CN106298477A - The monitoring method at ion implanting angle - Google Patents
The monitoring method at ion implanting angle Download PDFInfo
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- CN106298477A CN106298477A CN201510296748.5A CN201510296748A CN106298477A CN 106298477 A CN106298477 A CN 106298477A CN 201510296748 A CN201510296748 A CN 201510296748A CN 106298477 A CN106298477 A CN 106298477A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
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- H—ELECTRICITY
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- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
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- H—ELECTRICITY
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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Abstract
The present invention provides the monitoring method of a kind of ion implantation angle, including: multi-disc monitoring wafer is provided；Ion implanting is carried out in monitoring wafer is sequentially placed into ion implantation apparatus；Monitoring wafer has certain tilted ion implantation angle and a wafer anglec of rotation, and arbitrarily at least one is not mutually equal in the tilted ion implantation angle of two panels monitoring wafer and the wafer anglec of rotation.Use heat wave to measure the surface of the monitoring wafer that ion implanting completes, to obtain heat wave value, judge the accuracy at ion implanting angle according to heat wave value.The present invention has different tilted ion implantation angles or the anglec of rotation by making different monitoring wafer during ion implanting, and compare after the monitoring wafer obtained is carried out heat wave measurement, effectively eliminate the impact of lattice skew so that the result of monitoring has higher accuracy；Meanwhile, whole monitoring process has only to six monitoring wafer are carried out ion implanting and heat wave measure analysis, is greatly saved the time of measurement and the cost of measurement.
Description
Technical field
The present invention relates to the ion implantation technique in semiconductor fabrication process, particularly relate to the monitoring method at a kind of ion implanting angle.
Background technology
Ion implanting is the very important technology of one during modern integrated circuits manufactures, and it utilizes ion implantation apparatus to realize quasiconductor
Doping, specifically will change its conductive characteristic final in injecting semiconductor silicon wafer in the way of acceleration of ions by foreign atom
Form transistor arrangement.
Impurity be accurately positioned the key factor being to ensure that advanced device optimal operational condition.For ion implanting, agent
Amount, energy and ion implanting angle are required for being accurately controlled, and the performance of the transistor that guarantee is formed meets technological requirement.And
Wherein, the difference at ion implanting angle will result in the electrical quantity that the ion implanting degree of depth changes and then affects device, therefore, notes ion
The control entering angle is the most necessary.Implanted layer important in some advanced technologies is such as lightly doped seepage (LDD) layer or bag (PKT)
Implanted layer is very sensitive to the angle of ion implanting, and now the error at ion implanting angle will drive electric current (ION) and cut-off leakage
Electricity building (IOFF) causes negative impact.
But, ion implantation apparatus then can produce deviation after the operation of certain time, inevitably causes ion implanting
The deviation that angle exists.Accordingly, it would be desirable to the angle of periodic monitoring ion implanting, meet technological requirement guaranteeing that ion implantation apparatus is in
Within the scope of.
In existing technique, the monitoring method for the ion implanting angle of batch-type (Batch type) ion implantation apparatus is general
For selecting nine monitoring wafer to be sequentially placed into respectively on the target disc (disk) of batch-type ion implantation apparatus in identical ion implanting
Ion implanting is carried out, when monitoring wafer every described is carried out ion implanting, all by adjusting under conditions of energy and implantation dosage
Whole batch-type ion implantation apparatus makes to be respectively provided with different ions during monitoring wafer every described is carried out ion implanting
Injector angle.Whole ion implantation process needs to complete in nine times, each ion implanting as shown in Fig. 1 a to Fig. 1 b, a piece of monitoring
Wafer 13 is placed on the periphery of described target disc 11, and the recess 14 of described monitoring wafer 13 together with 12 setoff wafers 12
Center towards described target disc 11.Carrying out described nine monitoring wafer after ion implanting completes, reusable heat ripple measures described
The heat wave value on nine monitoring wafer surfaces, is monitored the accuracy of ion implanting according to described heat wave value.
