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CN111403315A - Wafer trimming device and method - Google Patents

Wafer trimming device and method Download PDF

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CN111403315A
CN111403315A CN202010141588.8A CN202010141588A CN111403315A CN 111403315 A CN111403315 A CN 111403315A CN 202010141588 A CN202010141588 A CN 202010141588A CN 111403315 A CN111403315 A CN 111403315A
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wafer
rectangle
length
cutter head
tool bit
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CN111403315B (en
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曹玉荣
李虎
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Shanghai Huali Integrated Circuit Manufacturing Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67288—Monitoring of warpage, curvature, damage, defects or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors

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Abstract

本发明公开了一种晶圆切边装置，包括：晶圆放置平台；呈圆环形结构的刀头，圆环结构的外圈表面为切割表面；在朝切割表面的侧视方向上，刀头的侧面呈由第一矩形和第二矩形拼接而成的多边形结构；第一矩形的长度小于等于第二矩形的长度；切割时，第一矩形的长度边和晶圆的第一表面垂直，第一矩形的底部的宽度边和晶圆接触；实时测量装置，用于实时测量所述刀头的第一矩形的长度；切割深度校正装置，用于根据实时测量的第一矩形的长度以及刀头中心轴和晶圆表面之间的距离自动校正切割深度。本发明还公开了一种晶圆切边方法。本发明能对刀头的磨耗进行实时测量以及对切割深度进行自动校正，从而能提高切边质量，提高不同晶圆之间的切边深度的均匀性。

Figure 202010141588

The invention discloses a wafer edge trimming device, comprising: a wafer placement platform; a cutter head in the form of a circular ring structure, and the outer ring surface of the circular structure is a cutting surface; The side of the head is a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; when cutting, the length side of the first rectangle is perpendicular to the first surface of the wafer, The width side of the bottom of the first rectangle is in contact with the wafer; the real-time measurement device is used to measure the length of the first rectangle of the cutter head in real time; the cutting depth correction device is used to measure the length of the first rectangle in real time and the cutter The distance between the center axis of the head and the wafer surface automatically corrects the depth of cut. The invention also discloses a wafer edge trimming method. The invention can measure the wear of the cutter head in real time and automatically correct the cutting depth, thereby improving the quality of the cutting edge and improving the uniformity of the cutting edge depth between different wafers.

Figure 202010141588

Description

晶圆切边装置和方法Wafer trimming device and method

技术领域technical field

本发明涉及半导体集成电路制造领域，特别涉及一种晶圆切边装置。本发明还涉及一种晶圆切边方法。The invention relates to the field of semiconductor integrated circuit manufacturing, in particular to a wafer edge trimming device. The present invention also relates to a wafer edge trimming method.

背景技术Background technique

切边(Trim)工艺(process)是背照式(BSI)工艺如BSI图像传感器工艺中一道重要的工艺，是将晶圆2(wafer)边缘特定深宽的一圈用刀头1切掉。如图1A所示，是现有晶圆2切边方法中的刀头1的立体结构图；刀头1，在沿中心轴方向上所述刀头呈圆环形结构；其中最外侧的圆环对应的侧面为切割表面1a，但是仅有部分厚度的切割表面1a用于切割。如图1B所示，是现有晶圆2切边方法进行切边时刀头1和晶圆2的结构示意图；可以看出，刀头1的侧视图对应于切割表面1a的侧视图，图1B中的刀头1为还未进行任何切割从而没有磨耗的原始结构，在虚线圈101所示区域中，刀头1会对晶圆2进行切割。如图1C所示，是现有晶圆2切边方法切边完成后的晶圆2边缘结构图，可以看出，在虚线圈102对应的边缘区域中，所述晶圆2的硅材料被切割掉。The trimming process is an important process in the backside illuminated (BSI) process such as the BSI image sensor process. As shown in FIG. 1A , it is a three-dimensional structural view of the cutter head 1 in the conventional wafer 2 edge trimming method; the cutter head 1, the cutter head is in the shape of a circular ring along the direction of the central axis; wherein the outermost circle The corresponding side of the ring is the cutting surface 1a, but only a partial thickness of the cutting surface 1a is used for cutting. As shown in FIG. 1B , it is a schematic structural diagram of the cutter head 1 and the wafer 2 when the existing wafer 2 edge trimming method performs edge trimming; it can be seen that the side view of the cutter head 1 corresponds to the side view of the cutting surface 1a. The cutter head 1 in 1B is an original structure that has not been cut and thus has no wear. In the area shown by the dotted circle 101 , the cutter head 1 will cut the wafer 2 . As shown in FIG. 1C , which is the edge structure diagram of the wafer 2 after the edge trimming of the existing wafer 2 edge trimming method, it can be seen that in the edge area corresponding to the dotted circle 102 , the silicon material of the wafer 2 is cut out.

由于切边是通过刀头1对晶圆2进行摩擦作用实现的，故随着切边的进行，刀头1在和晶圆2接触的位置处产生磨耗，磨耗后，刀头1和晶圆2接触区域的半径会减小，在刀头1所能切割的深度也会减少，也即在刀头1的中心轴AA和晶圆2的表面之间的间距不变时，刀头1的磨耗后所能切割的深度会变浅。Since the edge trimming is achieved by the friction effect of the cutter head 1 on the wafer 2, as the edge trimming proceeds, the cutter head 1 wears at the position where it contacts the wafer 2. After the abrasion, the cutter head 1 and the wafer 2. The radius of the contact area will be reduced, and the depth that can be cut by the cutter head 1 will also be reduced, that is, when the distance between the central axis AA of the cutter head 1 and the surface of the wafer 2 is constant, the The depth that can be cut becomes shallower after abrasion.

