[go: up one dir, main page]

CN100444027C - Method for making inverted trapezoidal structure by micropatterning complementary structure - Google Patents

Method for making inverted trapezoidal structure by micropatterning complementary structure Download PDF

Info

Publication number
CN100444027C
CN100444027C CNB2006100169956A CN200610016995A CN100444027C CN 100444027 C CN100444027 C CN 100444027C CN B2006100169956 A CNB2006100169956 A CN B2006100169956A CN 200610016995 A CN200610016995 A CN 200610016995A CN 100444027 C CN100444027 C CN 100444027C
Authority
CN
China
Prior art keywords
inverted trapezoidal
target substrate
polyvinylpyrrolidone
micropatterning
soft template
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB2006100169956A
Other languages
Chinese (zh)
Other versions
CN1877453A (en
Inventor
韩艳春
邢汝博
于新红
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Changzhou Institute Of Energy Storage Materials & Devices
Original Assignee
Changchun Institute of Applied Chemistry of CAS
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Changchun Institute of Applied Chemistry of CAS filed Critical Changchun Institute of Applied Chemistry of CAS
Priority to CNB2006100169956A priority Critical patent/CN100444027C/en
Publication of CN1877453A publication Critical patent/CN1877453A/en
Application granted granted Critical
Publication of CN100444027C publication Critical patent/CN100444027C/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Electroluminescent Light Sources (AREA)

Abstract

本发明属于互补结构微图案化加工方法。首先利用毛细微模塑在基底表面制作具有正梯形横截面的微结构。以该结构作为支撑,在其表面涂敷另外一层薄膜。然后选用能溶解毛细微模塑制作的微结构,但是不溶解其表面薄膜的溶剂将微结构溶解,并带动其表面的薄膜一起剥落,从而在基底表面留下具有倒梯形横截面的微结构。该结构可以用于有机平板显示中有机半导体层及电极层的分离。与已有技术相比,本发明具有设备和工艺简单,原理上可以制作多种材料的倒梯形结构的特点。The invention belongs to a complementary structure micropattern processing method. Firstly, microstructures with positive trapezoidal cross-sections were fabricated on the substrate surface by capillary micromolding. Using this structure as a support, another layer of thin film is applied on its surface. Then choose a solvent that can dissolve the microstructure produced by capillary micromolding, but not dissolve the surface film to dissolve the microstructure, and drive the film on the surface to peel off together, thereby leaving a microstructure with an inverted trapezoidal cross-section on the surface of the substrate. The structure can be used for the separation of the organic semiconductor layer and the electrode layer in the organic flat panel display. Compared with the prior art, the present invention has the characteristics of simple equipment and process, and can produce inverted trapezoidal structures of various materials in principle.

Description

互补结构微图案化制作倒梯形结构的方法 Method for making inverted trapezoidal structure by micropatterning complementary structure

技术领域technical field

本发明属于一种微图案化加工方法,特别是一种用于有机电致发光矩阵显示的有机发光层及电极分隔器制作的互补结构微图案化制作倒梯形结构的方法。The invention belongs to a micro-patterning processing method, in particular to a method for producing an inverted trapezoidal structure by micro-patterning a complementary structure used for the production of an organic light-emitting layer and an electrode separator for an organic electroluminescent matrix display.

背景技术Background technique

有机发光显示由于柔性、轻型、低能耗、宽视角等特点而成为目前热门的平板显示技术之一。在将有机电致发光二极管应用于平板显示中时,需要将二极管排列成为矩阵形式。矩阵排列的二极管一般采用行电极和列电极垂直交叉的方法规定。在已图案化了行电极的基板上,为了实现列电极的分离,并为了保护有机半导体层的性能,需要选择适用的微图案化方法。Organic light-emitting display has become one of the most popular flat-panel display technologies due to its characteristics of flexibility, light weight, low energy consumption, and wide viewing angle. When applying organic electroluminescent diodes to flat panel displays, it is necessary to arrange the diodes in a matrix form. Diodes arranged in a matrix are generally specified by the method of vertical crossing of row electrodes and column electrodes. On the substrate with patterned row electrodes, in order to realize the separation of the column electrodes and to protect the performance of the organic semiconductor layer, it is necessary to select an applicable micropatterning method.