But, above-mentioned monitoring method there is problems in that
1) due to batch-type ion implantation apparatus carry out ion implanting time, wafer is respectively positioned on the periphery of target disc, and described target disc periphery
There is certain cone angle tilt so that in ion implantation process, there is the ditch of cone angle effects, described cone angle effects and described wafer
Channel effect can cause the heat wave value of measured wafer surface the most uneven together, and then the standard that impact is to the monitoring of ion implanting angle
Really property.
2) result that monitoring obtains does not considers the lattice deviation angle (i.e. wafer angular variation when axially cutting) of wafer, wafer
The existence of lattice deviation angle inherently affects the accuracy of ion implanting angle monitoring.
3) whole monitoring process needs that nine monitoring wafer carry out ion implanting respectively and heat wave is measured and analyzed so that whole monitoring
Process time is longer, relatively costly.
Summary of the invention
The shortcoming of prior art in view of the above, it is an object of the invention to provide the detection method at a kind of ion implanting angle, uses
In solving the longest, the relatively costly time-consuming problem of the highest and whole monitoring process of monitoring result accuracy present in prior art.
For achieving the above object and other relevant purposes, the present invention provides the monitoring method of a kind of ion implantation angle, described ion
The monitoring method of implant angle comprises the following steps:
Thering is provided multi-disc monitoring wafer, described monitoring wafer is respectively provided with a recess；
Ion implanting is carried out in described monitoring wafer is sequentially placed into ion implantation apparatus；In ion implantation process, described monitoring crystalline substance
Sheet has certain tilted ion implantation angle and the wafer anglec of rotation；Wherein, the described ion implanting of monitoring wafer described in any two panels
In inclination angle and the wafer anglec of rotation, at least one is not mutually equal；
Use heat wave to measure the surface of the described monitoring wafer that ion implanting completes, to obtain heat wave value, sentence according to described heat wave value
The accuracy of the sub-injector angle of dialysis.
Preferably, using batch-type ion implantation apparatus that described monitoring wafer carries out ion implanting, described batch-type ion is noted
The target disc supporting described monitoring wafer it is provided with in entering machine.
Preferably, the quantity of described monitoring wafer is six, and described six monitoring wafer carry out the concrete side of ion implanting successively
Method is:
Definition ion beam mutation inclination angle first direction and second direction；Definition is injected ion beam and is injected into described prison with vertical angle
It is 0 ° with the tilted ion implantation angle in second direction in a first direction when surveying center wafer；And distinguish tilted ion implantation angle
Positive and negative；The anglec of rotation of definition monitoring wafer；It is described when defining the recess of described monitoring wafer towards the center of described target disc
The anglec of rotation of monitor wafer is 0 °；And define the anglec of rotation change be adjusted to direct rotational direction in the counterclockwise direction.；
Ion implanting is carried out in the described monitoring wafer of first to the 6th slice is sequentially placed into described batch-type ion implantation apparatus,
In ion implantation process, the tilted ion implantation angle with second direction in a first direction of monitoring wafer described in first is respectively α1With
β1, the anglec of rotation is θ1；Second described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α2With
β2, the anglec of rotation is θ2；3rd described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α3With
β3, the anglec of rotation is θ3；4th described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α4With
β4, the anglec of rotation is θ4；5th described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α5With
β5, the anglec of rotation is θ5；6th described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α6With
β6, the anglec of rotation is θ6。
Preferably, described first direction and second direction all point to the edge of described monitoring wafer from the center of described monitoring wafer,
And described first direction is vertical with described second direction；Inject ion beam and be partial to described first direction or described second direction, ion
Inject inclination angle be designated as on the occasion of；Inject ion beam and be partial to opposite direction or the opposite direction of described second direction of described first direction, from
Son injects inclination angle and is designated as negative value.
Preferably, α1～α6, β1～β6Span be more than or equal to-2 ° less than or equal to 2 °；θ1～θ6Value be 0
°, 90 °, 180 ° or 270 °.
Preferably, α1=-1 °, α3=1 °, α2=α4=α5=α6=0 °；β1=β2=β3=β4=β5=β6=0 °；θ1=θ2=θ3=0 °, θ4=90
°, θ5=180 °, θ6=270 °.
