CN111211114A - A kind of fast power module and power module - Google Patents
A kind of fast power module and power module Download PDFInfo
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- CN111211114A CN111211114A CN202010133278.1A CN202010133278A CN111211114A CN 111211114 A CN111211114 A CN 111211114A CN 202010133278 A CN202010133278 A CN 202010133278A CN 111211114 A CN111211114 A CN 111211114A
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- 238000003475 lamination Methods 0.000 claims abstract description 24
- 239000003990 capacitor Substances 0.000 claims description 157
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- 230000003071 parasitic effect Effects 0.000 abstract description 8
- 230000005669 field effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 229910052751 metal Inorganic materials 0.000 description 12
- 239000002184 metal Substances 0.000 description 12
- 238000000605 extraction Methods 0.000 description 10
- 238000011084 recovery Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000001939 inductive effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/07—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D
- H01L25/072—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group subclass H10D the devices being arranged next to each other
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/492—Bases or plates or solder therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/16—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of types provided for in two or more different subclasses of H10B, H10D, H10F, H10H, H10K or H10N, e.g. forming hybrid circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
- H01L2224/48139—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate with an intermediate bond, e.g. continuous wire daisy chain
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
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Abstract
一种快速功率模块，包括用以为功率模块传导电流的第一功率电极、第二功率电极、输出电极；第一功率电极包括第一功率电极主体、第一功率电极第一连接部、第一功率电极第二连接部，第二功率电极包括第二功率电极主体、第二功率电极第一连接部、第二功率电极第二连接部，第一功率电极主体和第二功率电极主体均为片状且叠层设置，第一功率电极主体和第二功率电极主体之间叠层设有第一绝缘层；第一功率电极第二连接部和第二功率电极第二连接部均为片状且叠层设置，第一功率电极第二连接部与第二功率电极第二连接部之间的叠层间隔被设置为用以容纳外部连接端子的容置空间。可有效简化功率模块结构，降低整个功率模组系统的寄生电感。
A fast power module, comprising a first power electrode, a second power electrode and an output electrode for conducting current for the power module; the first power electrode comprises a first power electrode main body, a first connection part of the first power electrode, a first power electrode The second connection part of the electrode, the second power electrode includes a second power electrode body, a first connection part of the second power electrode, and a second connection part of the second power electrode, and the first power electrode body and the second power electrode body are both sheet-shaped The first insulating layer is stacked between the first power electrode body and the second power electrode body; the first power electrode second connection part and the second power electrode second connection part are both sheet-shaped and stacked. Layers are arranged, and the lamination interval between the second connection part of the first power electrode and the second connection part of the second power electrode is set as an accommodating space for accommodating the external connection terminal. It can effectively simplify the structure of the power module and reduce the parasitic inductance of the entire power module system.
Description
Technical Field
The invention relates to the field of power electronics, in particular to a rapid power module and a power module.
Background
The power module is a power switch module formed by combining and packaging power electronic power devices such as metal oxide semiconductors (power MOS transistors), insulated gate field effect transistors (IGBT) and Fast Recovery Diodes (FRD) according to certain functions, and is mainly used for power conversion of electric vehicles, wind power generation, industrial frequency conversion and other occasions.
A motor driving circuit of an electric vehicle generally includes three groups of power modules having upper and lower arms, respectively, fig. 1 is a circuit diagram of a conventional power module, which shows a circuit diagram of a group of power modules having upper and lower arms, and includes: an insulated gate field effect transistor Z1 as an upper arm, a fast recovery diode D1 connected in reverse parallel with the insulated gate field effect transistor Z1, an insulated gate field effect transistor Z2 as a lower arm and a fast recovery diode D2 connected in reverse parallel with the fast recovery diode D2, wherein a collector of the insulated gate field effect transistor Z1 is connected with a positive electrode p + of the power module, an emitter of the insulated gate field effect transistor Z2 is connected with a collector of the edge gate field effect transistor Z2, an emitter of the edge gate field effect transistor Z2 is connected with a negative electrode p-of the power module, and the emitter of the insulated gate field effect transistor Z1 and the collector of the insulated gate field effect transistor Z2 are commonly connected. In practical applications, three sets of the power modules are generally used to provide three-phase alternating current for the motor; the operation principle of the power module is illustrated by the circuit schematic diagram of only one group of power modules: when the insulated gate field effect transistor Z1 is switched on, current is sequentially OUTPUT to the motor through the positive electrode p + of the power module, the collector electrode and the emitter electrode of the insulated gate field effect transistor Z1 and the power module OUTPUT terminal OUTPUT; when the insulated gate field effect transistor Z1 is turned off, since the motor is an inductive load, to ensure that the current flow direction is unchanged, the follow current needs to be OUTPUT to the motor through the other groups of power modules via the negative p-of the power module, the diode D2, and the power module OUTPUT terminal OUTPUT.
