CN112251738A - Preparation method of plasma chemical vapor deposition substrate surface nano-film - Google Patents
Preparation method of plasma chemical vapor deposition substrate surface nano-film Download PDFInfo
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- CN112251738A CN112251738A CN202011059598.3A CN202011059598A CN112251738A CN 112251738 A CN112251738 A CN 112251738A CN 202011059598 A CN202011059598 A CN 202011059598A CN 112251738 A CN112251738 A CN 112251738A
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- 239000000758 substrate Substances 0.000 title claims abstract description 85
- 239000002120 nanofilm Substances 0.000 title claims abstract description 45
- 238000005229 chemical vapour deposition Methods 0.000 title claims abstract description 17
- 238000002360 preparation method Methods 0.000 title claims abstract description 8
- 229910052751 metal Inorganic materials 0.000 claims abstract description 94
- 239000002184 metal Substances 0.000 claims abstract description 94
- 238000006243 chemical reaction Methods 0.000 claims abstract description 60
- 238000001035 drying Methods 0.000 claims abstract description 44
- 239000000463 material Substances 0.000 claims abstract description 41
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims abstract description 38
- 238000001816 cooling Methods 0.000 claims abstract description 32
- 238000000034 method Methods 0.000 claims abstract description 30
- 208000028659 discharge Diseases 0.000 claims abstract description 20
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims abstract description 19
- 238000004140 cleaning Methods 0.000 claims abstract description 13
- 239000011248 coating agent Substances 0.000 claims abstract description 13
- 238000000576 coating method Methods 0.000 claims abstract description 13
- 239000007789 gas Substances 0.000 claims description 36
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 12
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 230000000694 effects Effects 0.000 claims description 7
- 230000003628 erosive effect Effects 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 7
- MGWGWNFMUOTEHG-UHFFFAOYSA-N 4-(3,5-dimethylphenyl)-1,3-thiazol-2-amine Chemical compound CC1=CC(C)=CC(C=2N=C(N)SC=2)=C1 MGWGWNFMUOTEHG-UHFFFAOYSA-N 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- JCXJVPUVTGWSNB-UHFFFAOYSA-N nitrogen dioxide Inorganic materials O=[N]=O JCXJVPUVTGWSNB-UHFFFAOYSA-N 0.000 claims description 6
- 238000004806 packaging method and process Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 abstract description 3
- 230000008021 deposition Effects 0.000 abstract 1
- 238000005260 corrosion Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 150000002500 ions Chemical class 0.000 description 5
- 239000010407 anodic oxide Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 229910017083 AlN Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 238000007743 anodising Methods 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000010329 laser etching Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229920006267 polyester film Polymers 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 229910052705 radium Inorganic materials 0.000 description 1
- HCWPIIXVSYCSAN-UHFFFAOYSA-N radium atom Chemical compound [Ra] HCWPIIXVSYCSAN-UHFFFAOYSA-N 0.000 description 1
- 238000005067 remediation Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/02—Pretreatment of the material to be coated
- C23C16/0227—Pretreatment of the material to be coated by cleaning or etching
- C23C16/0245—Pretreatment of the material to be coated by cleaning or etching by etching with a plasma
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Physical Vapour Deposition (AREA)
- Manufacturing Of Printed Wiring (AREA)
Abstract
The invention discloses a preparation method of a plasma chemical vapor deposition substrate surface nano-film, which comprises the following steps: the method comprises the following steps: cleaning the surface of the metal substrate of the circuit board by using acetone and alcohol, and performing a second step: drying the cleaned metal substrate of the circuit board by using a drying box; step three: placing the dried circuit board metal base material in a cooling box for cooling; step four: placing the circuit board metal base material cooled in the step two into a plasma reaction chamber, and placing the circuit board metal base material into a plasma reaction chamber, wherein the step five: performing surface discharge treatment by an ion source discharge treatment system in a low-vacuum environment of a plasma reaction chamber; step six: sending the mixed gas with the high-corrosivity gas into the plasma reaction chamber through a gas guide pipe of the plasma reaction chamber; step seven: the coating material and the plasma gas are sent into the plasma reaction chamber together, and the nano film is formed on the surface of the metal substrate of the circuit board by deposition.