Preferably, the accuracy at ion implanting angle is judged according to described heat wave value method particularly includes:
The center defining described monitoring wafer is coordinate center, and distinguishes the point in described monitoring wafer to described coordinate centre distance
Positive and negative；
With heat wave value as vertical coordinate, the distance of the point in monitoring wafer to monitoring wafer center be vertical coordinate simulate respectively first,
Second, the 3rd and the 5th described monitoring wafer are at second direction and the parabola of in the reverse direction thereof, and obtain described respectively
Parabolical axis of symmetry；
Calculate first, second and the 3rd described monitoring wafer heat wave value in described second direction and in the reverse direction thereof respectively
Meansigma methods, with described meansigma methods as vertical coordinate, tilted ion implantation angle be abscissa simulate respectively first, second and
The comprehensive parabola of the 3rd described monitoring wafer, and obtain described comprehensive parabolical axis of symmetry；
With heat wave value as vertical coordinate, the distance of the point in monitoring wafer to monitoring wafer center is that vertical coordinate simulates the 4th respectively
And the 6th described monitoring wafer is at described first direction and the parabola of in the reverse direction thereof, and obtain respectively described parabolical right
Claim axle；
First is the axis of symmetry represented with distance to the parabolical axis of symmetry that the 6th described monitoring wafer is corresponding, by described
The axis of symmetry represented with distance is separately converted to the axis of symmetry represented with angle；
The parabolical symmetry that parabolical axis of symmetry corresponding to the 4th described monitoring wafer is corresponding with the 6th described monitoring wafer
The half of axle sum is described monitoring wafer lattice deviation angle in said first direction；First is to the 3rd described monitoring
Comprehensive parabolical axis of symmetry and the difference of described monitoring wafer lattice deviation angle in said first direction that wafer is corresponding are note
Enter ion beam tilted ion implantation angle in said first direction；The parabolical axis of symmetry that second described monitoring wafer is corresponding
The half of the parabolical axis of symmetry sum corresponding with the 5th described monitoring wafer is described monitoring wafer in described second direction
On lattice deviation angle；Parabolical axis of symmetry corresponding to second described monitoring wafer with described monitoring wafer in described second party
The difference of lattice deviation angle upwards is injection ion beam tilted ion implantation angle in this second direction.
Preferably, the some distance apart from described coordinate center along described first direction or described second direction is designated as on the occasion of, edge
The point of the opposite direction of described first direction or the in the reverse direction of the described second direction distance apart from described coordinate center is designated as negative value.
Preferably, the formula that the axis of symmetry that described distance represents is converted into the axis of symmetry that angle represents is:Wherein,
δ is cone angle, and R is the radius of described monitoring wafer, and γ is the axis of symmetry represented with angle, and L is the axis of symmetry represented with distance.
Preferably, described six monitoring wafer have identical crystal orientation.
As it has been described above, the monitoring method of the ion implantation angle of the present invention, have the advantages that the present invention passes through at ion
Different monitoring wafer is made to have different tilted ion implantation angles or the anglec of rotation, and the monitoring wafer that will obtain during injection
Compare after carrying out heat wave measurement, effectively eliminate the impact of lattice skew so that the result of monitoring has higher
Accuracy；Meanwhile, whole monitoring process has only to six monitoring wafer are carried out ion implanting and heat wave measure analysis, significantly saves
Save the time and the cost of measurement measured.
Accompanying drawing explanation
Fig. 1 a is shown as monitoring wafer and the setoff target disc that is positioned in batch-type ion implantation apparatus of wafer in prior art
Schematic top plan view.
Fig. 1 b is shown as monitoring wafer and the setoff target disc that is positioned in batch-type ion implantation apparatus of wafer in prior art
Schematic side view.
Fig. 2 is shown as the flow chart of the monitoring method of the ion implantation angle of the present invention.
First direction defined in the monitoring method of the ion implantation angle that Fig. 3 is shown as the present invention and the schematic diagram of second direction.
Element numbers explanation
11 target discs
12 setoff wafers
13 monitoring wafer
14 recesses
δ cone angle
Detailed description of the invention
Below by way of specific instantiation, embodiments of the present invention being described, those skilled in the art can be by disclosed by this specification
Content understand other advantages and effect of the present invention easily.The present invention can also be added by the most different detailed description of the invention
To implement or application, the every details in this specification can also be based on different viewpoints and application, in the essence without departing from the present invention
Various modification or change is carried out under god.
