CN111341631A - An Electromagnetic Wave Generator Using Secondary Electron Multiplication - Google Patents
An Electromagnetic Wave Generator Using Secondary Electron Multiplication Download PDFInfo
- Publication number
- CN111341631A CN111341631A CN202010264054.4A CN202010264054A CN111341631A CN 111341631 A CN111341631 A CN 111341631A CN 202010264054 A CN202010264054 A CN 202010264054A CN 111341631 A CN111341631 A CN 111341631A
- Authority
- CN
- China
- Prior art keywords
- secondary electron
- micro
- electrons
- multiplication
- resonant cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000010894 electron beam technology Methods 0.000 claims abstract description 24
- 238000013461 design Methods 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910002601 GaN Inorganic materials 0.000 claims description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000000956 alloy Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910003460 diamond Inorganic materials 0.000 claims description 2
- 239000010432 diamond Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 2
- 239000010937 tungsten Substances 0.000 claims description 2
- 229910052721 tungsten Inorganic materials 0.000 claims description 2
- 239000006185 dispersion Substances 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 8
- 238000004891 communication Methods 0.000 description 4
- 230000003321 amplification Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000002059 diagnostic imaging Methods 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/02—Electrodes; Magnetic control means; Screens
- H01J23/04—Cathodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/18—Resonators
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
- H01J23/26—Helical slow-wave structures; Adjustment therefor
- H01J23/27—Helix-derived slow-wave structures
Landscapes
- Microwave Tubes (AREA)
- Particle Accelerators (AREA)
Abstract
Description
技术领域technical field
本发明属于微波器件技术领域,涉及速调管、行波管、返波管等真空电子器件,更为具体地讲,涉及一种利用二次电子倍增的电磁波发生器。The invention belongs to the technical field of microwave devices, and relates to vacuum electronic devices such as klystrons, traveling wave tubes, and return wave tubes, and more specifically, to an electromagnetic wave generator utilizing secondary electron multiplication.
背景技术Background technique
真空电子器件包括速调管、行波管、返波管等,采用热阴极发射电子束,电子束在谐振腔或慢波结构中进行速度调制,速度调制的电子束在传输过程中,速度快的电子追上速度慢的电子,形成群聚电子束团,群聚电子束团将能量交给电磁波,从而形成放大或振荡的电磁波输出。电子束在真空电子器件中传输时,需要磁场聚焦,一般采用螺线管或周期永磁磁场聚焦。Vacuum electronic devices include klystrons, traveling wave tubes, return wave tubes, etc., using hot cathodes to emit electron beams, and the electron beams are velocity modulated in a resonant cavity or slow-wave structure. The electrons catch up with the slower electrons to form a clustered electron cluster, and the clustered electron cluster transfers energy to the electromagnetic wave, thereby forming an amplified or oscillating electromagnetic wave output. When the electron beam is transmitted in a vacuum electronic device, a magnetic field is required for focusing, and a solenoid or a periodic permanent magnet magnetic field is generally used for focusing.
真空电子器件具有输出功率高,工作频率高、抗辐射、长寿命的优点,因此在无线通信、卫星通信、广播电视、航空航天、气象雷达、全球定位系统(GPS)、深空探索、医用加速器、导弹制导、保密链路、战场监视、及电子对抗等方面有着极其广泛应用,特别是在各类战斗机、轰炸机、无人机、舰船、坦克和卫星系统中更是不可或缺的,它是现代高端电子信息装备的心脏,具有不可替代的作用。Vacuum electronic devices have the advantages of high output power, high operating frequency, radiation resistance and long life, so they are widely used in wireless communications, satellite communications, radio and television, aerospace, weather radar, global positioning system (GPS), deep space exploration, medical accelerators , missile guidance, security links, battlefield surveillance, and electronic countermeasures are extremely widely used, especially in various fighters, bombers, UAVs, ships, tanks and satellite systems. It is the heart of modern high-end electronic information equipment and has an irreplaceable role.
