CN109560066A - A kind of power module with gap bridge conductive layer - Google Patents
A kind of power module with gap bridge conductive layer Download PDFInfo
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- CN109560066A CN109560066A CN201811544684.6A CN201811544684A CN109560066A CN 109560066 A CN109560066 A CN 109560066A CN 201811544684 A CN201811544684 A CN 201811544684A CN 109560066 A CN109560066 A CN 109560066A
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000003475 lamination Methods 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 230000005611 electricity Effects 0.000 claims description 5
- 230000003071 parasitic effect Effects 0.000 abstract description 5
- 230000005669 field effect Effects 0.000 description 10
- 238000010586 diagram Methods 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 5
- 238000000034 method Methods 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000009514 concussion Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/538—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames the interconnection structure between a plurality of semiconductor chips being formed on, or in, insulating substrates
- H01L23/5381—Crossover interconnections, e.g. bridge stepovers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
A kind of power module with gap bridge conductive layer provided by the invention, it include: the first power electrode, second power electrode, first insulating substrate, output electrode, second electrode conductive layer, the the first bridge arm conductive layer for being arranged on the first insulating substrate and being electrically connected with the first power electrode, the first bridge arm power chip on first bridge arm conductive layer is set, the the second bridge arm conductive layer for being arranged on the first insulating substrate and being electrically connected with output electrode, the second bridge arm power chip on second bridge arm conductive layer is set, the second bridge arm power chip is electrically connected by second electrode conductive layer with the second power electrode；First bridge arm gap bridge conductive layer lamination between the first bridge arm conductive layer and second electrode conductive layer is arranged, and bridges the first bridge arm power chip and the second bridge arm conductive layer.Compared with prior art, there is lower parasitic inductance.
Description
Technical field
The present invention relates to field of power electronics, and in particular to a kind of power module with gap bridge conductive layer.
Background technique
Power module is power electronic electrical device such as metal-oxide semiconductor (MOS) (power MOS pipe), insulated-gate type field effect
It answers transistor (IGBT), the power switch module that fast recovery diode (FRD) is combined and packaged by certain function is mainly used
In electric car, wind-power electricity generation, the power conversion under the various occasions such as industrial frequency conversion.
The motor-drive circuit of electric car generally includes three groups of power modules for being respectively provided with upper and lower bridge arm, and Fig. 1 is existing
A kind of circuit diagram for the power module having shows the circuit signal of one group of power module with upper and lower bridge arm
Figure comprising: as the insulated-gate type field effect transistor Z1 of upper bridge arm, and the fast recovery diode with its reverse parallel connection
D1, as the insulated-gate type field effect transistor Z2 of lower bridge arm, and the fast recovery diode D2 with its reverse parallel connection, wherein absolutely
The positive p+ of the collector connection power module of edge grid-type field effect transistor Z1, emitter connect edge grid-type field effect transistor
The collector of pipe Z2, the cathode p- of the emitter connection power module of edge grid-type field effect transistor Z2, insulated-gate type field effect
The emitter of transistor Z1 and the collector of Z2 connect the output terminal of power module jointly.In practical applications, usually used
Three groups of power modules provide three-phase alternating current for motor；It is only illustrated with the circuit diagram of one group of power module herein
Working principle: when insulated-gate type field effect transistor Z1 is connected, the electric current successively positive p+ through power module, insulated-gate type field
Collector, emitter, the power module output terminal OUTPUT of effect transistor Z1 is exported to motor；Work as insulated-gate type field effect
When transistor Z1 is turned off, since motor is inductive load, to guarantee that current direction is constant, freewheel current need to be through other groups of power
Cathode p-, diode D2, power module output terminal OUTPUT of the module through the power module are exported to motor.
