Polytetrafluoroethylene composite material with arc ablation resistance and preparation method and application thereof
Technical Field
The invention belongs to the field of high-voltage insulating materials, and relates to a polytetrafluoroethylene composite material with arc ablation resistance and a preparation method thereof.
Background
High voltage circuit breakers are the most important protection devices in power systems. During the operation of the circuit breaker, most faults occur in the arc extinguishing chamber. The energy generated by the arc is absorbed by the nozzle of the arc chute, causing ablation, causing malfunction of the electrical equipment and possibly even causing safety problems. Therefore, the improvement of the arc ablation resistance of the nozzle has important significance for prolonging the service life of the high-voltage circuit breaker. At present, the arc extinguishing chamber nozzles are mainly made of insulating material polytetrafluoroethylene. However, with the increase of working voltage, pure polytetrafluoroethylene cannot meet the working requirements of circuits, and an insulating material with better arc ablation resistance is urgently needed.
Research shows that the introduction of inorganic filler into polytetrafluoroethylene can effectively improve the arc ablation resistance of the composite material. After the inorganic filler is added, the good insulating property of the composite material needs to be ensured, and in a plurality of inorganic fillers, because boron nitride has higher thermal conductivity and lower electrical conductivity, compared with other fillers, the composite material has better improvement on the arc ablation resistance of the composite material, and the insulating property of the material is not reduced.
At present, experiments show that the arc ablation resistance of the material is mainly related to the spectral reflectivity and the heat conducting property of the material, in the arc ablation process, the temperature of an arc column region is high and even reaches thousands of degrees centigrade, strong light can be emitted, the thermal decomposition of the material can be caused by high temperature, the chemical bonds of the material can be damaged by light energy, and meanwhile, the thermal effect is generated, so that the material is further damaged. The boron nitride is used as a reflective filler with high thermal conductivity, and can effectively improve the light reflectivity and the thermal conductivity of the polytetrafluoroethylene material.
However, previous researches mainly focus on filler content and filler particle size, the arc ablation resistance of the material is gradually increased with the increase of boron nitride content, and meanwhile, the arc ablation resistance of the material can be further increased by larger filler particle size, but no report is found on the research on improving the arc ablation resistance of the polytetrafluoroethylene composite material by changing the proportion of the micro-nano filler.
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide a polytetrafluoroethylene composite material with arc ablation resistance and a preparation method thereof.
In order to achieve the purpose, the invention adopts the following technical scheme to realize the purpose:
the invention discloses a polytetrafluoroethylene composite material with arc ablation resistance, which takes micron boron nitride and nanometer boron nitride as doping powder to dope polytetrafluoroethylene;
the composite material comprises, by mass, 7% of doped powder and 93% of polytetrafluoroethylene;
the grain size of the used micron boron nitride is 6-7 mu m; the particle size of the used nano boron nitride is 70-150 nm.
Preferably, in the doped powder, the nano boron nitride accounts for 0.5-1% and the micro boron nitride accounts for 6-6.5%.
The invention also discloses a preparation method of the polytetrafluoroethylene composite material with the arc ablation resistance, which comprises the following steps:
1) respectively sieving the nanometer boron nitride powder and the micron boron nitride powder, fully drying, and then mixing to obtain boron nitride-doped mixed powder;
2) fully and uniformly mixing the boron nitride-doped mixed powder with polytetrafluoroethylene particles to obtain mixed particles;
3) and pressing, molding and sintering the mixed particles to obtain the polytetrafluoroethylene composite material with the arc ablation resistance.
Preferably, in step 1), the boron nitride powder is sieved by a 100-mesh sieve.
Preferably, in the step 1), the sufficient drying is to dry the nanometer boron nitride powder and the micron boron nitride powder at 60-80 ℃ for at least 12 hours.
Preferably, in the step 2), the boron nitride-doped mixed powder and the polytetrafluoroethylene particles are fully and uniformly mixed by adopting a high-speed mixer, wherein the rotating speed of the high-speed mixer is 1500-2500 rpm.
