CN112072896B

CN112072896B - Control device and method for power equipment

Info

Publication number: CN112072896B
Application number: CN201910500372.3A
Authority: CN
Inventors: 内藤裕也; 舩仓清一
Original assignee: Sanken Electric Co Ltd
Current assignee: Sanken Electric Co Ltd
Priority date: 2019-06-11
Filing date: 2019-06-11
Publication date: 2024-04-26
Anticipated expiration: 2039-06-11
Also published as: CN112072896A

Abstract

The embodiment of the application provides a control device and a control method of power equipment. The control device includes: an input circuit, a level conversion circuit, a high voltage driving circuit, a temperature detection circuit and a high voltage switching circuit; the high-voltage switching circuit selects at least two grid resistances of the high-voltage side power equipment according to the temperature control signal, so that the switching speed of the high-voltage side power equipment can be switched. Thus, the switching speed of the power equipment can be automatically switched according to the temperature, so that the performance of the power equipment is improved.

Description

Control device and method for power equipment

Technical Field

The embodiment of the application relates to the technical field of semiconductors.

Background

The Power devices (also referred to as Power devices) may include high-side (H/S) Power devices and/or low-side (L/S) Power devices; the control device for controlling the power device may have a high-voltage side drive circuit and/or a low-voltage side drive circuit. The high-voltage side driving circuit may generate a high-voltage driving signal according to the high-voltage input signal, and perform an operation of turning ON (ON, or referred to as ON) or OFF (OFF, or referred to as OFF) the high-voltage side power device; the low-voltage side driving circuit may generate a low-voltage driving signal according to the low-voltage input signal, and perform an ON (ON) or OFF (OFF) operation of the low-voltage side power device.

For example, an input circuit, a level shift (or referred to as a level shift) circuit, a high-voltage drive circuit, and the like may be provided on the high-voltage side. The input circuit may generate a pulse signal, such as a SET signal or a RESET signal, based ON a high voltage input signal, such as indicated by HIN, and the level shifter circuit may generate an ON signal or an OFF signal based ON the SET signal or the RESET signal to drive the high side power device.

It should be noted that the foregoing description of the background art is only for the purpose of providing a clear and complete description of the technical solution of the present application and is presented for the convenience of understanding by those skilled in the art. The above-described solutions are not considered to be known to the person skilled in the art simply because they are set forth in the background of the application section.

Disclosure of Invention

The inventors found that: in some configurations, such as intelligent power modules (IPM, INTELLIGENT POWER MODULE), the Switching (SW) speed of the power device is fixed; if it is desired to change the switching speed of the power device, various products using different gate (gate) resistances need to be developed, resulting in a large management cost.

On the other hand, the current gate resistance is constant regardless of temperature, i.e. a change in temperature does not lead to a change in switching speed. Since the switching speed cannot be intentionally changed according to the temperature, the change in temperature may affect the performance of the power device.

The embodiment of the application provides a control device and a control method of power equipment; it is desirable to be able to automatically switch the switching speed of the power device based on temperature to improve the performance of the power device.

According to a first aspect of an embodiment of the present application, there is provided a control apparatus for a power device, including:

an input circuit which generates a high-voltage on pulse signal and/or a high-voltage off pulse signal according to a high-voltage input signal;

A level conversion circuit that generates a high-voltage on signal for turning on a high-voltage side power device according to the high-voltage on pulse signal and/or generates a high-voltage off signal for turning off the high-voltage side power device according to the high-voltage off pulse signal;

A high-voltage driving circuit that drives the high-voltage side power device according to the high-voltage on signal or the high-voltage off signal;

A temperature detection circuit that detects a temperature of the high-voltage side power device and generates a first temperature control signal that forms a high-voltage selection signal via the level conversion circuit; and

And the high-voltage switching circuit is used for selecting at least two grid resistances of the high-voltage side power device according to the high-voltage selection signal so that the switching speed of the high-voltage side power device can be switched.

According to a second aspect of embodiments of the present application, there is provided a load device comprising at least one set of half-bridge circuits and a control device as described above.

According to a third aspect of the embodiment of the present application, there is provided a control method of a power device, including:

Generating a high-voltage on pulse signal and/or a high-voltage off pulse signal according to the high-voltage input signal;

generating a high-voltage on signal for switching on a high-voltage side power device according to the high-voltage on pulse signal and/or generating a high-voltage off signal for switching off the high-voltage side power device according to the high-voltage off pulse signal;

driving the high-voltage side power equipment according to the high-voltage on signal or the high-voltage off signal;

Detecting a temperature of the high-voltage side power device and generating a first temperature control signal, the first temperature control signal forming a high-voltage selection signal via a level shift circuit; and

And selecting at least two grid resistances of the high-voltage side power equipment according to the high-voltage selection signal so that the switching speed of the high-voltage side power equipment can be switched.