已有技术一般采用掩模版放置在蒸发源和沉积基板间,然后进行直接蒸镀的方法。该方法工艺简单,可以保护有机发光二极管的性能,但是加工矩阵精度受到掩模版精度和蒸发系统精度的限制。In the prior art, a mask is generally placed between the evaporation source and the deposition substrate, and then direct evaporation is performed. This method has a simple process and can protect the performance of the organic light emitting diode, but the precision of the processing matrix is limited by the precision of the mask plate and the precision of the evaporation system.

也有采用光刻方法制作倒梯形结构(undercut structure),该结构的横截面为倒置的梯形,即上宽下窄的结构,可以在有机半导体层和电极层沉积后作为分隔器,实现有机半导体层及电极层的分离。另外2003年7月4日由Wiley出版社出版的《先进材料》第15卷第1075页报道了韩国LeeHong H.等人的名为“倒梯形三维结构的制作及其在有机发光二极管中的应用”的文章。该文章中采用光刻的倒梯形结构制作硅橡胶的软模板,使用该软模板并采用毛细微模塑的方法,毛细环氧树脂并固化后得到环氧树脂的倒梯形结构并用于有机半导体层和电极层沉积后的分离。由于光刻工艺中存在着光刻设备复杂昂贵、加工过程要求控制环境温度和洁净度、加工步骤复杂等缺点,而以上介绍的毛细微模塑制作的环氧树脂倒梯形结构,虽然与光刻方法相比克服了对昂贵设备和苛刻环境的要求,同时简化了加工步骤,但是环氧树脂的倒梯形结构不能用于剥离工艺。There is also an inverted trapezoidal structure (undercut structure) made by photolithography. The cross section of the structure is an inverted trapezoid, that is, a structure with a wide top and a narrow bottom. It can be used as a separator after the organic semiconductor layer and electrode layer are deposited to realize organic semiconductor layer. and separation of the electrode layer. In addition, on July 4, 2003, "Advanced Materials", Volume 15, page 1075, published by Wiley Press, reported a work by LeeHong H. et al. of Korea entitled "The Fabrication of Inverted Trapezoidal Three-dimensional Structure and Its Application in Organic Light-Emitting Diodes". " article. In this article, the inverted trapezoidal structure of photolithography is used to make a soft template of silicone rubber. Using the soft template and capillary micro-molding method, the epoxy resin is capillary and cured to obtain an inverted trapezoidal structure of epoxy resin and used for organic semiconductor layers. and separation after electrode layer deposition. Due to the disadvantages of complex and expensive lithography equipment, the need to control the ambient temperature and cleanliness, and complex processing steps in the lithography process, the inverted trapezoidal structure of epoxy resin produced by the capillary micromolding described above, although it is different from that of lithography Compared with the method, the requirements for expensive equipment and harsh environment are overcome, and the processing steps are simplified at the same time, but the inverted trapezoidal structure of the epoxy resin cannot be used for the lift-off process.

发明内容Contents of the invention

为了克服以上两种技术的缺点,本发明提供了一种用于有机电致发光矩阵显示的有机发光层和电极分隔器制作的互补结构微图案化制作倒梯形结构的方法,可以实现可溶性有机薄膜的倒梯形结构制作。In order to overcome the shortcomings of the above two technologies, the present invention provides a method for making an inverted trapezoidal structure by micro-patterning an organic light-emitting layer and an electrode separator for an organic electroluminescent matrix display, which can realize a soluble organic film made of inverted trapezoidal structure.

首先采用毛细微模塑的方法,在目标基底表面制作具有正梯形横截面的微结构,然后在其上涂敷另外一层薄膜。然后选用一种溶剂,该溶剂可以溶解毛细微模塑制作的微结构材料,但是对涂敷在其表面的薄膜材料没有作用。在毛细微模塑制作的微结构从基底上溶解时,带动涂敷在其表面的薄膜脱落,在基底表面留下具有倒梯形横截面的微结构。Firstly, a capillary micromolding method is used to fabricate a microstructure with a regular trapezoidal cross-section on the surface of a target substrate, and then coat another layer of film on it. A solvent is then selected that can dissolve the microstructural material produced by capillary micromolding, but has no effect on the film material coated on its surface. When the microstructure produced by capillary micromolding dissolves from the substrate, the film coated on its surface is driven to fall off, leaving a microstructure with an inverted trapezoidal cross section on the surface of the substrate.

