CN111315129A - Flexible resistor-capacitor composite copper film structure and circuit board structure using the flexible resistor-capacitor composite copper film structure - Google Patents

Abstract

The invention mainly discloses a flexible resistance-capacitance composite copper film structure, which includes: a first conductive metal layer, a first resistance layer, a first dielectric layer, a flexible support layer, and a second dielectric layer. layer, a second resistive layer, and a second conductive metal layer. In particular, after the soft resistor-capacitor composite copper film structure of the present invention is subjected to two development and etching processes, a top surface of the soft resistor-capacitor composite copper film structure can be produced including at least one thin film resistor element, A first electronic circuit of at least one thin film inductor element and at least one thin film capacitor element; at the same time, a first electronic circuit including at least one thin film resistor element and at least one thin film inductor element is produced on a bottom surface of the flexible resistance capacitor composite copper film structure and a second electronic circuit with at least one thin film capacitive element. Of course, the first electronic circuit can also be coupled to the second electronic circuit by making via holes on the flexible resistor-capacitor composite copper film structure.

Description

Flexible resistor-capacitor composite copper film structure and use of the flexible resistor-capacitor composite copper film Structural circuit board structure

technical field

The invention relates to the technical field of composite copper molds with embedded passive components, in particular to a flexible resistor-capacitor composite copper film structure and a circuit board structure using the flexible resistor-capacitor composite copper film structure.

Background technique

Engineers with electronics, electrical or computer backgrounds should have purchased printed circuit boards (PCBs), and developed, etched, and stripped the printed electrode boards based on a pre-designed circuit layout (circuit layout). After developing/Etching/Stripping, DES) and other processes, a patterned copper foil route can be made on the surface of the circuit board to become an electronic circuit. After completing the fabrication of electronic circuits, pre-determined chips and passive components, such as amplifiers, processors, resistors, capacitors, inductors, etc., are arranged on the electronics.

On the other hand, with the high development of smart technology, lightness and thinness have become the basic specification requirements for portable electronic products. It is conceivable that, as the size of portable electronic products continues to become thinner and lighter, the space for placing electronic chips and passive components inside them is also compressed. Therefore, it is the biggest problem for electronic device manufacturers and assemblers to arrange sufficient electronic components and passive components in the limited internal space of portable electronic products.

In view of this, the corresponding policy of the industry is to continuously reduce the size of passive components. At present, passive components with sizes of 0805 (80×50mil2) and 0603 (60×30mil2) are mainly used in the production of motherboards and notebook computers, while the sizes of 0402 (40×20mil2) and 0201 (20×10mil2) ) are mostly used in smart phones and tablet computers. It can be inferred that the continuous miniaturization of the size of passive components will inevitably encounter technical or process bottlenecks. Therefore, the technology of "Embedded passives" has been paid attention to again in recent years. In particular, 3M Innovative Properties Company proposes a passive electrical article, which is disclosed in US Patent Publication No. US2006/0286696A1.

FIG. 1 is a schematic perspective view showing a known passive electrical structure. As shown in FIG. 1, the known passive electrical structure PE' includes: a first rolled copper layer 11', a resistance layer 12', an insulating layer', and a second rolled copper layer 14'; wherein the resistance layer 12' is nickel Phosphorus compound (Ni-P compound), and the insulating layer 13 ′ is a polymer with a thickness ranging from 6 μm to 20 μm, such as polyimide (PI). Wherein, the first rolled copper layer 11' and the resistance layer 12' form a copper foil resistor 1'. It is worth noting that the polyimide (insulating layer 13') can be further doped with dielectric particles. And, the manufacturing process of the passive electrical structure PE' includes the following steps:

(1) Prepare the first rolled copper layer 11' with an appropriate thickness, and use electroplating technology to form a layer of nickel-phosphorus compound (Ni-P alloy) with a thickness of less than 1 μm on the surface as the resistance layer 12' to complete a copper foil resistor 1' production;

(2) Prepare the second rolled copper layer 14' of an appropriate thickness, and form an insulating layer 13' (PI) with a thickness of 6-20 μm on its surface to complete the manufacture of a copper foil insulating member 1a';

(3) The passive electrical structure PE' is obtained by combining the copper foil resistor 1' and the copper foil local element 1a' by using the resistance layer 12' and the insulating layer 13' to adhere to each other.

完成对于被动电气结构PE’的弯折测试的过程中，发现在被动电气结构PE’被弯折超过40次以后，第一压延铜层11’与电阻层12’之间便开始出现剥离现象。此现象归因于电镀的基材为铜层的毛面，使电阻层12’依循粗糙度极高的毛面成核成长，导致电阻层12’镀层连续性差、多孔不致密；如此微观不但会影响机械性质也导致电阻层阻值无法降低其极限，造成元件设计瓶颈。所以第一压延铜层11’与由镍磷化合物制成的电阻层12’之间接合性仍有待改善。Generally speaking, the thickness of the second rolled copper layer 14 ′ and the first rolled copper layer 11 ′ is 36 μm, that is, the overall thickness of the passive electrical structure PE′ falls between 79 μm and 93 μm. However, it must be specially pointed out that since the nickel-phosphorus compound is formed on the matt side (Mattside) of the first rolled copper layer 11' through the electroplating process, the resistance layer 12' is formed on the matt side of the first rolled copper layer 11', and the electroplating process produces a large amount of high-phosphorus electroplating. The problem of wastewater discharge and treatment will arise. On the other hand, using a bending tester, the diameter of the round shaft is

During the bending test of the passive electrical structure PE', it was found that after the passive electrical structure PE' was bent more than 40 times, a peeling phenomenon began to occur between the first rolled copper layer 11' and the resistance layer 12'. This phenomenon is attributable to the fact that the electroplated substrate is the rough surface of the copper layer, so that the resistance layer 12' nucleates and grows along the rough surface with extremely high roughness, resulting in poor continuity of the coating of the resistance layer 12' and non-dense porous; Affecting the mechanical properties also leads to the inability of the resistance value of the resistive layer to reduce its limit, resulting in a bottleneck in the design of components. Therefore, the bonding between the first rolled copper layer 11' and the resistance layer 12' made of nickel-phosphorus compound still needs to be improved.

To sum up, if the resistive elements required for the electronic circuit are fabricated on the passive electrical structure pe' containing the copper foil resistor 1', the passive electrical structure PE' must be etched at least three times. Due to manufacturing requirements, in the first step, the copper foil in the area that does not need lines and the resistance layer 12' (nickel-phosphorus compound) below it should be removed with etching solution respectively; in the second step, the copper foil in the predetermined resistance area should be removed using etching solution. foil. Due to the poor corrosion resistance of nickel-phosphorus compounds, in order to avoid poor reliability of resistance element products and to meet customer line size accuracy requirements, at least three etchings are required. The more the number of operations, the more quality and yield problems will arise. Furthermore, since the coating density and continuity of the copper foil resistor 1' are not perfect, after the electronic circuit is fabricated on the passive electrical structure PE' by developing and etching technology, the line width/line spacing of the electronic circuit is usually greater than 30 microns. /micron.

