CN111106081A - Near-junction cooling device based on thin liquid film evaporation - Google Patents
Near-junction cooling device based on thin liquid film evaporation Download PDFInfo
- Publication number
- CN111106081A CN111106081A CN202010027529.8A CN202010027529A CN111106081A CN 111106081 A CN111106081 A CN 111106081A CN 202010027529 A CN202010027529 A CN 202010027529A CN 111106081 A CN111106081 A CN 111106081A
- Authority
- CN
- China
- Prior art keywords
- outlet
- area
- flow channel
- liquid
- storage tank
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 108
- 230000008020 evaporation Effects 0.000 title claims abstract description 46
- 238000001704 evaporation Methods 0.000 title claims abstract description 46
- 238000001816 cooling Methods 0.000 title claims abstract description 39
- 238000003860 storage Methods 0.000 claims abstract description 45
- 239000012530 fluid Substances 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 41
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 36
- 239000010703 silicon Substances 0.000 claims abstract description 36
- 239000011521 glass Substances 0.000 claims abstract description 30
- 230000008859 change Effects 0.000 claims description 11
- 239000000463 material Substances 0.000 claims description 11
- 239000007769 metal material Substances 0.000 claims description 2
- 150000003377 silicon compounds Chemical class 0.000 claims description 2
- 239000002826 coolant Substances 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 21
- 238000012546 transfer Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 230000004907 flux Effects 0.000 abstract 1
- 230000017525 heat dissipation Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 238000009826 distribution Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 229910002601 GaN Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- SBYXRAKIOMOBFF-UHFFFAOYSA-N copper tungsten Chemical compound [Cu].[W] SBYXRAKIOMOBFF-UHFFFAOYSA-N 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000004134 energy conservation Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 230000001360 synchronised effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
Abstract
一种基于薄液膜蒸发的近结冷却装置，属于半导体器件的冷却技术领域。包括玻璃盖板(9)和硅基板(8)组成，其中玻璃盖板(9)包括流体入口(1)和蒸发区域(7)组成，硅基板(8)由入口蓄液槽(2)，流道区域(3)，出口蓄液槽(4)，出口限高区域(5)和流体出口(6)组成。玻璃盖板(9)和硅基板(8)采用阳极键合技术封装完成，以确保蒸发区域(5)与流道区域(3)完整衔接。本发明在半导体器件的近结区域，利用液体薄液膜蒸发原理，实现对半导体器件结温的有效降低，具有换热系数大，蒸发效率高，满足高热流密度，多热区同时存在的运行要求，为半导体器件的安全稳定运行提高一种新思路。
A near-junction cooling device based on thin liquid film evaporation belongs to the technical field of cooling of semiconductor devices. It comprises a glass cover plate (9) and a silicon substrate (8), wherein the glass cover plate (9) comprises a fluid inlet (1) and an evaporation area (7), and the silicon substrate (8) consists of an inlet liquid storage tank (2), The flow channel area (3), the outlet liquid storage tank (4), the outlet height limit area (5) and the fluid outlet (6) are composed. The glass cover plate (9) and the silicon substrate (8) are packaged by anodic bonding technology to ensure that the evaporation area (5) and the flow channel area (3) are completely connected. In the near-junction region of the semiconductor device, the invention utilizes the principle of liquid thin liquid film evaporation to effectively reduce the junction temperature of the semiconductor device, and has the advantages of large heat transfer coefficient, high evaporation efficiency, high heat flux density, and simultaneous operation of multiple hot zones. requirements, and improve a new idea for the safe and stable operation of semiconductor devices.
Description
Technical Field
The invention belongs to the technical field of near junction cooling of semiconductor device substrates, and relates to a cooling device utilizing evaporation heat transfer of a liquid film.
Background
Conventional silicon-based semiconductor devices typically generate a high temperature of up to 150 c and are bonded to a thermal spreader using interfacial thermal bonding materials for cooling purposes. With the advancement of technology, wide bandgap semiconductor devices, such as: metal Oxide Semiconductor Field Effect Transistors (MOSFET), gallium nitride high electron mobility transistors (GaN HEMT), may generate high temperature over 300 deg.C, and the heat flow density of the whole chip region reachesTo 100 to 250W/cm2And on the sub-millimeter hot area of the near junction area, the heat flow reaches even 1000W/cm2Efficient heat dissipation has become a serious impediment to limiting the development of semiconductor devices. However, the traditional heat dissipation method cannot meet the cooling requirement of emerging electronic devices, so that a heat dissipation cooling method meeting high heat flow density and high heat transfer coefficient is urgently needed, and the purposes of reducing the junction temperature of the device and prolonging the service life of the semiconductor device are achieved.