Under the application of certain smaller powers, the electronic device in power module can also use power MOS pipe, and Fig. 2 is
Another circuit diagram of power MOS pipe module comprising: as the power MOS pipe M1 of upper bridge arm, as the function of lower bridge arm
The positive p+ of the drain electrode connection power module of rate metal-oxide-semiconductor M2, wherein power MOS pipe M1, the source electrode of power MOS pipe M1 connect power
The drain electrode of metal-oxide-semiconductor M2, the cathode p- of the source electrode connection power module of power MOS pipe M2, the source electrode and power of power MOS pipe M1
The drain electrode of metal-oxide-semiconductor M2 connects the output terminal of power module, working principle and use insulated-gate type field effect crystal jointly
The module of pipe is similar, and the difference between both essentially consists in backward dioded built in power MOS pipe, therefore does not need in parallel anti-
To diode.In addition, inverse conductivity type IGBT and power MOS has identical structure and function, due to diode-built-in, it is not required to reversely simultaneously
Union II pole pipe, module design and structure are similar to power MOS, and details are not described herein.
Power module generally comprises at least one half-bridge structure, and the half-bridge structure is by two bridge arms and to for power mould
First power electrode of block conduction electric current, the second power electrode, output electrode are composed, the first power electrode, the second power
Electrode and output electrode are connected with conductive layer corresponding in power module, to realize half-bridge circuit function；In practical applications,
Parasitic inductance is all the main bugbear that needs to overcome in power electronic device application all the time, especially in high frequency and high-power
Application.The parasitic inductance of inside modules will cause the overvoltage in turn off process, and parasitic parameter will cause power module
Waveform concussion in switching process, to increase electromagnetic interference and switching loss.
Summary of the invention
The present invention to solve problems of the prior art, provides a kind of power module with gap bridge conductive layer, packet
Include: the first power electrode, the second power electrode, the first insulating substrate, second electrode conductive layer, are arranged first output electrode
The first bridge arm conductive layer for being electrically connected on insulating substrate and with the first power electrode, first be arranged on the first bridge arm conductive layer
Bridge arm power chip, the second bridge arm conductive layer for being arranged on the first insulating substrate and being electrically connected with output electrode, setting are the
The second bridge arm power chip on two bridge arm conductive layers, the second bridge arm power chip pass through second electrode conductive layer and second
Power electrode electrical connection；First bridge arm gap bridge conductive layer lamination between the first bridge arm conductive layer and second electrode conductive layer is set
It sets, bridges the first bridge arm power chip and the second bridge arm conductive layer.
Further, the power module further include: be connected to the first bridge arm power chip and the first bridge arm gap bridge is conductive
The first bridge arm conductive column between layer and the bridging that is connected between the first bridge arm gap bridge conductive layer and the second bridge arm conductive layer
Conductive column.
Further, the power module further include: be connected to second electrode conductive layer and the second bridge arm power chip it
Between the second bridge arm conductive column.
Further, the power module further include: the second insulated substrate, the second insulated substrate include and the first insulation base
The opposite first surface of plate, second electrode conductive layer are covered on the first surface, and second electrode conductive layer is equipped with the first bridge
Arm gap bridge insulation island, the first bridge arm gap bridge conductive layer setting are passed a bridge in insulation island in the first bridge arm.
Further, the first bridge arm conductive layer, the first bridge arm gap bridge conductive layer, the first bridge arm are passed a bridge insulation island, the
One bridge arm power chip be it is multiple, each first bridge arm conductive layer corresponding thereto is arranged in the grouping of the first bridge arm power chip
On, every group of first bridge arm power chip is electrically connected with corresponding first bridge arm gap bridge conductive layer respectively, and each first bridge arm is conductive
Layer is electrically connected by fuse with the first power electrode respectively.
Further, the fuse is binding line.
Further, the fuse is the line-shaped conductive layer being arranged on the first insulating substrate.
Further, the first bridge arm gap bridge insulation island, the through-hole and first surface opened up by second electrode conductive layer
Cooperation is constituted.