Preferably, in step 3), the sintering schedule is as follows: within 2 hours, the temperature is raised from the room temperature to 180-200 ℃, the temperature is kept for 0.5 hour, then the temperature is raised to 330-350 ℃, the temperature is kept for 0.5 hour, finally the temperature is raised to 360-380 ℃, the temperature is kept for 3 hours, and then the temperature is cooled to the room temperature.
The invention also discloses application of the polytetrafluoroethylene composite material with the arc ablation resistance in preparation of high-voltage equipment.
Compared with the prior art, the invention has the following beneficial effects:
according to the invention, micron boron nitride with the particle size of 6-7 microns and nanometer boron nitride with the particle size of 70-150 nm are doped in polytetrafluoroethylene, and the polytetrafluoroethylene is modified by changing the proportion of the micron boron nitride and the nanometer boron nitride, so that the prepared polytetrafluoroethylene composite material has high thermal conductivity and high light reflectivity in infrared and visible light ranges, and the changes are beneficial to improving the arc ablation resistance of the composite material. The method provided by the invention can obviously improve the arc ablation resistance of the insulating dielectric material, has low process difficulty, strong operability and high reliability, and can be widely applied to the field of high-voltage insulating materials.
Preferably, when the mass fraction of the nano boron nitride is 0.5-1% and the mass fraction of the micro boron nitride is 6-6.5%, the arc ablation resistance of the composite material is the maximum, and compared with that of pure polytetrafluoroethylene, the ablation result under the condition of the proportion shows that: under the same conditions, the ablation amount of the pure polytetrafluoroethylene is 87.04mg, the ablation amount of the modified composite material is 60.62mg, and compared with the pure polytetrafluoroethylene, the performance is improved by 30.4%.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the following will clearly and completely describe the technical solution of the present invention with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is noted that the terms first, second and the like in the description and in the claims of the present invention are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order. It is to be understood that the data so used is interchangeable under appropriate circumstances such that the embodiments of the invention described herein are capable of operation in sequences other than those described herein. Furthermore, the terms "comprises," "comprising," and "having," and any variations thereof, are intended to cover a non-exclusive inclusion, such that a process, method, system, article, or apparatus that comprises a list of steps or elements is not necessarily limited to those steps or elements expressly listed, but may include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
The invention is described in further detail below:
a method for preparing an insulating dielectric material with improved arc ablation resistance comprises the following steps;
1) table 1 shows formulation ratio information of composite materials of different samples in 5 examples, in which polytetrafluoroethylene raw material, nano boron nitride powder, and micro boron nitride powder (the sum of mass fractions of the polytetrafluoroethylene raw material and the boron nitride powder is 100%, and the sum of mass fractions of the micro boron nitride and the nano boron nitride is 7%) are weighed in corresponding mass ratios, respectively, and in the doped powder, the particle size of the used micro boron nitride is 6 to 7 μm, and the particle size of the used nano boron nitride is 70 to 150 nm. Sieving the boron nitride powder, dividing the boron nitride powder into five groups of samples with different proportions, wherein the mass fraction of the boron nitride is 0.1-1.5% respectively, and pure polytetrafluoroethylene is used as a reference sample.
TABLE 1 micro-nano boron nitride mass fractions of different types of samples
2) And preparing polytetrafluoroethylene composite samples, wherein the preparation processes of various types of samples are basically the same.
Firstly, mixing proportioned boron nitride powder and polytetrafluoroethylene raw materials, and putting a mixed sample into a high-speed mixer for mixing at the rotating speed of 1500-2500 rpm. And after fully mixing, putting the sample into a fixed mould, and pressing and forming by adopting a mould pressing mode. And then putting the pressed sample into a sintering chamber for high-temperature sintering. Raising the temperature from room temperature to 180-200 ℃, keeping the temperature for 2 hours, keeping the temperature for 0.5 hour, then raising the temperature to 330-350 ℃, keeping the temperature for 0.5 hour, then raising the temperature to 360-380 ℃, keeping the temperature for 3 hours, and then cooling to room temperature. And finally, machining the sample to prepare the sample with the specified size.