In addition, Oak-Mitsui Inc. also proposed a multi-layered construction for resistor and capacitor formation, which is disclosed in US Patent No. US7,192,654B2 among. FIG. 2 is a schematic perspective view of a known multilayer structure with resistors and capacitors. As shown in FIG. 2, the known multilayer structure MS' with resistors and capacitors includes: a first rolled copper layer 21', a resistance layer 22', a first dielectric layer 23', an insulating layer 24', a second The dielectric layer 25' and the second rolled copper layer 26'; wherein, the insulating layer 24' is a polymer with a thickness ranging from 6 μm to 20 μm, such as polyimide (PI), And the first rolled copper layer 21' and the resistance layer 22' form a copper foil resistor 2'. And, the manufacturing process of the multilayer structure MS' with resistors and capacitors includes the following steps:

(1) prepare the first rolled copper layer 21' of appropriate thickness, utilize electroplating technology to form a layer of nickel-phosphorus compound with a thickness of less than 1 μm on its surface as the resistance layer 22', and complete the manufacture of a copper foil resistor 2';

(2) Prepare an insulating layer (PI) 24', a first dielectric layer 23' and a second dielectric layer 25' with appropriate thicknesses, and the first dielectric layer 23' and the second dielectric layer 25' respectively attached to one surface and the other surface of the insulating layer 24' to obtain a dielectric insulating member 2a';

(3) Prepare a second rolled copper layer 26' with an appropriate thickness, and press the second rolled copper layer 26', the dielectric insulating member 2a' and the copper foil resistor 2' in sequence, wherein the copper foil resistor The resistance layer 22' of 2' is attached to the first dielectric layer 23' of the dielectric insulating member 2a'.

Generally speaking, the thickness of the second rolled copper layer 26 ′ and the first rolled copper layer 21 ′ is 36 μm, and the thickness of the first dielectric layer 23 ′ and the second dielectric layer 25 ′ is 8 μm. The thickness of the insulating layer 24 ′ is between 6 μm and 20 μm. That is, the overall thickness of the multilayer structure MS' with resistors and capacitors falls between 94 μm and 108 μm.

In addition, the same as the passive electrical structure PE' disclosed in US Patent Publication No. US2006/0286696 A1, the nickel-phosphorus compound is formed on the Matt side of the first rolled copper layer 21' through an electroplating process. For the resistance layer 22 ′, a large amount of high-phosphorus electroplating solution generated in the electroplating process will cause the problem of waste water discharge and treatment. On the other hand, in the process of completing the bending test of the multilayer structure MS' with resistors and capacitors with a circular shaft diameter of 4 mm using a bending tester, it was found that the multilayer structure MS' with resistors and capacitors was bent. After more than 40 folds, the peeling phenomenon begins to occur between the first rolled copper layer 21' and the resistance layer 22'. This phenomenon is attributed to the fact that the electroplated substrate is the rough surface of the copper layer, so that the resistance layer nucleates and grows along the rough surface with extremely high roughness. As a result, the resistance value of the resistive layer cannot be reduced to its limit, resulting in a bottleneck in the design of components.

It can be seen from the above description that the existing multi-layer structure with resistors, inductors and capacitors obviously has many defects; and the overall thickness is thick, mostly thick film design, such as: copper foil conductive layer with a thickness of more than 12 microns , Dielectric layers with a thickness of more than 10 microns, glass fiber reinforced epoxy resins with a thickness of more than 100 microns, and green paint glass fiber reinforced epoxy resin hard boards, so they cannot be effectively thinned. In view of this, the inventor of this case has made great efforts to research and create inventions, and finally developed a flexible resistor-capacitor composite copper film structure and a circuit board structure using the flexible resistor-capacitor composite copper film structure of the present invention.

SUMMARY OF THE INVENTION

In view of the above problems existing in the prior art, the purpose of the present invention is to provide a flexible resistor-capacitor composite copper film structure, which includes: a first conductive metal layer, a first resistance layer, a first dielectric layer, A flexible support layer, a second dielectric layer, a second resistance layer and a second conductive metal layer. In particular, after the flexible resistance-capacitor composite copper film structure of the present invention is subjected to two development and etching treatments, at least one thin film resistance element, A first electronic circuit of at least one thin film inductance element and at least one thin film capacitive element; and at the same time, at least one thin film resistance element and at least one thin film inductance element are fabricated on the bottom surface of the flexible resistance capacitance composite copper film structure. A second electronic circuit with at least one thin film capacitive element. Of course, the first electronic circuit can also be coupled to the second electronic circuit by forming a via hole on the flexible resistance-capacitor composite copper film structure.

In the flexible resistor-capacitor composite copper film structure, the first dielectric layer and the second dielectric layer are made of specially designed dielectric materials, so their dielectric constants are between 4 and 68 , and its dielectric loss is less than 0.02. Furthermore, in addition to being used as a flexible printed circuit board (FPC), the flexible resistor-capacitor composite copper film structure of the present invention can also form a flexible-hard composite board with at least one circuit board.

In order to achieve the above object, the present invention provides the first embodiment of the flexible resistor-capacitor composite copper film structure, which includes:

a first conductive metal layer;

A first resistance layer, a surface of which is bonded to a surface of the first conductive metal layer, and is composed of nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys, or tungsten base alloy;

a first dielectric layer, one surface of which is bonded to the other surface of the first resistive layer;

a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;

a bonding layer, one surface of which is bonded to the other surface of the flexible support layer; and

A second conductive metal layer is formed on the other surface of the bonding layer.

In order to achieve the above object, the present invention provides a second embodiment of the flexible resistance-capacitor composite copper film structure, which includes:

a first conductive metal layer;

A first resistance layer, a surface of which is bonded to a surface of the first conductive metal layer, and is composed of nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys, or tungsten base alloy;

a first dielectric layer, one surface of which is bonded to the other surface of the first resistive layer;

A second resistive layer, one surface of which is bonded to the other surface of the first dielectric layer, and is composed of nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys , or made of tungsten-based alloys; and

A second conductive metal layer is formed on the other surface of the second resistance layer.

In order to achieve the above object, the present invention provides a third embodiment of the flexible resistor-capacitor composite copper film structure, which includes:

a first conductive metal layer;

A first resistance layer, a surface of which is bonded to a surface of the first conductive metal layer, and is composed of nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys, or tungsten base alloy;

a first dielectric layer, one surface of which is bonded to the other surface of the first resistive layer;

a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;

a second dielectric layer, one surface of which is bonded to the other surface of the flexible support layer

A second resistive layer, one surface of which is bonded to the other surface of the second dielectric layer, and is composed of nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys , or made of tungsten-based alloys; and

A second conductive metal layer is formed on the other surface of the second resistance layer.

In order to achieve the above purpose, the present invention provides a fourth embodiment of the flexible resistor-capacitor composite copper film structure, which includes:

a first conductive metal layer;

A first resistance layer, a surface of which is bonded to a surface of the first conductive metal layer, and is composed of nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys, or tungsten base alloy;

a first flexible support layer, one surface of which is bonded to the other surface of the first resistive layer;

a first dielectric layer, one surface of which is bonded to the other surface of the first flexible support layer;

a second flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;

A second resistive layer, one surface of which is bonded to the other surface of the second flexible support layer, and is composed of nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium base alloy, or tungsten base alloy; and

A second conductive metal layer is formed on the other surface of the second resistance layer.

In any embodiment of the flexible resistor-capacitor composite copper film structure of the present invention, the first dielectric layer and the second dielectric layer include:

a first dielectric material having a first dielectric constant and a first loss factor;

a second dielectric material having a second dielectric constant and a second loss factor, and which acts as a dielectric constant modifier; and

A polymer bonding material, wherein after bonding the first dielectric material and the second dielectric material with the polymer bonding material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material is subjected to an ingot sintering process Then it becomes the first dielectric layer and/or the second dielectric layer.

In any of the above embodiments of the flexible resistor-capacitor composite copper film structure of the present invention, after undergoing a sintering process, the first dielectric constant of the first dielectric material is greater than 999, and the first loss factor thereof less than 0.029, and the first dielectric material can be any of the following: barium titanate, lead oxide (PbO) doped barium titanate, yttrium oxide (Y ₂ O ₃ ) doped barium titanate, doped barium titanate Magnesium oxide (MgO) barium titanate, or calcium oxide (CaO)-doped barium titanate.

In any of the above embodiments of the flexible resistor-capacitor composite copper film structure of the present invention, after a sintering process, the second dielectric constant of the second dielectric material is less than 5, and the second loss factor thereof is less than 0.01, and the second dielectric material may be any of the following: polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), or polyetheretherketone (PEEK).

