CN111261554A - Cleaning device and method - Google Patents
Cleaning device and method Download PDFInfo
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- CN111261554A CN111261554A CN202010060403.0A CN202010060403A CN111261554A CN 111261554 A CN111261554 A CN 111261554A CN 202010060403 A CN202010060403 A CN 202010060403A CN 111261554 A CN111261554 A CN 111261554A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02041—Cleaning
- H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
- H01L21/02046—Dry cleaning only
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Abstract
The embodiment of the invention provides a cleaning device and a method, wherein a semiconductor structure to be cleaned is arranged on a loading table of the cleaning device when cleaning is carried out; the semiconductor structure to be cleaned at least contains oxidizing impurities; heating the temperature of a furnace tube reaction cavity of the cleaning device to a first temperature by using a heater of the cleaning device; ionizing the reductive first gas in a plasma generator of the cleaning device; under the first temperature condition, the first gas after ionization treatment is used for removing the oxidizing impurities in the furnace tube reaction cavity.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a cleaning device and a cleaning method.
Background
In the manufacturing process of the memory, before some processes, such as epitaxial growth of an epitaxial layer, are performed, a pre-cleaning treatment needs to be performed on the position where the processes are to be performed, so as to avoid some oxidizing impurities from influencing the performance of the processes, thereby obtaining high-quality process execution results. In the related art, in generalBy using reducing gases, e.g. hydrogen H2) The high-temperature annealing step (i.e. the wafer is placed in a high-temperature furnace tube reaction cavity, and the wafer is subjected to reaction by utilizing reducing gas and oxidizing impurities) and the wet cleaning step are combined to execute pre-cleaning, so that the aim of removing the oxidizing impurities is fulfilled.
However, in the related art, when the oxidizing impurities are removed by the reducing gas high-temperature annealing step, the heating temperature of the wafer is too high, and thus, the wafer is adversely affected, for example, the drift of the electrical parameters of the wafer is affected or the wafer is severely deformed.
Disclosure of Invention
In order to solve the related technical problems, embodiments of the present invention provide a cleaning apparatus and a cleaning method, which can reduce a temperature for heating a wafer when removing an oxidizing impurity in a reducing gas high-temperature annealing step, and avoid adverse effects on the wafer due to an excessively high temperature.
An embodiment of the present invention provides a cleaning apparatus, including: the device comprises a loading platform, a heater, a plasma generator and a furnace tube reaction cavity; wherein:
when cleaning is carried out, the semiconductor structure to be cleaned is arranged on the loading platform; the semiconductor structure to be cleaned at least contains oxidizing impurities;
the heater is used for heating the temperature of the furnace tube reaction cavity to a first temperature;
a plasma generator for ionizing a reductive first gas;
and under the first temperature condition, removing the oxidative impurities in the furnace tube reaction chamber by using the ionized first gas.
In the above aspect, the first gas comprises H2；
The plasma generator is particularly used for generating H2Conversion into free radicals H and hydrogen ions H+；
Under the first temperature condition, the H and H are utilized+Removing the oxidizing impurities is performed in the furnace tube reaction chamber.
In the above scheme, the plasma generator comprises a remote plasma generator.
In the above scheme, the apparatus further comprises: a gas inlet from which the first gas is passed into the plasma generator.
In the above scheme, the apparatus further comprises:
a gas injection conduit; an input port of the gas injection pipeline is connected with an output port of the plasma generator, and an output port of the gas injection pipeline is connected with the furnace tube reaction cavity; and the ionized first gas is transmitted to the furnace tube reaction cavity through the gas injection pipeline.
In the above scheme, the gas injection pipeline comprises a plurality of output ports; and the ionized first gas is shunted through the plurality of output ports and enters the furnace tube reaction cavity.
In the above scheme, the apparatus further includes a gas outlet, and the gas obtained after the reaction between the ionized first gas and the oxidizing impurities is discharged from the furnace tube reaction chamber through the gas outlet.
In the above scheme, the device further comprises a pump; and when the pump pumps air, the ionized first gas and the gas after the reaction of the oxidizing impurities are discharged from the furnace tube reaction cavity through the air outlet.