为了防止刀头1磨耗后对切割深度的影响，现有方法中，刀头1的磨耗量通过刀头切割设定(ChopperCutSetup，CCS)工艺来监测，如图2A所示，是现有晶圆切边方法的CCS切割时立体结构示意图；CCS是在监测用的硅片201上用刀头1在特定位置切下去特定的深度,图2B为图2A对应的左视图，图2B中，示意出了刀头1的切割深度d，还示意出了刀头1的高度，刀头1的高度是通过中心轴AA和切边装置的顶部结构202之间的距离Z0表示。由图2B所示可知，当切割硅片201的刀头1的切割表面1a的直径或半径一致时，所切割处的凹槽的宽度和切割面的半径相关，也即通过切割处的凹槽的宽度即可得到切割表面1a的半径。如图2C所示，是图2A对晶圆切割完成后进行切割长度测量的示意图；标记203对应于切割形成的凹槽，在凹槽203上对应的长度L0即可得到对应的切割深度d。In order to prevent the impact on the cutting depth after the cutter head 1 is worn out, in the existing method, the wear amount of the cutter head 1 is monitored by the cutter head cutting setup (ChopperCutSetup, CCS) process, as shown in FIG. 2A , it is an existing wafer Schematic diagram of the three-dimensional structure during CCS cutting of the edge trimming method; CCS is to cut a specific depth with a cutter head 1 on a silicon wafer 201 for monitoring at a specific position. Fig. 2B is the left side view corresponding to Fig. 2A, and Fig. 2B shows The cutting depth d of the cutter head 1 is also shown, and the height of the cutter head 1 is also indicated. The height of the cutter head 1 is represented by the distance Z0 between the central axis AA and the top structure 202 of the edge trimming device. As shown in FIG. 2B , when the diameter or radius of the cutting surface 1a of the cutter head 1 for cutting the silicon wafer 201 is the same, the width of the groove at the cutting position is related to the radius of the cutting surface, that is, the groove at the cutting position is passed through. The width of the cutting surface 1a can be obtained. As shown in FIG. 2C , it is a schematic diagram of measuring the cutting length after the wafer is cut in FIG. 2A ; the mark 203 corresponds to the groove formed by cutting, and the corresponding length L0 on the groove 203 can obtain the corresponding cutting depth d.

由于CCS监测中，硅片201和顶部结构202之间的间距和实际切边的晶圆2和顶部结构202之间的间距并不相同，故从硅片201上形成的切割深度d要进行校正才能得到晶圆2上的准确的切割深度，如图2D所示，是现有晶圆切边方法的CCS的切割深度校正测量的结构示意图，校正距离为H0-Ha，距离H0为通过距离传感器204测量出来的硅片201和顶部结构202之间的间距，距离Ha则为晶圆2和顶部结构202之间的间距。由于H0大于Ha，故硅片201的表面比晶圆2的表面更低，这样在晶圆2上形成的凹槽的深度会比在硅片201上形成的深度深H0-Ha，也即在晶圆2上的切割深度需要在d的基础上增加校正距离即(H0-Ha)。Since the distance between the silicon wafer 201 and the top structure 202 in CCS monitoring is not the same as the distance between the actual edge-cut wafer 2 and the top structure 202, the cutting depth d formed from the silicon wafer 201 needs to be corrected Only then can the accurate cutting depth on the wafer 2 be obtained. As shown in Figure 2D, it is a schematic structural diagram of the cutting depth correction measurement of CCS in the existing wafer trimming method. The correction distance is H0-Ha, and the distance H0 is the passing distance sensor. The distance between the silicon wafer 201 and the top structure 202 is measured by 204 , and the distance Ha is the distance between the wafer 2 and the top structure 202 . Since H0 is greater than Ha, the surface of the silicon wafer 201 is lower than the surface of the wafer 2, so that the depth of the groove formed on the wafer 2 will be deeper than the depth H0-Ha formed on the silicon wafer 201, that is, in the The cutting depth on wafer 2 needs to increase the correction distance (H0-Ha) on the basis of d.

现有方法中，由于CCS监测需要采用额外的硅片201并进行相应的测试，测试时间和成本都比较高，故现有方法不能做到在每片晶圆2切边完成后都进行CCS监测。也即一次CCS监测到下一次CCS监测之间会进行多片晶圆2的切边，在这些晶圆2的切边过程中，每一片晶圆2切边完成后都会对的刀头1对应的切割表面1a产生一定的磨耗，这会使得随着切边的不断进行，后面的晶圆2的切割深度会不断降低，使得后面的晶圆2的切割深度不符合要求。In the existing method, since CCS monitoring needs to use additional silicon wafers 201 and perform corresponding tests, the test time and cost are relatively high, so the existing method cannot perform CCS monitoring after each wafer 2 is trimmed. . That is to say, multiple wafers 2 will be trimmed between one CCS monitoring and the next CCS monitoring. During the trimming process of these wafers 2, each wafer 2 will be corresponding to the cutter head 1 after the trimming is completed. The cutting surface 1a of the cutting surface 1a produces a certain amount of wear, which will cause the cutting depth of the subsequent wafer 2 to decrease continuously as the edge trimming continues, so that the cutting depth of the subsequent wafer 2 does not meet the requirements.