In some practical applications, the electronic device in the power module may also adopt a power MOS transistor, and fig. 2 is a schematic circuit diagram of another power MOS transistor module, which includes: the power MOS transistor M1 as the upper bridge arm, the power MOS transistor M2 as the lower bridge arm, wherein the drain electrode of the power MOS transistor M1 is connected with the positive electrode p + of the power module, the source electrode of the power MOS transistor M1 is connected with the drain electrode of the power MOS transistor M2, the source electrode of the power MOS transistor M2 is connected with the negative electrode p-of the power module, the source electrode of the power MOS transistor M1 and the drain electrode of the power MOS transistor M2 are commonly connected with the output terminal of the power module. In addition, the reverse conducting type IGBT and the power MOS have the same structure and function, and because a diode is built in, a reverse parallel diode is not needed, and the module design and structure are similar to those of the power MOS, and are not described herein again.
In practical applications, parasitic inductance has been a major problem to be overcome in power electronic device applications, especially in high-frequency and high-power applications of power MOS transistors. Parasitic inductance inside the module can cause overvoltage in the turn-off process, and parasitic parameters can cause voltage spike and waveform oscillation in the switching process of the power module, so that electromagnetic interference and switching loss are increased, and even the module is damaged.
Disclosure of Invention
The invention provides a rapid power module for solving the problems in the prior art, which comprises a first power electrode, a second power electrode and an output electrode, wherein the first power electrode, the second power electrode and the output electrode are used for conducting current for the power module; the first power electrode comprises a first power electrode main body, a first power electrode first connecting part and a first power electrode second connecting part, the second power electrode comprises a second power electrode main body, a second power electrode first connecting part and a second power electrode second connecting part, the first power electrode main body is connected with the corresponding conducting layer in the power module through the first power electrode first connecting part, the second power electrode main body is connected with the corresponding conducting layer in the power module through the second power electrode first connecting part, the first power electrode main body and the second power electrode main body are both flaky and arranged in a laminated manner, and a first insulating layer is arranged between the first power electrode main body and the second power electrode main body in a laminated manner; the first power electrode second connecting portion and the second power electrode second connecting portion are both in a sheet shape and are arranged in a laminated mode, the first power electrode second connecting portion extends from the first power electrode main body to the outside of the power module, the second power electrode second connecting portion extends from the second power electrode main body to the outside of the power module, the laminated interval between the first power electrode second connecting portion and the second power electrode second connecting portion is set to be an accommodating space used for accommodating an external connecting terminal, and the external connecting terminal is connected with the corresponding first power electrode second connecting portion and the corresponding second power electrode second connecting portion respectively.
Further, the first insulating layer covers the whole lamination surface of the first power electrode main body and the second power electrode main body, and extends to the outside of the edge of the lamination surface.
Further, the first power electrode second connection portion and the second power electrode second connection portion extend outside the power module after the laminated end portions of the first power electrode main body and the second power electrode main body diverge, so that a lamination interval adapted to the thickness of the external connection terminal is formed between the first power electrode second connection portion and the second power electrode second connection portion.
Furthermore, a first power electrode connecting hole is formed in the first power electrode second connecting portion, and a second power electrode connecting hole corresponding to the first power electrode connecting hole in position is formed in the second power electrode second connecting portion.
The power module further comprises an insulating substrate, and a first bridge arm conducting layer, a second bridge arm conducting layer, an output electrode conducting layer, a first power electrode conducting layer, a second power electrode conducting layer, a first bridge arm power chip and a second bridge arm power chip, wherein the first bridge arm conducting layer, the second bridge arm conducting layer, the output electrode conducting layer, the first power electrode conducting layer and the second power electrode conducting layer are arranged on the insulating substrate; the first bridge arm power chip is electrically connected with the first power electrode through the first power electrode conducting layer, and the first bridge arm power chip is electrically connected with the output electrode through the output electrode conducting layer; the second bridge arm power chip is electrically connected with the second power electrode through a second power electrode conducting layer, and the second bridge arm power chip is electrically connected with the output electrode through an output electrode conducting layer; the first power electrode first connecting part is welded on the first power electrode conducting layer, and the second power electrode first connecting part is welded on the second power electrode conducting layer.