Refer to figure and refer to Fig. 2 to Fig. 3.It should be noted that the diagram provided in the present embodiment is said the most in a schematic way
The basic conception of the bright present invention, though package count when only showing the assembly relevant with the present invention rather than implement according to reality in Tu Shi
Mesh, shape and size are drawn, and during its actual enforcement, the kenel of each assembly, quantity and ratio can be a kind of random change, and its
Assembly layout kenel is likely to increasingly complex.
Referring to Fig. 2, the present invention provides the monitoring method of a kind of ion implantation angle, the monitoring method of described ion implantation angle
At least comprise the following steps: providing multi-disc monitoring wafer, described monitoring wafer is respectively provided with a recess；
S1: carry out ion implanting in described monitoring wafer is sequentially placed into ion implantation apparatus；In ion implantation process, described prison
Survey wafer and there is certain tilted ion implantation angle and the wafer anglec of rotation；Wherein, the described ion of monitoring wafer described in any two panels
Inject at least one in inclination angle and the wafer anglec of rotation to be not mutually equal；
S2: use heat wave to measure the surface of the described monitoring wafer that ion implanting completes, to obtain heat wave value, according to described heat wave
Value judges the accuracy at ion implanting angle.
Perform step S1, refer to the S1 step in Fig. 2 and Fig. 3, enter in described monitoring wafer is sequentially placed into ion implantation apparatus
Row ion implanting；In ion implantation process, described monitoring wafer has certain tilted ion implantation angle and the wafer anglec of rotation；
Wherein, in the described tilted ion implantation angle of monitoring wafer described in any two panels and the wafer anglec of rotation, at least one is not mutually equal.
It should be noted that in ion implantation process, the injector angle of ion beam keeps constant, by being noted by batch-type ion
The rotation that the target disc entering machine carries out on certain orientation adjusts so that described monitoring wafer and ion beam have certain ion implanting and incline
Oblique angle.
Need it is further noted that when described six monitoring wafer are carried out ion implanting, except tilted ion implantation angle and
Beyond the possible difference of the anglec of rotation, other ion implanting conditions all should keep consistent.Such as, described six monitoring wafer are carried out
During ion implanting, the energy of each ion implanting should keep consistent with dosage, and described monitoring wafer is placed on the same position of target disc every time
Put.
Concrete, described ion implantation apparatus is batch-type ion implantation apparatus, is provided with support in described batch-type ion implantation apparatus
The target disc of described monitoring wafer；The quantity of described monitoring wafer is six, described six monitoring wafer is put into successively at described batch
Ion implanting is carried out on the target disc of reason formula ion implantation apparatus.
The concrete grammar that described six monitoring wafer carry out ion implanting successively is comprised the following steps:
S11: definition ion beam mutation inclination angle first direction and second direction；As it is shown on figure 3, in the present embodiment, described
One direction and second direction all point to the edge of described monitoring wafer from the center of described monitoring wafer, and described first direction and institute
State second direction vertical；Definition inject when ion beam is injected into described monitoring wafer center with vertical angle described first direction with
Tilted ion implantation angle in described second direction is 0 °, and such as, the surface of ion beam and described monitoring wafer is injected in definition
Time vertical, the tilted ion implantation angle on described first direction with described second direction is 0 °；And distinguish tilted ion implantation
Angle positive and negative；In the present embodiment, definition is injected ion beam and is partial to described first direction or described second direction, and ion implanting is inclined
Oblique angle be designated as on the occasion of；Inject ion beam and be partial to opposite direction or the opposite direction of described second direction, the ion implanting of described first direction
Inclination angle is designated as negative value；It it is the anglec of rotation of described monitor wafer when defining the recess of described monitoring wafer towards the center of described target disc
It it is 0 °；And define the anglec of rotation change be adjusted to direct rotational direction in the counterclockwise direction.
