CN111584473B - Dual-chip diode module - Google Patents
Dual-chip diode module Download PDFInfo
- Publication number
- CN111584473B CN111584473B CN202010510460.4A CN202010510460A CN111584473B CN 111584473 B CN111584473 B CN 111584473B CN 202010510460 A CN202010510460 A CN 202010510460A CN 111584473 B CN111584473 B CN 111584473B
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- Prior art keywords
- conductor
- chip
- board
- plate
- tail
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- 239000004020 conductor Substances 0.000 claims abstract description 179
- 238000000034 method Methods 0.000 claims abstract description 4
- 230000009977 dual effect Effects 0.000 claims 3
- 230000017525 heat dissipation Effects 0.000 abstract description 6
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/10—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers
- H01L25/11—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D
- H01L25/115—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices having separate containers the devices being of a type provided for in subclass H10D the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
- H01L23/4922—Bases or plates or solder therefor having a heterogeneous or anisotropic structure
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention relates to a double-chip diode module, which comprises a first conductor, a second conductor, a first chip, a second chip, a first plastic package body and a second plastic package body, wherein the first conductor is connected with the first chip; a first chip is arranged between the head end of the first conductor and the tail end of the second conductor, a first plastic package body is arranged outside the first chip, a second chip is arranged between the tail end of the first conductor and the head end of the second conductor, and a second plastic package body is arranged outside the second chip. The invention adopts a double-chip shunt mode to reduce the power consumption of the chip in the forward working process, and the same current input power consumption can be reduced by half. In the invention, the heat dissipation area of a single chip is larger, the influence of mutual heat is reduced due to the separate arrangement of the chips, and the rated current of the junction box is improved to a certain extent. In the invention, the direct connection between the chip and the conductor reduces intermediate connection, reduces the distance of heat conduction and has faster heat dissipation.
Description
Technical Field
The invention relates to a diode module in a junction box for a crystalline silicon solar cell module, in particular to a double-chip diode module.
Background
At present, the photovoltaic module mainly comprises a photovoltaic panel, a frame, EVA sealant, a backboard, a junction box and the like. The junction box is the most important circuit structural part in the photovoltaic assembly module, and not only controls effective connection among the assemblies, but also has a bypass protection function on each photovoltaic assembly. The conventional junction box mainly comprises a plastic box body box cover, a metal conductor, a bypass diode, a cable and a connector, and the connection function and the bypass protection function of the box body are determined by the internal circuit module of the junction box formed by the diode and the conductor to a great extent, so that the good internal circuit structure design determines stable and reliable connection and maximized rated current level.
Along with the continuous increase of battery size, rated current demand is also bigger and bigger, and the rated current demand of current whole battery and half battery of 210mm in limit reaches more than 25A, and current conventional diode circuit is unable to satisfy actual demand more and more, in order to satisfy current actual demand, this just needs to design and develop a diode circuit module that the consumption is lower, and the heat dissipation is faster better.
Disclosure of Invention
The invention aims to overcome the defects in the prior art and provide a dual-chip diode module with lower power consumption and faster and better heat dissipation.
According to the technical scheme provided by the invention, the double-chip diode module comprises a first conductor, a second conductor, a first chip, a second chip, a first plastic package body and a second plastic package body; a first chip is arranged between the head end of the first conductor and the tail end of the second conductor, a first plastic package body is arranged outside the first chip, a second chip is arranged between the tail end of the first conductor and the head end of the second conductor, and a second plastic package body is arranged outside the second chip.
Preferably, the first conductor comprises a first conductor main board, a first conductor connecting board, a first conductor tail board and a first conductor head board; the middle part of the right end of the first conductor main board is connected with a first conductor head board, the inner side of the left end of the first conductor main board is connected with a first conductor connecting board, and the outer side of the left end of the first conductor connecting board is connected with a first conductor tail board.
Further preferably, the right end of the first conductor head plate is widened, and the inner side and the outer side of the widened position are respectively provided with a first cable baffle plate which is bent upwards.
Further preferably, a first conductor waist hole is formed at the left end of the first conductor main plate so as to be inward and outward.
Preferably, the second conductor comprises a second conductor main board, a second conductor connecting board, a second conductor tail board and a second conductor head board; the middle part of the left end of the second conductor main board is connected with a second conductor head board, the outer side of the right end of the second conductor main board is connected with a second conductor connecting board, and the inner side of the right end of the second conductor connecting board is connected with a second conductor tail board.
Further preferably, the left end of the second conductor head plate is widened, and the inner side and the outer side of the widened position are respectively provided with a second cable baffle plate which is bent upwards.
Further preferably, a second conductor waist hole which is inward and outward is formed at the right end of the second conductor main plate.