The embodiment of the invention also provides a power module, which comprises the power module provided by any technical scheme, a capacitor group, a first capacitor leading-out electrode and a second capacitor leading-out electrode, wherein the first capacitor leading-out electrode comprises a first capacitor leading-out electrode main body and a first capacitor leading-out electrode connecting part, the second capacitor leading-out electrode comprises a second capacitor leading-out electrode main body and a second capacitor leading-out electrode connecting part, one end of the first capacitor leading-out electrode main body is electrically connected with the corresponding electrode of the capacitor group, the second capacitor leading-out electrode main body is electrically connected with the corresponding electrode of the capacitor group, the first capacitor leading-out electrode main body and the second capacitor leading-out electrode main body are both flaky and arranged in a laminated manner, the first capacitor leading-out electrode connecting part is flaky and extends outwards from the first capacitor leading-out electrode main body, the second capacitor leading-out electrode connecting part is flaky and extends outwards, the first capacitor leading-out electrode connecting part and the second capacitor leading-out electrode connecting part are arranged in a laminated mode and are inserted into the accommodating space, a second insulating layer is arranged between the first capacitor leading-out electrode connecting part and the second capacitor leading-out electrode connecting part, the first capacitor leading-out electrode connecting part is connected with the first power electrode second connecting part, and the second capacitor leading-out electrode connecting part is connected with the second power electrode second connecting part.
Further, the second insulating layer covers the entire lamination surface of the first capacitor lead-out electrode connection portion and the second capacitor lead-out electrode connection portion, and extends to the outside of the edge of the lamination surface.
Further, a third insulating layer is arranged between the first capacitor lead-out electrode main body and the second capacitor lead-out electrode main body.
Further, the third insulating layer covers the entire lamination surface of the first capacitor lead-out electrode main body and the second capacitor lead-out electrode main body, which are opposite to each other, and extends to the outside of the edge of the lamination surface.
Furthermore, the first capacitor leading-out electrode connecting portion is provided with a first capacitor leading-out electrode connecting hole corresponding to the first power electrode connecting hole, the second capacitor leading-out electrode connecting portion is provided with a second capacitor leading-out electrode connecting hole corresponding to the second power electrode connecting hole, an insulating pad is arranged above the first power electrode second connecting portion, a nut is arranged below the second power electrode second connecting portion, the bolt sequentially penetrates through the insulating pad, the first power electrode connecting hole, the first capacitor leading-out electrode connecting hole, the second insulating layer, the second capacitor leading-out electrode connecting hole and the second power electrode connecting hole to be connected with the nut, and the bolt is insulated from the first power electrode second connecting portion and the first capacitor leading-out electrode connecting portion.
The invention provides a plug-in power module, which comprises a first power electrode, a second power electrode and an output electrode, wherein the first power electrode, the second power electrode and the output electrode are used for conducting current for the power module; the first power electrode comprises a first power electrode main body, a first power electrode first connecting part and a first power electrode second connecting part, the second power electrode comprises a second power electrode main body, a second power electrode first connecting part and a second power electrode second connecting part, the first power electrode main body is connected with the corresponding conducting layer in the power module through the first power electrode first connecting part, the second power electrode main body is connected with the corresponding conducting layer in the power module through the second power electrode first connecting part, the first power electrode main body and the second power electrode main body are both flaky and arranged in a laminated manner, and a first insulating layer is arranged between the first power electrode main body and the second power electrode main body in a laminated manner; the first power electrode second connecting portion and the second power electrode second connecting portion are both in a sheet shape and are arranged in a laminated mode, the first power electrode second connecting portion extends from the first power electrode main body to the outside of the power module, the second power electrode second connecting portion extends from the second power electrode main body to the outside of the power module, the laminated interval between the first power electrode second connecting portion and the second power electrode second connecting portion is set to be an accommodating space used for accommodating an external connecting terminal, and the external connecting terminal is connected with the corresponding first power electrode second connecting portion and the corresponding second power electrode second connecting portion respectively. The parasitic inductance of the whole power module can be effectively reduced. In addition, the invention also provides a power module adopting the power module.