发明内容SUMMARY OF THE INVENTION

本发明所要解决的技术问题是提供一种晶圆切边装置，能对刀头的磨耗进行实时测量以及对切割深度进行自动校正，从而能提高切边质量，提高不同晶圆之间的切边深度的均匀性。为此，本发明还提供一种晶圆切边方法。The technical problem to be solved by the present invention is to provide a wafer trimming device, which can measure the wear of the cutter head in real time and automatically correct the cutting depth, thereby improving the trimming quality and the trimming between different wafers. uniformity of depth. To this end, the present invention also provides a wafer edge trimming method.

为解决上述技术问题，本发明提供的晶圆切边装置包括：In order to solve the above-mentioned technical problems, the wafer edge trimming device provided by the present invention includes:

晶圆放置平台，用于放置晶圆。Wafer placement platform for placing wafers.

刀头，在沿中心轴方向上所述刀头呈圆环形结构，所述圆环结构的外圈表面为切割表面。The cutter head has an annular structure along the direction of the central axis, and the outer ring surface of the annular structure is the cutting surface.

在朝所述切割表面的侧视方向上，所述刀头的侧面呈由第一矩形和第二矩形拼接而成的多边形结构；所述第一矩形的长度小于等于所述第二矩形的长度；所述第一矩形的宽度和所述第二矩形的宽度和等于所述刀头的厚度；切割时，所述第一矩形的长度边和所述晶圆的第一表面垂直，所述第一矩形的底部的宽度边和所述晶圆接触；所述第一矩形的长度为实际切割所述晶圆的所述刀头的直径，随着切割时间增加所述刀头会产生磨耗并会使所述第一矩形的长度减小；所述第二矩形的长度为所述刀头的初始直径。In the side view direction toward the cutting surface, the side surface of the cutter head has a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle ; The width of the first rectangle and the width of the second rectangle are equal to the thickness of the cutter head; when cutting, the length side of the first rectangle is perpendicular to the first surface of the wafer, and the first rectangle is perpendicular to the first surface of the wafer. The width side of the bottom of a rectangle is in contact with the wafer; the length of the first rectangle is the diameter of the cutter head that actually cuts the wafer, and the cutter head will wear and tear as the cutting time increases. The length of the first rectangle is reduced; the length of the second rectangle is the initial diameter of the cutter head.

实时测量装置，用于实时测量所述刀头的第一矩形的长度。A real-time measuring device is used to measure the length of the first rectangle of the cutter head in real time.

切割深度校正装置，用于根据所述实时测量装置测量的所述第一矩形的长度以及所述刀头的中心轴和所述晶圆的表面之间的距离自动校正切割深度。The cutting depth correction device is used for automatically correcting the cutting depth according to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the cutter head and the surface of the wafer.

进一步的改进是，所述实时测量装置包括光源和成像装置。A further improvement is that the real-time measurement device includes a light source and an imaging device.

在沿中心轴方向上，所述光源和所述成像装置分别设置在所述刀头的两侧，所述光源发射的平行光从第一侧垂直照射所述刀头对应的侧面，所述平行光的范围大于所述刀头的初始直径；所述成像装置从第二侧接收所述光源的光并形成所述刀头的侧面像，根据所述刀头的侧面像得到所述第一矩形的长度。In the direction along the central axis, the light source and the imaging device are respectively arranged on two sides of the cutter head, and the parallel light emitted by the light source vertically illuminates the corresponding side surface of the cutter head from the first side, and the parallel light The range of light is greater than the initial diameter of the cutter head; the imaging device receives the light of the light source from the second side and forms a profile image of the cutter head, and the first rectangle is obtained according to the profile image of the cutter head length.

进一步的改进是，所述实时测量装置和电脑相连，所述刀头的侧面像实时发送到所述电脑上，通过所述电脑测量所述刀头的侧面像上的第一矩形的长度。A further improvement is that the real-time measuring device is connected to a computer, the profile image of the cutter head is sent to the computer in real time, and the length of the first rectangle on the profile image of the cutter head is measured by the computer.

进一步的改进是，所述实时测量装置在每一片所述晶圆的切边完成后测量所述刀头的第一矩形的长度。A further improvement is that the real-time measuring device measures the length of the first rectangle of the cutter head after the edge trimming of each wafer is completed.

进一步的改进是，所述切割深度校正装置由所述电脑实现。A further improvement is that the cutting depth correction device is realized by the computer.

进一步的改进是，所述刀头的中心轴和所述晶圆的表面之间的距离通过调节所述中心轴的高度调节；或者，所述刀头的中心轴和所述晶圆的表面之间的距离通过调节所述晶圆放置平台的高度调节；或者，所述刀头的中心轴和所述晶圆的表面之间的距离通过调节所述中心轴的高度调节和所述晶圆放置平台的高度调节。A further improvement is that the distance between the central axis of the cutter head and the surface of the wafer is adjusted by adjusting the height of the central axis; or, the distance between the central axis of the cutter head and the surface of the wafer is adjusted. The distance between the two is adjusted by adjusting the height of the wafer placement platform; or, the distance between the center axis of the tool head and the surface of the wafer is adjusted by adjusting the height of the center axis and the wafer placement Height adjustment of the platform.

