CN111584388A - Monitoring method of ion implantation machine - Google Patents
Monitoring method of ion implantation machine Download PDFInfo
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- CN111584388A CN111584388A CN202010530978.4A CN202010530978A CN111584388A CN 111584388 A CN111584388 A CN 111584388A CN 202010530978 A CN202010530978 A CN 202010530978A CN 111584388 A CN111584388 A CN 111584388A
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/20—Sequence of activities consisting of a plurality of measurements, corrections, marking or sorting steps
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Abstract
The invention provides a monitoring method of an ion implantation machine, which is characterized in that at least 3 datum points on the same straight line are set on a semiconductor wafer; measuring the ion implantation of all the reference points to obtain the number of the reference points qualified by the ion implantation; and comparing the number of the reference points qualified for ion implantation with a threshold value, and determining whether the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified or not according to the comparison result. Therefore, the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is monitored, and further, the large deviation of the ion implantation amount of different areas of the semiconductor wafer is avoided when the ion implantation is carried out on the semiconductor wafer, and further, the yield of products is improved.
Description
Technical Field
The invention relates to the field of semiconductor manufacturing, in particular to a monitoring method of an ion implantation machine.
Background
The ion implantation technology is an important component of modern semiconductor manufacturing technology, and an ion implantation machine is used for accelerating ionized impurity atoms to the surface of a semiconductor wafer through an electrostatic field so as to achieve the purpose of doping and finally form various transistor structures. The distribution of doping impurities (i.e., implanted ions) is a decisive factor in the operating state of semiconductor devices. For ion implantation techniques to achieve doping, the ion beam energy, dose, and wafer deflection angle need to be tightly controlled. In the conventional ion implantation, the energy and dose of the ion beam of the ion implanter and the angle of the semiconductor wafer can be monitored, but the relative position between the ion beam of the ion implanter and the semiconductor wafer cannot be monitored, so that when the ion implantation is performed on the semiconductor wafer, the ion implantation amount of different regions of the semiconductor wafer is greatly different, for example, the ion implantation amount of the semiconductor wafer in a first region is large, the ion implantation amount of the semiconductor wafer in a second region is small, and the ion implantation amount of different regions of the semiconductor wafer has large deviation, thereby affecting the yield of the product. Therefore, it is desirable to provide a method for monitoring an ion implanter to monitor the relative position of an ion beam and a semiconductor wafer.
Disclosure of Invention
The present invention provides a method for monitoring an ion implanter to monitor the relative position of an ion beam and a semiconductor wafer of the ion implanter.
In order to solve the above technical problems, the present invention provides a method for monitoring an ion implantation machine, comprising:
providing a semiconductor wafer;
performing ion implantation on the semiconductor wafer;
setting at least 3 reference points on the same straight line on the semiconductor wafer;
measuring the ion implantation of all the reference points to obtain the number of the reference points qualified by the ion implantation; and the number of the first and second groups,
and comparing the number of the reference points qualified for ion implantation with a threshold value, and determining whether the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified or not according to the comparison result.
Optionally, in the method for monitoring an ion implantation machine, the method for obtaining the number of reference points qualified in ion implantation includes:
setting a plurality of datum lines by taking each datum point as a center in the vertical direction of the straight line where the datum point is located;
setting a plurality of calculation points on each reference line at set distance intervals;
acquiring the heat wave values of the reference points and the calculation points on the reference lines, and further comparing the heat wave values of the reference points and the calculation points on the reference lines to obtain the magnitude of the heat wave values of the calculation points;
judging whether the heat wave value of the reference point on each datum line is smaller than that of each calculation point or not; if yes, judging that the ion implantation of the reference point is qualified; if not, further comparing the heat wave values of all the calculation points of the same datum line to obtain the calculation point with the minimum heat wave value, and judging whether the distance between the calculation point with the minimum heat wave value and the datum point is less than 3 set distance intervals or not, if so, judging that the ion implantation of the datum point is qualified, and if not, judging that the ion implantation of the datum point is abnormal;
wherein the threshold value is in the range of 0-2.