In any of the above embodiments of the flexible resistor-capacitor composite copper film structure of the present invention, the dielectric constants of the first dielectric layer and/or the second dielectric layer are both greater than 8, and the loss factors thereof are both less than 0.02 .

In any of the above embodiments of the flexible resistor-capacitor composite copper film structure of the present invention, the polymer bonding material has a semi-curing property, and is any one of the following: epoxy resin, polyvinylidene fluoride (PVDF), polyimide (PI), or phosphorus-containing resin.

In any embodiment of the flexible resistor-capacitor composite copper film structure of the present invention, the epoxy resin (Epoxy) can be any one of the following: bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol F epoxy resin Phenol S epoxy resin, novolac epoxy resin, bisphenol A novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, containing Phosphorus epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenyl novolac epoxy resin, phenolic phenyl alkyl novolac epoxy resin, a combination of any two of the above, or a combination of any two or more of the above .

In any embodiment of the flexible resistive-capacitor composite copper film structure of the present invention, the phosphorus-containing resin can be any one of the following: 9,10-dihydro-9-oxa-10-phosphaphenanthrene- 10-oxide or phosphorus-containing bisphenol A phenolic resin.

In any embodiment of the above-mentioned flexible resistor-capacitor composite copper film structure of the present invention, both the first dielectric layer and the second dielectric layer further include a hardening material, and the hardening material may be any one of the following : Crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.

In any embodiment of the flexible resistive-capacitive composite copper film structure of the present invention, the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diamine diphenyl Sulfonamide, hydrazide, dihydrazide, dicyanamide, or adipic acid dihydrazide.

In any embodiment of the flexible resistive-capacitor composite copper film structure of the present invention, the hardening accelerator can be any one of the following: imidazole, boron trifluoride amine compound, ethyl triphenyl phosphine chloride , 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.

In any embodiment of the flexible resistance-capacitor composite copper film structure of the present invention, the flame retardant can be any one of the following: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris(2-carboxyethyl) phosphine, tris(isochloro) phosphate, trimethyl phosphate, dimethyl-methyl phosphate, resorcinol bis-xylyl Phosphate, melamine polyphosphate, phosphorus nitrogen based compounds, or azo phosphorus compounds.

In any embodiment of the flexible resistive-capacitor composite copper film structure of the present invention, the surfactant can be any one of the following: silane compounds, siloxane compounds, aminosilane compounds, and any of the above polymer, or a polymer of any two or more of the above.

In any of the above embodiments of the flexible resistive-capacitive composite copper film structure of the present invention, the toughening agent may be any one of the following: rubber resin, polybutadiene, or core-shell polymer.

In any of the above embodiments of the flexible resistor-capacitor composite copper film structure of the present invention, the solvent may be any one of the following: toluene, xylene, glycol ester, propylene glycol methyl ether ethyl ester, and propylene glycol methyl ether propyl ester , acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or with diethylene glycol butyl ether.

In any embodiment of the above-mentioned flexible resistance-capacitor composite copper film structure of the present invention, the leveling agent can be a copolymer containing pigment affinity groups adsorbed on silica produced by BYK, Germany, such as: BYK-3950P, BYK-3951P, BYK-3955P and Disperbyk-2200.

In any embodiment of the flexible resistor-capacitor composite copper film structure of the present invention, the defoamer may be isoparaffin and paraffin-based naphthenic mixtures produced by BYK in Germany, such as: BYK-1790, BYK- 1794 with BYK-A530.

In any embodiment of the flexible resistive-capacitive composite copper film structure of the present invention, the anti-settling agent and the liquid thixotropy control agent can be modified urea solution produced by BYK in Germany, such as BYK-7410ET.

In any of the above embodiments of the flexible resistive-capacitor composite copper film structure of the present invention, the wetting and dispersing agent may be hydroxy-functional carboxylate, linear polymer copolymer, and polyester with a highly chemical structure produced by BYK, Germany. and acrylic copolymers such as: Disperbyk-107, Disperbyk-111, Disperbyk-118, Disperbyk-2013 and Disperbyk-9010.

In any of the above embodiments of the flexible resistor-capacitor composite copper film structure of the present invention, the substrate wetting agent may be fluorine-free polyether-modified dimethylsiloxane and polyether-modified dimethyl siloxane produced by BYK, Germany. Polydimethylsiloxane, such as: BYK-3455 and BYK-333.

Description of drawings

1 is a schematic perspective view of a known passive electrical structure;

2 is a schematic perspective view of a known multilayer structure with resistors and capacitors;

3A is a schematic perspective view of a first embodiment of a flexible resistor-capacitor composite copper mold structure of the present invention;

3B is a schematic perspective view of a second embodiment of a flexible resistor-capacitor composite copper mold structure of the present invention;

3C is a schematic perspective view of a third embodiment of a flexible resistor-capacitor composite copper mold structure of the present invention;

3D is a schematic perspective view of a fourth embodiment of a flexible resistor-capacitor composite copper mold structure of the present invention;

Fig. 4 is a schematic flow chart 1 of the fabrication of a flexible resistor-capacitor composite copper mold structure of the present invention;

Fig. 5 is a schematic flow chart 2 of a flexible resistance-capacitor composite copper mold structure of the present invention;

Fig. 6 is a schematic flow chart 3 of the manufacture of a flexible resistor-capacitor composite copper mold structure of the present invention;

7A to 7D are exploded action diagrams of the development and etching process including the flexible resistor-capacitor composite copper mold structure of the present invention;

8 is an image diagram of electron back-scattered diffraction (EBSD) of a sample of copper foil resistors disclosed in US Patent Publication No. US2006/0286696A1;

9 is an EBSD image diagram of a sample of a copper foil resistor with a flexible resistor-capacitor composite copper film structure of the present invention;

FIG. 10 is a schematic diagram of the execution flow of the bending test.

Reference number:

<Prior Art Mark>

PE’ passive electrical structure

11' first rolled copper layer

12' Resistive Layer

13' insulation

14' second rolled copper layer

1' copper foil resistor

1a’ copper foil insulation

MS’ multilayer structure with resistors and capacitors

21' first rolled copper layer

22' Resistive Layer

23' first dielectric layer

24' insulation

25' second dielectric layer

26' second rolled copper layer

2' copper foil resistor

2a’ Dielectric Insulator

<Mark of the present invention>

PSD flexible resistor-capacitor composite copper film structure

11 The first conductive metal layer

12 The first resistive layer

Ie1 first dielectric layer

Ie2 second dielectric layer

FS flexible support layer

FS1 first flexible support layer

FS2 second flexible support layer

Ad followed by layer

21 Second conductive metal layer

22 Second resistive layer

CR1 First resistor copper film unit

CR2 Second resistor copper film unit

CI Dielectric Layer Unit

ST1 first stack unit

ST2 second stack unit

PR1 first photoresist

pPR1 patterned first photoresist

PR2 second photoresist

p11 Patterned first conductive metal layer

p21 patterned second conductive metal layer

W11 first etching window

W12 Second etch window

W21 third etch window

W22 Fourth etching window

R1 first thin film resistor

R2 second thin film resistor

L1 first thin film inductor

L2 second thin film inductor

UM upper metal plate

LM lower sheet metal

TH1 first punch

TH2 second perforation

CP1 first contact

CP2 second contact

Detailed ways

In order to more clearly describe a flexible resistor-capacitor composite copper film structure of the present invention and a circuit board structure using the flexible resistor-capacitor composite copper film structure, preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings. .