Further, the power module further include: third insulating substrate, the first bridge arm gap bridge insulation island, by setting
The third insulating substrate set on second electrode conductive layer is constituted.
Further, the power module further include: be set on the first insulating substrate and each first bridge arm power chip
First bridge arm of control terminal electrical connection controls conductive layer, and is set on the first insulating substrate and each second bridge arm power chip
Second bridge arm of control terminal electrical connection controls conductive layer.
Further, the first bridge arm power chip and the second bridge arm power chip include power MOS pipe and reversed
Parallel diode.
Further, the first bridge arm power chip and the second bridge arm power chip include IGBT and reverse parallel connection two
Pole pipe.
Further, the first power electrode includes the first power electrode main body and the first power electrode first connecting portion, the
Two power electrodes include the second power electrode main body and the second power electrode first connecting portion, and the first power electrode main body passes through the
One power electrode first connecting portion is electrically connected with the first bridge arm conductive layer, and the second power electrode main body passes through the second power electrode the
One interconnecting piece is electrically connected with second electrode conductive layer, and the first power electrode main body and the second power electrode main body are sheet and layer
Folded to be spaced apart, the first power electrode main body, which is equipped with, to be extended along first direction to outside power module, and exceeds the second power electrode
First power electrode second connecting portion of body rim；Second power electrode main body is equipped with to extend outwardly from its side, and exceeds
Second power electrode second connecting portion of the first power electrode body rim.
Further, the first power electrode second connecting portion and the second power electrode second connecting portion be equipped with to
The fixed connecting hole with bolt cooperation.
Further, the first power electrode second connecting portion includes second connecting portion main body, and is connected from second
The outwardly extending second auxiliary interconnecting piece in portion side, the connecting hole setting is on the second auxiliary interconnecting piece.
Further, the first power electrode second connecting portion is sheet metal, the sheet metal and the first power electrode main body one
It is body formed, first the first connecting hole of power electrode and first the second connecting hole of power electrode are provided on sheet metal；Second power
Electrode second connecting portion is the two panels sheet metal extended from two opposite sides of the second power electrode main body, the two panels metal
Piece is each provided with second the first connecting hole of power electrode and second the second connecting hole of power electrode.
A kind of power module with gap bridge conductive layer provided by the invention, comprising: the first power electrode, the second power electricity
Pole, the first insulating substrate, output electrode, second electrode conductive layer, be arranged on the first insulating substrate and with the first power electrode
First bridge arm conductive layer of electrical connection, the first bridge arm power chip being arranged on the first bridge arm conductive layer, setting are exhausted first
The second bridge arm conductive layer being electrically connected on edge substrate and with output electrode, the second bridge arm function being arranged on the second bridge arm conductive layer
Rate chip, the second bridge arm power chip are electrically connected by second electrode conductive layer with the second power electrode；First bridge arm mistake
Bridge conductive layer lamination between the first bridge arm conductive layer and second electrode conductive layer is arranged, and bridges the first bridge arm power chip and the
Two bridge arm conductive layers.Compared with prior art, there is lower parasitic inductance.
Detailed description of the invention
Fig. 1 is a kind of circuit diagram of existing power module；
Fig. 2 is the circuit diagram of existing another power module；
Fig. 3 is a kind of unfolding assumption diagram of power module embodiment one with gap bridge conductive layer provided by the invention；
Fig. 4 is that structure chart is cutd open in a kind of side of power module embodiment one with gap bridge conductive layer provided by the invention；
Fig. 5 is a kind of unfolding assumption diagram of power module embodiment two with gap bridge conductive layer provided by the invention；
Fig. 6 is that structure chart is cutd open in a kind of side of power module embodiment two with gap bridge conductive layer provided by the invention；
Fig. 7 is a kind of unfolding assumption diagram of power module embodiment three with gap bridge conductive layer provided by the invention；
Fig. 8 is that structure chart is cutd open in a kind of side of power module embodiment three with gap bridge conductive layer provided by the invention；
Fig. 9 is a kind of structure chart of power module example IV with gap bridge conductive layer provided by the invention；
Figure 10 is a kind of structure chart of power module embodiment five with gap bridge conductive layer provided by the invention.
