Detailed Description
As described in the background art, in the solution that the touch electrodes are integrated inside the display panel, the routing of the touch electrodes crosses the frame area inside the display panel, and a plurality of dams (banks) are usually disposed in the frame area, and the dams are used to block structures such as liquid film layers (e.g., encapsulation ink) in the encapsulation layer before the encapsulation layer of the display panel. The inventor finds that the dams form a larger height difference compared with other areas of the display panel, so that in the process of exposing and developing the metal layer to form the touch control wires, photoresist in the areas between the dams is prone to incomplete exposure, photoresist residues are prone to occurring in the areas between the dams, the metal layer covered by the residual photoresist cannot be etched and removed, the distance between adjacent touch control wires is usually small, the residual metal layer may short-circuit the adjacent touch control wires, the touch control electrodes connected with the touch control wires cannot accurately identify the touch control positions of the operation bodies, and the reliability problem of abnormal functions of the touch control module is caused.
In order to solve the problem, the inventor of the present invention further researches and discovers that the areas where the photoresist residue is likely to occur are generally the areas between the two dams and the areas adjacent to the peripheral dams, and the touch traces located in the areas are narrowed, so that the distance between the touch traces can be correspondingly increased, and the probability that the residual metal is connected with the adjacent touch traces due to the photoresist residue can be favorably reduced. Based on the above idea, the inventors propose a specific structure of a display panel.
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
An embodiment of the present application provides a display panel, as shown in fig. 1 and fig. 2, fig. 1 is a schematic top view structure diagram of a step area of the display panel, and fig. 2 is an enlarged schematic diagram of a dashed box in fig. 1, where the display panel includes:
a substrate 10, the substrate 10 including a display area aa and a stepped area adjacent to the display area aa.
A first dam 21 and a second dam 22 located on the surface of the step area, the second dam 22 being located on the side of the first dam 21 away from the display area, a first region 111 being included between the first dam 21 and the second dam 22, a second region 112 being included on the side of the second dam 22 away from the first dam 21, the second region 112 being adjacent to the second dam 22.
The width of the touch traces 30 located on the substrate 10 and on the same side as the first dam 21 and the second dam 22 is smaller than the width of the touch traces 30 located in the first area 111 and the second area 112.
The step region shown in fig. 1 mainly includes a fan-out (fan-out) region 11 and a bending (bending) region 12, a first dam 21 and a second dam 22 are disposed on the fan-out region 11, a partial region of the first dam 21 away from the second dam 22 is generally referred to as an organic layer clearance region 1JK1, a region between the first dam 21 and the second dam 22 is referred to as an organic layer clearance region 2JK2, and a region of the second dam 22 away from the first dam 21 is referred to as an organic layer clearance region 3JK3, in this embodiment, the first region 111 is an organic layer clearance region 2JK2, the second region 112 is an organic layer clearance region 3JK3, and in these two regions, a problem that a photoresist is incompletely exposed to cause residue and a metal layer covered by the residual photoresist cannot be removed easily occurs. The touch trace 30 enters the bending region 12 at the edge of the fan-out region 11 through the wire changing hole 40, and the bending region 12 is bent to the back of the display panel in a bending manner, so as to "hide" the bending region 12 on the display surface.
In this embodiment, the width of the touch traces 30 in the first region 111 and the second region 112 is set to be smaller than the width of the touch traces 30 in the preset region 113, which is beneficial to increasing the distance between the adjacent touch traces 30, so as to reduce the probability of short circuit between the adjacent touch traces 30 due to the residual metal caused by the residual photoresist, thereby being beneficial to ensuring the normal touch function of the touch electrodes connected to the touch traces 30 and avoiding the short circuit problem of the touch traces 30.
The preset region 113 is a region excluding the first region 111 and the second region 112, and specifically includes a region located on a side of the first region 111 away from the second region 112, a region located on a side of the second region 112 away from the first region 111, and surfaces of the first dam 21 and the second dam 22.