Drawings
Fig. 1 is a schematic circuit diagram of a conventional power module;
FIG. 2 is a circuit schematic of another prior art power module;
fig. 3 is a structural diagram of a single module of a plug-in power module according to an embodiment of the present invention;
fig. 4 is a structural diagram of a multi-module integrated implementation of a plug-in power module according to a second embodiment of the present invention;
fig. 5 is a structural diagram of a single module of a plug-in power module according to a third embodiment of the present invention;
fig. 6 is a structural diagram of a power module according to a fourth embodiment of the present invention;
fig. 7 is a structural diagram of electrode connection between a power module and a capacitor bank in a power module according to a fifth embodiment of the present invention;
fig. 8 is a three-dimensional structural diagram of a power module according to a sixth embodiment of the present invention;
fig. 9 is a side view structural diagram of a power module according to a seventh embodiment of the present invention;
fig. 10 is a perspective view of a power module according to an eighth embodiment of the present invention.
Detailed Description
The embodiments of the present invention will be described in detail below with reference to the accompanying drawings, and it should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
A fast power module as shown in fig. 3 and 4, comprising a first power electrode 10, a second power electrode 20, an output electrode 30 for conducting current for the power module; the first power electrode 10 includes a first power electrode main body 11, a first power electrode first connection portion 12, a first power electrode second connection portion 13, the second power electrode 20 includes a second power electrode main body 21, a second power electrode first connection portion 22, a second power electrode second connection portion 23, the first power electrode main body 11 is connected to the corresponding conductive layer inside the power module through the first power electrode first connection portion 12, the second power electrode main body 21 is connected to the corresponding conductive layer inside the power module through the second power electrode first connection portion 22, specifically, in some practical applications, as shown in fig. 3 and 4, the first power electrode main body 11 and the first power electrode first connection portion 12 are integrally formed on the same metal sheet, and the first power electrode main body 11 and the first power electrode first connection portion 12 are not two mutually exclusive concepts, in some practical applications, the first power electrode main body and the first power electrode first connection part can be realized by different parts of the same structure; the second power electrode main body 21 and the second power electrode first connection portion 22 are integrally formed on the same metal sheet, and the second power electrode main body 21 and the second power electrode first connection portion 22 are not two mutually exclusive concepts, in some practical applications, the second power electrode main body 21 and the second power electrode first connection portion 22 can be implemented by different parts of the same structure, as shown in fig. 3, the second power electrode main body 21 and the second power electrode first connection portion 22 are substantially located on the same metal sheet, and the end portion of the metal sheet connected with the second power electrode conductive layer implements the function of the second connection portion of the second power electrode, where the second power electrode first connection portion 22 is a part of the second power electrode main body 21; the first power electrode main body 11 and the second power electrode main body 21 are both in a sheet shape and are stacked, specifically, in some practical applications, the first power electrode main body 11 and the second power electrode main body 21 may be a flat extending sheet metal or a bent extending sheet metal, as shown in fig. 3 and 4, the first power electrode main body 11 and the second power electrode main body 21 are both made of bent extending sheet metals; a first insulating layer 40 is laminated between the first power electrode body 11 and the second power electrode body 21; specifically, in some practical applications, the first insulating layer 40 covers the entire lamination surface of the first power electrode body 11 and the second power electrode body 21, and extends to the outside of the edge of the lamination surface, so as to provide a suitable creepage distance according to practical requirements. Thus, the requirement of insulation between the first power electrode main body 11 and the second power electrode main body 21 can be met, and the lamination interval between the first power electrode main body 11 and the second power electrode main body 21 can be greatly reduced, so that the parasitic inductance is further reduced; in addition, the first insulating layer 40 may partially cover the lamination surface according to actual needs, but the first insulating layer 40 needs to have a sufficient thickness to increase the lamination interval between the first power electrode body 11 and the second power electrode body 21 and provide an appropriate creepage distance; the first power electrode second connecting portion 13 and the second power electrode second connecting portion 23 are both in a sheet shape and are arranged in a laminated manner, the first power electrode second connecting portion 13 extends from the first power electrode main body 11 to the outside of the power module, and the second power electrode second connecting portion 23 extends from the second power electrode main body 21 to the outside of the power module; as shown in fig. 3, in some practical applications, in particular, the first power electrode main body 11 and the first power electrode second connecting portion 13 are integrally formed on the same metal sheet, the second power electrode main body 21 and the second power electrode second connecting portion 23 are integrally formed on the same metal sheet, and the lamination interval between the first power electrode second connecting portion 13 and the second power electrode second connecting portion 23 is set as an accommodating space for accommodating external connection terminals connected to the corresponding first power electrode second connecting portion 13 and the second power electrode second connecting portion 23, respectively.