Description
Technical Field
The invention relates to the technical field of substrate surface processing, in particular to a preparation method of a plasma chemical vapor deposition substrate surface nano-film.
Background
The name of the circuit board is: ceramic circuit board, alumina ceramic circuit board, aluminium nitride ceramic circuit board, PCB board, aluminium base board, high frequency board, thick copper board, impedance board, PCB, ultra-thin circuit board, printed wiring board etc.. The circuit board enables the circuit to be miniaturized and visualized, and plays an important role in batch production of fixed circuits and optimization of electric appliance layout. The Circuit Board can be called as a Printed Circuit Board or a Printed Circuit Board, the english name (Printed Circuit Board) PCB, (Flexible Printed Circuit Board) FPC Circuit Board (FPC Circuit Board is also called as a Flexible Circuit Board) which is a Flexible Printed Circuit Board with high reliability and excellent property and is made of polyimide or polyester film as a base material, has the characteristics of high wiring density, light weight, thin thickness and good bending property), and a Soft and hard combination Board (Soft and hard combination Board) -FPC and PCB are born and developed, and the new product of the Soft and hard combination Board is promoted. Therefore, the rigid-flex circuit board is a circuit board with FPC (flexible printed circuit) characteristics and PCB (printed circuit board) characteristics, which is formed by combining a flexible circuit board and a rigid circuit board according to relevant process requirements through processes such as pressing and the like.
The surface of a metal substrate product of the circuit board is generally subjected to processes such as anodic oxidation and the like, a layer of metal oxide protective film is formed on the surface of the metal substrate product, and the protective film can protect a metal substrate from being corroded by substances such as external water vapor and the like to a certain extent and has certain corrosion resistance. But because in the production process, often because the difference of product quality management and control, cause the thickness of anodic oxide film inhomogeneous easily, simultaneously, if the circumstances such as radium carving processing of needs carrying out the trade mark can cause the anodic oxide film layer on circuit board metal substrate surface loose, carve through the anodic oxide film layer even, lead to the metal substrate directly to expose in the external environment. At the moment, parts subjected to special treatment such as laser etching are easily corroded by external environment substances to cause local corrosion, and after the local corrosion is generated, the corrosion range is gradually enlarged, and finally corrosion in a certain area is formed, so that the appearance, the mechanical property and the service life of a metal substrate product of the circuit board are seriously influenced.
Some existing remediation methods also comprise surface spraying/soaking treatment liquid and re-anodizing treatment, which belong to traditional physical and chemical methods, and have the problems of long production process time, high cost, insufficient adhesion, unstable quality, poor environmental friendliness and the like, so that a preparation method capable of depositing a nano film on the surface of a metal substrate of a circuit board is urgently needed.
Disclosure of Invention
The present invention aims at providing a method for preparing a nano film on the surface of a plasma chemical vapor deposition substrate, so as to solve the problems in the background technology.
In order to achieve the purpose, the invention provides the following technical scheme:
a method for preparing a nano film on the surface of a plasma chemical vapor deposition substrate comprises the following steps:
the method comprises the following steps: the surface of the metal substrate of the circuit board is cleaned by utilizing acetone and alcohol,
step two: drying the cleaned metal substrate of the circuit board by using a drying box;
step three: placing the dried circuit board metal base material in a cooling box for rapid cooling;
step four: placing the circuit board metal base material cooled in the step two into a plasma reaction chamber,
step five: performing surface discharge treatment by an ion source discharge treatment system in a low-vacuum environment of a plasma reaction chamber to activate the surface of the metal substrate of the circuit board;
step six: further, the mixed gas with high-corrosivity gas is sent into the plasma reaction chamber through the gas guide pipe of the plasma reaction chamber, so that the surface of the metal base material of the circuit board is corroded, and the forming effect of the subsequent nano film on the surface of the metal base material of the circuit board is improved;
step seven: under the vacuum degree, feeding the coating material and plasma gas into a plasma reaction chamber together, and carrying out collision reaction on the coating material and the plasma gas to deposit and form a nano film on the surface of the metal substrate of the circuit board;
step eight: closing the plasma reaction chamber, and taking out the circuit board metal substrate coated with the nano film after the atmospheric pressure of the plasma reaction chamber is restored;
step nine: and packaging the taken out circuit board metal substrate covered with the nano film.
