi-isolators
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
Abstract
一种基于超透镜的激光器和硅光芯片耦合结构，其特点在于：包括激光器、隔离器和硅光芯片，所述的隔离器的两侧表面分别集成准直超透镜和耦合超透镜，所述的准直超透镜、所述耦合超透镜和所述隔离器共光轴，沿所述的激光器的激光输出方向依次是所述的准直超透镜、隔离器、耦合超透镜和硅光芯片。本发明与传统分立透镜和隔离器相比具有更加紧凑，超透镜可以根据激光和硅光波导模斑尺寸定制设计，耦合效率更高。超透镜和隔离器集成在一起，通过光刻对准，大幅简化了激光器和硅光芯片的耦合难度。
A superlens-based laser and silicon optical chip coupling structure, which is characterized in that it includes a laser, an isolator and a silicon optical chip, and the two sides of the isolator are respectively integrated with a collimating superlens and a coupling superlens, and the The collimating super-lens, the coupling super-lens and the isolator share the same optical axis, and along the laser output direction of the laser are the collimating super-lenses, isolators, coupling super-lenses and silicon optical chips in sequence. Compared with the traditional discrete lens and isolator, the present invention is more compact, and the superlens can be customized and designed according to the size of the laser and silicon optical waveguide mode spots, and the coupling efficiency is higher. The metalens and isolators are integrated and aligned by photolithography, which greatly simplifies the coupling of the laser and the silicon photonic chip.
Description
Technical Field
The invention relates to the field of integrated optics of optical communication, in particular to a laser and silicon optical chip coupling structure based on a super lens.
Background
In recent years, silicon-based optoelectronic technologies have been rapidly developed. The silicon waveguide has a stronger constraint effect on light because the core layer and the cladding layer have higher refractive index contrast, so that the silicon-based optical waveguide device has smaller size and higher integration level. The manufacturing and processing technology of the silicon-based optoelectronic device is compatible with CMOS, and low-cost large-scale production is easy to realize. Currently, silicon-based optoelectronic chips are used in coherent optical communication, optical sensing, laser radar, microwave photonics, and other fields, for example, silicon-based optical transceiver chips have been developed in mass production in optical communication and optical interconnection fields.
Integrated light sources are a research hotspot in the field of silicon-based optoelectronics in recent years. Silicon is an indirect bandgap material, and electrons and holes recombine to produce no photons. Currently, silicon-based light sources implemented in the industry are mainly integrated using relatively mature III-V materials and silicon photonics chips. From the specific implementation point of view, there are three types of monolithic integration in which III-V materials are epitaxially grown directly on a silicon material, heterogeneous integration using wafer bonding or transfer printing techniques, and hybrid integration based on spatial optical coupling or end-face butt coupling. The light source is manufactured by epitaxially growing III-V semiconductor materials on the silicon-based chip, the scheme has the problem of lattice mismatch, and the reliability of the light source needs to be improved. Although the problem of lattice mismatch between two materials is solved by wafer bonding, the requirement on a bonding process is high, and the yield of heterogeneous integrated devices needs to be improved. In the hybrid integration scheme, light emitted by the III-V chip is coupled into the silicon optical chip through components such as a lens and an isolator, and the two chips can be independently optimized in such a way, so that excellent laser performance can be obtained. The laser chip is adopted to flip evanescent wave coupling, so high-precision alignment equipment is needed, and the requirements on equipment and process are strict.
Disclosure of Invention
The invention provides a laser and silicon optical chip coupling structure based on a super lens, which has the characteristics of high coupling efficiency and more compact overall structure.
The technical solution of the invention is as follows:
a laser and silicon optical chip coupling structure based on super lens is characterized in that: the laser comprises a laser, an isolator and a silicon optical chip, wherein the surfaces of two sides of the isolator are respectively integrated with a collimating super lens and a coupling super lens, the collimating super lens, the coupling super lens and the isolator share an optical axis, and the laser output direction of the laser is sequentially the collimating super lens, the isolator, the coupling super lens and the silicon optical chip.