实施该方法的具体步骤和条件描述如下:The specific steps and conditions for implementing the method are described as follows:

1)、如图1所示,选择表面图形横截面为正梯形结构的聚二甲基硅氧烷软模板2,将聚二甲基硅氧烷软模板2放置到目标基底1上,聚二甲基硅氧烷软模板2和目标基底1之间形成毛细沟道3。将质量浓度为10-30%的聚乙烯基吡咯烷酮的水溶液加到毛细沟道3端口处,待聚乙烯基吡咯烷酮的水溶液在毛细力的作用下流进毛细沟道3后,将聚二甲基硅氧烷软模板2和目标基底1一起放置在30-80℃干燥箱中使聚乙烯基吡咯烷酮的水溶液干燥。1), as shown in Figure 1, select the polydimethylsiloxane soft template 2 with a positive trapezoidal surface pattern cross section, place the polydimethylsiloxane soft template 2 on the target substrate 1, and polydimethylsiloxane soft template 2 A capillary channel 3 is formed between the methylsiloxane soft template 2 and the target substrate 1 . Add an aqueous solution of polyvinylpyrrolidone with a mass concentration of 10-30% to the port 3 of the capillary channel, and after the aqueous solution of polyvinylpyrrolidone flows into the capillary channel 3 under the action of capillary force, the polydimethylsiloxane The oxane soft template 2 and the target substrate 1 are placed together in a 30-80° C. drying oven to dry the aqueous solution of polyvinylpyrrolidone.

2)、将聚二甲基硅氧烷软模板2从干燥后的目标基底1剥离,在具有聚乙烯基吡咯烷酮4图案的目标基底1上涂敷与聚乙烯基吡咯烷酮微结构的最大高度相当厚度的光刻胶薄膜5,然后将光刻胶薄膜5烘干。2), peel off the polydimethylsiloxane soft template 2 from the dried target substrate 1, and apply a thickness corresponding to the maximum height of the polyvinylpyrrolidone microstructure on the target substrate 1 with the polyvinylpyrrolidone 4 pattern photoresist film 5, and then the photoresist film 5 is dried.

3)、将步骤2)处理后得到的目标基底1放置在水中,聚乙烯基吡咯烷酮4溶解,并带动涂敷在其表面的光刻胶薄膜5剥落。将经过以上处理后的目标基底1干燥,目标基底1上得到光刻胶的倒梯形结构6。3) The target substrate 1 obtained after the treatment in step 2) is placed in water, the polyvinylpyrrolidone 4 is dissolved, and the photoresist film 5 coated on its surface is driven to peel off. The target substrate 1 after the above treatment is dried, and an inverted trapezoidal structure 6 of photoresist is obtained on the target substrate 1 .

本发明的方法所述的目标基板1为玻璃或表面沉积有铟锡氧化物的玻璃。The target substrate 1 described in the method of the present invention is glass or glass with indium tin oxide deposited on its surface.

与光刻技术相比,本发明的方法使用的只需要使用干燥箱和旋涂仪等简单的设备,并且加工过程只需要三步,因此加工工艺更简单。由于加工中采用了纯水作为主要的溶剂,因此可以有效降低对环境的污染。同时以上方法已经加工得到了精度为5微米的图案,高于一般光刻技术加工的倒梯形结构的10微米的精度。与毛细微模塑制作环氧树脂倒梯形结构的技术相比,本发明的方法制作的结构不仅可以用于有机电致发光矩阵显示中的有机层和电极分离,也可用于剥离工艺,因此本发明制作的结构较毛细微模塑制作的环氧树脂倒梯形结构具有更广阔的应用范围。Compared with the photolithography technology, the method of the present invention only needs to use simple equipment such as a drying oven and a spin coater, and the processing process only needs three steps, so the processing technology is simpler. Since pure water is used as the main solvent in the processing, the pollution to the environment can be effectively reduced. At the same time, the above method has processed a pattern with a precision of 5 microns, which is higher than the precision of 10 microns of the inverted trapezoidal structure processed by general photolithography technology. Compared with the technology of capillary micromolding to make epoxy resin inverted trapezoidal structure, the structure made by the method of the present invention can not only be used for the separation of organic layer and electrode in organic electroluminescent matrix display, but also can be used for stripping process, so the present invention Compared with the inverted trapezoidal structure of epoxy resin produced by capillary micromolding, the structure produced by the invention has a wider application range.

