CN111903022A - 一种半导体激光装置及其制造方法和设备 - Google Patents
一种半导体激光装置及其制造方法和设备 Download PDFInfo
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- CN111903022A CN111903022A CN201980022251.0A CN201980022251A CN111903022A CN 111903022 A CN111903022 A CN 111903022A CN 201980022251 A CN201980022251 A CN 201980022251A CN 111903022 A CN111903022 A CN 111903022A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
一种半导体激光装置及其制造方法和设备。半导体激光装置包括：第一激光器和第二激光器，所述第一激光器和所述第二激光器依附于同一个衬底层；所述第一激光器的n电极和所述第二激光器的n电极之间是相互独立的，且所述第一激光器的p电极和所述第二激光器的p电极之间是相互独立的；第一信号添加到所述第一激光器的电极时，所述第一激光器内产生的电流形成第一电流通道，第二信号添加到所述第二激光器的电极时，所述第二激光器内产生的电流形成第二电流通道，所述第一信号对所述第一激光器的调制和所述第二信号对所述第二激光器的调制是相互独立的；所述第二激光器包括盖层，所述盖层用于实现所述第一电流通道和所述第二电流通道之间的相互隔离。
Description
PCT国内申请，说明书已公开。
Claims (20)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2019/074207 WO2020155029A1 (zh) | 2019-01-31 | 2019-01-31 | 一种半导体激光装置及其制造方法和设备 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111903022A true CN111903022A (zh) | 2020-11-06 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201980022251.0A Pending CN111903022A (zh) | 2019-01-31 | 2019-01-31 | 一种半导体激光装置及其制造方法和设备 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN111903022A (zh) |
| WO (1) | WO2020155029A1 (zh) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282220B1 (en) * | 1998-01-07 | 2001-08-28 | Xerox Corporation | Red, infrared, and blue stacked laser diode array by water fusion |
| JP2002118331A (ja) * | 2000-10-06 | 2002-04-19 | Toshiba Corp | 集積型半導体発光装置及びその製造方法 |
| JP2003347654A (ja) * | 2002-05-27 | 2003-12-05 | Sanyo Electric Co Ltd | 光半導体素子構造 |
| CN1571175A (zh) * | 2003-07-16 | 2005-01-26 | 璨圆光电股份有限公司 | 选择性成长的发光二极管结构 |
| CN1677781A (zh) * | 2004-03-30 | 2005-10-05 | 三洋电机株式会社 | 半导体激光装置 |
| CN1744398A (zh) * | 2004-08-31 | 2006-03-08 | 三洋电机株式会社 | 半导体激光装置及其制造方法 |
| US20100034234A1 (en) * | 2008-08-05 | 2010-02-11 | Sanyo Electric Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
| CN102709813A (zh) * | 2012-05-25 | 2012-10-03 | 中国科学院长春光学精密机械与物理研究所 | 一种单片垂直集成多波长半导体激光器及其制造方法 |
| CN103633561A (zh) * | 2012-08-23 | 2014-03-12 | 佳能株式会社 | 可变波长表面发射激光器 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108155561A (zh) * | 2018-01-22 | 2018-06-12 | 长春理工大学 | 一次外延生长双波长半导体激光器 |
-
2019
- 2019-01-31 WO PCT/CN2019/074207 patent/WO2020155029A1/zh active Application Filing
- 2019-01-31 CN CN201980022251.0A patent/CN111903022A/zh active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6282220B1 (en) * | 1998-01-07 | 2001-08-28 | Xerox Corporation | Red, infrared, and blue stacked laser diode array by water fusion |
| JP2002118331A (ja) * | 2000-10-06 | 2002-04-19 | Toshiba Corp | 集積型半導体発光装置及びその製造方法 |
| JP2003347654A (ja) * | 2002-05-27 | 2003-12-05 | Sanyo Electric Co Ltd | 光半導体素子構造 |
| CN1571175A (zh) * | 2003-07-16 | 2005-01-26 | 璨圆光电股份有限公司 | 选择性成长的发光二极管结构 |
| CN1677781A (zh) * | 2004-03-30 | 2005-10-05 | 三洋电机株式会社 | 半导体激光装置 |
| CN1744398A (zh) * | 2004-08-31 | 2006-03-08 | 三洋电机株式会社 | 半导体激光装置及其制造方法 |
| US20100034234A1 (en) * | 2008-08-05 | 2010-02-11 | Sanyo Electric Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
| CN102709813A (zh) * | 2012-05-25 | 2012-10-03 | 中国科学院长春光学精密机械与物理研究所 | 一种单片垂直集成多波长半导体激光器及其制造方法 |
| CN103633561A (zh) * | 2012-08-23 | 2014-03-12 | 佳能株式会社 | 可变波长表面发射激光器 |
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| Publication number | Publication date |
|---|---|
| WO2020155029A1 (zh) | 2020-08-06 |
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