为解决上述技术问题，本发明提供的晶圆切边方法包括如下步骤：In order to solve the above-mentioned technical problems, the wafer edge trimming method provided by the present invention comprises the following steps:

步骤一、将晶圆放置在晶圆放置平台。Step 1. Place the wafer on the wafer placement platform.

步骤二、采用刀头对所述晶圆进行切边。Step 2, using a cutter head to trim the wafer.

所述在沿中心轴方向上所述刀头呈圆环形结构，所述圆环结构的外圈表面为切割表面；在朝所述切割表面的侧视方向上，所述刀头的侧面呈由第一矩形和第二矩形拼接而成的多边形结构；所述第一矩形的长度小于等于所述第二矩形的长度；所述第一矩形的宽度和所述第二矩形的宽度和等于所述刀头的厚度；切割时，所述第一矩形的长度边和所述晶圆的第一表面垂直，所述第一矩形的底部的宽度边和所述晶圆接触；所述第一矩形的长度为实际切割所述晶圆的所述刀头的直径，随着切割时间增加所述刀头会产生磨耗并会使所述第一矩形的长度减小；所述第二矩形的长度为所述刀头的初始直径。In the direction along the central axis, the cutter head has an annular structure, and the outer surface of the annular structure is the cutting surface; in the side view direction toward the cutting surface, the side surface of the cutter head is A polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; the sum of the width of the first rectangle and the width of the second rectangle is equal to the the thickness of the cutter head; when cutting, the length side of the first rectangle is perpendicular to the first surface of the wafer, and the width side of the bottom of the first rectangle is in contact with the wafer; the first rectangle The length is the diameter of the cutter head that actually cuts the wafer. As the cutting time increases, the cutter head will wear and reduce the length of the first rectangle; the length of the second rectangle is The initial diameter of the cutter head.

步骤三、在各所述晶圆切边过程中或者在各所述晶圆切边完成后，采用实时测量装置实时测量所述刀头的第一矩形的长度。Step 3: During each wafer trimming process or after each wafer trimming is completed, a real-time measuring device is used to measure the length of the first rectangle of the cutter head in real time.

步骤四、根据所述实时测量装置测量的所述第一矩形的长度以及所述刀头的中心轴和所述晶圆的表面之间的距离，采用切割深度校正装置自动校正切割深度。Step 4: According to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the cutter head and the surface of the wafer, a cutting depth correction device is used to automatically correct the cutting depth.

进一步的改进是，所述实时测量装置包括光源和成像装置。A further improvement is that the real-time measurement device includes a light source and an imaging device.

在沿中心轴方向上，所述光源和所述成像装置分别设置在所述刀头的两侧，所述光源发射的平行光从第一侧垂直照射所述刀头对应的侧面，所述平行光的范围大于所述刀头的初始直径；所述成像装置从第二侧接收所述光源的光并形成所述刀头的侧面像，根据所述刀头的侧面像得到所述第一矩形的长度。In the direction along the central axis, the light source and the imaging device are respectively arranged on two sides of the cutter head, and the parallel light emitted by the light source vertically illuminates the corresponding side surface of the cutter head from the first side, and the parallel light The range of light is greater than the initial diameter of the cutter head; the imaging device receives the light of the light source from the second side and forms a profile image of the cutter head, and the first rectangle is obtained according to the profile image of the cutter head length.

进一步的改进是，所述实时测量装置和电脑相连，所述刀头的侧面像实时发送到所述电脑上，通过所述电脑测量所述刀头的侧面像上的第一矩形的长度。A further improvement is that the real-time measuring device is connected to a computer, the profile image of the cutter head is sent to the computer in real time, and the length of the first rectangle on the profile image of the cutter head is measured by the computer.

进一步的改进是，所述切割深度校正装置由所述电脑实现。A further improvement is that the cutting depth correction device is realized by the computer.

进一步的改进是，所述刀头的中心轴和所述晶圆的表面之间的距离通过调节所述中心轴的高度调节；或者，所述刀头的中心轴和所述晶圆的表面之间的距离通过调节所述晶圆放置平台的高度调节；或者，所述刀头的中心轴和所述晶圆的表面之间的距离通过调节所述中心轴的高度调节和所述晶圆放置平台的高度调节。A further improvement is that the distance between the central axis of the cutter head and the surface of the wafer is adjusted by adjusting the height of the central axis; or, the distance between the central axis of the cutter head and the surface of the wafer is adjusted. The distance between the two is adjusted by adjusting the height of the wafer placement platform; or, the distance between the center axis of the tool head and the surface of the wafer is adjusted by adjusting the height of the center axis and the wafer placement Height adjustment of the platform.