The embodiment of the application has the beneficial effects that: the high-voltage switching circuit selects at least two grid resistances of the high-voltage side power device according to the temperature control signal, so that the switching speed of the high-voltage side power device can be switched. Thus, the switching speed of the power equipment can be automatically switched according to the temperature, so that the performance of the power equipment is improved.

Specific embodiments of the application are disclosed in detail below with reference to the following description and drawings, indicating the manner in which the principles of the application may be employed. It should be understood that the embodiments of the application are not limited in scope thereby. The embodiments of the application include many variations, modifications and equivalents within the spirit and scope of the appended claims.

Features that are described and/or illustrated with respect to one embodiment may be used in the same way or in a similar way in one or more other embodiments in combination with or instead of the features of the other embodiments.

It should be emphasized that the term "comprises/comprising" when used herein is taken to specify the presence of stated features, integers, steps or components but does not preclude the presence or addition of one or more other features, integers, steps or components.

Drawings

Elements and features described in one drawing or one implementation of an embodiment of the application may be combined with elements and features shown in one or more other drawings or implementations. Furthermore, in the drawings, like reference numerals designate corresponding parts throughout the several views, and may be used to designate corresponding parts as used in more than one embodiment.

FIG. 1 is a schematic diagram of a control device for a power plant according to an embodiment of the present application;

FIG. 2 is an exemplary diagram of a switching circuit according to an embodiment of the present application;

FIG. 3 is another exemplary diagram of a switching circuit according to an embodiment of the present application;

FIG. 4 is another exemplary diagram of a switching circuit according to an embodiment of the present application;

FIG. 5 is another schematic diagram of a control apparatus for a power device according to an embodiment of the present application;

FIG. 6 is an exemplary graph of temperature control signals for an embodiment of the present application;

FIG. 7 is a schematic diagram of some of the components of a control device of a power plant in accordance with an embodiment of the present application;

FIG. 8 is a schematic diagram of a first converted signal and a second converted signal according to an embodiment of the present application;

FIG. 9 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application;

FIG. 10 is a timing diagram of signals according to an embodiment of the present application;

FIG. 11 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application;

FIG. 12 is another schematic diagram of the first and second converted signals according to an embodiment of the present application;

FIG. 13 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application;

FIG. 14 is another timing diagram of signals according to an embodiment of the present application;

FIG. 15 is a schematic view of another part of the components of the control apparatus of the power device of the embodiment of the present application;

FIG. 16 is another timing diagram of signals according to an embodiment of the present application;

FIG. 17 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application;

FIG. 18 is another timing diagram of signals according to an embodiment of the present application;

fig. 19 is a schematic diagram of a control method of a power device according to an embodiment of the present application.

Detailed Description

The foregoing and other features of the application will become apparent from the following description, taken in conjunction with the accompanying drawings. In the specification and drawings, there have been specifically disclosed specific embodiments of the application that are indicative of some of the ways in which the principles of the application may be employed, it being understood that the application is not limited to the specific embodiments described, but, on the contrary, the application includes all modifications, variations and equivalents falling within the scope of the appended claims.

In the embodiments of the present application, the terms "first," "second," and the like are used to distinguish between different elements from each other by name, but do not indicate spatial arrangement or time sequence of the elements, and the elements should not be limited by the terms. The term "and/or" includes any and all combinations of one or more of the associated listed terms. The terms "comprises," "comprising," "including," "having," and the like, are intended to reference the presence of stated features, elements, components, or groups of components, but do not preclude the presence or addition of one or more other features, elements, components, or groups of components.

In embodiments of the present application, the singular forms "a," an, "and" the "include plural referents and should be construed broadly to mean" one "or" one type "and not limited to" one "or" another; furthermore, the term "comprising" is to be interpreted as including both the singular and the plural, unless the context clearly dictates otherwise. Furthermore, the term "according to" should be understood as "based at least in part on … …", and the term "based on" should be understood as "based at least in part on … …", unless the context clearly indicates otherwise.