As a further improvement of the above-described technical solution, the first power electrode second connection portion 13 and the second power electrode second connection portion 23 extend outside the power module after the laminated end portions of the first power electrode body 11 and the second power electrode body 21 diverge, so as to form a lamination interval adapted to the thickness of the external connection terminal between the first power electrode second connection portion 13 and the second power electrode second connection portion 23. Specifically, in some practical applications, the first power electrode second connection portion 13 and the second power electrode second connection portion 23 may be diverged in various ways, and in the embodiment shown in fig. 3, a first bent portion 14 for making the first power electrode second connection portion 13 be far away from the second power electrode second connection portion 23 in the lamination direction is provided between the first power electrode main body 11 and the first power electrode second connection portion 13; alternatively, a second bent portion 24 for separating the second power electrode second connection portion 23 from the first power electrode second connection portion 13 in the stacking direction may be provided only between the second power electrode main body 21 and the second power electrode second connection portion 23; still alternatively, as shown in fig. 9, the first bent portion and the second bent portion may be provided at the same time.
As a further improvement of the above technical solution, as shown in fig. 4, the first power electrode second connection portion 13 is provided with a first power electrode connection hole 131, and the second power electrode second connection portion 23 is provided with a second power electrode connection hole 231 at a position corresponding to the first power electrode connection hole 131. Specifically, in some practical applications, one or more first power electrode connection holes 131 and one or more second power electrode connection holes 231 may be provided, and as shown in fig. 5, two first power electrode connection holes 131 and two second power electrode connection holes 231 may be provided.
As a further refinement of the above technical solution, the power module further includes an insulating substrate 100, and a first bridge arm conductive layer 200, a second bridge arm conductive layer 300, an output electrode conductive layer 400, a first power electrode conductive layer 500, a second power electrode conductive layer 600, a first bridge arm power chip 700 disposed on the first bridge arm conductive layer, and a second bridge arm power chip 800 disposed on the second bridge arm conductive layer, which are disposed on the insulating substrate; specifically, in some practical applications, the power module is a half-bridge module mainly composed of an upper bridge arm power chip, a conductive layer corresponding to the upper bridge arm, and a conductive layer corresponding to the lower bridge arm power chip, and fig. 4 is a product form in which three identical half-bridge modules are integrated together, as shown in fig. 4 and fig. 5, the first bridge arm conductive layer 200 is specifically a lower bridge arm conductive layer, the second bridge arm conductive layer 300 is an upper bridge arm conductive layer, the first power electrode 10 is a negative electrode, the second power electrode 20 is a positive electrode, the first bridge arm power chip 700 is a lower bridge arm power chip, the second bridge arm power chip 800 is an upper bridge arm power chip, and the first bridge arm power chip 700 and the second bridge arm power chip 800 may use IGBTs or power MOS transistors. The first bridge arm power chip 700 is electrically connected with the first power electrode 10 through the first power electrode conductive layer 500, and the first bridge arm power chip 700 is electrically connected with the output electrode 30 through the output electrode conductive layer 400; the second bridge arm power chip 800 is electrically connected with the second power electrode 20 through the second power electrode conductive layer 600, and the second bridge arm power chip 800 is electrically connected with the output electrode 30 through the output electrode conductive layer 400; the first bridge arm conductive layer 200 and the second bridge arm conductive layer 300 are arranged on two sides of the upper surface of the insulating substrate 100, the first power electrode conductive layer 500 and the second power electrode conductive layer 600 are arranged between the first bridge arm conductive layer 200 and the second bridge arm conductive layer 300, the first power electrode conductive layer 500 is arranged close to the first bridge arm power chip 700, the second power electrode conductive layer 600 is arranged close to the second bridge arm power chip 800, the first power electrode first connecting portion 12 is welded on the first power electrode conductive layer 500, and the second power electrode first connecting portion 22 is welded on the second power electrode conductive layer 600.