Optionally, in the method for monitoring an ion implantation system, the method for monitoring an ion implantation system further includes: if the relative position between the ion beam of the ion implantation machine and the semiconductor wafer is abnormal, the relative position between the ion beam and the semiconductor wafer is adjusted so that the thermal wave value of the ion implantation of the reference point on each datum line is smaller than that of the ion implantation of each calculation point, and the thermal wave value of the ion implantation of each datum line is sequentially increased from the reference point to the plurality of calculation points.
Optionally, in the monitoring method of the ion implanter, the implantation energy for performing ion implantation on the semiconductor wafer is 20KeV to 2000 KeV.
Optionally, in the monitoring method of the ion implanter, the implantation concentration of the ion implantation performed on the semiconductor wafer is 1E11/cm2-5E13/cm2。
Optionally, in the monitoring method of the ion implanter, the implanted ions for performing ion implantation on the semiconductor wafer include one of arsenic ions, phosphorus ions, and boron ions.
In the monitoring method of the ion implantation machine, at least 3 reference points on the same straight line are set on a semiconductor wafer; measuring the ion implantation of all the reference points to obtain the number of the reference points qualified by the ion implantation; and comparing the number of the reference points qualified for ion implantation with a threshold value, and determining whether the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified or not according to the comparison result. Therefore, the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is monitored, and further, the large deviation of the ion implantation amount of different areas of the semiconductor wafer is avoided when the ion implantation is carried out on the semiconductor wafer, and further, the yield of products is improved.
Drawings
Fig. 1 is a schematic flow chart illustrating a monitoring method for an ion implantation system according to an embodiment of the present invention;
FIGS. 2-3 are schematic structural views of a semiconductor wafer surface according to an embodiment of the present invention;
wherein the reference numbers are as follows:
100-a semiconductor wafer; 110-a reference line; 120. 120a, 120b, 120 c-reference point; 130. 130a, 130b, 130c, 130 d-calculation points.
Detailed Description
The following describes the monitoring method of the ion implantation system according to the present invention with reference to the accompanying drawings and embodiments. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
It has been found that, when performing an ion implantation process, a certain angle is required between a semiconductor wafer and an ion beam of an ion implantation machine to ensure uniformity of ion implantation, and the reason why the non-uniformity of ion implantation of the semiconductor wafer is caused includes that the semiconductor wafer has high sensitivity to variation of an ion implantation angle (or a deflection angle of the semiconductor wafer), and if the angle of the semiconductor wafer or the ion beam of the ion implantation machine is deviated, the non-uniformity of ion implantation on the semiconductor wafer is caused, resulting in a large deviation of ion implantation amount in different regions of the semiconductor wafer when performing ion implantation on the semiconductor wafer.
The core idea of the application is to provide a monitoring method of an ion implantation machine, which is characterized in that at least 3 datum points on the same straight line are set on a semiconductor wafer; measuring the ion implantation of all the reference points to obtain the number of the reference points qualified by the ion implantation; and comparing the number of the reference points qualified for ion implantation with a threshold value, and determining whether the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified or not according to the comparison result. Therefore, the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is monitored, large deviation of ion implantation amount of different areas of the semiconductor wafer is avoided when the semiconductor wafer is subjected to ion implantation, and the yield of products is further improved.
Please refer to fig. 1, which is a flowchart illustrating a monitoring method for an ion implanter according to an embodiment of the invention. As shown in fig. 1, the monitoring method of the ion implantation system includes the following steps:
step S1: providing a semiconductor wafer;
step S2: performing ion implantation on the semiconductor wafer;
step S3: setting at least 3 reference points on the same straight line on the semiconductor wafer;
step S4: measuring the ion implantation of all the reference points to obtain the number of the reference points qualified by the ion implantation;
step S5: and comparing the number of the reference points qualified for ion implantation with a threshold value, and determining whether the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified or not according to the comparison result.
