Drawings
Fig. 1 is a schematic partial cross-sectional view of a microfluidic actuator module according to the present disclosure.
Fig. 2 is a schematic flow chart of a method for manufacturing the microfluidic actuator module according to the present disclosure.
Fig. 3A to 3T are exploded views illustrating steps of manufacturing a micro-fluid actuator of the micro-fluid actuator module according to the present invention.
Fig. 4 is a schematic top view of the microfluidic actuator module of the present disclosure.
Fig. 5 is another schematic top view of the present microfluidic actuator module.
Fig. 6A and 6B are schematic operation diagrams of the micro-fluid actuator module according to the present invention.
Fig. 7A to 7E are schematic top cross-sectional views of different types of valves of the present microfluidic actuator.
Fig. 8 is a schematic diagram of a driving circuit of the microfluidic actuator module according to the present disclosure.
Description of the reference numerals
100: the microfluidic actuator module 10: microfluidic actuator
1 a: first substrate
11 a: first surface
12 a: second surface
13 a: IC circuit
14 a: fluid outlet
15 a: nozzle orifice
1 b: first protective layer
11 b: outlet opening
1 c: the first photoresist layer
11 c: communicating flow passage
12 c: inlet flow passage
121 c: barrier structure
13 c: valve seat
131 c: columnar structure
14 c: opening of cavity
1 d: auxiliary substrate
1 e: film glue layer
1 f: valve layer
11 f: outlet valve
12 f: inlet valve
121 f: groove
13 f: first flow passage opening
1 g: second substrate
11 g: vibrating aperture
12 g: vibration region
13 g: pipe diameter zone
131 g: through hole
1 h: the second photoresist layer
11 h: cavity hole
12 h: second flow passage opening
1 i: conductive adhesive layer
1 j: piezoelectric layer
1 k: electrode layer
11k is as follows: lower electrode area
12 k: upper electrode region
13 k: second protective layer
131 k: lead wire
A. B, C, D: endpoint (control signal terminal)
B1: first joint
B2: second joint
E: vibration chamber
CT1, CT 2: direction of cutting
G: endpoint (grounding terminal)
L: logic generator
M: actuation area
P: location mark
PD: contact pad
PL: endpoint (left power supply end)
PR: endpoint (Right power supply end)
T: cutting mark
X-X, Y-Y: section line
S1-S10: method for manufacturing a microfluidic actuator module
Detailed Description
Embodiments that embody the features and advantages of this disclosure will be described in detail in the description that follows. It will be understood that the present disclosure is capable of various modifications without departing from the scope of the disclosure, and that the description and drawings are to be regarded as illustrative in nature, and not as restrictive.
Referring to fig. 1 and 4, in the embodiment of the present invention, a micro-fluid actuator module 100 includes a plurality of micro-fluid actuators 10, and is composed of a first substrate 1a, a first protection layer 1b, a first photoresist layer 1c, an auxiliary substrate 1d (as shown in fig. 2H to 2J), a thin film adhesive layer 1e (as shown in fig. 2H to 2J), a valve layer 1f, a second substrate 1g, a second photoresist layer 1H, a conductive adhesive layer 1i, a piezoelectric layer 1J, and an electrode layer 1k, and the manufacturing method thereof is described as follows, and the manufacturing process thereof will be described by using a single micro-fluid actuator 10 as an illustration.
Referring to fig. 2 to 3E, in step S1, a first substrate is provided to deposit and etch a first passivation layer. In this embodiment, the first substrate 1a has a first surface 11a and a second surface 12a opposite to the first surface 11a, and is formed on the first surface 11a of the first substrate 1a through a nitride material deposition process to form a first passivation layer 1b, an outlet opening 11b of the first passivation layer 1b and a fluid outlet 14a of the first substrate 1a are formed through an etching process, the first substrate 1a is thinned through a polishing process, and a nozzle 15a of the first substrate 1a is formed through an etching process. Wherein the outlet opening 11b of the first protect layer 1b communicates with the nozzle 15a through the fluid outlet 14a of the first substrate 1 a. In the present embodiment, the first substrate 1a is a silicon substrate, but not limited thereto. In the present embodiment, the nitride material is a silicon nitride material, but not limited thereto. In this embodiment, the fluid outlet 14a is formed on the first substrate 1a by a deep etching process, but not limited thereto. In this embodiment, the first substrate 1a is processed to form the nozzle 15a by a dry etching process, but not limited thereto. In the present embodiment, the deposition process of the first passivation layer 1b is a Chemical Vapor Deposition (CVD) process, but not limited thereto. In the present embodiment, the etching process of the first passivation layer 1b may be a wet etching process, a dry etching process, or a combination thereof, but not limited thereto. In the present embodiment, the first substrate 1a includes an IC circuit 13a disposed on the first substrate 1 a.