At present, the research on the heat dissipation and cooling of semiconductor devices at home and abroad includes: soaking cold plate cooling, heat pipe cooling, thermoelectric refrigeration cooling, microchannel heat sink cooling, and integral cooler, however, these methods need to conduct the heat of the hot zone to the heat sink through the high thermal conductivity material, so the existence of the interface thermal resistance is difficult to avoid. A novel heat dissipation cooling device cools in a near-junction area of a hot area, and heat is directly conducted to the heat dissipation area, so that application of interface materials is omitted. The invention utilizes the high heat exchange coefficient of the evaporation phase change of the thin liquid film of the working medium to rapidly finish the heat dissipation, and simultaneously utilizes the sensible heat rise of the working medium to take away part of the heat, thereby ensuring that the temperature is maintained in a reasonable interval.
Aiming at the distribution of a plurality of hot areas, a plurality of microchannels are connected in parallel and vertically correspond to the plurality of hot areas, so that liquid is uniformly distributed in each area, and meanwhile, the heat dissipation and cooling are efficiently finished by utilizing the principle of evaporation phase change of a liquid thin liquid film and a higher heat exchange coefficient, so that the effect of reducing junction temperature is achieved.
Disclosure of Invention
The invention aims to provide a novel near-junction cooling device based on thin liquid film evaporation, which is used for solving the problems of large heat flow density and over-high junction temperature of a new semiconductor device and providing a reliable evaporation cooling means for safe operation of the new semiconductor device.
The invention designs a near-junction cooling device based on thin liquid film evaporation, which is characterized in that: direct cooling is carried out in a near-junction area of a heat source, so that the occurrence of contact thermal resistance is avoided, and the flow of the whole fluid working medium is shown in figure 1. The glass substrate comprises a glass cover plate (9) and a silicon substrate (8), wherein the glass cover plate (9) consists of a fluid inlet (1) and an evaporation area (7) which are all through holes, the fluid inlet (1) is connected with external fluid supply, the center of the glass substrate (9) is the evaporation area (7) without any glass cover, and gas is convenient to evaporate and overflow;
the silicon substrate (8) comprises an inlet reservoir (2), a flow channel region (3), an outlet reservoir (4), an outlet height-limiting region (5) and a fluid outlet (6), namely, the area of the rectangular area at the center of the upper surface of the silicon substrate (8) is a flow channel area (3), a plurality of parallel thin flow channel grooves (31) are etched in the flow channel area (3), an inlet liquid storage tank (2) is etched on one side of a flow channel region (3) on the upper surface of a silicon substrate (8), an outlet liquid storage tank (4) is etched on the other side of the flow channel region, a thin flow channel groove (31) is used for communicating the inlet liquid storage tank (2) with the outlet liquid storage tank (4), a communicated inlet tank is etched on one end of the inlet liquid storage tank (2) and is communicated with a fluid inlet (1) in a vertically opposite mode, one end of the outlet liquid storage tank (4) is corroded with a groove of the communicated outlet height limiting area (5), and the groove of the outlet height limiting area (5) is formed into a through groove from the side surface of the silicon substrate (8) to form a fluid outlet (6); the inlet groove and the outlet height-limiting area (5) are positioned on the opposite corners of the rectangular upper surface of the silicon substrate (8); the inlet liquid storage tank (2), the outlet liquid storage tank (4) and the thin runner groove (31) have the same depth, namely the same height, and the depth or the height of the groove of the outlet height limiting area (5) is smaller than or higher than the depth or the height of the outlet liquid storage tank (4);
the evaporation area (7) corresponds to the upper positive phase and the lower positive phase of the flow channel area (3), and the thin liquid film evaporation occurs at the position; the flow channel area (3) is communicated with the inlet liquid storage tank (2) and the outlet liquid storage tank (4), and fluid passes through the inlet liquid storage tank (2), reaches the flow channel area (3), then reaches the outlet liquid storage tank (4), finally reaches the fluid outlet (6) through the outlet height limiting area (5), so that circulation in the evaporative cooling device is completed; the glass cover plate (9) and the silicon substrate (8) are packaged in an anodic bonding mode, and the flow channel region (3) is ensured to correspond to the evaporation region (7).
