CN111180571A - A structure suitable for measuring piezoelectric strain constant of piezoelectric thin film d33 and its preparation process - Google Patents
A structure suitable for measuring piezoelectric strain constant of piezoelectric thin film d33 and its preparation process Download PDFInfo
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- CN111180571A CN111180571A CN201911314162.1A CN201911314162A CN111180571A CN 111180571 A CN111180571 A CN 111180571A CN 201911314162 A CN201911314162 A CN 201911314162A CN 111180571 A CN111180571 A CN 111180571A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 19
- 239000010409 thin film Substances 0.000 title claims abstract description 9
- 239000010408 film Substances 0.000 claims abstract description 37
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- 239000000758 substrate Substances 0.000 claims abstract description 22
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims abstract description 20
- 238000012360 testing method Methods 0.000 claims abstract description 15
- 239000007769 metal material Substances 0.000 claims abstract description 12
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000001755 magnetron sputter deposition Methods 0.000 claims abstract description 10
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 229910052751 metal Inorganic materials 0.000 claims abstract description 4
- 239000002184 metal Substances 0.000 claims abstract description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 15
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 229910052697 platinum Inorganic materials 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000005452 bending Methods 0.000 claims description 3
- 238000005259 measurement Methods 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 238000005516 engineering process Methods 0.000 claims description 2
- 238000005530 etching Methods 0.000 abstract description 8
- 238000000206 photolithography Methods 0.000 abstract description 3
- 239000004020 conductor Substances 0.000 abstract description 2
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 2
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical class [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000001039 wet etching Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/872—Interconnections, e.g. connection electrodes of multilayer piezoelectric or electrostrictive devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/32—Additional lead-in metallisation on a device or substrate, e.g. additional pads or pad portions, lines in the scribe line, sacrificed conductors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/063—Forming interconnections, e.g. connection electrodes of multilayered piezoelectric or electrostrictive parts
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
- H10N30/067—Forming single-layered electrodes of multilayered piezoelectric or electrostrictive parts
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Abstract
本发明涉及一种适用于压电薄膜d33压电应变常数测量的结构及其制备工艺，属于微光机电系统技术领域。该结构为采用脉冲直流反应磁控溅射的方式制备的压电薄膜结构，该结构包括有衬底低阻硅、下电极层、背部电极层、氮化铝压电薄膜层和上电极层；下电极层采用与硅和氮化铝晶格系数相失配度较小的金属材料进行制备，上电极层采用导电性良好、成本低的金属。与传统方法在普通硅片或氧化硅上制备的结构相比，本发明新的测试结构在测试时，衬底低阻硅是导电材料，电荷信号可直接通过衬底低阻硅引出，因此仅需一步光刻和湿法腐蚀，大大简化了测试结构的制作工艺，同时避免了由光刻和刻蚀步骤中使用的显影液、刻蚀气体对压电薄膜及电极带来的损伤，大幅提升样品良率。
The invention relates to a structure suitable for measuring piezoelectric strain constant of piezoelectric thin film d33 and a preparation process thereof, belonging to the technical field of micro-optical electromechanical systems. The structure is a piezoelectric thin film structure prepared by means of pulsed DC reactive magnetron sputtering, and the structure includes a substrate of low-resistance silicon, a lower electrode layer, a back electrode layer, an aluminum nitride piezoelectric thin film layer and an upper electrode layer; The lower electrode layer is prepared by using a metal material with a smaller degree of mismatch with the lattice coefficients of silicon and aluminum nitride, and the upper electrode layer is made of a metal with good conductivity and low cost. Compared with the structures prepared by traditional methods on ordinary silicon wafers or silicon oxides, when the new test structure of the present invention is tested, the low-resistance silicon on the substrate is a conductive material, and the charge signal can be directly drawn out through the low-resistance silicon on the substrate. One-step photolithography and wet etching are required, which greatly simplifies the fabrication process of the test structure, and at the same time avoids the damage to the piezoelectric film and electrodes caused by the developer and etching gas used in the photolithography and etching steps, greatly improving Sample yield.
Description
Technical Field
The invention belongs to the technical field of micro-optical-electro-mechanical systems, and relates to a structure suitable for measuring a piezoelectric strain constant of a piezoelectric film d33 and a preparation process thereof.