Referring to fig. 2, fig. 3F, fig. 3G and fig. 4, in step S2, the first passivation layer is rolled and a first photoresist layer is developed. In the present embodiment, a photoresist rolling process is performed on the first passivation layer 1b to form a first photoresist layer 1c, and a developing process is performed to form a communication channel 11c, an inlet channel 12c, a valve seat 13c and a cavity opening 14 c. In this embodiment, the cavity opening 14c communicates with the communicating flow channel 11c through the inlet flow channel 12 c. In the present embodiment, the photoresist material is a thick film photoresist, but not limited thereto. In the present embodiment, a plurality of barrier structures 121c (as shown in fig. 4) are disposed in the inlet flow channel 12c to filter impurities in the fluid, and the barrier structures 121c can also form a damping effect to reduce the backflow amount of the fluid. In other embodiments, the barrier structure 121c of the inlet channel 12c may be omitted, but not limited thereto.
Referring to fig. 2, fig. 3H and fig. 3I, in step S3, an auxiliary substrate is provided to roll-etch a film glue layer and a valve layer. In the embodiment, a thin film material rolling process is performed to form the thin film adhesive layer 1e on the auxiliary substrate 1d, a polymeric material rolling process is performed to form the valve layer 1f on the thin film adhesive layer 1e, and an outlet valve 11f, an inlet valve 12f and a first flow channel opening 13f of the valve layer 1f are formed by an etching process. In the embodiment, the polymer material is a Polyimide (PI) material, but not limited thereto. In this embodiment, the valve layer 1f is formed by a dry etching process or a laser etching process to form the outlet valve 11f, the inlet valve 12f and the first flow channel opening 13f, but not limited thereto.
Referring to fig. 2, 3J and 3K, in step S4, the valve layer is flipped over and bonded onto the first photoresist layer. In the embodiment, the valve layer 1f is bonded on the first photoresist layer 1c through an inversion alignment process and a Wafer Level Bonding (Wafer Level Bonding) process, and then the auxiliary substrate 1d is removed through soaking. Thereby, the first flow channel opening 13f of the valve layer 1f communicates with the communication flow channel 11c of the first photoresist layer 1 c. In the embodiment of the present invention, the soaking process is to soak the film adhesive layer 1e with a chemical agent to make the film adhesive layer 1e lose its adhesiveness, thereby removing the auxiliary substrate 1 d. In the present embodiment, a surface treatment process may be performed on the surface of the inlet valve 12f or the valve seat 13c at the first joint B1 of each inlet valve 12f of the valve layer 1f and the valve seat 13c corresponding to the first photoresist layer 1c, so that there is no joint effect between the inlet valve 12f and the valve seat 13c, and the action of the inlet valve 12f is facilitated.
Referring to fig. 2, fig. 3L, fig. 3M and fig. 5, in step S5, a second substrate is provided. In this embodiment, a vibration opening 11g and a cutting mark T are formed on the second substrate 1g by an etching process. In the present embodiment, the vibration openings 11g and the cutting marks T are formed on opposite sides of the second substrate 1 g. In the present embodiment, the vibration opening 11g is disposed to define a vibration region 12g, and the vibration region 12g corresponds to the position of the vibration opening 11 g. In the present embodiment, the second substrate 1g is made of a stainless material, but not limited thereto. In the embodiment, the etching process of the second substrate 1g is a half etching process, but not limited thereto.
Referring to fig. 2, fig. 3N and fig. 3O, in step S6, the second substrate is rolled and a second photoresist layer is developed. In the embodiment, a second photoresist layer 1h is formed on the second substrate 1g by a photoresist rolling process, and a cavity hole 11h and a second flow channel opening 12h are formed by a developing process.
