CN114975040B - Bidirectional multi-injection multi-cavity cascade amplifier based on cold cathode - Google Patents
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- 238000002347 injection Methods 0.000 title claims abstract description 43
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- 230000002457 bidirectional effect Effects 0.000 title abstract description 11
- 230000003993 interaction Effects 0.000 claims abstract description 141
- 238000010894 electron beam technology Methods 0.000 claims abstract description 32
- 230000008878 coupling Effects 0.000 claims abstract description 15
- 238000010168 coupling process Methods 0.000 claims abstract description 15
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- 230000003321 amplification Effects 0.000 claims abstract description 9
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- 238000005516 engineering process Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 6
- 238000004891 communication Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000005192 partition Methods 0.000 description 4
- 238000012546 transfer Methods 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004044 response Effects 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000011084 recovery Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000002041 carbon nanotube Substances 0.000 description 1
- 229910021393 carbon nanotube Inorganic materials 0.000 description 1
- 239000010406 cathode material Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 238000003745 diagnosis Methods 0.000 description 1
- 230000005670 electromagnetic radiation Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 229910021389 graphene Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004347 surface barrier Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
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Abstract
本发明属于微波、毫米波及太赫兹频段真空电子器件领域，具体提供一种基于冷阴极的双向多注多腔级联放大器，采用包括多个互作用腔组的多腔扩展互作用结构、以及与之匹配的前端与后端冷阴极平板电子枪共同构成的多电子注多腔级联的阵列结构，每个周期互作用腔结构中，通过多个矩形互作用间隙组成具有谐振特性的慢波电路，共用同一电子注通道的互作用腔之间通过经过调制的电子束来完成电磁能量的传递和放大，而工作于不同电子注之间的互作用腔又可以通过矩形耦合槽来完成电磁能量的传递，由于谐振慢波电路具有高增益的特性，而整个系统由多个互作用腔组级联构成，最终使得本发明具有超高增益的优点；同时，本发明同样具有超高互作用效率的优点。
The present invention belongs to the field of vacuum electronic devices in microwave, millimeter wave and terahertz frequency bands, and specifically provides a bidirectional multi-injection multi-cavity cascade amplifier based on a cold cathode, which adopts a multi-cavity extended interaction structure including a plurality of interaction cavity groups, and a multi-electron injection multi-cavity cascade array structure composed of front-end and rear-end cold cathode flat electron guns matched therewith. In each periodic interaction cavity structure, a slow-wave circuit with resonance characteristics is formed by a plurality of rectangular interaction gaps, and the interaction cavities sharing the same electron injection channel complete the transmission and amplification of electromagnetic energy through modulated electron beams, and the interaction cavities working between different electron injections can complete the transmission of electromagnetic energy through rectangular coupling slots. Since the resonant slow-wave circuit has the characteristic of high gain, and the entire system is composed of a plurality of interaction cavity groups cascaded, the present invention finally has the advantage of ultra-high gain; at the same time, the present invention also has the advantage of ultra-high interaction efficiency.
Description
技术领域Technical Field
本发明属于微波、毫米波及太赫兹频段真空电子器件领域，具体的说提供了一种基于冷阴极的双向多电子注、多腔级联的高增益、高效率注波互作用放大器。The present invention belongs to the field of vacuum electronic devices in microwave, millimeter wave and terahertz frequency bands, and specifically provides a high-gain and high-efficiency wave injection interaction amplifier based on a cold cathode bidirectional multi-electron injection and multi-cavity cascade.
背景技术Background Art
真空电子器件作为现代军事应用和国民经济众多领域的重要组成部分，其在通信、雷达、电子对抗、卫星通信、射电天文、广播电台、以及医学诊断治疗等领域都具有广泛的应用。然而自20世纪末开始，随着半导体产业和集成电路技术的迅猛发展，真空电子器件在相当大的电子信息领域逐渐失去了主导地位，并且正在承受着固态电子器件发展的冲击。但是，由于新型半导体器件仍然不是很成熟，因此目前所发展的固态功率器件在能量效率、工作频率、最大输出功率、可靠性方面仍存在着很大的弊端和局限性。一系列的不利因素都限制了固态功率器件在耐高温、大功率、高频率、强辐射等高标准要求条件下的应用。新一代真空电子器件向高频段(毫米波、亚毫米波、太赫兹频段)、高功率、高效率、小型化、紧凑型等方向发展，它的进展代表了真空电子器件现代技术的水平，并制约着一个国家在航天、军事、通信等领域的发展。军事和通信领域提出了更高频段和更高功率的迫切要求，航天领域也一直把重量轻、能耗低的小型化、紧凑型和高效率的真空电子器件及其相关系统作为追求目标。制约这一发展的核心技术瓶颈之一就在于真空电子器件的阴极。阴极电子源是真空电子器件的重要组成部分，阴极性能优越于否，很大程度上决定了器件的整体性能。As an important part of modern military applications and many fields of the national economy, vacuum electronic devices have been widely used in communications, radar, electronic countermeasures, satellite communications, radio astronomy, radio stations, and medical diagnosis and treatment. However, since the end of the 20th century, with the rapid development of the semiconductor industry and integrated circuit technology, vacuum electronic devices have gradually lost their dominant position in a considerable electronic information field and are bearing the impact of the development of solid-state electronic devices. However, since the new semiconductor devices are still not very mature, the solid-state power devices currently developed still have great disadvantages and limitations in terms of energy efficiency, operating frequency, maximum output power, and reliability. A series of unfavorable factors limit the application of solid-state power devices under high-standard requirements such as high temperature resistance, high power, high frequency, and strong radiation. The new generation of vacuum electronic devices is developing in the direction of high frequency bands (millimeter wave, submillimeter wave, terahertz frequency band), high power, high efficiency, miniaturization, and compactness. Its progress represents the level of modern technology of vacuum electronic devices and restricts the development of a country in the fields of aerospace, military, and communications. The military and communications fields have put forward urgent requirements for higher frequency bands and higher powers. The aerospace field has also been pursuing miniaturized, compact and efficient vacuum electronic devices and related systems with light weight and low energy consumption. One of the core technical bottlenecks restricting this development is the cathode of vacuum electronic devices. The cathode electron source is an important component of vacuum electronic devices. The superiority of the cathode performance largely determines the overall performance of the device.
