CN111293208A - Carrier device for infrared emitting diodes - Google Patents

Abstract

The invention relates to a carrier device for infrared emitting diodes, which mainly includes a bottom carrier, a side wall and a reflection part, the side wall is arranged and surrounds the top of the bottom carrier, and the reflection part is arranged On the inner wall of the side wall, at least one reflected light is generated, wherein the half angle of the at least one reflected light is equal to or less than 15 degrees. Therefore, the carrier device for infrared emitting diodes of the present invention can The infrared emitting diode realizes various light field configurations, so as to achieve the effect of improving the application field of the infrared emitting diode and the convenience of use.

Description

Carrier device for infrared emitting diodes

technical field

The present invention relates to a carrier device, in particular to a carrier device for infrared emitting diodes.

Background technique

Due to the advantages of power saving, fast response, long life and small size, infrared diodes are widely used in reading, communication or sensing fields, such as signal transmission, night monitoring and other applications.

A conventional infrared diode device (such as an infrared chip) is matched with a lens to form a specific light field pattern according to the application field or product, so as to meet the needs of the market.

However, since the light emitted by the infrared diode element usually has the characteristic of having a full angle between 120 and 140 degrees, a larger angle results in less light field patterns formed by the light emitted by the infrared diode element (for example, : less than laser diodes), which limits the fields and industries that infrared diode components can be applied to.

SUMMARY OF THE INVENTION

In view of the above-mentioned deficiencies of the prior art, the main purpose of the present invention is to provide a carrier device for infrared emitting diodes, so as to generate reflected light with a half angle equal to or less than 15 degrees, thereby realizing a more diverse light field Pattern configuration, thereby improving the application field of infrared emitting diodes and the convenience of use.

In order to achieve the above-mentioned purpose, the main technical means adopted by the present invention are: to provide a carrier device for infrared emitting diodes, which includes:

a bottom carrier;

a side wall positioned and surrounding the top of the bottom carrier; and

A reflecting portion is disposed on the inner wall of the side wall and generates at least one reflected light, wherein the half angle of the at least one reflected light is equal to or less than 15 degrees.

In a preferred embodiment, the carrier device further includes an electrode portion connected to the bottom of the bottom carrier and used for electrical connection with an external control circuit.

In a preferred embodiment, the material of the bottom carrier is ceramic, metal or glass fiber.

In a preferred embodiment, the material of the side wall is metal, ceramic, plastic or plastic with reflective coating.

In a preferred embodiment, the sidewalls form a reflective cavity on top of the bottom carrier.

In a preferred embodiment, a side of the reflecting portion facing the reflecting cavity is arc-shaped.

In a preferred embodiment, the radian of the circular arc is between 0.2 and 1.

In a preferred embodiment, the half angle of the reflected light is between 4 and 15 degrees.

In a preferred embodiment, the material of the reflecting portion is metal.

The carrier device of the present invention can generate reflected light with a half angle equal to or less than 15 degrees due to the reflection portion. Therefore, with the infrared emitting diodes of the carrier device of the present invention, more diverse light field pattern configurations can be realized. , effectively achieve the effect of improving the application field of infrared emitting diodes and the convenience of use.

Description of drawings

FIG. 1 is a schematic structural diagram of a carrier device according to an embodiment of the present invention;

2 is another schematic structural diagram of a carrier device according to an embodiment of the present invention;

3 is a schematic structural diagram of an infrared emitting diode device according to an embodiment of the present invention;

4 is a schematic diagram of Embodiment 1 of a light field pattern of an infrared emitting diode device according to an embodiment of the present invention;

5 is a schematic diagram of a second embodiment of a light field pattern of an infrared emitting diode device according to an embodiment of the present invention; and

6 is a schematic diagram of Embodiment 3 of a light field pattern of an infrared emitting diode device according to an embodiment of the present invention.

Reference number:

100 - Carrier device 110 - Bottom carrier

111 - Top 112 - Bottom

120 - Side Wall 121 - Top

122 - Bottom 123 - Reflector

130——Reflection part 140——Electrode part

200 - Infrared diode element 300 - Lens

1000 - Infrared emitting diode device

Detailed ways

In order to fully understand the purpose, features and effects of the present invention, the present invention is described in detail by the following specific embodiments and in conjunction with the accompanying drawings, and is described as follows:

Regarding the preferred embodiment of the carrier device for infrared emitting diodes of the present invention, as shown in FIG. 1 , the carrier device 100 includes a bottom carrier 110 , a sidewall 120 , a reflection portion 130 and an electrode portion 140 , wherein , the carrier device 100 is used for carrying an infrared emitting diode element and an optical element.