First, step S1 is executed to provide a semiconductor wafer 100; the semiconductor wafer 100 includes an identification gap, the ion implantation is performed on the semiconductor wafer 100 through an ion implantation machine, and when the ion implantation is performed on the semiconductor wafer 100, the semiconductor wafer 100 is perpendicular to the ion implantation machine, and the identification gap forms an included angle in the vertical direction of the ion implantation machine.
Specifically, the semiconductor wafer 100 may be an N-type silicon wafer or a P-type silicon wafer, and the material of the semiconductor wafer 100 may include, but is not limited to, silicon, germanium, silicon germanium, gallium arsenide, or silicon germanium semiconductor.
Next, step S2 is performed to perform ion implantation on the semiconductor wafer 100. Here, the semiconductor wafer 100 is ion-implanted by an ion implanter, and specifically, the semiconductor wafer 100 is ion-implanted by an ion beam of the ion implanter. The implantation ions for ion implantation into the semiconductor wafer 100 include, but are not limited to, one of arsenic ions, phosphorus ions, and boron ions, and may be other ions known to those skilled in the art, such as germanium ions. Preferably, the ion implantation energy is 20KeV to 2000KeV, for example, 210KeV, 230KeV, or 2000 KeV; the implantation concentration of the ion implantation is 1E11/cm2-5E13/cm2The ion quantity of the ion implantation is controlled by the concentration and energy of the ion implantation. The invention does not limit the ion implantation, the implantation concentration and the implantation energy of the ion implantation, and can adjust the parameters of the ion implantation according to the actual product requirements.
Please refer to fig. 2 to 3, which are schematic structural diagrams of a semiconductor wafer surface according to an embodiment of the present invention; as shown in fig. 2, step S3 is executed to set at least 3 reference points 110 on the same straight line on the semiconductor wafer; in the present embodiment, 3 fiducial points are taken as an example, such as a first fiducial point 110a, a second fiducial point 110b and a third fiducial point 110c, wherein the 3 fiducial points 110 on the same line at least include one fiducial point located at the center of the semiconductor wafer, such as the second fiducial point 110 b. The number of the reference points 110 may also be more than 3 to improve the accuracy of the measurement. Further, all the reference points 110 on the semiconductor wafer 100 may be parallel to the axis of the target disk of the ion implanter, so as to better measure the thermal wave values of different areas of the semiconductor wafer 100 in the subsequent process, and the target disk belongs to a device in the existing ion implanter and is not described herein again.
Preferably, the distance between the reference points 110 may be the same, for example, the distance from the first reference point 110a to the second reference point 110b may be equal to the distance from the second reference point 110b to the third reference point 110c, so as to better monitor whether the relative position between the ion beam and the semiconductor wafer 100 of the ion implantation machine is acceptable.
In step S4, the ion implantation of all the reference points 110 is measured to obtain the number of the reference points 110 that are qualified for ion implantation. More specifically, the method for obtaining the number of the reference points 110 qualified for ion implantation includes: setting a plurality of reference lines 120 with each of the reference points 110 as a center in a direction perpendicular to a straight line on which the reference point 110 is located; wherein the number of the reference lines 120 is the same as the number of the reference points 110; the reference lines 120 are spaced apart from each other, and the reference lines 120 are parallel to each other. For example, the first reference line 120a, the second reference line 120b and the third reference line 120c are parallel to each other and spaced apart from each other by a predetermined distance.