Preferably, a portion of the second conductor main board extends into a notch formed by the first conductor main board, the first conductor connecting board and the first conductor tail board, the first conductor main board portion extends into a notch formed by the second conductor main board, the second conductor connecting board and the second conductor tail board, a second chip is arranged between the second conductor head board and the first conductor tail board, and a first chip is arranged between the second conductor tail board and the first conductor head board.
Preferably, the first plastic package encapsulates the first chip and a portion of the second conductor tail board and the first conductor head board.
Preferably, the second plastic package encapsulates the second chip and a portion of the second conductive header board and the first conductive tail board.
The invention adopts a double-chip shunt mode to reduce the power consumption of the chip in the forward working process, and the power consumption can be increased by 2 times as much as the rated current of the junction box.
In the invention, the heat dissipation area of a single chip is larger, the influence of mutual heat is reduced due to the separate arrangement of the chips, and the rated current of the junction box is improved to a certain extent.
In the invention, the direct connection between the chip and the conductor reduces intermediate connection, reduces the distance of heat conduction and has faster heat dissipation.
Drawings
Fig. 1 is a front view of the present invention.
Fig. 2 is a top view of the present invention.
Fig. 3 is a bottom view of the present invention.
Fig. 4 is an enlarged left-hand view of the present invention.
Fig. 5 is a perspective view of the present invention.
Detailed Description
The invention will be further illustrated with reference to specific examples.
The dual-chip diode module of the invention, as shown in fig. 1-5, comprises a first conductor 1, a second conductor 2, a first chip 3, a second chip 4, a first plastic package 5 and a second plastic package 6; a first chip 3 is arranged between the head end of the first conductor 1 and the tail end of the second conductor 2, a first plastic package 5 is arranged outside the first chip 3, a second chip 4 is arranged between the tail end of the first conductor 1 and the head end of the second conductor 2, and a second plastic package 6 is arranged outside the second chip 4.
The first conductor 1 comprises a first conductor main board 11, a first conductor connecting board 12, a first conductor tail board 13 and a first conductor head board 14; a first conductor header plate 14 is connected to the middle of the right end of the first conductor main plate 11, a first conductor connecting plate 12 is connected to the inner side of the left end of the first conductor main plate 11, and a first conductor tail plate 13 is connected to the outer side of the left end of the first conductor connecting plate 12.
The right end of the first conductor head plate 14 is widened, and the inner side and the outer side of the widened position are respectively provided with a first cable baffle 15 which is bent upwards.
A first conductor waist-shaped hole 16 which is inward and outward is formed in the left end of the first conductor main board 11, and the first conductor waist-shaped hole 16 is used for penetrating into the assembly to lead out the bus bar.
The second conductor 2 comprises a second conductor main board 21, a second conductor connecting board 22, a second conductor tail board 23 and a second conductor head board 24; a second conductor header plate 24 is connected to the middle of the left end of the second conductor main plate 21, a second conductor connecting plate 22 is connected to the outer side of the right end of the second conductor main plate 21, and a second conductor tail plate 23 is connected to the inner side of the right end of the second conductor connecting plate 22.
The left end of the second conductor head plate 24 is widened, and the inner side and the outer side of the widened position are respectively provided with a second cable baffle 25 which is bent upwards.
A second conductor waist-shaped hole 26 which is inward and outward is formed in the right end of the second conductor main board 21, and the second conductor waist-shaped hole 26 is used for penetrating into the assembly to lead out the bus bar.
The second conductor main board 21 partially extends into the notch formed by the first conductor main board 11, the first conductor connecting board 12 and the first conductor tail board 13, the first conductor main board 11 partially extends into the notch formed by the second conductor main board 21, the second conductor connecting board 22 and the second conductor tail board 23, the second chip 4 is arranged between the second conductor head board 24 and the first conductor tail board 13, and the first chip 3 is arranged between the second conductor tail board 23 and the first conductor head board 14.
The first plastic package 5 encapsulates the first chip 3 and a portion of the second conductive tail board 23 and the first conductive head board 14.
The second plastic package 6 encapsulates the second chip 4 and a portion of the second conductive header board 24 and the first conductive tail board 13.
In the invention, the first conductor main board 11, the first conductor connecting board 12 and the first conductor tail board 13 are all positioned on the same horizontal plane, and the first conductor head board 14 is arranged in a sinking mode; the second conductor main board 21, the second conductor connecting board 22 and the second conductor tail board 23 are all positioned on the same horizontal plane, and the second conductor head board 24 is arranged in a sinking mode.
The lower surface of the first chip 3 is fixed to the upper surface of the first conductor head plate 14, and the upper surface of the first chip 3 is fixed to the lower surface of the second conductor tail plate 23.
The lower surface of the second chip 4 is fixed to the upper surface of the second conductor head plate 24, and the upper surface of the second chip 4 is fixed to the lower surface of the first conductor tail plate 13.
In the invention, the first conductor 1 and the second conductor 2 are connected only at the first plastic package body 5 and the second plastic package body 6, and other parts are arranged at intervals.