本发明通过在晶圆切割装置中设置实时测量装置来测量实际切割晶圆的刀头的直径即和晶圆接触的切割表面的直径，在发生磨耗而使切割表面的直径减少时，能通过切割深度校正装置自动校正切割深度，本发明很容易实现在各晶圆的切边过程中或者在各晶圆切边完成后进行切割深度的自动校正，所以，本发明能对刀头的磨耗进行实时测量以及对切割深度进行自动校正，从而能提高切边质量，提高不同晶圆之间的切边深度的均匀性。In the present invention, a real-time measuring device is provided in the wafer dicing device to measure the diameter of the cutter head that actually dices the wafer, that is, the diameter of the dicing surface in contact with the wafer. The depth correction device automatically corrects the cutting depth. The present invention can easily realize the automatic correction of the cutting depth during the trimming process of each wafer or after the trimming of each wafer is completed. Therefore, the present invention can perform real-time wear on the cutter head. The measurement and automatic correction of cut depth results in improved edge quality and improved edge depth uniformity across wafers.

附图说明Description of drawings

下面结合附图和具体实施方式对本发明作进一步详细的说明：The present invention will be described in further detail below in conjunction with the accompanying drawings and specific embodiments:

图1A是现有晶圆切边方法中的刀头的立体结构图；1A is a perspective structural view of a cutter head in a conventional wafer trimming method;

图1B是现有晶圆切边方法进行切边时刀头和晶圆的结构示意图；1B is a schematic structural diagram of a cutter head and a wafer when an existing wafer trimming method performs trimming;

图1C是现有晶圆切边方法切边完成后的晶圆边缘结构图；1C is a structural diagram of the wafer edge after the conventional wafer edge trimming method is completed;

图2A是现有晶圆切边方法的CCS切割时立体结构示意图；2A is a schematic diagram of a three-dimensional structure during CCS cutting of an existing wafer edge trimming method;

图2B为图2A的左示意图；Fig. 2B is the left schematic diagram of Fig. 2A;

图2C是图2A对晶圆切割完成后进行切割长度测量的示意图；Fig. 2C is the schematic diagram that Fig. 2A carries out cutting length measurement after wafer cutting is completed;

图2D是现有晶圆切边方法的CCS的切割深度校正测量的结构示意图；2D is a schematic structural diagram of the CCS cutting depth correction measurement of the existing wafer edge trimming method;

图3是本发明实施例晶圆切边装置的实时测量装置的结构示意图；3 is a schematic structural diagram of a real-time measurement device of a wafer edge trimming device according to an embodiment of the present invention;

图4A是本发明实施例晶圆切边方法中刀头初始状态时的朝切割表面的侧视方向的结构图；4A is a structural diagram of a side view of a cutting surface when a cutter head is in an initial state in a wafer edge trimming method according to an embodiment of the present invention;

图4B是本发明实施例晶圆切边方法中刀头产生磨耗后的朝切割表面的侧视方向的结构图。4B is a structural diagram of a side view of the cutting surface after the cutter head is worn in the wafer edge trimming method according to the embodiment of the present invention.

具体实施方式Detailed ways

如图3所示，是本发明实施例晶圆切边装置的实时测量装置的结构示意图；如图4A所示，是本发明实施例晶圆切边方法中刀头1初始状态时的朝切割表面1a的侧视方向的结构图；如图4B所示，是本发明实施例晶圆切边方法中刀头1产生磨耗后的朝切割表面1a的侧视方向的结构图。本发明实施例中，刀头1的立体结构图也请参考图1A所示，进行切边时刀头1和晶圆2的结构示意图也请参考图1B所示，切边完成后的晶圆2边缘结构图也请参考图1C所示。本发明实施例晶圆切边装置包括：As shown in FIG. 3, it is a schematic structural diagram of the real-time measurement device of the wafer edge trimming device according to the embodiment of the present invention; as shown in FIG. The side view of the surface 1a; as shown in FIG. 4B , it is a side view of the cutting surface 1a after the cutter head 1 is worn in the wafer edge trimming method according to the embodiment of the present invention. In the embodiment of the present invention, please refer to FIG. 1A for the three-dimensional structural diagram of the cutter head 1 , and also refer to FIG. 1B for the structural schematic diagram of the cutter head 1 and the wafer 2 during edge trimming. The wafer after trimming is completed. 2 The edge structure diagram is also shown in Figure 1C. The wafer edge trimming device according to the embodiment of the present invention includes:

晶圆放置平台，用于放置晶圆2。Wafer placement platform for placing wafer 2.

所述晶圆2的第一表面为即可以为背面，也可以为正面。所述晶圆2为硅晶圆。The first surface of the wafer 2 can be either the back surface or the front surface. The wafer 2 is a silicon wafer.

刀头1，在沿中心轴AA方向上所述刀头1呈圆环形结构，所述圆环结构的外圈表面为切割表面1a。The cutter head 1 has a circular structure along the direction of the central axis AA, and the outer surface of the circular structure is the cutting surface 1a.