The specific structure of the touch traces 30 in the first area 111 and the second area 112 may include two types, referring to fig. 3 and fig. 4, fig. 3 and fig. 4 are schematic cross-sectional structure diagrams along the line BB' in fig. 2, in fig. 3, the touch traces 30 in the first area 111 and the second area 112 are manufactured through one exposure and development process, and the width of the touch traces 30 in the first area 111 and the second area 112 is smaller than the width of the touch traces 30 in the preset area 113. Since the etching amount is gradually reduced along with the progress of the etching depth in the actual etching process, referring to fig. 5, fig. 5 is a schematic view of a cross-sectional structure along a line BB 'in fig. 2, a cross-sectional shape of the touch trace 30 along a line perpendicular to the line BB' is approximately a regular trapezoid with a narrow top and a wide bottom, in this embodiment, the width of the touch trace 30 may refer to a width of a top surface of the touch trace 30, may also refer to a width of a bottom surface of the touch trace 30, and may also refer to an average width of the touch trace 30.
In fig. 4, the touch traces 30 in the first area 111 and the second area 112 include a first trace 31 and a second trace 32 sequentially stacked on the substrate 10.
The width of the first traces 31 is smaller than the width of the second traces 32, and the distance between adjacent first traces 31 is greater than the distance between adjacent second traces 32.
In this embodiment, the first wire 31 located below is manufactured through one exposure and development process, and the distance between adjacent first wires 31 is relatively large, which is beneficial to avoiding the short circuit problem of the adjacent first wires 31 caused by the residual photoresist. After the first wire 31 is prepared, another metal layer is formed on the first wire 31, and the metal layer is exposed and developed for the second time to form a second wire 32, because the height of the second wire 32 is higher than that of the first wire 31, the height of the photoresist on the second wire 32 is also higher, which is beneficial to reducing the height difference between the photoresist and the first and second dams 21 and 22, and is beneficial to avoiding the problem of insufficient exposure of the photoresist in the exposure process. In the embodiment shown in fig. 4, the widths of the first trace 31 and the second trace 32 can be adjusted by controlling the exposure amount of the photoresist on the first trace 31 and the second trace 32, specifically, the exposure amount of the photoresist on the first trace 31 is greater than the exposure amount on the second trace 32, so that the width of the first trace 31 is smaller, and the width of the second trace 32 is larger.
In addition, in the embodiment shown in fig. 4, since the width of the second trace 32 is wider, it is beneficial to reduce the resistance of the touch trace 30 located in the first area 111 and the second area 112, and reduce the loss of the touch trace 30 when transmitting signals. In the embodiment shown in fig. 4, the width of the touch traces 30 located in the first area 111 and the second area 112 may refer to an average width of the first traces 31 and the second traces 32, may also refer to a width of the first traces 31, and may also refer to a width of the second traces 32. In fig. 3-5, an interlayer Dielectric (ILD) 13, a Planarization Layer (PLN) 14, an encapsulation film 15, and an electrode buffer Layer 16 are also shown on the substrate 10.
Next, optional values of the widths of the touch traces 30 located in the first area 111 and the second area 112 are analyzed, generally, the smaller the widths of the touch traces 30 located in the first area 111 and the second area 112 are, the larger the distance between the adjacent touch traces 30 is, which is more beneficial to avoiding the problem of residual photoresist, but the touch traces 30 with too small widths may cause too large resistance, and therefore, the difference between the width of the touch trace 30 located in the first area 111 and the second area 112 and the width of the touch trace 30 located in the preset area 113 is generally less than 5 μm, so as to avoid causing large and sudden changes in resistance.
In addition, in a general case, the width of the touch trace 30 located in the preset region 113 is usually within a range of 10 to 15 μm, and correspondingly, the width of the touch trace 30 located in the first region 111 and the second region 112 may be within a range of 5 to 10 μm, where the range of the width can ensure that the resistance value of the touch trace 30 located in the first region 111 and the second region 112 is not suddenly changed compared with the resistance value of the touch trace 30 located in the preset region 113, and can also ensure that the distance between the touch traces 30 located in the first region 111 and the second region 112 is over 20 μm, so as to avoid a short circuit phenomenon caused by a residual photoresist problem between adjacent touch traces 30.
On the basis of the above embodiments, in an embodiment of the present application, as shown in fig. 6, fig. 6 is a schematic cross-sectional structure diagram of the display panel, where the display panel further includes: an encapsulation film layer 50, a first filling layer 51 and a second filling layer 52.
The first filling-up layer 51 is located in the first region 111, and the second filling-up layer 52 is located in the second region 112.