The embodiment of the invention also provides a cleaning method, which comprises the following steps:
when cleaning, arranging a semiconductor structure to be cleaned on a loading table of the cleaning device; the semiconductor structure to be cleaned at least contains oxidizing impurities;
heating the temperature of a furnace tube reaction cavity of the cleaning device to a first temperature by using a heater of the cleaning device;
ionizing the reductive first gas in a plasma generator of the cleaning device;
under the first temperature condition, the first gas after ionization treatment is used for removing the oxidizing impurities in the furnace tube reaction cavity.
In the above aspect, the first gas comprises H2；
When a first reducing gas is ionized in a plasma generator of the cleaning device, the method comprises the following steps:
in the plasma generator of the cleaning device, H2Conversion into H.and H+；
When the ionized first gas is used for removing the oxidizing impurities in the furnace tube reaction chamber under the first temperature condition, the method comprises the following steps:
under the first temperature condition, the H and H are utilized+And removing the oxidizing impurities in the furnace tube reaction cavity.
According to the cleaning device and the method provided by the embodiment of the invention, when cleaning is carried out, the semiconductor structure to be cleaned is arranged on the loading platform of the cleaning device; the semiconductor structure to be cleaned at least contains oxidizing impurities; heating the temperature of a furnace tube reaction cavity of the cleaning device to a first temperature by using a heater of the cleaning device; ionizing the reductive first gas in a plasma generator of the cleaning device; under the first temperature condition, the first gas after ionization treatment is used for removing the oxidizing impurities in the furnace tube reaction cavity. In the embodiment of the invention, for the semiconductor structure containing the oxidizing impurities, the reducing gas is ionized in the plasma generator, and the ionized reducing gas is reacted with the oxidizing impurities to remove the oxidizing impurities. Because the reaction activity of the ionized reducing gas is higher, the temperature required by the ionized reducing gas when the ionized reducing gas reacts with the oxidizing impurities does not need to be too high, namely the heating temperature of the wafer does not need to be too high.
Drawings
FIG. 1a is a schematic view of an epitaxial growth process of a memory and a process before the epitaxial growth process is performed in the related art;
FIG. 1b is a schematic diagram showing the existence of some oxidizing impurities on the surface of a recess region for performing epitaxial growth of a memory in the related art;
FIG. 1c is a schematic diagram illustrating a related art method for removing oxidizing impurities from the surface of a recess region for epitaxial growth of a memory;
FIG. 2 is a schematic cross-sectional view of a cleaning apparatus according to the related art;
FIG. 3 is a schematic structural diagram of a cleaning apparatus according to an embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a cleaning apparatus according to an embodiment of the present invention;
fig. 5 is a schematic flow chart illustrating an implementation of the cleaning method according to the embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the following describes specific technical solutions of the present invention in further detail with reference to the accompanying drawings in the embodiments of the present invention.
The cleaning device and the method provided by the embodiment of the invention are not only suitable for pretreatment before epitaxial growth of the epitaxial layer in the memory, but also suitable for other pretreatment before process execution, wherein the pretreatment needs to repair damage generated by the previous process, and more importantly, the pretreatment is used for removing some oxidative impurities generated by the previous process. Hereinafter, only the pretreatment before the epitaxial growth of the epitaxial layer is performed will be described as an example.
In the related art, during the manufacturing process of the memory, it is generally required to epitaxially grow an epitaxial layer with higher purity on a substrate, and a specific epitaxial growth process and a process before the epitaxial growth process are generally performed include the following steps:
step a: as shown in fig. 1a, a stacked structure 120 is formed on a surface of a substrate 110, and a plurality of recessed regions 130 (only one is shown in fig. 1 a) are formed in the stacked structure 120 and extend through the stacked structure 120 to the surface of the substrate 110;
in practice, a substrate 110 is provided, and the material of the substrate may include silicon; a plurality of first material layers 121 and second material layers 122 (the number of layers is related to the number of layers included in the memory) which are stacked in an interleaved manner are formed on the surface of the substrate 110, wherein the first material layers 121 are Oxide layers, and the second material layers 122 are Nitride layers; coating photoresist on the surface of the stacked structure 120, and developing to remove the photoresist to form a mask layer (not shown in fig. 1 a); the stacked structure and the substrate are plasma etched to form a plurality of recessed regions 130 extending through the stacked structure 120 and to the surface of the substrate 110. Here, epitaxial growth is subsequently performed at the recess region.