3A is a schematic perspective view of a first embodiment of a flexible resistor-capacitor composite copper mold structure of the present invention; as shown in FIG. 3A , the flexible resistor-capacitor composite copper film structure PSD of the present invention includes: a first conductive The metal layer 11 , a first resistance layer 12 , a first dielectric layer Ie1 , a flexible support layer FS, an adhesive layer Ad, and a second conductive metal layer 21 . Wherein, the thickness of the first conductive metal layer 11 and the second conductive metal layer 21 is between 0.4 μm and 50 μm, and the process materials can be silver (Ag), copper (Cu), gold (Au), Aluminum (Al), a silver complex, a copper complex, a gold complex, an aluminum complex, a complex of any two of the above, or a complex of any two or more of the above.

As shown in FIG. 3A , a surface of the first resistance layer 12 is bonded to a surface of the first conductive metal layer 11 , and its thickness is less than 2 μm. A common material of the first conductive metal layer 11 is copper, and the first resistance layer 12 can be formed on the first conductive metal layer 11 through a sputtering process. Of course, in order to shorten the process time of the first resistive layer 12 , the first resistive layer 12 can be fabricated by partial sputtering and partial electroplating. However, it must be emphasized that the sputtered first resistive layer 12 has better coating density and continuity. In the present invention, the process material of the first resistance layer 12 may be nickel, chromium, tungsten, nickel metal compound, chromium metal compound, tungsten metal compound, nickel-based alloy, chromium-based alloy, or tungsten-based alloy. Among them, exemplary materials of the first resistive layer 12 are listed in the following table (1).

Table 1)

where x, y, and z are atomic percentages, and the sum of the three is 1. Also, M is a metal such as copper (Cu), molybdenum (Mo), vanadium (V), tungsten (W), iron (Fe), aluminum (Al), or titanium (Ti). On the other hand, N is a non-metal such as boron (B), carbon (C), nitrogen (N), oxygen (O), or silicon (Si).

In more detail, one surface of the first dielectric layer Ie1 is bonded to the other surface of the first resistive layer 12 , and one surface of the flexible support layer FS is bonded to the other surface of the first dielectric layer Ie1 a surface. According to the design of the present invention, the thickness of the first dielectric layer Ie1 is between 0.01 μm and 50 μm, and the thickness of the flexible support layer FS is between 5 μm and 350 μm. Generally speaking, the first dielectric layer Ie1 includes a polymer matrix and a plurality of dielectric particles doped in the polymer matrix, wherein the dielectric particles can be a high dielectric material, a Dielectric material, a low dielectric material, or a mixture of any of the above. The series of different kinds of dielectric particles are listed in the following table (2), which is for reference only and is not used to limit the material composition of the first dielectric layer Ie1. However, it must be further explained that the first dielectric layer Ie1 can also be a sputtering layer. In particular, the sputtered layer includes a perovskite or a spinel structure, and a trace element is added; wherein, the trace element is any one of the following: lanthanide, osmium, rare earth element, or alkaline earth element. It is worth noting that the trace elements are used to adjust the number of internal donners and accepters in the perovskite or spinel structure, so that the entire sputtered layer has low/highk and highQ dielectric properties .

Table 2)

On the other hand, the flexible support layer FS is a flexible substrate. In more detail, a flexible substrate with a thickness of less than 200 microns has flexibility. In the present invention, the process material of the flexible support layer FS can be any one of the following: rubber resin, polybutadiene or core-shell polymer, polyethylene terephthalate (PET), polyimide (PI), polytetrafluoroethylene (PVDF), polyether ether ketone (PEEK), polytetrafluoroethylene (PTFE), epoxy resin (Epoxy) a blend of any two of the above, or any two or more of the above blend.

Furthermore, one surface of the adhering layer Ad is bonded to the other surface of the flexible support layer FS, and has a thickness of less than 2 μm. In the present invention, the process material of the adhesive layer Ad can be any one of the following: nickel, chromium, tungsten, nickel metal compounds, chromium metal compounds, tungsten metal compounds, nickel-based alloys, chromium-based alloys, or tungsten-based alloys , and relevant exemplary materials can be found in Table (1) above. On the other hand, the process material of the adhesive layer Ad can also be a nickel-copper alloy, a nickel-titanium alloy, a copper-titanium alloy, or a chromium-nickel alloy.

3B is a schematic perspective view of a second embodiment of a flexible resistor-capacitor composite copper film structure of the present invention. As shown in FIG. 3B , the second embodiment of the flexible resistance-capacitor composite copper film structure PSD of the present invention includes: a first conductive metal layer 11 , a first resistance layer 12 , a first dielectric layer Ie1 , a first Two resistive layers 22 and a second conductive metal layer 21 . On the other hand, FIG. 3C is a schematic perspective view of a third embodiment of a flexible resistor-capacitor composite copper film structure of the present invention. As shown in FIG. 3C , the third embodiment of the flexible resistor-capacitor composite copper film structure PSD of the present invention includes: a first conductive metal layer 11 , a first resistance layer 12 , a first dielectric layer Ie1 , a The bending support layer FS, a second dielectric layer Ie2 , a second resistance layer 22 , and a second conductive metal layer 21 are provided. After comparing FIG. 3B and FIG. 3C, it can be found that the flexible resistive-capacitor composite copper film structure of the third embodiment further includes a flexible support layer FS and a second dielectric layer Ie2, and the two layers are inserted into the first dielectric layer. between the two resistance layers 22 and the first dielectric layer Ie1. In more detail, one surface of the flexible support layer FS is bonded to the other surface of the first dielectric layer Ie1, and one surface of the second dielectric layer Ie2 is bonded to the other surface of the flexible support layer FS. surface, so that one surface of a second resistive layer 22 is bonded to the other surface of the second dielectric layer Ie2. It is particularly emphasized that the common process materials of the first dielectric layer Ie1 have been introduced in the foregoing description, and the common process materials of the second dielectric layer Ie2 are basically the same as those of the first dielectric layer Ie1, so the description will not be repeated.

Further, FIG. 3D is a schematic perspective view of a fourth embodiment of a flexible resistor-capacitor composite copper film structure of the present invention. As shown in FIG. 3D , the fourth embodiment of the flexible resistance-capacitor composite copper film structure PSD of the present invention includes: a first conductive metal layer 11 , a first resistance layer 12 , a first flexible support layer FS1 , A first dielectric layer Ie1 , a second flexible support layer FS2 , a second resistance layer 22 , and a second conductive metal layer 21 . Wherein, a surface of the first resistance layer 12 is bonded to a surface of the first conductive metal layer 11 , a surface of the first flexible support layer FS1 is bonded to the other surface of the first resistance layer 12 , the One surface of the first dielectric layer Ie1 is bonded to the other surface of the first flexible support layer FS1, and one surface of the second flexible support layer FS2 is bonded to the other surface of the first dielectric layer Ie1 , and one surface of the second resistive layer 22 is bonded to the other surface of the second flexible support layer FS2 . Further, the second conductive metal layer 21 is formed on the other surface of the second resistance layer 22 .

In particular, the main technical feature of the present invention is that the dielectric constant of the second dielectric layer Ie2 and/or the first dielectric layer Ie1 can be easily regulated within the range of 4 to 68 by using material design , and at the same time, the dielectric loss of the second dielectric layer Ie2 and the first dielectric layer Ie1 may be less than 0.02. In terms of material composition, the present invention makes the second dielectric layer Ie2 and the first dielectric layer Ie1 include: a first dielectric material, a second dielectric material, a polymer bonding material, and a hardening material. Wherein, the first dielectric material has a high dielectric constant and a low loss factor, and the second dielectric material is used as a dielectric constant adjuster, and has a low dielectric constant and a low loss factor. The condition for selecting the first dielectric material is that after sintering, the dielectric constant of the first dielectric material must be greater than 999 (ie ≧1000), and its loss factor must be less than 0.029 (ie ≦0.3). Therefore, suitable as the first dielectric material may be barium titanate, lead oxide (PbO) doped barium titanate, yttrium oxide (Y2O3) doped barium titanate, magnesium oxide (MgO) doped barium titanate Barium, or barium titanate doped with calcium oxide (CaO). On the other hand, the condition for selecting the second dielectric material is that after sintering, the dielectric constant of the second dielectric material must be less than 5, and the loss factor thereof must be less than 0.01. Therefore, suitable as the second dielectric material may be polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), or polyetheretherketone (PEEK).