As shown in fig. 6 to 10, an embodiment of the present invention further provides a power module, which includes the power module provided in any one of the above technical solutions, a capacitor bank 70, a first capacitor leading-out electrode 50, and a second capacitor leading-out electrode 60, where the first capacitor leading-out electrode 50 includes a first capacitor leading-out electrode main body 51 and a first capacitor leading-out electrode connecting portion 52, the second capacitor leading-out electrode 60 includes a second capacitor leading-out electrode main body 61 and a second capacitor leading-out electrode connecting portion 62, one end of the first capacitor leading-out electrode main body 51 is electrically connected to an electrode corresponding to the capacitor bank, the second capacitor leading-out electrode main body 61 is electrically connected to an electrode corresponding to the capacitor bank, the first capacitor leading-out electrode main body 51 and the second capacitor leading-out electrode main body 61 are both in a sheet shape and are stacked, the first capacitor leading-out electrode connecting portion 52 is in a sheet shape and extends, the second capacitor leading-out electrode connecting part 62 is sheet-shaped and extends outwards from the second capacitor leading-out electrode main body 61, and specifically, in some practical applications, the first capacitor leading-out electrode 50 is connected with the negative electrode of the capacitor bank, and the second capacitor leading-out electrode 60 is connected with the positive electrode of the capacitor bank; the first capacitor leading-out electrode main body 51 and the first capacitor leading-out electrode connecting portion 52 are integrally formed on the same metal sheet, the second capacitor leading-out electrode main body 61 and the second capacitor leading-out electrode connecting portion 62 are integrally formed on the same metal sheet, the first capacitor leading-out electrode connecting portion 52 and the second capacitor leading-out electrode connecting portion 62 are arranged in a laminated mode and are inserted into the accommodating space, and the second insulating layer 80 is arranged between the first capacitor leading-out electrode connecting portion 52 and the second capacitor leading-out electrode connecting portion 62. Thus, the requirement of insulation between the first capacitor lead-out electrode connecting part 52 and the second capacitor lead-out electrode connecting part 62 can be met, and the lamination interval between the first capacitor lead-out electrode connecting part and the second capacitor lead-out electrode connecting part can be greatly reduced so as to further reduce parasitic inductance; in addition, the second insulating layer 80 may partially cover the lamination surface as required, but the second insulating layer 80 needs to have a sufficient thickness to increase the lamination interval between the first capacitor lead electrode connecting portion 52 and the second capacitor lead electrode connecting portion 62 and provide an appropriate creepage distance; the first capacitor extraction electrode connection portion is connected 52 to the first power electrode second connection portion 13, and the second capacitor extraction electrode connection portion 62 is connected 23 to the second power electrode second connection portion.
As a further improvement of the above technical solution, a third insulating layer 90 is disposed between the first capacitor lead-out electrode main body 51 and the second capacitor lead-out electrode main body 61. Specifically, in some practical applications, the third insulating layer covers the entire lamination surface of the first and second capacitor leading electrode main bodies 51 and 61, which faces each other, and extends to the outside of the edge of the lamination surface. To provide a suitable creepage distance according to practical requirements. Specifically, in some implementations, the second insulating layer 80 and the third insulating layer 90 are integrally formed on the same piece of insulating material.
Specifically, in some practical applications, as shown in the power module shown in fig. 6, the capacitor bank includes a plurality of capacitors, the plurality of capacitors are disposed between the first capacitor busbar 110 and the second capacitor busbar 120, the first capacitor leading-out electrode 50 is connected to the first capacitor busbar 110 through a first capacitor busbar connection portion 111 disposed on a side surface of the capacitor bank, and the second capacitor leading-out electrode 60 is connected to the first capacitor busbar 120 through a second capacitor busbar connection portion 121 disposed on a side surface of the capacitor bank; as shown in fig. 9, the capacitor bank may be directly disposed on a PCB, the first capacitor lead-out electrode main body 51 and the first lead-out electrode connecting portion 52 are disposed on one surface of the PCB, and the second capacitor lead-out electrode main body 61 and the second capacitor lead-out electrode connecting portion 62 are disposed on the other surface of the PCB.