When the liquid flows through the flow passage area (3), part of the liquid working medium is subjected to thin liquid film evaporation phase change on the upper surface of the flow passage area (3), and part of the liquid working medium continuously flows through the outlet liquid storage tank (4), the outlet height limiting area (5) and the fluid outlet (6) and finally reaches a liquid storage tank outside the device.
The bottom surface of a glass cover plate (9) of the whole evaporative cooling device is parallel to and opposite to the upper surface of a silicon substrate (8) and is attached to the upper surface of the silicon substrate to ensure the anode bonding sealing performance, the whole device is horizontally arranged in a negative pressure cavity, a fluid inlet (1) is connected with a liquid working medium liquid storage solution through a pump, the liquid working medium flowing out of a fluid outlet (6) flows into the liquid working medium liquid storage solution, meanwhile, a gas working medium formed by phase change cools on the inner surface of the negative pressure cavity and then flows into the liquid working medium liquid storage solution, and the outer surface of the negative pressure cavity can be cooled by adopting a.
The outlet height-limited region (5) of the silicon substrate (8) is used for controlling the thickness of the liquid film in the device, and redundant fluid flows out from the upper half opening part of the outlet height-limited region (5) so as to ensure that the thickness of the liquid film is kept thin in the whole flow channel region (3). An enlarged view of a portion of the silicon substrate (8) and the exit height limiting region (5) is shown in FIG. 2. The evaporation area (7) of the glass cover plate (9) is used to emit steam, the entire glass cover plate (9) being shown in fig. 3.
In the invention, the whole evaporation cooling device is in a horizontal position, so that the thickness of a liquid film in the flow channel region (3) of the liquid working medium is kept consistent, the schematic flow temperature change diagram of the liquid working medium in the device is shown in figure 4, and the temperature of the working medium flows through the flow channel region (3) to realize temperature rise. The evaporative cooling device is provided with liquid working medium circulation power by a micropump in the system, redundant liquid still flows back to a liquid storage tank in the negative pressure cavity, evaporated gas is cooled by the wall surface of the negative pressure cavity or a constant temperature water tank and flows back into the liquid storage tank again to finish the circulation process, and as shown in figure 5, the whole device only has two ways of phase change evaporation on a flow channel area (3) and liquid flowing out from a fluid outlet (6) to discharge the working medium.
The fluid working medium can be respectively selected from FC-72, FHE-7100 or other insulating dielectric fluid, and the material of the system device can be selected from glass, silicon and silicon compounds. If the material is applied to other heat dissipation fields, high-thermal-conductivity metal materials such as copper, tungsten copper and the like can be selected as the base material.
The multiple parallel thin flow channel grooves (31) are divided into a group by adopting two relatively close parts, multiple groups of the grooves are parallel, the distance between the two thin flow channel grooves (31) in one group is 50 micrometers relatively close, the distance between the two adjacent thin flow channel grooves (31) is 120 micrometers relatively far, the width of the flow channel is 10 micrometers, and the depth of the flow channel is 40 micrometers; the outlet height-limiting zone (5) has a groove depth of 20 microns. The width of the exit height-limiting zone (5) (100 microns in the figure) is less than the width of the entrance slot (130 microns in the figure).
The invention has the following advantages and effects:
1. in the invention, the outlet height-limited area (5) is used for controlling the thickness of the fluid film, and the height of the outlet height-limited area (5) can be adjusted according to actual requirements, thereby realizing the phase change mode of thin liquid film evaporation. Meanwhile, part of liquid flows through the microchannel to take away part of heat in a sensible heat mode, and the combination of the two heat dissipation modes effectively reduces the junction temperature of the semiconductor device.
2. In the invention, the evaporation cooling device is in a horizontal position, so that the thickness of the liquid film in the flow channel region (3) is always consistent, and the temperature of a heat source is ensured to have better uniformity.
3. The invention directly cools the near-junction area of the semiconductor device, avoids the use of interface thermal bonding materials, reduces the contact thermal resistance and more efficiently finishes the heat transfer.
4. The number of the runner areas (3) can be adjusted according to the number of the hot areas, so that the synchronous control of the temperatures of the multiple hot areas is realized.
5. The flow channel areas (3) are all rectangular straight channels, pressure drop loss is reduced compared with other complex channel structures, and liquid circulation with larger flow can be completed under the same pump power, so that energy conservation is facilitated.
6. The pressure intensity of the system can be adjusted according to actual requirements, so that the saturation temperature of the working medium is influenced, and the purpose of heat exchange enhancement is achieved.
Drawings
Fig. 1 is a schematic diagram of a three-dimensional structure and a fluid flow according to the present invention.