随着社会的发展,科技的进步,真空电子器件在各领域内应用广度和深度也在不断的增加,同时各个领域对真空放大器的体积,增益,功率,频率和带宽等方面也提出越来越高的要求:雷达,电子对抗系统需要更高功率、更宽带宽、及更高增益的放大器;医疗成像及大数据传输需要更高频率、更宽带宽、更小体积的放大器;在太赫兹科技方面,迫切需求能够填补“太赫兹空隙”的高频率、大功率放大器;而卫星通信、深空探索方面,则需要更小体积、更高功率、更高增益的真空放大器;尤其是埃隆马斯克提出星链构想后,数万颗小卫星将今后数年飞向太空,而且每年有近万颗的替代,迫切需要近十万只放大器构成的通讯系统,这不仅要求新型星载真空放大器体积小、质量轻、增益高,而且还要求结构简单,能够批量生产。总之,发展小体积、轻质量、高增益、大功率、宽频带、结构简单、能批量生产的新型真空电子器件具有重要的科学意义和迫切的现实需求。With the development of society and the advancement of science and technology, the application breadth and depth of vacuum electronic devices in various fields are also increasing. High requirements: Radar, electronic countermeasures systems require amplifiers with higher power, wider bandwidth, and higher gain; medical imaging and big data transmission require amplifiers with higher frequency, wider bandwidth, and smaller volume; in terahertz technology On the other hand, there is an urgent need for high-frequency, high-power amplifiers that can fill the "terahertz gap"; in satellite communications and deep space exploration, vacuum amplifiers with smaller size, higher power, and higher gain are needed; especially Elon Ma After SK proposed the Starlink concept, tens of thousands of small satellites will fly into space in the next few years, and there will be nearly 10,000 replacements every year. There is an urgent need for a communication system composed of nearly 100,000 amplifiers, which not only requires the volume of new spaceborne vacuum amplifiers Small size, light weight, high gain, simple structure and mass production. In a word, the development of new vacuum electronic devices with small volume, light weight, high gain, high power, wide frequency band, simple structure, and mass production has important scientific significance and urgent practical needs.
现有的行波管、速调管、磁控管、回旋管等真空电子器件,即大功率电磁波发生器采用热阴极,需要额外加热阴极、发射的电子密度小,需要磁场聚焦,同时产生的电磁波的功率较低。Existing vacuum electronic devices such as traveling wave tubes, klystrons, magnetrons, and gyrotrons, that is, high-power electromagnetic wave generators use hot cathodes, which require additional heating of the cathodes, emit low electron density, and require magnetic field focusing. Electromagnetic waves have low power.
发明内容SUMMARY OF THE INVENTION
本发明的目的在于克服现有技术的不足,提出一种利用二次电子倍增的电磁波发生器,不需要磁场聚焦的同时,提高输出电磁波信号的功率和增益。The purpose of the present invention is to overcome the deficiencies of the prior art, and to propose an electromagnetic wave generator utilizing secondary electron multiplication, which does not require magnetic field focusing and at the same time increases the power and gain of the output electromagnetic wave signal.