Specific embodiment
The embodiment of the present invention is described in detail with reference to the accompanying drawing, it should be understood that specific implementation described herein
Example is only used to explain the present invention, is not intended to limit the present invention.
A kind of power module with gap bridge conductive layer as shown in Figures 3 to 10, comprising: the first power electrode 100,
Two power electrodes 200, the first insulating substrate 12, second electrode conductive layer 24, are arranged on the first insulating substrate output electrode 11
And the first bridge arm conductive layer 14 being electrically connected with the first power electrode, the first bridge arm power being arranged on the first bridge arm conductive layer
Chip 15, the first bridge arm gap bridge conductive layer 22, the second bridge arm for being arranged on the first insulating substrate and being electrically connected with output electrode
Conductive layer 18, the second bridge arm power chip 19 being arranged on the second bridge arm conductive layer, the second bridge arm power chip pass through
Second electrode conductive layer is electrically connected with the second power electrode；First bridge arm gap bridge conductive layer is in the first bridge arm conductive layer and the second electricity
Lamination is arranged between the conductive layer of pole, bridges the first bridge arm power chip and the second bridge arm conductive layer.
Specifically, in certain embodiments, the power module further include: be connected to the first bridge arm power chip and first
The first bridge arm conductive column 16 between bridge arm gap bridge conductive layer and it is connected to the first bridge arm gap bridge conductive layer and the second bridge arm is led
Bridging conductive column 17 between electric layer.
Specifically, in certain embodiments, the power module further include: be connected to second electrode conductive layer and the second bridge
The second bridge arm conductive column 20 between arm power chip.
Specifically, in certain embodiments, the power module further include: the second insulated substrate 21, the second insulated substrate
Including the first surface opposite with the first insulating substrate, second electrode conductive layer 24 is covered on the first surface, second electrode
Conductive layer is equipped with the first bridge arm gap bridge insulation island 33, and the setting of the first bridge arm gap bridge conductive layer 22 is passed a bridge exhausted in the first bridge arm
In edge island.
Specifically, in certain embodiments, the first bridge arm conductive layer 14, the first bridge arm gap bridge conductive layer 22, first
Bridge arm pass a bridge insulation island, the first bridge arm power chip 15 be it is multiple, the grouping of the first bridge arm power chip is arranged corresponding thereto
On each first bridge arm conductive layer answered, every group of first bridge arm power chip is electrically connected with corresponding first bridge arm gap bridge conductive layer respectively
It connects, each first bridge arm conductive layer passes through fuse 31 respectively and is electrically connected with the first power electrode 100.Core occurs in power module
When piece short circuit, fuse fuses, and can play a protective role to entire module.
Specifically, in certain embodiments, the fuse is binding line.
Specifically, in certain embodiments, the fuse is the line-shaped conductive layer being arranged on the first insulating substrate.
Specifically, in certain embodiments, the first bridge arm gap bridge insulation island, is opened up logical by second electrode conductive layer
Hole and first surface cooperation are constituted.
Specifically, in certain embodiments, the power module further include: third insulating substrate 33, first bridge arm
Gap bridge insulation island, is made of the third insulating substrate being arranged on second electrode conductive layer.Wherein, third insulating substrate can root
According to actual needs, one or more is set；Setting muti-piece third insulating substrate can be superimposed bring stress to avoid substrate and ask
Topic.
Specifically, in certain embodiments, the power module further includes being set on the first insulating substrate and each first
First bridge arm of bridge arm power chip control terminal electrical connection controls conductive layer, and is set on the first insulating substrate and each second
Second bridge arm of bridge arm power chip control terminal electrical connection controls conductive layer.To conduct control the first bridge arm power chip and
The control signal of second bridge arm power chip turn-on and turn-off.