附图说明Description of drawings

图1互补结构微图案化制作倒梯形结构的方法的过程示意图。FIG. 1 is a schematic diagram of the process of manufacturing an inverted trapezoidal structure by micropatterning complementary structures.

图1的A为聚二甲基硅氧烷软模板2和目标基底1组成毛细沟道3的示意图。A of FIG. 1 is a schematic diagram of a polydimethylsiloxane soft template 2 and a target substrate 1 forming a capillary channel 3 .

图1的B为聚二甲基硅氧烷软模板2和目标基底1组成毛细沟道3并填充聚乙烯吡咯烷酮4的示意图。B of FIG. 1 is a schematic diagram of a polydimethylsiloxane soft template 2 and a target substrate 1 forming a capillary channel 3 and filling it with polyvinylpyrrolidone 4 .

图1的C为在聚乙烯基吡咯烷酮4表面涂敷光刻胶薄膜5后的示意图。C in FIG. 1 is a schematic diagram after coating a photoresist film 5 on the surface of polyvinylpyrrolidone 4 .

图1的D为最终得到的光刻胶的倒梯形结构6的示意图。D of FIG. 1 is a schematic diagram of the finally obtained inverted trapezoidal structure 6 of the photoresist.

图1中,1-基底,2-聚二甲基硅氧烷软模板,3-毛细沟道,4-聚乙烯基吡咯烷酮,5-光刻胶薄膜,6-光刻胶的倒梯形结构。In Fig. 1, 1-substrate, 2-polydimethylsiloxane soft template, 3-capillary channel, 4-polyvinylpyrrolidone, 5-photoresist film, 6-photoresist inverted ladder structure.

图2互补结构微图案化制作倒梯形结构的方法制作的光刻胶的倒梯形结构6的扫描电子显微镜照片。Fig. 2 is a scanning electron micrograph of the inverted trapezoidal structure 6 of the photoresist produced by the method of forming the inverted trapezoidal structure by micropatterning the complementary structure.

具体实施方式Detailed ways

实施例1Example 1

1)、选择表面图形横截面为正梯形结构的聚二甲基硅氧烷软模板2,将聚二甲基硅氧烷软模板2放置到玻璃基底1上,聚二甲基硅氧烷软模板2和玻璃基底1间形成毛细沟道3。将浓度为10%重量含量的聚乙烯基吡咯烷酮水溶液加到毛细沟道3端口处,待聚乙烯基吡咯烷酮水溶液在毛细力的作用下流进毛细沟道3后,将聚二甲基硅氧烷软模板2和玻璃基底1一起放置在30摄氏度的干燥箱中使聚乙烯基吡咯烷酮水溶液干燥。1) Select a polydimethylsiloxane soft template 2 with a positive trapezoidal surface cross-section, place the polydimethylsiloxane soft template 2 on the glass substrate 1, and place the polydimethylsiloxane soft template 2 on the glass substrate 1. A capillary channel 3 is formed between the template 2 and the glass substrate 1 . Add an aqueous solution of polyvinylpyrrolidone with a concentration of 10% by weight to the capillary channel 3, and after the aqueous solution of polyvinylpyrrolidone flows into the capillary channel 3 under the action of capillary force, soften the polydimethylsiloxane The template 2 and the glass substrate 1 were placed together in a drying oven at 30 degrees Celsius to dry the polyvinylpyrrolidone aqueous solution.

2)、将聚二甲基硅氧烷软模板2从干燥后的玻璃基底1剥离,在具有聚乙烯基吡咯烷酮4图案的玻璃基底1上涂敷光刻胶薄膜5,然后将光刻胶薄膜5烘干。2), peel off the polydimethylsiloxane soft template 2 from the dried glass substrate 1, coat a photoresist film 5 on the glass substrate 1 with polyvinylpyrrolidone 4 patterns, and then apply the photoresist film 5 drying.