为实现上述发明目的,本发明利用二次电子倍增的电磁波发生器,包括:In order to realize the above-mentioned purpose of the invention, the present invention utilizes the electromagnetic wave generator of secondary electron multiplication, including:
阴极,用于发射电子,形成电子束;The cathode, which emits electrons to form an electron beam;
其特征在于,还包括:It is characterized in that it also includes:
一片或两片的二次电子倍增片,沿厚度方向(电子传输方向)有多个微米直径微通道,微通道内壁涂敷有二次电子倍增膜(微通道内壁膜),微通道的高度或者直径远小于二次电子倍增片厚度,即微通道长度,电子会在微通道内壁发生多次碰撞,每次碰撞会产生数十个二次电子(二次电子发射系数,一般远高于3);One or two pieces of secondary electron multiplying sheet, there are multiple micro-channels with micrometer diameter along the thickness direction (electron transport direction), the inner wall of the micro-channel is coated with a secondary electron multiplying film (micro-channel inner wall film), the height of the micro-channel or The diameter is much smaller than the thickness of the secondary electron multiplier sheet, that is, the length of the microchannel. The electrons will collide on the inner wall of the microchannel for many times, and each collision will generate dozens of secondary electrons (the secondary electron emission coefficient is generally much higher than 3) ;
两段或三段慢波结构(主要针对行波管、返波管)或谐振腔(主要针对速调管、回旋管),二次电子倍增片垂直插入到前后连接的两段慢波结构或谐振腔之间,电子由阴极发射出来后,先受到第一段慢波结构或谐振腔的调制,产生初步的速度和密度调制,其后进入二次电子倍增片,电子在微通道中发生多次碰撞,产生数万倍的电子倍增,即实现了数万倍电子数量增长,也就是数万倍电流增长,由于电子进入到二次电子倍增片时,已经有密度调制,电流增长后依然有密度调制;二次电子倍增片后接第二段慢波结构或谐振腔,此时具有密度调制的电子束电流能够激发电磁波产生输出;如果增益或输出功率不满足需求,或可以利用第二段慢波结构或谐振腔再次对电子束电流进行调制,后再接二次电子倍增片和第三段慢波结构或谐振腔作为输出。Two-segment or three-segment slow-wave structure (mainly for traveling wave tube, return wave tube) or resonant cavity (mainly for klystron, gyrotron), the secondary electron multiplier is vertically inserted into the two-segment slow-wave structure or Between the resonators, after the electrons are emitted from the cathode, they are first modulated by the first segment of the slow-wave structure or the resonator, resulting in initial velocity and density modulation, and then enter the secondary electron multiplier, where electrons multiply in the microchannels. The secondary collision produces tens of thousands of times of electron multiplication, that is, the increase of the number of electrons by tens of thousands of times, that is, the increase of tens of thousands of times of current, because when the electrons enter the secondary electron multiplier sheet, there is already density modulation, and there is still an increase in the current after the increase. Density modulation; the secondary electron multiplier is followed by a second slow wave structure or resonant cavity. At this time, the electron beam current with density modulation can excite electromagnetic waves to generate output; if the gain or output power does not meet the requirements, the second section can be used. The slow-wave structure or resonant cavity modulates the electron beam current again, and then the secondary electron multiplier and the third segment of the slow-wave structure or resonant cavity are connected as the output.
本发明的目的是这样实现的。The object of the present invention is achieved in this way.