在朝所述切割表面1a的侧视方向上，所述刀头1的侧面呈由第一矩形1b和第二矩形1c拼接而成的多边形结构；所述第一矩形1b的长度小于等于所述第二矩形1c的长度；所述第一矩形1b的宽度和所述第二矩形1c的宽度和等于所述刀头1的厚度；切割时，所述第一矩形1b的长度边和所述晶圆2的第一表面垂直，所述第一矩形1b的底部的宽度边和所述晶圆2接触；所述第一矩形1b的长度为实际切割所述晶圆2的所述刀头1的直径，随着切割时间增加所述刀头1会产生磨耗并会使所述第一矩形1b的长度减小；所述第二矩形1c的长度为所述刀头1的初始直径。In the side view direction toward the cutting surface 1a, the side surface of the cutter head 1 has a polygonal structure formed by splicing a first rectangle 1b and a second rectangle 1c; the length of the first rectangle 1b is less than or equal to the length of the The length of the second rectangle 1c; the width of the first rectangle 1b and the width of the second rectangle 1c are equal to the thickness of the cutter head 1; when cutting, the length of the first rectangle 1b and the crystal The first surface of the circle 2 is vertical, and the width side of the bottom of the first rectangle 1b is in contact with the wafer 2; the length of the first rectangle 1b is the length of the cutter head 1 that actually cuts the wafer 2. As the cutting time increases, the cutter head 1 will be worn and the length of the first rectangle 1b will decrease; the length of the second rectangle 1c is the initial diameter of the cutter head 1 .

实时测量装置，用于实时测量所述刀头1的第一矩形1b的长度。The real-time measuring device is used to measure the length of the first rectangle 1b of the cutter head 1 in real time.

切割深度校正装置，用于根据所述实时测量装置测量的所述第一矩形1b的长度以及所述刀头1的中心轴AA和所述晶圆2的表面之间的距离自动校正切割深度。The cutting depth correction device is used for automatically correcting the cutting depth according to the length of the first rectangle 1b measured by the real-time measuring device and the distance between the central axis AA of the cutter head 1 and the surface of the wafer 2 .

如图3所示，所述实时测量装置包括光源301和成像装置302。As shown in FIG. 3 , the real-time measurement device includes a light source 301 and an imaging device 302 .

在沿中心轴AA方向上，所述光源301和所述成像装置302分别设置在所述刀头1的两侧，所述光源301发射的平行光303从第一侧垂直照射所述刀头1对应的侧面，所述平行光303的范围大于所述刀头1的初始直径；所述成像装置302从第二侧接收所述光源301的光并形成所述刀头1的侧面像，根据所述刀头1的侧面像得到所述第一矩形1b的长度。In the direction along the central axis AA, the light source 301 and the imaging device 302 are respectively disposed on two sides of the cutter head 1, and the parallel light 303 emitted by the light source 301 vertically illuminates the cutter head 1 from the first side On the corresponding side, the range of the parallel light 303 is larger than the initial diameter of the tool head 1; the imaging device 302 receives the light from the light source 301 from the second side and forms a side image of the tool head 1, according to the The length of the first rectangle 1b is obtained from the side profile of the cutter head 1 .

本发明实施例中，所述实时测量装置和电脑304相连，所述刀头1的侧面像实时发送到所述电脑304上，通过所述电脑304测量所述刀头1的侧面像上的第一矩形1b的长度。In the embodiment of the present invention, the real-time measuring device is connected to the computer 304, the profile image of the cutter head 1 is sent to the computer 304 in real time, and the computer 304 measures the first profile on the profile image of the cutter head 1. The length of a rectangle 1b.

本发明实施例中，所述实时测量装置在每一片所述晶圆2的切边完成后测量所述刀头1的第一矩形1b的长度。在其他实施例中，也能在所述晶圆2的切边过程中测量所述刀头1的第一矩形1b的长度。In the embodiment of the present invention, the real-time measurement device measures the length of the first rectangle 1b of the cutter head 1 after the edge trimming of each wafer 2 is completed. In other embodiments, the length of the first rectangle 1 b of the tool head 1 can also be measured during the trimming process of the wafer 2 .

所述切割深度校正装置由所述电脑304实现。The cutting depth correction device is realized by the computer 304 .

所述刀头1的中心轴AA和所述晶圆2的表面之间的距离通过调节所述中心轴AA的高度调节；或者，所述刀头1的中心轴AA和所述晶圆2的表面之间的距离通过调节所述晶圆放置平台的高度调节；或者，所述刀头1的中心轴AA和所述晶圆2的表面之间的距离通过调节所述中心轴AA的高度调节和所述晶圆放置平台的高度调节。The distance between the central axis AA of the cutter head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the central axis AA; The distance between the surfaces is adjusted by adjusting the height of the wafer placement platform; or, the distance between the center axis AA of the tool head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the center axis AA and height adjustment of the wafer placement platform.

本发明实施例通过在晶圆2切割装置中设置实时测量装置来测量实际切割晶圆2的刀头1的直径即和晶圆2接触的切割表面1a的直径，在发生磨耗而使切割表面1a的直径减少时，能通过切割深度校正装置自动校正切割深度，本发明实施例很容易实现在各晶圆2的切边过程中或者在各晶圆2切边完成后进行切割深度的自动校正，所以，本发明实施例能对刀头1的磨耗进行实时测量以及对切割深度进行自动校正，从而能提高切边质量，提高不同晶圆2之间的切边深度的均匀性。In the embodiment of the present invention, a real-time measurement device is provided in the wafer 2 cutting device to measure the diameter of the cutter head 1 that actually cuts the wafer 2, that is, the diameter of the cutting surface 1a in contact with the wafer 2. When abrasion occurs, the cutting surface 1a is When the diameter of the wafer 2 is reduced, the cutting depth can be automatically corrected by the cutting depth correction device. The embodiment of the present invention can easily realize the automatic correction of the cutting depth during the trimming process of each wafer 2 or after the trimming of each wafer 2 is completed. Therefore, the embodiment of the present invention can measure the wear of the cutter head 1 in real time and automatically correct the cutting depth, thereby improving the quality of the trimming and the uniformity of the trimming depth between different wafers 2 .