3)、将以上处理的玻璃基底1放置在水中,聚乙烯基吡咯烷酮4溶解,并带动涂敷在其表面的光刻胶薄膜5剥落。将经过以上处理后的玻璃基底1干燥得到光刻胶图形的倒梯形结构6。3) Place the above-treated glass substrate 1 in water, the polyvinylpyrrolidone 4 dissolves, and drives the photoresist film 5 coated on its surface to peel off. The above-treated glass substrate 1 is dried to obtain an inverted trapezoidal structure 6 of the photoresist pattern.

实施例2Example 2

1)、选择表面图形横截面为正梯形结构的聚二甲基硅氧烷软模板2,将聚二甲基硅氧烷软模板2放置到表面沉积有铟锡氧化物的玻璃基底(以下简称“ITO玻璃基底”)1上,聚二甲基硅氧烷软模板2和ITO玻璃基底1间形成毛细沟道3。将浓度为20%重量含量的聚乙烯基吡咯烷酮水溶液加到毛细沟道3端口处,待聚乙烯基吡咯烷酮水溶液在毛细力的作用下流进毛细沟道3后,将聚二甲基硅氧烷软模板2和ITO玻璃基底1一起放置在50摄氏度的干燥箱中使聚乙烯基吡咯烷酮水溶液干燥。1), select the polydimethylsiloxane soft template 2 whose surface pattern cross-section is a regular trapezoidal structure, and place the polydimethylsiloxane soft template 2 on the glass substrate with indium tin oxide deposited on the surface (hereinafter referred to as On the "ITO glass substrate") 1 , a capillary channel 3 is formed between the polydimethylsiloxane soft template 2 and the ITO glass substrate 1 . Add an aqueous solution of polyvinylpyrrolidone with a concentration of 20% by weight to the capillary channel 3, and after the aqueous solution of polyvinylpyrrolidone flows into the capillary channel 3 under the action of capillary force, soften the polydimethylsiloxane The template 2 and the ITO glass substrate 1 were placed together in a drying oven at 50 degrees Celsius to dry the polyvinylpyrrolidone aqueous solution.

2)、将聚二甲基硅氧烷软模板2从干燥后的ITO玻璃基底1剥离,在具有聚乙烯基吡咯烷酮4图案的ITO玻璃基底1上涂敷光刻胶薄膜5,然后将光刻胶薄膜5烘干。2), the polydimethylsiloxane soft template 2 is peeled off from the dried ITO glass substrate 1, and a photoresist film 5 is coated on the ITO glass substrate 1 with polyvinylpyrrolidone 4 patterns, and then photoetched Adhesive film 5 is dried.

3)、将以上处理的ITO玻璃基底1放置在水中,聚乙烯基吡咯烷酮4溶解,并带动涂敷在其表面的光刻胶薄膜5剥落。将经过以上处理后的ITO玻璃基底1干燥得到光刻胶图形的倒梯形结构6。3) Place the above-treated ITO glass substrate 1 in water, the polyvinylpyrrolidone 4 dissolves, and drives the photoresist film 5 coated on its surface to peel off. The ITO glass substrate 1 after the above treatment is dried to obtain the inverted trapezoidal structure 6 of the photoresist pattern.

实施例3Example 3

1)选择表面图形横截面为正梯形结构的聚二甲基硅氧烷软模板2,将聚二甲基硅氧烷软模板2放置到玻璃基底1上,聚二甲基硅氧烷软模板2和玻璃基底1间形成毛细沟道3。将浓度为30%重量含量的聚乙烯基吡咯烷酮水溶液加到毛细沟道3端口处,待聚乙烯基吡咯烷酮水溶液在毛细力的作用下流进毛细沟道3后,将聚二甲基硅氧烷软模板2和玻璃基底1一起放置在80摄氏度的干燥箱中使聚乙烯基吡咯烷酮水溶液干燥。1) Select the polydimethylsiloxane soft template 2 whose surface pattern cross-section is a regular trapezoidal structure, place the polydimethylsiloxane soft template 2 on the glass substrate 1, and the polydimethylsiloxane soft template 2 and the glass substrate 1 form a capillary channel 3 . Add an aqueous solution of polyvinylpyrrolidone with a concentration of 30% by weight to the end of the capillary channel 3, and after the aqueous solution of polyvinylpyrrolidone flows into the capillary channel 3 under the action of capillary force, soften the polydimethylsiloxane The template 2 and the glass substrate 1 were placed together in a drying oven at 80 degrees Celsius to dry the polyvinylpyrrolidone aqueous solution.

