CN111293215A - Magnetic tunnel junction device based on two-dimensional free magnetic layer and its fabrication method - Google Patents

Abstract

The invention provides a magnetic tunnel junction device based on a two-dimensional free magnetic layer and a manufacturing method thereof. The device includes: a first metal connection layer formed on a CMOS circuit substrate and connected to the drain of a MOS transistor; A metal transition layer; a fixed magnetic layer; a tunneling layer; a free magnetic layer, wherein the free magnetic layer is a two-dimensional ferromagnetic material layer; a second metal transition layer; and a second metal connection layer. In the present invention, after the tunneling layer is fabricated, the atomic layer deposition process, the chemical vapor deposition process or the film stripping-transfer process is used to fabricate the free magnetic layer. Compared with the sputtering process, the tunneling layer can be prevented from being sputtered by particles. damage and improve the quality of the tunneling layer. The free magnetic layer of the present invention is a two-dimensional ferromagnetic material layer, and its thickness is relatively thin, on the one hand, the magnetization orientation speed of the magnetic tunnel junction device can be improved, and on the other hand, a relatively light and thin magnetic tunnel junction device can be obtained.

Description

Magnetic tunnel junction device based on two-dimensional free magnetic layer and its fabrication method

technical field

The invention belongs to the field of semiconductor integrated circuit design and manufacture, in particular to a magnetic tunnel junction device based on a two-dimensional free magnetic layer and a manufacturing method thereof.

Background technique

As the use of portable computing devices and wireless communication devices increases, memory devices may require higher density, lower power consumption, and/or non-volatility. The magnetic memory device may be able to meet the above-mentioned technical requirements.

Many electronic devices contain electronic memory. Electronic storage can be volatile or non-volatile. Non-volatile memory can store data when power is lost, whereas volatile memory cannot store data when power is lost. Magnetoresistive random access memory (MRAM) is a promising candidate for the next generation of electronic memory due to its advantages over current electronic memory. MRAM is generally faster and has better endurance than current non-volatile memories such as flash random access memory. Compared to current volatile memories such as dynamic random access memory (DRAM) and static random access memory (SRAM), MRAM typically has similar performance and density, but MRAM has lower power consumption. Since MTJ devices have high operating speed and low power consumption and are used to replace capacitors of DRAMs, MTJ devices can be applied to image devices and mobile devices having low power consumption and high speed.

The magnetoresistive device has low resistance when the spin directions (ie, the directions of the magnetic fluxes) of the two magnetic layers are the same as each other, and has high resistance when the spin directions are opposite to each other. In this way, bit data can be written into a magnetoresistive memory device using a change in cell resistance that is dependent on the magnetization state of the magnetic layer. A magnetoresistive memory having an MTJ structure will be described by way of example. In an MTJ memory cell having a structure composed of a ferromagnetic layer/insulating layer/ferromagnetic layer, when electrons passing through the first ferromagnetic layer pass through the insulating layer serving as a tunneling barrier, tunneling The penetration probability varies depending on the magnetization direction of the second ferromagnetic layer. That is, when the magnetization directions of the two ferromagnetic layers are parallel, the tunneling current is maximized, and when they are antiparallel, the tunneling current is minimized. For example, it can be considered that when the resistance is high, data "1" is written, and when the resistance is low, data "0" is written. When current flows through the magnetic layer, the current will be polarized, forming a spin-polarized current. The spin electron transfers the spin momentum to the magnetic moment of the free magnetic layer, so that the magnetic moment of the spin magnetic layer changes direction after acquiring the spin momentum. This process is called spin transfer torque. The current realizes the writing of information.

The core of the STT-MRAM memory cell is still an MTJ, which consists of two ferromagnetic layers of different thicknesses and a non-magnetic isolation layer several nanometers thick. With external circuitry, current can flow through the MTJ in a direction perpendicular to the MJT surface. When an electric current passes through a thicker ferromagnetic layer (called a pinned magnetic layer), the electrons are spin-polarized in the direction of the magnetic moment of the pinned magnetic layer. If the thickness of the intermediate nonmagnetic spacer is small enough to ensure a high degree of polarization, the spin-polarized electrons are able to transfer their spin angular momentum to the thinner ferromagnetic layer (called the free magnetic layer), changing the free magnetic The magnetization equilibrium state of the layer. The fixed magnetic layer that plays the role of "polarization layer" is generally thick (tens of nanometers), its saturation magnetization is very large, and its equilibrium state will not change. On the contrary, the free magnetic layer to be affected by the spin moment effect is generally very thin, and its saturation magnetization is small, so its magnetic moment vector can freely change its orientation according to the polarization direction of the spin electrons in the spin current.