Step b: removing polymer residues after etching; removing the hardened photoresist of the mask layer;
in step b, although the corresponding post-process treatment has been performed, some oxidizing impurities, such as substrate impurities (e.g. O, C, N), Polymer (expressed in english as Polymer), broken crystals, native oxide layer, reactive residual gas (expressed in english as out), etc., still exist on the bottom surface of the processed recess region, and these oxidizing impurities can hinder the growth of the epitaxial layer. Meanwhile, in the plasma etching process, the bombardment force of plasma (expressed as Ion in english) to the bottom of the recessed region is large, so that the bottom of the recessed region is easily damaged, such as lattice defects.
Therefore, in order to obtain a high-quality epitaxial layer (here, a high-quality epitaxial layer means that the epitaxial layer has high uniformity and no voids or leakage in the epitaxial layer), it is necessary to perform oxidative impurity removal treatment and repair damage to the bottom surface of the recess region.
Step c: placing the semiconductor structure (also called wafer) processed by the above steps in a furnace reaction chamber at a second temperature, and introducing a reducing gas such as H2The reducing gas reacts with the oxidizing impurities to remove the oxidizing impurities and repair the damage.
In practical applications, step c is specifically implemented by using the cleaning apparatus shown in fig. 2, and as shown in fig. 2, the semiconductor structure to be cleaned is arranged on a loading platform of the cleaning apparatus during cleaning; heating the temperature of the furnace tube reaction chamber of the cleaning device to a second temperature by using a heater (not shown in FIG. 2) of the cleaning device; and under the second temperature condition, removing oxidizing impurities in the furnace tube reaction cavity by using reducing gas, and completing damage repair under the second temperature condition. Here, the second temperature may be a temperature at which the reducing gas is activated to react the reducing gas with the oxidizing impurities, such as when the reducing gas is H2And the second temperature is 900-1000 ℃.
Step d: using sulfuric acid (H)2SO4) And hydrogen peroxide (H)2O2) The mixed solution of (a) is subjected to wet cleaning to further remove residual oxidizing impurity reactions, and the recessed regions after cleaning are shown in fig. 1 c.
Step e: and performing silicon epitaxial growth on the recessed area to form an epitaxial layer 140.
Although a better cleaning effect can be achieved by utilizing the reductive gas high-temperature annealing and wet cleaning technology, with the increase of the number of stacked layers in the stacked structure, the energy required by plasma etching is larger and larger, the oxidative impurities are increased, the damage is more serious, and thus, the requirements for removing the oxidative impurities and repairing the damage are higher and higher. In the related art, in order to improve the capability of removing the oxidative impurities and repairing the damage, the temperature of the reaction chamber of the furnace tube is increased (further increasing the activity of the reducing gas) and the reaction time is increased. Increasing the temperature of the furnace reaction chamber can cause the wafer heating temperature to be too high, which can cause a series of adverse effects, including:
1. doping treatment is often performed in the process before cleaning, and the diffusion of doping ions is increased when the heating temperature of the wafer is too high, so that the drift of electrical parameters is influenced;
2. too high wafer heating temperature causes a greater degree of shrinkage of the stacked structure, which leads to an increase in wafer Bow (which may be expressed as Bow), i.e., a severe deformation of the wafer, and may cause the subsequent processes to be performed abnormally.
In addition, the increased reaction time period seriously decreases the efficiency of the washing process, thereby decreasing the production efficiency (WPH, Wafer Per Hour).
In view of this, in various embodiments of the present invention, a reducing gas is ionized in a plasma generator for a semiconductor structure containing an oxidizing impurity, and the ionized reducing gas is reacted with the oxidizing impurity to remove the oxidizing impurity. Because the reaction activity of the ionized reducing gas is higher, the temperature required by the ionized reducing gas when the ionized reducing gas reacts with the oxidizing impurities does not need to be too high, namely the heating temperature of the wafer does not need to be too high.