本发明实施例晶圆切边方法包括如下步骤：The wafer edge trimming method according to the embodiment of the present invention includes the following steps:

步骤一、将晶圆2放置在晶圆放置平台。Step 1. Place the wafer 2 on the wafer placement platform.

所述晶圆2的第一表面为即可以为背面，也可以为正面。The first surface of the wafer 2 can be either the back surface or the front surface.

步骤二、采用刀头1对所述晶圆2进行切边。Step 2, using the cutter head 1 to trim the wafer 2 .

所述在沿中心轴AA方向上所述刀头1呈圆环形结构，所述圆环结构的外圈表面为切割表面1a；在朝所述切割表面1a的侧视方向上，所述刀头1的侧面呈由第一矩形1b和第二矩形1c拼接而成的多边形结构；所述第一矩形1b的长度小于等于所述第二矩形1c的长度；所述第一矩形1b的宽度和所述第二矩形1c的宽度和等于所述刀头1的厚度；切割时，所述第一矩形1b的长度边和所述晶圆2的第一表面垂直，所述第一矩形1b的底部的宽度边和所述晶圆2接触；所述第一矩形1b的长度为实际切割所述晶圆2的所述刀头1的直径，随着切割时间增加所述刀头1会产生磨耗并会使所述第一矩形1b的长度减小；所述第二矩形1c的长度为所述刀头1的初始直径。In the direction along the central axis AA, the cutter head 1 is in an annular structure, and the outer surface of the annular structure is the cutting surface 1a; in the side view direction toward the cutting surface 1a, the cutter The side surface of the head 1 is a polygonal structure formed by splicing a first rectangle 1b and a second rectangle 1c; the length of the first rectangle 1b is less than or equal to the length of the second rectangle 1c; the width of the first rectangle 1b and The width of the second rectangle 1c is equal to the thickness of the cutter head 1; when cutting, the length side of the first rectangle 1b is perpendicular to the first surface of the wafer 2, and the bottom of the first rectangle 1b The width side is in contact with the wafer 2; the length of the first rectangle 1b is the diameter of the cutter head 1 that actually cuts the wafer 2, and the cutter head 1 will wear and tear as the cutting time increases. The length of the first rectangle 1b will be reduced; the length of the second rectangle 1c is the initial diameter of the cutter head 1 .

步骤三、在各所述晶圆2切边过程中或者在各所述晶圆2切边完成后，采用实时测量装置实时测量所述刀头1的第一矩形1b的长度。Step 3: In the process of trimming each of the wafers 2 or after the trimming of each of the wafers 2, a real-time measuring device is used to measure the length of the first rectangle 1b of the cutter head 1 in real time.

本发明实施例方法中，所述实时测量装置包括光源301和成像装置302。In the method of the embodiment of the present invention, the real-time measurement device includes a light source 301 and an imaging device 302 .

在沿中心轴AA方向上，所述光源301和所述成像装置302分别设置在所述刀头1的两侧，所述光源301发射的平行光303从第一侧垂直照射所述刀头1对应的侧面，所述平行光303的范围大于所述刀头1的初始直径；所述成像装置302从第二侧接收所述光源301的光并形成所述刀头1的侧面像，根据所述刀头1的侧面像得到所述第一矩形1b的长度。In the direction along the central axis AA, the light source 301 and the imaging device 302 are respectively disposed on two sides of the cutter head 1, and the parallel light 303 emitted by the light source 301 vertically illuminates the cutter head 1 from the first side On the corresponding side, the range of the parallel light 303 is larger than the initial diameter of the tool head 1; the imaging device 302 receives the light from the light source 301 from the second side and forms a side image of the tool head 1, according to the The length of the first rectangle 1b is obtained from the side profile of the cutter head 1 .

所述实时测量装置和电脑304相连，所述刀头1的侧面像实时发送到所述电脑304上，通过所述电脑304测量所述刀头1的侧面像上的第一矩形1b的长度。The real-time measuring device is connected to the computer 304 , the profile image of the cutter head 1 is sent to the computer 304 in real time, and the computer 304 measures the length of the first rectangle 1b on the profile image of the cutter head 1 .

步骤四、根据所述实时测量装置测量的所述第一矩形1b的长度以及所述刀头1的中心轴AA和所述晶圆2的表面之间的距离，采用切割深度校正装置自动校正切割深度。Step 4. According to the length of the first rectangle 1b measured by the real-time measuring device and the distance between the central axis AA of the cutter head 1 and the surface of the wafer 2, the cutting depth correction device is used to automatically correct the cutting depth.

所述切割深度校正装置由所述电脑304实现。The cutting depth correction device is realized by the computer 304 .

所述刀头1的中心轴AA和所述晶圆2的表面之间的距离通过调节所述中心轴AA的高度调节；或者，所述刀头1的中心轴AA和所述晶圆2的表面之间的距离通过调节所述晶圆放置平台的高度调节；或者，所述刀头1的中心轴AA和所述晶圆2的表面之间的距离通过调节所述中心轴AA的高度调节和所述晶圆放置平台的高度调节。The distance between the central axis AA of the cutter head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the central axis AA; The distance between the surfaces is adjusted by adjusting the height of the wafer placement platform; or, the distance between the center axis AA of the tool head 1 and the surface of the wafer 2 is adjusted by adjusting the height of the center axis AA and height adjustment of the wafer placement platform.

