CN111442729B - A Displacement Sensing Device Based on One-way Coupling Effect of Bloch Surface Waves - Google Patents
A Displacement Sensing Device Based on One-way Coupling Effect of Bloch Surface Waves Download PDFInfo
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- 238000006073 displacement reaction Methods 0.000 title claims abstract description 72
- 230000001808 coupling effect Effects 0.000 title claims abstract description 16
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- 238000005859 coupling reaction Methods 0.000 claims abstract description 18
- 238000000034 method Methods 0.000 claims abstract description 16
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- 238000005516 engineering process Methods 0.000 description 4
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B11/00—Measuring arrangements characterised by the use of optical techniques
- G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
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Abstract
本发明涉及一种基于布洛赫表面波单向耦合效应的位移传感装置，包括泄漏辐射显微系统，所述泄漏辐射显微系统沿光信号走向依次包括激光器、透镜组、偏振片、半玻片、入射物镜、位移平台、收集物镜、收集透镜以及成像相机，所述位移平台上设有位移传感芯片，所述位移传感芯片为布洛赫表面波单向耦合芯片。本发明使用的入射光场简单，无需矢量光束整形，并且布洛赫表面光场消光比随入射光场与芯片的相对位移变化剧烈，使得传感灵敏度和精度高、响应速度快。同时，本发明还提高了量程。另外，本发明使用的布洛赫表面波单向耦合芯片为全介质结构，易储存，重复利用率高，且该芯片容错率高，易于加工，降低了加工难度。
The invention relates to a displacement sensing device based on the one-way coupling effect of Bloch surface waves, including a leakage radiation microscope system, which sequentially includes a laser, a lens group, a polarizer, a semi-conductor, a laser, a lens group, a polarizer, and a half along the direction of an optical signal. A glass slide, an incident objective lens, a displacement platform, a collecting objective lens, a collecting lens and an imaging camera, the displacement platform is provided with a displacement sensing chip, and the displacement sensing chip is a Bloch surface wave unidirectional coupling chip. The incident light field used in the invention is simple, no vector beam shaping is required, and the extinction ratio of the Bloch surface light field changes sharply with the relative displacement of the incident light field and the chip, so that the sensing sensitivity and precision are high and the response speed is fast. At the same time, the present invention also improves the measuring range. In addition, the Bloch surface wave unidirectional coupling chip used in the present invention has an all-dielectric structure, which is easy to store and has high reuse rate, and the chip has a high fault tolerance rate, is easy to process, and reduces the difficulty of processing.
Description
Technical Field
The invention relates to the field of optical sensing, in particular to a displacement sensing device based on a Bloch surface wave unidirectional coupling effect.
Background
Optical metrology and position sensing technology plays a key role in many areas of modern science and technology, such as gravitational wave detection, molecular conformation change sensing, and scanning probe microscopy. Although diffraction limits optical resolution, optical technology still plays a role in many respects due to its non-contact capability. Researchers have implemented deep sub-wavelength displacement sensing using active methods including foster resonance energy transfer and second harmonic methods, and passive methods including conventional macro-interferometers, directional scattering of nano-antennas, near-field interference, local plasmon resonance, electromagnetic field singularities, and optical skyrmions, among others. These methods can provide sub-nanometer level displacement detection, but these methods require high requirements for nanostructure size and incident optical field accuracy, and require complex detection systems to detect weak signals and improve signal-to-noise ratios. And because high displacement sensitivity exists only near the optimal orientation position, the sensitivity of these methods is highly non-linear and range limited (typically less than 50nm, with a sensitivity of 0.05 nm)-1)。
In addition to the above method, the prior art also adopts a device combining a leakage radiation microscope system and a displacement sensing chip to realize the displacement sensing function. The leakage radiation microscopic system comprises a laser, a lens group, a filter, a polaroid, a half-wave plate, an incident objective lens, a displacement platform, a collecting objective lens, a collecting lens, an imaging camera and the like, wherein a displacement sensing chip is a symmetrical chip and is arranged on the displacement platform, and an incident light field of the device is a complex column vector light field which carries phase change and needs to be filtered and shaped.
Disclosure of Invention
In view of the defects of the prior art, the invention provides a displacement sensing device based on the bloch surface wave unidirectional coupling effect, and solves the problems of low sensitivity, small measuring range and complex incident optical field of the conventional displacement sensing device.
The invention provides a displacement sensing device based on a Bloch surface wave unidirectional coupling effect, which comprises a leakage radiation microscope system, wherein the leakage radiation microscope system sequentially comprises a laser, a lens group, a polaroid, a half glass, an incident objective lens, a displacement platform, a collecting objective lens, a collecting lens and an imaging camera along the direction of an optical signal, wherein a displacement sensing chip is arranged on the displacement platform, and the displacement sensing chip is a Bloch surface wave unidirectional coupling chip.
The laser is a super-continuous tunable laser.
The displacement platform is a piezoelectric ceramic displacement platform.
The bloch surface wave unidirectional coupling chip comprises a Bragg reflection unit.
The Bragg reflection unit comprises high-refractive-index dielectric layers and low-refractive-index dielectric layers which are alternately arranged.
And an asymmetric slit structure is arranged in the top layer of the Bragg reflection unit.
And the top layer of the Bragg reflection unit is a low-refractive-index medium defect layer.
The bloch surface wave unidirectional coupling chip also comprises a glass substrate, and the Bragg reflection unit is arranged on the glass substrate.
The asymmetric slit structure includes two single slits.
The two single slits are parallel and opposite and have equal length.
The length of the two single slits is greater than 4 μm.
The width and depth of the two single slits are different.
The invention realizes the displacement sensing technology by utilizing the interaction of the Gaussian optical field and the asymmetric slit structure on the surface of the multilayer dielectric film, the incident optical field is simple, vector beam shaping is not needed, and the extinction ratio of the Bloch surface optical field is violently changed along with the relative displacement of the incident optical field and the chip, so that the sensing sensitivity and precision are high, and the response speed is high. Meanwhile, the displacement sensing device of the invention also improves the measuring range. In addition, the bloch surface wave one-way coupling chip used by the invention is of an all-dielectric structure, is easy to store, has high repeated utilization rate, high fault tolerance rate and easy to process, and reduces the processing difficulty.
Drawings
Fig. 1 is a schematic structural view of a displacement sensing device based on the bloch surface wave unidirectional coupling effect according to the present invention;
FIG. 2 is a schematic diagram of the structure of the bloch surface wave uni-directionally coupled chip of FIG. 1;
FIG. 3 is a cross-sectional view of FIG. 2;
fig. 4(a) -4 (c) are schematic diagrams of the angular spectrum results of FDTD calculation when the relative positions of incident gaussian light and the asymmetric slit structure are changed, and fig. 4(d) -4 (f) are schematic diagrams of the experimental results corresponding to fig. 4(a) -4 (c);
FIG. 5(a) is a schematic diagram showing the results of displacement sensing FDTD simulation, and FIGS. 5(b) and 5(c) are two linear regions extracted from FIG. 5 (a); fig. 5(d) is a diagram showing the experimental result corresponding to fig. 5(a), and fig. 5(e) and 5(f) are diagrams showing the extraction of linear regions at both ends from fig. 5 (d).
Detailed Description
The following description of the preferred embodiments of the present invention, taken in conjunction with the accompanying drawings, will provide a better understanding of the function and features of the invention.
As shown in fig. 1, a displacement sensing apparatus 1 based on the unidirectional coupling effect of bloch surface waves of the present invention includes a leaky radiation microscope system 10 and a Bloch Surface Wave (BSW) unidirectional coupling chip 20 disposed in the system 10. The leakage radiation microscope system 10 includes a laser 101, a lens group 102, a polarizer 103, a half glass 104, an incident objective 105, a piezoceramic displacement platform 106, a collection objective 107, a collection lens 108 and an imaging camera 109 in sequence along the optical signal direction, and the bloch surface wave unidirectional coupling chip 20 is located on the piezoceramic displacement platform 106.
The laser 101 of the present invention is a super-continuous tunable laser, which emits incident gaussian light, and after the incident gaussian light is expanded by the lens assembly 102, the incident gaussian light passes through the polarizer 103 and the half glass 104 to obtain linearly polarized light. Linearly polarized light irradiates an incidence objective lens 105, excites the bloch surface wave unidirectional coupling chip 20 to generate chip signals, meanwhile, a piezoelectric ceramic displacement platform 106 scans the chip to realize a displacement sensing function, and finally, a collection objective lens 107 collects the generated chip signals, and image plane and angular spectrum information of the bloch surface wave unidirectional coupling chip 20 is transmitted to an imaging camera 109 through a collection lens 108. Wherein the wavelength of the incident gaussian light can be varied to enable characterization of BSW at different wavelengths. In addition, the entrance objective lens 105 and the collection objective lens 107 of different models can be replaced, so that the magnification and the numerical aperture are adjustable, and the collection range of the leakage radiation angle (the back focal plane of the collection objective lens 107, which represents the angular spectrum information of the chip 20) is adjustable. Meanwhile, the piezoelectric ceramic displacement platform can be set, so that the scanning position and the scanning range of the piezoelectric ceramic displacement platform can be adjusted. The imaging camera 109 may alternatively be a CCD, CMOS or other type of camera.
As shown in fig. 2 and 3, the bloch surface wave unidirectional coupling chip 20 includes a glass substrate 201, a bragg reflection unit 202, and an asymmetric slit structure 203. The bragg reflection unit 202 is arranged on the glass substrate 201, the asymmetric slit structure 203 is arranged on the top layer 206 of the bragg reflection unit 202, and the bragg reflection unit 202 and the asymmetric double slit structure 203 jointly act to realize unidirectional transmission of the bloch surface wave.
The Bragg reflector 202 is composed of a high refractive index dielectric layer 204 and a low refractive index dielectric layer 205Alternatively, the top layer 206 is a low index dielectric defect layer. The top defect layer 206 directly affects the effective refractive index of the bloch surface wave, the thicker the thickness the higher the effective refractive index of the bloch surface wave and the shorter the wavelength, and the thickness of both the high refractive index dielectric layer and the low refractive index dielectric layer is approximately one quarter of the wavelength of the bloch surface wave. Wherein the high refractive index dielectric layer 204 is made of Si3N4And the thickness is between 75nm and 85 nm; the material of the low-refractive-index dielectric layer 205 is SiO2The thickness is between 95nm and 105 nm; the top defect layer 203 has a thickness of between 320nm and 420 nm. Si3N4And SiO2The thickness of the layer and the top defect layer is adjustable, and the wavelength range of BSW can be adjusted.
Although the number of periodic pairs of the high-index dielectric layer and the low-index dielectric layer does not affect the mode refractive index of the bloch surface wave, it affects its local performance, with more periodic pairs giving better local performance and vice versa. Therefore, in order to balance the local area and leakage of the bloch surface wave, so that it can maintain the excellent local area performance, and can be leaked to the far field to observe the phenomenon conveniently, the bragg reflection unit 202 of the present invention is provided with 18 layers in total.
The asymmetric double-slit structure 203 is composed of two parallel single slits which are opposite to each other, and the two single slits have the same length, but different widths and depths. The incident light of the invention is polarized Gaussian light, and the beam waist radius of the incident light field is about 2 μm, so the length of the two slits needs to be more than 4 μm.
Two asymmetric single slits can respectively excite the Bloch surface wave to realize the unidirectional coupling of the Bloch surface wave, and the Bloch surface waves excited by the two slits satisfy the following conditions: the amplitudes are approximately equal, the initial phase difference is pi/2, and the central distance d between the two slits satisfies kBSWX d is pi/2, wherein k isBSWThe Bloch surface wave vector is expressed, so that the BSW unidirectional transmission condition is met, the phases of all points of the Gaussian optical field are the same under the condition that the beam waist radius of the Gaussian optical field is larger, and no additional phase factor is introduced, so that the BSW unidirectional transmission can be realized. And the amplitude and phase of the slit-excited Bloch surface wave are dependent on the slit widthThe degree and depth are different, so the width and depth of the two slits need to be adjusted to satisfy the condition of unidirectional coupling of the bloch surface wave.
In the present embodiment, one of the slits has a width of between 510nm and 550nm and a depth of between 380nm and 420 nm; the width of the other slit is between 210nm and 250nm, and the depth is between 70nm and 110 nm. According to actual conditions and requirements, the width, the depth and the center distance of two single slits of the asymmetric slit structure 203 can be adjusted, so that the BSW unidirectional transmission within a specified wavelength range is realized.