As a further scheme of the invention: in the first step, the metal substrate of the circuit board is subjected to ultrasonic cleaning by using acetone and alcohol for 20-30min, and after the cleaning by using the acetone and alcohol is finished, the metal substrate of the circuit board is further put into deionized water for secondary ultrasonic cleaning treatment, wherein the cleaning time is 15-30 min.
As a still further scheme of the invention: and in the second step, the drying temperature of the drying oven is 60-75 ℃, the humidity in the drying oven is kept at 6-8%, and the drying time is 30-45 min.
As a still further scheme of the invention: and in the third step, the cooling temperature of the cooling box is 20-25 ℃, the humidity in the drying box is kept at 6-8%, and the cooling time is 40-60 min.
As a still further scheme of the invention: in the fifth step, the low vacuum degree of the plasma reaction chamber is 6-8pa, and the discharge treatment time is 30-35 min.
As a still further scheme of the invention: in the sixth step, the high-erosiveness gas is nitrogen dioxide, and the erosion time is 20-30 min.
As a still further scheme of the invention: the circuit board metal substrate is made of aluminum or alloy materials.
Compared with the prior art, the invention has the beneficial effects that:
the preparation method of the nano film on the surface of the metal substrate of the circuit board is simple, the production period is short, the cost is low, and the effect of depositing the nano film on the surface of the metal substrate of the circuit board is improved by pre-activating and eroding the metal substrate of the circuit board.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the embodiment of the invention, a preparation method of a plasma chemical vapor deposition substrate surface nano film comprises the following steps:
the method comprises the following steps: the surface of the metal substrate of the circuit board is cleaned by utilizing acetone and alcohol,
step two: drying the cleaned metal substrate of the circuit board by using a drying box;
step three: placing the dried circuit board metal base material in a cooling box for rapid cooling;
step four: placing the circuit board metal base material cooled in the step two into a plasma reaction chamber,
step five: performing surface discharge treatment by an ion source discharge treatment system in a low-vacuum environment of a plasma reaction chamber to activate the surface of the metal substrate of the circuit board;
step six: further, the mixed gas with high-corrosivity gas is sent into the plasma reaction chamber through the gas guide pipe of the plasma reaction chamber, so that the surface of the metal base material of the circuit board is corroded, and the forming effect of the subsequent nano film on the surface of the metal base material of the circuit board is improved;
step seven: under the vacuum degree, feeding the coating material and plasma gas into a plasma reaction chamber together, and carrying out collision reaction on the coating material and the plasma gas to deposit and form a nano film on the surface of the metal substrate of the circuit board;
step eight: closing the plasma reaction chamber, and taking out the circuit board metal substrate on which the nano film is deposited after the atmospheric pressure of the plasma reaction chamber is restored;
step nine: and packaging the taken out circuit board metal substrate covered with the nano film.
In the first step, the metal substrate of the circuit board is subjected to ultrasonic cleaning by using acetone and alcohol for 20-30min, and after the cleaning by using the acetone and alcohol is finished, the metal substrate of the circuit board is further put into deionized water for secondary ultrasonic cleaning treatment, wherein the cleaning time is 15-30 min;
in the second step, the drying temperature of the drying oven is 60-75 ℃, the humidity in the drying oven is kept at 6-8%, and the drying time is 30-45 min;
the cooling temperature of the cooling box in the third step is 20-25 ℃, the humidity in the drying box is kept at 6-8%, and the cooling time is 40-60 min;
in the fifth step, the low vacuum degree of the plasma reaction chamber is 6-8pa, and the discharge treatment time is 30-35 min;
in the sixth step, the high-erosiveness gas is nitrogen dioxide, and the erosion time is 20-30 min;
the circuit board metal substrate is made of aluminum or alloy materials.