Fig. 3 is a view showing a structural composition of a cleaning apparatus according to an embodiment of the present invention, and a cleaning apparatus 300 according to an embodiment of the present invention includes: a loading platform 301, a heater 302, a plasma generator 303 and a furnace tube reaction cavity 304; wherein:
when cleaning, a semiconductor structure to be cleaned is arranged on the loading platform 301; the semiconductor structure to be cleaned at least contains oxidizing impurities;
the heater 302 is configured to heat the furnace tube reaction chamber 304 to a first temperature;
a plasma generator 303 for ionizing the reductive first gas;
under the first temperature condition, the ionized first gas is used to remove the oxidizing impurities in the furnace tube reaction chamber 304.
Reference will now be made in detail to a cross-sectional view (fig. 4) of a particular cleaning apparatus in accordance with an illustrative embodiment of the invention.
Here, the oxidizing impurity is an oxidizing impurity generated during a process of manufacturing a semiconductor structure. In practice, the oxidizing impurities may be one or more of substrate impurities (e.g. O, C, N), polymers, crushed crystals, native oxide layers, and reaction residual gases.
The loading platform 301 is disposed in the furnace reaction chamber 304, and the loading platform 301 is mainly used for loading components of a wafer (semiconductor structure) during a cleaning process. In practice, the loading platform 301 may have a multi-layer structure for loading multiple wafers at the same time, for example, the loading platform 301 may load 25 wafers at a time.
In practical applications, the material of the loading platform 301 may be a heat-resistant material, such as amorphous quartz. Thus, the loading table may also be referred to as a quartz boat.
The heater 302 is disposed around the furnace tube reaction chamber 304 and is used for heating the furnace tube reaction chamber 304. Here, the first temperature may be a temperature range in which the ionized first gas can be activated to react with the oxidative impurities to remove the oxidative impurities. Here, since the first gas after the ionization treatment itself has high activity, the activation temperature required for the first gas after the ionization treatment to react with the oxidizing impurities is lower than the temperature required for the first gas after the reduction treatment to react with the oxidizing impurities, that is, the first temperature is lower than the second temperature. In practical applications, at the first temperature, repair of possible damage in the semiconductor structure, such as lattice defects, may still be achieved.
In practical applications, the heater 302 may include a temperature detecting component, a controller, and a heating component; wherein: the temperature detection component is used for detecting the temperature in the furnace tube reaction cavity 304, and the controller is used for generating a first instruction when the temperature in the furnace tube reaction cavity 304 is smaller than a first threshold value; the cooling component is configured to heat the furnace reaction chamber 304 in response to the first command. Here, the first threshold value is a temperature that is made based on a first temperature, and is generally lower than the first temperature because of hysteresis in temperature control. The first instruction is an instruction instructing the heating member to start heating. Specifically, the temperature detection means may be a temperature measurement sensor such as a thermocouple or the like; the Controller can be various chips with control functions, such as a microcontroller (MCU, Micro Controller Unit) and the like; the heating element may be a metal resistance wire wound outside the furnace reaction chamber 304.
In practical applications, the temperature of the furnace reaction chamber 304 can be stabilized at the first temperature by the heating effect of the heater 302. In practical application, when the first gas is different, the temperature at which the ionized first gas is activated is also different, and in specific implementation, the specific value of the first temperature can be adjusted according to actual conditions.
Here, the radical is also referred to as a "radical" chemically, and refers to an atom or a group having an unpaired electron formed by uniformly cleaving a covalent bond of a molecule of a compound under an external condition such as photothermal. When the covalent bond is nonuniformly cleaved, the common electron pair between the two atoms is completely transferred to one of the atoms, with the result that positively and negatively charged ions are formed (this cleavage mode is referred to as heterolysis of the bond). The reactivity of the radicals is particularly high. Therefore, the plasma generator 303 converts the reductive first gas into the ionized gas, so as to greatly improve the reactivity, thereby improving the capability of the cleaning device 300 for removing the oxidative impurities, and further, the capability of the cleaning device 300 for removing the oxidative impurities does not need to be improved by raising the temperature.