Specifically, in certain embodiments, the first bridge arm power chip and the second bridge arm power chip include power
Metal-oxide-semiconductor and anti-parallel diodes.
Specifically, in certain embodiments, the first bridge arm power chip and the second bridge arm power chip include IGBT
And anti-parallel diodes.
Specifically, in certain embodiments, as shown in figure 9, the first power electrode includes 101 He of the first power electrode main body
First power electrode first connecting portion 102, the second power electrode include the second power electrode main body 201 and the second power electrode the
One interconnecting piece 202, the first power electrode main body 101 pass through the first power electrode first connecting portion 102 and the first bridge arm conductive layer
Electrical connection, the second power electrode main body 201 are electrically connected by the second power electrode first connecting portion 202 with second electrode conductive layer
It connects, the first power electrode main body and the second power electrode main body are sheet and stacking is spaced apart, the first power electrode main body
Equipped with extending along first direction to outside power module, and the first power electrode second beyond the second power electrode body rim connects
Socket part；Second power electrode main body is equipped with the second function for extending outwardly from its side, and exceeding the first power electrode body rim
Rate electrode second connecting portion 203.In a particular application, the first power electrode main body, the first power electrode first connecting portion, first
Power electrode second connecting portion generallys use piece of metal piece and is made into integration through over mechanical processing, can also be according to actual need
It to be made of multi-sheet structure connection；Second power electrode main body, the second power electrode first connecting portion, the second power electrode
Two interconnecting pieces generally use piece of metal piece and are made into integration through over mechanical processing, can also use multi-disc according to the actual needs
Structure connection is made；Wherein, the side of the second power electrode main body is referring to definition, i.e. the second power electrode with first direction
The part of main body two sides in a first direction, can be referred to as the side of the second power electrode main body.
Specifically, in certain embodiments, the first power electrode second connecting portion 103 and the second power electrode second
Interconnecting piece 203 is equipped with to the connecting hole fixed with bolt cooperation.
Specifically, in certain embodiments, as shown in Figure 10, the first power electrode second connecting portion 103 includes the
Two interconnecting piece main bodys, and from the outwardly extending second auxiliary interconnecting piece in second connecting portion side, connecting hole setting is the
On two auxiliary interconnecting pieces.Second auxiliary interconnecting piece is two stretched along the first power module second connecting portion main body side direction extension
Sheet metal 1033a, 1034b, the connecting hole setting is on the second auxiliary interconnecting piece.
Specifically, in certain embodiments, the first power electrode second connecting portion 103 is sheet metal, the sheet metal and the
One power electrode main body is integrally formed, and is provided with first power electrode the first connecting hole 1031 and the first power electrode on sheet metal
Second connecting hole 1032；Second power electrode second connecting portion is to extend from two opposite sides of the second power electrode main body
Two panels sheet metal, which is each provided with second power electrode the first connecting hole 2031 and the second power electrode second
Connecting hole 2032.In a particular application, more connecting hole can also be set according to the actual needs.
When power module work is in drive current state, driving current is flowed into from the first power electrode, followed by molten
Disconnected device 31, the first bridge arm conductive layer 14, the first bridge arm power chip 15, the first bridge arm conductive column 16, the first bridge arm gap bridge electric layer
22, conductive column 17 is bridged, the second bridge arm conductive layer 18 flows out to output electrode；When power module work in freewheeling state, continue
Galvanic electricity stream is flowed into from the second power electrode, followed by second electrode conductive layer 24, the second bridge arm conductive column 20, the second bridge arm function
Rate chip 19, the second bridge arm conductive layer 18 flow out to output electrode.
The above description is only a preferred embodiment of the present invention, is not intended to limit the scope of the invention, all utilizations
Equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content is applied directly or indirectly in other correlations
Technical field, be included within the scope of the present invention.