2)将聚二甲基硅氧烷软模板2从干燥后的玻璃基底1剥离,在具有聚乙烯基吡咯烷酮4图案的玻璃基底1上涂敷光刻胶薄膜5,然后将光刻胶薄膜5烘干。2) Peel off the polydimethylsiloxane soft template 2 from the dried glass substrate 1, apply a photoresist film 5 on the glass substrate 1 with polyvinylpyrrolidone 4 patterns, and then apply the photoresist film 5 drying.

3)将以上处理的玻璃基底1放置在水中,聚乙烯基吡咯烷酮4溶解,并带动涂敷在其表面的光刻胶薄膜5剥落。将经过以上处理后的玻璃基底1干燥得到光刻胶图形的倒梯形结构6。3) Place the above-treated glass substrate 1 in water, the polyvinylpyrrolidone 4 dissolves, and drives the photoresist film 5 coated on its surface to peel off. The above-treated glass substrate 1 is dried to obtain an inverted trapezoidal structure 6 of the photoresist pattern.

Claims (8)

1、互补结构微图案化制作倒梯形结构的方法,其特征在于,步骤和条件如下:1. A method for making an inverted trapezoidal structure by micro-patterning complementary structures, characterized in that the steps and conditions are as follows: 1)、选择表面图形横截面为正梯形结构的聚二甲基硅氧烷软模板(2),将聚二甲基硅氧烷软模板(2)放置到目标基底(1)上,聚二甲基硅氧烷软模板(2)和目标基底(1)之间形成毛细沟道(3),将质量浓度为10-30%的聚乙烯基吡咯烷酮的水溶液加到毛细沟道(3)端口处,待聚乙烯基吡咯烷酮的水溶液在毛细力的作用下流进毛细沟道(3)后,将聚二甲基硅氧烷软模板(2)和目标基底(1)一起放置在30-80℃干燥箱中使聚乙烯基吡咯烷酮的水溶液干燥;1), select the polydimethylsiloxane soft template (2) whose surface pattern cross-section is a regular trapezoidal structure, place the polydimethylsiloxane soft template (2) on the target substrate (1), polydimethylsiloxane A capillary channel (3) is formed between the methylsiloxane soft template (2) and the target substrate (1), and an aqueous solution of polyvinylpyrrolidone with a mass concentration of 10-30% is added to the port of the capillary channel (3) place, after the aqueous solution of polyvinylpyrrolidone flows into the capillary channel (3) under the action of capillary force, place the polydimethylsiloxane soft template (2) and the target substrate (1) together at 30-80°C The aqueous solution of polyvinylpyrrolidone is dried in the dry box; 2)、将聚二甲基硅氧烷软模板(2)从干燥后的目标基底(1)剥离,在具有聚乙烯基吡咯烷酮(4)图案的目标基底(1)上涂敷与聚乙烯基吡咯烷酮微结构的最大高度相当厚度的光刻胶薄膜(5),然后将光刻胶薄膜(5)烘干;2) Peel off the polydimethylsiloxane soft template (2) from the dried target substrate (1), and coat the polyvinylpyrrolidone (4) patterned target substrate (1) with polyvinyl pyrrolidone The maximum height of the pyrrolidone microstructure corresponds to the thickness of the photoresist film (5), and then the photoresist film (5) is dried; 3)、将步骤2)处理后得到的目标基底(1)放置在水中,聚乙烯基吡咯烷酮(4)溶解,并带动涂敷在其表面的光刻胶薄膜(5)剥落,将经过以上处理后的目标基底(1)干燥,目标基底(1)上得到光刻胶的倒梯形结构(6)。3), place the target substrate (1) obtained after step 2) in water, polyvinylpyrrolidone (4) dissolves, and drives the photoresist film (5) coated on its surface to peel off, and after the above treatment After the target substrate (1) is dried, an inverted trapezoidal structure (6) of photoresist is obtained on the target substrate (1). 2、如权利要求1所述的互补结构微图案化制作倒梯形结构的方法,其特征在于所述目标基底(1)为表面沉积有铟锡氧化物的玻璃。2. The method for fabricating an inverted trapezoidal structure by micropatterning complementary structures according to claim 1, characterized in that the target substrate (1) is glass with indium tin oxide deposited on its surface. 3、如权利要求1所述的互补结构微图案化制作倒梯形结构的方法,其特征在于所述水溶液中聚乙烯基吡咯烷酮质量浓度为10%。3. The method for fabricating inverted trapezoidal structures by micropatterning complementary structures as claimed in claim 1, characterized in that the mass concentration of polyvinylpyrrolidone in the aqueous solution is 10%. 4、如权利要求1所述的互补结构微图案化制作倒梯形结构的方法,其特征在于所述水溶液中聚乙烯基吡咯烷酮质量浓度为20%。4. The method for fabricating inverted trapezoidal structures by micropatterning complementary structures as claimed in claim 1, characterized in that the mass concentration of polyvinylpyrrolidone in the aqueous solution is 20%. 5、如权利要求1所述的互补结构微图案化制作倒梯形结构的方法,其特征在于所述水溶液中聚乙烯基吡咯烷酮质量浓度为30%。5. The method for producing inverted trapezoidal structures by micropatterning complementary structures as claimed in claim 1, characterized in that the mass concentration of polyvinylpyrrolidone in the aqueous solution is 30%. 6、如权利要求1所述的互补结构微图案化制作倒梯形结构的方法,其特征在于所述软模板和目标基底(1)干燥的温度为30摄氏度。6. The method for fabricating an inverted trapezoidal structure by micropatterning complementary structures as claimed in claim 1, characterized in that the drying temperature of the soft template and the target substrate (1) is 30 degrees Celsius. 7、如权利要求1所述的互补结构微图案化制作倒梯形结构的方法,其特征在于所述软模板和目标基底(1)干燥的温度为50摄氏度。7. The method for fabricating an inverted trapezoidal structure by micropatterning complementary structures according to claim 1, characterized in that the soft template and the target substrate (1) are dried at a temperature of 50 degrees Celsius. 8、如权利要求1所述的互补结构微图案化制作倒梯形结构的方法,其特征在于所述软模板和目标基底(1)干燥的温度为80摄氏度。8. The method for fabricating an inverted trapezoidal structure by micropatterning complementary structures as claimed in claim 1, characterized in that the drying temperature of the soft template and the target substrate (1) is 80 degrees Celsius.
CNB2006100169956A 2006-07-07 2006-07-07 Method for making inverted trapezoidal structure by micropatterning complementary structure Expired - Fee Related CN100444027C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB2006100169956A CN100444027C (en) 2006-07-07 2006-07-07 Method for making inverted trapezoidal structure by micropatterning complementary structure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB2006100169956A CN100444027C (en) 2006-07-07 2006-07-07 Method for making inverted trapezoidal structure by micropatterning complementary structure