目前，传统的真空电子器件普遍是利用热阴极作为电子发射源，随着科技的进步和发展，热阴极材料发射技术已经日趋成熟，然而热阴极发射系统仍存在许多弊端：1)热阴极通常工作在高温环境中，因此要求阴极系统有很高的的耐热性，这就直接导致热阴极系统工艺复杂、成本较高且体积笨重；2)上千度的高温工作环境容易致阴极系统灯丝的断裂或短路，损坏器件，阴极寿命短；3)系统启动时间较长，热阴极系统需要很长的加热时间才能达到工作所需的温度；这些都限制了热阴极电子光学系统的进一步发展。基于场发射的阴极被称为冷阴极，这是因为场发射是在强电场下固体内部电子跃迁过表面势垒直接进入真空的电子发射，它是一个量子隧穿过程，也是电子在不激发状态下就能进入真空的过程，这样的过程不需要额外的能量来激发电子，可在常温下进行，响应速度小于纳秒量级，出射电子具有相同的初速度和方向，电子发射密度高。因此，场发射冷阴极具有功耗低、响应速度快、电流密度大(可达每平方厘米10万安培以上)的优点。纳米材料与技术研究的进展，促进了冷阴极的制备技术和性能取得快速发展；同时，纳微结构的场发射冷阴极还具有高分辨率、高响应速度、小型化等特点，采用纳微结构场发射冷阴极电子源是实现阴极和器件性能变革的希望，符合新一代真空电子器件高频率高效率的发展特征。At present, traditional vacuum electronic devices generally use hot cathodes as electron emission sources. With the advancement and development of science and technology, the emission technology of hot cathode materials has become increasingly mature. However, there are still many disadvantages in the hot cathode emission system: 1) Hot cathodes usually work in high temperature environments, so the cathode system is required to have high heat resistance, which directly leads to complex processes, high costs and bulky volumes of hot cathode systems; 2) The high temperature working environment of thousands of degrees can easily cause the cathode system filament to break or short-circuit, damage the device, and shorten the cathode life; 3) The system startup time is long, and the hot cathode system requires a long heating time to reach the required working temperature; all these limit the further development of hot cathode electron optical systems. The cathode based on field emission is called a cold cathode, because field emission is the electron emission in which electrons in the solid jump across the surface barrier directly into the vacuum under a strong electric field. It is a quantum tunneling process, and it is also a process in which electrons can enter the vacuum without being excited. Such a process does not require additional energy to excite electrons and can be carried out at room temperature. The response speed is less than nanoseconds, and the emitted electrons have the same initial velocity and direction, and the electron emission density is high. Therefore, the field emission cold cathode has the advantages of low power consumption, fast response speed, and high current density (up to 100,000 amperes per square centimeter). The progress of nanomaterial and technology research has promoted the rapid development of cold cathode preparation technology and performance; at the same time, the nano-microstructured field emission cold cathode also has the characteristics of high resolution, high response speed, and miniaturization. The use of nano-microstructured field emission cold cathode electron source is the hope for realizing the transformation of cathode and device performance, which is in line with the development characteristics of high frequency and high efficiency of the new generation of vacuum electronic devices.