本发明利用二次电子倍增的电磁波发生器将慢波结构或谐振腔分成两段或三段,在前后两段之间垂直插入二次电子倍增片。二次电子倍增片沿厚度方向(电子传输方向)有多个微米直径微通道,微通道内壁涂敷有二次电子倍增膜(微通道内壁膜),微通道的高度或者直径远小于二次电子倍增片厚度,即微通道长度,电子会在微通道内壁发生多次碰撞,每次碰撞会产生数十个二次电子(二次电子发射系数,一般远高于3),这样可以将产生数万倍的电子倍增,即实现了数万倍电子数量增长,也就是数万倍的电流增长,由于电子进入到二次电子倍增片时,已经有密度调制,电流增长后依然有密度调制。二次电子倍增片后接第二段慢波结构或谐振腔,此时具有密度调制的电子束电流能够激发电磁波产生输出;如果增益或输出功率不满足需求,或可以利用第二段慢波结构或谐振腔再次对电子束电流进行调制,后再接二次电子倍增片和第三段慢波结构或谐振腔作为输出。本发明中慢波结构或谐振腔和二次电子倍增片交错。二次电子倍增实现电子束电流倍增,即能量倍增,但是并不影响电子束已经产生的密度调制,故而能够获得更高功率,更高增益的电磁波输出。与此同时,由于插入了二次电子倍增片,所以真空电子器件不需要外加聚焦磁场,因为即使是电子束是分散的,这也不影响电子束密度变化,虽然分散后只有少量的电子能够打到二次电子倍增片上,但是由于二次电子倍增片的增益高达数万倍,所以已经足够能将电子束电流放大。The invention utilizes a secondary electron multiplying electromagnetic wave generator to divide the slow wave structure or resonant cavity into two or three segments, and vertically inserts a secondary electron multiplying sheet between the front and rear segments. The secondary electron multiplier sheet has multiple micro-channels with micrometer diameter along the thickness direction (electron transport direction), and the inner wall of the micro-channel is coated with a secondary electron multiplier film (the inner wall film of the micro-channel), and the height or diameter of the micro-channel is much smaller than that of the secondary electron. The thickness of the multiplier sheet is the length of the microchannel. The electrons will collide on the inner wall of the microchannel for many times, and each collision will generate dozens of secondary electrons (the emission coefficient of secondary electrons is generally much higher than 3), which can generate several electrons. The tens of thousands of times of electron multiplication means that the number of electrons increases by tens of thousands of times, that is, the increase of current is tens of thousands of times. Since the electrons enter the secondary electron multiplier, there is already density modulation, and there is still density modulation after the current increases. The secondary electron multiplier is followed by a second slow-wave structure or resonant cavity. At this time, the electron beam current with density modulation can excite electromagnetic waves to generate output; if the gain or output power does not meet the requirements, the second slow-wave structure can be used. Or the resonant cavity modulates the electron beam current again, and then connects the secondary electron multiplier and the third slow-wave structure or the resonant cavity as the output. In the present invention, the slow-wave structure or resonant cavity and the secondary electron multiplier sheet are interleaved. The secondary electron multiplication realizes the multiplication of the electron beam current, that is, the energy multiplication, but does not affect the density modulation produced by the electron beam, so it can obtain the electromagnetic wave output with higher power and higher gain. At the same time, due to the insertion of the secondary electron multiplier, the vacuum electronic device does not need an external focusing magnetic field, because even if the electron beam is dispersed, this does not affect the change of the electron beam density, although only a small amount of electrons can be hit after the dispersion. to the secondary electron multiplier, but since the gain of the secondary electron multiplier is as high as tens of thousands of times, it is enough to amplify the electron beam current.
此外,由于不需要外加聚焦磁场以及输出电磁波功率、增益提高,电磁波发生器体积、质量都可以大幅度减小。其体积与现有电磁波发生器相比,缩小了至原有的一半、增益也将扩大至原来的2倍,并且结构也更简单,可以满足小卫星,相控阵系统等对小体积、轻质量、高增益、可批量生产的新型真空电子器件的迫切需求。In addition, since there is no need for an external focusing magnetic field and the power and gain of the output electromagnetic wave are improved, the volume and quality of the electromagnetic wave generator can be greatly reduced. Compared with the existing electromagnetic wave generator, its volume is reduced to half of the original, the gain will be expanded to twice the original, and the structure is simpler, which can meet the needs of small satellites, phased array systems, etc. There is an urgent need for high-quality, high-gain, mass-producible new vacuum electronic devices.
