KR930011539B1 - Method for Cleaning Semiconductor Device and Its Device - Google Patents
Method for Cleaning Semiconductor Device and Its Device Download PDFInfo
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- KR930011539B1 KR930011539B1 KR1019910013223A KR910013223A KR930011539B1 KR 930011539 B1 KR930011539 B1 KR 930011539B1 KR 1019910013223 A KR1019910013223 A KR 1019910013223A KR 910013223 A KR910013223 A KR 910013223A KR 930011539 B1 KR930011539 B1 KR 930011539B1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
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- Condensed Matter Physics & Semiconductors (AREA)
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- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
내용 없음.No content.
Description
제1도는 본 발명에 따른 반도체 장치 세정을 위한 시스템의 개략적인 구성도이다.1 is a schematic structural diagram of a system for cleaning a semiconductor device according to the present invention.
본 발명은 반도체 장치의 세정에 관한 것으로, 특히 층간 절연층 형성에 이어 접촉홀을 형성한 후 홀내의 잔류물을 제거하여 금속배선 공정에 의한 접촉이 효과적으로 수행되도록 하는 반도체 장치의 세정방법 및 그 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to cleaning a semiconductor device, and more particularly, a method for cleaning a semiconductor device and a device for efficiently performing contact by a metallization process by removing residues in a hole after forming a contact hole following formation of an interlayer insulating layer. It is about.
반도체 소자 또는 집적회로 등이 소정 공정하에서 제조된 후에 각 영역간 전기적인 연결을 위해 BPSG(borophosphorous silicate glass)막과 같은 층간 절연막을 도포하여 접촉홀을 형성하도록 사진식각방법을 사용하여 에치해낸다. PSG 또는 BPSG와 같은 절연물을 사용하므로써 이후 저온도에서 평탄하 같은 연이은 공정을 용이하게 하다.After the semiconductor device or the integrated circuit is manufactured under a predetermined process, an interlayer insulating film, such as a borophosphorous silicate glass (BPSG) film, is etched using photolithography to form contact holes for electrical connection between the regions. The use of insulators such as PSG or BPSG facilitates subsequent processes such as being flat at low temperatures.
에칭 종점으로 실리콘 영역이 노출될 때까지 에칭이 행하여져 홀이 형성되는데 통상은 이 홀내에 잔류물이 존재하기 때문에 원활한 접촉을 위해서 노출된 홀내의 기판을 세정해야 한다.Etching is performed until the silicon region is exposed to the etching end point, so that a hole is formed. Usually, since there is a residue in the hole, the substrate in the exposed hole must be cleaned for smooth contact.
BPSG막은 낮은 온도에서 인을 도핑한 산화막이므로 불산용액등으로 습식 에칭시 잔류물 문제는 크게 문제될 것이 없지만 에칭 선택비(selectivity) 문제 때문에 HF 가스에 의한 건식 세정방식을 행한다.Since the BPSG film is an oxide film doped with phosphorus at a low temperature, the residue problem during wet etching with a hydrofluoric acid solution does not matter much, but a dry cleaning method using HF gas is performed due to the etching selectivity problem.
그러나 HF가스에 의한 산화막등이 제거되지만 절연막이 BPSG막이므로 B와 P를 포함하는 또 다른 잔류물이 생성된다. 즉 B2O3나 P2O3와 같은 잔류물을 없애기 위해서 이들 잔류물이 물에 잘 녹는 성질을 이용하여 습식 세정작업이 다시 이루어져야 한다. 세정을 위해 물을 사용하였기 때문에 홀내의 물은 또 다시 자연 산화막을 형성하게 되고, 이것이 PSG나 BPSG와 같은 반도체 장치 제조공정에 유리한 절연막을 사용하여 접촉물을 형성할 경우 접촉 저항의 증가를 유발하는 원인이 되고 있다.However, the oxide film by HF gas is removed, but since the insulating film is a BPSG film, another residue containing B and P is produced. In other words, in order to remove residues such as B 2 O 3 and P 2 O 3 , the wet cleaning process should be performed again using the property that these residues are well soluble in water. Since water is used for cleaning, the water in the hole again forms a natural oxide film, which causes an increase in contact resistance when a contact is formed using an insulating film which is advantageous for a semiconductor device manufacturing process such as PSG or BPSG. It is the cause.