In the embodiment of the present application, it is desirable to be able to automatically switch the switching speed of the power device according to the temperature even for one product. On the other hand, on the low voltage side, there is generally no level shift circuit, so it is easy to transfer a selection signal for selecting the gate resistance; however, on the high voltage side, in order to transfer the selection signal for selecting the gate resistance, an LDMOS different from a laterally diffused metal oxide semiconductor (LDMOS, LATERALLY DIFFUSED METAL OXIDE SEMICONDUCTOR) that normally transfers the SET signal, the RESET signal needs to be used, i.e., an additional LDMOS is required, and thus a circuit area becomes large and a cost increases. The embodiment of the application also expects to be able to automatically switch the switching speed of the power device according to temperature without enlarging the circuit area and without using additional elements.

Example of the first aspect

The embodiment of the application provides a control device of power equipment, which at least controls high-voltage side power equipment.

Fig. 1 is a schematic diagram of a control apparatus of a power device according to an embodiment of the present application, and as shown in fig. 1, a control apparatus 100 includes:

An input circuit 101 that generates at least a high-voltage on pulse signal (hereinafter, referred to as SET) and/or a high-voltage off pulse signal (hereinafter, referred to as RESET) based on a high-voltage input signal;

A level conversion circuit 102 that generates a high-voltage ON signal (hereinafter, referred to as ON) for turning ON the high-voltage side power device 110 based ON the high-voltage ON pulse signal and/or generates a high-voltage OFF signal (hereinafter, referred to as OFF) for turning OFF the high-voltage side power device 110 based ON the high-voltage OFF pulse signal;

A high-voltage driving circuit 103 that drives the high-voltage side power device 110 according to the high-voltage on signal or the high-voltage off signal;

a temperature detection circuit 105 that detects a temperature of the high-voltage side power device 110 and generates a first temperature control signal; the first temperature control signal forms a high voltage selection signal through the level conversion circuit; and

A high voltage switching circuit 104 that selects at least two gate resistances of the high voltage side power device 110 according to the high voltage selection signal so that a switching speed of the high voltage side power device 110 can be switched.

In some embodiments, the high side power device 110 may include Transistor elements such as Metal-oxide semiconductor field effect transistors (MOSFETs), or insulated gate bipolar transistors (IGBTs, insulated Gate Bipolar Transistor), and the like; however, the present application is not limited thereto, and may be other semiconductor devices, for example.

In some embodiments, the high-voltage drive circuit 103 switches the switching speed of the high-side power device 110 by switching the resistance value of the gate resistance of the high-side power device 110. For example, the high-voltage switching circuit 104 may include a switching element (SW) that switches at least two gate resistances of the high-side power device 110 such that a switching speed of the high-side power device 110 is switched.

Fig. 2 is an exemplary diagram of a switching circuit according to an embodiment of the present application, illustrating a high-voltage side as an example. As shown in fig. 2, the high-voltage driving circuit 103 includes a driving circuit Dr1, and the high-voltage switching circuit 104 includes a switching element (SW); in addition, two gate resistances, denoted by Rg1 and Rg2, respectively, are provided at the gate of the high-side power device 110.

For example, the switching element (SW) may be turned ON (ON) by the high voltage selection signal, whereby the gate resistance of the high voltage side power device 110 is determined by the resistance value after Rg1 and Rg2 are connected in parallel; as another example, the switching element (SW) may be turned OFF (OFF) by the high voltage selection signal, whereby the gate resistance of the high voltage side power device 110 is determined by the resistance value of Rg 1. Thereby, the gate resistance of the high-voltage side power device 110 can be switched, and the switching speed of the high-voltage side power device 110 can be switched.

Fig. 3 is another exemplary diagram of a switching circuit according to an embodiment of the present application, and as shown in fig. 3, the high voltage driving circuit 103 includes a driving circuit Dr1, and the high voltage switching circuit 104 includes a switching element (SW); in addition, two gate resistances, denoted by Rg1 and Rg2, respectively, are provided at the gate of the high-side power device 110.

For example, the switching element (SW) may be turned ON (ON) downward by the high voltage selection signal, whereby the gate resistance of the high voltage side power device 110 is determined by the resistance value of Rg 1; as another example, the switching element (SW) may be turned ON (ON) upward by the high voltage selection signal, whereby the gate resistance of the high side power device 110 is determined by the resistance value of Rg 2. Thereby, the gate resistance of the high-voltage side power device 110 can be switched, and the switching speed of the high-voltage side power device 110 can be switched.

The above schematically illustrates that the high-voltage driving circuit operates by a single driving circuit, thereby switching the switching speed of the high-voltage side power device 110; the present application is not limited thereto and the high voltage driving circuit may further include a plurality of driving circuits; the high-voltage driving circuit can select one driving circuit to work or select a plurality of driving circuits to work in parallel, so that the switching speed of the high-voltage side power equipment is switched.