附图说明Description of drawings
图1是本发明利用二次电子倍增的电磁波发生器一种具体实施方式(折叠波导慢波结构)的结构示意图;1 is a schematic structural diagram of a specific embodiment (folded waveguide slow-wave structure) of an electromagnetic wave generator utilizing secondary electron multiplication according to the present invention;
图2是本发明利用二次电子倍增的电磁波发生器另一种具体实施方式(谐振腔)的结构示意图;2 is a schematic structural diagram of another specific embodiment (resonant cavity) of an electromagnetic wave generator utilizing secondary electron multiplication according to the present invention;
图3是本发明利用二次电子倍增的电磁波发生器另一种具体实施方式(矩形栅慢波结构)的结构示意图;3 is a schematic structural diagram of another specific embodiment (rectangular grating slow-wave structure) of an electromagnetic wave generator utilizing secondary electron multiplication according to the present invention;
图4是本发明利用二次电子倍增的电磁波发生器另一种具体实施方式(螺旋线慢波结构)的结构示意图。4 is a schematic structural diagram of another specific embodiment (spiral slow wave structure) of an electromagnetic wave generator utilizing secondary electron multiplication according to the present invention.
具体实施方式Detailed ways
下面结合附图对本发明的具体实施方式进行描述,以便本领域的技术人员更好地理解本发明。需要特别提醒注意的是,在以下的描述中,当已知功能和设计的详细描述也许会淡化本发明的主要内容时,这些描述在这里将被忽略。The specific embodiments of the present invention are described below with reference to the accompanying drawings, so that those skilled in the art can better understand the present invention. It should be noted that, in the following description, when the detailed description of known functions and designs may dilute the main content of the present invention, these descriptions will be omitted here.
图1是本发明利用二次电子倍增的电磁波发生器一种具体实施方式(折叠波导慢波结构)的结构示意图。FIG. 1 is a schematic structural diagram of a specific embodiment (folded waveguide slow wave structure) of an electromagnetic wave generator utilizing secondary electron multiplication according to the present invention.
在本实施例中,如图1所示,本发明利用二次电子倍增的电磁波发生器,包括:阴极1、两段慢波结构2以及一片二次电子倍增片3。在本实施例中,慢波结构为折叠波导慢波结构,阴极1为热阴极。In this embodiment, as shown in FIG. 1 , the present invention utilizes a secondary electron multiplying electromagnetic wave generator, including: a cathode 1 , a two-stage slow-
二次电子倍增片3沿厚度方向(电子传输方向)有多个微米直径微通道,微通道内壁涂敷有二次电子倍增膜(微通道内壁膜),微通道的高度或者直径远小于二次电子倍增片厚度,即微通道长度,电子会在微通道内壁发生多次碰撞,每次碰撞会产生数个二次电子(二次电子发射系数,一般δ>3);二次电子倍增片3垂直插入到前后连接的两段折叠波导慢波结构2。The secondary
阴极1发射电子,形成电子束。电子由阴极1发射出来后,先受到第一段折叠波导慢波结构2的调制,产生初步的速度和密度调制,其后进入二次电子倍增片3,电子在微通道中发生多次碰撞,产生数万倍的电子倍增,形成具有密度调制的放大数万倍的电子束电流4,二次电子倍增片3后接第二段折叠波导慢波结构2,此时具体密度调制的放大数万倍的电子束电流4能够激发产生放大数万倍的电磁波输出。The cathode 1 emits electrons to form an electron beam. After the electrons are emitted from the cathode 1, they are first modulated by the first segment of the folded waveguide slow-
在本实施例中,二次电子倍增片3半径为1mm,厚度1mm,阴极1发射初始电子束,第一段折叠波导慢波结构2调制后,通过二次电子倍增片3,再用第二段折叠波导慢波结构2产生2-8GHz电磁波。In this embodiment, the radius of the secondary
图2是本发明利用二次电子倍增的电磁波发生器另一种具体实施方式(谐振腔)的结构示意图。FIG. 2 is a schematic structural diagram of another specific embodiment (resonant cavity) of an electromagnetic wave generator utilizing secondary electron multiplication according to the present invention.