传统微波管(比如行波管、速调管、返波管和磁控管等)向毫米波段的发展取得了很大的成绩，但是沿着这一方向继续前进将会遇到原则性的限制。传统微波管的高频系统尺寸与工作波长必须具有共度性，随着器件工作频率的不断提高，高频系统的尺寸越来越小，一方面会带来制造和装配上的困难，另一方面也使得电子注与高频场产生互作用的空间和时间越来越小，使得电子注的速度和密度调制不充分，器件的互作用效率和输出功率受到严重限制；正是这一原因成为传统微波管向毫米波、亚毫米波、太赫兹频段发展的严重障碍。为了发展新一代高效率大功率可集成的真空微电子辐射源，阴极和注波互作用的结合研究将会带来重大突破。Traditional microwave tubes (such as traveling wave tubes, klystrons, backward wave tubes and magnetrons) have made great achievements in the development of millimeter wave bands, but continuing to move forward in this direction will encounter fundamental limitations. The high-frequency system size of traditional microwave tubes must be compatible with the operating wavelength. As the operating frequency of the device continues to increase, the size of the high-frequency system is getting smaller and smaller. On the one hand, it will bring difficulties in manufacturing and assembly. On the other hand, it will also make the space and time for the interaction between the electron beam and the high-frequency field smaller and smaller, making the speed and density modulation of the electron beam insufficient, and the interaction efficiency and output power of the device are severely limited; it is precisely this reason that has become a serious obstacle to the development of traditional microwave tubes to millimeter wave, submillimeter wave and terahertz frequency bands. In order to develop a new generation of high-efficiency, high-power and integrated vacuum microelectronic radiation sources, the combined research of cathode and beam wave interaction will bring major breakthroughs.
发明内容Summary of the invention
本发明的目的在于针对背景技术存在的不足，提供一种基于冷阴极的双向多注多腔级联放大器，采用包括多个互作用腔组的多腔扩展互作用结构、以及与之匹配的前端冷阴极平板电子枪与后端冷阴极平板电子枪共同构成的多电子注多腔级联的阵列结构，每个周期互作用腔结构中，通过多个矩形互作用间隙组成具有谐振特性的慢波电路；共用同一电子注通道的互作用腔之间通过经过调制的电子束来完成电磁能量的传递和放大，而工作于不同电子束之间的互作用腔又可以通过矩形耦合槽来完成电磁能量的传递，由于谐振慢波电路具有高增益的特性，而整个系统由多个互作用腔组级联构成，最终使得本发明具有超高增益的优点；同时，由前端阴极所发射的电子在经过注波互作用后会打在后端阴极上，而由后端阴极所发射的电子在经过注波互作用后会打在前端阴极上，整个电路具有很好的能量回收机制，使得本发明同样具有超高互作用效率的优点。The purpose of the present invention is to provide a bidirectional multi-injection multi-cavity cascade amplifier based on a cold cathode in view of the shortcomings of the background technology. The amplifier adopts a multi-cavity extended interaction structure including a plurality of interaction cavity groups, and a multi-electron injection multi-cavity cascade array structure composed of a front cold cathode flat plate electron gun and a rear cold cathode flat plate electron gun matched therewith. In each period of the interaction cavity structure, a slow-wave circuit with a resonant characteristic is formed by a plurality of rectangular interaction gaps. The interaction cavities sharing the same electron injection channel complete the transmission and amplification of electromagnetic energy through a modulated electron beam, and the interaction cavities working between different electron beams can complete the transmission of electromagnetic energy through a rectangular coupling slot. Since the resonant slow-wave circuit has the characteristic of high gain, and the entire system is composed of a plurality of interaction cavity groups cascaded, the present invention finally has the advantage of ultra-high gain. At the same time, the electrons emitted by the front cathode will hit the rear cathode after the injection wave interaction, and the electrons emitted by the rear cathode will hit the front cathode after the injection wave interaction. The entire circuit has a good energy recovery mechanism, so that the present invention also has the advantage of ultra-high interaction efficiency.