Fig. 4 is another exemplary diagram of a switching circuit according to an embodiment of the present application, and as shown in fig. 4, a high-voltage driving circuit 103 has two driving circuits Dr1 and Dr2, and a high-voltage switching circuit 104 includes one switching element (SW); in addition, two gate resistances, denoted by Rg1 and Rg2, respectively, are provided at the gate of the high-side power device 110.

For example, the switching element (SW) may be turned ON (ON) by a high voltage selection signal, whereby Dr2 and Rg2 are selected to operate in parallel with Dr1 and Rg 1; as another example, the switching element (SW) may be turned OFF (OFF) by a high voltage selection signal, whereby Dr2 and Rg2 are not selected, but are operated only by Dr1 and Rg 1. Thereby, the gate resistance of the high-voltage side power device 110 can be switched, and the switching speed of the high-voltage side power device 110 can be switched.

It should be noted that, the switching circuit of the embodiment of the present application is schematically illustrated by taking two gate resistances as examples in fig. 2 to4, but the present application is not limited thereto. For example, the connection relationship between the respective modules or components may be appropriately adjusted, and other modules or components may be added or some of the modules or components may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the descriptions of fig. 2 to4 described above. Furthermore, the switching circuits of fig. 2 to4 can also be used on the low-voltage side.

In addition, the high voltage switching circuit 104 may be independent of the high voltage driving circuit 103, but the embodiment of the application is not limited thereto, and the high voltage switching circuit 104 may be integrated with the high voltage driving circuit 103, i.e., the high voltage switching circuit 104 is a part of the high voltage driving circuit 103. The temperature detection circuit 105 may be a part of the control device 100, or may be independent of the control device 100, which is not limited in the embodiment of the present application.

The high-voltage side is described above, and the control device of the power apparatus may further include a low-voltage side.

Fig. 5 is another schematic diagram of a control apparatus of a power device according to an embodiment of the present application, and as shown in fig. 5, a control apparatus 500 includes: an input circuit 501, a level shift circuit 502, a high voltage drive circuit 503, and a high voltage switching circuit 504; the components described above may drive the high side power device 510 as described above.

The temperature detection circuit 105 may detect the temperature of the high side power device 510 and generate a first temperature control signal, and may also detect the temperature of the low side power device 520 and generate a second temperature control signal. The first temperature control signal and the second temperature control signal may be the same or different. The first temperature control signal and/or the second temperature control signal are represented by temperature control signals in fig. 5.

As shown in fig. 5, the control device 500 may further include:

A low-voltage driving circuit 505 that drives the low-voltage side power device 520 according to a low-voltage ON signal (ON) or a low-voltage OFF signal (OFF) from the input circuit 501; and

A low voltage switching circuit 506 that selects at least two gate resistances of the low voltage side power device 520 in accordance with a second temperature control signal (represented by a low voltage selection signal in fig. 5) so that the switching speed of the low voltage side power device 520 can be switched.

In some embodiments, the low-voltage switching circuit 506 includes a switching element (SW) that switches at least two gate resistances of the low-side power device 520 such that the switching speed of the low-side power device 520 is switched. The structure of the low-voltage switching circuit 506 may be similar to that of the high-voltage switching circuit 504, for example, refer to fig. 2 to 4, and will not be described herein.

As shown in fig. 5, in a normal case, the input circuit 501 (for example, may include a pulse generator) may generate a high voltage on pulse signal (for example, a SET signal shown in fig. 5) and/or a high voltage off pulse signal (for example, a RESET signal shown in fig. 5) according to a high voltage input signal (for example, HIN1, HIN2, and HIN3 shown in fig. 5); the level shift circuit 502 generates a high voltage ON signal (hereinafter, referred to as an ON signal) and/or a high voltage OFF signal (hereinafter, referred to as an OFF signal) based ON the SET signal or the RESET signal. The high voltage driving circuit 503 generates a high voltage driving signal (hereinafter referred to as HO) to drive the high voltage side power device 510.

As shown in fig. 5, the control apparatus 500 may also control the low-side power device 520. The input circuit 501 may also generate at least a low voltage ON signal (ON) and/or a low voltage OFF signal (OFF) for turning ON or OFF the low side power device 520 based ON low voltage input signals (e.g., LIN1, LIN2, and LIN3 as shown in fig. 5). The low voltage drive circuit 505 generates a low voltage drive signal (hereinafter referred to as LO) to drive the low side power device 520.

It should be noted that fig. 5 above only schematically illustrates an embodiment of the present application, but the present application is not limited thereto. For example, the connection relationship between the respective modules or components may be appropriately adjusted, and other modules or components may be added or some of the modules or components may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the description of fig. 5.