Referring to fig. 2 and fig. 3P, in step S7, the second photoresist layer is flip-chip bonded and thermocompression bonded to the valve layer. In the present embodiment, the second photoresist layer 1h is bonded to the valve layer 1f through a Flip-Chip (Flip-Chip) process and a thermal pressing process. Therefore, the cavity hole 11h of the second photoresist layer 1h is communicated with the vibration opening 11g of the second substrate 1g and the cavity opening 14c of the first photoresist layer 1 c. Thus, the cavity hole 11h, the vibration opening 11g and the cavity opening 14c together form a vibration chamber E. In addition, the second channel opening 12h of the second photoresist layer 1h is communicated with the communication channel 11c of the first photoresist layer 1c through the first channel opening 13f of the valve layer 1 f. It should be noted that, in the embodiment of the present invention, each of the outlet valves 11f of the valve layer 1f and the second joint B2 of the second photoresist layer 1h are not joined during thermocompression bonding, i.e., there is no joint effect between the outlet valve 11f and the second photoresist layer 1h, so as to facilitate the operation of the outlet valve 11 f.
Referring to fig. 2 and fig. 3Q, in step S8, a conductive adhesive layer is screen printed on the second substrate. In the present embodiment, the conductive adhesive layer 1i is formed on the second substrate 1g through a conductive adhesive screen printing process. In the embodiment of the present invention, the Conductive adhesive material is Anisotropic Conductive Adhesive (ACP), but not limited thereto.
Referring to fig. 2, fig. 3R and fig. 3S, in step S9, a piezoelectric layer is adhered to the conductive adhesive layer. In the embodiment, the piezoelectric layer 1j is formed on the conductive adhesive layer 1i through a piezoelectric material pasting process, and then an actuating region M is defined through a cutting process. In the present embodiment, the opening width of the vibration opening 11g of the second substrate 1g is larger than the width of the actuation region M of the piezoelectric layer 1 j.
Referring to fig. 2 and fig. 3T, in step S10, an electrode layer is bonded to the piezoelectric layer and the second substrate. In the present embodiment, the electrode layer 1k is formed on the piezoelectric layer 1j and the second substrate 1g through an electrode material soldering process. The electrode layer 1k has a lower electrode region 11k and an upper electrode region 12k, and includes a second passivation layer 13 k. The lower electrode region 11k and the upper electrode region 12k are exposed outside the second passivation layer 13k and are electrically connected to the piezoelectric layer 1j and the second substrate 1g, respectively. The lower electrode regions 11k are formed on the actuation regions M of the piezoelectric layer 1j, respectively. In the embodiment, the electrode material is a flexible printed circuit board and a Polyimide (PI) is used as a substrate, but not limited thereto. In the present embodiment, the second passivation layer 13k includes a plurality of leads 131k electrically connected to the IC circuit 13a of the first substrate 1 a. In the present embodiment, each lead 131k is a copper foil gold-plating material, but not limited thereto.
Referring to FIG. 5, in one embodiment, FIGS. 3A-3T are taken on the X-X section. In the embodiment, the second substrate 1g further has a plurality of positioning marks P, so that the conductive adhesive layer 1i is subjected to a screen printing process according to the range of the positioning marks P, and then the piezoelectric layer 1j is subjected to a pasting process. The cutting process or the laser cutting process is performed along the cutting directions CT1 and CT2 according to the cutting marks T of the second substrate 1g, thereby defining the active region M of the piezoelectric layer 1 j. It should be noted that in the present embodiment, the bonding process is performed by using two piezoelectric layers 1j, so that the total amount of waste material is reduced, thereby reducing the cost, and in other embodiments, the bonding process may be performed by using a whole piezoelectric layer 1 j.
Referring to fig. 5, the second substrate 1g further has at least one pipe diameter region 13g, and the at least one pipe diameter region includes a through hole 131g communicating with the communicating channel 11c of the first photoresist layer 1 c. The caliber region 13g is disposed away from the actuation region M of the piezoelectric layer 1j to prevent the piezoelectric layer 1j from being wetted. In the present embodiment, the through hole 131g is formed by performing a half etching process from both sides of the second substrate 1g, but not limited thereto. In the embodiment, the second substrate 1g has two pipe diameter zones 13g, and in other embodiments, the number of the pipe diameter zones 13g can be changed according to the design requirement. In the embodiment, the through hole 131g is an elliptical shape, but not limited thereto, and the shape of the through hole 131g may be changed according to design requirements.