Example one
A method for preparing a nano film on the surface of a plasma chemical vapor deposition substrate comprises the following steps:
the method comprises the following steps: the surface of the metal substrate of the circuit board is cleaned by utilizing acetone and alcohol,
step two: drying the cleaned metal substrate of the circuit board by using a drying box;
step three: placing the dried circuit board metal base material in a cooling box for rapid cooling;
step four: placing the circuit board metal base material cooled in the step two into a plasma reaction chamber,
step five: performing surface discharge treatment by an ion source discharge treatment system in a low-vacuum environment of a plasma reaction chamber to activate the surface of the metal substrate of the circuit board;
step six: further, the mixed gas with high-corrosivity gas is sent into the plasma reaction chamber through the gas guide pipe of the plasma reaction chamber, so that the surface of the metal base material of the circuit board is corroded, and the forming effect of the subsequent nano film on the surface of the metal base material of the circuit board is improved;
step seven: under the vacuum degree, feeding the coating material and plasma gas into a plasma reaction chamber together, and carrying out collision reaction on the coating material and the plasma gas to deposit and form a nano film on the surface of the metal substrate of the circuit board;
step eight: closing the plasma reaction chamber, and taking out the circuit board metal substrate on which the nano film is deposited after the atmospheric pressure of the plasma reaction chamber is restored;
step nine: and packaging the taken out circuit board metal substrate covered with the nano film.
In the first step, the metal substrate of the circuit board is subjected to ultrasonic cleaning by using acetone and alcohol for 20min, and after the cleaning by using the acetone and alcohol is finished, the metal substrate of the circuit board is further put into deionized water for secondary ultrasonic cleaning treatment, wherein the cleaning time is 15 min;
in the second step, the drying temperature of the drying oven is 60 ℃, the humidity in the drying oven is kept at 6%, and the drying time is 30 min;
the cooling temperature of the cooling box in the third step is 20 ℃, the humidity in the drying box is kept at 6%, and the cooling time is 40 min;
in the fifth step, the low vacuum degree of the plasma reaction chamber is 6pa, and the discharge treatment time is 30 min;
in the sixth step, the high-erosiveness gas is nitrogen dioxide, and the erosion time is 20 min;
the circuit board metal substrate is made of aluminum or alloy materials.
Example two
A method for preparing a nano film on the surface of a plasma chemical vapor deposition substrate comprises the following steps:
the method comprises the following steps: the surface of the metal substrate of the circuit board is cleaned by utilizing acetone and alcohol,
step two: drying the cleaned metal substrate of the circuit board by using a drying box;
step three: placing the dried circuit board metal base material in a cooling box for rapid cooling;
step four: placing the circuit board metal base material cooled in the step two into a plasma reaction chamber,
step five: performing surface discharge treatment by an ion source discharge treatment system in a low-vacuum environment of a plasma reaction chamber to activate the surface of the metal substrate of the circuit board;
step six: further, the mixed gas with high-corrosivity gas is sent into the plasma reaction chamber through the gas guide pipe of the plasma reaction chamber, so that the surface of the metal base material of the circuit board is corroded, and the forming effect of the subsequent nano film on the surface of the metal base material of the circuit board is improved;
step seven: under the vacuum degree, feeding the coating material and plasma gas into a plasma reaction chamber together, and carrying out collision reaction on the coating material and the plasma gas to deposit and form a nano film on the surface of the metal substrate of the circuit board;
step eight: closing the plasma reaction chamber, and taking out the circuit board metal substrate on which the nano film is deposited after the atmospheric pressure of the plasma reaction chamber is restored;
step nine: and packaging the taken out circuit board metal substrate covered with the nano film.