In the prior art, different products are required to be produced according to different grid resistances, so that the number of varieties of integrated circuits is large; by the embodiment of the application, the switching speed of the same product can be switched according to the temperature, so that the variety number of integrated circuits is reduced by at least half, the management cost can be restrained, and the performance of power equipment can be improved.

The structure of the embodiment of the present application is exemplified above, and the temperature control signal and the high voltage selection signal are exemplified below.

FIG. 6 is an exemplary graph of a temperature control signal, such as a voltage of the temperature control signal having a linear relationship with temperature, that changes as the temperature changes, in accordance with an embodiment of the present application; however, the present application is not limited thereto, and the voltage and temperature of the temperature control signal are not necessarily linear.

FIG. 7 is a schematic diagram of some of the components of a control device of a power plant in accordance with an embodiment of the present application; as shown in fig. 7, for example, the control device 100 may further include: the Latch signal generation circuit 700 generates at least one Latch (Latch) signal (or may also be referred to as a Latch signal, a pulse signal, or the like) when the first temperature control signal is input.

In some embodiments, as shown in fig. 7, the latch signal generating circuit 700 includes at least one comparator (fig. 7 illustrates two comparators Comp1 and Comp 2), which compares the voltage of the first temperature control signal with a preset threshold value, and generates at least one latch signal according to the comparison result.

For example, 2 comparators having different thresholds (expressed by Vth) are prepared at the selection terminal, and a decision to add the Latch signal is made. For example, in the case where Vth 1= V, vth 2=4v, when the voltage of the first temperature control signal is less than or equal to 1V, comp1 output L, comp2 outputs L. Comp1 output H, comp outputs L when the voltage of the first temperature control signal is between 1V and 4V, comp1 output H, comp outputs H when the voltage of the first temperature control signal is greater than or equal to 4V.

Therefore, in the case where 2 comparators having different Vth are prepared, 3 levels of LL, HL, and HH described above may be configured, for example, the Latch signal is not output in the case of LL, 1 Latch signal is output in the case of HL, and 2 Latch signals are output in the case of HH.

In some embodiments, the latch signal generation circuit 700 also generates a reset signal that resets the high voltage select signal; the reset signal, the at least one latch signal and the high voltage on pulse signal form a first transition signal via the level shift circuit 102 and/or the reset signal, the at least one latch signal and the high voltage off pulse signal form a second transition signal via the level shift circuit 102.

As shown in fig. 7, taking two Latch signals (Latch 1 and Latch 2) as an example, the RESET signal, the Latch signal, and the high voltage on pulse Signal (SET) form a first transition signal (denoted by SET ') via the level transition circuit 102, and/or the RESET signal, the Latch signal, and the high voltage off pulse signal (RESET) form a second transition signal (denoted by RESET') via the level transition circuit 102.

Fig. 8 is a schematic diagram of a first switching signal and a second switching signal according to an embodiment of the present application, taking two Latch signals as examples, and illustrating a case where a SET signal plus a RESET signal and a Latch signal form a first switching signal SET ', and a RESET signal plus a RESET signal and a Latch signal form a second switching signal RESET'.

In the embodiment of the present application, the latch signal may also be a pulse signal, and the embodiment of the present application does not limit the waveform of the latch signal, and may be any waveform suitable for use. In addition, the latch signal generating circuit 700 may be a part of the input circuit 101, or may be independent of the input circuit 101, which is not limited in the embodiment of the present application.

FIG. 9 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application; as shown in fig. 9, for example, the control device 100 may further include:

A selection signal generating circuit 900 that generates at least one high voltage selection signal based on the first transition signal (denoted by SET ') and/or the second transition signal (denoted by RESET'). The high voltage switching circuit 104 selects at least two gate resistances according to at least one high voltage selection signal to switch the switching speed of the high side power device 110.

In some embodiments, as shown in fig. 9, the selection signal generating circuit 900 includes at least one counter (fig. 9 is an example of two counters 1 and 2), and the counter counts the number of latch signals in the first conversion signal and/or the second conversion signal, and generates at least one high voltage selection signal according to the count result. As shown in fig. 9, the selection signal generation circuit 900 also resets the high voltage selection signal according to the reset signal.

In addition, the selection signal generating circuit 900 may be a part of the high voltage driving circuit 103 or the high voltage switching circuit 104, or may be independent of the high voltage driving circuit 103 or the high voltage switching circuit 104, which is not limited in the embodiment of the present application.