In the present invention, the polymer bonding material must have semi-curing properties, that is, the properties of softening when heated and pressurized, and solidified by reaction after cooling. Therefore, after the polymer bonding material is used to bond the first dielectric material and the second dielectric material, a semi-cured dielectric material can be obtained, and the semi-cured dielectric material is subjected to an ingot sintering process into The first dielectric layer Ie1 and the second dielectric layer Ie2. Since the first dielectric material and the second dielectric material are appropriately selected in the present invention, the final dielectric constant of the first dielectric layer Ie1 and the second dielectric layer Ie2 will be greater than 8, and the loss factor thereof will be less than 0.02 . It is added that the polymer adhesive material can be any one of the following: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), polyimide (PI), or phosphorus-containing resin.

In more detail, the epoxy resin (Epoxy) can be any one of the following: bisphenol A epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol A novolac Epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene ring Oxygen resin, biphenyl novolac epoxy resin, phenolic phenyl alkyl novolac epoxy resin, a combination of any two of the above, or a combination of any two or more of the above. On the other hand, the phosphorus-containing resin suitable for the polymer binding material may be 9,10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.

In addition to the polymer bonding material, the first dielectric material and the second dielectric material, the material composition of the first dielectric layer Ie1 and the second dielectric layer Ie2 further includes a hardening material, and the hardening material may be the following Any one of: a crosslinking agent, a hardening accelerator, a flame retardant, a leveling agent, an antifoaming agent, a dispersing agent, an anti-settling agent, a primer, a surfactant, a toughening agent, or a solvent. In more detail, the crosslinking agent is an amine adduct, and the amine adduct can be any of the following: diaminodiphenylsulfoneamine, hydrazide, dihydrazide, dicyanamide, or hexamethylene acid dihydrazide. On the other hand, the hardening accelerator can be any one of the following: imidazole, boron trifluoride amine complex, ethyl triphenyl phosphine chloride, 2-methyl imidazole, 2-phenyl imidazole, 2-ethyl yl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.

According to the above description, the flame retardant can be any one of the following: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis-(diphenyl phosphate), tris(2-carboxyethyl) Phosphine, tris(isochloro)phosphate, trimethylphosphate, dimethyl-methylphosphate, resorcinol bis-xylylphosphate, melamine polyphosphate, phosphorus nitrogen-based compound, or azophosphine compound. In addition, the surfactant may be any one of the following: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above. On the other hand, the toughening agent can be any of the following: a rubber resin, polybutadiene, or a core-shell polymer. Furthermore, the solvent can be any one of the following: toluene, xylene, glycol ester, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether , ethylene glycol ethyl ether, propylene glycol methyl ether, or with diethylene glycol butyl ether.

To further illustrate, the leveling agent can be a copolymer containing pigment affinity groups adsorbed on silica produced by BYK Germany, such as: BYK-3950P, BYK-3951P, BYK-3955P and Disperbyk-2200. In addition, the defoamer can be a mixture of isoparaffins and paraffin-based naphthenes produced by BYK Germany, such as BYK-1790, BYK-1794 and BYK-A530. On the other hand, the anti-settling agent and liquid thixotropy control agent can be modified urea solution (such as BYK-7410ET) produced by German BYK, and the wetting dispersing agent can be hydroxy-functional carboxylate, linear polymer copolymer produced by German BYK Polyester and acrylic copolymers with highly modified structures, such as: Disperbyk-107, Disperbyk-111, Disperbyk-118, Disperbyk-2013 and Disperbyk-9010. Furthermore, the substrate wetting agent can be fluorine-free polyether-modified dimethylsiloxane and polyether-modified polydimethylsiloxane produced by BYK, Germany, such as BYK-3455 and BYK-333.

Fabrication of Flexible Resistor-Capacitor Composite Copper Film Structure (1)

Continue to refer to FIG. 3B , and please refer to FIG. 4 at the same time, which is a schematic flow chart of the fabrication of the flexible resistor-capacitor composite copper film structure of the present invention. The manufacturing process of the second embodiment of the flexible resistor-capacitor composite copper film structure PSD of the present invention includes the following steps:

(1) As shown in (a) of FIG. 4 , a first resistance layer 12 is formed on a surface of the first metal conductive layer 11 through a sputtering process to obtain a first resistance copper film unit CR1;

(2) As shown in (b) of FIG. 4, a second resistance layer 22 is formed on a surface of the second metal conductive layer 21 through a sputtering process to obtain a second resistance copper film unit CR2;

(3) As shown in (c) of FIG. 4, the semi-cured first dielectric layer Ie1 is placed between the first resistive copper film unit CR1 and the second resistive copper film unit CR2, and then three performing a vacuum thermocompression bonding process; and

(4) As shown in (d) of FIG. 4 , after the vacuum thermocompression bonding process is completed, the flexible resistor-capacitor composite copper film structure PSD of the present invention is obtained.

Fabrication of Flexible Resistor-Capacitor Composite Copper Film Structure (2)

Continue to refer to FIG. 3C , and also refer to FIG. 5 , which is a schematic flow chart of the fabrication of the flexible resistor-capacitor composite copper film structure of the present invention. The manufacturing process of the third embodiment of the flexible resistor-capacitor composite copper film structure PSD of the present invention includes the following steps:

(1a) As shown in (a) of FIG. 5 , a first resistance layer 12 is formed on a surface of the first metal conductive layer 11 through a sputtering process to obtain a first resistance copper film unit CR1;

(2a) As shown in (b) of FIG. 5 , a second resistance layer 22 is formed on a surface of the second metal conductive layer 21 through a sputtering process to obtain a second resistance copper film unit CR2;

(3a) As shown in (c) of FIG. 5 , the semi-cured first dielectric layer Ie1 and the semi-cured second dielectric layer Ie2 are respectively bonded to a flexible support layer through a coating process On both surfaces of the FS, a dielectric layer unit CI is obtained;

(4a) As shown in (d) of FIG. 5, the dielectric layer unit CI is placed between the first resistive copper film unit CR1 and the second resistive copper film unit CR2, and then a vacuum is performed on the three thermocompression bonding process; and (5a) after the vacuum thermocompression bonding process is completed, the flexible resistor-capacitor composite copper film structure PSD of the present invention is obtained, wherein no air bubbles or bonding occurs between any two bonding units Uneven things.

Fabrication of Flexible Resistor-Capacitor Composite Copper Film Structure (3)

Continue to refer to FIG. 3D , and please refer to FIG. 6 at the same time, which shows a schematic flow chart of the fabrication of the flexible resistor-capacitor composite copper film structure of the present invention. The manufacturing process of the fourth embodiment of the flexible resistor-capacitor composite copper film structure PSD of the present invention includes the following steps:

(1b) As shown in (a) of FIG. 6 , a first resistance layer 12 is formed on a surface of the first metal conductive layer 11 through a sputtering process, and a first flexible support layer FS1 is bonded to the On the other surface of the first metal conductive layer 11, a first stacked unit ST1 is obtained;

(2b) As shown in (b) of FIG. 6 , a second resistive layer 22 is formed on a surface of the second metal conductive layer 21 through a sputtering process, and a second flexible support layer FS2 is bonded to the On the other surface of the second metal conductive layer 21, a second stacked unit ST2 is obtained;

(3b) As shown in (c) of FIG. 6 , the semi-cured first dielectric layer Ie1 is placed between the first stacked unit ST1 and the second stacked unit ST2, and then the three are performed a vacuum thermocompression bonding process; and

(4b) As shown in (d) of FIG. 6 , after the vacuum thermocompression bonding process is completed, the flexible resistor-capacitor composite copper film structure PSD of the present invention is obtained.