The collimating super lens and the coupling super lens are sub-wavelength structures directly formed on the surfaces of the two sides of the isolator through silicon deposition and silicon etching processes.
The micro-nano structures of the collimating super lens and the coupling super lens are respectively matched with the numerical apertures of the laser waveguide and the silicon optical waveguide so as to maximize the coupling efficiency of the laser and the silicon optical waveguide.
The beneficial technical effects of the invention are as follows:
1) the coupling of the laser and the silicon optical chip can be realized, and the superlens is directly manufactured on the surface of the isolator, so that the size of the integral coupling structure is greatly reduced;
2) the super lens can be designed in a customized manner according to the mode spots and the numerical apertures of the laser waveguide and the silicon optical waveguide, and the coupling efficiency is high;
3) the super lens and the isolator are aligned through the photoetching equipment, so that the alignment precision is high, and the error is small.
Drawings
FIG. 1 is a general schematic diagram of a superlens based laser and silicon optical chip coupling structure according to the present invention;
FIG. 2a is a conceptual diagram of a superlens structure of the present invention, FIG. 2b is a schematic diagram of a superlens, FIG. 2c is a three-dimensional perspective view of a superlens sub-wavelength nano-cell structure, and FIG. 2d is a top view of a superlens sub-wavelength nano-cell of the present invention;
fig. 3 is a schematic diagram of laser and silicon photonic chip coupling using discrete lens and isolator elements in a conventional scheme.
Detailed Description
The present invention is described in detail below with reference to the drawings and examples, but the scope of the present invention should not be limited thereto.
As shown in fig. 1, the laser and silicon optical chip coupling structure based on a superlens of the present invention includes a laser 101, an isolator 201 and a silicon optical chip 301, wherein a collimating superlens 202 and a coupling superlens 203 are respectively integrated on two side surfaces of the isolator 201, the collimating superlens 202, the coupling superlens 203 and the isolator 201 share an optical axis, and the collimating superlens 202, the isolator 201, the coupling superlens 203 and the silicon optical chip 301 are sequentially arranged along a laser output direction of the laser 101.
The collimating metalens 202 and the coupling metalens 203 are sub-wavelength structures formed directly on the surfaces of the two sides of the isolator 201 by silicon deposition and silicon etching processes.
The micro-nano structures of the collimating super-lens 202 and the coupling super-lens 203 are respectively matched with the numerical apertures of the laser waveguide and the silicon optical waveguide, so that the coupling efficiency of the laser and the silicon optical waveguide is maximized.
The laser and silicon optical chip coupling structure based on the super lens is sequentially provided with a laser 101, an isolator 201 (the surface of which is integrated with a collimating super lens 202 and a coupling super lens 203) and a silicon optical chip 301. The isolator 201, the collimating metalens 202 and the coupling metalens 203 on the surface of the isolator are coaxial. Specifically, light exits from the laser 101, first passes through the collimating superlens 202 of the isolator 201, then passes through the coupling superlens 203, and finally is focused and coupled into the silicon optical chip 301.