It should be noted that fig. 7 and 9 above are only illustrative of embodiments of the present application, but the present application is not limited thereto. For example, the connection relationship between the respective modules or components may be appropriately adjusted, and other modules or components may be added or some of the modules or components may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the descriptions of fig. 7 and 9 described above.

In addition, as shown in fig. 7 and 9, the latch signal generating circuit 700 and the selection signal generating circuit 900 may further include various elements or components such as a delay circuit, a pulse generating circuit, a signal generator, a reset circuit, a pre-driving circuit, a driving circuit, etc., and the embodiments of the present application will not be described in detail with reference to the related art.

FIG. 10 is a timing diagram of signals according to an embodiment of the present application. As shown in fig. 10, the Latch signal may be generated at a certain time after the falling edge delay of HIN or HO. As shown at A1, the first temperature control signal is, for example, 0V (less than 1V), so that only one reset signal is generated; as shown at B1, the first temperature control signal is, for example, 2.5V (between 1V and 4V), so that one reset signal and one Latch signal can be generated; as shown at C1, the first temperature control signal is, for example, 5V (greater than 4V), so that one reset signal and two Latch signals can be generated.

Accordingly, as shown in fig. 10, a high voltage selection signal 1 and a high voltage selection signal 2 may be generated, and at least three gate resistances may be selected (e.g., one from the three gate resistances), thereby further increasing the switching level of the SW speed.

In some embodiments, the number of at least one latch signal is N, the number of at least one high voltage select signal is N, the number of at least two gate resistors is n+1, and N is a positive integer greater than or equal to 1. In the above description, n=2 is taken as an example, and if n=1, two gate resistances may be selected. The embodiment of the present application is not limited thereto, and may be similarly performed for the case where N is greater than or equal to 3.

In the embodiment of the present application, only two transistors may be provided in the control device 100 to generate the normal ON signal and the normal OFF signal, respectively; and in the case of adding the Latch signal, the level shift circuit 102 outputs a high voltage selection signal. That is, the embodiment of the present application can realize the transfer of the selection signal on the high voltage side to switch the switching speed using, for example, two LDMOS. In addition, the switching level of the switching speed may be 2 or more by the number of Latch signals being different.

Therefore, the switching speed of the power equipment can be automatically switched according to the temperature, so that the management cost is suppressed; and does not require enlarging the circuit area and does not use additional components, thereby not increasing the circuit or chip cost. In addition, the performance of the power device can be improved, and the switching level of the switching speed can be increased.

In the above embodiment, the latch signal generation circuit 700 and the selection signal generation circuit 900 generate the reset signal and the reset signal is output each time irrespective of the first temperature control signal, and at this time, the extraction circuit becomes complicated and the circuit scale slightly increases.

In some embodiments, the high voltage on pulse signal and/or the high voltage off pulse signal is also used to reset the high voltage select signal. For example, by using RESET of the normal signal as a RESET signal of Latch, the circuit scale can be further reduced.

FIG. 11 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application; FIG. 12 is another schematic diagram of the first and second converted signals according to an embodiment of the present application; FIG. 13 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application; FIG. 14 is another timing diagram of signals according to an embodiment of the present application.

As shown at B2 in fig. 12 and 14, a RESET signal, for example, may also be used for RESET. As shown in fig. 11 and 13, the circuit scale can be further reduced. In addition, although both fig. 13 and fig. 9 have RESET circuits, fig. 13 is that RESET is taken out of RESET' and RESET, and the specific structure of fig. 9 is still different; reference may be made to the related art for specific how to extract the signal.

In the above embodiment, in the case where the high voltage on pulse signal and/or the high voltage off pulse signal is generated, the reset signal is generated independently of the first temperature control signal. I.e. reset each time, it is possible to return to the default SW speed even if no temperature change actually occurs.

In some embodiments, in the case where the high voltage on pulse signal and/or the high voltage off pulse signal is generated, the reset signal is generated when the voltage of the first temperature control signal is changed. That is, since it is not necessary to add a Latch reset signal to each pulse signal, the SW speed is switched only when the temperature is changed.

FIG. 15 is a schematic view of another part of the components of the control apparatus of the power device of the embodiment of the present application; FIG. 16 is another timing diagram of signals according to an embodiment of the present application.

As shown at A3 and B3 in fig. 16, for example, the addition of the Latch reset signal is performed only on the first pulse after the temperature change (e.g., as shown at A3 'and B3' in fig. 16), and thereafter, the Latch reset signal is not added in the case where the temperature does not change.

With the above-described circuit configuration, as shown in C3 of fig. 16, the Latch reset signal is added every time in a normal state (for example, the voltage of the temperature control signal is 0V). In actual operation, the gate resistance is not switched, and thus there is no problem. However, in order to prevent the Latch reset signal from being added every time in normal operation, the circuit configuration needs to be further adjusted.