The packaging film layer 50 covers at least a surface of the first dam 21 facing away from the substrate 10 and surfaces of the first region 111 and the second region 112 of the substrate 10.
In this embodiment, by filling the first filling layer 51 and the second filling layer 52 to reduce the height difference between the first area 111 and the second area 112 and the first dam 21 and the second dam 22, the specific cross-sectional shape of the first filling layer 51 may be rectangular, and the height of the first filling layer 51 may be smaller than the height of the encapsulation film layer 15 covering the first dam 21 and the second dam 22, or may be the same as the height of the encapsulation film layer 15 covering the first dam 21 and the second dam 22 (i.e. the height difference between the encapsulation film layer 15 on the first dam 21 and the second dam 22 and the height difference between the first filling layer 51 and the second filling layer 52 may be almost zero, on one hand, the risk of remaining photoresist when the touch 30 is exposed is reduced, on the other hand, the step difference when the touch trace 30 passes through the first area 111 and the second area 112 is reduced, which is beneficial to reducing the risk of wire breakage of the touch trace 30 located in the first area 111 and the second area 112. The heights of the first and second filling layers 51 and 52 refer to the maximum distance between the first and second filling layers 51 and 52 and the encapsulation film layer 50 and the substrate 10 in the direction perpendicular to the substrate 10, and the height of the encapsulation film layer 15 covering the first and second filling layers 51 and 52 refers to the maximum distance between the portion of the encapsulation film layer 15 and the substrate 10 in the direction perpendicular to the substrate 10.
The specific cross-sectional shape of the second filling layer 52 may be a right triangle or a right trapezoid, for example, a right triangle having a right-angled side attached to the second dam 22 and a hypotenuse side extending from the top surface near the second dam 22 to the substrate 10, so that the touch trace 30 may extend from the top surface of the second dam 22 to an area of the second area 112 far from the first area 111 along the hypotenuse side, and the height difference between the touch trace 30 located in the second area 112 and the second dam 22 is reduced. Of course, the cross-sectional shapes of the second filler layer 52 and the first filler layer 51 may be other shapes as long as the above-described object can be achieved.
In this embodiment, due to the existence of the first filling layer 51 and the second filling layer 52, the height difference between the first dam 21 and the second dam 22 and the first area 111 and the second area 112 is reduced, which is beneficial to reducing the probability of photoresist residue during exposure, so that the width difference between the touch traces 30 located in the first area 111 and the second area 112 and the touch traces 30 located in the preset area 113 can be appropriately reduced, which is beneficial to reducing the resistance difference between the touch traces 30 located in the first area 111 and the second area 112 and the touch traces 30 located in the preset area 113.
Optionally, in an embodiment of the present application, the first filling-up layer 51 and the second filling-up layer 52 are both inorganic material layers. The waterproof performance of the inorganic material is better than that of the organic material, so that the inorganic material layer as the first filling layer 51 and the second filling layer 52 does not affect the packaging effect of the packaging film layer 50, and the stress accumulation is small because the bending is not needed here.
Still referring to fig. 6, the Encapsulation layer 50 may be a Thin-Film Encapsulation (Thin-Film Encapsulation) layer, the Thin-Film Encapsulation layer generally includes a three-layer structure, the upper and lower layers are generally organic layers (i.e., a first organic Film 151 and a second organic Film 153) prepared by a Chemical Vapor Deposition (CVD) method, and the middle layer is generally an Ink layer 152 formed by Ink Jet Printing (Ink Jet Printing) or the like. Fig. 6 also shows an interlayer dielectric layer 13, a planarization layer 14, an FPC (Flexible Printed Circuit) 60, and an organic film layer 17 on the bending region, wherein the touch traces 30 are electrically connected to the contact pads on the FPC after passing through the first and second dams 21 and 22.
Referring to fig. 7, 8, 9, 10, 11 and 12, fig. 7 to 12 are schematic partial sectional structure views of the display panel, which further includes: a cushioning structure 70 located in the first region 111, wherein the height of the cushioning structure 70 is smaller than the height of the first dam 21 and smaller than the height of the second dam 22.
Due to the existence of the buffer structure 70, the touch traces 30 in the first region 111 and the second region 112 can be prepared on the buffer structure 70, which is beneficial to reducing the height difference between the photoresist and the first dam 21 and the second dam 22 when the touch traces 30 are prepared, thereby reducing the probability of incomplete exposure of the photoresist.
As for the specific structure of the buffer structure 70, fig. 7 to 12 show two possible structures, and referring to fig. 7, 8, 9, and 10, the buffer structure 70 includes a plurality of first buffer units 71.
Each of the first buffer units 71 includes a single organic film layer or two or more organic film layers stacked on top of each other.
In fig. 7 to 10, a plurality of the first buffer units 71 are arranged at intervals, and each of the first buffer units 71 may be a single organic film layer or two or more organic film layers arranged in a stacked manner. The first dam 21 and the second dam 22 each include two organic film layers stacked, where 211 and 212 denote the organic film layers constituting the first dam 21, 221 and 222 denote the organic film layers constituting the second dam 22, and generally, 221 and 212 denote organic film layers formed by preparing the same organic material. The types of the single organic film layer or the organic film layers stacked in two or more layers included in the first buffer unit 71 may be the same as 211, 212, 221, and 222, respectively. For example, in fig. 7, three first buffer units 71 each include two organic film layers stacked, wherein the two first buffer units 71 facing the left side of fig. 7 have the same kind of two organic film layers as those of the first dam 21 and the same stacking manner, and the two first buffer units 21 may be formed simultaneously with the first dam 21. The kind of the two organic film layers of the one first buffer unit 71 on the right side in fig. 7 is the same as the kind and stacking manner of the two organic film layers of the second dam 22, and the first buffer unit 21 may be formed simultaneously with the second dam 22. In fig. 8 and 9, three first buffer units 71 each include a single organic film layer, and each first buffer unit 71 includes one of the single organic film layers 211, 212, 221, and 222, for example, in fig. 8, the two first buffer units 71 on the left side include the same kind of single organic film layers 211 and 221, the one first buffer unit 71 on the right side includes the same kind of single organic film layers 222, in fig. 9, the two first buffer units 71 on the left side include the same kind of single organic film layers 211, and the one first buffer unit 71 on the right side includes the same kind of single organic film layers 221 and 212. In fig. 10, the first buffer units 71 on both sides include two organic film layers stacked, the two organic film layers stacked in the first buffer unit 71 on the left side are the same as the two organic film layers included in the first dam 21 in kind and stacking manner, and the two organic film layers stacked in the first buffer unit 71 on the right side are the same as the two organic film layers included in the second dam 22 in kind and stacking manner. The middle first buffer unit 71 includes a single organic film layer, which may be the same as the organic film layers 221 and 212.
Referring to fig. 11 and 12, the buffer structure 70 includes a second buffer unit 72 and at least two third buffer units 73.
At least two third buffer units 73 are arranged on the surface of the second buffer unit 72 at intervals.
In fig. 11 and 12, a second buffer unit 72 having a large area may be formed as a bottom layer, and then at least two third buffer units 73 may be formed on the second buffer unit 72, where the third buffer units 73 may be formed of the same material as the second buffer unit 72 or the second buffer unit 72, and in fig. 11, at least one of the third buffer units 73 and the second buffer unit 72 may be an organic film layer of the same material. This allows at least one third buffer unit 73 and the second buffer unit 72 to be prepared and formed in the same process, which is advantageous for simplifying the preparation process of the buffer structure 70. In fig. 12, the organic film layer of the second buffer unit 72 is the same as 222, and can be formed in the same step as 222, and the third buffer unit 73 can be formed in the same step as 211, 212, or 221, respectively, so as to simplify the process of preparing the buffer structure 70.
Similarly, the kind of the organic film forming the second and third buffer units 72 and 73 may be the same as the kind of the organic film forming the first or second dam 21 or 22, to further simplify the fabrication process of the buffer structure 70.
A method for manufacturing a display panel provided in an embodiment of the present application is described below. Correspondingly, an embodiment of the present application further provides a method for manufacturing a display panel, as shown in fig. 13, fig. 13 is a schematic flow chart of the method for manufacturing the display panel, and the method for manufacturing the display panel includes:
s101: a substrate 10 is provided, the substrate 10 comprising a display region and a step region adjacent to the display region. Referring to fig. 14, fig. 14 is a schematic top view of the substrate 10.