Next, a plurality of calculation points 130 are set at predetermined distance intervals on each reference line 120, and for example, a first calculation point 130a, a second calculation point 130b, a third calculation point 130c, and a fourth calculation point 130d are set at predetermined distance intervals on a first reference line 120a, with the first reference point 110a as the center, that is, a plurality of calculation points 130 are set at both sides of the reference point 110 at predetermined distances on each reference line 120, with the reference point 110 as the center. The heat wave values of the plurality of calculation points 130 on the same reference line 120 are different. Here, the plurality of calculation points 130 of each reference line 120 are centered on the reference point 110, that is, the plurality of calculation points 130 of each reference line 120 are located on both sides of the reference point 110. Here, for example only, the number of the calculation points on each of the reference lines may be plural, for example, 4, 6, 8, and the like. For example, in all the reference lines 120, on the reference line 120 with the longest length, the number of the calculation points 130 on both sides of the reference point 110 is at least 6, and the calculation points are uniformly distributed on both sides of the reference point, so as to improve the measurement accuracy. Here, the reference line 120 having the longest length may be understood as a reference line 120 having the same length as the diameter of the semiconductor wafer 100, for example, a second reference line 120 b. The distance between two adjacent reference points 110 may be n/4, where n is the distance interval between all the calculation points 130 on a reference line 120 with the longest length, so as to improve the effectiveness of the subsequent thermal wave value measurement on the calculation points 130.
Then, the heat wave values (TW) of the reference point 110 and all the calculation points 130 on each reference line 120 are acquired, and the magnitude of the heat wave value (TW) of the reference point 110 and the magnitude of the heat wave value (TW) of each calculation point on each reference line 120 are obtained by comparison; the thermal wave value (TW) of each reference point 110 may be acquired by a thermal wave meter, and whether the ion implantation of the reference point 110 is acceptable or not may be determined by the thermal wave value (TW), and specifically, the thermal wave value of the semiconductor wafer 100 may be measured, and then the thermal wave values (TW) of the reference points 110 and all the calculation points 130 on each reference line 120 may be obtained. That is, whether the ion implantation of the semiconductor wafer 100 is qualified is determined according to the thermal wave value of the ion implantation, so as to further determine whether the relative position between the ion beam of the ion implantation machine and the semiconductor wafer 100 is qualified.
Then, determining whether the thermal wave value of the reference point 110 on each reference line 120 is smaller than the thermal wave value of each calculation point 130, if so, determining that the ion implantation of the reference point 110 is qualified, otherwise, further comparing the thermal wave values of all the calculation points of the same reference line 120 to obtain the calculation point with the minimum thermal wave value, and determining whether the distance between the calculation point with the minimum thermal wave value and the reference point 110 is smaller than 3 set distance intervals; if yes, the ion implantation of the reference point 110 is determined to be qualified, and if not, the ion implantation of the reference point 110 is determined to be abnormal. Then, the number of the reference points 110 that are qualified is counted. Further, when the ion implantation of the fiducial 110 is determined to be acceptable, the number of acceptable fiducials 110 may be automatically counted by a program. In general, if the relative position between the ion beam of the ion implanter and the semiconductor wafer is acceptable, the thermal wave value from the center of the semiconductor wafer 100 to the edge of the semiconductor wafer 100 may be from small to large, or the thermal wave value from the reference point 110 on each reference line 120 to the calculation points 130 on both sides thereof may be from small to large, respectively.
By measuring the thermal wave value (TW) of each reference point 110, the measurement result is more accurate, which is beneficial to subsequent judgment. The uniformity of the thermal wave value (TW) reflects the uniformity of lattice damage during the ion implantation, which reflects the uniformity of ion implantation. The lattice damage during ion implantation is the prior art, and the description of the invention is omitted.
In the embodiment of the present invention, the reference point 110, the reference line 120, the calculation point, and the like may be set on the semiconductor wafer thermal wave value map, and the thermal wave value (TW) may be automatically counted or compared by a method of setting a program to realize step S4, and the implementation of step S4 may be realized by various methods without limitation.
In step S5, the number of reference points 110 that are acceptable for ion implantation is compared with a threshold, and it is determined whether the relative position between the ion beam of the ion implanter and the semiconductor wafer 100 is acceptable according to the comparison result. The specific method comprises the following steps: judging whether the number of the reference points 110 qualified for ion implantation is within the threshold range, and if so, judging that the uniformity of the ion implantation of the semiconductor wafer 100 is qualified; if not, judging that the uniformity of the ion implantation of the semiconductor wafer 100 is abnormal; wherein the threshold value is in the range of 0-2.