특히 반도체 장치가 미세화 되면서 좁거나 깊은 홀의 형성에 따라 보다 완벽한 홀내의 세정상태를 요구하므로 본 발명은 이와 같은 문제점을 해결하고자 개량된 방식의 세정방법의 제공과 이를 실시할 수 있는 세정장치의 제공을 그 목적으로 한다.In particular, as the semiconductor device becomes finer and requires a more perfect cleaning state in the formation of narrow or deep holes, the present invention provides an improved cleaning method and a cleaning device capable of performing the same. For that purpose.
본 발명은 PSG 또는 BPSG막을 포함한 웨이퍼를 HF가스로 세정하고자 웨이퍼를 HF가스가 주입되는 반응 튜브내에 놓고 웨이퍼의 홀내의 잔류물 제거와 이 세정에 의해 생성된 또 다른 B 또는 P가 함유된 잔류물을 추출해내기 위해 마이크로 웨이브에 의해 여기된 H2가스를 상기 반응튜브내에 주입하도록 하여 세정을 행하도록 하는 것이다.In order to clean a wafer including a PSG or BPSG film with HF gas, the present invention places the wafer in a reaction tube into which HF gas is injected, removes residues in the holes of the wafer, and contains another B or P-containing residue produced by the cleaning. H 2 gas excited by microwaves is injected into the reaction tube in order to extract.
첨부도면을 참조하여 본 발명을 설명한다.The present invention will be described with reference to the accompanying drawings.
도면은 반도체 장치 세정 시스템을 개략적으로 나타낸 것으로 참조번호 1은 반응튜브, 2는 웨이퍼, 3은 웨이퍼를 지지하는 웨이퍼 홀더, 4는 IR램프, 5는 자외선을 전송하는 석영창, 5는 진공펌프로 연결되는 연결구, 6은 HF가스 인입구, 7은 전원(8)에 의해 마이크로 웨이브를 발생하는 마이크로 웨이블 방전유닛, 8은 H2가스 인입구, 9는 마이크로 웨이브 방전유닛에서 발생된 기상태(radical state)의 H-라디칼 가스를 반응튜브(1)로 연결하는 연결로이다. 이 세정장치에 웨이퍼를 장입시키기 전의 웨이퍼는 접촉홀을 형성하는 공정이 진행된 후의 웨이퍼로서 이 웨이퍼는 반응튜브(1)내에 웨이퍼 홀더(3)에 의해 지지되어 세정처리를 실시토록 한다.The drawing schematically shows a semiconductor device cleaning system, with reference numeral 1 representing a reaction tube, 2 a wafer, 3 a wafer holder for supporting a wafer, 4 an IR lamp, 5 a quartz window for transmitting ultraviolet light, and 5 a vacuum pump. Connected connector, 6 is the HF gas inlet, 7 is the microwave discharge unit for generating a microwave by the power source 8, 8 is H 2 gas inlet, 9 is a radical state generated in the microwave discharge unit H-radical gas of) is connected to the reaction tube (1). The wafer before the wafer is charged into the cleaning apparatus is a wafer after the process of forming the contact hole is performed, and the wafer is supported by the wafer holder 3 in the reaction tube 1 to perform the cleaning process.
반응튜브에 놓인 웨이퍼는 IR램프(4)에 의해 적정온도로 가열된다. 웨이퍼의 접촉홀내 잔류물을 제거하기 위해서 증기 인입구(6)로부터 HF증기가 반응튜브내로 도입된다. 그리고 반응실온 진공펌프 연결구의 조절밸브를 조절하여 진공도가 150∼350Torr이도록 조절된다. HF증기는 웨이퍼의 홀내의 열산화막과 같은 잔류물과 반응하여 휘발되어 세정된다. 그런데 이때, 언급하였듯이 홀을 이루는 절연층 또는 보호막(passivation)이 PSG 또는 BPSG막이기 때문에 B2O3나 P2O3와 같은 B, P를 포함하는 잔류물이 생성되므로 이를 제거하기 위해 HF 증기 투입과 동시에 H-라디칼 가스를 반응튜브(1)내에 공급하도록 마이크로 웨이브 방전유닛(7)으로부터 가스가 투입된다.The wafer placed in the reaction tube is heated to an appropriate temperature by the IR lamp (4). HF vapor is introduced into the reaction tube from the vapor inlet 6 to remove residues in the contact holes of the wafer. And it is controlled so that the degree of vacuum is 150 ~ 350 Torr by adjusting the control valve of the reaction room temperature vacuum pump connector. HF vapor is volatilized and cleaned by reaction with residues such as thermal oxide films in the holes of the wafer. However, as mentioned above, since the insulating layer or passivation forming the hole is a PSG or BPSG film, residues containing B and P, such as B 2 O 3 or P 2 O 3 , are generated to remove HF vapor. At the same time as the injection, the gas is introduced from the microwave discharge unit 7 so as to supply the H-radical gas into the reaction tube 1.