S12: monitoring wafer described in first is put into and carries out ion implanting on the described target disc of described batch-type ion implantation apparatus,
Injecting ion beam is α at the tilted ion implantation angle of described first direction1, it is β at the tilted ion implantation angle of described second direction1,
The anglec of rotation of monitoring wafer described in first is θ1；
S13: second described monitoring wafer is put on the described target disc of described batch-type ion implantation apparatus and carry out ion implanting,
Injecting ion beam is α at the tilted ion implantation angle of described first direction2, it is β at the tilted ion implantation angle of described second direction2,
The anglec of rotation of second described monitoring wafer is θ2；
S14: the 3rd described monitoring wafer is put into and carries out ion implanting on the described target disc of described batch-type ion implantation apparatus,
Injecting ion beam is α at the tilted ion implantation angle of described first direction3, it is β at the tilted ion implantation angle of described second direction3,
The anglec of rotation of the 3rd described monitoring wafer is θ3；
S15: the 4th described monitoring wafer is put into and carries out ion implanting on the described target disc of described batch-type ion implantation apparatus,
Injecting ion beam is α at the tilted ion implantation angle of described first direction4, it is β at the tilted ion implantation angle of described second direction4,
The anglec of rotation of the 4th described monitoring wafer is θ4；
S16: the 5th described monitoring wafer is put into and carries out ion implanting on the described target disc of described batch-type ion implantation apparatus,
Injecting ion beam is α at the tilted ion implantation angle of described first direction5, it is β at the tilted ion implantation angle of described second direction5,
The anglec of rotation of the 5th described monitoring wafer is θ5；
S17: the 6th described monitoring wafer is put into and carries out ion implanting on the described target disc of described batch-type ion implantation apparatus,
Injecting ion beam is α at the tilted ion implantation angle of described first direction6, it is β at the tilted ion implantation angle of described second direction6,
The anglec of rotation of described 6th monitoring wafer is θ6。
Concrete, the note of the ion on described first direction and second direction when described six monitoring wafer being carried out ion implanting
The size entering the size at inclination angle and the anglec of rotation of described monitoring wafer can be adjusted according to practical situation；Preferably,
α1～α6, β1～β6Span be more than or equal to-2 ° less than or equal to 2 °；θ1～θ6Value be 0 °, 90 °, 180
° or 270 °；It is further preferable that in the present embodiment, α1=-1 °, α3=1 °, α2=α4=α5=α6=0 °；β1=β2=β3=β4=β5=β6=0
°；θ1=θ2=θ3=0 °, θ4=90 °, θ5=180 °, θ6=270 °.
It should be noted that described six monitoring wafer come from same silicon ingot, it is preferable that described six monitoring wafer from
In the same area of same silicon ingot, to guarantee described monitoring wafer concordance in performance parameter, such as uniform orientation.
Perform step S2, refer to the S2 step 2 in Fig. 2, the described monitoring wafer that employing heat wave measurement ion implanting completes
Surface, to obtain heat wave value, judges the accuracy at ion implanting angle according to described heat wave value.
Judge that according to described heat wave value the concrete grammar of the accuracy at ion implanting angle comprises the following steps:
S21: the center defining described monitoring wafer is coordinate center, and distinguish the point in described monitoring wafer to described coordinate center
Distance positive and negative；In the present embodiment, the distance apart from described coordinate center of the point along described first direction or described second direction
Be designated as on the occasion of, along the opposite direction of described first direction or described second direction in the reverse direction point apart from described coordinate center away from
From being designated as negative value.