The structure of the STT-MRAM memory cell is simple, it omits the additional write information line with a magnetic shell, minimizes the preparation process, and reduces the cross-sectional area of the memory cell, high storage density, and fast storage speed. Design requirements for high performance computer systems.

In the MTJ spin valve of the STT-MRAM memory cell, the tunneling probability of spin electrons is related to the material of each magnetic layer, the material of the tunneling layer, and the thickness. According to the tunneling probability formula, the thinner the tunneling layer, the greater the tunneling probability, and the higher the quality requirements of the tunneling layer.

SUMMARY OF THE INVENTION

In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a magnetic tunnel junction device based on a two-dimensional free magnetic layer and a manufacturing method thereof, so as to solve the problem that the growth quality of the tunnel layer in the prior art is difficult to guarantee , the tunneling layer has many defects and the thickness of the free magnetic layer is large, which leads to the problem of slow orientation change.

In order to achieve the above object and other related objects, the present invention provides a method for manufacturing a magnetic tunnel junction device based on a two-dimensional free magnetic layer, the manufacturing method comprising the steps of: 1) forming a fixed magnetic layer on a substrate; A tunneling layer is formed on the fixed magnetic layer; 3) Atomic layer deposition process, chemical vapor deposition process or thin film stripping-transfer process is used to deposit a free magnetic layer on the tunneling layer, and the free magnetic layer is two-dimensional iron layer of magnetic material.

Optionally, step 1) includes: 1-1) providing a CMOS circuit substrate, forming a first metal connection layer on the CMOS circuit substrate and performing a planarization process on the first metal connection layer, the first metal connection layer is The metal connection layer is connected to the drain of the MOS transistor of the CMOS circuit; 1-2) A first metal transition layer is formed on the first metal connection layer; 1-3) Atomic layer deposition process and chemical vapor deposition process are used or a thin film lift-off-transfer process to deposit the pinned magnetic layer on the first metal transition layer.

Optionally, the first metal transition layer has a flat surface, the fixed magnetic layer is closely combined with the first metal transition layer, and the Fermi level of the first metal transition layer is the same as that of the fixed magnetic layer. The Fermi level is equal or similar to reduce the contact resistance between the fixed magnetic layer and the first metal transition layer, and the lattice constant of the fixed magnetic layer is close to the first metal transition layer to reduce the Thermal and lattice mismatches between the magnetic layer and the first metal transition layer are fixed.

Optionally, the CMOS circuit substrate includes a CMOS circuit layer based on an SOI substrate and a planarized dielectric layer covering the CMOS circuit layer.

Optionally, step 3) further includes: 3-1) forming a tunnel isolation top layer on the free magnetic layer, and the tunnel isolation top layer is a two-dimensional insulating material layer; 3-2) on the tunnel isolation layer forming a second metal transition layer on the top layer; 3-3) forming a second metal connection layer on the second metal transition layer; 3-4) patterning and etching the second metal connection layer and the second metal transition layer , a free magnetic layer, a tunneling layer, a fixed magnetic layer, a first metal transition layer and a first metal connection layer to form a magnetic tunnel junction device with a columnar structure.

Optionally, the two-dimensional insulating material layer includes one of two-dimensional boron nitride, fluorinated graphene and graphene oxide.

Optionally, the material of the free magnetic layer includes one of CrGeTe ₃ and CrI ₃ .

Optionally, the tunneling layer is a two-dimensional insulating material layer, and the two-dimensional insulating material layer includes one of two-dimensional boron nitride, fluorinated graphene, and graphene oxide.

The present invention also provides a magnetic tunnel junction device based on a two-dimensional free magnetic layer, comprising: a first metal connection layer, the first metal connection layer is formed on a CMOS circuit substrate, the first metal connection layer is connected to The drain of the MOS transistor of the CMOS circuit is connected; the first metal transition layer is formed on the first metal connection layer; the fixed magnetic layer is formed on the first metal transition layer; the tunnel layer is formed on the the fixed magnetic layer; a free magnetic layer formed on the tunneling layer, the free magnetic layer being a two-dimensional ferromagnetic material layer; a second metal transition layer formed on the free magnetic layer; a second metal transition layer A connection layer is formed on the second metal transition layer.

Optionally, the first metal transition layer has a flat surface, the fixed magnetic layer is closely combined with the first metal transition layer, and the Fermi level of the first metal transition layer is the same as that of the fixed magnetic layer. The Fermi level is equal or similar to reduce the contact resistance between the fixed magnetic layer and the first metal transition layer, and the lattice constant of the fixed magnetic layer is close to the first metal transition layer to reduce the Thermal and lattice mismatches between the magnetic layer and the first metal transition layer are fixed.

Optionally, the CMOS circuit substrate includes a CMOS circuit layer based on an SOI substrate and a planarized dielectric layer covering the CMOS circuit layer.

Optionally, the shape of the magnetic tunnel junction device includes a cylindrical structure, and the diameter of the cylindrical structure ranges from 10 nm to 200 nm.

Optionally, the material of the free magnetic layer includes one of CrGeTe ₃ and CrI ₃ .

Optionally, the tunneling layer is a two-dimensional insulating material layer with a single crystal structure, and the two-dimensional insulating material layer includes one of two-dimensional boron nitride, graphene fluoride and graphene oxide.

Optionally, a tunnel isolation top layer is further included between the free magnetic layer and the second metal transition layer, and the tunnel isolation top layer is a two-dimensional insulating material layer of a single crystal structure, and the two-dimensional insulating material The layer includes one of two-dimensional boron nitride, fluorinated graphene, and graphene oxide.

As described above, the magnetic tunnel junction device based on the two-dimensional free magnetic layer and the fabrication method thereof of the present invention have the following beneficial effects:

In the present invention, after the tunneling layer is fabricated, the atomic layer deposition process is used to fabricate the free magnetic layer. Compared with the sputtering process, the tunneling layer can be prevented from being damaged by the sputtering particles and the quality of the tunneling layer can be improved.

By using the atomic layer deposition process to make the free magnetic layer, the tunneling layer of the present invention can be a two-dimensional insulating material layer with a very thin thickness, and the consistency of the tunneling layer is very good, which can ensure the quality and function of the tunneling layer at the same time. , greatly improving the tunneling probability.

The free magnetic layer of the present invention is a two-dimensional ferromagnetic material layer, and its thickness is relatively thin, on the one hand, the magnetization orientation speed of the magnetic tunnel junction device can be improved, and on the other hand, a relatively light and thin magnetic tunnel junction device can be obtained.

The invention can directly prepare the magnetic tunnel junction device on the traditional silicon-based CMOS circuit, thereby reducing the device preparation cost.

Description of drawings

FIG. 1 to FIG. 8 are schematic structural diagrams of each step of the fabrication method of the magnetic tunnel junction device of the present invention.

FIG. 9 is a schematic diagram showing the structure of the tunneling layer of the magnetic tunnel junction device of the present invention.

FIG. 10 is a schematic diagram showing the structure of the free magnetic layer of the magnetic tunnel junction device of the present invention.

FIG. 11 is a schematic flow chart showing the steps of the fabrication method of the magnetic tunnel junction device of the present invention.

Component label description

10 CMOS circuit substrate

101 SOI substrate

102 CMOS circuit layers

103 Dielectric Layer

201 The first metal connection layer

202 The first metal transition layer

203 Fixed magnetic layer

204 Tunneling layer

205 Free magnetic layer

206 The second metal transition layer

207 Second metal connection layer

208 Tunneling isolation top layer

Steps S11～S18

Detailed ways

The embodiments of the present invention are described below through specific specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and various details in this specification can also be modified or changed based on different viewpoints and applications without departing from the spirit of the present invention.

Please refer to Figure 1 to Figure 11. It should be noted that the diagrams provided in this embodiment are only to illustrate the basic concept of the present invention in a schematic way, so the diagrams only show the components related to the present invention rather than the number, shape and the number of components in the actual implementation. For dimension drawing, the type, quantity and proportion of each component can be changed at will in actual implementation, and the component layout may also be more complicated.

As shown in FIG. 1 to FIG. 11 , this embodiment provides a method for fabricating a magnetic tunnel junction device, and the fabrication method includes the steps:

As shown in FIG. 1 and FIG. 11 , step 1) S11 is first performed, a CMOS circuit substrate 10 is provided, a first metal connection layer 201 is formed on the CMOS circuit substrate 10 and the first metal connection layer 201 is flattened The first metal connection layer 201 is connected to the drain of the MOS transistor of the CMOS circuit.