在本实施例中,如图2所示,利用二次电子倍增的电磁波发生器与图1所示结构类似,只是采用三段谐振腔501、502、503,两片二次电子倍增片301、302。二次电子倍增片301、302垂直插入到前后连接的两段谐振腔501、502、503之间,即二次电子倍增片301垂直插入到前后连接的两段谐振腔501、502之间,二次电子倍增片302垂直插入到前后连接的两段谐振腔502、503之间。In this embodiment, as shown in FIG. 2 , the electromagnetic wave generator using secondary electron multiplication is similar in structure to that shown in FIG. 1 , except that three-segment
二次电子倍增片301、302为椭圆形片,长轴为5.5mm,短轴为1.2mm,厚度为2mm,阴极1产生初始电子束团,经过第一段谐振腔501调制,通过第一片二次电子倍增片301倍增,再通过第二段谐振腔502调制,并再次通过第二片二次电子倍增片302倍增,最后在第三段谐振腔503中产生32-40GHz的电磁波输出。The secondary
图3是本发明利用二次电子倍增的电磁波发生器另一种具体实施方式(矩形栅慢波结构)的结构示意图。FIG. 3 is a schematic structural diagram of another specific embodiment of the electromagnetic wave generator utilizing secondary electron multiplication (rectangular grating slow-wave structure) according to the present invention.
在本实施例中,如图3所示,利用二次电子倍增的电磁波发生器与图2所示结构类似,只是采用三段矩形栅慢波结构601、602、603,两片二次电子倍增片301、302为矩形片,长宽为5*2mm,厚度为0.5mm,阴极1产生初始电子束团,经过第一段矩形栅慢波结构601调制,通过第一片二次电子倍增片301倍增,再通过第二段矩形栅慢波结构602调制,并再次通过第二片二次电子倍增片302倍增,最后在第三段矩形栅慢波结构603中产生10-20GHz的电磁波输出。In this embodiment, as shown in FIG. 3 , the electromagnetic wave generator using the secondary electron multiplication is similar to the structure shown in FIG. 2 , except that three-segment rectangular grating slow-
图4是本发明利用二次电子倍增的电磁波发生器另一种具体实施方式(螺旋线慢波结构)的结构示意图。4 is a schematic structural diagram of another specific embodiment (spiral slow wave structure) of an electromagnetic wave generator utilizing secondary electron multiplication according to the present invention.
在本实施例中,如图4所示,利用二次电子倍增的电磁波发生器与图2所示结构类似,只是采用四段螺旋线慢波结构701、702、703、704,三片二次电子倍增片301、302、303,为圆形片,半径为1mm,厚度为0.6mm,阴极1产生初始电子束团,经过第一段螺旋线慢波结构701调制,通过第一片二次电子倍增片301倍增,再通过第二段螺旋线慢波结构702调制,并再次通过第二片二次电子倍增片302倍增,再通过第三段螺旋线慢波结构703调制,并再次通过第三片二次电子倍增片303倍增,最后在第四段螺旋线慢波结构704中产生65-75GHz的电磁波输出。也就是说,本发明在两段、三段的基础上还可以进一步扩展。In this embodiment, as shown in FIG. 4 , the electromagnetic wave generator using secondary electron multiplication is similar to the structure shown in FIG. 2 , except that four-segment helical slow-
以上为四个实例,实际应用过程中,根据设计不同,二次电子倍增片及慢波结构材质可以采用无氧铜、不锈钢、钨、钼等金属材料、合金材料或氮化镓、砷化镓、金刚石等半导体材料。慢波结构或谐振腔根据设计和应用的不同,可以是螺旋线、折叠波导、矩形双栅,矩形单栅、单谐振腔、多谐振腔、矩形腔、椭圆腔等,并不影响本发明的适用性。二次电子倍增片可以为圆柱形,矩形,高椭圆形、环形等。The above are four examples. In the actual application process, depending on the design, the materials of the secondary electron multiplier and the slow-wave structure can be made of oxygen-free copper, stainless steel, tungsten, molybdenum and other metal materials, alloy materials or gallium nitride, gallium arsenide , diamond and other semiconductor materials. Depending on the design and application, the slow-wave structure or resonant cavity can be a helix, a folded waveguide, a rectangular double grid, a rectangular single grid, a single resonant cavity, multiple resonant cavities, a rectangular cavity, an elliptical cavity, etc. applicability. The secondary electron multiplier sheet can be cylindrical, rectangular, tall oval, annular, and the like.