S22: with heat wave value as vertical coordinate, the distance of the point in monitoring wafer to monitoring wafer center is that vertical coordinate simulates respectively
A piece of, second, the 3rd and the 5th described monitoring wafer are at second direction and the parabola of in the reverse direction thereof, and ask respectively
Going out described parabolical axis of symmetry, described axis of symmetry is the axis of symmetry represented with distance；
S23: calculate first, second and the 3rd described monitoring wafer respectively in described second direction and the heat of in the reverse direction thereof
The meansigma methods of wave number, with described meansigma methods as vertical coordinate, tilted ion implantation angle be abscissa simulate respectively first, second
Sheet and the comprehensive parabola of the 3rd described monitoring wafer, and obtain described comprehensive parabolical axis of symmetry, described axis of symmetry be with
The axis of symmetry that angle represents；
S24: with heat wave value as vertical coordinate, the distance of the point in monitoring wafer to monitoring wafer center is that vertical coordinate simulates respectively
Four and the 6th described monitoring wafer are at described first direction and the parabola of in the reverse direction thereof, and obtain described parabola respectively
Axis of symmetry, described axis of symmetry is the axis of symmetry represented with angle；
S25: by described to be separately converted to the axis of symmetry represented with angle apart from the axis of symmetry represented；
Parabolical corresponding with the 6th described monitoring wafer of parabolical axis of symmetry corresponding to S26: the four described monitoring wafer
The half of axis of symmetry sum is described monitoring wafer lattice deviation angle in said first direction；First is to described in the 3rd
Comprehensive parabolical axis of symmetry and the difference of described monitoring wafer lattice deviation angle in said first direction that monitoring wafer is corresponding are
For injecting ion beam tilted ion implantation angle in said first direction；Corresponding parabolical right of second described monitoring wafer
The half claiming parabolical axis of symmetry sum corresponding to axle and the 5th described monitoring wafer is described monitoring wafer described second
Lattice deviation angle on direction；Parabolical axis of symmetry corresponding to second described monitoring wafer and described monitoring wafer are described the
The difference of the lattice deviation angle on two directions is injection ion beam tilted ion implantation angle in this second direction.
Concrete, owing to there is cone angle effect when monitoring wafer is positioned on the target disc of batch-type ion implantation apparatus and carries out ion implanting
Should, i.e. it is injected between the ion beam of same wafer center and peripheral and there is certain cone angle, therefore, by first to the 6th
The axis of symmetry that distance described in sheet represents is converted into the axis of symmetry that angle represents and can be realized by below equation:Wherein,
δ is cone angle, and R is the radius of described monitoring wafer, and γ is the axis of symmetry represented with angle, and L is the axis of symmetry represented with distance；
As a example by batch-type ion implantation apparatus conventional in existing semiconductor technology and the wafer of diameter 300mm, above-mentioned formula is all right
It is expressed as
For the ease of being better understood from, it is exemplified below, takes six described monitoring wafer, at batch-type ion implantation apparatus
In the case of normal range, use energy is 40～3000Kev and dosage range is 5E12～1E14 atom/cm2Boron ion
Or phosphonium ion carries out ion implanting, wherein, α to described six monitoring wafer successively1=-1 °, α3=1 °, α2=α4=α5=α6=0 °；
β1=β2=β3=β4=β5=β6=0 °；θ1=θ2=θ3=0 °, θ4=90 °, θ5=180 °, θ6=270 °；Inject ions into
Described six monitoring wafer carry out heat wave measurement, enter the heat wave value of obtained described six monitoring wafer by S22～S25 step
Row processes, obtained parabola unification formula Y=Ax2+ Bx+c represents, then obtained first is to the 6th described prison
The parabola surveying wafer is as shown in table 1 with the comprehensive parabolical related data of the described monitoring wafer of first to the 3rd slice.
Table 1
| A | B | C | The axis of symmetry that distance represents | The axis of symmetry that angle represents | |
| First | 0.0022 | 0.2778 | 926.169 | -64.2597 | -0.5012 |
| Second | 0.0022 | 0.2795 | 866.181 | -63.2558 | -0.4934 |
| 3rd | 0.0018 | 0.2105 | 908.764 | -58.4318 | -0.4558 |
| 4th | 0.0031 | 0.0906 | 861.701 | -14.6615 | -0.1144 |
| 5th | 0.0028 | 0.1649 | 858.349 | -28.9586 | -0.2259 |
| 6th | 0.0027 | -0.0509 | 862.825 | 9.5046 | 0.0741 |
| The first to three comprehensive | 49.6913 | -9.9655 | 881.671 | 0.1003 |
According to the data of table 1, the monitoring result obtained after being compared by step S26 is as shown in table 2.
Table 2
As shown in Table 2, in actual ion implantation process, it is accurate that the lattice skew that wafer itself exists is understood monitoring result
Property produce large effect.Therefore, the monitoring method using the ion implantation angle of the present invention can get rid of lattice skew effectively
Impact so that the result of monitoring has higher accuracy.