In this embodiment, the CMOS circuit substrate 10 may be a CMOS circuit layer 102 based on an SOI substrate 101 and a planarized dielectric layer 103 covering the CMOS circuit layer 102 , and is not limited to the examples listed here.

The material of the first metal connection layer 201 may be one of W, Cu and Al.

The first metal connection layer 201 in this embodiment is formed on a flat dielectric layer 103 , and the first metal connection layer 201 can be planarized to obtain a first metal connection layer 201 with a flat surface, so as to improve the subsequent first metal connection layer 201 . The flatness of a metal transition layer 202 .

As shown in FIG. 2 and FIG. 11 , step 2) S12 is performed to form a first metal transition layer 202 on the first metal connection layer 201 .

For example, the first metal transition layer 202 has a flat surface, and the Fermi energy level of the first metal transition layer 202 is equal to or similar to the Fermi energy level of the subsequently formed fixed magnetic layer 203, so as to reduce the fixed magnetic energy The contact resistance between the layer 203 and the first metal transition layer 202, the lattice constant of the fixed magnetic layer is similar to that of the first metal transition layer, so as to reduce the contact resistance between the fixed magnetic layer and the first metal transition layer. Thermal mismatch and lattice mismatch.

As shown in FIG. 3 and FIG. 11 , step 3) S13 is performed, and the fixed magnetic layer 203 is deposited on the first metal transition layer 202 by atomic layer deposition, chemical vapor deposition or thin film lift-off-transfer process.

Since the first metal transition layer 202 has a flat surface, and the Fermi level of the first metal transition layer 202 is equal to or similar to the Fermi level of the pinned magnetic layer 203 , the pinned magnetic layer can be 203 is closely combined with the first metal transition layer 202 to reduce the contact resistance between the fixed magnetic layer 203 and the first metal transition layer 202, and the lattice constant of the fixed magnetic layer is related to the first metal transition layer. The layers are close to each other to reduce thermal mismatch and lattice mismatch between the fixed magnetic layer and the first metal transition layer.

For example, the material of the fixed magnetic layer 203 includes one of CoFeB, elemental ferromagnetic material and alloyed ferromagnetic material.

Atomic layer deposition process, chemical vapor deposition process or thin film lift-off-transfer process can effectively improve the deposition quality of the fixed magnetic layer 203 , and the surface of the fixed magnetic layer 203 can be more flat, which can effectively improve the quality of the tunneling layer 204 produced subsequently.

As shown in FIG. 4 and FIG. 11 , then step 4) S14 is performed to form a tunneling layer 204 on the fixed magnetic layer 203 .

As an example, the tunneling layer 204 may be an Al ₂ O ₃ single crystal layer or an amorphous layer, or a MgO single crystal layer or an amorphous layer, and the like, and the thickness of the tunneling layer 204 may range from 1 to 2 nm. The tunneling layer 204 may be formed by a chemical vapor deposition process or an atomic layer deposition process, so as to avoid damage to the interface between the fixed magnetic layer 203 and the tunneling layer 204 caused by sputtering particles.

As shown in FIG. 5 and FIG. 11 , then step 5) S15 is performed, and a free magnetic layer 205 is deposited on the tunneling layer 204 by an atomic layer deposition process, a chemical vapor deposition process or a thin film lift-off-transfer process. The layer 205 is a two-dimensional ferromagnetic material layer. The structure of the free magnetic layer is shown in FIG. 9 . A tunnel isolation top layer 208 is formed on the free magnetic layer 205 , and the tunnel isolation top layer 208 is a two-dimensional insulating layer. material layer.

In this embodiment, after the tunneling layer 204 is fabricated, the free magnetic layer 205 is fabricated by an atomic layer deposition process. Compared with the sputtering process, the tunneling layer 204 can be prevented from being damaged by sputtering particles, and the tunneling layer can be improved. 204 quality.

The material of the free magnetic layer 205 may be one of CrGeTe ₃ and CrI ₃ . The free magnetic layer of the present invention is a two-dimensional ferromagnetic material layer, and its thickness is relatively thin, on the one hand, the magnetization orientation speed of the magnetic tunnel junction device can be improved, and on the other hand, a relatively light and thin magnetic tunnel junction device can be obtained.

The two-dimensional insulating material layer includes one of two-dimensional boron nitride, fluorinated graphene and graphene oxide. The tunnel isolation top layer 208 can effectively isolate the subsequent second metal transition layer and the free magnetic layer, so that there is no interface state between the free magnetic layer and the second metal transition layer, so as to ensure good ferromagnetic properties of the free magnetic layer. Conduction is conducted between the second metal transition layer and the free magnetic layer through the tunneling effect of electrons. When the tunnel isolation top layer 208 is thin enough, for example, the tunnel isolation top layer 208 can be 1 atomic layer, the probability of electron tunneling becomes sufficiently large, and the tunnel isolation top layer 208 exhibits a small series resistance.

As shown in FIG. 6 and FIG. 11 , step 6) S16 is performed to form a second metal transition layer 206 on the tunnel isolation top layer 208 .

As shown in FIG. 7 and FIG. 11 , then step 7) S17 is performed to form a second metal connection layer 207 on the second metal transition layer 206 .

For example, the material of the second metal connection layer 207 may be one of W, Cu and Al.

As shown in FIG. 8 and FIG. 11 , step 8) is finally performed by patterning and etching the second metal connection layer 207 , the second metal transition layer 206 , the tunnel isolation top layer 208 , the free magnetic layer 205 , the tunnel layer 204 , The magnetic layer 203 , the first metal transition layer 202 and the first metal connection layer 201 are fixed to form a magnetic tunnel junction device with a column structure.

For example, the shape of the magnetic tunnel junction device includes a cylindrical structure, and the diameter of the cylindrical structure ranges from 10 nm to 200 nm.

As shown in FIG. 9 , this embodiment further provides a magnetic tunnel junction device, including: a first metal connection layer 201 , the first metal connection layer 201 is formed on a CMOS circuit substrate 10 , the first metal connection layer 201 is The connection layer 201 is connected to the drain of the MOS transistor of the CMOS circuit; the first metal transition layer 202 is formed on the first metal connection layer 201 ; the fixed magnetic layer 203 is formed on the first metal transition layer 202 The tunneling layer 204 is formed on the fixed magnetic layer 203; the free magnetic layer 205 is formed on the tunneling layer 204, and the free magnetic layer 205 is a two-dimensional ferromagnetic material layer; the second metal transition layer 206 , formed on the free magnetic layer 205 ; a second metal connection layer 207 , formed on the second metal transition layer 206 .

For example, the first metal transition layer 202 has a flat surface, the fixed magnetic layer 203 is closely combined with the first metal transition layer 202 , and the Fermi level of the first metal transition layer 202 is the same as the fixed magnetic layer 202 . The Fermi levels of the layers 203 are equal or similar, so as to reduce the contact resistance between the fixed magnetic layer 203 and the first metal transition layer 202 .

In this embodiment, the CMOS circuit substrate 10 may be a CMOS circuit layer 102 based on an SOI substrate 101 and a planarized dielectric layer 103 covering the CMOS circuit layer 102 , and is not limited to the examples listed here.

For example, the shape of the magnetic tunnel junction device includes a cylindrical structure, and the diameter of the cylindrical structure ranges from 10 nm to 200 nm.

For example, the material of the fixed magnetic layer 203 includes one of CoFeB, an elemental ferromagnetic material and an alloyed ferromagnetic material, and the material of the free magnetic layer 205 includes one of CrGeTe ₃ and CrI ₃ . The free magnetic layer of the present invention is a two-dimensional ferromagnetic material layer, and its thickness is relatively thin, on the one hand, the magnetization orientation speed of the magnetic tunnel junction device can be improved, and on the other hand, a relatively light and thin magnetic tunnel junction device can be obtained.

In this embodiment, a tunnel isolation top layer 208 is further included between the free magnetic layer 205 and the second metal transition layer 206 , and the tunnel isolation top layer 208 is a two-dimensional insulating material layer with a single crystal structure, The two-dimensional insulating material layer includes one of two-dimensional boron nitride, fluorinated graphene and graphene oxide. The tunnel isolation top layer 208 can effectively isolate the subsequent second metal transition layer and the free magnetic layer, so that there is no interface state between the free magnetic layer and the second metal transition layer, so as to ensure good ferromagnetic properties of the free magnetic layer. Conduction is conducted between the second metal transition layer and the free magnetic layer through the tunneling effect of electrons. When the tunnel isolation top layer 208 is thin enough, for example, the tunnel isolation top layer 208 can be 1 atomic layer, the probability of electron tunneling becomes sufficiently large, and the tunnel isolation top layer 208 exhibits a small series resistance.

Example 2

As shown in FIGS. 1 to 11 , this embodiment provides a method for fabricating a magnetic tunnel junction device, the basic steps of which are the same as those in Embodiment 1, wherein the difference from Embodiment 1 is that the tunneling layer 204 It is a two-dimensional insulating material layer with a single crystal structure, as shown in FIG. 9 . For example, the two-dimensional insulating material layer includes one of two-dimensional boron nitride, fluorinated graphene, and graphene oxide. In this embodiment, the free magnetic layer 205 is fabricated by using an atomic layer deposition process, a chemical vapor deposition process, or a thin film lift-off-transfer process. The tunneling layer 204 in this embodiment can be a two-dimensional insulating material layer with a very thin thickness. The tunneling layer 204 The consistency is very good, which can greatly improve the tunneling probability while ensuring the quality and function of the tunneling layer 204 .

As shown in FIG. 8 to FIG. 10 , the present embodiment further provides a magnetic tunnel junction device, wherein the basic structure of the magnetic tunnel junction device is the same as that of Embodiment 1, and the difference from Embodiment 1 is that , the tunneling layer 204 is a two-dimensional insulating material layer with a single crystal structure, as shown in FIG. 9 . For example, the two-dimensional insulating material layer includes one of two-dimensional boron nitride, fluorinated graphene, and graphene oxide. The tunneling layer 204 in this embodiment is selected as a two-dimensional insulating material layer with a very thin thickness. The consistency of the tunneling layer 204 is very good, which can greatly improve the tunneling probability while ensuring the quality and function of the tunneling layer 204 .

As described above, the magnetic tunnel junction device and the fabrication method thereof of the present invention have the following beneficial effects:

In the present invention, after the tunneling layer is fabricated, the atomic layer deposition process, the chemical vapor deposition process or the thin film stripping-transfer process is used to make the free magnetic layer. Compared with the sputtering process, the tunneling layer can be prevented from being sputtered by particles. damage and improve the quality of the tunneling layer.

By adopting atomic layer deposition process, chemical vapor deposition process or thin film stripping-transfer process to make the free magnetic layer, the tunneling layer of the present invention can be selected as a two-dimensional insulating material layer with a very thin thickness, the consistency of the tunneling layer is very good, and it can be While ensuring the quality and function of the tunneling layer, the tunneling probability is greatly improved.

The free magnetic layer of the present invention is a two-dimensional ferromagnetic material layer, and its thickness is relatively thin, on the one hand, the magnetization orientation speed of the magnetic tunnel junction device can be improved, and on the other hand, a relatively light and thin magnetic tunnel junction device can be obtained.

The invention can directly prepare the magnetic tunnel junction device on the traditional silicon-based CMOS circuit, thereby reducing the device preparation cost.

Therefore, the present invention effectively overcomes various shortcomings in the prior art and has high industrial utilization value.

The above-mentioned embodiments merely illustrate the principles and effects of the present invention, but are not intended to limit the present invention. Anyone skilled in the art can modify or change the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical idea disclosed in the present invention should still be covered by the claims of the present invention.

Claims (15)