The monitoring method of the ion implantation machine further comprises the following steps: when the relative position between the ion beam of the ion implantation machine and the semiconductor wafer 100 is determined to be qualified, batch ion implantation can be performed on the semiconductor wafer 100. If the relative position between the ion beam of the ion implanter and the semiconductor wafer 100 is abnormal, the relative position between the ion beam of the ion implanter and the semiconductor wafer 100 is adjusted so that the thermal wave value of the ion implantation at the reference point on each of the reference lines is smaller than the thermal wave value of the ion implantation at each of the calculation points, and the thermal wave value of the ion implantation at each of the reference lines 120 is sequentially increased from the reference point 110 to the plurality of calculation points 130. Even if the thermal wave value of the ion implantation of each reference point 110 is the minimum thermal wave value of the reference line 120, the thermal wave value of the ion implantation of each reference line 120 is increased from the reference point 110 to a plurality of calculation points.
Specifically, by adjusting the relative angle between the semiconductor wafer 100 and the ion beam of the ion implanter, the thermal wave value of the ion implantation from the reference point 110 to each calculation point 130 on the first side of each reference line is sequentially increased, and the thermal wave value of the ion implantation from the reference point 110 to each calculation point 130 on the second side of each reference line 120 is sequentially increased, even if the thermal wave value of the calculation point 130 close to the reference point 110 is larger than that of the calculation point 130 far from the reference point on each reference line 120, the ion implantation amount of the calculation points 130 on both sides of each reference point 110 is symmetrical, that is, the ion implantation amount of different regions of the semiconductor wafer is prevented from being greatly deviated when the semiconductor wafer is subjected to the ion implantation.
More specifically, as illustrated by the first datum line 120a, by adjusting the relative angle between the semiconductor wafer 100 and the ion implanter, the thermal wave values from the reference point 110a on the first datum line 120a to the first calculation point 130a and the second calculation point 130b on the first side thereof are from small to large, that is, the thermal wave value of the reference point 110a is smaller than that of the first calculation point 130a, the thermal wave value of the first calculation point 130a is smaller than that of the second calculation point 130b, the thermal wave values from the reference point 110a to the third calculation point 130c and the fourth calculation point 13d on the first reference line 120a are from small to large, that is, the thermal wave value of the first calculation point 130a on the first side of the reference point 110a is smaller than that of the second reference point 130b, and the thermal wave value of the third calculation point 130c located at the second side of the reference point 110a is smaller than that of the fourth reference point 130 d. That is, by adjusting the relative position between the ion beam of the ion implanter and the semiconductor wafer 100, the thermal wave value of the ion implantation of each reference line 120 is sequentially increased from the reference point 110 to the plurality of calculation points 130 on both sides thereof, and even if the thermal wave value of the ion implantation of the calculation point 130 having a smaller distance from the reference point on each reference line 120 is larger as the distance from the reference point is smaller, the thermal wave value of the calculation point 130 having a larger distance from the reference point 110 is larger, during the ion implantation, the amounts of ions implanted on both sides of the reference point 110 of each reference line are symmetrical, so that the difference of the amounts of ion implantation of the semiconductor wafer 100 during the ion implantation is small, the large deviation of the amounts of ion implantation of different regions of the semiconductor wafer is avoided, and the yield of the product is improved.
In summary, in the monitoring method of the ion implantation machine provided by the invention, at least 3 reference points on the same straight line are set on the semiconductor wafer; measuring the ion implantation of all the reference points to obtain the number of the reference points qualified by the ion implantation; and comparing the number of the reference points qualified for ion implantation with a threshold value, and determining whether the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified or not according to the comparison result. Therefore, the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is monitored, and further, the large deviation of the ion implantation amount of different areas of the semiconductor wafer is avoided when the ion implantation is carried out on the semiconductor wafer, and further, the yield of products is improved.