투입된 가스는 상기 방전유닛(7)에서 H2가스를 마이크로 웨이브로 분리시켜 얻어진 반응성이 매우 강한 H-라디칼 가스로서 이 가스는 웨이퍼의 홀내의 B 또는 P와 반응하여 BH3나 PH3등과 같은 가스를 형성하기 때문에 HF가스에 의한 산화물 제거 및 B, P화합물등이 모두 제거된다. H-라디칼에 의해 환원된 B, P의 산화물은 IR램프로부터의 열에너지에 의해 반응이 신속히 이루어지고 생성된 가스는 반응튜브의 배출구로 모두 추출된다.The injected gas is a highly reactive H-radical gas obtained by separating H 2 gas into microwaves in the discharge unit 7, and the gas reacts with B or P in the hole of the wafer to react with gas such as BH 3 or PH 3 . As a result, the oxides removed by HF gas and the B and P compounds are all removed. Oxides of B and P reduced by H-radicals are rapidly reacted by the thermal energy from the IR lamp, and the generated gas is extracted to the outlet of the reaction tube.
이와 같이 H-라디칼을 사용하여 BPSG막의 HF건식 세정시 생기는 BPSG 잔류물을 환원반응에 의해 제거시키므로 종래와 같이 잔류물 제거를 위한 습식세정단계를 필요로 하지 않으며 Si 표면에 자연산화막을 제어할 수 있어 홀을 통한 Si와의 접촉저항이 감소되는 장점이 있다. 또한 장치의 세팅이 용이하고 동일 튜브내에서 이루어지므로 웨이퍼 손상 방지 및 웨이퍼 처리에 융통성을 갖게한다.As such, since H-radical is used to remove BPSG residues generated during HF dry cleaning of BPSG membranes by reduction reaction, it is possible to control the natural oxide film on the Si surface without requiring the wet cleaning step to remove the residues as in the prior art. There is an advantage that the contact resistance with Si through the hole is reduced. In addition, the setting of the device is easy and is made in the same tube, thereby providing flexibility in wafer damage prevention and wafer processing.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910013223A KR930011539B1 (en) | 1991-07-31 | 1991-07-31 | Method for Cleaning Semiconductor Device and Its Device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019910013223A KR930011539B1 (en) | 1991-07-31 | 1991-07-31 | Method for Cleaning Semiconductor Device and Its Device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR930003276A KR930003276A (en) | 1993-02-24 |
| KR930011539B1 true KR930011539B1 (en) | 1993-12-10 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019910013223A Expired - Fee Related KR930011539B1 (en) | 1991-07-31 | 1991-07-31 | Method for Cleaning Semiconductor Device and Its Device |
Country Status (1)
| Country | Link |
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| KR (1) | KR930011539B1 (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20030021581A (en) * | 2001-09-06 | 2003-03-15 | 씨엘디 주식회사 | Cleaning apparatus and cleaning method using the same |
| CN117810145B (en) * | 2024-02-29 | 2024-05-07 | 西北电子装备技术研究所(中国电子科技集团公司第二研究所) | Silicon wafer feeding device of dephosphorization silicon glass machine |
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1991
- 1991-07-31 KR KR1019910013223A patent/KR930011539B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| KR930003276A (en) | 1993-02-24 |
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| PC1903 | Unpaid annual fee |
St.27 status event code: N-4-6-H10-H13-oth-PC1903 Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE Not in force date: 20061211 |
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| R18-X000 | Changes to party contact information recorded |
St.27 status event code: A-5-5-R10-R18-oth-X000 |
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| P22-X000 | Classification modified |
St.27 status event code: A-4-4-P10-P22-nap-X000 |