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CN111987037A - A micro device transfer head and its manufacturing method - Google Patents

A micro device transfer head and its manufacturing method Download PDF

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CN111987037A
CN111987037A CN202010743333.9A CN202010743333A CN111987037A CN 111987037 A CN111987037 A CN 111987037A CN 202010743333 A CN202010743333 A CN 202010743333A CN 111987037 A CN111987037 A CN 111987037A
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pdms
photoresist
layer
transfer head
device transfer
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张有为
王俊星
朱充沛
高威
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Nanjing CEC Panda LCD Technology Co Ltd
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Nanjing CEC Panda LCD Technology Co Ltd
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67144Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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    • H01L21/677Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/67703Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142Two-dimensional arrangements, e.g. asymmetric LED layout

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Abstract

本发明提出一种微型器件转移头及其制造方法,涉及微型发光二极管领域,本发明的微型器件转移头包括:衬底基板、位于衬底基板上的粘附层、位于粘附层上且呈阵列排布的多个PDMS柱以及位于相邻PDMS柱之间的光阻柱,其中,PDMS柱的高度大于光阻柱的高度。

Figure 202010743333

The present invention provides a micro device transfer head and a manufacturing method thereof, and relates to the field of micro light emitting diodes. The micro device transfer head of the present invention comprises: a base substrate, an adhesive layer on the base substrate, an adhesive layer on the adhesive layer and a A plurality of PDMS pillars arranged in an array and photoresist pillars located between adjacent PDMS pillars, wherein the height of the PDMS pillars is greater than that of the photoresist pillars.

Figure 202010743333

Description

一种微型器件转移头及其制造方法A micro device transfer head and its manufacturing method

技术领域technical field

本发明属于微型发光二极管领域,具体涉及一种微型器件转移头及其制造方法。The invention belongs to the field of miniature light-emitting diodes, and in particular relates to a miniature device transfer head and a manufacturing method thereof.

背景技术Background technique

Micro LED作为无机发光材料具有发光效率高、寿命长和可靠性高等优点并且被广泛关注,为了制作全彩的显示器需要把红、绿、蓝三种颜色的Micro LED从各自的生长基板上分别进行拾取,然后放置在驱动背板上。对Micro LED进行拾取时需要借助外力,通常使用的外力有静电吸附力、粘性吸附力、磁性吸附力以及真空吸附力等。As an inorganic light-emitting material, Micro LED has the advantages of high luminous efficiency, long life and high reliability, and has been widely concerned. In order to make a full-color display, it is necessary to separate red, green and blue Micro LEDs from their respective growth substrates. Pick up and place on the drive backplane. When picking up Micro LEDs, external forces are required. The external forces usually used include electrostatic adsorption, viscous adsorption, magnetic adsorption, and vacuum adsorption.

当利用粘性吸附力时,可以在转移头上使用粘性的材料如PDMS(polydimethylsiloxane,聚二甲基硅氧烷,一种具有粘性的有机材料,液态时的聚二甲基硅氧烷为一黏稠液体,PDMS是由主剂与硬化剂以一定的质量比混合得到,主剂与硬化剂简称AB剂)。PDMS材料缓冲能力好,无残留,但由于弹性大而且不易做的很薄,进行转移时容易致使Micro LED偏移,且该材料不能直接进行黄光制程,很难对其图案化,所以较难使用PDMS材料作为转移头进行选择性拾取Micro LED。When using the viscous adsorption force, a viscous material such as PDMS (polydimethylsiloxane, polydimethylsiloxane) can be used on the transfer head, a viscous organic material, and the polydimethylsiloxane in liquid state is a viscous Liquid, PDMS is obtained by mixing the main agent and the hardener in a certain mass ratio, the main agent and the hardener are referred to as AB agent). The PDMS material has good buffering ability and no residue, but due to its high elasticity and not easy to make very thin, it is easy to cause the Micro LED to shift during transfer, and the material cannot be directly subjected to the yellow light process, so it is difficult to pattern it, so it is difficult Selective pickup of Micro LEDs using PDMS material as a transfer head.