Application of Flexible Resistor-Capacitor Composite Copper Film Structure

In particular, after the development and etching process is applied to the flexible resistor-capacitor composite copper film structure PSD of the present invention, at least one film resistor and at least one film inductor can be fabricated on a top surface thereof. (Film inductor) and a first electronic circuit of at least one thin film capacitive element (Film capacitor); and, at the same time, at least one thin film resistive element can also be fabricated on a bottom surface of the flexible resistive capacitor composite copper film structure. , A second electronic circuit of at least one thin film inductance element and at least one thin film capacitive element. In the following, the related reasons will be explained in conjunction with the exploded action diagram of the development and etching process.

7A to 7D are exploded action diagrams of the development and etching process including the flexible resistor-capacitor composite copper mold structure of the present invention. Please refer to FIG. 3C and FIG. 7A at the same time. When performing the development and etching process, first coat the first photoresist PR1 on the first conductive metal layer 11 and the second conductive metal layer 21 (as shown in (a) and (b) of FIG. 7A ); then , a patterned first photoresist pPR1 is fabricated on the first conductive metal layer 11 and the second conductive metal layer 21 by exposure and development (as shown in (a') and (b') of FIG. 7A . shown).

Continue, use an etchant to simultaneously remove the portion of the first conductive metal layer 11 and the first resistive layer 12 that are not covered by the patterned first photoresist pPR1, and also remove the second conductive metal layer 21 with the etchant The portion of the second resistive layer 22 that is not covered by the patterned first photoresist pPR1 (as shown in (a) and (b) of FIG. 7B ). Next, as shown in (a') and (b') of FIG. 7B, the patterned first photoresist pPR1 is removed, and then a patterned first conductive metal layer p11 is obtained between the first dielectric layer Ie1 and at the same time obtain a patterned second conductive metal layer p21 on the second dielectric layer Ie2. It is added that, with the aid of FIG. 3C , it should be understood that the first dielectric layer Ie1 and the second dielectric layer Ie2 are respectively bonded to two surfaces of the flexible support layer FS.

Next, as shown in (a) and (b) of FIG. 7C, a second photoresist PR2 is continuously coated on the patterned first conductive metal layer p11 and the first dielectric layer Ie1, and the first The two photoresists PR2 are simultaneously covered on the patterned second conductive metal layer p21 and the second dielectric layer Ie2. It should be noted that FIG. 7C represents the second photoresist PR2 with a semi-transparent material, in order to completely display the changes of the patterned first conductive metal layer p11 and the patterned second conductive metal layer p21 in the subsequent manufacturing process. In particular, FIG. 7C shows that a first etching window W11 and a second etching window W12 are opened on the second photoresist PR2 on the top surface, and the first etching window W11 and the second etching window W12 are opposite to each other above the patterned first conductive metal layer p11. At the same time, a third etching window W21 and a fourth etching window W22 are also opened on the second photoresist PR2 on the bottom surface, and the third etching window W21 and the fourth etching window W22 are located opposite to the patterning above the second conductive metal layer p21.

Continuingly, the portion of the patterned first conductive metal layer p11 not covered by the second photoresist PR2 is removed through the first etching window W11 and the second etching window W12 by using an etching solution. At the same time, the portion of the patterned second conductive metal layer p11 not covered by the second photoresist PR2 is also removed through the third etching window W21 and the fourth etching window W21 by using an etchant. With reference to FIG. 3C , it should be understood that, after the wet etching is completed using the etching solution, as shown in (a') and (b') of FIG. 7C , the part of the first resistance layer 12 is Exposed through the first etching window W11 and the second etching window W12, and part of the first resistance layer 22 is also exposed through the third etching window W21 and the fourth etching window W22.

Finally, as shown in (a) and (b) of FIG. 7D, after removing the second photoresist PR2, the patterned first conductive metal layer p11, a first thin film resistor R1, and a first thin film inductor L1 are included. , and a first electronic circuit of an upper metal plate UM on the first dielectric layer Ie1. Meanwhile, a second electronic circuit including the patterned second conductive metal layer p21, a second thin film resistor R2, a second thin film inductor L2, and a lower metal plate LM is on the second dielectric layer Ie2. It is worth noting that the upper metal plate UM and the lower metal plate LM are sandwiched between the first resistance layer 12, the first dielectric layer Ie1, the flexible support layer FS, the second dielectric layer Ie2, and the first dielectric layer Ie1. Two resistive layers 12 . It should be understood that the first resistive layer 12, the first dielectric layer Ie1, the flexible foldable support layer FS, the second dielectric layer Ie2, and the second resistive layer 12 serve as capacitive dielectric layers, so that the upper metal plate The UM, the capacitor dielectric layer and the lower metal plate LM constitute an embedded capacitor.

Further, a first through hole TH1 can be formed on a first contact CP1 of the first electronic circuit by laser etching technology, and a second through hole TH2 can be formed on a second contact CP2 of the second electronic circuit . Electronic engineers familiar with the fabrication of double-layer circuit boards should understand that the main body of the first electronic circuit is the patterned first conductive metal layer p11, and the main body of the second electronic circuit is the patterned second conductive metal layer p21 . Further, by filling the first through holes TH1 and the first through holes TH2 with a conductive material (eg, solder), the first contact CP1 and the second contact CP2 can be electrically connected, thereby way to electrically connect the first electronic circuit and the second electronic circuit.

Therefore, it can be seen from FIGS. 7A to 7D that after two developing and etching treatments are applied to the flexible resistor-capacitor composite copper film structure PSD of the present invention, a top surface of the flexible resistor-capacitor composite copper film structure can be formed. A first electronic circuit including at least one first thin film resistive element R1, at least one first thin film inductance element L1 and at least one thin film capacitive element is fabricated on it; and, at the same time, the flexible resistor-capacitor composite copper film structure PSD is A second electronic circuit including at least one second thin film resistive element R2, at least one second thin film inductance element L2 and at least one thin film capacitive element is fabricated on a bottom surface of the device. Of course, the first electronic circuit can also be coupled to the second electronic circuit by making through holes ( TH1 , TH2 ) on the flexible resistance-capacitor composite copper film structure PSD.

In particular, in addition to being directly applied as a flexible printed circuit board (FPC), the flexible resistance-capacitor composite copper film structure PSD of the present invention can also form a rigid-flex composite board (Rigid-flex composite board) with at least one circuit board. board).

Experimental example

In order to confirm that the flexible resistor-capacitor composite copper film structure PSD of the present invention is indeed compared with the copper foil resistor 1' of the passive electrical structure PE' (as shown in FIG. 1) disclosed in US Patent Publication No. US2006/0286696 A1 With excellent properties, the inventors of the present application simultaneously completed the fabrication of the copper foil resistor unit (CR1, CR2) as shown in FIG. 5 and the sample of the copper foil resistor 1' as shown in FIG. 1 . FIG. 8 is an image diagram of electron back-scattered diffraction (EBSD) of a sample of copper foil resistor disclosed in US Patent Publication No. US2006/0286696 A1, and FIG. 9 is a flexible resistor capacitor of the present invention EBSD image of the sample of the copper foil resistor with the composite copper film structure. In contrast to the known technique of electroplating a Ni-P compound onto the Matt side of the first rolled copper layer 11' to form the so-called resistive layer 12', the present invention uses a sputtering technique. An alloy, metal, or metal compound resistive film (ie, the first resistive layer 12 ) is formed on a first conductive metal layer 11 (eg, copper foil). Moreover, as can be seen from Figure 7, because the thin film produced by electroplating will nucleate and grow along the surface of the copper foil conductor, the discontinuity and high roughness of the plating layer are both important for electrical properties (surface resistance) and mechanical properties. Adverse effects of (bend stretch) and (thin) line yield. On the contrary, it can be observed from FIG. 8 that the resistive layer 12 of the Ni _0.97 Cr _0.3 alloy fabricated by sputtering shows continuous compactness and small surface roughness, which is suitable for bendable products and thin circuit design. The resistive film of the resistive copper film unit CR of the present invention has better plating compactness and continuity.