Publications (2)

Publication Number Publication Date
CN1877453A CN1877453A (en) 2006-12-13
CN100444027C true CN100444027C (en) 2008-12-17

Family

ID=37509922

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB2006100169956A Expired - Fee Related CN100444027C (en) 2006-07-07 2006-07-07 Method for making inverted trapezoidal structure by micropatterning complementary structure

Country Status (1)

Country Link
CN (1) CN100444027C (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105990129B (en) * 2015-02-02 2019-07-02 中芯国际集成电路制造(上海)有限公司 Semiconductor devices and forming method thereof
CN104659286B (en) * 2015-02-06 2017-04-05 中国科学院长春应用化学研究所 The preparation method of patterning organic film
CN107240544B (en) * 2017-05-04 2019-10-15 中国科学院宁波材料技术与工程研究所 A method for preparing patterned thin film, thin film transistor and memristor
CN107093681B (en) * 2017-05-04 2019-05-03 京东方科技集团股份有限公司 A kind of pixel defining layer preparation method, pixel defining layer and display panel
CN107703718A (en) * 2017-09-27 2018-02-16 中国科学院长春光学精密机械与物理研究所 The preparation method of inverted trapezoidal section photoresist mask in a kind of large-area glass substrate
CN109698275A (en) * 2017-10-23 2019-04-30 北京赛特超润界面科技有限公司 A kind of preparation method of small organic molecule crystal pattern array