In the first step, the metal substrate of the circuit board is subjected to ultrasonic cleaning by using acetone and alcohol for 30min, and after the cleaning by using the acetone and alcohol is finished, the metal substrate of the circuit board is further put into deionized water for secondary ultrasonic cleaning treatment, wherein the cleaning time is 30 min;
in the second step, the drying temperature of the drying oven is 75 ℃, the humidity in the drying oven is kept at 8%, and the drying time is 45 min;
the cooling temperature of the cooling box in the third step is 25 ℃, the humidity in the drying box is kept at 8%, and the cooling time is 60 min;
in the fifth step, the low vacuum degree of the plasma reaction chamber is 8pa, and the discharge treatment time is 35 min;
in the sixth step, the high-erosiveness gas is nitrogen dioxide, and the erosion time is 30 min;
the circuit board metal substrate is made of aluminum or alloy materials.
EXAMPLE III
A method for preparing a nano film on the surface of a plasma chemical vapor deposition substrate comprises the following steps:
the method comprises the following steps: the surface of the metal substrate of the circuit board is cleaned by utilizing acetone and alcohol,
step two: drying the cleaned metal substrate of the circuit board by using a drying box;
step three: placing the dried circuit board metal base material in a cooling box for rapid cooling;
step four: placing the circuit board metal base material cooled in the step two into a plasma reaction chamber,
step five: performing surface discharge treatment by an ion source discharge treatment system in a low-vacuum environment of a plasma reaction chamber to activate the surface of the metal substrate of the circuit board;
step six: further, the mixed gas with high-corrosivity gas is sent into the plasma reaction chamber through the gas guide pipe of the plasma reaction chamber, so that the surface of the metal base material of the circuit board is corroded, and the forming effect of the subsequent nano film on the surface of the metal base material of the circuit board is improved;
step seven: under the vacuum degree, feeding the coating material and plasma gas into a plasma reaction chamber together, and carrying out collision reaction on the coating material and the plasma gas to deposit and form a nano film on the surface of the metal substrate of the circuit board;
step eight: closing the plasma reaction chamber, and taking out the circuit board metal substrate on which the nano film is deposited after the atmospheric pressure of the plasma reaction chamber is restored;
step nine: and packaging the taken out circuit board metal substrate covered with the nano film.
In the first step, the metal substrate of the circuit board is subjected to ultrasonic cleaning by using acetone and alcohol for 25min, and after the cleaning by using the acetone and alcohol is finished, the metal substrate of the circuit board is further put into deionized water for secondary ultrasonic cleaning treatment, wherein the cleaning time is 25 min;
in the second step, the drying temperature of the drying oven is 70 ℃, the humidity in the drying oven is kept at 7%, and the drying time is 40 min;
the cooling temperature of the cooling box in the third step is 22 ℃, the humidity in the drying box is kept at 7%, and the cooling time is 50 min;
in the fifth step, the low vacuum degree of the plasma reaction chamber is 7pa, and the discharge treatment time is 33 min;
in the sixth step, the high-erosiveness gas is nitrogen dioxide, and the erosion time is 25 min;
the circuit board metal substrate is made of aluminum or alloy materials.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that various changes in the embodiments and/or modifications of the invention can be made, and equivalents and modifications of some features of the invention can be made without departing from the spirit and scope of the invention.
Claims (7)
1. A method for preparing a nano film on the surface of a plasma chemical vapor deposition substrate is characterized by comprising the following steps: the preparation method comprises the following steps:
the method comprises the following steps: the surface of the metal substrate of the circuit board is cleaned by utilizing acetone and alcohol,
step two: drying the cleaned metal substrate of the circuit board by using a drying box;
step three: placing the dried circuit board metal base material in a cooling box for rapid cooling;
step four: placing the circuit board metal base material cooled in the step two into a plasma reaction chamber,
step five: performing surface discharge treatment by an ion source discharge treatment system in a low-vacuum environment of a plasma reaction chamber to activate the surface of the metal substrate of the circuit board;
step six: further, the mixed gas with high-corrosivity gas is sent into the plasma reaction chamber through the gas guide pipe of the plasma reaction chamber, so that the surface of the metal base material of the circuit board is corroded, and the forming effect of the subsequent nano film on the surface of the metal base material of the circuit board is improved;
step seven: under the vacuum degree, feeding the coating material and plasma gas into a plasma reaction chamber together, and carrying out collision reaction on the coating material and the plasma gas to deposit and form a nano film on the surface of the metal substrate of the circuit board;
step eight: closing the plasma reaction chamber, and taking out the circuit board metal substrate coated with the nano film after the atmospheric pressure of the plasma reaction chamber is restored;
step nine: and packaging the taken out circuit board metal substrate covered with the nano film.