尽管上面对本发明说明性的具体实施方式进行了描述,以便于本技术领域的技术人员理解本发明,但应该清楚,本发明不限于具体实施方式的范围,对本技术领域的普通技术人员来讲,只要各种变化在所附的权利要求限定和确定的本发明的精神和范围内,这些变化是显而易见的,一切利用本发明构思的发明创造均在保护之列。Although the illustrative specific embodiments of the present invention have been described above to facilitate the understanding of the present invention by those skilled in the art, it should be clear that the present invention is not limited to the scope of the specific embodiments. For those skilled in the art, As long as various changes are within the spirit and scope of the present invention as defined and determined by the appended claims, these changes are obvious, and all inventions and creations utilizing the inventive concept are included in the protection list.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010264054.4A CN111341631B (en) | 2020-04-07 | 2020-04-07 | An Electromagnetic Wave Generator Using Secondary Electron Multiplication |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202010264054.4A CN111341631B (en) | 2020-04-07 | 2020-04-07 | An Electromagnetic Wave Generator Using Secondary Electron Multiplication |
Publications (2)
Publication Number | Publication Date |
---|---|
CN111341631A true CN111341631A (en) | 2020-06-26 |
CN111341631B CN111341631B (en) | 2021-05-14 |
Family
ID=71184765
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202010264054.4A Active CN111341631B (en) | 2020-04-07 | 2020-04-07 | An Electromagnetic Wave Generator Using Secondary Electron Multiplication |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN111341631B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113838727A (en) * | 2021-09-16 | 2021-12-24 | 电子科技大学 | A miniaturized high-power klystron based on a single-ridge CeSRR unit |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3373309A (en) * | 1962-10-03 | 1968-03-12 | Siemens Ag | Electron beam tube for frequency multiplication |
EP0809271A2 (en) * | 1996-05-22 | 1997-11-26 | Frederick Michael Mako | Electron gun |
JPH10303000A (en) * | 1997-04-22 | 1998-11-13 | Mitsubishi Heavy Ind Ltd | Superconductive accelerating cavity and its manufacture |
CN1292928A (en) * | 1998-01-08 | 2001-04-25 | 利通系统有限公司 | M-type microwave device |
CN1294750A (en) * | 1998-01-08 | 2001-05-09 | 利通系统有限公司 | Magnetron |
CN101770921A (en) * | 2008-12-30 | 2010-07-07 | 中国科学院电子学研究所 | Frequency-multiplier klystron and manufacture method thereof |
US20130063052A1 (en) * | 2010-03-05 | 2013-03-14 | Accuray, Inc. | Interleaving multi-energy x-ray energy operation of a standing wave linear accelerator |
CN104332373A (en) * | 2014-11-10 | 2015-02-04 | 中国工程物理研究院应用电子学研究所 | Cold cathode capable of generating multiple cylindrical intense relativistic electron beams |
CN110060911A (en) * | 2019-05-09 | 2019-07-26 | 电子科技大学 | A kind of slow-wave structure of wide-band high gain |
CN110493947A (en) * | 2019-08-14 | 2019-11-22 | 中国科学院近代物理研究所 | A kind of voltage biasing structure for accelerator radio frequency resonant cavity high power input coupler |
-
2020
- 2020-04-07 CN CN202010264054.4A patent/CN111341631B/en active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3373309A (en) * | 1962-10-03 | 1968-03-12 | Siemens Ag | Electron beam tube for frequency multiplication |
EP0809271A2 (en) * | 1996-05-22 | 1997-11-26 | Frederick Michael Mako | Electron gun |
JPH10303000A (en) * | 1997-04-22 | 1998-11-13 | Mitsubishi Heavy Ind Ltd | Superconductive accelerating cavity and its manufacture |
CN1292928A (en) * | 1998-01-08 | 2001-04-25 | 利通系统有限公司 | M-type microwave device |