为实现上述目的，本发明采用的技术方案为：To achieve the above object, the technical solution adopted by the present invention is:
一种基于冷阴极的双向多注多腔级联放大器，包括：多腔扩展互作用结构、前端冷阴极平板电子枪及后端冷阴极平板电子枪；其特征在于，所述前端冷阴极平板电子枪与后端冷阴极平板电子枪分别通过绝缘介质外壳密封连接于多腔扩展互作用结构的前端与后端；所述多腔扩展互作用结构包括：N个互作用腔组，每个互作用腔组由输入梯形互作用腔、第一放大梯形互作用腔、第二放大梯形互作用腔与输出梯形互作用腔构成；所述输入梯形互作用腔与第一放大梯形互作用腔设置于同一轴线上，两腔共用同一个矩形电子注通道，且共用前端冷阴极平板电子枪发射的带状电子束；所述第二放大梯形互作用腔与输出梯形互作用腔设置于同一轴线上，由同一个带状束矩形束流束隧道贯穿、且共用后端冷阴极平板电子枪发射的带状电子束；所述第一放大梯形互作用腔与第二放大梯形互作用腔并排设置、且通过矩形耦合槽相互连通；所述输入梯形互作用腔开设矩形输入槽、用于连接输入波导以馈入输入信号，所述输出梯形互作用腔开设矩形输出槽、用于连接输出波导以输出放大信号。A cold cathode-based bidirectional multi-injection multi-cavity cascade amplifier, comprising: a multi-cavity extended interaction structure, a front-end cold cathode flat-plate electron gun and a rear-end cold cathode flat-plate electron gun; characterized in that the front-end cold cathode flat-plate electron gun and the rear-end cold cathode flat-plate electron gun are respectively sealed and connected to the front end and the rear end of the multi-cavity extended interaction structure through an insulating dielectric shell; the multi-cavity extended interaction structure comprises: N interaction cavity groups, each interaction cavity group is composed of an input trapezoidal interaction cavity, a first amplifying trapezoidal interaction cavity, a second amplifying trapezoidal interaction cavity and an output trapezoidal interaction cavity; the input trapezoidal interaction cavity and the first amplifying trapezoidal interaction cavity are arranged on the same axis. The two cavities share the same rectangular electron injection channel and the same strip electron beam emitted by the front cold cathode flat plate electron gun; the second amplifying trapezoidal interaction cavity and the output trapezoidal interaction cavity are arranged on the same axis, penetrated by the same strip beam rectangular beam tunnel, and share the same strip electron beam emitted by the rear cold cathode flat plate electron gun; the first amplifying trapezoidal interaction cavity and the second amplifying trapezoidal interaction cavity are arranged side by side and are interconnected through a rectangular coupling slot; the input trapezoidal interaction cavity has a rectangular input slot for connecting the input waveguide to feed the input signal, and the output trapezoidal interaction cavity has a rectangular output slot for connecting the output waveguide to output the amplified signal.
进一步的，所述梯形互作用腔内部为真空，具有多个周期性的矩形互作用间隙，其互作用间隙垂直于同一个轴线排布，且互作用间隙之间通过两侧耦合槽相互耦合连通，电子注在各个互作用间隙内与高频场相互作用。Furthermore, the interior of the trapezoidal interaction cavity is a vacuum, and has a plurality of periodic rectangular interaction gaps, wherein the interaction gaps are arranged perpendicular to the same axis, and the interaction gaps are coupled and connected to each other through coupling grooves on both sides, and the electron beam interacts with the high-frequency field in each interaction gap.
进一步的，所述前端冷阴极平板电子枪与后端冷阴极平板电子枪采用相同结构、均由阴极基板与阴极发射体构成，所述阴极发射体贴敷于阴极基板表面或嵌入阴极基板中，阴极发射体的数量为N。Furthermore, the front cold cathode flat electron gun and the rear cold cathode flat electron gun have the same structure, both consisting of a cathode substrate and a cathode emitter, the cathode emitter is attached to the surface of the cathode substrate or embedded in the cathode substrate, and the number of cathode emitters is N.
需要说明的是：所述互作用腔组中，共用同一矩形电子注通道的互作用腔之间通过经过调制的电子束来完成电磁能量的传递和放大，而工作于不同电子束之间的互作用腔又通过矩形耦合槽来完成电磁能量的传递，相比于传统的多注器件，该互作用腔组结构能够在沿电子注方向尽可能的减少周期数以缩短器件的纵向长度，而替代以更多的横向级联互作用腔组来满足整个器件的高增益要求，主要体现在对减弱均匀聚焦磁场的要求以改善器件的工作条件。It should be noted that: in the interaction cavity group, the interaction cavities sharing the same rectangular electron injection channel complete the transfer and amplification of electromagnetic energy through the modulated electron beam, and the interaction cavities working between different electron beams complete the transfer of electromagnetic energy through the rectangular coupling slot. Compared with the traditional multi-injection device, the interaction cavity group structure can reduce the number of periods as much as possible along the electron injection direction to shorten the longitudinal length of the device, and replace it with more transverse cascade interaction cavity groups to meet the high gain requirements of the entire device, which is mainly reflected in the requirement to weaken the uniform focusing magnetic field to improve the working conditions of the device.
本发明的有益效果在于：The beneficial effects of the present invention are:
本发明提供一种基于冷阴极的双向多注多腔级联放大器，其中，所述多腔扩展互作用结构、及与之匹配的前端冷阴极平板电子枪与后端冷阴极平板电子枪采用可横向扩展设计，能够组成多电子注多腔级联的阵列结构；每个周期互作用腔结构中，通过多个矩形互作用间隙组成具有谐振特性的慢波电路，共用同一个电子注通道工作的互作用腔之间通过经过调制的电子束来完成电磁能量的传递和放大，而工作于不同电子束之间的互作用腔又可以通过矩形耦合槽来完成电磁能量的传递，整个系统能够由多个互作用腔组级联构成。更为具体的讲：每个互作用腔组结构中，从输入梯形互作用腔开始，由前端阴极发射体所发出的电子束会受到从输入端口馈入的输入信号而产生电子的速度调制和密度调制，经过调制后的电子束会带来群聚效果并到达第一放大梯形互作用腔后会在腔内激励起与之相匹配的高频模式场，所建立起的高频模式场也会反过来影响受到调制的电子束并产生注波互作用，与此同时，第一放大梯形互作用腔内的高频模式场会通过矩形耦合槽把场能量传递到第二放大梯形互作用腔；进一步的，由后端阴极发射体所发出的电子束会受到第二放大梯形互作用腔内的高频场而产生电子的速度调制和密度调制，此时，从第一放大梯形互作用腔内耦合到第二放大梯形互作用腔内的高频场即当作由前级放大的输入信号，放大后的输入信号会对电子束产生更强的调制；由此而产生的连锁反应通过横向级联更多的互作用腔，在最终的输出互作用腔产生更高功率的电磁辐射，并且，级联的互作用腔越多，整个电路的增益也就越高。需要注意的是，整个电路可以工作于多种模式，而且不同数量的互作用腔级联也可以视为不同的工作模式场，多种模式同时工作能够起到增大带宽的效果。The present invention provides a cold cathode-based bidirectional multi-injection multi-cavity cascade amplifier, wherein the multi-cavity extended interaction structure, and the front cold cathode flat-plate electron gun and the rear cold cathode flat-plate electron gun matched therewith are designed to be lateraly expandable, and can form an array structure of multi-electron injection multi-cavity cascade; in each periodic interaction cavity structure, a slow-wave circuit with resonance characteristics is formed by a plurality of rectangular interaction gaps, and the interaction cavities working in the same electron injection channel complete the transmission and amplification of electromagnetic energy through modulated electron beams, and the interaction cavities working between different electron beams can complete the transmission of electromagnetic energy through rectangular coupling slots, and the entire system can be composed of a plurality of interaction cavity groups cascaded. More specifically: in each interaction cavity group structure, starting from the input trapezoidal interaction cavity, the electron beam emitted by the front cathode emitter will be affected by the input signal fed from the input port to generate electron velocity modulation and density modulation. The modulated electron beam will bring a clustering effect and after reaching the first amplifying trapezoidal interaction cavity, it will excite a matching high-frequency mode field in the cavity. The established high-frequency mode field will in turn affect the modulated electron beam and generate injection wave interaction. At the same time, the high-frequency mode field in the first amplifying trapezoidal interaction cavity will transfer the field energy to the second amplifying cavity through the rectangular coupling slot. Trapezoidal interaction cavity; further, the electron beam emitted by the rear cathode emitter will be affected by the high-frequency field in the second amplifying trapezoidal interaction cavity to produce electron velocity modulation and density modulation. At this time, the high-frequency field coupled from the first amplifying trapezoidal interaction cavity to the second amplifying trapezoidal interaction cavity is regarded as the input signal amplified by the previous stage, and the amplified input signal will produce stronger modulation on the electron beam; the resulting chain reaction will produce higher-power electromagnetic radiation in the final output interaction cavity through the transverse cascade of more interaction cavities, and the more cascaded interaction cavities, the higher the gain of the entire circuit. It should be noted that the entire circuit can operate in multiple modes, and different numbers of interaction cavities cascaded can also be regarded as different working mode fields. The simultaneous operation of multiple modes can increase the bandwidth.
另外，由前端阴极所发射的电子在经过注波互作用后会打在后端阴极上，而由后端阴极所发射的电子在经过注波互作用后会打在前端阴极上，整个结构具有很好的能量回收机制，由此得到了一个几乎完美的电子束与电磁波的能量转换方案。In addition, the electrons emitted by the front cathode will hit the rear cathode after the injection-wave interaction, and the electrons emitted by the rear cathode will hit the front cathode after the injection-wave interaction. The entire structure has a good energy recovery mechanism, thus obtaining an almost perfect energy conversion scheme for electron beams and electromagnetic waves.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明中基于冷阴极的双向多注多腔级联放大器的整体结构示意图；FIG1 is a schematic diagram of the overall structure of a bidirectional multi-injection multi-cavity cascade amplifier based on a cold cathode in the present invention;
图2为本发明中基于冷阴极的双向多注多腔级联放大器的剖视结构示意图；FIG2 is a schematic cross-sectional view of the cold cathode-based bidirectional multi-injection multi-cavity cascade amplifier of the present invention;
其中，1为前端冷阴极平板电子枪、1-1为前端阴极发射体、1-2为前端阴极板，2为后端冷阴极平板电子枪、2-1为后端阴极发射体、2-2为后端阴极板，3-1为前端绝缘介质外壳、3-2为后端绝缘介质外壳，4为多腔扩展互作用结构，4-1为输入梯形互作用腔、4-2为第一放大梯形互作用腔、4-3为第二放大梯形互作用腔、4-4为输出梯形互作用腔，5为矩形耦合槽，6-1为输入腔窗片、6-2为输出腔窗片，7-1为前端发射电子注通道、7-2为后端发射电子注通道，8为互作用间隙，9为互作用腔内金属隔板，10-1为输入端口法兰、10-2为输出端口法兰。Among them, 1 is a front cold cathode flat-plate electron gun, 1-1 is a front cathode emitter, 1-2 is a front cathode plate, 2 is a rear cold cathode flat-plate electron gun, 2-1 is a rear cathode emitter, 2-2 is a rear cathode plate, 3-1 is a front insulating dielectric shell, 3-2 is a rear insulating dielectric shell, 4 is a multi-cavity extended interaction structure, 4-1 is an input trapezoidal interaction cavity, 4-2 is a first amplified trapezoidal interaction cavity, 4-3 is a second amplified trapezoidal interaction cavity, 4-4 is an output trapezoidal interaction cavity, 5 is a rectangular coupling slot, 6-1 is an input cavity window, 6-2 is an output cavity window, 7-1 is a front emission electron beam channel, 7-2 is a rear emission electron beam channel, 8 is an interaction gap, 9 is a metal partition in the interaction cavity, 10-1 is an input port flange, and 10-2 is an output port flange.
图3为本发明实施例中基于冷阴极的双向多注多腔级联放大器在工作状态的粒子轨迹半剖面图。3 is a half-section diagram of particle trajectories of a cold cathode-based bidirectional multi-injection multi-cavity cascade amplifier in a working state according to an embodiment of the present invention.
具体实施方式DETAILED DESCRIPTION
下面结合附图和实施列对本发明做进一步详细说明，以使本发明的目的、技术方案及技术效果更加清楚、完整。The present invention is further described in detail below in conjunction with the accompanying drawings and embodiments to make the purpose, technical solutions and technical effects of the present invention clearer and more complete.
本实施列提供了一种基于冷阴极的双向多电子注、多腔级联的高增益、高效率注波互作用放大器，以W波段的双向双电子注冷阴极多腔级联注波互作用放大器结构为例，其结构如图1、图2所示，其中，X方向为长边尺寸方向，Y轴方向为高边尺寸方向，Z轴方向为宽边尺寸方向；具体包括：多腔扩展互作用结构4，通过前端绝缘介质外壳3-1与多腔扩展互作用结构前端密封连接的前端冷阴极平板电子枪1，通过后端绝缘介质外壳3-2与多腔扩展互作用结构后端密封连接的后端冷阴极平板电子枪2；其中，The present embodiment provides a high-gain, high-efficiency wave injection interaction amplifier based on a cold cathode bidirectional multi-electron injection and multi-cavity cascade. Taking the W-band bidirectional dual-electron injection cold cathode multi-cavity cascade wave injection interaction amplifier structure as an example, its structure is shown in Figures 1 and 2, wherein the X direction is the long side dimension direction, the Y axis direction is the high side dimension direction, and the Z axis direction is the wide side dimension direction; specifically comprising: a multi-cavity extended interaction structure 4, a front-end cold cathode flat-plate electron gun 1 sealedly connected to the front end of the multi-cavity extended interaction structure through a front-end insulating dielectric shell 3-1, and a rear-end cold cathode flat-plate electron gun 2 sealedly connected to the rear end of the multi-cavity extended interaction structure through a rear-end insulating dielectric shell 3-2; wherein,
前端冷阴极平板电子枪包括：前端阴极发射体1-1与前端阴极板1-2，所述前端阴极发射体1-1半嵌入到前端阴极板1-2内；前端阴极发射体1-1与前端发射电子注通道7-1相对应，由前端阴极发射体发射的电子注将会贯穿输入梯形互作用腔4-1与第一放大梯形互作用腔4-2，最终打到后端阴极板2-2上，被后端冷阴极平板电子枪所收集；所述前端阴极发射体1-1的尺寸为(长×高)2×0.3mm、厚度为0.1mm，材质为碳纳米管或石墨烯；所述前端阴极板的尺寸为(长×高)12×4mm、厚度为1mm，材质为无磁不锈钢；后端冷阴极平板电子枪与前端冷阴极平板电子枪结构尺寸相同，具有完全相同的功效，包括：后端阴极发射体2-1与后端阴极板2-2；The front-end cold cathode flat-plate electron gun comprises: a front-end cathode emitter 1-1 and a front-end cathode plate 1-2, wherein the front-end cathode emitter 1-1 is half-embedded in the front-end cathode plate 1-2; the front-end cathode emitter 1-1 corresponds to the front-end emission electron beam channel 7-1, and the electron beam emitted by the front-end cathode emitter will penetrate the input trapezoidal interaction cavity 4-1 and the first amplifying trapezoidal interaction cavity 4-2, and finally hit the rear-end cathode plate 2-2, and be collected by the rear-end cold cathode flat-plate electron gun; the size of the front-end cathode emitter 1-1 is (length×height) 2×0.3mm, the thickness is 0.1mm, and the material is carbon nanotube or graphene; the size of the front-end cathode plate is (length×height) 12×4mm, the thickness is 1mm, and the material is non-magnetic stainless steel; the rear-end cold cathode flat-plate electron gun has the same structural size as the front-end cold cathode flat-plate electron gun and has exactly the same function, including: the rear-end cathode emitter 2-1 and the rear-end cathode plate 2-2;
前端绝缘介质外壳3-1与后端绝缘介质外壳3-2的结构尺寸相同，外壳的内腔尺寸为(长×宽×高)11×3×3mm、外腔尺寸(长×宽×高)12×4×3mm，腔壁厚0.5mm，材质为99#陶瓷；所述前端绝缘介质外壳一端面与前端阴极板密封焊接、另一端面与多腔扩展互作用结构外壳密封焊接，所述后端绝缘介质外壳一端面与后端阴极板密封焊接、另一端面与多腔扩展互作用结构外壳密封焊接；The front-end insulating dielectric shell 3-1 and the rear-end insulating dielectric shell 3-2 have the same structural dimensions, the inner cavity dimensions of the shell are (length × width × height) 11 × 3 × 3mm, the outer cavity dimensions are (length × width × height) 12 × 4 × 3mm, the cavity wall thickness is 0.5mm, and the material is 99 # ceramic; one end face of the front-end insulating dielectric shell is sealed and welded to the front-end cathode plate, and the other end face is sealed and welded to the multi-cavity expansion interaction structure shell, and one end face of the rear-end insulating dielectric shell is sealed and welded to the rear-end cathode plate, and the other end face is sealed and welded to the multi-cavity expansion interaction structure shell;