The collimating metalens 202 and the coupling metalens 203 are integrated on the surfaces of the two sides of the isolator 201, respectively, and the conceptual diagram of the metalens is shown in fig. 2 a. The implementation mode and the principle are as follows: as shown in fig. 2b, which is a schematic diagram of light transmission through an isolator and a superlens, incident light is irradiated on an x-y plane, propagates in a positive direction along a z-axis, passes through the superlens, and is focused at a focal point with a focal length f. As shown in fig. 2c, the isolator is used as a substrate, and processes such as silicon deposition, photolithography, and silicon etching are usedThe surface of the isolator 201 is covered with silicon nano-pillars with the height of H to form a sub-wavelength nano-structure unit. As shown in fig. 2d, the size of the sub-wavelength nanostructure unit is a × a, the length of the deposited silicon nanopillar is L, the width of the deposited silicon nanopillar is W, and the included angle with the x-axis is θ, for a single sub-wavelength nanostructure unit, the size of the fixed unit is unchanged, when the length L, the width W, or the included angle θ of the silicon nanopillar is changed, the phase of the light wave can be changed, a plurality of sub-wavelength nanostructures are arranged according to a certain rule, and the phase, the amplitude, the polarization, and the like of the incident light can be changed. For the light beam emitted from the laser, the light energy distribution plane is an x-y plane, the positive direction along the z axis is a propagation direction, the center of the emitted light is taken as an origin, and the phase distribution of the super lens on the x-y plane is as follows:
wherein λ isdIs the wavelength of the outgoing light of the laser, and f is the focal length. Therefore, at each point of the corresponding x-y plane, the corresponding size and rotation angle of the silicon nano-pillar are designed according to the required phase, and a plurality of sub-wavelength nano-structure units with different forms are reasonably arranged, so that a super-lens structure can be formed, and the focusing function is realized.
The collimating metalens 202 and the coupling metalens 203 can be realized by silicon deposition and silicon etching on the surface of the isolator 201, and they can be aligned by photolithography, so that the isolator 201, the collimating metalens 202 and the coupling metalens 203 share a common optical axis. Fig. 3 shows a conventional laser-to-silicon photonic chip coupling scheme using discrete lenses and isolators. In contrast, the super lens is adopted to replace the original discrete lens, so that the coupling efficiency is improved, the overall structure is more compact, and the packaging complexity and cost are reduced.
The present invention is not limited to the above-described embodiments, and it will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the principle of the present invention, and such modifications and improvements are also considered to be within the scope of the present invention. Details not described in this specification are within the skill of the art that are well known to those skilled in the art.
Claims (3)
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011201584.0A CN112305689A (en) | 2020-11-02 | 2020-11-02 | Coupling structure of laser and silicon optical chip based on metalens |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113885137A (en) * | 2021-09-17 | 2022-01-04 | 上海交通大学 | Wavelength demultiplexing device based on on-chip metalens structure |
| CN113917575A (en) * | 2021-10-19 | 2022-01-11 | 江苏宇迪光学股份有限公司 | A multi-step variable-focus metalens group based on phase change material |
| CN114609722A (en) * | 2022-03-17 | 2022-06-10 | 中国工程物理研究院电子工程研究所 | Integrated light source based on light deflection modulation and preparation method thereof |
| CN114637120A (en) * | 2022-03-31 | 2022-06-17 | 天津山河光电科技有限公司 | Multifunctional super-surface beam splitter |
| CN116449490A (en) * | 2023-06-19 | 2023-07-18 | 南昌大学 | Preparation method of three-dimensional optical quantum chip module and three-dimensional optical quantum chip module |
| CN116609896A (en) * | 2023-07-18 | 2023-08-18 | 中天通信技术有限公司 | Silicon optical chip coupler, optical module and processing method of silicon optical chip coupler |