The principle of the invention for realizing the displacement sensing function is as follows: the bloch surface wave unidirectional coupling chip 20 can realize the unidirectional transmission of the bloch surface wave, the chip 20 is placed in the piezoelectric displacement platform 106, and the piezoelectric displacement platform 106 is moved due to the fixation of the incident gaussian optical field, and the chip 20 moves along the slit width direction of the asymmetric slit structure 203 relative to the gaussian optical field. For example, if the gap center of two single slits is 0, the chip 20 can move from-1 um to +1um along with the piezoelectric displacement platform 106 in the slit width direction. At the moment, the unidirectional transmission function of the Bloch surface optical field is changed, and the extinction ratio of the Bloch surface optical field is also changed. Extinction ratio R ═ Ir/IlWherein, IrAnd IlThe intensity of the optical field is expressed (see fig. 4(a)), and thus the displacement change can be judged from the change in the extinction ratio of the optical field of the bloch surface. Conversely, the relative displacement between the gaussian light field and the chip 20 can be determined by the extinction ratio. The performance of the displacement sensing device is determined by indexes such as sensitivity, resolution, measuring range and the like, in the invention, the extinction ratios of the bloch surface optical fields obtained under different incident light wavelengths are different, and the higher the extinction ratio is, the higher the sensitivity of the displacement sensing device is, but the best performance of the indexes such as resolution, measuring range and the like is not represented. According to different application scenarios, the tunable laser 101 is used for controlling the incident wavelength to achieve different sensitivity, resolution and range indexes, and the optimal displacement sensing function is achieved.
In a preferred embodiment of the present invention, the entrance objective 105 is configured to: magnification 10x, numerical aperture 0.3, collection objective 107 set to: magnification timesNumber 100x, numerical aperture 1.49. The Bragg reflector 202 is made of Si3N4Layer thickness 80nm, SiO2The layer thickness is 100nm and the top defect layer 206 has a thickness of 390 nm. The length of the two single slits in the asymmetric slit structure 203 is 20 μm, the width is 530nm and 400nm respectively, the depth is 230nm and 90nm respectively, and the center distance between the two single slits is 755 nm.
The theoretical results and the experimental results are shown in fig. 4 and 5. Fig. 4(a) to 4(c) show angular spectrum results of FDTD calculation when the relative position of the incident gaussian and the asymmetric slit structure is changed, fig. 4(d) to 4(f) show experimental results corresponding to fig. 4(a) to 4(c), wherein each numerical value in the graphs shows the relative displacement between the center of the gaussian and the center of the asymmetric slit structure, and the white arrow shows the polarization direction of the incident gaussian.
FIG. 5 is a diagram similar to FIG. 4, in which the position of the incident Gaussian light field is kept unchanged, the chip moves along with the displacement platform, the center of the asymmetric slit is taken as a 0 point, scanning is performed from-1 um to +1um, a graph is scanned every 10nm, and the right part I of each graph is scannedrIntensity and left part intensity IlThe ratio is performed to obtain a point in the curve, which is shifted by 201 positions. FIG. 5(a) is the corresponding displacement sensing FDTD simulation results, FIG. 5(b) is the linear region from-450 nm to-350 nm extracted from FIG. 5(a), and FIG. 5(c) is the linear region from-200 nm to-100 nm extracted from FIG. 5 (a); FIG. 5(d) shows the corresponding experimental results of FIG. 5(a), FIG. 5(e) shows the linear region of-720 nm to-420 nm extracted from FIG. 5(d), and FIG. 5(f) shows the linear region of 0 to 300nm extracted from FIG. 5 (d).
FIGS. 4(a) -C are rear focal plane (angular spectrum) images of three positions (-1000nm position, peak position-280 nm, and +1000nm position) in FIG. 5(a), and FIGS. 4(d) -4 (f) are rear focal plane (angular spectrum) images of three positions (-1000nm position, peak position-150 nm, and +1000nm position) in FIG. 5 (d). Due to errors in sample preparation data collection, theories and experiments differ in both peak size and position.
This example finally theoretically gives a sensitivity of 2.71nm-1The resolution is 3nm, and the measuring range is 100 nm; the sensitivity obtained by the experiment is 0.122nm-1Resolution of 6nm, amountThe range is 300 nm. Optimum sensitivity to the prior art is 0.05nm-1Compared with the displacement sensing device with the range of 50nm, the displacement sensing device based on the unidirectional coupling effect of the Bloch surface wave has improved range and sensitivity.
The above embodiments are merely preferred embodiments of the present invention, which are not intended to limit the scope of the present invention, and various changes may be made in the above embodiments of the present invention. All simple and equivalent changes and modifications made according to the claims and the content of the specification of the present application fall within the scope of the claims of the present patent application. The invention has not been described in detail in order to avoid obscuring the invention.
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| CN114577121B (en) * | 2022-05-09 | 2022-09-06 | 中国科学技术大学 | A detection device based on surface wave orientation to detect the morphology of nanowires in subwavelength dielectrics |
| CN115164741B (en) * | 2022-07-27 | 2025-06-13 | 浙江理工大学 | A distance measurement system based on vector light field |
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