In practice, the reducing first gas often used contains H2。
Based on this, in one embodiment, the first gas comprises H2；
The plasma generator 303 is particularly adapted for generating H2Conversion into H.and H+；
Under the first temperature condition, the H and H are utilized+The removal of the oxidizing impurities is performed in the furnace tube reaction chamber 304. Here, when the first gas contains H2When the temperature is higher than the first temperature, the first temperature can be 700 DEG C～800℃。
In practical applications, the function of the plasma generator 303 can be realized by a direct current arc discharge method, a communication power frequency discharge method, a high frequency induction discharge method, a low pressure discharge method (e.g., a glow discharge method), and the like. In the related art, the technology of the plasma generator is well developed, and is not described herein.
In practical applications, the plasma generator 303 is disposed outside the furnace reaction chamber 304, and during cleaning, the ionized first gas needs to be continuously supplied, so the energy supplied by the plasma generator 303 must be greater than the energy lost by the plasma during the transmission process.
Based on this, in one embodiment, the plasma generator 303 comprises a remote plasma generator.
Here, the remote plasma generator can accommodate energy losses in transferring the ionized first gas from outside the furnace reaction chamber 304 into the furnace reaction chamber 304, thereby ensuring a proper supply of the ionized first gas during the cleaning process.
The photoresist stripping chamber 304 provides a place for removing the oxidizing impurities by reacting the ionized first gas with the oxidizing impurities.
In practice, the material of the furnace reaction chamber 304 may be a heat-resistant material, such as amorphous quartz.
In one embodiment, the apparatus 300 further comprises: a gas inlet from which the first gas is passed into the plasma generator 303.
In practice, a valve is disposed between the gas inlet and the first gas supply device, and when the valve is opened, the first gas enters the plasma generator 303 through the gas inlet. Here, in practical use, when the first gas is H2In this case, the first gas providing device may be H2Gas cylinders or H2Generating the device.
In one embodiment, the apparatus 300 further comprises: a gas injection conduit; an input port of the gas injection pipeline is connected with an output port of the plasma generator 303, and an output port of the gas injection pipeline is connected with the furnace tube reaction cavity 304; the ionized first gas is transmitted to the furnace reaction chamber 304 through the gas injection pipeline.
In practical applications, in order to make the ionized first gas contact the wafer more fully, a plurality of split-flow outlets are disposed at different height positions in the furnace reaction chamber 304.
In one embodiment, the apparatus 300 further comprises: the gas injection conduit comprises a plurality of outlets; the ionized first gas is distributed through the plurality of outlets and enters the furnace tube reaction chamber 304.
In practical applications, as shown in fig. 4, the inlet of the gas injection pipeline is connected to the output port of the plasma generator 303, the gas injection pipeline includes a plurality of branch pipelines, each branch pipeline includes a plurality of outlets, and each branch pipeline can reach different height positions in the furnace tube reaction chamber 304. In this way, it is ensured that the ionized first gas is output from multiple layers, so that the wafer in the loading platform 301 is in faster, more uniform and more sufficient contact with the ionized first gas.
In practical application, the gas injection pipeline is made of high-temperature resistant material.
In one embodiment, the apparatus 300 further comprises: and the gas after the ionized treatment of the first gas and the oxidizing impurities react is discharged from the furnace tube reaction cavity 304 through the gas outlet.
In practical application, as shown in fig. 4, the gas outlet is disposed on the furnace tube reaction chamber 304.
In one embodiment, the device 300 further comprises a pump; when the pump is pumped, the gas after the reaction between the ionized first gas and the oxidizing impurities is discharged from the furnace tube reaction chamber 304 through the gas outlet.
In practical application, as shown in fig. 4, the pump is disposed outside the furnace tube reaction chamber 304 and near the gas outlet, and the pump can be disposed outside the furnace tube reaction chamberCapable of reacting free radicals H and H+The gas resulting from the reaction of the ions with the oxidizing impurities is pumped from the furnace tube reaction chamber 304.
It should be noted that the air inlet and the air outlet are generally respectively disposed at two ends of the furnace tube reaction chamber 304, as shown in fig. 4, the air inlet is located at the right side of the furnace tube reaction chamber 304 (looking at the direction of the cross section of the cleaning device 300), and the air outlet is located at the left side of the furnace tube reaction chamber 304 (looking at the direction of the cross section of the cleaning device 300).