CN1294750A (en) * | 1998-01-08 | 2001-05-09 | 利通系统有限公司 | Magnetron |
CN101770921A (en) * | 2008-12-30 | 2010-07-07 | 中国科学院电子学研究所 | Frequency-multiplier klystron and manufacture method thereof |
US20130063052A1 (en) * | 2010-03-05 | 2013-03-14 | Accuray, Inc. | Interleaving multi-energy x-ray energy operation of a standing wave linear accelerator |
CN104332373A (en) * | 2014-11-10 | 2015-02-04 | 中国工程物理研究院应用电子学研究所 | Cold cathode capable of generating multiple cylindrical intense relativistic electron beams |
CN110060911A (en) * | 2019-05-09 | 2019-07-26 | 电子科技大学 | A kind of slow-wave structure of wide-band high gain |
CN110493947A (en) * | 2019-08-14 | 2019-11-22 | 中国科学院近代物理研究所 | A kind of voltage biasing structure for accelerator radio frequency resonant cavity high power input coupler |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN113838727A (en) * | 2021-09-16 | 2021-12-24 | 电子科技大学 | A miniaturized high-power klystron based on a single-ridge CeSRR unit |
Also Published As
Publication number | Publication date |
---|---|
CN111341631B (en) | 2021-05-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
Srivastava | THz vacuum microelectronic devices | |
CN111341630A (en) | A Photocathode Excited Electromagnetic Wave Generator | |
CN111029231B (en) | Spiral line-based hybrid slow wave structure and design method thereof | |
JP2010519695A (en) | High frequency helix amplifier and oscillator | |
Levush et al. | Vacuum electronics: Status and trends | |
Nix et al. | Demonstration of efficient beam-wave interaction for a MW-level 48 GHz gyroklystron amplifier | |
CN111341631A (en) | An Electromagnetic Wave Generator Using Secondary Electron Multiplication | |
He et al. | Numerical simulation of a gyro-BWO with a helically corrugated interaction region, cusp electron gun and depressed collector | |
CN111383875B (en) | Electromagnetic wave generator with secondary electron multiplication film coated on inner wall | |
Roitman et al. | Sub-millimeter waves from a compact, low voltage extended interaction klystron | |
CN114823252B (en) | A bidirectional multi-injection traveling wave cascade amplifier based on cold cathode | |
US7679462B2 (en) | Apparatus and method for producing electromagnetic oscillations | |
US6885152B2 (en) | Multilayer field emission klystron | |
He et al. | The Development of broadband millimeter-wave and terahertz gyro-TWAs | |
Gong et al. | Planar Slow Wave Structure Traveling Wave Tubes: Design, Fabrication and Experiment | |
Naumenko | Survey of existing designs of millimeter wave band magnetrons | |
CN114975040B (en) | Bidirectional multi-injection multi-cavity cascade amplifier based on cold cathode | |
Kumar et al. | Design of the radio frequency section of a V-band Klystron | |
İzmir et al. | Design and simulation study of helix traveling wave amplifier for ku-band applications | |
Ryskin et al. | Multiple-tunnel microfabricated slow-wave structures for millimeter-band traveling-wave tubes with multiple sheet electron beams | |
丁冲 et al. | Semi-circularly folded microstrip meander line slow-wave structure for Ka-band traveling-wave tube with cylindrical electron beam | |
Abe et al. | Vacuum device applications | |
Navrotsky et al. | Development of Electron-Optic System with Compression of Multiple Elliptic Electron Beam | |
Natani et al. | Design of C band 120W Space TWT | |
Malsaria et al. | Simulation of Beam Wave Interaction for a helix space TWT's |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |