CN111316402B - Substrate processing method and substrate processing device - Google Patents
Substrate processing method and substrate processing device Download PDFInfo
- Publication number
- CN111316402B CN111316402B CN201880072183.4A CN201880072183A CN111316402B CN 111316402 B CN111316402 B CN 111316402B CN 201880072183 A CN201880072183 A CN 201880072183A CN 111316402 B CN111316402 B CN 111316402B
- Authority
- CN
- China
- Prior art keywords
- flow path
- valve
- discharge
- substrate
- end flow
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 305
- 238000012545 processing Methods 0.000 title claims description 307
- 238000003672 processing method Methods 0.000 title claims description 25
- 239000007788 liquid Substances 0.000 claims description 346
- 238000000034 method Methods 0.000 claims description 85
- 230000008569 process Effects 0.000 claims description 77
- 238000011144 upstream manufacturing Methods 0.000 claims description 36
- 238000001035 drying Methods 0.000 claims description 17
- 239000007921 spray Substances 0.000 claims description 11
- 230000000717 retained effect Effects 0.000 claims 9
- 230000005540 biological transmission Effects 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 claims 2
- 238000005507 spraying Methods 0.000 claims 1
- 239000002904 solvent Substances 0.000 abstract description 202
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 654
- 239000000126 substance Substances 0.000 description 41
- 239000002245 particle Substances 0.000 description 29
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 20
- 230000004888 barrier function Effects 0.000 description 13
- 238000002360 preparation method Methods 0.000 description 11
- 238000007599 discharging Methods 0.000 description 10
- 230000003749 cleanliness Effects 0.000 description 9
- 230000000694 effects Effects 0.000 description 8
- 230000008859 change Effects 0.000 description 7
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 6
- 238000012546 transfer Methods 0.000 description 6
- 239000003480 eluent Substances 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000010419 fine particle Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 3
- 239000008367 deionised water Substances 0.000 description 3
- 229910021641 deionized water Inorganic materials 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 238000005192 partition Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 208000000785 Invasive Pulmonary Aspergillosis Diseases 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 239000013013 elastic material Substances 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- -1 i.e. Chemical compound 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 150000007530 organic bases Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 235000006408 oxalic acid Nutrition 0.000 description 1
- 150000002978 peroxides Chemical class 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F26—DRYING
- F26B—DRYING SOLID MATERIALS OR OBJECTS BY REMOVING LIQUID THEREFROM
- F26B5/00—Drying solid materials or objects by processes not involving the application of heat
- F26B5/005—Drying solid materials or objects by processes not involving the application of heat by dipping them into or mixing them with a chemical liquid, e.g. organic; chemical, e.g. organic, dewatering aids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02057—Cleaning during device manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Molecular Biology (AREA)
- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Abstract
By closing the solvent valve, the IPA other than the IPA that has passed through the solvent valve first among the IPA that has passed through the solvent valve is held in the front-end flow path. By opening the solvent valve, the IPA previously held in the front flow path is pushed downstream by the IPA having passed through the solvent valve, and the ejection port is caused to eject only the IPA toward the substrate. By closing the solvent valve, all the IPA having passed through the solvent valve at this time is held in the front flow path.
Description
Technical Field
The present invention relates to a substrate processing method and a substrate processing apparatus for processing a substrate. The substrate to be processed includes, for example, a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, a substrate for FPD (Flat Panel Display) of an organic EL (electroluminescence) display device, and the like.
Background
Patent document 1 discloses a single-wafer substrate processing apparatus for processing substrates one by one. The substrate processing apparatus includes a spin chuck for horizontally holding and rotating a substrate, a processing liquid nozzle for ejecting a processing liquid toward an upper surface of the substrate held by the spin chuck, a processing liquid pipe for supplying the processing liquid to the processing liquid nozzle, and a processing liquid valve interposed in the processing liquid pipe. When the treatment liquid valve is opened, the treatment liquid in the treatment liquid pipe is supplied to the treatment liquid nozzle, and when the treatment liquid nozzle is closed, the supply of the treatment liquid to the treatment liquid nozzle is stopped.
Prior art literature
Patent literature
Patent document 1 Japanese patent application laid-open No. 2012-026476
Disclosure of Invention
[ Problem ] to be solved by the invention
When the treatment fluid valve is opened, the valve body is separated from the valve seat. At this time, the valve body rubs against the valve seat, so that particles are generated in the treatment fluid valve. The fine particles are supplied to the treatment liquid nozzle together with the treatment liquid, and are discharged from the treatment liquid nozzle. Therefore, particles generated in the treatment liquid valve may adhere to the substrate.
In the same way, particles are generated in the treatment liquid valve when the treatment liquid valve is closed. The fine particles generated before the treatment liquid valve is completely closed may be supplied to the treatment liquid nozzle together with the treatment liquid. Further, there are cases where particles remain in the treatment liquid valve and are supplied to the treatment liquid nozzle together with the treatment liquid when the treatment liquid valve is opened again.
Accordingly, an object of the present invention is to provide a substrate processing method and a substrate processing apparatus capable of suppressing or preventing particles generated in a valve for switching between supply and stop of a processing liquid to a processing liquid nozzle from being supplied to a substrate.
[ Solution ] to solve the problem
An embodiment of the present invention provides a substrate processing method performed by a substrate processing apparatus including a substrate holding unit that horizontally holds a substrate, an ejection port that ejects a processing liquid that is to be processed on the substrate, an ejection valve that opens and closes between an open state in which the processing liquid passes through the ejection port and a closed state in which the processing liquid flowing toward the ejection port side is blocked, and a front-end flow path that includes an upstream end connected to the ejection valve and a downstream end connected to the ejection port and extends from the ejection valve to the ejection port, the substrate processing method including a processing liquid inflow step of flowing the processing liquid through the ejection valve by opening the ejection valve, a processing liquid holding step of holding the processing liquid in the processing liquid inflow step, in which the processing liquid that has passed through the ejection valve is held in the front-end flow path by closing the ejection valve, the processing liquid that has passed through the ejection valve in the processing liquid inflow step, and holding the processing liquid in the front-end flow path by the ejection valve, and holding the processing liquid in the front-end flow path by the ejection valve, and stopping the processing liquid flowing through the ejection valve by opening the ejection valve, the processing liquid holding step by holding the processing liquid in the front-end flow path in the processing liquid supply step by opening the ejection valve, and a supply execution step of supplying the processing liquid, which has passed through the discharge valve, to the front end flow path.
The processing liquid supplied to the discharge valve may be supplied from a tank provided in the substrate processing apparatus or may be supplied from a manufacturing factory (for example, a semiconductor manufacturing process) in which the substrate processing apparatus is installed.
According to this method, the discharge valve is opened before the processing liquid is supplied to the substrate. Thus, the processing liquid contaminated by the particles generated in the discharge valve flows from the discharge valve into the front end flow path. Then, the clean treatment liquid containing few particles flows from the discharge valve into the front end flow path. That is, the contaminated treatment liquid passes through the discharge valve first, and then, the clean treatment liquid passes through the discharge valve.
The contaminated treatment liquid is pushed downstream by the cleaned treatment liquid. When the treatment liquid flowing in the front flow path reaches the downstream end of the front flow path, the treatment liquid in the front flow path is ejected from the ejection port. Thus, the contaminated treatment liquid flowing into the front-end flow path when the discharge valve is opened is discharged from the front-end flow path. After the contaminated treatment liquid is discharged from the discharge port, the discharge valve is closed. Thereby, the clean processing liquid is held in the front-end flow path and is stationary in the front-end flow path.
Then, the discharge valve is opened again. The clean processing liquid held in the front flow path is pushed downstream by the newly flowed processing liquid, and is ejected from the ejection port toward the substrate. Thereby, the clean processing liquid is supplied to the substrate. Then, the discharge valve is closed, and the discharge of the treatment liquid from the discharge port is stopped. At the same time, all the newly introduced processing liquid is held in the front-end flow path.
In this way, the discharge valve is opened in a state where the clean processing liquid is held in the front-end flow path, and the processing liquid is discharged toward the substrate. Then, all the processing liquid having passed through the discharge valve is held in the front-end flow path. The contaminated treatment liquid is contained in the treatment liquid passing through the discharge valve. Therefore, while avoiding the discharge of the contaminated treatment liquid from the discharge port, only the clean treatment liquid can be discharged from the discharge port. Thus, since the particles contained in the processing liquid supplied to the substrate are reduced, the cleanliness of the substrate after drying can be improved.
In the present embodiment, at least one of the following features may be added to the substrate processing method.
The substrate processing method further includes a drying step of drying the substrate to which the processing liquid ejected from the ejection port in the supply execution step is attached.
According to this method, the substrate to which the processing liquid ejected from the ejection port is attached is dried. The treatment liquid discharged from the discharge port is a clean treatment liquid containing few particles. Therefore, the substrate can be dried with few particles held on the substrate. Thus, particles remaining on the dried substrate can be reduced, and the cleanliness of the dried substrate can be improved.
The substrate processing method further includes a discharging step of discharging the processing liquid, which is held in the supply stop step and first passes through the discharge valve in the supply execution step, from the front end flow path, and holding the processing liquid, which is held in the supply execution step and first passes through the discharge valve, in the front end flow path, other than the processing liquid.
The processing liquid other than the processing liquid that first passes through the discharge valve in the supply execution step may be the processing liquid newly flowing into the front end flow path via the discharge valve, or may be a part of the processing liquid held in the front end flow path in the supply stop step.
According to this method, the processing liquid held in the front-end flow path when the processing liquid is stopped is discharged from the front-end flow path by first passing through the discharge valve when the processing liquid is discharged toward the substrate. That is, the contaminated processing liquid is discharged from the front-end flow path. Therefore, when the processing liquid held in the front end flow path is supplied to the next substrate, the contaminated processing liquid can be prevented from being ejected toward the substrate. Thus, the cleanliness of each substrate can be improved when a plurality of substrates are processed.
The substrate processing method further includes a dead time determination step of determining whether or not a dead time indicating a time for which the same processing liquid is held in the front-end flow path exceeds a predetermined time after the discharge step, and a processing liquid replacement step of, when it is determined in the dead time determination step that the dead time exceeds the predetermined time, opening the discharge valve while the processing liquid is held in the front-end flow path, thereby allowing the processing liquid to pass through the discharge valve, and completely replacing the processing liquid held in the front-end flow path with the processing liquid other than the processing liquid that first passed through the discharge valve among the processing liquids that passed through the discharge valve.
The treatment liquid (old treatment liquid) held in the front-end flow path may be discharged to the outside of the front-end flow path through the discharge port, or may be discharged to a branch flow path described later. Alternatively, a part of the old processing liquid may be discharged outside the front-end flow path through the discharge port, and the remaining part of the old processing liquid may be discharged to the branch flow path.
According to this method, when the same treatment liquid is held in the front-end flow path for a long period of time, the discharge valve is opened, and a new treatment liquid is supplied into the front-end flow path. Thereby, the old processing liquid is pushed downstream by the new processing liquid, and is discharged from the front-end flow path. Then, the processing liquid other than the processing liquid that first passes through the discharge valve, that is, the clean processing liquid, is held in the front-end flow path.
There are cases where the properties of the treatment liquid change with time. If the time of stagnation in the front-end flow path is short, only a negligible change occurs, but if the time of stagnation in the front-end flow path is long, a property change that may affect the result of the process may occur. Therefore, by replacing the old processing liquid with the new clean processing liquid, quality unevenness of the plurality of substrates can be suppressed.
The discharging step includes a discharge execution step of pushing the processing liquid held in the front-end flow path in the supply stop step downstream by the processing liquid having passed through the discharge valve by opening the discharge valve, thereby causing the discharge port to discharge all the processing liquid held in the front-end flow path in the supply stop step, and a discharge stop step of holding the processing liquid other than the processing liquid that passed through the discharge valve first in the discharge execution step in the front-end flow path by closing the discharge valve.
According to this method, in order to discharge the processing liquid held in the front-end flow path, the supply of the processing liquid to the substrate is stopped, and then the discharge valve is opened to supply a new processing liquid to the front-end flow path. When the supply of the processing liquid to the substrate is stopped, all the processing liquid held in the front end flow path is pushed downstream by the new processing liquid and ejected from the ejection port. This can discharge the contaminated processing liquid held in the front-end flow path when the supply of the processing liquid to the substrate is stopped, from the front-end flow path.
When the discharge valve is opened, the contaminated treatment liquid flowing into the front flow path is also discharged from the discharge port. Then, the discharge valve is closed, and the clean processing liquid is held in the front-end flow path. Therefore, clean processing liquid can be supplied to the next substrate. Further, since the processing liquid is held in each portion of the front-end flow path, the amount of the processing liquid that can be supplied to the next substrate can be increased as compared with the case where the processing liquid is held in only a portion of the front-end flow path.
The discharge execution step includes a flow rate changing step of changing a flow rate of the processing liquid passing through the discharge valve by changing an opening degree of the discharge valve in a state where the discharge valve is opened.
According to this method, in order to discharge the processing liquid held in the front-end flow path, the discharge valve is opened, and a new processing liquid is supplied to the front-end flow path. The opening degree of the discharge valve is changed in a state where the discharge valve is opened. With this, the flow rate of the processing liquid passing through the discharge valve changes, and the liquid pressure of the fine particles adhering to the discharge valve changes. Thus, the particles can be effectively peeled from the discharge valve, and the cleanliness of the treatment liquid passing through the discharge valve can be improved.
The substrate processing apparatus further includes a branch flow path connected to the front flow path at a branching position downstream of the discharge valve and upstream of the discharge port, and a suction valve that opens and closes between an open state in which a suction force for sucking the processing liquid in the front flow path to the branch flow path through the branching position is applied to the front flow path and a closed state in which the suction force is transmitted to the front flow path.
The discharging step includes a suction executing step of sucking the processing liquid held in the front-end flow path from the branching position to the branching flow path through the branching position while leaving the processing liquid in a portion between the discharge valve and the branching position in the front-end flow path by opening the suction valve in a state where the discharge valve is closed, and discharging the processing liquid, which has passed through the discharge valve in the supply executing step and has passed through the discharge valve first, from the front-end flow path, and a suction stopping step of stopping the suction of the processing liquid from the front-end flow path to the branching flow path by closing the suction valve in a state where the discharge valve is closed.
According to this method, after stopping the supply of the processing liquid to the substrate in order to discharge the processing liquid held in the front-end flow path, the suction valve is opened in a state where the discharge valve is closed. Thereby, the suction force is transmitted to the front end flow path via the branch flow path, and the processing liquid is sucked from the downstream portion of the front end flow path to the branch flow path. On the other hand, since the discharge valve is closed, the treatment liquid held in the upstream portion of the front end flow path remains there (upstream portion).
The contaminated processing liquid flowing into the front-end flow path when the processing liquid is discharged toward the substrate is held at a downstream portion of the front-end flow path. Therefore, by sucking the processing liquid from the downstream portion of the front-end flow path to the branch flow path, the contaminated processing liquid can be discharged from the front-end flow path while leaving the clean processing liquid in the front-end flow path. Thereby, clean processing liquid can be supplied to the next substrate. When the treatment liquid is caused to flow back from the downstream portion of the front end flow path to the branch flow path, the range from the upstream position of the discharge port to the discharge port becomes empty, and thus, a phenomenon (so-called dripping) in which the treatment liquid unexpectedly falls from the discharge port can be prevented.
Another embodiment of the present invention provides a substrate processing apparatus including a substrate holding unit that horizontally holds a substrate, an ejection port that ejects a processing liquid that processes the substrate, an ejection valve that opens and closes between an open state in which the processing liquid passes through the ejection port and a closed state in which the processing liquid flowing toward the ejection port is blocked, a front end flow path that includes an upstream end connected to the ejection valve and a downstream end connected to the ejection port, extends from the ejection valve to the ejection port, and has a volume larger than an amount of the processing liquid ejected from the ejection port toward the substrate held by the substrate holding unit, and a control device that controls the ejection valve. With this configuration, each step described later can be performed, and the cleanliness of the dried substrate can be improved.
In the present embodiment, at least one of the following features may be added to the substrate processing apparatus.
The control device performs a process of flowing a process liquid into the front-end flow path by opening the discharge valve to cause the process liquid having passed through the discharge valve to flow into the front-end flow path, a process liquid holding step of holding the process liquid other than the process liquid having passed through the discharge valve first in the process liquid flowing step in the front-end flow path by closing the discharge valve, a supply execution step of causing the process liquid to pass through the discharge valve by opening the discharge valve and pushing the process liquid having passed through the discharge valve downstream by the process liquid having passed through the discharge valve, thereby causing the discharge port to discharge only the process liquid held in the front-end flow path in the process liquid holding step toward the substrate held horizontally by the substrate holding unit, and a supply stop step of holding all the process liquid passing through the front-end flow path in the process liquid holding step by closing the discharge valve. According to this configuration, the same effects as those described with respect to the substrate processing method can be obtained.
The substrate processing apparatus further includes a drying unit configured to dry the substrate held by the substrate holding unit, and the control device further executes a drying step of controlling the drying unit to dry the substrate to which the processing liquid ejected from the ejection port in the supply execution step is attached. According to this configuration, the same effects as those described with respect to the substrate processing method can be obtained.
The control device further executes a discharge step of discharging the processing liquid, which is held in the supply stop step and first passes through the discharge valve in the supply execution step, from the front end flow path, and holding the processing liquid, which is held in the supply execution step and first passes through the discharge valve, in the front end flow path, other than the processing liquid. According to this configuration, the same effects as those described with respect to the substrate processing method can be obtained.
The control device further includes a dead time determination step of determining whether or not a dead time indicating a time for which the same processing liquid has been held in the front-end flow path exceeds a predetermined time after the discharge step, and a processing liquid replacement step of, when it is determined in the dead time determination step that the dead time exceeds the predetermined time, opening the discharge valve while the processing liquid is held in the front-end flow path, thereby allowing the processing liquid to pass through the discharge valve, and completely replacing the processing liquid held in the front-end flow path with the processing liquid other than the processing liquid that has passed through the discharge valve first among the processing liquids that have passed through the discharge valve. According to this configuration, the same effects as those described with respect to the substrate processing method can be obtained.
The discharging step includes a discharge execution step of pushing the processing liquid held in the front-end flow path in the supply stop step downstream by the processing liquid having passed through the discharge valve by opening the discharge valve, thereby causing the discharge port to discharge all the processing liquid held in the front-end flow path in the supply stop step, and a discharge stop step of holding the processing liquid other than the processing liquid that passed through the discharge valve first in the discharge execution step in the front-end flow path by closing the discharge valve. According to this configuration, the same effects as those described with respect to the substrate processing method can be obtained.
The discharge valve includes a valve body having an internal flow path through which the treatment liquid flows and an annular valve seat surrounding the internal flow path, a valve body movable relative to the valve seat, and an electric actuator for stopping the valve body at an arbitrary position, wherein the discharge execution step includes a flow rate changing step for changing the flow rate of the treatment liquid passing through the discharge valve by changing the opening degree of the discharge valve in a state in which the discharge valve is opened. According to this configuration, the same effects as those described with respect to the substrate processing method can be obtained.
The substrate processing apparatus further includes a branch flow path connected to the front flow path at a branching position downstream of the discharge valve and upstream of the discharge port, and a suction valve that opens and closes between an open state in which a suction force for sucking the processing liquid in the front flow path to the branch flow path through the branching position is applied to the front flow path and a closed state in which the suction force is transmitted to the front flow path.
The control device also controls the suction valve. The discharging step includes a suction executing step of sucking the processing liquid held in the front-end flow path from the branching position to the branching flow path through the branching position while leaving the processing liquid in a portion between the discharge valve and the branching position in the front-end flow path by opening the suction valve in a state where the discharge valve is closed, and discharging the processing liquid, which has passed through the discharge valve in the supply executing step and has passed through the discharge valve first, from the front-end flow path, and a suction stopping step of stopping the suction of the processing liquid from the front-end flow path to the branching flow path by closing the suction valve in a state where the discharge valve is closed. According to this configuration, the same effects as those described with respect to the substrate processing method can be obtained.
The volume of the portion between the discharge valve and the branching position in the front-end flow path is larger than the volume of the portion from the branching position to the discharge port in the front-end flow path.
According to this structure, the volume of the portion between the discharge valve and the branching position in the front-end flow path, that is, the upstream portion of the front-end flow path, is larger than the volume of the portion from the branching position to the discharge port in the front-end flow path, that is, the volume of the downstream portion of the front-end flow path. Therefore, more processing liquid can be held in the upstream portion of the front-end flow path. As described above, after the processing liquid is supplied to the substrate, the processing liquid is sucked from the downstream portion of the front end flow path to the branch flow path. Then, the processing liquid remaining in the upstream portion of the front-end flow path is supplied to the next substrate. Since the volume of the upstream portion of the front flow path is larger than the volume of the downstream portion of the front flow path, the amount of the processing liquid that can be supplied to the next substrate can be increased.
The above and other objects, features and effects of the present invention will be apparent from the following description of embodiments with reference to the accompanying drawings.
Drawings
Fig. 1 is a schematic view of the inside of a processing unit included in a substrate processing apparatus according to an embodiment of the present invention, as viewed from the horizontal.
Fig. 2 is a schematic view of the spin chuck and the processing cup from above.
Fig. 3 is a schematic cross-sectional view showing a vertical cross-section of the solvent valve.
Fig. 4 is a schematic diagram for explaining a flow path of IPA to the solvent nozzle and a flow path of IPA to the suction device.
Fig. 5 is a process diagram for explaining an example of processing of a substrate by the substrate processing apparatus.
Fig. 6 is a flowchart for explaining an example (processing example 1) of a flow from before the IPA is supplied to the substrate to after the IPA is supplied to the substrate in the processing example of the substrate shown in fig. 5.
Fig. 7A is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7B is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7C is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7D is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7E is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7F is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7G is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7H is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 7I is a schematic cross-sectional view showing a state in the flow path when the processing example 1 shown in fig. 6 is performed.
Fig. 8 is a flowchart for explaining an example (processing example 2) of a flow from before the IPA is supplied to the substrate to after the IPA is supplied to the substrate in the processing example of the substrate shown in fig. 5.
Fig. 9A is a schematic cross-sectional view showing a state in the flow path when the processing example 2 shown in fig. 8 is performed.
Fig. 9B is a schematic cross-sectional view showing a state in the flow path when the processing example 2 shown in fig. 8 is performed.
Detailed Description
Fig. 1 is a schematic view of the inside of a processing unit 2 included in a substrate processing apparatus 1 according to an embodiment of the present invention, as viewed from the horizontal. Fig. 2 is a schematic view of the spin chuck 8 and the processing cup 21 from above.
As shown in fig. 1, the substrate processing apparatus 1 is a single-wafer type apparatus for processing a disk-shaped substrate W such as a semiconductor wafer. The substrate processing apparatus 1 includes a load port (not shown) for placing a box-shaped carrier accommodating a substrate W, a processing unit 2 for processing the substrate W transferred from the load port by a processing fluid such as a processing liquid or a processing gas, a transfer robot (not shown) for transferring the substrate W between the load port and the processing unit 2, and a control device 3 for controlling the substrate processing apparatus 1.
The processing unit 2 includes a chamber 4 having an internal space, a spin chuck 8 for horizontally holding a substrate W in the chamber 4 and rotating the substrate W around a vertical rotation axis A1 passing through a center portion of the substrate W, and a tubular processing cup 21 for receiving processing liquid discharged from the substrate W and the spin chuck 8.
The chamber 4 includes a box-shaped partition wall 5 provided with a carry-in/carry-out port 5b through which the substrate W passes, and a shutter 6 for opening and closing the carry-in/carry-out port 5 b. The air filtered through the filter, that is, clean air, is supplied into the chamber 4 from the air supply port 5a provided in the upper portion of the partition wall 5 at a constant time. The gas in the chamber 4 is exhausted from the chamber 4 through an exhaust pipe 7 connected to the bottom of the processing cup 21. Thereby, a downward flow of clean air is always formed in the chamber 4.
The spin chuck 8 includes a disk-shaped spin base 10 held in a horizontal posture, a plurality of chuck pins 9 holding a substrate W in a horizontal posture above the spin base 10, a rotation shaft 11 extending downward from a central portion of the spin base 10, and a rotation motor 12 rotating the spin base 10 and the plurality of chuck pins 9 by rotating the rotation shaft 11. The spin chuck 8 is not limited to a chuck having a chuck pin 9 in contact with the outer peripheral surface of the substrate W, and may be a vacuum chuck that holds the substrate W horizontally by sucking the back surface (lower surface) of the substrate W, which is a non-element forming surface, onto the upper surface of the spin base 10.
The processing cup 21 includes a plurality of baffles 23 for receiving the liquid discharged outward from the substrate W, a plurality of cups 26 for receiving the liquid guided downward by the plurality of baffles 23, and a cylindrical outer wall member 22 surrounding the plurality of baffles 23 and the plurality of cups 26. Fig. 1 shows an example in which four baffles 23 and three cups 26 are provided.
The baffle plate 23 includes a cylindrical portion 25 surrounding the spin chuck 8, and an annular ceiling wall portion 24 extending obliquely upward from an upper end portion of the cylindrical portion 25 toward the rotation axis A1. The plurality of top wall portions 24 are vertically overlapped, and the plurality of cylindrical portions 25 are concentrically arranged. The plurality of cups 26 are disposed below the plurality of cylindrical portions 25, respectively. Cup 26 is formed with an upwardly open annular sump.
The processing unit 2 includes a barrier lifting unit 27 that lifts and lowers the plurality of barriers 23 individually. The shutter lifting means 27 vertically lifts and lowers the shutter 23 between the upper position and the lower position. The upper position is a position where the upper end 23a of the shutter 23 is disposed above the holding position where the substrate W held by the spin chuck 8 is disposed. The lower position is a position where the upper end 23a of the shutter 23 is disposed below the holding position. The annular upper end of the top wall portion 24 corresponds to the upper end 23a of the baffle plate 23. As shown in fig. 2, the upper end 23a of the baffle plate 23 surrounds the substrate W and the spin base 10 in a plan view.
When the spin chuck 8 rotates the substrate W, the processing liquid supplied to the substrate W is thrown away around the substrate W. When the processing liquid is supplied to the substrate W, the upper end 23a of the at least one baffle plate 23 is disposed above the substrate W. Therefore, the treatment liquid such as the chemical liquid or the rinse liquid discharged to the periphery of the substrate W is received by one of the baffles 23, and is guided to the cup 26 corresponding to the baffle 23.
As shown in fig. 1, the processing unit 2 includes a chemical nozzle 31 that ejects chemical downward toward the upper surface of the substrate W. The chemical liquid nozzle 31 is connected to a chemical liquid pipe 32 that guides the chemical liquid to the chemical liquid nozzle 31. When the chemical liquid valve 33 provided in the chemical liquid pipe 32 is opened, the chemical liquid is continuously discharged downward from the discharge port of the chemical liquid nozzle 31. The chemical liquid discharged from the chemical liquid nozzle 31 may be a liquid containing at least one of sulfuric acid, nitric acid, hydrochloric acid, hydrofluoric acid, phosphoric acid, acetic acid, ammonia water, water peroxide, an organic acid (e.g., citric acid, oxalic acid, etc.), an organic base (e.g., TMAH: tetramethylammonium hydroxide (tetramethylammonium hydroxide), etc.), a surfactant, and an anticorrosive, or may be other liquid.
The chemical liquid valve 33 includes a valve body having an internal flow path through which the chemical liquid flows and an annular valve seat surrounding the internal flow path, a valve body movable with respect to the valve seat, and an actuator for moving the valve body between a closed position in which the valve body contacts the valve seat and an open position in which the valve body is away from the valve seat. The same is true for other valves. The actuator may be a pneumatic actuator or an electric actuator, or may be other actuators. The control device 3 controls the actuator to open and close the chemical liquid valve 33. When the actuator is an electric actuator, the control device 3 controls the electric actuator to position the valve element at any position from the closed position to the open position (fully open position).
As shown in fig. 2, the processing unit 2 includes a nozzle arm 34 that holds the chemical liquid nozzle 31, and a nozzle moving unit 35 that moves the chemical liquid nozzle 31 in at least one of the vertical direction and the horizontal direction by moving the nozzle arm 34. The nozzle moving unit 35 horizontally moves the chemical nozzle 31 between a processing position where the processing liquid discharged from the chemical nozzle 31 adheres to the upper surface of the substrate W and a standby position (position shown in fig. 2) where the chemical nozzle 31 is located around the processing cup 21 in a plan view. The nozzle moving means 35 is, for example, a rotating means that moves the chemical nozzle 31 horizontally around the processing cup 21 around a nozzle rotation axis A2 extending vertically, thereby moving the chemical nozzle 31 along an arc-shaped path passing through the substrate W in a plan view.
As shown in fig. 1, the processing unit 2 includes a rinse solution nozzle 36 that discharges a rinse solution downward toward the upper surface of the substrate W. The shower nozzle 36 is fixed relative to the bottom of the chamber 4. The rinse solution discharged from the rinse solution nozzle 36 is attached to the center portion of the upper surface of the substrate W. The rinse liquid nozzle 36 is connected to a rinse liquid pipe 37 that guides the rinse liquid to the rinse liquid nozzle 36. When the eluent valve 38 interposed in the eluent pipe 37 is opened, the eluent is continuously discharged downward from the discharge port of the eluent nozzle 36. The eluting solution discharged from the eluting solution nozzle 36 is, for example, pure water (deionized water: DIW (Deionized Water)). The eluent may be any of carbonated water, electrolytic ionized water, hydrogen water, ozone water, and hydrochloric acid water having a diluted concentration (for example, about 10 to 100 ppm).
The processing unit 2 includes a solvent nozzle 41 that ejects a solvent downward toward the upper surface of the substrate W. The solvent nozzle 41 is connected to a solvent pipe 42 for guiding the solvent to the solvent nozzle 41. When the solvent valve 43 interposed in the solvent pipe 42 is opened, the solvent is continuously discharged downward from the discharge port 41p of the solvent nozzle 41. The solvent ejected from the solvent nozzle 41 is, for example, IPA (isopropyl alcohol). Unless otherwise indicated, solvent and IPA represent liquids. IPA has a boiling point lower than that of water and a surface tension lower than that of water. The solvent discharged from the solvent nozzle 41 may be a fluorine-based organic solvent such as HFE (hydrofluoroether).
The substrate processing apparatus 1 includes a suction pipe 44 connected to the solvent pipe 42 at a position downstream of the solvent valve 43, a suction valve 45 interposed between the suction pipe 44, and a suction device 46 that generates a suction force for sucking the solvent passing through the solvent valve 43 via the suction pipe 44. The upstream end of the suction pipe 44 is connected to the solvent pipe 42, and the downstream end of the suction pipe 44 is connected to the suction device 46. The suction valve 45 is arranged upstream of the suction device 46.
The suction device 46 includes, for example, an ejector (ejector) that generates a suction force, and a gas valve that switches supply and stop of gas to the ejector. The suction device 46 may be a suction pump. The suction device 46 may be driven only when necessary, or may be driven at ordinary times. When the suction valve 45 is opened and the suction device 46 is driven, the suction force of the suction device 46 is transmitted to the inside of the solvent pipe 42 via the suction pipe 44.
As shown in fig. 2, the processing unit 2 includes a nozzle arm 47 that holds the solvent nozzle 41, and a nozzle moving unit 48 that moves the solvent nozzle 41 in at least one of the vertical direction and the horizontal direction by moving the nozzle arm 47. The nozzle moving unit 48 horizontally moves the solvent nozzle 41 between a processing position where the solvent ejected from the solvent nozzle 41 adheres to the upper surface of the substrate W and a standby position (position shown in fig. 2) where the solvent nozzle 41 is located around the processing cup 21 in a plan view. The nozzle moving means 48 is, for example, a rotating means, and moves the solvent nozzle 41 horizontally around the processing cup 21 around a nozzle rotation axis A3 extending vertically, thereby moving the solvent nozzle 41 along an arc-shaped path passing through the substrate W in a plan view.
The processing unit 2 includes a tubular standby tank 49 that receives the solvent ejected from the solvent nozzle 41 located at the standby position. The standby tank 49 is disposed below the standby position of the solvent nozzle 41. The standby tank 49 is disposed around the processing cup 21 in a plan view. The standby tank 49 includes a cylindrical peripheral wall extending in the up-down direction. The upper end of the peripheral wall of the standby tank 49 forms an opening that opens upward. The solvent discharged from the solvent nozzle 41 located at the standby position is received by the standby tank 49 and is guided to the recovery device or the liquid discharge device.
Next, the structure of the solvent valve 43 will be specifically described.
Fig. 3 is a schematic cross-sectional view showing a vertical cross-section of the solvent valve 43.
The solvent valve 43 is, for example, a diaphragm valve. The solvent valve 43 may be a valve other than a diaphragm valve such as a needle valve. The solvent valve 43 includes a valve body 51 provided with an internal flow path 52 through which a liquid flows and an annular valve seat 53 surrounding the internal flow path 52, and a valve body 54 movable relative to the valve seat 53. The valve element 54 is a diaphragm made of an elastic material such as rubber or resin. The valve seat 53 is made of resin. The solvent pipe 42 includes an upstream pipe 42u for guiding the solvent to the internal flow path 52 and a downstream pipe 42d for guiding the solvent discharged from the internal flow path 52.
The solvent valve 43 includes a valve actuator 55 that operates the valve body 54 between an open position, in which the valve body 54 is away from the valve seat 53, and a closed position, in which the valve body 54 is in contact with the valve seat 53 to block the internal flow path 52. The valve actuator 55 is, for example, an electric actuator. Therefore, the solvent valve 43 is an electric valve. The valve actuator 55 includes a rod 58 that moves integrally with the valve spool 54, an electric motor 56 that generates power to move the rod 58 in the axial direction, and a motion conversion mechanism 57 that converts rotation of the electric motor 56 into linear motion of the rod 58.
The rod 58 of the valve actuator 55 is movable in the axial direction of the rod 58 between an open position (position shown in fig. 3) in which the spool 54 is away from the valve seat 53 and a closed position in which the spool 54 is pressed against the valve seat 53. When the electric motor 56 of the valve actuator 55 rotates, the lever 58 is moved in the axial direction of the lever 58 by an amount of movement corresponding to the rotation angle of the electric motor 56. The control device 3 controls the rotation angle of the electric motor 56 to position the valve body 54 at any position from the open position to the closed position.
When the lever 58 moves to the closed position side in a state where the valve element 54 is separated from the valve seat 53, a part of the valve element 54 approaches the valve seat 53. When the lever 58 reaches the closed position, the valve element 54 contacts the valve seat 53, and the internal flow path 52 is closed. Thereby, the solvent is blocked by the valve element 54. On the other hand, when the lever 58 moves to the open position side in a state where the valve body 54 is pressed against the valve seat 53, the valve body 54 is separated from the valve seat 53, and the internal flow path 52 is opened. Thereby, the solvent passes through the valve seat 53 and is discharged from the internal flow path 52.
Next, the flow path of IPA will be described.
Fig. 4 is a schematic diagram for explaining a flow path of IPA to the solvent nozzle 41 and a flow path of IPA to the suction device 46.
The substrate processing apparatus 1 includes a supply channel 61 extending upstream from the solvent valve 43, and a tip channel 62 extending from the solvent valve 43 to the discharge port 41p of the solvent nozzle 41. The substrate processing apparatus 1 further includes a branch flow path 63 extending from the front end flow path 62 to the suction valve 45, and a suction flow path 64 extending from the suction valve 45 to the suction device 46.
The tip flow path 62 extends from the solvent valve 43 to the discharge port 41p of the solvent nozzle 41. That is, the flow path in the solvent nozzle 41 is also included in the tip flow path 62. The tip flow path 62 is formed by the solvent pipe 42 and the solvent nozzle 41. An upstream end 62u of the front flow path 62 is connected to the solvent valve 43, and a downstream end 62d of the front flow path 62 is connected to the discharge port 41p of the solvent nozzle 41.
The branch flow path 63 is formed by a part of the suction pipe 44. The branch flow path 63 is connected to the front end flow path 62 at a branch position P1 downstream of the solvent valve 43 and upstream of the discharge port 41P of the solvent nozzle 41. An upstream end 63u of the branch flow path 63 is connected to the tip flow path 62, and a downstream end 63d of the branch flow path 63 is connected to the suction valve 45. The downstream end 63d of the branch flow path 63 may be disposed at a height equal to the height of the discharge port 41p of the solvent nozzle 41, or may be disposed at a position higher or lower than the discharge port 41p of the solvent nozzle 41.
In fig. 4, an upstream portion 62a of the front-end flow path 62 is hatched, and a downstream portion 62b of the front-end flow path 62 is cross-hatched. The upstream portion 62a of the front-end flow path 62 is a portion between the solvent valve 43 and the branching position P1 in the front-end flow path 62, and the downstream portion 62b of the front-end flow path 62 is a portion (including the branching position P1) from the branching position P1 to the discharge port 41P of the solvent nozzle 41 in the front-end flow path 62. The volume of the upstream portion 62a may be equal to the volume of the downstream portion 62b, or may be larger or smaller than the volume of the downstream portion 62 b.
Next, an example of the processing of the substrate W by the substrate processing apparatus 1 will be described.
Fig. 5 is a process diagram for explaining an example of processing of the substrate W by the substrate processing apparatus 1.
Reference is made to fig. 1 and 2. And with appropriate reference to fig. 5. The following operations are performed by the control device 3 controlling the substrate processing apparatus 1. In other words, the control device 3 is programmed to perform the following actions. The control device 3 is a computer that executes a program. As shown in fig. 1, the control device 3 includes a memory 3m storing information such as a program, a processor 3p controlling the substrate processing device 1 based on the information stored in the memory 3m, and a timer 3t measuring time.
When the substrate processing apparatus 1 processes the substrate W, a loading process of loading the substrate W into the chamber 4 is performed (step S1 in fig. 5).
Specifically, all scanning nozzles including the chemical nozzle 31 and the solvent nozzle 41 are positioned at the standby position, and all the shutters 23 are positioned at the lower position. In this state, the transfer robot supports the substrate W with the robot arm and brings the robot arm into the chamber 4. Then, the transfer robot places the substrate W on the robot hand on the spin chuck 8 in a state where the surface of the substrate W is directed upward. The transfer robot withdraws the robot arm from the chamber 4 after placing the substrate W on the spin chuck 8.
Next, a chemical supply process for supplying a chemical to the substrate W is performed (step S2 in fig. 5).
Specifically, the barrier lifting unit 27 lifts at least one of the plurality of barriers 23 so that the inner surface of one of the barriers 23 horizontally faces the outer peripheral surface of the substrate W. The nozzle moving unit 35 moves the nozzle arm 34 to position the discharge port of the chemical solution nozzle 31 above the substrate W. The rotation motor 12 starts rotation of the substrate W in a state where the substrate W is held by the chuck pins 9. In this state, the chemical liquid valve 33 is opened, and the chemical liquid nozzle 31 starts to discharge the chemical liquid.
The chemical liquid discharged from the chemical liquid nozzle 31 is attached to the central portion of the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W. Thereby, a liquid film of the chemical solution is formed on the substrate W so as to cover the entire upper surface of the substrate W. When a predetermined time has elapsed since the chemical solution valve 33 was opened, the chemical solution valve 33 is closed, and the chemical solution is stopped from being discharged from the chemical solution nozzle 31. Then, the nozzle moving unit 35 withdraws the chemical nozzle 31 from above the substrate W.
Next, an rinse solution supplying step of supplying pure water, which is an example of the rinse solution, to the substrate W is performed (step S3 in fig. 5).
Specifically, the rinse liquid valve 38 is opened, and the rinse liquid nozzle 36 starts the discharge of pure water. The barrier lifting unit 27 may move at least one of the plurality of barriers 23 up and down before or after the start of the ejection of the pure water, thereby switching the barrier 23 opposite to the outer circumferential surface of the substrate W. The pure water discharged from the rinse liquid nozzle 36 is attached to the central portion of the upper surface of the substrate W, and then flows outward along the upper surface of the rotated substrate W. Thereby, the chemical solution on the substrate W is replaced with pure water, and a liquid film of pure water is formed to cover the entire upper surface of the substrate W. Then, the rinse liquid valve 38 is closed, and the discharge of pure water from the rinse liquid nozzle 36 is stopped.
Next, an IPA supplying step of supplying IPA, which is an example of a solvent having a lower surface tension than water, to the substrate W is performed (step S4 in fig. 5).
Specifically, the nozzle moving unit 48 moves the nozzle arm 47 to position the discharge port 41p of the solvent nozzle 41 above the substrate W. Then, the solvent valve 43 is opened, and the solvent nozzle 41 starts the ejection of IPA. The barrier lifting unit 27 may move at least one of the plurality of barriers 23 up and down before or after the start of the ejection of the IPA, thereby switching the barrier 23 opposite to the outer circumferential surface of the substrate W.
The IPA ejected from the solvent nozzle 41 is attached to the central portion of the upper surface of the substrate W, and then flows outward along the upper surface of the substrate W. Thereby, the pure water on the substrate W is replaced with IPA, and a liquid film of IPA is formed to cover the entire upper surface of the substrate W. When a predetermined time has elapsed since the opening of the solvent valve 43, the solvent valve 43 is closed, and the discharge of IPA from the solvent nozzle 41 is stopped. Then, the nozzle moving unit 48 withdraws the solvent nozzle 41 from above the substrate W.
Next, a drying step of drying the substrate W by rotating the substrate W at a high speed is performed (step S5 in fig. 5).
Specifically, after stopping the discharge of the IPA from the solvent nozzle 41, the spin motor 12 accelerates the substrate W in the rotation direction, and rotates the substrate W at a high rotation speed (for example, several thousand rpm) that is higher than the rotation speed of the previous substrate W. The IPA attached to the substrate W is scattered around the substrate W by the high-speed rotation of the substrate W. Thereby, IPA is removed from the substrate W, and the substrate W is dried. After a predetermined time has elapsed from the start of the high-speed rotation of the substrate W, the rotation motor 12 stops rotating. Thereby, the rotation of the substrate W is stopped.
Next, a carry-out process of carrying out the substrate W from the chamber 4 is performed (step S6 in fig. 5).
Specifically, the barrier lifting unit 27 lowers all the barriers 23 to the lower position. The transfer robot releases the grip of the substrate W by the plurality of chuck pins 9 and then supports the substrate W on the spin chuck 8 with a robot arm. Then, the transfer robot withdraws the robot from the chamber 4 while supporting the substrate W with the robot. Thereby, the processed substrate W is carried out of the chamber 4.
Treatment example 1
Next, an example of a flow from before the supply of IPA to the substrate W to after the supply of IPA to the substrate W (processing example 1) will be described.
Fig. 6 is a flowchart for explaining the processing example 1. Fig. 7A to 7I are schematic cross-sectional views showing the state in the flow path when the processing example 1 shown in fig. 6 is performed.
In fig. 7A to 7I, an open valve is shown in black, and a closed valve is shown in white. The area in which the liquid pattern is depicted in fig. 7A represents the area where clean IPA is present, and the cross-hatched area in fig. 7A represents the area where contaminated IPA is present. The same applies to the other figures.
Reference is made to fig. 1 and 2. And refer to fig. 6 and 7A-7I as appropriate. The following operations are performed by the control device 3 controlling the substrate processing apparatus 1.
When the solvent valve 43 is opened, the valve body 54 rubs against the valve seat 53 (see fig. 3), and particles are generated in the solvent valve 43. Also when the solvent valve 43 is closed, the valve body 54 rubs against the valve seat 53, and particles are generated in the solvent valve 43. The particles generated when the solvent valve 43 is closed stay inside the solvent valve 43. When the solvent valve 43 is opened, the particles are discharged from the solvent valve 43 together with the IPA passing through the solvent valve 43. The particles generated when the solvent valve 43 is opened are also discharged from the solvent valve 43 together with the IPA passing through the solvent valve 43.
As shown in fig. 7A, immediately after the solvent valve 43 is opened, the particles in the solvent valve 43 are discharged from the solvent valve 43 together with IPA. Accordingly, contaminated IPA, i.e., IPA having a large number of particles per unit volume, flows from the solvent valve 43 to the front end flow path 62. Thereafter, clean IPA, i.e., IPA having a small number of particles per unit volume, flows from the solvent valve 43 to the front end flow path 62. Accordingly, when the solvent valve 43 is opened, contaminated IPA flows into the front-end flow path 62, and then clean IPA flows into the front-end flow path 62. Contaminated IPA is pushed downstream by subsequent IPAs (clean IPAs).
When the IPA is supplied to the substrate W, a first preparation step of holding clean IPA in the front end flow path 62 is performed (step S11 in fig. 6).
Specifically, as shown in fig. 7A, in a state where the solvent nozzle 41 is located at the standby position and the suction valve 45 is closed, the solvent valve 43 is opened. Thereby, the IPA in the supply flow path 61 flows into the front end flow path 62 through the solvent valve 43. During the period when the solvent valve 43 is opened, IPA continues to flow from the supply flow path 61 to the front end flow path 62 via the solvent valve 43.
As shown in fig. 7A, when the solvent valve 43 is opened, contaminated IPA having a large number of particles per unit volume flows from the solvent valve 43 into the front end flow path 62. Then, clean IPA having a small number of particles per unit volume flows from the solvent valve 43 into the front end flow path 62. Contaminated IPA is pushed downstream by clean IPA. Therefore, the region filled with IPA in the front-end flow path 62 spreads toward the ejection port 41p of the solvent nozzle 41. At this time, since the suction valve 45 is closed, the IPA in the front end flow path 62 does not flow into the branch flow path 63, or only a very small amount of IPA flows into the branch flow path 63.
As shown in fig. 7B, when the IPA flowing in the front flow path 62 reaches the downstream end 62d of the front flow path 62, the IPA in the front flow path 62 is ejected from the ejection port 41p of the solvent nozzle 41 and received by the standby tank 49. Thereby, contaminated IPA flowing into the front-end flow path 62 when the solvent valve 43 is opened is discharged from the front-end flow path 62.
As shown in fig. 7C, when all of the contaminated IPA is ejected from the ejection port 41p of the solvent nozzle 41, the solvent valve 43 is closed. Thus, only clean IPA is held in the front flow path 62 and is stationary in the front flow path 62. Whether or not all of the contaminated IPA is discharged from the discharge ports 41p of the solvent nozzle 41 may be determined by the control device 3 based on the time when the solvent valve 43 is opened, or may be determined by the control device 3 based on the detection value of a flow meter that detects the flow rate of the IPA passing through the solvent valve 43.
After the clean IPA is held in the front end flow path 62, an IPA supply step of supplying the cleaned IPA to the substrate W is performed (step S12 in fig. 6). The IPA supply step shown in fig. 6 (step S12 in fig. 6) corresponds to the IPA supply step shown in fig. 5 (step S4 in fig. 5).
Specifically, in the previous step (the initial preparation step here), the nozzle moving means 48 moves the solvent nozzle 41 to the processing position in a state where the clean IPA flowing into the front end flow path 62 is held in the front end flow path 62. As shown in fig. 7D, the solvent valve 43 is then opened. Thus, contaminated IPA flows from the solvent valve 43 into the front end flow path 62, and then clean IPA flows from the solvent valve 43 into the front end flow path 62. The clean IPA previously held in the front end flow path 62 is pushed downstream by the newly flowed IPA. Thus, a part of the clean IPA held in advance in the front end flow path 62 is ejected from the ejection port 41p of the solvent nozzle 41 toward the substrate W.
In the IPA supply step, the amount of IPA discharged from the discharge ports 41p of the solvent nozzle 41, that is, the amount of IPA supplied to one wafer W is smaller than the amount of clean IPA held in advance in the front end flow path 62. Accordingly, as shown in fig. 7E, the solvent valve 43 is closed in a state where a part of the clean IPA held in the front-end flow path 62 is ejected from the ejection port 41p of the solvent nozzle 41 and the remaining part remains in the front-end flow path 62. Whether or not such a state is established may be determined by the control device 3 based on the time when the solvent valve 43 is opened, or may be determined by the control device 3 based on the detection value of a flow meter that detects the flow rate of IPA passing through the solvent valve 43.
As shown in fig. 7E, when the solvent valve 43 is closed, the IPA flowing into the front-end flow path 62 in the previous step and not ejected from the ejection port 41p of the solvent nozzle 41 in the IPA supplying step is held in the front-end flow path 62. In the IPA supply step, all of the IPA flowing into the front-end flow path 62 is held in the front-end flow path 62. In the IPA supply step, contaminated IPA is contained in the IPA flowing into the front end flow path 62. Therefore, only clean IPA is discharged from the discharge port 41p of the solvent nozzle 41, and contaminated IPA is held in the front end flow path 62 without being discharged from the discharge port 41p of the solvent nozzle 41. After the solvent valve 43 is closed, the nozzle moving unit 48 moves the solvent nozzle 41 to the standby position in a state where the IPA is held in each portion of the front end flow path 62.
After the IPA supply step (step S12 in fig. 6) is stopped, if the IPA is supplied to the next substrate W in the same processing unit 2 after the IPA is discharged from the discharge port 41p of the solvent nozzle 41 (yes in step S13 in fig. 6), a discharge step (step S14 in fig. 6) is performed in which contaminated IPA is discharged from the front end flow path 62 and clean IPA is held in the front end flow path 62.
Specifically, after the solvent valve 43 is closed, the solvent valve 43 is opened in a state where the IPA is held in each portion of the front-end flow path 62. Thus, as shown in fig. 7F, contaminated IPA flows from the solvent valve 43 into the front end flow path 62, and then clean IPA flows from the solvent valve 43 into the front end flow path 62. The IPA held in advance in the front flow path 62, that is, the IPA that has flowed into the front flow path 62 in the previous step (the initial preparation step in this case) and has not been discharged from the discharge port 41p of the solvent nozzle 41 in the IPA supply step and remains in the front flow path 62, and the total IPA that has flowed into the front flow path 62 in the IPA supply step are pushed toward the discharge port 41p side of the solvent nozzle 41 by the fresh IPA.
All of the IPA held in advance in the front end flow path 62 is ejected from the ejection port 41p of the solvent nozzle 41 toward the standby tank 49. In the discharge step, contaminated IPA flowing into the front end flow path 62 is also discharged from the discharge port 41p of the solvent nozzle 41 toward the standby tank 49. Therefore, the front-end flow path 62 is filled with only clean IPA. Then, the solvent valve 43 is closed in this state. Thus, as shown in fig. 7G, only clean IPA is held in the front flow path 62 and is stationary in the front flow path 62.
After the contaminated IPA is discharged from the front end flow path 62, a dead time determination step (step S15 in fig. 6) of determining whether or not a time (dead time) from the end of the discharge step to the start of the IPA supply step for the next substrate W exceeds a predetermined time is performed when the IPA is supplied to the next substrate W, that is, when the IPA supply step for the next substrate W is performed.
When the dead time does not exceed the predetermined time (no in step S15 of fig. 6), the IPA supply process for the next substrate W is performed (return to step S12 of fig. 6). When the same processing unit 2 continues to supply the IPA to the next substrate W (yes in step S13 in fig. 6), the evacuation process (step S14 in fig. 6) and the IPA supply process (step S12 in fig. 6) are performed again. That is, after the initial preparation step, one cycle from the IPA supply step to the discharge step is repeated in accordance with the number of sheets of the substrate W. Thus, clean IPA is supplied to the plurality of substrates W, and the substrates W are processed.
On the other hand, when the dead time exceeds the predetermined time, that is, when the time from the end of the evacuation process to the start of the IPA supply process for the next substrate W is long (yes in step S15 of fig. 6), the same process liquid replacement process as the initial preparation process is performed (step S16 of fig. 6). Thereby, all of the IPA held in the front end flow path 62 is replaced with the clean new IPA. Then, an IPA supply process for the next substrate W is performed (step S12 in fig. 6 is returned). This can supply IPA with stable quality to the next substrate W.
Further, when the same processing unit 2 is not continuously supplying the IPA to the next substrate W, that is, when the processing of the substrate W in the same processing unit 2 is completed (no in step S13 of fig. 6), the back suction step (step S17 of fig. 6) is performed, and the IPA held in the front end flow path 62 is sucked into the branch flow path 63, thereby emptying the discharge port 41p of the solvent nozzle 41 and the vicinity thereof.
Specifically, as shown in fig. 7H, the suction valve 45 is opened in a state where the solvent valve 43 is closed. When the suction valve 45 is opened, the suction force of the suction device 46 is transmitted to the distal end flow path 62 through the branch flow path 63 and the branch position P1. Thus, while air is sucked into the downstream portion 62b through the discharge port 41P of the solvent nozzle 41, IPA is sucked from the downstream portion 62b to the branch flow path 63 through the branch position P1. On the other hand, since the solvent valve 43 is closed, all or substantially all of the IPA held in the upstream portion 62a is not sucked into the branch flow path 63 and remains there (upstream portion 62 a).
As shown in fig. 7I, when the IPA in the downstream portion 62b is sucked into the branch flow path 63 and the downstream portion 62b becomes empty, the suction valve 45 is closed. Whether the downstream portion 62b is empty may be determined by the control device 3 based on the time when the suction valve 45 is opened, or may be determined by the control device 3 based on a detection value of a flow meter that detects the flow rate of the IPA passing through the suction valve 45. After the suction valve 45 is closed, this state is maintained until the initial preparation process for the next substrate W is started.
Treatment example 2
Next, an example of a flow from before the supply of IPA to the substrate W to after the supply of IPA to the substrate W (processing example 2) will be described.
Fig. 8 is a flowchart for explaining the processing example 2. Fig. 9A to 9B are schematic cross-sectional views showing the state in the flow path when the processing example 2 shown in fig. 8 is performed. In fig. 9A to 9B, an open valve is shown in black, and a closed valve is shown in white.
Reference is made to fig. 1 and 2. And refer to fig. 8 and 9A-9B as appropriate. The following operations are performed by the control device 3 controlling the substrate processing apparatus 1.
In the 2 nd processing example, the flow from the initial preparation step (step S21 in fig. 8) to the IPA supply step (step S22 in fig. 8) is the same as in the 1 st processing example, and therefore, the flow after the initial preparation step and the IPA supply step is performed will be described below.
When the supply of the IPA from the ejection port 41p of the solvent nozzle 41 is stopped (step S22 in fig. 8) and then the IPA is continuously supplied to the next substrate W in the same processing unit 2 (yes in step S23 in fig. 8), a discharge step (step S24 in fig. 8) of discharging contaminated IPA from the front end flow path 62 and keeping clean IPA in the front end flow path 62 is performed.
Specifically, the suction valve 45 is opened in a state where the solvent valve 43 is closed and the IPA is held in each portion of the front end flow path 62. The suction valve 45 may be opened when the solvent nozzle 41 is located at the standby position or the processing position, or may be opened when it is located between the standby position and the processing position. When the suction valve 45 is opened, the suction force of the suction device 46 is transmitted to the distal end flow path 62 through the branch flow path 63 and the branch position P1. Thus, as shown in fig. 9A, IPA is sucked from the downstream portion 62b to the branch flow path 63 through the branch position P1 while air is sucked to the downstream portion 62b through the discharge port 41P of the solvent nozzle 41. On the other hand, since the solvent valve 43 is closed, all or substantially all of the IPA held in the upstream portion 62a is not sucked into the branch flow path 63 and remains there (upstream portion 62 a).
In the IPA supply step (step S22 of fig. 8), contaminated IPA flowing into the front-end flow path 62 is held not in the upstream portion 62a of the front-end flow path 62 but in the downstream portion 62b of the front-end flow path 62 (see fig. 7E). In other words, in the IPA supply step, the amount of IPA discharged from the discharge port 41P of the solvent nozzle 41 and the branching position P1 at which the front end flow path 62 and the branching flow path 63 are connected are set so that contaminated IPA is held in the downstream portion 62b of the front end flow path 62. Therefore, as shown in fig. 9A, when the suction valve 45 is opened, contaminated IPA held in the downstream portion 62b is discharged to the branch flow path 63. On the other hand, only clean IPA is held in the upstream portion 62a.
As shown in fig. 9B, after all of the contaminated IPA held in the downstream portion 62B is discharged to the branch flow path 63, the suction valve 45 is closed. As long as the contaminated IPA is discharged to the branch flow path 63, the suction valve 45 may be closed before the downstream portion 62b is entirely emptied. Whether or not all of the contaminated IPA is discharged to the branch flow path 63 may be determined by the control device 3 based on the time when the suction valve 45 is opened, or may be determined by the control device 3 based on the detection value of a flow meter that detects the flow rate of the IPA passing through the suction valve 45.
After the contaminated IPA is discharged from the front end flow path 62, when the IPA is supplied to the next substrate W, that is, when the IPA supply process for the next substrate W is performed, a dead time determination process (step S25 in fig. 8) is performed to determine whether or not a time (dead time) from the end of the discharge process (step S24 in fig. 8) to the start of the IPA supply process for the next substrate W (step S22 in fig. 8) exceeds a predetermined time.
When the dead time does not exceed the predetermined time (no in step S25 in fig. 8), the IPA supply process for the next substrate W is performed (return to step S22 in fig. 8). When the dead time exceeds the predetermined time (yes in step S25 in fig. 8), the same treatment liquid replacement process as in the treatment example 1 is performed (step S26 in fig. 8). Then, an IPA supply process for the next substrate W is performed (step S22 in fig. 8 is returned).
Further, when the same processing unit 2 is not supplying IPA to the next substrate W, that is, when the processing of the substrate W in the same processing unit 2 is completed (no in step S23 in fig. 8), the same suck-back process as in the 1 st processing example is performed (step S27 in fig. 8). Then, this state is maintained until the initial preparation process for the next substrate W is started (step S21 in fig. 8).
As described above, in the present embodiment, the solvent valve 43 is opened before the IPA is supplied to the substrate W. Thus, the IPA contaminated by the particles generated in the solvent valve 43 flows from the solvent valve 43 into the front end flow path 62. Then, clean IPA containing few particles flows from the solvent valve 43 into the front end flow path 62. That is, contaminated IPA first passes through the solvent valve 43, and then clean IPA passes through the solvent valve 43.
Contaminated IPA is pushed downstream by clean IPA. When the IPA flowing in the front flow path 62 reaches the downstream end 62d of the front flow path 62, the IPA in the front flow path 62 is ejected from the ejection port 41p of the solvent nozzle 41. Thereby, contaminated IPA flowing into the front-end flow path 62 when the solvent valve 43 is opened is discharged from the front-end flow path 62. After contaminated IPA is ejected from the ejection port 41p of the solvent nozzle 41, the solvent valve 43 is closed. Thus, clean IPA is held in the front flow path 62 and is stationary in the front flow path 62.
Then, the solvent valve 43 is opened again. The clean IPA held in the front end flow path 62 is pushed downstream by the newly flowed IPA, and is ejected from the ejection port 41p of the solvent nozzle 41 toward the substrate W. Thereby, clean IPA is supplied to the substrate W. Then, the solvent valve 43 is closed, and the discharge of IPA from the discharge port 41p of the solvent nozzle 41 is stopped. At the same time, all of the newly introduced IPA is held in the front end flow path 62.
In this way, the solvent valve 43 is opened in a state where clean IPA is held in the front end flow path 62, and the IPA is ejected toward the substrate W. Then, all the IPA having passed through the solvent valve 43 is held in the front end flow path 62. The contaminated IPA is also contained in the IPA that has passed through the solvent valve 43. Accordingly, while avoiding the contaminated IPA from being ejected from the ejection port 41p of the solvent nozzle 41, only the clean IPA can be ejected from the ejection port 41p of the solvent nozzle 41. Accordingly, since the particles contained in the IPA supplied to the substrate W are reduced, the cleanliness of the substrate W after drying can be improved.
In the present embodiment, the substrate W to which IPA ejected from the ejection ports 41p of the solvent nozzle 41 is attached is dried. The IPA ejected from the ejection port 41p of the solvent nozzle 41 is clean IPA containing few particles. Therefore, the substrate W can be dried with few particles held on the substrate W. This reduces particles remaining on the dried substrate W, and improves the cleanliness of the dried substrate W.
In the present embodiment, the IPA first passes through the solvent valve 43 when the IPA is discharged toward the substrate W, and the IPA held in the front end flow path 62 when the discharge of the IPA is stopped is discharged from the front end flow path 62. That is, contaminated IPA is discharged from the front-end flow path 62. Therefore, when the IPA held in the front end flow path 62 is supplied to the next substrate W, the contaminated IPA can be prevented from being ejected toward the substrate W. This can improve the cleanliness of each substrate W when processing a plurality of substrates W.
In the present embodiment, when the same IPA is held in the front-end flow path 62 for a long period of time, the solvent valve 43 is opened, and new IPA is supplied into the front-end flow path 62. Thereby, the old IPA is pushed downstream by the new IPA and discharged from the front-end flow path 62. Then, the IPA other than the IPA that first passed through the solvent valve 43, i.e., the clean IPA, is held in the front end flow path 62.
There are cases where the properties of IPA change over time. If the time spent in the front-end flow path 62 is short, only a negligible change occurs, but if the time spent in the front-end flow path 62 is long, a property change that may affect the result of the process may occur. Therefore, by replacing the old IPA with the new clean IPA, quality unevenness in the plurality of substrates W can be suppressed.
In the 1 st processing example of the present embodiment, in order to discharge the IPA held in the front end flow path 62, the supply of the IPA to the substrate W is stopped, and then the solvent valve 43 is opened to supply a new IPA to the front end flow path 62. When the supply of the IPA to the substrate W is stopped, all the IPA held in the front end flow path 62 is pushed downstream by the new IPA, and is ejected from the ejection port 41p of the solvent nozzle 41. This can discharge contaminated IPA held in the front end flow path 62 from the front end flow path 62 when the supply of IPA to the substrate W is stopped.
When the solvent valve 43 is opened, contaminated IPA flowing into the front end flow path 62 is also ejected from the ejection port 41p of the solvent nozzle 41. Then, the solvent valve 43 is closed, and clean IPA is held in the front end flow path 62. Therefore, clean IPA can be supplied to the next substrate W. Further, since the IPA is held in each portion of the front-end flow path 62, the amount of the IPA that can be supplied to the next substrate W can be increased as compared with the case where the IPA is held only in a portion of the front-end flow path 62.
In the processing example 2 of the present embodiment, in order to discharge the IPA held in the front end flow path 62, the supply of the IPA to the substrate W is stopped, and then the suction valve 45 is opened with the solvent valve 43 closed. Accordingly, the suction force is transmitted to the front end flow path 62 via the branch flow path 63, and the IPA is sucked from the downstream portion 62b of the front end flow path 62 to the branch flow path 63. On the other hand, since the solvent valve 43 is closed, the IPA held in the upstream portion 62a of the front end flow path 62 remains there (upstream portion 62 a).
Contaminated IPA flowing into the front flow path 62 when the IPA is ejected toward the substrate W is held in the downstream portion 62b of the front flow path 62. Accordingly, by sucking the IPA from the downstream portion 62b of the front end flow path 62 to the branch flow path 63, the contaminated IPA can be discharged from the front end flow path 62 while leaving the clean IPA in the front end flow path 62. This enables clean IPA to be supplied to the next substrate W. When the IPA is caused to flow back from the downstream portion 62b of the front end flow path 62 to the branch flow path 63, the range from the upstream position of the ejection port 41p of the solvent nozzle 41 to the ejection port 41p of the solvent nozzle 41 becomes empty, and thus, a phenomenon (so-called dripping) in which the IPA unexpectedly falls from the ejection port 41p of the solvent nozzle 41 can be prevented.
Other embodiments
The present invention is not limited to the above embodiments, and various modifications can be made.
For example, the control device 3 may perform the 1 st processing example or the 2 nd processing example when a processing liquid other than IPA such as a chemical solution or a rinse solution is supplied to the substrate W. That is, the processing liquid in which the 1 st processing example and the 2 nd processing example are performed may be other than the processing liquid that adheres to the substrate W when the substrate W is dried.
If the IPA changes with time to a degree that can be ignored for influencing the quality of the substrate W, the control device 3 may omit the processing liquid replacement step in the 1 st processing example and the 2 nd processing example (step S16 in fig. 6 and step S26 in fig. 8).
After the discharge process of the 1 st processing example (step S14 in fig. 6), the control device 3 may perform the IPA supply process of the 1 st processing example (step S12 in fig. 6) and the discharge process of the 2 nd processing example (step S24 in fig. 8). In contrast, the control device 3 may perform the IPA supply process (step S22 in fig. 8) of the processing example 2 and the discharge process (step S14 in fig. 6) of the processing example 1 after performing the discharge process (step S24 in fig. 8) of the processing example 2.
In the first preparation step (step S11 in fig. 6) of the 1 st processing example and the first preparation step (step S21 in fig. 8) of the 2 nd processing example, IPA may be held not only in the front end flow path 62 but also in both the front end flow path 62 and the branch flow path 63. In this case, both the solvent valve 43 and the suction valve 45 may be opened.
When the discharge port 41p of the solvent nozzle 41 is filled with IPA to the downstream end 63d of the branch flow path 63 and the downstream end 63d of the branch flow path 63 is disposed below the discharge port 41p of the solvent nozzle 41, the IPA in the downstream portion 62b of the front end flow path 62 is sucked to the branch flow path 63 side by the principle of siphon (siphon) when the suction valve 45 is opened. Therefore, in the case where the IPA is held in both the front end flow path 62 and the branch flow path 63, the IPA in the downstream portion 62b may be sucked to the side of the branch flow path 63 without using the suction device 46.
In the discharge step (step S14 in fig. 6) of the 1 st processing example, the control device 3 may change the flow rate of the IPA passing through the solvent valve 43 by increasing and decreasing the opening degree of the solvent valve 43 a plurality of times while the solvent valve 43 is opened. In this case, the flow rate of the IPA passing through the solvent valve 43 changes, and the hydraulic pressure applied to the particles adhering to the solvent valve 43 changes. This can effectively separate the fine particles from the solvent valve 43, and can improve the cleanliness of the IPA passing through the solvent valve 43.
Before the IPA supply step (step S12 in fig. 6 and step S22 in fig. 8), the amount of clean IPA held in the front end flow path 62 may be an amount exceeding the amount of IPA supplied to one substrate W, an amount equal to or less than the amount of IPA supplied to two substrates W, or an amount exceeding the amount of IPA supplied to two substrates W. In the latter case, the discharge process (step S14 in fig. 6 and step S24 in fig. 8) need not be performed every time the IPA supply process is performed.
The amount of IPA supplied to one substrate W may be smaller than the amount of chemical supplied to one substrate W. In the case where the diameter of the substrate W is 300mm, the amount of IPA supplied to one substrate W may be an amount exceeding 0 and less than 10ml (for example, 8 ml). Of course, the IPA or more may be supplied to the substrate W.
The solvent nozzle 41 is not limited to a scanning nozzle capable of horizontally moving, and may be a fixed nozzle fixed to the partition wall 5 of the chamber 4 or may be disposed above the substrate W.
The substrate processing apparatus 1 is not limited to an apparatus for processing a disk-shaped substrate W, and may be an apparatus for processing a polygonal substrate W.
Two or more of the above-described entire structures may be combined. Two or more of the above-described all steps may be combined.
The spin chuck 8 is an example of a substrate holding unit. The rotary motor 12 is an example of a drying unit. The solvent valve 43 is an example of a discharge valve. The valve actuator 55 is an example of an electric actuator.
The present application corresponds to japanese patent application No. 2017-215295, filed on the national patent office at 11/8 in 2017, the entire disclosure of which is incorporated herein by reference.
The embodiments of the present invention have been described in detail, but the present invention is merely a specific example for explaining the technical content of the present invention, and the present invention should not be construed as being limited to the specific examples, but the spirit and scope of the present invention are limited only by the appended claims.
Description of the reference numerals
1 Substrate processing apparatus
2 Processing unit
3 Control device
8 Rotating collet (substrate holding unit)
12 Rotating motor (drying unit)
41 Solvent nozzle
41P ejection port
42 Solvent piping
43 Solvent valve (spray valve)
44 Suction pipe
45 Suction valve
46 Suction device
49 Standby tank
51 Valve body
52 Internal flow path
53 Valve seat
54 Valve core
55 Valve actuator (electric actuator)
61 Supply flow passage
62 Front end flow path
62A upstream portion
62B downstream portion
62U upstream end
62D downstream end
63 Branch flow path
64 Suction flow passage
P1 branch position
W is a substrate
Claims (15)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-215295 | 2017-11-08 | ||
| JP2017215295A JP6986933B2 (en) | 2017-11-08 | 2017-11-08 | Board processing method and board processing equipment |
| PCT/JP2018/040403 WO2019093200A1 (en) | 2017-11-08 | 2018-10-30 | Substrate processing method and substrate processing device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111316402A CN111316402A (en) | 2020-06-19 |
| CN111316402B true CN111316402B (en) | 2024-12-06 |
Family
ID=66437746
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201880072183.4A Active CN111316402B (en) | 2017-11-08 | 2018-10-30 | Substrate processing method and substrate processing device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6986933B2 (en) |
| KR (1) | KR102378913B1 (en) |
| CN (1) | CN111316402B (en) |
| TW (1) | TWI704966B (en) |
| WO (1) | WO2019093200A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7292120B2 (en) * | 2019-06-17 | 2023-06-16 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
| KR102346529B1 (en) | 2019-06-24 | 2021-12-31 | 세메스 주식회사 | Unit for supplying liquid, Apparatus and Method for treating substrate with the unit |
| JP7384658B2 (en) * | 2019-12-24 | 2023-11-21 | 株式会社Ｓｃｒｅｅｎホールディングス | Piping cleaning method |
| WO2021230110A1 (en) * | 2020-05-14 | 2021-11-18 | 東京エレクトロン株式会社 | Liquid supplying mechanism, substrate treatment device, and substrate treatment method |
| JP7628033B2 (en) | 2021-03-12 | 2025-02-07 | 株式会社Ｓｃｒｅｅｎホールディングス | SUBSTRATE PROCESSING METHOD AND SUBSTRATE PROCESSING APPARATUS |
| TWI811028B (en) * | 2022-07-19 | 2023-08-01 | 凱爾迪科技股份有限公司 | Self-priming recovery system |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017034188A (en) * | 2015-08-05 | 2017-02-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and processing liquid discharge method |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5471886B2 (en) * | 2010-06-25 | 2014-04-16 | 東京エレクトロン株式会社 | High temperature, high pressure processing method, high temperature, high pressure processing apparatus and storage medium |
| JP5753352B2 (en) | 2010-07-20 | 2015-07-22 | 株式会社Ｓｃｒｅｅｎホールディングス | Diaphragm valve and substrate processing apparatus provided with the same |
| JP5891065B2 (en) * | 2012-02-22 | 2016-03-22 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and processing liquid suction method |
| JP6320805B2 (en) * | 2014-03-17 | 2018-05-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Treatment liquid supply device |
| JP6439964B2 (en) * | 2014-09-17 | 2018-12-19 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing equipment |
| JP6512554B2 (en) * | 2014-09-29 | 2019-05-15 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing method and substrate processing apparatus |
| JP2016127080A (en) * | 2014-12-26 | 2016-07-11 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and substrate processing method |
| JP6319117B2 (en) * | 2015-01-26 | 2018-05-09 | 東京エレクトロン株式会社 | Treatment liquid supply apparatus, treatment liquid supply method, and storage medium |
| JP2017183568A (en) | 2016-03-31 | 2017-10-05 | 株式会社Ｓｃｒｅｅｎホールディングス | Wafer processing apparatus and wafer processing method |
-
2017
- 2017-11-08 JP JP2017215295A patent/JP6986933B2/en active Active
-
2018
- 2018-10-30 TW TW107138390A patent/TWI704966B/en active
- 2018-10-30 KR KR1020207015183A patent/KR102378913B1/en active Active
- 2018-10-30 CN CN201880072183.4A patent/CN111316402B/en active Active
- 2018-10-30 WO PCT/JP2018/040403 patent/WO2019093200A1/en active Application Filing
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017034188A (en) * | 2015-08-05 | 2017-02-09 | 株式会社Ｓｃｒｅｅｎホールディングス | Substrate processing apparatus and processing liquid discharge method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111316402A (en) | 2020-06-19 |
| TW201936272A (en) | 2019-09-16 |
| KR102378913B1 (en) | 2022-03-24 |
| TWI704966B (en) | 2020-09-21 |
| JP2019087652A (en) | 2019-06-06 |
| JP6986933B2 (en) | 2021-12-22 |
| KR20200070388A (en) | 2020-06-17 |
| WO2019093200A1 (en) | 2019-05-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN111316402B (en) | Substrate processing method and substrate processing device | |
| CN107634015B (en) | Substrate processing apparatus and processing cup cleaning method | |
| US8512478B2 (en) | Cleaning and drying-preventing method, and cleaning and drying-preventing apparatus | |
| KR101608105B1 (en) | Liquid processing apparatus and liquid processing method | |
| KR101989230B1 (en) | Substrate processing apparatus and nozzle cleaning method | |
| CN108292599B (en) | Substrate liquid processing apparatus, substrate liquid processing method, and storage medium | |
| CN109564860B (en) | Substrate processing apparatus and substrate processing method | |
| JP6512554B2 (en) | Substrate processing method and substrate processing apparatus | |
| JP7149111B2 (en) | SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD | |
| TW202131437A (en) | Substrate processing apparatus | |
| US20070246079A1 (en) | Multi zone shower head for cleaning and drying wafer and method of cleaning and drying wafer | |
| US10717117B2 (en) | Substrate processing apparatus and substrate processing method | |
| JP7302997B2 (en) | SUBSTRATE PROCESSING APPARATUS AND PIPE CLEANING METHOD OF SUBSTRATE PROCESSING APPARATUS | |
| US10331034B2 (en) | Substrate processing apparatus and substrate processing method | |
| CN114695185A (en) | Substrate processing apparatus and substrate processing method | |
| JP6624599B2 (en) | Substrate processing apparatus and processing liquid discharge method | |
| JP2016042518A (en) | Substrate processing apparatus and substrate processing method | |
| CN110364454B (en) | Substrate processing method and substrate processing apparatus | |
| KR101939905B1 (en) | Substrate processing apparatus and substrate processing method | |
| JP6443806B2 (en) | Substrate processing equipment | |
| TWI856465B (en) | Substrate processing apparatus and substrate processing method | |
| KR20230099585A (en) | Apparatus and Method for treating substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |