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CN112020476A - 压力传感器 - Google Patents

压力传感器 Download PDF

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Publication number
CN112020476A
CN112020476A CN201880087250.XA CN201880087250A CN112020476A CN 112020476 A CN112020476 A CN 112020476A CN 201880087250 A CN201880087250 A CN 201880087250A CN 112020476 A CN112020476 A CN 112020476A
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China
Prior art keywords
flow channel
pressure sensor
cavity
sensor according
flow
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CN201880087250.XA
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CN112020476B (zh
Inventor
黄贤
阮汤姆·T
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Zhejiang Dunan Artificial Environment Co Ltd
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Dunan Sensing LLC
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Measuring Fluid Pressure (AREA)
  • Micromachines (AREA)

Abstract

一种压力传感器，包括本体，本体的内部形成有腔体(1)，本体的与腔体(1)对应的第一侧的侧壁形成为应变膜(2)，应变膜(2)上设置有压敏电阻(3)；本体的内部形成有第一流道(4)和第二流道(5)，第一流道(4)的一端开设于本体的第二侧的侧壁，第一流道(4)通过第二流道(5)与腔体(1)连通，第二流道(5)的与第一流道(4)连通的一端处形成有用于使来自第一流道(4)的两股流体相互对冲以抵消流体尖峰冲击压力的抵消区域(6)。由此，可在抵消区域(6)处消除流体尖峰冲击压力，通过第二流道(5)两侧的对称流道通路设计，将瞬时流体尖峰压力互为抵消，进而降低快速压力变化的流体对传感器芯片应变膜(2)的瞬时冲击，提升传感器的抗压力冲击能力，可以避免快速压力变化导致的传感器失效。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN201880087250.XA 2018-02-06 2018-02-06 压力传感器 Active CN112020476B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2018/075495 WO2019153130A1 (zh) 2018-02-06 2018-02-06 压力传感器

Publications (2)

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CN112020476A true CN112020476A (zh) 2020-12-01
CN112020476B CN112020476B (zh) 2023-12-05

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CN (1) CN112020476B (zh)
WO (1) WO2019153130A1 (zh)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640854A1 (de) * 1996-10-02 1998-04-09 Klaus Prof Dr Ing Horn Längssteife Kraftaufnehmer mit integrierten hydraulischen Kraft-Druckumformern
US6474170B1 (en) * 1997-12-11 2002-11-05 Nagano Keiki Co., Ltd. Pressure sensor
CN101393045A (zh) * 2007-09-20 2009-03-25 株式会社山武 流量传感器及其制造方法
CN203941192U (zh) * 2013-11-20 2014-11-12 中国工程物理研究院电子工程研究所 一种压电式微加速度传感器
CN105928955A (zh) * 2016-04-29 2016-09-07 华北电力大学（保定） 基于线性拟合的微波湿度传感器内壁水膜厚度的测量方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101550926B (zh) * 2008-03-31 2014-03-12 研能科技股份有限公司 双腔流体输送装置
US9714166B2 (en) * 2014-07-16 2017-07-25 Taiwan Semiconductor Manufacturing Co., Ltd. Thin film structure for hermetic sealing
CN104355284B (zh) * 2014-10-13 2016-06-29 华东光电集成器件研究所 一种mems器件双面对通介质隔离结构及制备方法
US10023461B2 (en) * 2014-10-31 2018-07-17 Stmicroelectronics S.R.L. Microintegrated encapsulated MEMS sensor with mechanical decoupling and manufacturing process thereof
US20170081179A1 (en) * 2015-09-22 2017-03-23 Freescale Semiconductor, Inc. Mems sensor with side port and method of fabricating same

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19640854A1 (de) * 1996-10-02 1998-04-09 Klaus Prof Dr Ing Horn Längssteife Kraftaufnehmer mit integrierten hydraulischen Kraft-Druckumformern
US6474170B1 (en) * 1997-12-11 2002-11-05 Nagano Keiki Co., Ltd. Pressure sensor
CN101393045A (zh) * 2007-09-20 2009-03-25 株式会社山武 流量传感器及其制造方法
CN203941192U (zh) * 2013-11-20 2014-11-12 中国工程物理研究院电子工程研究所 一种压电式微加速度传感器
CN105928955A (zh) * 2016-04-29 2016-09-07 华北电力大学（保定） 基于线性拟合的微波湿度传感器内壁水膜厚度的测量方法

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WO2019153130A1 (zh) 2019-08-15
CN112020476B (zh) 2023-12-05

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