FIG. 17 is a schematic diagram of another part of the components of the control apparatus of the power device of the embodiment of the present application; FIG. 18 is another timing diagram of signals according to an embodiment of the present application.

As shown at B4 of fig. 18, the Latch reset signal is not added every time in normal times (for example, the voltage of the temperature control signal is 0V). For example, as shown at A4 of fig. 18, the Latch reset signal may be added only at the UVLO signal at power-up.

It should be noted that fig. 11 to 18 above only schematically illustrate embodiments of the present application, but the present application is not limited thereto. For example, the connection relationship between the respective modules or components may be appropriately adjusted, and other modules or components may be added or some of the modules or components may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the descriptions of fig. 11 to 18 described above.

In addition, as shown in fig. 15 and 17, various elements or components such as a delay circuit, a pulse generating circuit, a Latch detecting circuit (including a comparator, for example), a Latch circuit, etc. may be further included in the circuit structure, and reference is made to the related art, and detailed description of the embodiments of the present application will not be provided.

As can be seen from the above embodiments, the high-voltage switching circuit selects at least two gate resistances of the high-voltage side power device according to the temperature control signal so that the switching speed of the high-voltage side power device can be switched. Thus, the switching speed of the power equipment can be automatically switched according to the temperature, so that the performance of the power equipment is improved.

Embodiments of the second aspect

An embodiment of the application provides a load device comprising at least one set of half-bridge circuits, and further comprising a control device according to an embodiment of the first aspect. Since the structure and principle of the control device have been described in detail in the above embodiments, the content thereof is included herein and will not be described in detail.

In an embodiment of the present application, the load device may be an Intelligent Power Module (IPM); the half-bridge circuit includes a high-side power device and/or a low-side power device. However, the present application is not limited thereto, and the load device may be any device having a power device and a control circuit thereof.

Embodiments of the third aspect

The embodiment of the present application further provides a control method of a power device, which corresponds to the control device of the power device in the embodiment of the first aspect, and the same contents are not repeated.

Fig. 19 is a schematic diagram of a control method of a power device according to an embodiment of the present application, as shown in fig. 18, where the control method includes:

1901, generating a high-voltage on pulse signal and/or a high-voltage off pulse signal according to a high-voltage input signal;

1902, generating a high-voltage on signal for turning on the high-voltage side power device according to the high-voltage on pulse signal, and/or generating a high-voltage off signal for turning off the high-voltage side power device according to the high-voltage off pulse signal;

1903, driving the high-voltage side power equipment according to the high-voltage on signal or the high-voltage off signal;

1904 detecting a temperature of the high-voltage side power device and generating a first temperature control signal forming a high-voltage selection signal via a level shift circuit; and

1905, Selecting at least two gate resistances of the high-side power device according to the high-voltage selection signal so that a switching speed of the high-side power device can be switched.

It should be noted that fig. 19 above only schematically illustrates an embodiment of the present application, but the present application is not limited thereto. For example, the order of execution among the operations may be appropriately adjusted, and other operations may be added or some of the operations may be reduced. Those skilled in the art can make appropriate modifications in light of the above, and are not limited to the description of fig. 19 described above.

The above apparatus and method of the present application may be implemented by hardware, or may be implemented by hardware in combination with software. The present application relates to a computer readable program which, when executed by a logic means, enables the logic means to carry out the apparatus or constituent means described above, or enables the logic means to carry out the various methods or steps described above. The present application also relates to a storage medium such as a hard disk, a magnetic disk, an optical disk, a DVD, a flash memory, or the like for storing the above program.

The methods/apparatus described in connection with the embodiments of the application may be embodied directly in hardware, in a software module executed by a processor, or in a combination of the two. For example, one or more of the functional blocks shown in the figures and/or one or more combinations of the functional blocks may correspond to individual software modules or individual hardware modules of the computer program flow. These software modules may correspond to the individual steps shown in the figures, respectively. These hardware modules may be implemented, for example, by solidifying the software modules using a Field Programmable Gate Array (FPGA).

A software module may reside in RAM memory, flash memory, ROM memory, EPROM memory, EEPROM memory, registers, hard disk, a removable disk, a CD-ROM, or any other form of storage medium known in the art. A storage medium may be coupled to the processor such that the processor can read information from, and write information to, the storage medium; or the storage medium may be integral to the processor. The processor and the storage medium may reside in an ASIC. The software modules may be stored in the memory of the mobile terminal or in a memory card that is insertable into the mobile terminal. For example, if the apparatus (e.g., mobile terminal) employs a MEGA-SIM card of a relatively large capacity or a flash memory device of a large capacity, the software module may be stored in the MEGA-SIM card or the flash memory device of a large capacity.