Claims (16)
1. a kind of power module with gap bridge conductive layer, comprising: the first power electrode, the second power electrode, the first insulation base
Plate, output electrode, second electrode conductive layer, the first bridge for being arranged on the first insulating substrate and being electrically connected with the first power electrode
Arm conductive layer, the first bridge arm power chip being arranged on the first bridge arm conductive layer, the first bridge arm gap bridge conductive layer, setting are the
The second bridge arm conductive layer being electrically connected on one insulating substrate and with output electrode, the second bridge being arranged on the second bridge arm conductive layer
Arm power chip, the second bridge arm power chip are electrically connected by second electrode conductive layer with the second power electrode；Its feature
Be: the first bridge arm gap bridge conductive layer lamination between the first bridge arm conductive layer and second electrode conductive layer is arranged, bridging first
Bridge arm power chip and the second bridge arm conductive layer.
2. power module according to claim 1, it is characterised in that: further include being connected to the first bridge arm power chip and
The first bridge arm conductive column between one bridge arm gap bridge conductive layer and it is connected to the first bridge arm gap bridge conductive layer and the second bridge arm is led
Bridging conductive column between electric layer.
3. power module according to claim 1, it is characterised in that: further include being connected to second electrode conductive layer and second
The second bridge arm conductive column between bridge arm power chip.
4. power module according to claim 1, it is characterised in that: further include the second insulated substrate, the second insulated substrate
Including the first surface opposite with the first insulating substrate, second electrode conductive layer is covered on the first surface, and second electrode is led
Electric layer is equipped with the first bridge arm gap bridge insulation island, and the first bridge arm gap bridge conductive layer setting is on the first bridge arm gap bridge insulation island
It is interior.
5. power module according to claim 4, it is characterised in that: the first bridge arm conductive layer, the first bridge arm are passed a bridge
Conductive layer, the first bridge arm pass a bridge insulation island, the first bridge arm power chip be it is multiple, the grouping setting of the first bridge arm power chip exists
On each first bridge arm conductive layer corresponding thereto, every group of first bridge arm power chip is led with corresponding first bridge arm gap bridge respectively
Electric layer electrical connection, each first bridge arm conductive layer pass through fuse respectively and are electrically connected with the first power electrode.
6. power module according to claim 5, it is characterised in that: the fuse is binding line.
7. power module according to claim 5, it is characterised in that: the fuse is to be arranged on the first insulating substrate
Line-shaped conductive layer.
8. power module according to claim 4, it is characterised in that: the first bridge arm gap bridge insulation island, by the second electricity
Through-hole and the first surface cooperation that pole conductive layer opens up are constituted.
9. power module according to claim 4, it is characterised in that: it further include third insulating substrate, first bridge arm
Gap bridge insulation island, is made of the third insulating substrate being arranged on second electrode conductive layer.
10. power module according to claim 1, it is characterised in that: further include be set on the first insulating substrate with it is each
First bridge arm of the first bridge arm power chip control terminal electrical connection controls conductive layer, and be set on the first insulating substrate with it is each
Second bridge arm of the second bridge arm power chip control terminal electrical connection controls conductive layer.
11. a kind of power module according to claim 1, it is characterised in that: the first bridge arm power chip and second
Bridge arm power chip includes power MOS pipe and anti-parallel diodes.
12. a kind of power module according to claim 1, it is characterised in that: the first bridge arm power chip and second
Bridge arm power chip includes IGBT and anti-parallel diodes.
13. power module according to claim 1, it is characterised in that: the first power electrode includes the first power electrode master
Body and the first power electrode first connecting portion, the second power electrode include the second power electrode main body and the second power electrode first
Interconnecting piece, the first power electrode main body are electrically connected by the first power electrode first connecting portion with the first bridge arm conductive layer, and second
Power electrode main body is electrically connected by the second power electrode first connecting portion with second electrode conductive layer, the first power electrode main body
With the second power electrode main body be sheet and stacking is spaced apart, and the first power electrode main body is equipped with along first direction to power
Extend outside module, and exceeds the first power electrode second connecting portion of the second power electrode body rim；Second power electrode master
Body is equipped with the second power electrode second connecting portion for extending outwardly from its side, and exceeding the first power electrode body rim.
14. power module according to claim 13, it is characterised in that: the first power electrode second connecting portion and
Two power electrode second connecting portions are equipped with to the connecting hole fixed with bolt cooperation.
15. power module according to claim 14, it is characterised in that: the first power electrode second connecting portion includes
Second connecting portion main body, and from the outwardly extending second auxiliary interconnecting piece of second connecting portion body side, the connecting hole is set
It sets on the second auxiliary interconnecting piece.
16. power module according to claim 13, it is characterised in that: the first power electrode second connecting portion is metal
Piece, the sheet metal and the first power electrode main body are integrally formed, be provided on sheet metal first the first connecting hole of power electrode and
First the second connecting hole of power electrode；Second power electrode second connecting portion is two sides opposite from the second power electrode main body
While the two panels sheet metal extended, which is each provided with second the first connecting hole of power electrode and the second power electrode
Second connecting hole.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811273654 | 2018-10-14 | ||
| CN2018112736546 | 2018-10-14 |
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| CN109560066A true CN109560066A (en) | 2019-04-02 |
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| CN201811544684.6A Pending CN109560066A (en) | 2018-10-14 | 2018-12-17 | A kind of power module with gap bridge conductive layer |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335864A (en) * | 2019-06-22 | 2019-10-15 | 深圳市奕通功率电子有限公司 | A kind of power modules |
| CN111211114A (en) * | 2020-03-01 | 2020-05-29 | 深圳市奕通功率电子有限公司 | A kind of fast power module and power module |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545305A (en) * | 2013-11-01 | 2014-01-29 | 徐员娉 | Power module |
| CN105374811A (en) * | 2015-11-23 | 2016-03-02 | 扬州国扬电子有限公司 | Power module |
| CN107170714A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of low stray inductance power model of low stray inductance power model and two-side radiation |
| CN107369657A (en) * | 2017-08-30 | 2017-11-21 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of multizone laid out in parallel |
| CN107634052A (en) * | 2017-08-30 | 2018-01-26 | 扬州国扬电子有限公司 | A kind of parallel installation electrode combination and power model |
-
2018
- 2018-12-17 CN CN201811544684.6A patent/CN109560066A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103545305A (en) * | 2013-11-01 | 2014-01-29 | 徐员娉 | Power module |
| CN105374811A (en) * | 2015-11-23 | 2016-03-02 | 扬州国扬电子有限公司 | Power module |
| CN107170714A (en) * | 2017-06-14 | 2017-09-15 | 扬州国扬电子有限公司 | A kind of low stray inductance power model of low stray inductance power model and two-side radiation |
| CN107369657A (en) * | 2017-08-30 | 2017-11-21 | 扬州国扬电子有限公司 | A kind of two-side radiation power model of multizone laid out in parallel |
| CN107634052A (en) * | 2017-08-30 | 2018-01-26 | 扬州国扬电子有限公司 | A kind of parallel installation electrode combination and power model |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110335864A (en) * | 2019-06-22 | 2019-10-15 | 深圳市奕通功率电子有限公司 | A kind of power modules |
| CN111211114A (en) * | 2020-03-01 | 2020-05-29 | 深圳市奕通功率电子有限公司 | A kind of fast power module and power module |
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Address after: 518000 Zhenyeluan Valley, Baohe Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province, 3 buildings, 2 units, 10L Applicant after: Shenzhen Yitong Power Electronics Co., Ltd. Address before: 518000 Zhenyeluan Valley, Baohe Road, Baolong Street, Longgang District, Shenzhen City, Guangdong Province, 3 buildings, 2 units, 10L Applicant before: Shenzhen Huicheng Rate Electronics Co., Ltd. |