The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.
Claims (10)
1. A method for monitoring an ion implantation tool, comprising:
providing a semiconductor wafer;
performing ion implantation on the semiconductor wafer;
setting at least 3 reference points on the same straight line on the semiconductor wafer;
measuring the ion implantation of all the reference points to obtain the number of the reference points qualified by the ion implantation; and the number of the first and second groups,
and comparing the number of the reference points qualified for ion implantation with a threshold value, and determining whether the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified or not according to the comparison result.
2. A method as claimed in claim 1, wherein the step of obtaining a number of fiducial points acceptable for ion implantation comprises:
setting a plurality of datum lines by taking each datum point as a center in the vertical direction of the straight line where the datum point is located;
setting a plurality of calculation points on each reference line at set distance intervals;
acquiring the heat wave values of the reference points and the calculation points on the reference lines, and further comparing the heat wave values of the reference points and the calculation points on the reference lines to obtain the magnitude of the heat wave values of the calculation points;
judging whether the heat wave value of the reference point on each datum line is smaller than that of each calculation point or not; if yes, judging that the ion implantation of the reference point is qualified; if not, further comparing the heat wave values of all the calculation points of the same datum line to obtain the calculation point with the minimum heat wave value, and judging whether the distance between the calculation point with the minimum heat wave value and the datum point is less than 3 set distance intervals or not, if so, judging that the ion implantation of the datum point is qualified, and if not, judging that the ion implantation of the datum point is abnormal;
and counting the number of the reference points qualified by ion implantation.
3. The method as claimed in claim 2, wherein the thermal wave values of the plurality of calculation points on the same reference line are different.
4. The method of claim 2, wherein the thermal wave values of each of the reference points and each of the calculated points are obtained by a thermal wave meter.
5. The method of claim 2, wherein the fiducial lines are spaced apart and parallel to each other.
6. A method for monitoring an ion implanter as defined in claim 2, wherein determining whether the relative position of the ion beam of the ion implanter and the semiconductor wafer is acceptable comprises:
judging whether the number of the reference points qualified in ion implantation is within the threshold value, if so, judging that the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is qualified;
if not, determining that the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is abnormal;
wherein the threshold value is in the range of 0-2.
7. The method of claim 6, further comprising: and if the relative position of the ion beam of the ion implantation machine and the semiconductor wafer is abnormal, adjusting the relative position of the ion beam of the ion implantation machine and the semiconductor wafer so that the thermal wave value of the ion implantation of the reference point on each datum line is smaller than that of the ion implantation of each calculation point, and the thermal wave value of the ion implantation of each datum line is sequentially increased from the reference point to the plurality of calculation points.
8. The method of claim 1, wherein an implantation energy of the ion implantation performed on the semiconductor wafer is 20KeV to 2000 KeV.
9. The method as claimed in claim 1, wherein the implantation concentration of the ion implantation performed on the semiconductor wafer is 1E11/cm2-5E13/cm2。
10. The method of claim 1, wherein the implanted ions for ion implantation of the semiconductor wafer comprise one of arsenic ions, phosphorous ions and boron ions.
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| CN103646892A (en) * | 2013-11-29 | 2014-03-19 | 上海华力微电子有限公司 | A method for monitoring an ion implantation angle |
| CN103839858A (en) * | 2014-03-17 | 2014-06-04 | 上海华虹宏力半导体制造有限公司 | Process capability monitoring method and ion implantation method for of ion implanter |
| CN105261582A (en) * | 2014-07-03 | 2016-01-20 | 中芯国际集成电路制造(上海)有限公司 | Calibration method for wafer angle |
| CN106298477A (en) * | 2015-06-02 | 2017-01-04 | 中芯国际集成电路制造(上海)有限公司 | The monitoring method at ion implanting angle |
| CN110854033A (en) * | 2019-11-25 | 2020-02-28 | 上海华力微电子有限公司 | Ion implantation angle deviation monitoring method and system |
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