Background
The piezoelectric film material has the characteristics of small volume, easy integration and the like, is widely used for manufacturing bulk acoustic wave devices, surface acoustic wave devices and on-chip integrated systems, and is widely concerned at home and abroad. MEMS devices using piezoelectric thin film fabrication as a core technology have been widely used in the fields of sensors, resonators, energy collectors, and the like.
The longitudinal piezoelectric strain constant d33 is an important performance parameter of the film, and not only determines the performance of the piezoelectric material, but also directly influences the performance parameters such as the electromechanical coupling coefficient of the MEMS device. When the traditional d33 test structure is manufactured, the piezoelectric film and the upper electrode are patterned on a piezoelectric film substrate provided with the upper electrode and the lower electrode through two times of photoetching and corrosion, and the exposed lower electrode is led to the back of the substrate for measurement, so that the steps are complex, the cost is high, and the piezoelectric film and the electrodes are damaged by an etching process. Therefore, it is imperative to find a new structure capable of measuring the d33 coefficient of the piezoelectric film.
Disclosure of Invention
In view of the above, the present invention provides a structure suitable for measuring a piezoelectric strain constant of a piezoelectric film d33 and a preparation process thereof, wherein when the piezoelectric film prepared by the structure is applied to a d33 longitudinal piezoelectric strain constant test, only one step of photolithography and etching process is required, no additional lead is required, a manufacturing process of a test sample can be greatly simplified, and damage to the piezoelectric film and an electrode in an etching process is also avoided.
In order to achieve the purpose, the invention provides the following technical scheme:
a structure suitable for measuring a piezoelectric strain constant of a piezoelectric film d33 is a piezoelectric film structure prepared by adopting a pulse direct current reaction magnetron sputtering mode and comprises a substrate low-resistance silicon, a lower electrode layer, an aluminum nitride piezoelectric film layer and an upper electrode layer.
Further, the lower electrode layer is prepared by using a metal material with a small lattice coefficient mismatch degree with silicon and aluminum nitride, including but not limited to molybdenum and platinum.
Further, the upper electrode layer is made of a metal with good conductivity and low cost, including but not limited to aluminum.
The invention also provides a structure preparation process suitable for measuring the piezoelectric strain constant of the piezoelectric film d33, which is prepared by adopting a pulse direct current reactive magnetron sputtering mode, wherein the prepared piezoelectric film structure consists of a substrate low-resistance silicon, a lower electrode layer, a back electrode layer, an aluminum nitride piezoelectric film layer and an upper electrode layer, the lower electrode layer is prepared by adopting a metal material with small lattice coefficient mismatching degree with silicon and aluminum nitride, including but not limited to molybdenum and platinum, and the upper electrode layer is prepared by adopting a metal material with good conductivity and low cost, including but not limited to aluminum.
Further, the preparation process takes a low-resistance silicon substrate as a substrate material, realizes the preparation of the device through an MEMS processing process, and specifically comprises the following steps:
s1: the substrate type is N (100), 4-inch silicon chip, the thickness is 500um, and the resistivity is less than 0.1 omega cm;
s2: growing a lower electrode Ti/Pt with the thickness of 100-200 nm;
s3: growing an aluminum nitride layer of the piezoelectric thin film layer by adopting a pulse direct-current magnetron sputtering mode, wherein the thickness of the aluminum nitride layer is about 1 mu m;
s4: growing an upper electrode Al, photoetching and patterning;
s5: and (4) scribing by using a scribing machine, wherein the upper electrode is protected by photoresist to avoid damage during scribing, and in order to avoid the influence of sample bending on a test result, the sample size is in accordance with the national standard recommended size (20mm by 5mm-20mm by 10 mm).
The quasi-static d33 piezoelectric tester is used to place the sample between the upper and lower electrodes of the tester, and the piezoelectric coefficient of the sample can be measured.
The invention has the beneficial effects that: compared with the structure prepared on a common silicon wafer or silicon oxide by the traditional method, the technical scheme provided by the invention has the advantages that when the novel test structure is used for testing, the substrate low-resistance silicon is a conductive material, and a charge signal can be directly led out through the substrate low-resistance silicon, so that a lower electrode does not need to be led to a back electrode, the manufacturing process of the test structure is greatly simplified, and meanwhile, the damage to the piezoelectric film and the electrode caused by developing solution and etching gas used in the photoetching and etching steps is avoided.