An embodiment of the present invention provides a cleaning apparatus, including: the device comprises a loading platform, a heater, a plasma generator and a furnace tube reaction cavity; wherein: when cleaning is carried out, the semiconductor structure to be cleaned is arranged on the loading platform; the semiconductor structure to be cleaned at least contains oxidizing impurities; the heater is used for heating the temperature of the furnace tube reaction cavity to a first temperature; a plasma generator for ionizing a reductive first gas; and under the first temperature condition, removing the oxidative impurities in the furnace tube reaction chamber by using the ionized first gas. In the embodiment of the invention, for the semiconductor structure containing the oxidizing impurities, the reducing gas is ionized in the plasma generator, and the ionized reducing gas is reacted with the oxidizing impurities to remove the oxidizing impurities. Because the reaction activity of the ionized reducing gas is higher, the temperature required by the ionized reducing gas when the ionized reducing gas reacts with the oxidizing impurities does not need to be too high, namely the heating temperature of the wafer does not need to be too high, therefore, in the embodiment of the invention, when the oxidizing impurities are removed by utilizing the high-temperature annealing step of the reducing gas, the wafer does not need to be heated to the too high temperature, so that the adverse effect on the wafer caused by the too high temperature is avoided, namely the diffusion of the doping ions of the silicon substrate can be reduced by the reduction of the heating temperature and the action time of the wafer, and the electrical property is converged and stable; meanwhile, the shrinkage degree of the stacking structure can be greatly reduced due to the reduction of the heating temperature of the wafer, so that the curvature of the wafer is smaller, and the development requirement of products with higher quality can be met.
In addition, since the ionized reducing gas greatly increases the ability to remove the oxidative impurities compared to the reducing gas of the related art, it is possible to use H in comparison with the related art2The scheme of oxidizing impurities can also reduce the time of high-temperature action on the wafer, so that the cleaning treatment efficiency is improved, and the WPH is improved.
Based on the above apparatus, an embodiment of the present invention further provides a cleaning method, as shown in fig. 5, the cleaning method includes the following steps:
step 501: when cleaning, arranging a semiconductor structure to be cleaned on a loading table of the cleaning device; the semiconductor structure to be cleaned at least contains oxidizing impurities;
step 502: heating the temperature of a furnace tube reaction cavity of the cleaning device to a first temperature by using a heater of the cleaning device;
step 503: ionizing the reductive first gas in a plasma generator of the cleaning device;
step 504: under the first temperature condition, the first gas after ionization treatment is used for removing the oxidizing impurities in the furnace tube reaction cavity.
Wherein, in one embodiment, the first gas comprises hydrogen H2；
When a first reducing gas is ionized in a plasma generator of the cleaning device, the method comprises the following steps:
in the plasma generator of the cleaning device, H2Conversion into H.and H+；
When the ionized first gas is used for removing the oxidizing impurities in the furnace tube reaction chamber under the first temperature condition, the method comprises the following steps:
and under the first temperature condition, removing the oxidizing impurities in the furnace tube reaction cavity by using the ionized first gas.
In an embodiment, the plasma generator comprises a remote plasma generator.
In one embodiment, before the ionizing the first reducing gas, the method further comprises:
and introducing the first gas into the plasma generator through a gas inlet of the cleaning device.
In one embodiment, before the ionizing the first reducing gas, the method further comprises:
and transmitting the ionized first gas from the plasma generator to the furnace tube reaction chamber through a gas injection pipeline of the cleaning device.
In one embodiment, the ionized first gas is distributed to enter the furnace tube reaction chamber through a plurality of outlets of a gas injection pipeline of the cleaning device.
In one embodiment, when the ionized first gas is used to remove the oxidizing impurities in the furnace tube reaction chamber under the first temperature condition, the method further comprises:
and discharging the gas obtained after the first gas subjected to the ionization treatment and the oxidizing impurities react from the furnace tube reaction cavity by using a gas outlet of the cleaning device.
In one embodiment, the gas generated by the reaction between the ionized first gas and the oxidizing impurities is exhausted from the furnace tube reaction chamber through the gas outlet by the pumping action of the pump of the cleaning device.
It should be noted that, as will be clear to those skilled in the art, for convenience and brevity of description, the specific steps of the method described above may refer to the corresponding processes in the foregoing embodiments of the cleaning apparatus, and are not described herein again.
It should be noted that: "first," "second," and the like are used for distinguishing between similar elements and not necessarily for describing a particular sequential or chronological order.
In addition, the technical solutions described in the embodiments of the present invention may be arbitrarily combined without conflict.
The above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention.
Claims (10)
1. A cleaning device, the device comprising: the device comprises a loading platform, a heater, a plasma generator and a furnace tube reaction cavity; wherein:
when cleaning is carried out, the semiconductor structure to be cleaned is arranged on the loading platform; the semiconductor structure to be cleaned at least contains oxidizing impurities;
the heater is used for heating the temperature of the furnace tube reaction cavity to a first temperature;
a plasma generator for ionizing a reductive first gas;
and under the first temperature condition, removing the oxidative impurities in the furnace tube reaction chamber by using the ionized first gas.
2. The apparatus of claim 1, wherein the first gas comprises hydrogen H2；
The plasma generator is particularly used for generating H2Conversion into free radicals H and hydrogen ions H+；
Under the first temperature condition, the H and H are utilized+Removing the oxidizing impurities is performed in the furnace tube reaction chamber.
3. The apparatus of claim 1, wherein the plasma generator comprises a remote plasma generator.
4. The apparatus of claim 1, further comprising: a gas inlet from which the first gas is passed into the plasma generator.
5. The apparatus of claim 1, further comprising: a gas injection conduit; an input port of the gas injection pipeline is connected with an output port of the plasma generator, and an output port of the gas injection pipeline is connected with the furnace tube reaction cavity; and the ionized first gas is transmitted to the furnace tube reaction cavity through the gas injection pipeline.
6. The apparatus of claim 5, wherein the gas injection conduit comprises a plurality of output ports; and the ionized first gas is shunted through the plurality of output ports and enters the furnace tube reaction cavity.
7. The apparatus of claim 1, further comprising a gas outlet through which the ionized first gas is discharged from the furnace tube reaction chamber after reacting with the oxidizing impurities.
8. The apparatus of claim 7, further comprising a pump; and when the pump pumps air, the ionized first gas and the gas after the reaction of the oxidizing impurities are discharged from the furnace tube reaction cavity through the air outlet.
9. A method of cleaning, the method comprising:
when cleaning, arranging a semiconductor structure to be cleaned on a loading table of the cleaning device; the semiconductor structure to be cleaned at least contains oxidizing impurities;
heating the temperature of a furnace tube reaction cavity of the cleaning device to a first temperature by using a heater of the cleaning device;
ionizing the reductive first gas in a plasma generator of the cleaning device;
under the first temperature condition, the first gas after ionization treatment is used for removing the oxidizing impurities in the furnace tube reaction cavity.
10. The method of claim 9, wherein the first gas comprises H2；
When a first reducing gas is ionized in a plasma generator of the cleaning device, the method comprises the following steps:
in the plasma generator of the cleaning device, H2Conversion into H.and H+；
When the ionized first gas is used for removing the oxidizing impurities in the furnace tube reaction chamber under the first temperature condition, the method comprises the following steps:
under the first temperature condition, the H and H are utilized+And removing the oxidizing impurities in the furnace tube reaction cavity.
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| WO2023050268A1 (en) * | 2021-09-30 | 2023-04-06 | 复旦大学 | Nitride semiconductor device, and surface treatment system and method therefor |
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| CN104342632A (en) * | 2013-08-07 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning cavity and plasma machining device |
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| CN101379213A (en) * | 2006-02-10 | 2009-03-04 | 应用材料股份有限公司 | Water vapor passivation of a wall facing a plasma |
| JP2010262984A (en) * | 2009-04-30 | 2010-11-18 | Shin-Etsu Chemical Co Ltd | Method of manufacturing soi substrate having backside sandblasted |
| CN104342632A (en) * | 2013-08-07 | 2015-02-11 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Pre-cleaning cavity and plasma machining device |
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| WO2023050268A1 (en) * | 2021-09-30 | 2023-04-06 | 复旦大学 | Nitride semiconductor device, and surface treatment system and method therefor |
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