以上通过具体实施例对本发明进行了详细的说明，但这些并非构成对本发明的限制。在不脱离本发明原理的情况下，本领域的技术人员还可做出许多变形和改进，这些也应视为本发明的保护范围。The present invention has been described in detail above through specific embodiments, but these are not intended to limit the present invention. Without departing from the principles of the present invention, those skilled in the art can also make many modifications and improvements, which should also be regarded as the protection scope of the present invention.

Claims (11)

1. A wafer edge trimming apparatus, comprising:
the wafer placing platform is used for placing a wafer;
the cutter head is of a circular structure along the direction of the central shaft, and the surface of the outer ring of the circular structure is a cutting surface;
in the side view direction facing the cutting surface, the side surface of the cutter head is of a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; the sum of the width of the first rectangle and the width of the second rectangle is equal to the thickness of the cutter head; during cutting, the length side of the first rectangle is vertical to the first surface of the wafer, and the width side of the bottom of the first rectangle is in contact with the wafer; the length of the first rectangle is the diameter of the tool bit for actually cutting the wafer, and the tool bit can generate abrasion and reduce the length of the first rectangle along with the increase of cutting time; the length of the second rectangle is the initial diameter of the cutter head;
the real-time measuring device is used for measuring the length of the first rectangle of the cutter head in real time;
and the cutting depth correction device is used for automatically correcting the cutting depth according to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the tool bit and the surface of the wafer.
2. The wafer trimming apparatus according to claim 1, wherein: the real-time measuring device comprises a light source and an imaging device;
the light source and the imaging device are respectively arranged on two sides of the tool bit along the central axis direction, parallel light emitted by the light source vertically irradiates the corresponding side surface of the tool bit from a first side, and the range of the parallel light is larger than the initial diameter of the tool bit; the imaging device receives light from the light source from a second side and forms a side image of the tool bit, and the length of the first rectangle is obtained from the side image of the tool bit.
3. The wafer trimming apparatus according to claim 2, wherein: the real-time measuring device is connected with a computer, the side image of the cutter head is sent to the computer in real time, and the length of a first rectangle on the side image of the cutter head is measured through the computer.
4. The wafer trimming apparatus according to claim 3, wherein: the real-time measuring device measures the length of the first rectangle of the tool bit after the trimming of each wafer is completed.
5. The wafer trimming apparatus according to claim 3, wherein: the cutting depth correction device is realized by the computer.
6. The wafer trimming apparatus according to claim 5, wherein: the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft; or the distance between the central axis of the tool bit and the surface of the wafer is adjusted by adjusting the height of the wafer placing platform; or the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft and the height of the wafer placing platform.
7. A wafer trimming method is characterized by comprising the following steps:
firstly, placing a wafer on a wafer placing platform;
step two, trimming the wafer by adopting a tool bit;
the cutter head is of a circular ring structure in the direction along the central shaft, and the surface of the outer ring of the circular ring structure is a cutting surface; in the side view direction facing the cutting surface, the side surface of the cutter head is of a polygonal structure formed by splicing a first rectangle and a second rectangle; the length of the first rectangle is less than or equal to the length of the second rectangle; the sum of the width of the first rectangle and the width of the second rectangle is equal to the thickness of the cutter head; during cutting, the length side of the first rectangle is vertical to the first surface of the wafer, and the width side of the bottom of the first rectangle is in contact with the wafer; the length of the first rectangle is the diameter of the tool bit for actually cutting the wafer, and the tool bit can generate abrasion and reduce the length of the first rectangle along with the increase of cutting time; the length of the second rectangle is the initial diameter of the cutter head;
step three, in the process of trimming each wafer or after trimming each wafer is finished, measuring the length of the first rectangle of the tool bit in real time by using a real-time measuring device;
and fourthly, automatically correcting the cutting depth by adopting a cutting depth correction device according to the length of the first rectangle measured by the real-time measuring device and the distance between the central axis of the tool bit and the surface of the wafer.
8. The wafer trimming method of claim 7, wherein: the real-time measuring device comprises a light source and an imaging device;
the light source and the imaging device are respectively arranged on two sides of the tool bit along the central axis direction, parallel light emitted by the light source vertically irradiates the corresponding side surface of the tool bit from a first side, and the range of the parallel light is larger than the initial diameter of the tool bit; the imaging device receives light from the light source from a second side and forms a side image of the tool bit, and the length of the first rectangle is obtained from the side image of the tool bit.
9. The wafer trimming method of claim 8, wherein: the real-time measuring device is connected with a computer, the side image of the cutter head is sent to the computer in real time, and the length of a first rectangle on the side image of the cutter head is measured through the computer.
10. The wafer trimming method of claim 9, wherein: the cutting depth correction device is realized by the computer.
11. The wafer trimming method of claim 10, wherein: the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft; or the distance between the central axis of the tool bit and the surface of the wafer is adjusted by adjusting the height of the wafer placing platform; or the distance between the central shaft of the tool bit and the surface of the wafer is adjusted by adjusting the height of the central shaft and the height of the wafer placing platform.
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