In sum, the present invention provides monitoring method of a kind of ion implantation angle and preparation method thereof, and the present invention is by ion
Different monitoring wafer is made to have different tilted ion implantation angles or the anglec of rotation, and the monitoring wafer that will obtain during injection
Compare after carrying out heat wave measurement, effectively eliminate the impact of lattice skew so that the result of monitoring has higher
Accuracy；Meanwhile, whole monitoring process has only to six monitoring wafer are carried out ion implanting and heat wave measure analysis, significantly saves
Save the time and the cost of measurement measured.
The principle of above-described embodiment only illustrative present invention and effect thereof, not for limiting the present invention.Any it is familiar with this skill
Above-described embodiment all can be modified under the spirit and the scope of the present invention or change by the personage of art.Therefore, such as
All that in art, tool usually intellectual is completed under without departing from disclosed spirit and technological thought etc.
Effect is modified or changes, and must be contained by the claim of the present invention.
Claims (10)
1. the monitoring method of an ion implantation angle, it is characterised in that: comprise the following steps:
Thering is provided multi-disc monitoring wafer, described monitoring wafer is respectively provided with a recess；
Ion implanting is carried out in described monitoring wafer is sequentially placed into ion implantation apparatus；In ion implantation process, described monitoring wafer
There is certain tilted ion implantation angle and the wafer anglec of rotation；Wherein, the described ion implanting of monitoring wafer described in any two panels is inclined
In oblique angle and the wafer anglec of rotation, at least one is not mutually equal；
Use heat wave to measure the surface of the described monitoring wafer that ion implanting completes, to obtain heat wave value, judge according to described heat wave value
The accuracy at ion implanting angle.
The monitoring method of ion implantation angle the most according to claim 1, it is characterised in that: use batch-type ion implantation apparatus
Described monitoring wafer is carried out ion implanting, in described batch-type ion implantation apparatus, is provided with the target supporting described monitoring wafer
Dish.
The monitoring method of ion implantation angle the most according to claim 2, it is characterised in that: the quantity of described monitoring wafer is six
Described six monitoring wafer are carried out ion implanting by sheet successively method particularly includes:
Definition ion beam mutation inclination angle first direction and second direction；Definition is injected ion beam and is injected into described prison with vertical angle
It is 0 ° with the tilted ion implantation angle in second direction in a first direction when surveying center wafer；And distinguish tilted ion implantation angle
Positive and negative；The anglec of rotation of definition monitoring wafer；It is described when defining the recess of described monitoring wafer towards the center of described target disc
The anglec of rotation of monitor wafer is 0 °；And define the anglec of rotation change be adjusted to direct rotational direction in the counterclockwise direction.
Carry out ion implanting in the described monitoring wafer of first to the 6th slice is sequentially placed into described batch-type ion implantation apparatus, from
In sub-injection process, the tilted ion implantation angle with second direction in a first direction of monitoring wafer described in first is respectively α1And β1,
The anglec of rotation is θ1；Second described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α2And β2,
The anglec of rotation is θ2；3rd described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α3And β3,
The anglec of rotation is θ3；4th described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α4And β4,
The anglec of rotation is θ4；5th described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α5And β5,
The anglec of rotation is θ5；6th described monitoring wafer tilted ion implantation angle with second direction in a first direction is respectively α6And β6,
The anglec of rotation is θ6。
The monitoring method of ion implantation angle the most according to claim 3, it is characterised in that: described first direction and second direction
All point to the edge of described monitoring wafer from the center of described monitoring wafer, and described first direction hangs down with described second direction
Directly；Inject ion beam and be partial to described first direction or described second direction, tilted ion implantation angle be designated as on the occasion of；Inject ion
Bundle is partial to opposite direction or the opposite direction of described second direction of described first direction, and tilted ion implantation angle is designated as negative value.
The monitoring method of ion implantation angle the most according to claim 3, it is characterised in that: α1～α6, β1～β6Span
It is more than or equal to-2 ° less than or equal to 2 °；θ1～θ6Value be 0 °, 90 °, 180 ° or 270 °.