One or more of the functional blocks described in the figures and/or one or more combinations of functional blocks may be implemented as a general purpose processor, a Digital Signal Processor (DSP), an Application Specific Integrated Circuit (ASIC), a Field Programmable Gate Array (FPGA) or other programmable logic device, discrete gate or transistor logic, discrete hardware components, or any suitable combination thereof for use in performing the functions described herein. One or more of the functional blocks described with respect to the figures and/or one or more combinations of functional blocks may also be implemented as a combination of computing devices, e.g., a combination of a DSP and a microprocessor, a plurality of microprocessors, one or more microprocessors in conjunction with a DSP communication, or any other such configuration.

While the application has been described in connection with specific embodiments, it will be apparent to those skilled in the art that the description is intended to be illustrative and not limiting in scope. Various modifications and alterations of this application will occur to those skilled in the art in light of the spirit and principles of this application, and such modifications and alterations are also within the scope of this application.

Claims

1. A control device of a power apparatus, characterized in that the control device comprises:

A temperature detection circuit that detects a temperature of the high-voltage side power device and generates a first temperature control signal;

A latch signal generating circuit that generates at least one latch signal when the first temperature control signal is inputted; the at least one latch signal and the high-voltage on pulse signal form a first conversion signal via the level conversion circuit, and/or the at least one latch signal and the high-voltage off pulse signal form a second conversion signal via the level conversion circuit; and

A selection signal generating circuit that generates at least one high-voltage selection signal based on the first conversion signal and/or the second conversion signal;

And a high-voltage switching circuit which selects at least two gate resistances of the high-voltage side power device according to the at least one high-voltage selection signal so that a switching speed of the high-voltage side power device can be switched.

2. The control device according to claim 1, wherein the latch signal generating circuit further generates a reset signal that resets the high voltage selection signal; the reset signal, the at least one latch signal and the high voltage on pulse signal form the first transition signal via the level shift circuit, and/or the reset signal, the at least one latch signal and the high voltage off pulse signal form the second transition signal via the level shift circuit.

3. The control device according to claim 2, characterized in that the reset signal is generated independently of the first temperature control signal in case the high voltage on pulse signal and/or the high voltage off pulse signal is generated.

4. The control device according to claim 2, wherein the reset signal is generated when the voltage of the first temperature control signal changes in a case where the high voltage on pulse signal and/or the high voltage off pulse signal is generated.

5. The control device according to claim 1, characterized in that the high voltage on pulse signal and/or the high voltage off pulse signal is also used for resetting the high voltage selection signal.

6. The control device according to claim 1, wherein the latch signal generating circuit includes at least one comparator that compares a voltage of the first temperature control signal with a preset threshold value and generates the at least one latch signal according to a comparison result.

7. The control device according to claim 1, wherein the selection signal generating circuit includes at least one counter that counts the number of the latch signals in the first switching signal and/or the second switching signal, and generates the at least one high-voltage selection signal according to the count result.

8. The control device of claim 1, wherein the number of the at least one latch signal is N, the number of the at least one high voltage select signal is N, the number of the at least two gate resistors is n+1, and N is a positive integer greater than or equal to 1.

9. The control apparatus according to any one of claims 1 to 8, wherein the temperature detection circuit further detects a temperature of the low-voltage side power device and generates a second temperature control signal; the control device further includes:

a low-voltage driving circuit that drives the low-voltage side power device according to a low-voltage on signal or a low-voltage off signal from the input circuit; and

And a low-voltage switching circuit which selects at least two grid resistances of the low-voltage side power device according to the second temperature control signal so that the switching speed of the low-voltage side power device can be switched.

10. A load device comprising at least one set of half-bridge circuits and a control device according to any one of claims 1 to 9.

11. A control method of a power device, the control method comprising:

detecting the temperature of the high-voltage side power equipment and generating a first temperature control signal;

Generating at least one latch signal in the event that the first temperature control signal is input; the at least one latch signal and the high-voltage on pulse signal form a first conversion signal via a level conversion circuit, and/or the at least one latch signal and the high-voltage off pulse signal form a second conversion signal via the level conversion circuit; and

Generating at least one high voltage selection signal according to the first switching signal and/or the second switching signal;

at least two gate resistances of the high-side power device are selected according to the at least one high-voltage selection signal so that a switching speed of the high-side power device can be switched.