多腔扩展互作用结构4由四个梯形互作用腔组成，包括：输入梯形互作用腔4-1、第一放大梯形互作用腔4-2、第二放大梯形互作用腔4-3、输出梯形互作用腔4-4；梯形互作用腔内部真空、由多个互作用间隙8与腔内金属隔板9组成的周期谐振结构；所述腔内金属隔板9的尺寸为(长×宽×高)2.4×0.46×2mm，腔内金属隔板上开有带状电子注通道；所述输入梯形互作用腔4-1与第一放大梯形互作用腔4-2共用前端发射电子注通道7-1，所述输出梯形互作用腔4-4与第二放大梯形互作用腔4-3共用后端发射电子注通道7-2，所述前端发射电子注通道7-1与后端发射电子注通道7-2的结构尺寸相同且相互平行，电子注通道尺寸为(长×宽×高)15×2.5×0.4mm；所述第一放大梯形互作用腔4-2与第二放大梯形互作用腔4-3通过矩形耦合槽5相互耦合连通，矩形耦合槽5的尺寸(长×宽×高)1.4×1.6×0.2mm；所述输入梯形互作用腔4-1一侧开有矩形耦合孔洞与输入波导相连通，输入波导端口与输入窗片6-1封接，输入窗片尺寸为(长×宽×高)7.08×1.56×0.5，材质为氧化铝陶瓷或者蓝宝石；所述输入波导以及输入窗片又与外部的输入端口法兰10-1相连；所述输出梯形互作用腔4-4一侧开有矩形耦合孔洞与输出波导相连通，输出波导端口与输出窗片6-2封接，输出波导以及输出窗片又与外部的输出端口法兰10-2相连；输出波导和输出窗片分别与输入波导和输入窗片结构尺寸相同；The multi-cavity extended interaction structure 4 is composed of four trapezoidal interaction cavities, including: an input trapezoidal interaction cavity 4-1, a first amplified trapezoidal interaction cavity 4-2, a second amplified trapezoidal interaction cavity 4-3, and an output trapezoidal interaction cavity 4-4; the trapezoidal interaction cavity is vacuum inside, and is a periodic resonant structure composed of multiple interaction gaps 8 and a metal partition 9 in the cavity; the size of the metal partition 9 in the cavity is (length×width×height) 2.4×0.46×2mm, and a strip-shaped electron injection channel is opened on the metal partition in the cavity; the input trapezoidal interaction cavity 4-1 and the first amplified trapezoidal interaction cavity 4-2 share a front-end emission electron injection channel 7-1, and the output trapezoidal interaction cavity 4-4 and the second amplified trapezoidal interaction cavity 4-3 share a rear-end emission electron injection channel 7-2, and the front-end emission electron injection channel 7-1 and the rear-end emission electron injection channel 7-2 have the same structural dimensions and are parallel to each other, and the electron injection channel size is (length×width×height) 15×2 .5×0.4mm; the first amplified trapezoidal interaction cavity 4-2 and the second amplified trapezoidal interaction cavity 4-3 are coupled and connected to each other through a rectangular coupling slot 5, and the size of the rectangular coupling slot 5 (length×width×height) is 1.4×1.6×0.2mm; a rectangular coupling hole is opened on one side of the input trapezoidal interaction cavity 4-1 to communicate with the input waveguide, and the input waveguide port is sealed with the input window 6-1, and the size of the input window is (length×width×height) 7.08×1.56×0.5, and the material is alumina ceramic or sapphire; the input waveguide and the input window are connected to the external input port flange 10-1; a rectangular coupling hole is opened on one side of the output trapezoidal interaction cavity 4-4 to communicate with the output waveguide, and the output waveguide port is sealed with the output window 6-2, and the output waveguide and the output window are connected to the external output port flange 10-2; the output waveguide and the output window have the same structural dimensions as the input waveguide and the input window respectively;
利用微波真空电子器件工艺将多腔注波互作用放大器各个部件进行组装焊接成为一个整体，并进行真空排气，使得整个器件内部形成绝对的真空环境。The various components of the multi-cavity injection wave interaction amplifier are assembled and welded into a whole using microwave vacuum electronic device technology, and then vacuum exhausted to form an absolute vacuum environment inside the entire device.