Additional advantages, objects, and features of the invention will be set forth in part in the description which follows and in part will become apparent to those having ordinary skill in the art upon examination of the following or may be learned from practice of the invention. The objectives and other advantages of the invention may be realized and attained by the means of the instrumentalities and combinations particularly pointed out hereinafter.
Drawings
For the purposes of promoting a better understanding of the objects, aspects and advantages of the invention, reference will now be made to the following detailed description taken in conjunction with the accompanying drawings in which:
FIG. 1 is a schematic cross-sectional view of a novel piezoelectric thin film test structure according to the present invention;
FIG. 2 is a flow chart of the preparation process of the present invention.
Detailed Description
The following detailed description of specific embodiments of the invention refers to the accompanying drawings.
Fig. 1 is a schematic cross-sectional view of a novel piezoelectric film test structure, and as shown in the figure, the technical scheme of the invention provides a structure suitable for measuring a piezoelectric strain constant of a piezoelectric film d33, wherein the piezoelectric film structure is prepared by adopting a pulse direct-current reactive magnetron sputtering mode and comprises a substrate low-resistance silicon, a lower electrode layer, an aluminum nitride piezoelectric film layer and an upper electrode layer.
The lower electrode layer is made of a metal material with a small lattice coefficient mismatch degree with silicon and aluminum nitride, and the metal material includes but is not limited to molybdenum and platinum. The upper electrode layer is made of a metal with good conductivity and low cost, including but not limited to aluminum.
When the piezoelectric film prepared by the structure is applied to d33 longitudinal piezoelectric strain constant test, only a single-step photoetching and corrosion process is needed, no extra lead is needed, the manufacturing process of a test sample can be greatly simplified, and the damage of the etching process to the piezoelectric film and the electrode is also avoided.
Fig. 2 is a flow chart of a preparation process of the present invention, and as shown in the figure, the present invention further provides a structure preparation process suitable for piezoelectric strain constant measurement of a piezoelectric film d33, wherein the preparation process is performed by a pulsed direct current reactive magnetron sputtering method, the prepared piezoelectric film structure is composed of a substrate low resistance silicon, a lower electrode layer, a back electrode layer, an aluminum nitride piezoelectric film layer and an upper electrode layer, the lower electrode layer is prepared by a metal material with a small lattice coefficient mismatching degree with silicon and aluminum nitride, including but not limited to molybdenum and platinum, and the upper electrode layer is prepared by a metal material with good conductivity and low cost, including but not limited to aluminum.
The preparation process takes a low-resistance silicon substrate as a substrate material, realizes the preparation of a device through an MEMS processing process, and specifically comprises the following steps:
s1: the substrate type is N (100), 4-inch silicon chip, the thickness is 500um, and the resistivity is less than 0.1 omega cm;
s2: growing a lower electrode Ti/Pt with the thickness of 100-200 nm;
s3: growing an aluminum nitride layer of the piezoelectric thin film layer by adopting a pulse direct-current magnetron sputtering mode, wherein the thickness of the aluminum nitride layer is about 1 mu m;
s4: growing an upper electrode Al, photoetching and patterning;
s5: and (4) scribing by using a scribing machine, wherein the upper electrode is protected by photoresist to avoid damage during scribing, and in order to avoid the influence of sample bending on a test result, the sample size is in accordance with the national standard recommended size (20mm by 5mm-20mm by 10 mm).
The quasi-static d33 piezoelectric tester is used to place the sample between the upper and lower electrodes of the tester, and the piezoelectric coefficient of the sample can be measured.
Finally, the above embodiments are only intended to illustrate the technical solutions of the present invention and not to limit the present invention, and although the present invention has been described in detail with reference to the preferred embodiments, it will be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions, and all of them should be covered by the claims of the present invention.
Claims (5)
1. A structure suitable for piezoelectric strain constant measurement of a piezoelectric film d33, which is characterized in that: the structure is a piezoelectric film structure prepared by adopting a pulse direct current reactive magnetron sputtering mode, and comprises a substrate low-resistance silicon, a lower electrode layer, an aluminum nitride piezoelectric film layer and an upper electrode layer.