此外,传统的带胶转移头使用一次后需重新换胶,不利于节约成本。In addition, the traditional adhesive transfer head needs to be replaced after one use, which is not conducive to saving costs.

发明内容SUMMARY OF THE INVENTION

本发明提供一种微型器件转移头及其制造方法,通过在光阻柱之间涂布一层PDMS层,利用等离子体刻蚀降低光阻柱的高度,形成凸起的PDMS柱作为转移头,相邻PDMS柱之间的光阻柱起到固定、防止偏移的作用。The invention provides a micro device transfer head and a manufacturing method thereof. By coating a layer of PDMS layer between photoresist columns, plasma etching is used to reduce the height of the photoresist columns, and a raised PDMS column is formed as the transfer head, The photoresist columns between adjacent PDMS columns play a role of fixing and preventing offset.

本发明的技术方案如下:The technical scheme of the present invention is as follows:

本发明公开了一种微型器件转移头的制造方法,包括以下步骤:The invention discloses a manufacturing method of a micro device transfer head, comprising the following steps:

S1:在暂态基板上涂布一层牺牲层;S1: Coating a sacrificial layer on the transient substrate;

S2:在牺牲层上方涂布一层光阻,对光阻进行图案化形成阵列排布的光阻柱;S2: Coating a layer of photoresist on the sacrificial layer, and patterning the photoresist to form photoresist columns arranged in an array;

S3:在光阻柱上方旋涂一层有机材料PDMS,烘烤后形成PDMS层,PDMS层的高度不小于光阻柱的高度;S3: spin-coat a layer of organic material PDMS on top of the photoresist column, form a PDMS layer after baking, and the height of the PDMS layer is not less than the height of the photoresist column;

S4:先将PDMS层与衬底基板的粘附层贴合,再剥离牺牲层;S4: firstly attach the PDMS layer to the adhesion layer of the base substrate, and then peel off the sacrificial layer;

S5:对光阻柱刻蚀一定的深度,形成高于光阻柱且呈阵列排布的多个PDMS柱。S5: etching the photoresist column to a certain depth to form a plurality of PDMS columns higher than the photoresist column and arranged in an array.

优选地,所述牺牲层的制作材料为UV胶或者热解胶。Preferably, the material for making the sacrificial layer is UV glue or pyrolysis glue.

优选地,步骤S4通过UV照射或加热剥离牺牲层。Preferably, step S4 peels off the sacrificial layer by UV irradiation or heating.

优选地,所述有机材料PDMS由AB剂配比形成。Preferably, the organic material PDMS is formed by proportioning an AB agent.

优选地,步骤S5对光阻柱采用等离子体刻蚀。Preferably, in step S5, plasma etching is used for the photoresist column.

本发明还公开了一种微型器件转移头,由上述的微型器件转移头的制造方法制造,包括:衬底基板、位于衬底基板上的粘附层、位于粘附层上且呈阵列排布的多个PDMS柱以及位于相邻PDMS柱之间的光阻柱,其中,PDMS柱的高度大于光阻柱的高度。The invention also discloses a micro-device transfer head, which is manufactured by the above-mentioned manufacturing method of the micro-device transfer head, comprising: a base substrate, an adhesive layer located on the base substrate, an adhesive layer located on the adhesive layer and arranged in an array A plurality of PDMS pillars and photoresist pillars located between adjacent PDMS pillars, wherein the height of the PDMS pillars is greater than the height of the photoresist pillars.

本发明能够带来以下至少一项有益效果:The present invention can bring at least one of the following beneficial effects:

本发明制作的微型器件转移头在相邻PDMS柱之间具有用于固定的光阻柱,与传统的只有PDMS柱的转移头相比,本发明的微型器件转移头不仅可以防止PDMS柱在吸取微型发光二极管过程中产生偏移,而且可以多次重复利用,节约成本。The micro device transfer head made by the present invention has photoresist columns for fixing between adjacent PDMS columns. Compared with the traditional transfer head with only PDMS columns, the micro device transfer head of the present invention can not only prevent the PDMS column from sucking Miniature light-emitting diodes are offset during the process, and can be reused many times, saving costs.