S102: a first dam 21 and a second dam 22 are formed on the surface of the step area, the second dam 22 is located on the side of the first dam 21 far away from the display area, a first area 111 is included between the first dam 21 and the second dam 22, and a second area 112 is included on the side of the second dam 22 far away from the first dam 21. Referring to fig. 15, fig. 15 is a schematic top view of the substrate 10 after step S102.
S103: forming a touch trace 30 on the substrate 10 and on the same side as the first dam 21 and the second dam 22, wherein the width of the touch trace 30 in the first area 111 and the second area 112 is smaller than the width of the touch trace 30 in the preset area 113. Fig. 2 is a schematic cross-sectional view of the substrate 10 after step S103.
As mentioned above, the preparation process of the first dam 21 and the second dam 22 is generally performed before the encapsulation film layer 50, that is, referring to fig. 16, fig. 16 is a flowchart illustrating the preparation method of the display panel, and after the first dam 21 and the second dam 22 are formed on the surface of the step area and before the touch trace 30 is formed, the method further includes:
s104: forming an encapsulation film layer 50, wherein the encapsulation film layer 50 covers at least one side surface of the first dam 21 facing away from the substrate 10.
Referring to fig. 6, a schematic cross-sectional structure of a display panel including the encapsulation film layer 50 is shown in fig. 6.
S105: forming a buffer structure 70 located in the first region 111, wherein the height of the buffer structure 70 is smaller than the height of the first dam 21 and smaller than the height of the second dam 22.
Referring to fig. 7-10, a possible structural schematic of the buffer structure 70 is shown in fig. 7-10.
Still referring to fig. 4, when the touch traces 30 located in the first area 111 and the second area 112 include a first trace 31 and a second trace 32 sequentially stacked on the substrate 10, the process for preparing the touch traces 30 located in the first area 111 and the second area 112 includes:
forming a first photoresist layer on a first metal layer on the substrate 10, and exposing and developing the first metal layer by using the first photoresist layer as a mask to obtain the first trace 31;
forming a second metal layer on one side of the first wire 31 away from the substrate 10, forming a second photoresist layer on the second metal layer, and exposing and developing the second metal layer by using the second photoresist layer as a mask to obtain the second wire 32, wherein the width of the first wire 31 is smaller than that of the second wire 32, and the distance between adjacent first wires 31 is greater than that between adjacent second wires 32.
That is, in this embodiment, the first wire 31 located below is manufactured through one exposure and development process, and the distance between adjacent first wires 31 is relatively large, which is beneficial to avoiding the short circuit problem of the adjacent first wires 31 caused by the residual photoresist. After the first wire 31 is prepared, another metal layer is formed on the first wire 31, and the metal layer is exposed and developed for the second time to form a second wire 32, because the height of the second wire 32 is higher than that of the first wire 31, the height of the photoresist on the second wire 32 is also higher, which is beneficial to reducing the height difference between the photoresist and the first and second dams 21 and 22, and is beneficial to avoiding the problem of insufficient exposure of the photoresist in the exposure process. In the embodiment shown in fig. 4, the widths of the first trace 31 and the second trace 32 can be adjusted by controlling the exposure amount of the photoresist on the first trace 31 and the second trace 32, specifically, the exposure amount of the photoresist on the first trace 31 is greater than the exposure amount on the second trace 32, so that the width of the first trace 31 is smaller, and the width of the second trace 32 is larger.
Correspondingly, an embodiment of the present application further provides a display device, as shown in fig. 17, fig. 17 is a schematic structural diagram of the display device a100, and the display device a100 includes the display panel according to any of the embodiments.
In summary, embodiments of the present application provide a display panel, a method for manufacturing the same, and a display device, wherein the substrate of the display panel comprises a display area and a step area, a first dam and a second dam are arranged on the step area, meanwhile, a touch control wiring is arranged on the substrate, a first area is arranged between the first dam and the second dam, the side of the second dam, which is far away from the first dam, comprises a second area, the width of the touch wire in the first area and the second area is smaller than that of the touch wire in a preset area, the probability of the adhesion or contact of the adjacent touch-control wires caused by the problem of residual photoresist in the preparation process of the touch-control wires positioned in the first area and the second area is reduced, and the probability of the short circuit problem of the touch-control wires in the preparation process is reduced.
Features described in the embodiments in the present specification may be replaced with or combined with each other, each embodiment is described with a focus on differences from other embodiments, and the same and similar portions among the embodiments may be referred to each other.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.