As a further improvement of the above technical solution, in some practical applications, as shown in fig. 6 to 10, the first capacitor leading-out electrode connecting part is provided with a first capacitor leading-out electrode connecting hole 521 corresponding to the first power electrode connecting hole 131 in 52, the second capacitor leading-out electrode connecting part 62 is provided with a second capacitor leading-out electrode connecting hole 621 corresponding to the second power electrode connecting hole 231 in 62, an insulating pad 150 for clamping a bolt is arranged above the first power electrode second connecting part 13, a nut 160 is arranged below the second power electrode second connecting part 23, the bolt 170 sequentially penetrates through the insulating pad 150, the first power electrode connecting hole 131, the first capacitor leading-out electrode connecting hole 521, the second insulating layer 80, the second capacitor leading-out electrode connecting hole 621 and the second power electrode connecting hole 231 to be connected with the nut 160, and the bolt 170 is insulated from the first power electrode second connecting part 13 and the first capacitor leading-out electrode connecting part 52. Specifically, in some practical applications, the second insulating layer 80 is provided with a second insulating layer connection hole 801 corresponding to the bolt 170, the bolt 170 penetrates through the second insulating layer connection hole 801, and the aperture of the second insulating layer connection hole 801 is smaller than the first capacitor leading-out electrode connection hole 521 and the second capacitor leading-out electrode connection hole 621 so as to provide a proper creepage distance. Specifically, in some practical applications, a power module shown in fig. 8 to 10 includes a plurality of power modules provided in any one of the above technical solutions, a capacitor bank 70, a first capacitor extraction electrode 50, and a second capacitor extraction electrode 60; the first capacitance extraction electrode 50 includes a first capacitance extraction electrode main body 51 and a first capacitance extraction electrode connecting portion 52, and the second capacitance extraction electrode 60 includes a second capacitance extraction electrode main body 61 and a second capacitance extraction electrode connecting portion 62; the first capacitor leading-out electrode main body 51 and the second capacitor leading-out electrode main body 61 are both strip-shaped metal sheets, a plurality of first capacitor leading-out electrode connecting parts 52, the number of which is matched with that of a plurality of power modules, integrally extend from the first capacitor leading-out electrode main body 51, and a plurality of first capacitor leading-out electrode connecting parts 62, the number of which is matched with that of the plurality of power modules, integrally extend from the first capacitor leading-out electrode main body 61, specifically, the leading-out shapes of the first capacitor leading-out electrode connecting parts 52 and the second capacitor leading-out electrode connecting parts 62 can be regular integral extension as shown in fig. 10, so that the plurality of first capacitor leading-out electrode connecting parts 52 are integrally connected, and the plurality of second capacitor leading-out electrodes 62 are integrally connected; according to practical requirements, the lead-out shapes of the first and second capacitance lead-out electrode connection portions 52 and 62 may be irregular extensions as shown in fig. 8, such that the plurality of first capacitance lead-out electrode connection portions 52 are separated from each other and the plurality of second capacitance lead-out electrode connection portions 62 are separated from each other; the first capacitor lead-out electrode connecting parts 52 and the second lead-out electrode connecting parts 62 are respectively stacked and then inserted into the accommodating spaces corresponding to the power modules side by side. The electrode lamination area is more ideal on the whole, and the parasitic inductance of the whole module is reduced.
The above description is only a preferred embodiment of the present invention, and not intended to limit the scope of the present invention, and all modifications of equivalent structures and equivalent processes, which are made by using the contents of the present specification and the accompanying drawings, or directly or indirectly applied to other related technical fields, are included in the scope of the present invention.
Claims (10)
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010133278.1A CN111211114A (en) | 2020-03-01 | 2020-03-01 | A kind of fast power module and power module |
| PCT/CN2021/077347 WO2021175130A1 (en) | 2020-03-01 | 2021-02-23 | Rapid power module and power module |
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| CN202010133278.1A CN111211114A (en) | 2020-03-01 | 2020-03-01 | A kind of fast power module and power module |
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Cited By (2)
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| CN112670263A (en) * | 2020-12-30 | 2021-04-16 | 华芯威半导体科技(北京)有限责任公司 | Laminated lead terminal and power module adopting same |
| WO2021175130A1 (en) * | 2020-03-01 | 2021-09-10 | 深圳市奕通功率电子有限公司 | Rapid power module and power module |
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| CN114188314A (en) * | 2021-10-28 | 2022-03-15 | 华为数字能源技术有限公司 | Power module and manufacturing method thereof |
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| WO2021175130A1 (en) | 2021-09-10 |
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