附图说明Description of drawings

下面将以明确易懂的方式,结合附图说明优选实施方式,对本发明予以进一步说明。The present invention will be further described below by describing preferred embodiments in a clear and easy-to-understand manner with reference to the accompanying drawings.

图1是本发明微型器件转移头的制造方法中步骤S1的示意图;Fig. 1 is the schematic diagram of step S1 in the manufacturing method of the micro-device transfer head of the present invention;

图2是本发明微型器件转移头的制造方法中步骤S2的示意图;Fig. 2 is the schematic diagram of step S2 in the manufacturing method of the micro-device transfer head of the present invention;

图3是本发明微型器件转移头的制造方法中步骤S3的示意图;Fig. 3 is the schematic diagram of step S3 in the manufacturing method of the micro-device transfer head of the present invention;

图4是本发明微型器件转移头的制造方法中步骤S4的示意图;Fig. 4 is the schematic diagram of step S4 in the manufacturing method of the micro-device transfer head of the present invention;

图5是本发明微型器件转移头的制造方法中步骤S5的示意图;Fig. 5 is the schematic diagram of step S5 in the manufacturing method of the micro-device transfer head of the present invention;

图6是本发明微型器件转移头的示意图。Figure 6 is a schematic view of the micro device transfer head of the present invention.

具体实施方式Detailed ways

为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对照附图说明本发明的具体实施方式。显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图,并获得其他的实施方式。In order to more clearly describe the embodiments of the present invention or the technical solutions in the prior art, the specific embodiments of the present invention will be described below with reference to the accompanying drawings. Obviously, the accompanying drawings in the following description are only some embodiments of the present invention. For those of ordinary skill in the art, other drawings can also be obtained from these drawings without creative efforts, and obtain other implementations.

为使图面简洁,各图中只示意性地表示出了与本发明相关的部分,它们并不代表其作为产品的实际结构。另外,以使图面简洁便于理解,在有些图中具有相同结构或功能的部件,仅示意性地绘示了其中的一个,或仅标出了其中的一个。在本文中,“一个”不仅表示“仅此一个”,也可以表示“多于一个”的情形。In order to keep the drawings concise, the drawings only schematically show the parts related to the present invention, and they do not represent its actual structure as a product. In addition, in order to make the drawings concise and easy to understand, in some drawings, only one of the components having the same structure or function is schematically shown, or only one of them is marked. As used herein, "one" not only means "only one", but also "more than one".

下面以具体实施例详细介绍本发明的技术方案。The technical solutions of the present invention are described in detail below with specific embodiments.

本发明提供一种微型器件转移头的制造方法,包括以下步骤:The present invention provides a method for manufacturing a micro-device transfer head, comprising the following steps:

S1:如图1所示,在暂态基板01上涂布一层牺牲层02。S1 : as shown in FIG. 1 , a sacrificial layer 02 is coated on the transient substrate 01 .

在暂态基板01使用之前,一般都需要对其进行清洗,将暂态基板01放入碱性或酸性溶液中浸泡几分钟后再进行清水冲洗,之后分别在丙酮和异丙醇中浸泡几分钟并加以超声辅助清洗。Before the transient substrate 01 is used, it generally needs to be cleaned. The transient substrate 01 is soaked in an alkaline or acidic solution for a few minutes, then rinsed with water, and then soaked in acetone and isopropanol for a few minutes. and ultrasonic-assisted cleaning.

其中,所述牺牲层02在后续制程中还需被剥离,为了便于剥离,牺牲层02的制作材料可以是UV胶或者热解胶。Wherein, the sacrificial layer 02 needs to be peeled off in the subsequent process. In order to facilitate the peeling, the material of the sacrificial layer 02 may be UV glue or pyrolysis glue.

S2:如图2所示,在牺牲层02上方涂布一层光阻,对光阻进行图案化形成阵列排布的光阻柱031。S2: As shown in FIG. 2, a layer of photoresist is coated on the sacrificial layer 02, and the photoresist is patterned to form photoresist columns 031 arranged in an array.