1. a method for making a magnetic tunnel junction device based on a two-dimensional free magnetic layer, wherein the method for making comprises the steps: 1) forming a fixed magnetic layer on the substrate; 2) forming a tunneling layer on the fixed magnetic layer; 3) A free magnetic layer is deposited on the tunneling layer by an atomic layer deposition process, a chemical vapor deposition process or a thin film lift-off-transfer process, and the free magnetic layer is a two-dimensional ferromagnetic material layer. 2. The method for making a magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 1, wherein step 1) comprises: 1-1) Provide a CMOS circuit substrate, form a first metal connection layer on the CMOS circuit substrate and perform a planarization process on the first metal connection layer, the first metal connection layer and the CMOS circuit The drain connection of the MOS tube; 1-2) forming a first metal transition layer on the first metal connection layer; 1-3) The fixed magnetic layer is deposited on the first metal transition layer using an atomic layer deposition process, a chemical vapor deposition process or a thin film lift-off-transfer process. 3 . The method for fabricating a magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 2 , wherein the first metal transition layer has a flat surface, and the fixed magnetic layer and the first metal transition layer have a flat surface. 4 . The metal transition layer is closely combined, and the Fermi energy level of the first metal transition layer is equal to or similar to the Fermi energy level of the fixed magnetic layer, so as to reduce the contact between the fixed magnetic layer and the first metal transition layer resistance, the lattice constant of the fixed magnetic layer is similar to that of the first metal transition layer, so as to reduce the thermal mismatch and lattice mismatch between the fixed magnetic layer and the first metal transition layer. 4 . The method for manufacturing a magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 2 , wherein the CMOS circuit substrate comprises a CMOS circuit layer based on an SOI substrate and a CMOS circuit layer covering the CMOS circuit layer. 5 . the planarized dielectric layer. 5. The method for making a magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 2, wherein step 3) further comprises: 3-1) forming a tunnel isolation top layer on the free magnetic layer, and the tunnel isolation top layer is a two-dimensional insulating material layer; 3-2) forming a second metal transition layer on the tunnel isolation top layer; 3-3) forming a second metal connection layer on the second metal transition layer; 3-4) Pattern etching the second metal connection layer, the second metal transition layer, the free magnetic layer, the tunneling layer, the fixed magnetic layer, the first metal transition layer and the first metal connection layer to form a columnar shape Structured magnetic tunnel junction devices. 6 . The method for manufacturing a magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 5 , wherein the two-dimensional insulating material layer comprises two-dimensional boron nitride, fluorinated graphene and graphite oxide. 7 . one of the alkenes. 7 . The method for fabricating a magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 1 , wherein the material of the free magnetic layer comprises one of CrGeTe ₃ and CrI ₃ . 8 . 8 . The method for manufacturing a magnetic tunneling junction device based on a two-dimensional free magnetic layer according to claim 1 , wherein the tunneling layer is a two-dimensional insulating material layer, and the two-dimensional insulating material The layer includes one of two-dimensional boron nitride, fluorinated graphene, and graphene oxide. 9. A magnetic tunnel junction device based on a two-dimensional free magnetic layer, characterized in that it comprises: a first metal connection layer, the first metal connection layer is formed on a CMOS circuit substrate, and the first metal connection layer is connected to the drain of the MOS transistor of the CMOS circuit; a first metal transition layer formed on the first metal connection layer; a fixed magnetic layer formed on the first metal transition layer; a tunneling layer formed on the fixed magnetic layer; a free magnetic layer formed on the tunneling layer, and the free magnetic layer is a two-dimensional ferromagnetic material layer; a second metal transition layer formed on the free magnetic layer; A second metal connection layer is formed on the second metal transition layer. 10 . The magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 9 , wherein the first metal transition layer has a flat surface, and the fixed magnetic layer and the first metal transition layer have a flat surface. 11 . In close combination, the Fermi energy level of the first metal transition layer is equal to or similar to the Fermi energy level of the fixed magnetic layer, so as to reduce the contact resistance between the fixed magnetic layer and the first metal transition layer, so The lattice constant of the fixed magnetic layer is close to that of the first metal transition layer, so as to reduce thermal mismatch and lattice mismatch between the fixed magnetic layer and the first metal transition layer. 11 . The magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 9 , wherein the CMOS circuit substrate comprises a CMOS circuit layer based on an SOI substrate and a planarization covering the CMOS circuit layer. 12 . the medium layer. 12. The magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 9, wherein the shape of the magnetic tunnel junction device comprises a cylindrical structure, and the diameter of the cylindrical structure ranges between Between 10nm and 200nm. 13 . The magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 9 , wherein the material of the free magnetic layer comprises one of CrGeTe ₃ and CrI ₃ . 14 . 14 . The magnetic tunneling junction device based on a two-dimensional free magnetic layer according to claim 9 , wherein the tunneling layer is a two-dimensional insulating material layer with a single crystal structure, and the two-dimensional insulating material layer comprises: 15 . One of two-dimensional boron nitride, fluorinated graphene and graphene oxide. 15 . The magnetic tunnel junction device based on a two-dimensional free magnetic layer according to claim 9 , wherein a tunnel isolation top layer is further included between the free magnetic layer and the second metal transition layer, the The tunnel isolation top layer is a two-dimensional insulating material layer with a single crystal structure, and the two-dimensional insulating material layer includes one of two-dimensional boron nitride, fluorinated graphene and graphene oxide.

Images