上述基于冷阴极的多注高次模注波互作用结构工作过程如下：The working process of the above-mentioned multi-injection high-order mode injection wave interaction structure based on cold cathode is as follows:
前端阴极板1-2与后端阴极板2-2同时接负高压，多腔扩展互作用结构4外壳接地，冷阴极平板电子枪与多腔扩展互作用结构之间形成的电势差作用于前端阴极发射体1-1以及后端阴极发射体2-1表面，前端和后端阴极发射体同时在强电场的作用下发射出电子，发射出的电子注通过多腔扩展互作用结构的电子注通道进入内部扩展互作用间隙。从输入梯形互作用腔4-1开始，由前端阴极发射体1-1所发出的电子束会受到从输入端口6-1馈入的输入信号而产生电子的速度调制和密度调制，经过调制后的电子束会带来群聚效果并到达第一放大梯形互作用腔4-2后会在腔内激励起与之相匹配的高频模式场，所建立起的高频模式场也会反过来影响受到调制的电子束并产生注波互作用，与此同时，第一放大梯形互作用腔4-2内的高频模式场会通过矩形耦合槽5把场能量传递到第二放大梯形互作用腔4-3，进一步的，由后端阴极发射体2-1所发出的电子束会受到第二放大梯形互作用腔4-3内的高频场而产生电子的速度调制和密度调制，这时，我们可以把从第一放大梯形互作用腔4-2内耦合到第二放大梯形互作用腔4-3内的高频场能当作由前级放大的输入信号。放大后的输入信号会对电子束产生更强的调制，由此而产生的连锁反应是通过横向级联更多的互作用腔，可以最终在输出互作用腔4-4产生更高效的注波互作用并通过输出窗片6-2进行辐射输出。The front cathode plate 1-2 and the rear cathode plate 2-2 are connected to negative high voltage at the same time, the shell of the multi-cavity extended interaction structure 4 is grounded, and the potential difference formed between the cold cathode flat-plate electron gun and the multi-cavity extended interaction structure acts on the surface of the front cathode emitter 1-1 and the rear cathode emitter 2-1. The front and rear cathode emitters simultaneously emit electrons under the action of a strong electric field, and the emitted electron beams enter the internal extended interaction gap through the electron beam channel of the multi-cavity extended interaction structure. Starting from the input trapezoidal interaction cavity 4-1, the electron beam emitted by the front cathode emitter 1-1 will be affected by the input signal fed from the input port 6-1 to generate electron velocity modulation and density modulation. The modulated electron beam will bring a clustering effect and will excite a matching high-frequency mode field in the cavity after reaching the first amplifying trapezoidal interaction cavity 4-2. The established high-frequency mode field will in turn affect the modulated electron beam and generate injection wave interaction. At the same time, the high-frequency mode field in the first amplifying trapezoidal interaction cavity 4-2 will transfer the field energy to the second amplifying trapezoidal interaction cavity 4-3 through the rectangular coupling slot 5. Further, the electron beam emitted by the rear cathode emitter 2-1 will be affected by the high-frequency field in the second amplifying trapezoidal interaction cavity 4-3 to generate electron velocity modulation and density modulation. At this time, we can regard the high-frequency field energy coupled from the first amplifying trapezoidal interaction cavity 4-2 to the second amplifying trapezoidal interaction cavity 4-3 as the input signal amplified by the previous stage. The amplified input signal will produce stronger modulation on the electron beam, and the resulting chain reaction is to produce more efficient injection wave interaction in the output interaction cavity 4-4 through the transverse cascade of more interaction cavities, and radiate output through the output window 6-2.
以上所述，仅为本发明的具体实施方式，本说明书中所公开的任一特征，除非特别叙述，均可被其他等效或具有类似目的的替代特征加以替换；所公开的所有特征、或所有方法或过程中的步骤，除了互相排斥的特征和/或步骤以外，均可以任何方式组合。The above description is only a specific implementation mode of the present invention. Any feature disclosed in this specification, unless otherwise stated, can be replaced by other alternative features that are equivalent or have similar purposes; all the disclosed features, or all the steps in the methods or processes, except for mutually exclusive features and/or steps, can be combined in any way.
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