在此步骤中涂布形成一定厚度的光阻,曝光显影后光阻被图案化形成多个光阻柱031。形成的光阻柱031可以作为后续要涂布的有机材料PDMS 04的模板。In this step, a photoresist with a certain thickness is formed by coating, and after exposure and development, the photoresist is patterned to form a plurality of photoresist columns 031 . The formed photoresist column 031 can be used as a template for the organic material PDMS 04 to be coated subsequently.

S3:如图3所示,在光阻柱031上方旋涂一层有机材料PDMS,烘烤后形成PDMS层04,PDMS层04的高度不小于光阻柱031的高度。S3 : as shown in FIG. 3 , spin-coat a layer of organic material PDMS on the photoresist pillar 031 , and bake to form a PDMS layer 04 . The height of the PDMS layer 04 is not less than the height of the photoresist pillar 031 .

在光阻柱031上方涂布有机材料PDMS,所述有机材料PDMS由AB剂配比形成,有机材料PDMS流动性大,经过烘烤后形成的PDMS层04形状固定且具有一定的粘性。The organic material PDMS is coated on the top of the photoresist column 031. The organic material PDMS is formed by the proportion of AB agent. The organic material PDMS has high fluidity, and the PDMS layer 04 formed after baking has a fixed shape and a certain viscosity.

S4:如图4所示,先将PDMS层04与衬底基板05的粘附层051贴合,再剥离牺牲层02。S4 : As shown in FIG. 4 , the PDMS layer 04 is firstly attached to the adhesive layer 051 of the base substrate 05 , and then the sacrificial layer 02 is peeled off.

利用衬底基板05上的粘附层051,将PDMS层04与衬底基板05贴合,之后通过UV照射或加热剥离牺牲层02,暂态基板01和牺牲层02一起被剥离掉,露出PDMS层04和光阻柱031。Using the adhesive layer 051 on the base substrate 05, the PDMS layer 04 is attached to the base substrate 05, and then the sacrificial layer 02 is peeled off by UV irradiation or heating, and the transient substrate 01 and the sacrificial layer 02 are peeled off together, exposing the PDMS Layer 04 and photoresist pillar 031.

S5:如图5所示,对光阻柱031刻蚀一定的深度,形成高于光阻柱031且呈阵列排布的多个PDMS柱041。S5: As shown in FIG. 5, the photoresist column 031 is etched to a certain depth to form a plurality of PDMS columns 041 higher than the photoresist column 031 and arranged in an array.

在利用等离子体刻蚀对光阻柱031进行刻蚀的过程中,其实也会对PDMS层04造成刻蚀,但是PDMS材料的刻蚀率远低于光阻的刻蚀率,最终的刻蚀结果是形成凸起的PDMS柱041。其中,光阻柱031不会被完全刻蚀掉,会保留一定的高度,通过控制等离子体刻蚀的时间来调整光阻柱031刻蚀的深度,最终形成高于光阻柱031且呈阵列排布的多个PDMS柱041,所述PDMS柱041呈凸起状。相邻PDMS柱041之间的光阻柱031用于固定住PDMS柱041防止其在吸取转移微型发光二极管过程中形成偏移。In the process of etching the photoresist column 031 by plasma etching, the PDMS layer 04 is actually etched, but the etching rate of the PDMS material is much lower than that of the photoresist, and the final etching As a result, raised PDMS pillars 041 are formed. Among them, the photoresist column 031 will not be completely etched away, but will retain a certain height. By controlling the plasma etching time to adjust the etching depth of the photoresist column 031, the photoresist column 031 is finally formed higher than the photoresist column 031 and arranged in an array. a plurality of PDMS pillars 041, the PDMS pillars 041 are convex. The photoresist pillars 031 between adjacent PDMS pillars 041 are used to fix the PDMS pillars 041 to prevent the PDMS pillars 041 from being offset during the process of transferring the micro-LEDs.

需要说明的是,本发明对光阻柱031刻蚀进去的深度不做限定,因微型发光二极管在制作过程中均一性会存在差异,导致微型发光二极管的高度会有差异,为了更好地实现转移且不偏移,光阻柱031刻蚀进去的深度需大于等于同一待转移基板上微型发光二极管之间的高度差。It should be noted that the present invention does not limit the etched depth of the photoresist column 031, because there will be differences in the uniformity of the micro light emitting diodes during the manufacturing process, resulting in differences in the height of the micro light emitting diodes. In order to better achieve To transfer and not shift, the depth of the photoresist column 031 to be etched must be greater than or equal to the height difference between the micro LEDs on the same substrate to be transferred.