Referring to fig. 1, fig. 6A and fig. 6B, in the present embodiment, the micro-fluid actuator module 100 is operated by providing driving power sources with different phase charges to the lower electrode region 11k and the upper electrode region 12k, so as to drive and control the vibrating region 12g of the second substrate 1g to generate reciprocating displacement. As shown in fig. 1 and fig. 6A, when a positive voltage is applied to the upper electrode region 12k and a negative voltage is applied to the lower electrode region 11k, the actuating region M of the piezoelectric layer 1j drives the vibrating region 12g of the second substrate 1g to displace in a direction away from the first substrate 1 a. Thereby, the external fluid is sucked through the communication flow path 11c, passes through the inlet flow path 12c, pushes open the inlet valve 12f, and is collected in the vibration chamber E. It should be noted that the outlet valve 11f is pushed by the fluid against the second photoresist layer 1h, so that the fluid cannot flow into the outlet valve 11 f. As shown in fig. 1 and fig. 6B, the electrical properties of the lower electrode region 11k and the upper electrode region 12k are then switched, and a negative voltage is applied to the upper electrode region 12k and a positive voltage is applied to the lower electrode region 11k, so that the actuating region M of the piezoelectric layer 1j drives the vibrating region 12g of the second substrate 1g to displace toward the direction approaching the first substrate 1 a. Thereby, the fluid collected in the vibration chamber E is pushed, the outlet valve 11f is pushed open, and the fluid passes through the fluid outlet 14a of the first substrate 1a and is discharged from the nozzle 15a, thereby completing the transfer of the fluid. It should be noted that the inlet valve 12f is pushed by the fluid against the valve seat 13c of the first photoresist layer 1c, so that the fluid cannot be discharged from the inlet valve 12 f.
Referring to fig. 7A-7E, in this embodiment, the valve and valve seat of the micro-fluidic actuator module 100 can be implemented differently, and the inlet valve 12f is described as an example. As shown in fig. 7A, in the present embodiment, the inlet valve 12f is supported by the valve seat 13c to facilitate the original position to be restored after actuation. As shown in fig. 7B, in the present embodiment, the inlet valve 12f is designed by an S-shaped bracket to facilitate the expansion amount during the actuation and the original position after the actuation. As shown in fig. 7C, in this embodiment, a cylindrical structure 131C may be added to the valve seat 13C to ensure that the inlet valve 12f is not easily deformed during long-term operation, and the inlet valve 12f is perforated at a position opposite to the cylindrical structure 131C to increase the flow rate of the fluid passing through the inlet valve 12 f. Fig. 7D is a schematic diagram of the extension of fig. 7C, and fig. 7E is a schematic diagram of the cross section Y-Y of fig. 7D, in this embodiment, a plurality of grooves 121f are alternately etched on the front and back surfaces of the inlet valve 12f, so that the inlet valve 12f generates a spring effect during actuation, thereby greatly increasing the amount of actuation extension and simultaneously flattening the inlet valve 12 f. It should be noted that the implementation of the valve is not limited to the above, and may be changed according to different design requirements.
Referring to fig. 1 and 8, in the present embodiment, the micro fluid actuator module 100 further includes a logic generator L and a plurality of contact pads PD electrically connected to the IC circuit 13a of the first substrate 1a for controlling the operation of the micro fluid actuator module 100. The electrode layer 1k includes a plurality of terminals PL, PR, G, A, B, C, D for receiving an externally inputted control signal. Wherein, the terminals PL, PR represent the left and right power terminals respectively, and can be directly electrified to the second substrate 1g to form the lower electrode power; terminal G represents ground; and terminal A, B, C, D represents a control signal terminal. The pad PD is electrically connected to the logic generator L through the IC circuit 13a of the first substrate 1 a. For example, in the present embodiment, the micro-fluid actuator module 100 includes 8 micro-fluid actuators 10, and when a control signal (a ═ 1, B ═ 1, and C ═ 1) is externally input, the signal is decoded by the logic generator L and output to the contact pad PD1, thereby driving the micro-fluid actuator 10 numbered 1, and when a control signal (a ═ 1, B ═ 1, and C ═ 0) is externally input, the signal is decoded by the logic generator L and output to the contact pad PD2, thereby driving the micro-fluid actuator 10 numbered 2, and the micro-fluid actuators 10 numbered 3 to 8, and so on. It should be noted that the number of the micro-fluid actuators 10 is not limited to 8 in this embodiment, and may be changed according to the design requirement.
The present invention provides a method for manufacturing a micro-fluid actuator module, which is mainly manufactured by micro-electromechanical surface and body type processing and integrated molding with precision packaging technology, and can achieve the required flow rate by controlling the driving of the micro-fluid actuator, thereby having great industrial utilization value and applying the method.
Various modifications may be made by those skilled in the art without departing from the scope of the invention as defined by the appended claims.