The monitoring method of ion implantation angle the most according to claim 5, it is characterised in that: α1=-1 °, α3=1 °,
α2=α4=α5=α6=0 °；β1=β2=β3=β4=β5=β6=0 °；θ1=θ2=θ3=0 °, θ4=90 °, θ5=180 °, θ6=270 °.
The monitoring method of ion implantation angle the most according to claim 3, it is characterised in that: judge ion according to described heat wave value
The accuracy of injector angle method particularly includes:
The center defining described monitoring wafer is coordinate center, and distinguishes the point in described monitoring wafer to described coordinate centre distance
Positive and negative；
With heat wave value as vertical coordinate, the distance of the point in monitoring wafer to monitoring wafer center be vertical coordinate simulate respectively first,
Second, the 3rd and the 5th described monitoring wafer are at second direction and the parabola of in the reverse direction thereof, and obtain described respectively
Parabolical axis of symmetry；
Calculate first, second and the 3rd described monitoring wafer heat wave value in described second direction and in the reverse direction thereof respectively
Meansigma methods, with described meansigma methods as vertical coordinate, tilted ion implantation angle is that abscissa simulates first, second and respectively
The comprehensive parabola of three described monitoring wafer, and obtain described comprehensive parabolical axis of symmetry；
With heat wave value as vertical coordinate, the distance of the point in monitoring wafer to monitoring wafer center be vertical coordinate simulate respectively the 4th and
6th described monitoring wafer is at described first direction and the parabola of in the reverse direction thereof, and obtains described parabolical symmetry respectively
Axle；
First is the axis of symmetry represented with distance to the parabolical axis of symmetry that the 6th described monitoring wafer is corresponding, by described with
The axis of symmetry that distance represents is separately converted to the axis of symmetry represented with angle；
The parabolical symmetry that parabolical axis of symmetry corresponding to the 4th described monitoring wafer is corresponding with the 6th described monitoring wafer
The half of axle sum is described monitoring wafer lattice deviation angle in said first direction；First is to the 3rd described monitoring
Comprehensive parabolical axis of symmetry and the difference of described monitoring wafer lattice deviation angle in said first direction that wafer is corresponding are note
Enter ion beam tilted ion implantation angle in said first direction；The parabolical axis of symmetry that second described monitoring wafer is corresponding
The half of the parabolical axis of symmetry sum corresponding with the 5th described monitoring wafer is described monitoring wafer in described second direction
On lattice deviation angle；Parabolical axis of symmetry corresponding to second described monitoring wafer with described monitoring wafer in described second party
The difference of lattice deviation angle upwards is injection ion beam tilted ion implantation angle in this second direction.
The monitoring method of ion implantation angle the most according to claim 7, it is characterised in that: along described first direction or described
The point distance apart from described coordinate center on two directions be designated as on the occasion of, along opposite direction or the described second party of described first direction
To the some distance apart from described coordinate center of in the reverse direction be designated as negative value.
The monitoring method of ion implantation angle the most according to claim 7, it is characterised in that: the axis of symmetry that described distance is represented
The formula being converted into the axis of symmetry that angle represents is:Wherein, δ is cone angle, and R is the radius of described monitoring wafer,
γ is the axis of symmetry represented with angle, and L is the axis of symmetry represented with distance.
The monitoring method of ion implantation angle the most according to claim 1, it is characterised in that: described six monitoring wafer have phase
Same crystal orientation.
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| CN107403740A (en) * | 2017-07-31 | 2017-11-28 | 上海华力微电子有限公司 | A kind of method for determining ion implantation apparatus implant angle deviation |
| CN107993912A (en) * | 2017-11-23 | 2018-05-04 | 上海华力微电子有限公司 | A kind of method for the ion implantation angle for calibrating ion implantation apparatus |
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| CN113496905A (en) * | 2020-03-18 | 2021-10-12 | 芯恩（青岛）集成电路有限公司 | Method for monitoring ion implantation angle |
| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
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| CN113984788A (en) * | 2021-12-24 | 2022-01-28 | 北京凯世通半导体有限公司 | Method for monitoring ultralow temperature ion implantation equipment through optical detection instrument |
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