Next, a bending test is performed on a half structure of the flexible resistance-capacitor composite copper film structure PSD of the present invention, and the half structure refers to only including a first conductive metal layer 11 , a first resistance layer 12 , and a first dielectric layer. layer Ie1, and a flexible support layer FS. FIG. 9 is a schematic diagram of the execution flow of the bending test. As shown in (a) and (b) of Figure 10, the bending test of three groups of samples with different copper layer thicknesses was performed by using a bending tester to control the circular axis (bending) radius of 1.5mm to make the single-sided flexible resistance The capacitive composite copper film is bent from 0 degrees to 90 degrees; then, as shown in (b) and (c) of Figure 10, continue to operate the bending tester with a circular axis (bending) radius of 1.5mm. The surface flexible resistance-capacitor composite copper film is bent from 90 degrees to 180 degrees, and the load is 0.5 kg. The entire first set of bending tests were repeated 5,000 times as shown in Figures (a) to (c), and the tests were performed in accordance with the JIS-C-50168.7 test specification. The experimental data of the bending test are organized in Figure 10.

From the experimental data of the bending test in Fig. 10, it can be easily found that no matter the bending radius is 1.5 mm, the half structure of the flexible resistance-capacitor composite copper film structure PSD of the present invention is bent 5000 times. The measured resistance values of the first resistance layer 12 in the half structure of the flexible resistance-capacitor composite copper film structure PSD of the present invention are not changed. In the process of using a bending tester to complete the bending test of the half structure of the flexible resistance-capacitor composite copper film structure PSD with a circular axis radius of 1.5mm, it was found that after the bending times exceeded 5000 times, no conductivity and The phenomenon of film peeling and copper breaking; the thinner the copper thickness, the better the bending resistance. Therefore, the test results show that the alloy, metal, or metal compound resistive film (ie, the first resistive layer 12 ) formed on the first conductive metal layer 11 (eg: copper foil) by sputtering technology, which is closely related to copper There is very good bonding between the foils, which improves the reliability and bendability of the copper foil resistor units (CR1, CR2).

In this way, the above has completely and clearly explained all the embodiments of the flexible resistor-capacitor composite copper film structure PSD of the present invention and its structural composition; and, through the above, it can be known that the present invention has the following advantages:

(1) The flexible resistance-capacitor composite copper film structure PSD of the present invention includes: a first conductive metal layer 11, a first resistance layer 12, a first dielectric layer Ie1, a flexible foldable support layer FS, a first Two dielectric layers Ie2 , a second resistance layer 12 , and a second conductive metal layer 22 . In particular, after applying two developing and etching treatments to the flexible resistance-capacitor composite copper film structure PSD of the present invention, a top surface of the flexible resistance-capacitor composite copper film structure PSD can be fabricated including at least one first A first electronic circuit of the thin film resistance element R1, at least one first thin film inductance element L1 and at least one thin film capacitance element; and, at the same time, on a bottom surface of the flexible resistance capacitance composite copper film structure PSD, a structure including A second electronic circuit of at least one second thin film resistance element R2, at least one second thin film inductance element L2 and at least one thin film capacitive element. Of course, the first electronic circuit can also be coupled to the second electronic circuit by making through holes ( TH1 , TH2 ) on the flexible resistance-capacitor composite copper film structure PSD.

(2) In particular, in addition to being directly used as a flexible printed circuit board (FPC), the flexible resistor-capacitor composite copper film structure of the present invention can also be combined with at least one circuit board to form a rigid-flex composite board (Rigid -flex board).

(2) It must be emphasized that the sputtered resistive layer 12 has better coating density and continuity, so the minimum value of its sheet resistance can be less than or equal to 5 ohms/□. Meanwhile, the alloy, metal, or metal compound resistive film (resistive layer 12 ) fabricated by sputtering technology can also effectively reduce the generation of industrial waste water.

(3) The resistance layer 12 made by sputtering has excellent coating density and continuity. After the electronic circuit is fabricated in the embedded passive element structure PSD by the developing etching technology, the line width/line spacing of the electronic circuit can be It is controlled to be less than 10 microns/10 microns, and the bending test shows that the embedded flexible resistor-capacitor composite copper film has excellent bendability.

(4) The process is simple, and the embedded RLC circuit can be completed with only two etching processes and one drilling and plating process.

(5) The dielectric constant and dielectric loss factor of the dielectric layer developed by the present invention are excellent, and the material composition and design are unique and novel; the dielectric constant value can be higher than the current industry highest level k>30, which is helpful It can be used in future miniaturized circuit design.

It must be emphasized that the above detailed description is a specific description of a feasible embodiment of the present invention, but the embodiment is not intended to limit the patent scope of the present invention, and any equivalent implementation or modification without departing from the technical spirit of the present invention , should be included in the scope of the patent in this case.

Claims (60)

1. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:

a first conductive metal layer;

a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;

a first dielectric layer having one surface bonded to the other surface of the first resistive layer;

a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;

a bonding layer having one surface bonded to the other surface of the flexible support layer; and

a second conductive metal layer formed on the other surface of the junction layer.

2. The composite copper mold structure of claim 1, wherein:

the first dielectric layer includes:

a first dielectric material having a first dielectric constant and a first loss factor;

a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and

and a polymer adhesive material, wherein after the first dielectric material and the second dielectric material are adhered by the polymer adhesive material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material becomes the first dielectric layer after an ingot pressing and sintering process.

3. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:

wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped₂O₃) Barium titanate, barium titanate doped with magnesium oxide (MgO), or barium titanate doped with magnesium oxide (MgO)Barium titanate of calcium oxide (CaO).

4. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:

wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).

5. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:

the dielectric constant of the first dielectric layer is larger than 8, and the loss factor is smaller than 0.02.

6. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:

wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.

7. The composite copper mold structure of claim 6, wherein:

wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.

8. The composite copper mold structure of claim 6, wherein:

wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.

9. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:

wherein the first dielectric layer further comprises a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.

10. A flexible resistor capacitor composite copper mold structure according to claim 2, wherein:

wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.

11. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:

wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.

12. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:

wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.

13. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:

wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.

14. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:

wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.

15. A flexible resistor capacitor composite copper mold structure according to claim 9, wherein:

wherein the solvent may be any one of: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.

16. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:

a first conductive metal layer;

a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;

a first dielectric layer having one surface bonded to the other surface of the first resistive layer;

a second resistance layer having one surface bonded to the other surface of the first dielectric layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy; and

a second conductive metal layer formed on the other surface of the second resistance layer.

17. A flexible resistor capacitor composite copper mold structure according to claim 16, wherein:

the first dielectric layer includes:

a first dielectric material having a first dielectric constant and a first loss factor;

a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and

and a polymer adhesive material, wherein after the first dielectric material and the second dielectric material are adhered by the polymer adhesive material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material becomes the first dielectric layer after an ingot pressing and sintering process.

18. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:

wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped₂O₃) Barium titanate doped with magnesium oxide (MgO), or barium titanate doped with calcium oxide (CaO).

19. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:

wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).

20. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:

the dielectric constant of the first dielectric layer is larger than 8, and the loss factor is smaller than 0.02.

21. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:

wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.

22. A flexible resistor capacitor composite copper mold structure according to claim 21, wherein:

wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.

23. A flexible resistor capacitor composite copper mold structure according to claim 21, wherein:

wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.

24. A flexible resistor capacitor composite copper mold structure according to claim 17, wherein:

wherein the first dielectric layer further comprises a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.

25. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:

wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.

26. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:

wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.

27. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:

wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.

28. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:

wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.

29. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:

wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.

30. A flexible resistor capacitor composite copper mold structure according to claim 24, wherein:

the solvent may be any one of the following: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.

31. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:

a first conductive metal layer;

a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;

a first dielectric layer having one surface bonded to the other surface of the first resistive layer;

a flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;

a second dielectric layer having one surface bonded to the other surface of the flexible support layer

A second resistance layer having one surface bonded to the other surface of the second dielectric layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy; and

a second conductive metal layer formed on the other surface of the second resistance layer.

32. A flexible resistor capacitor composite copper mold structure according to claim 31, wherein:

wherein the first dielectric layer and the second dielectric layer both comprise:

a first dielectric material having a first dielectric constant and a first loss factor;

a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and

and a polymer adhesive material, wherein the polymer adhesive material is used for bonding the first dielectric material and the second dielectric material to obtain a semi-cured dielectric material, and the semi-cured dielectric material is formed into the first dielectric layer and the second dielectric layer after an ingot pressing and sintering process.

33. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:

wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped₂O₃) Barium titanate doped with magnesium oxide (MgO), or barium titanate doped with calcium oxide (CaO).

34. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:

wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).

35. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:

wherein the dielectric constants of the first and second dielectric layers are both greater than 8, and the loss factors thereof are both less than 0.02.

36. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:

wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.

37. A flexible resistor capacitor composite copper mold structure according to claim 36, wherein:

wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.

38. A flexible resistor capacitor composite copper mold structure according to claim 36, wherein:

wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.

39. A flexible resistor capacitor composite copper mold structure according to claim 32, wherein:

wherein the first dielectric layer and the second dielectric layer each further comprise a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.

40. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:

wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.

41. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:

wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.

42. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:

wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.

43. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:

wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.

44. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:

wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.

45. A soft resistor capacitor composite copper mold structure as recited in claim 39, wherein:

wherein the solvent may be any one of: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.

46. The utility model provides a compound copper mould structure of soft resistance capacitance which characterized in that includes:

a first conductive metal layer;

a first resistance layer having one surface bonded to one surface of the first conductive metal layer and made of nickel, chromium, tungsten, a nickel metal compound, a chromium metal compound, a tungsten metal compound, a nickel-based alloy, a chromium-based alloy, or a tungsten-based alloy;

a first flexible supporting layer, one surface of which is combined with the other surface of the first resistance layer;

a first dielectric layer, one surface of which is combined with the other surface of the first flexible supporting layer;

a second flexible support layer, one surface of which is bonded to the other surface of the first dielectric layer;

a second resistance layer, one surface of which is bonded to the other surface of the second flexible supporting layer and which is made of nickel, chromium, tungsten, nickel metal compound, chromium metal compound, tungsten metal compound, nickel-based alloy, chromium-based alloy, or tungsten-based alloy; and

a second conductive metal layer formed on the other surface of the second resistance layer.

47. A soft RC composite Cu die structure as recited in claim 46, wherein:

the first dielectric layer includes:

a first dielectric material having a first dielectric constant and a first loss factor;

a second dielectric material having a second dielectric constant and a second loss factor and serving as a dielectric constant modifier; and

and a polymer adhesive material, wherein after the first dielectric material and the second dielectric material are adhered by the polymer adhesive material, a semi-cured dielectric material is obtained, and the semi-cured dielectric material becomes the first dielectric layer after an ingot pressing and sintering process.

48. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:

wherein, after undergoing a sintering process, the first dielectric material has a first dielectric constant greater than 999 and the first loss factor less than 0.029, and the first dielectric material can be any one of the following: barium titanate, lead oxide (PbO) -doped barium titanate, yttrium oxide (Y) -doped₂O₃) Barium titanate doped with magnesium oxide (MgO), or barium titanate doped with calcium oxide (CaO).

49. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:

wherein, after a sintering process, the second dielectric material has a second dielectric constant less than 5 and the second loss factor less than 0.01, and the second dielectric material can be any one of the following: polyvinylidene fluoride (PVDF), Polytetrafluoroethylene (PTFE), or Polyetheretherketone (PEEK).

50. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:

the dielectric constant of the first dielectric layer is larger than 8, and the loss factor is smaller than 0.02.

51. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:

wherein the polymer adhesive material has a semi-curing characteristic, and is any one of the following substances: epoxy resin (Epoxy), polyvinylidene fluoride (PVDF), Polyimide (PI), or phosphorus-containing resin.

52. A soft resistor capacitor composite copper mold structure as recited in claim 51, wherein:

wherein the Epoxy resin (Epoxy) may be any one of the following: bisphenol a epoxy resin, bisphenol F epoxy resin, bisphenol S epoxy resin, novolac epoxy resin, bisphenol a novolac epoxy resin, o-cresol epoxy resin, trifunctional epoxy resin, tetrafunctional epoxy resin, dicyclopentadiene epoxy resin, phosphorus-containing epoxy resin, p-xylene epoxy resin, naphthalene epoxy resin, biphenol aldehyde epoxy resin, phenol-based phenylalkyl novolac epoxy resin, a combination of any two of the foregoing, or a combination of any two or more of the foregoing.

53. A soft resistor capacitor composite copper mold structure as recited in claim 51, wherein:

wherein the phosphorus-containing resin may be any one of: 9, 10-dihydro-9-oxa-10-phosphaphenanthrene-10-oxide or phosphorus-containing bisphenol A phenolic resin.

54. A soft resistor capacitor composite copper mold structure as recited in claim 47, wherein:

wherein the first dielectric layer further comprises a hardening material, and the hardening material may be any one of the following: crosslinking agent, hardening accelerator, flame retardant, leveling agent, defoaming agent, dispersing agent, anti-settling agent, primer, surfactant, toughening agent or solvent.

55. A soft RC composite Cu die structure as claimed in claim 54, wherein:

wherein the crosslinking agent is an amine adduct, and the amine adduct can be any one of the following: diaminodiphenylsulfone amines, hydrazides, dihydrazides, dicyanamides, or adipic dihydrazides.

56. A soft RC composite Cu die structure as claimed in claim 54, wherein:

wherein the hardening accelerator may be any one of the following: imidazole, boron trifluoride amine complex, ethyltriphenylphosphine chloride, 2-methylimidazole, 2-phenylimidazole, 2-ethyl-4-methylimidazole, triphenylphosphine, or dimethylaminopyridine.

57. A soft RC composite Cu die structure as claimed in claim 54, wherein:

wherein the flame retardant may be any one of: bisphenol biphenyl phosphate, ammonium polyphosphate, hydroquinone-bis- (diphenyl phosphate), tris (2-carboxyethyl) phosphine, tris (isopropylchloro) phosphate, trimethylphosphate, dimethyl-methyl phosphate, resorcinol bisxylyl phosphate, melamine polyphosphate, a phosphorus nitrogen-based compound, or a phosphorus nitrogen-coupled compound.

58. A soft RC composite Cu die structure as claimed in claim 54, wherein:

wherein the surfactant may be any one of: a silane compound, a siloxane compound, an aminosilane compound, a polymer of any two of the above, or a polymer of any two or more of the above.

59. A soft RC composite Cu die structure as claimed in claim 54, wherein:

wherein the toughening agent may be any one of: rubber resin, polybutadiene, or core-shell polymers.

60. A soft RC composite Cu die structure as claimed in claim 54, wherein:

wherein the solvent may be any one of: toluene, xylene, glycol esters, propylene glycol methyl ether ethyl ester, propylene glycol methyl ether propyl ester, acetone, methyl ethyl ketone, methyl isobutyl ketone, ethylene glycol butyl ether, ethylene glycol ethyl ether, propylene glycol methyl ether, or diethylene glycol butyl ether.

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