此外,本发明还公开了一种微型器件转移头,由上述的微型器件转移头的制造方法制造,如图6所示,微型器件转移头包括:衬底基板05、位于衬底基板05上的粘附层051、位于粘附层051上且呈阵列排布的多个PDMS柱041以及位于相邻PDMS柱041之间的光阻柱031,其中,PDMS柱041的高度大于光阻柱031的高度。In addition, the present invention also discloses a micro-device transfer head, which is manufactured by the above-mentioned manufacturing method of the micro-device transfer head. As shown in FIG. 6 , the micro-device transfer head includes: a base substrate 05 , a The adhesive layer 051 , a plurality of PDMS pillars 041 arranged on the adhesive layer 051 and arranged in an array, and photoresist pillars 031 located between adjacent PDMS pillars 041 , wherein the height of the PDMS pillars 041 is greater than that of the photoresist pillars 031 high.

本发明制作的微型器件转移头在相邻PDMS柱之间具有用于固定的光阻柱,与传统的只有PDMS柱的转移头相比,本发明的微型器件转移头不仅可以防止PDMS柱在吸取微型发光二极管过程中产生偏移,而且可以多次重复利用,节约成本。The micro device transfer head made by the present invention has photoresist columns for fixing between adjacent PDMS columns. Compared with the traditional transfer head with only PDMS columns, the micro device transfer head of the present invention can not only prevent the PDMS column from sucking Miniature light-emitting diodes are offset during the process, and can be reused many times, saving costs.

应当说明的是,以上所述仅是本发明的优选实施方式,但是本发明并不限于上述实施方式中的具体细节,应当指出,对于本技术领域的普通技术人员来说,在本发明的技术构思范围内,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,对本发明的技术方案进行多种等同变换,这些改进、润饰和等同变换也应视为本发明的保护范围。It should be noted that the above are only the preferred embodiments of the present invention, but the present invention is not limited to the specific details of the above-mentioned embodiments. Within the scope of the concept, without departing from the principle of the present invention, several improvements and modifications can also be made to carry out various equivalent transformations to the technical solutions of the present invention. These improvements, modifications and equivalent transformations should also be regarded as the protection scope of the present invention. .

Claims (6)

1. A method of fabricating a micro device transfer head, comprising the steps of:
s1: coating a sacrificial layer on the transient substrate;
s2: coating a layer of light resistance on the sacrificial layer, and patterning the light resistance to form light resistance columns arranged in an array;
s3: spin-coating a layer of organic material PDMS on the photoresist column, and baking to form a PDMS layer, wherein the height of the PDMS layer is not less than that of the photoresist column;
s4: firstly, adhering the PDMS layer to the adhesion layer of the substrate base plate, and then stripping the sacrificial layer;
s5: and etching the photoresist column to a certain depth to form a plurality of PDMS columns which are higher than the photoresist column and are arranged in an array.
2. The method of claim 1, wherein the sacrificial layer is made of a UV glue or a thermal release glue.
3. The method of manufacturing a micro device transfer head according to claim 1, wherein the step S4 peels the sacrificial layer by UV irradiation or heating.
4. The micro device transfer head of claim 1, wherein the organic material PDMS is formed from an AB formulation.
5. The method of claim 1, wherein step S5 is performed by plasma etching the photoresist posts.
6. A micro device transfer head manufactured by the method of manufacturing a micro device transfer head of any one of claims 1 to 5, comprising: the device comprises a substrate, an adhesion layer positioned on the substrate, a plurality of PDMS columns positioned on the adhesion layer and arranged in an array manner, and photoresist columns positioned between adjacent PDMS columns, wherein the height of each PDMS column is greater than that of each photoresist column.
CN202010743333.9A 2020-07-29 2020-07-29 A micro device transfer head and its manufacturing method Pending CN111987037A (en)

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