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
CN1397432A (en) * 2002-08-28 2003-02-19 中国科学院长春应用化学研究所 Thermal moulding method for making pattern on high-molecular film
US20030134129A1 (en) * 2001-10-11 2003-07-17 Lammertink Rob G.H. Devices utilizing self-assembled gel and method of manufacture
US20050061773A1 (en) * 2003-08-21 2005-03-24 Byung-Jin Choi Capillary imprinting technique
US7066971B1 (en) * 1999-11-23 2006-06-27 Sion Power Corporation Methods of preparing electrochemical cells

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5710057A (en) * 1996-07-12 1998-01-20 Kenney; Donald M. SOI fabrication method
US7066971B1 (en) * 1999-11-23 2006-06-27 Sion Power Corporation Methods of preparing electrochemical cells
US20030134129A1 (en) * 2001-10-11 2003-07-17 Lammertink Rob G.H. Devices utilizing self-assembled gel and method of manufacture
CN1397432A (en) * 2002-08-28 2003-02-19 中国科学院长春应用化学研究所 Thermal moulding method for making pattern on high-molecular film
US20050061773A1 (en) * 2003-08-21 2005-03-24 Byung-Jin Choi Capillary imprinting technique

Also Published As

Publication number Publication date
CN1877453A (en) 2006-12-13

Similar Documents

Publication Publication Date Title
CN100444027C (en) Method for making inverted trapezoidal structure by micropatterning complementary structure
US20170214000A1 (en) Organic Light-Emitting Diode (OLED) Device, Manufacturing Method Thereof and Display Device
CN105679799B (en) A kind of large scale AMOLED display base plates and preparation method thereof
TWI542478B (en) Printed matter, method for manufacturing the same, substrate for using the method, ink composition for using the method, display substrate for comprising the printed matter, and electronic device for including the display substrate
TW201622205A (en) Method of manufacturing member having concave-convex pattern
CN106129088B (en) A kind of display panel and preparation method, display device
CN108987449B (en) Pixel defining layer, manufacturing method thereof and display substrate
CN107221554B (en) A kind of OLED device and manufacturing method
CN105024018A (en) Flexible display and manufacturing method thereof
CN102509770A (en) Mother board structure of light emitting device, light emitting device and manufacturing method thereof
CN106784402A (en) A kind of preparation of non-lithographic pixel bank and its typographical display application process
CN107565063A (en) The preparation method of OLED backboards and the preparation method of oled panel
CN104979495B (en) The manufacture method of mask plate
CN107574408A (en) A kind of high polymer mask version and preparation method thereof and application
CN103332031A (en) Printing plate, scattering film layer, display device, and production methods of printing plate and scattering film layer
WO2018090647A1 (en) Method for manufacturing display substrate
CN102800818A (en) Method and structure for improving light emitting rate of bottom-emission organic electroluminescent device
CN108010954B (en) Display substrate and preparation method thereof, display panel
CN1862329A (en) Fabricating method of flexible display
KR101291727B1 (en) Method for manufacturing implint resin and implinting method
WO2020216237A1 (en) Array substrate and fabrication method therefor, display panel and display device
CN106784399B (en) Bearing substrate and preparation method thereof when making OLED for carrying OLED
CN102305960A (en) Process for preparing electric field induced convex interface two-dimensional photonic crystal
CN104821328B (en) Organic electroluminescence device and preparation method thereof
CN104795433B (en) Display panel, manufacturing method thereof, and display device

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
ASS Succession or assignment of patent right

Owner name: CHANGZHOU INSTITUTE OF ENERGY STORAGE MATERIALS +

Free format text: FORMER OWNER: CHANGCHUN INSTITUTE OF APPLIED CHEMISTRY HINESE ACADEMY OF SCIENCES

Effective date: 20121231

C41 Transfer of patent application or patent right or utility model
COR Change of bibliographic data

Free format text: CORRECT: ADDRESS; FROM: 130022 CHANGCHUN, JILIN PROVINCE TO: 213000 CHANGZHOU, JIANGSU PROVINCE

TR01 Transfer of patent right

Effective date of registration: 20121231

Address after: Changzhou City, Jiangsu province Hehai road 213000 No. 9

Patentee after: Changzhou Institute of Energy Storage Materials & Devices

Address before: 130022 Changchun people's street, Jilin, No. 5625

Patentee before: Changchun Institue of Applied Chemistry, Chinese Academy of Sciences

CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20081217

Termination date: 20170707