2. The method for preparing the nano-film on the surface of the plasma chemical vapor deposition substrate according to claim 1, wherein the method comprises the following steps: in the first step, the metal substrate of the circuit board is subjected to ultrasonic cleaning by using acetone and alcohol for 20-30min, and after the cleaning by using the acetone and alcohol is finished, the metal substrate of the circuit board is further put into deionized water for secondary ultrasonic cleaning treatment, wherein the cleaning time is 15-30 min.
3. The method for preparing the nano-film on the surface of the plasma chemical vapor deposition substrate according to claim 1, wherein the method comprises the following steps: and in the second step, the drying temperature of the drying oven is 60-75 ℃, the humidity in the drying oven is kept at 6-8%, and the drying time is 30-45 min.
4. The method for preparing the nano-film on the surface of the plasma chemical vapor deposition substrate according to claim 1, wherein the method comprises the following steps: and in the third step, the cooling temperature of the cooling box is 20-25 ℃, the humidity in the drying box is kept at 6-8%, and the cooling time is 40-60 min.
5. The method for preparing the nano-film on the surface of the plasma chemical vapor deposition substrate according to claim 1, wherein the method comprises the following steps: in the fifth step, the low vacuum degree of the plasma reaction chamber is 6-8pa, and the discharge treatment time is 30-35 min.
6. The method for preparing the nano-film on the surface of the plasma chemical vapor deposition substrate according to claim 1, wherein the method comprises the following steps: in the sixth step, the high-erosiveness gas is nitrogen dioxide, and the erosion time is 20-30 min.
7. The method for preparing the nano-film on the surface of the plasma chemical vapor deposition substrate according to claim 1, wherein the method comprises the following steps: the circuit board metal substrate is made of aluminum or alloy materials.
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Citations (5)
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|---|---|---|---|---|
| EP1340835A2 (en) * | 1996-06-27 | 2003-09-03 | Nissin Electric Co., Ltd. | Object coated with carbon film and method of manufacturing the same |
| CN101298676A (en) * | 2007-04-30 | 2008-11-05 | 汉达精密电子(昆山)有限公司 | Manufacturing method of insulation heat-conducting metal substrate |
| CN101298673A (en) * | 2007-04-30 | 2008-11-05 | 汉达精密电子(昆山)有限公司 | Preparation of insulated heat conducting metal substrate |
| CN108425101A (en) * | 2018-02-13 | 2018-08-21 | 浙江银之源贵金属有限公司 | A kind of objects made from precious metals coating film treatment technique |
| CN110306166A (en) * | 2019-08-15 | 2019-10-08 | 佛山市思博睿科技有限公司 | A kind of preparation method of plasma chemical vapor deposition metallic substrate surface nanometer film |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1340835A2 (en) * | 1996-06-27 | 2003-09-03 | Nissin Electric Co., Ltd. | Object coated with carbon film and method of manufacturing the same |
| CN101298676A (en) * | 2007-04-30 | 2008-11-05 | 汉达精密电子(昆山)有限公司 | Manufacturing method of insulation heat-conducting metal substrate |
| CN101298673A (en) * | 2007-04-30 | 2008-11-05 | 汉达精密电子(昆山)有限公司 | Preparation of insulated heat conducting metal substrate |
| CN108425101A (en) * | 2018-02-13 | 2018-08-21 | 浙江银之源贵金属有限公司 | A kind of objects made from precious metals coating film treatment technique |
| CN110306166A (en) * | 2019-08-15 | 2019-10-08 | 佛山市思博睿科技有限公司 | A kind of preparation method of plasma chemical vapor deposition metallic substrate surface nanometer film |
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Application publication date: 20210122 |