The bottom carrier 110 has a top portion 111 and a bottom portion 112. The top portion 111 is used to carry the sidewall 120, the reflection portion 130 and the infrared emitting diode element (not shown), and the bottom portion 112 is connected to the electrode portion 140. Therefore, the above The infrared emitting diode element can be electrically connected to the electrode portion 140 through the bottom carrier 110 to receive a control signal provided by an external control circuit (eg, a driving circuit).

The sidewall 120 has a top portion 121 and a bottom portion 122 . The bottom portion 122 surrounds and connects to the top portion 111 of the bottom carrier 110 and forms a reflection cavity 123 with the top portion 111 of the bottom carrier 110 .

The reflection part 130 is disposed on the inner wall of the side wall 120 and connected to the inner wall of the side wall 120 . The reflection part 130 is used for reflecting the light emitted by the infrared emitting diode element to generate corresponding reflected light, wherein the half angle of the reflected light is equal to or less than 15 degrees.

Thus, the infrared emitting diode element can receive the control signal through the carrier device 100 and emit light accordingly, and the carrier device 100 can adjust the light emitted by the infrared emitting diode element to a half angle equal to or The reflected light of less than 15 degrees increases the adjustable range of the reflected light, so more diverse light field pattern configurations can be realized, so that the carrier device 100 can be applied to different market demands, effectively improving the application field and the convenience of use effect.

In this preferred embodiment, the half angle of the reflected light is preferably between 4 and 15 degrees.

In this preferred embodiment, the material of the bottom carrier 110 is ceramic (alumina, aluminum nitride, etc.), metal (copper, nickel, palladium, gold, etc.) or glass fiber (FR-4, G10, etc.), and the present The invention is not limited by this.

In this preferred embodiment, the bottom carrier 110 may be coated with a metal material.

In this preferred embodiment, the infrared emitting diode element can be electrically connected to the electrode portion 140 through the metal material coated on the bottom carrier 110; in other embodiments, the infrared emitting diode element can be The conductive vias (not shown) of the bottom carrier 110 are electrically connected to the electrode portion 140, and the present invention is not limited thereto.

In this preferred embodiment, the material of the sidewall 120 is metal, ceramic, plastic (eg: PPA resin, LEP, etc.) or plastic with a reflective coating, the material of the reflective coating can be metal, and the present invention Not limited by this.

In this preferred embodiment, as the reflection part 130 is closer to the top 111 of the bottom carrier 110, the thickness of the reflection part 130 is thicker, and the side of the reflection part 130 facing the reflection cavity 123 is arc-shaped, so that the reflection cavity 123 is about bowl shape.

In this preferred embodiment, the radian of the arc shape is between 0.2 and 1, that is, the angle is between 11.5 degrees and 57.3 degrees.

In a preferred embodiment, the radian of the circular arc is 0.24, that is, the angle is 14 degrees; in another preferred embodiment, the radian of the circular arc is 0.97, that is, the angle is 56 degrees.

In this preferred embodiment, the material of the reflecting portion 130 is metal (gold, silver, etc.), and the present invention is not limited thereto.

In this preferred embodiment, the bottom carrier 110 , the sidewalls 120 and the reflecting portion 130 can be adhered and fixed to each other by an adhesive, and the present invention is not limited thereto.

In one embodiment, the bottom carrier 110 , the sidewalls 120 and the reflection part 130 can be integrally formed (as shown in FIG. 2 ). Therefore, in this embodiment, the bottom carrier 110 , the sidewalls 120 and the reflection part 130 are the same material.

In this preferred embodiment, the bottom carrier 110 may be one of a circle, an ellipse, a quadrilateral or a polygon, and the side wall 120 corresponds to the bottom carrier 110 to form a circular, oval, quadrilateral or polygonal opening, and The present invention is not limited by this.

The dimension of the opening can be length, width, area, diameter or major axis according to the implementation form of the opening (circle, ellipse, quadrangle or polygon), and the present invention is not limited thereto.

3 is a preferred embodiment of the carrier device 100 of the present invention for implementing an infrared emitting diode device. The infrared emitting diode device 1000 includes a carrier device 100, an infrared diode element 200 (such as an infrared chip), and A lens 300.

The carrier device 100 is used for accommodating and carrying the infrared diode element 200. For example, the infrared diode element 200 is located in the reflective cavity 123 and is arranged on the top 111 of the bottom carrier 110, wherein the infrared diode element 200 is used according to the The received control signal emits light. At the same time, the carrier device 100 is also used to carry the lens 300. For example, the lens 300 is used as the aforementioned optical element and is also disposed on the top 121 of the sidewall 120, wherein the lens 300 is used to change the light field of the received light.

Therefore, the light emitted by the infrared diode element 200 can be reflected by the reflection part 130 to generate reflected light with a half angle equal to or less than 15 degrees (preferably between 4 and 15 half angles) and reflected toward the direction of the lens 300 , after the reflected light passes through the lens 300, a light beam with a half angle of 4 degrees to 70 degrees can be generated. Since the reflected light has a wide adjustment range, for example, the adjustment range of the infrared emitting diode device 1000 of the present invention can be 4 degrees to 70 degrees, while the adjustment range of the well-known infrared emitting diode device is 120 degrees to 120 degrees. Therefore, the infrared emitting diode device 1000 of the present invention can realize the light field pattern that cannot be realized by the well-known infrared emitting diode device, as shown in FIGS. Example 1 is a schematic diagram; FIG. 5 is a schematic diagram of a second embodiment of a light field pattern; FIG. 6 is a schematic diagram of a third embodiment of the light field pattern of grating light. Therefore, the infrared emitting diode device 1000 of the present invention can realize a variety of light field pattern configurations, effectively To achieve the effect of improving the application field and the convenience of use.

For example, since the infrared emitting diode device 1000 of the carrier device 100 of the present invention can generate light with a half angle between 4 degrees and 70 degrees, it is possible to realize a laser diode device (for example, a vertical resonant cavity) The light field pattern realized by surface emitting laser), that is, the infrared emitting diode device 1000 using the carrier device 100 of the present invention can be used to replace the existing laser diode device. In addition, since the cost of infrared emitting diodes is lower than that of laser diodes, in addition, the lens 300 of the present invention can be realized by existing lens products, and infrared light will not cause damage to human eyes like laser light. The accidental detachment of the lens will not harm human eyes. Therefore, the infrared emitting diode device 1000 using the carrier device 100 of the present invention can not only be used in the field of depth sensing (or stereo image sensing) such as face recognition, but also in the field of depth sensing (or stereo image sensing). The laser diode device also has the effects of reducing cost and improving safety in use.

In this preferred embodiment, the lens 300 is a diffractive optical element (DOE) or a microlens (Microlens), and the present invention is not limited thereto.

In this preferred embodiment, since the half angle of the reflected light is equal to or less than 15 degrees, the lens 300 can adjust the light field of the reflected light, and generate geometric light (eg, grating light, complex point light, etc.) Light field pattern (shown in Figures 4 to 6).

In this preferred embodiment, the lens 400 and the top 121 of the sidewall 120 can be fixed by adhesive (thermoplastic adhesive, thermosetting adhesive), and the invention is not limited thereto.

To sum up, since the carrier device 100 of the present invention can generate reflected light with a half angle equal to or less than 15 degrees, more diverse light field pattern configurations can be realized, which effectively improves the application field and convenience of infrared emitting diodes effect.

The present invention has been disclosed above with preferred embodiments, however, those skilled in the art should understand that the embodiments are only used to describe the present invention, and should not be construed as limiting the scope of the present invention. It should be noted that all changes and substitutions equivalent to this embodiment should be set to be included within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the defined scope of the patent application.

Claims (9)

1. A carrier device for an infrared emitting diode, comprising:

a bottom carrier;

a side wall disposed around the top of the bottom carrier; and

the reflecting part is arranged on the inner wall of the side wall and generates at least one reflected light, wherein the half angle of the at least one reflected light is equal to or less than 15 degrees.

2. The carrier device of claim 1 further comprising an electrode portion coupled to the bottom of the bottom carrier for electrical connection to an external control circuit.

3. The carrier device according to claim 1, wherein the material of the bottom carrier is ceramic, metal or glass fiber.

4. The carrier device according to claim 1, wherein the material of the side walls is metal, ceramic, plastic or plastic with a reflective coating.

5. The carrier device of claim 1 wherein the sidewall forms a reflective cavity at the top of the bottom carrier.

6. The carrier device according to claim 1, characterized in that the side of the reflective portion facing the reflective cavity is rounded.

7. The carrier device of claim 6 wherein the arc is between 0.2 and 1.

8. The carrier device of claim 1 wherein the half angle of the reflected light is between 4 and 15 degrees.

9. The carrier device of claim 1 wherein the material of the reflective portion is a metal.

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