| WO2024055713A1 (en) * | 2022-09-14 | 2024-03-21 | 深圳迈塔兰斯科技有限公司 | Superlens design method, superlens and processing technique |
| WO2025032077A1 (en) * | 2023-08-10 | 2025-02-13 | Ams-Osram International Gmbh | Collimating metalens and illumination device |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105954834A (en) * | 2016-07-11 | 2016-09-21 | 武汉优信光通信设备有限责任公司 | Free space optical isolator with collimating lenses |
| CN108291983A (en) * | 2015-09-23 | 2018-07-17 | 奥斯兰姆施尔凡尼亚公司 | Collimating metalens and techniques for fusing collimating metalens |
| US20180275321A1 (en) * | 2015-04-23 | 2018-09-27 | California Institute Of Technology | Conformal optical metasurfaces |
| CN109196387A (en) * | 2016-04-05 | 2019-01-11 | 哈佛学院院长及董事 | Super lens for subwavelength resolution imaging |
| CN109884754A (en) * | 2019-04-23 | 2019-06-14 | 苏州海光芯创光电科技有限公司 | A coupling structure and packaging structure of a laser and a silicon optical chip |
| CN110727038A (en) * | 2019-09-24 | 2020-01-24 | 国科光芯(海宁)科技股份有限公司 | Metamaterial lens and structured light projection device |
| CN110989088A (en) * | 2019-12-06 | 2020-04-10 | 武汉大学 | Multiplexing/demultiplexing device and method based on lens and super-surface lens |
| US20210149081A1 (en) * | 2017-05-04 | 2021-05-20 | President And Fellows Of Harvard College | Meta-lens doublet for aberration correction |
-
2020
- 2020-11-02 CN CN202011201584.0A patent/CN112305689A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20180275321A1 (en) * | 2015-04-23 | 2018-09-27 | California Institute Of Technology | Conformal optical metasurfaces |
| CN108291983A (en) * | 2015-09-23 | 2018-07-17 | 奥斯兰姆施尔凡尼亚公司 | Collimating metalens and techniques for fusing collimating metalens |
| CN109196387A (en) * | 2016-04-05 | 2019-01-11 | 哈佛学院院长及董事 | Super lens for subwavelength resolution imaging |
| CN105954834A (en) * | 2016-07-11 | 2016-09-21 | 武汉优信光通信设备有限责任公司 | Free space optical isolator with collimating lenses |
| US20210149081A1 (en) * | 2017-05-04 | 2021-05-20 | President And Fellows Of Harvard College | Meta-lens doublet for aberration correction |
| CN109884754A (en) * | 2019-04-23 | 2019-06-14 | 苏州海光芯创光电科技有限公司 | A coupling structure and packaging structure of a laser and a silicon optical chip |
| CN110727038A (en) * | 2019-09-24 | 2020-01-24 | 国科光芯(海宁)科技股份有限公司 | Metamaterial lens and structured light projection device |
| CN110989088A (en) * | 2019-12-06 | 2020-04-10 | 武汉大学 | Multiplexing/demultiplexing device and method based on lens and super-surface lens |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113885137A (en) * | 2021-09-17 | 2022-01-04 | 上海交通大学 | Wavelength demultiplexing device based on on-chip metalens structure |
| CN113917575A (en) * | 2021-10-19 | 2022-01-11 | 江苏宇迪光学股份有限公司 | A multi-step variable-focus metalens group based on phase change material |
| CN114609722A (en) * | 2022-03-17 | 2022-06-10 | 中国工程物理研究院电子工程研究所 | Integrated light source based on light deflection modulation and preparation method thereof |
| CN114609722B (en) * | 2022-03-17 | 2024-01-19 | 中国工程物理研究院电子工程研究所 | Integrated light source based on light deflection modulation and preparation method thereof |
| CN114637120A (en) * | 2022-03-31 | 2022-06-17 | 天津山河光电科技有限公司 | Multifunctional super-surface beam splitter |
| WO2024055713A1 (en) * | 2022-09-14 | 2024-03-21 | 深圳迈塔兰斯科技有限公司 | Superlens design method, superlens and processing technique |
| CN116449490A (en) * | 2023-06-19 | 2023-07-18 | 南昌大学 | Preparation method of three-dimensional optical quantum chip module and three-dimensional optical quantum chip module |
| CN116449490B (en) * | 2023-06-19 | 2023-09-05 | 南昌大学 | Preparation method of three-dimensional optical quantum chip module and three-dimensional optical quantum chip module |
| CN116609896A (en) * | 2023-07-18 | 2023-08-18 | 中天通信技术有限公司 | Silicon optical chip coupler, optical module and processing method of silicon optical chip coupler |
| CN116609896B (en) * | 2023-07-18 | 2023-10-31 | 中天通信技术有限公司 | Silicon optical chip coupler, optical module and processing method of silicon optical chip coupler |
| WO2025032077A1 (en) * | 2023-08-10 | 2025-02-13 | Ams-Osram International Gmbh | Collimating metalens and illumination device |
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