Table 2 shows experimental results of light reflectivity of pure polytetrafluoroethylene and samples of different models, and table 3 shows thermal conductivity test results of pure polytetrafluoroethylene samples and polytetrafluoroethylene composite samples of different micro-nano boron nitride ratios.
TABLE 2 light reflectance test results for samples of different models
Sample type
|
Ultraviolet light reflectance (%)
|
Visible light reflectance (%)
|
Infrared light reflectance (%)
|
Pure polytetrafluoroethylene
|
60~80
|
60~70
|
50~70
|
A
|
60~80
|
70~80
|
≥80
|
B
|
60~80
|
70~80
|
≥80
|
C
|
60~80
|
70~80
|
≥80
|
D
|
60~80
|
70~80
|
≥80
|
E
|
60~80
|
70~80
|
≥80 |
It can be seen from table 2 that the addition of boron nitride significantly improves the light reflectivity of ptfe in the visible and infrared regions.
TABLE 3 results of thermal conductivity measurements on samples of different types
Sample type
|
Thermal conductivity (W/(m.K))
|
Pure polytetrafluoroethylene
|
0.301
|
A
|
0.419
|
B
|
0.4336
|
C
|
0.471
|
D
|
0.4546
|
E
|
0.3974 |
Table 3 shows that the thermal conductivity of the ptfe is improved after the boron nitride is added, and when the mass fraction of the nano boron nitride is 0.5% to 1% and the mass fraction of the micro boron nitride is 6.5% to 6%, the thermal conductivity is improved to the maximum, which is 56.5% higher than that of the pure ptfe.
And carrying out an arc ablation resistance test on the pure polytetrafluoroethylene and polytetrafluoroethylene composite samples of different models. In the experimental process, the thickness of the sample is 3mm, the mass of each sample before ablation is measured, then the sample is placed below two tungsten electrodes, the distance between the electrodes is 6.35 +/-0.1 mm, the testing time is 300s, the experimental scheme is shown in table 4, the sample is wiped by alcohol after ablation is finished, the quality of the sample is measured, the change of the quality of the sample is used as the judgment standard of the arc ablation resistance of the material, and the smaller the ablation quality is, the better the arc ablation resistance of the sample is. Table 5 shows the results of the 300s ablation test for pure ptfe and different types of coupons.
TABLE 4 Experimental scheme of arc ablation resistance testing device
Phases
|
Time period(s)
|
Arc current (mA)
|
Total time(s)
|
1
|
1/8s on and 7/8s off
|
10
|
60
|
2
|
1/4s on and 3/4s off
|
10
|
120
|
3
|
1/4s on and 1/4s off
|
10
|
180
|
4
|
PersistenceIs connected to
|
10
|
240
|
5
|
Is continuously switched on
|
20
|
300 |
TABLE 5 ablation results for different model specimens
Sample type
|
Ablation amount (mg) for 300s
|
Pure polytetrafluoroethylene
|
87.04
|
A
|
67.09
|
B
|
65.48
|
C
|
60.62
|
D
|
62.79
|
E
|
67.22 |
It can be seen from table 5 that, after the boron nitride powder is added, the ablation amount of the polytetrafluoroethylene composite sample is obviously less, and compared with pure polytetrafluoroethylene, the arc ablation resistance is obviously improved. Wherein when the mass fraction of the nanometer boron nitride is 0.5-1 percent and the mass fraction of the micrometer boron nitride is 6.5-6 percent, the ablation amount of the sample is the minimum, the arc ablation resistance is the best, and the ablation resistance is improved by 30.4 percent compared with that of pure polytetrafluoroethylene.
The preparation method provided by the invention can obviously improve the arc ablation resistance of the polytetrafluoroethylene composite material.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.