The assembly process of the invention is as follows:
step one, placing a first conductor 1 and a second conductor 2;
step two, fixing a first chip 3 on the upper surface of a first conductor head plate 14 close to the first conductor main plate 11, and fixing a second chip 4 on the upper surface of a second conductor head plate 24 close to the second conductor main plate 21;
step three, the lower surface of the second conductor tail plate 23 is fixed with the upper surface of the first chip 3, and the lower surface of the first conductor tail plate 13 is fixed with the upper surface of the second chip 4;
fourthly, plastic packaging is carried out on the first chip 3 and the second chip 4 to form a first plastic package body 5 and a second plastic package body 6;
step five, bending the widened position of the right end of the first conductor head plate 14 to form a first cable baffle 15; the left end widening position of the second conductor head plate 24 is bent to form a second cable baffle 25.
The invention adopts the diode structure to combine with the conductor in design, the whole circuit is simplified, the circuit connection is reduced, and the reliability of the electric performance part is higher;
the current module of the invention can obtain the current and price required by the user by changing the specification sizes of the first chip 3 and the second chip 4;
the invention can be used by changing the conductor structure to meet the junction boxes with different sizes and structural requirements;
the invention meets the requirement of larger current, and rated current can reach more than 30A;
the circuit modularized structure is more beneficial to the automatic production of the junction box and has high production efficiency.
Claims (4)
1. A dual-chip diode module comprises a first conductor (1), a second conductor (2), a first chip (3), a second chip (4), a first plastic package body (5) and a second plastic package body (6); the method is characterized in that: a first chip (3) is arranged between the head end of the first conductor (1) and the tail end of the second conductor (2), a first plastic package body (5) is arranged outside the first chip (3), a second chip (4) is arranged between the tail end of the first conductor (1) and the head end of the second conductor (2), and a second plastic package body (6) is arranged outside the second chip (4);
the first conductor (1) comprises a first conductor main board (11), a first conductor connecting board (12), a first conductor tail board (13) and a first conductor head board (14); a first conductor head plate (14) is connected to the middle part of the right end of the first conductor main plate (11), a first conductor connecting plate (12) is connected to the inner side of the left end of the first conductor main plate (11), and a first conductor tail plate (13) is connected to the outer side of the left end of the first conductor connecting plate (12);
the right end of the first conductor head plate (14) is widened, and the inner side and the outer side of the widened position are provided with first cable baffles (15) which are bent upwards;
the second conductor (2) comprises a second conductor main board (21), a second conductor connecting board (22), a second conductor tail board (23) and a second conductor head board (24); a second conductor head plate (24) is connected to the middle part of the left end of the second conductor main plate (21), a second conductor connecting plate (22) is connected to the outer side of the right end of the second conductor main plate (21), and a second conductor tail plate (23) is connected to the inner side of the right end of the second conductor connecting plate (22);
the left end of the second conductor head plate (24) is widened, and the inner side and the outer side of the widened position are respectively provided with a second cable baffle plate (25) which is bent upwards.
2. The dual chip diode module of claim 1, wherein: the part of the second conductor main board (21) stretches into a notch formed by the first conductor main board (11), the first conductor connecting board (12) and the first conductor tail board (13), the part of the first conductor main board (11) stretches into a notch formed by the second conductor main board (21), the second conductor connecting board (22) and the second conductor tail board (23), a second chip (4) is arranged between the second conductor head board (24) and the first conductor tail board (13), and a first chip (3) is arranged between the second conductor tail board (23) and the first conductor head board (14).
3. The dual chip diode module of claim 1, wherein: the first plastic package body (5) packages the first chip (3), part of the second conductor tail plate (23) and the first conductor head plate (14).
4. The dual chip diode module of claim 1, wherein: the second plastic package body (6) packages the second chip (4), part of the second conductor head plate (24) and the first conductor tail plate (13).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010510460.4A CN111584473B (en) | 2020-06-08 | 2020-06-08 | Dual-chip diode module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010510460.4A CN111584473B (en) | 2020-06-08 | 2020-06-08 | Dual-chip diode module |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111584473A CN111584473A (en) | 2020-08-25 |
| CN111584473B true CN111584473B (en) | 2023-09-01 |
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ID=72118406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010510460.4A Active CN111584473B (en) | 2020-06-08 | 2020-06-08 | Dual-chip diode module |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111584473B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014534798A (en) * | 2011-10-11 | 2014-12-18 | リン, ジョーLIN, Joe | Diode cell module |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005183660A (en) * | 2003-12-19 | 2005-07-07 | Canon Inc | Solar cell module |
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2020
- 2020-06-08 CN CN202010510460.4A patent/CN111584473B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2014534798A (en) * | 2011-10-11 | 2014-12-18 | リン, ジョーLIN, Joe | Diode cell module |
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| Publication number | Publication date |
|---|---|
| CN111584473A (en) | 2020-08-25 |
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