2. The structure of claim 1, wherein the structure is suitable for measuring the piezoelectric strain constant of the piezoelectric film d33, and comprises: the lower electrode layer is prepared by adopting a metal material with small lattice coefficient mismatching degree with silicon and aluminum nitride, and the metal material comprises but is not limited to molybdenum and platinum.
3. The structure of claim 1, wherein the structure is suitable for measuring the piezoelectric strain constant of the piezoelectric film d33, and comprises: the upper electrode layer is made of a metal with good conductivity and low cost, including but not limited to aluminum.
4. A structure preparation technology suitable for measuring piezoelectric strain constant of a piezoelectric film d33 is characterized by comprising the following steps: the preparation process adopts a pulse direct current reactive magnetron sputtering mode for preparation, the prepared piezoelectric film structure consists of substrate low-resistance silicon, a lower electrode layer, a back electrode layer, an aluminum nitride piezoelectric film layer and an upper electrode layer, the lower electrode layer is prepared by adopting metal materials with small lattice coefficient mismatching degree with silicon and aluminum nitride, including but not limited to molybdenum and platinum, and the upper electrode layer is prepared by adopting metal materials with good conductivity and low cost, including but not limited to aluminum.
5. The process for preparing a structure suitable for measuring the piezoelectric strain constant of the piezoelectric film d33 as claimed in claim 4, wherein: the preparation process takes a low-resistance silicon substrate as a substrate material, realizes the preparation of the device through an MEMS processing process, and specifically comprises the following steps:
s1: the substrate type is N (100), 4-inch silicon chip, the thickness is 500um, and the resistivity is less than 0.1 omega cm;
s2: growing a lower electrode Ti/Pt with the thickness of 100-200 nm;
s3: growing an aluminum nitride layer of the piezoelectric thin film layer by adopting a pulse direct-current magnetron sputtering mode, wherein the thickness of the aluminum nitride layer is about 1 mu m;
s4: growing an upper electrode Al, photoetching and patterning;
s5: and (4) scribing by using a scribing machine, wherein the upper electrode is protected by photoresist to avoid damage during scribing, and in order to avoid the influence of sample bending on a test result, the sample size is in accordance with the national standard recommended size (20mm by 5mm-20mm by 10 mm).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911314162.1A CN111180571A (en) | 2019-12-18 | 2019-12-18 | A structure suitable for measuring piezoelectric strain constant of piezoelectric thin film d33 and its preparation process |
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| CN201911314162.1A CN111180571A (en) | 2019-12-18 | 2019-12-18 | A structure suitable for measuring piezoelectric strain constant of piezoelectric thin film d33 and its preparation process |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114878605A (en) * | 2022-03-31 | 2022-08-09 | 中国科学院上海微系统与信息技术研究所 | A device and method for comprehensive characterization of piezoelectric properties of high-flux thin films |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2308072Y (en) * | 1997-12-19 | 1999-02-17 | 中国科学院声学研究所 | Instrument for measuring longitudinal piezoelectric strain constant by quasi-static method |
| CN101074975A (en) * | 2007-06-25 | 2007-11-21 | 武汉科技学院 | Method for measuring thin-film piezoelectric coefficient d33 |
| CN101775584A (en) * | 2010-01-08 | 2010-07-14 | 湖北大学 | Preparation method of c-axis inclined AlN thin film with homogeneous buffer layer |
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2019
- 2019-12-18 CN CN201911314162.1A patent/CN111180571A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2308072Y (en) * | 1997-12-19 | 1999-02-17 | 中国科学院声学研究所 | Instrument for measuring longitudinal piezoelectric strain constant by quasi-static method |
| CN101074975A (en) * | 2007-06-25 | 2007-11-21 | 武汉科技学院 | Method for measuring thin-film piezoelectric coefficient d33 |
| CN101775584A (en) * | 2010-01-08 | 2010-07-14 | 湖北大学 | Preparation method of c-axis inclined AlN thin film with homogeneous buffer layer |
Non-Patent Citations (1)
| Title |
|---|
| MENG ZHANG 等: ""Research on the Piezoelectric Properties of AlN Thin Films for MEMS Applications"", 《MICROMACHINES》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114878605A (en) * | 2022-03-31 | 2022-08-09 | 中国科学院上海微系统与信息技术研究所 | A device and method for comprehensive characterization of piezoelectric properties of high-flux thin films |
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Application publication date: 20200519 |