FIG. 2 is an axial view of a silicon substrate according to the present invention.
FIG. 3 is an axial view of a glass cover plate according to the present invention.
FIG. 4 is a schematic representation of the temperature change of the fluid flow of the present invention.
FIG. 5 is a schematic diagram of the complete system and cycle of the present invention.
FIG. 6 is a graph of heat source distribution and size (in um).
Fig. 7 is a dimension diagram of a silicon substrate. (a) Top dimension view, (b) cross-sectional dimension view, (unit um).
FIG. 8 is a sectional view taken along line A-A of the overall structure of the apparatus of the present invention.
FIG. 9 is a schematic view of a specific process of the present invention.
A fluid inlet 1, an inlet liquid storage tank 2, a flow channel region 3, an outlet liquid storage tank 4, an outlet height limiting region 5, a fluid outlet 6, an evaporation region 7, a silicon substrate 8, a glass substrate 9 and a thin flow channel groove 31.
Detailed Description
The invention provides a novel near-junction cooling device based on thin liquid film evaporation, which is further described by combining the attached drawing and the application in the field of semiconductor device cooling; however, the present invention is not limited to the following examples.
The core thought of the invention is as follows: the liquid working medium generates thin liquid film evaporation in the flow channel area (3), thereby effectively reducing the junction temperature. The substrate near the heat source of the semiconductor device is directly etched, so that the use of thermal bonding materials is reduced, and thermal contact resistance is avoided. Liquid enters from a fluid inlet (1), reaches an inlet liquid storage tank (2), and then flows through a flow channel area (3), wherein a part of heat is taken away by sensible heat of fluid heating, the other part of heat is taken away by latent heat of evaporation of a thin liquid film, and the thickness of the fluid liquid film is controlled by an outlet height limiting area (5). The heated fluid flows out from the outlet fluid outlet (6) and enters the external liquid storage tank. And completing circulation, wherein the micro pump provides power for the circulation. The pressure of the whole system is controlled by an external vacuum pump.
Example 1
As shown in figure 1, the novel near-junction cooling device based on thin liquid film evaporation has the overall structure comprising a glass cover plate (9) and a silicon substrate (8), wherein the glass cover plate and the silicon substrate are identical in size and are 2500 multiplied by 800um, the thickness of the silicon substrate is 80um, the thickness of the glass cover plate is 40um, and the cross section is shown in figure 8. Since the price of the high-power semiconductor device is high, the embodiment is implemented by using a simulated heat source instead of the semiconductor device, the distribution and the size of the simulated heat source are as shown in fig. 6, the interval of the heat source is 50 or 120um, and a structure similar to that of the actual semiconductor device CGHV1J070D is selected.
The invention adopts MEMS (Micro-electro mechanical System) technology to process the base material, and the specific processing and bonding process is schematically shown in FIG. 9. In the figure, a-1 and b-1 are both initial glass and a silicon substrate, areas with different thicknesses of the silicon wafer are processed by an etching method, the glass substrate is cut by laser cutting, and the glass substrate and the silicon substrate are packaged in an anodic bonding mode. At this time, the fluid inlet 1 corresponds to the inlet section of the silicon substrate 2, and the flow channel region 3 corresponds to the evaporation region 7. In selected embodiments, the flow channel height is 40um, the inlet and outlet lengths are 160um, the widths are 130 and 100um, respectively, and the outlet restriction height is 20um, as shown in fig. 7(a) (b). Finally, the bottom simulates a heat source distribution structure by utilizing magnetron sputtering deposition to finish the manufacturing and processing of the whole test piece.
Insulating dielectric working media such as FC-72 and HFE-7100 are used as cooling working media, enter the inlet liquid storage tank 2 from the fluid inlet 1, flow through the flow channel area 3, part of liquid is heated to take away heat, as shown in figure 4, the other part of thin liquid film is evaporated to change phase to take away heat, the thickness of the liquid film can be adjusted by the outlet height limiting area 5, the temperature distribution uniformity of a bottom heat source is ensured, the junction temperature is effectively reduced in the near junction area of the semiconductor, the temperature environment requirement is met, and the service life of the device is prolonged. The whole device is arranged in a negative pressure system, the pressure intensity can be adjusted according to the actual operation condition, and the schematic diagram of the system is shown in figure 5.
In summary, the above is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention. Any modification and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (8)
1. A near knot cooling device based on thin liquid film evaporation is characterized in that: the glass substrate comprises a glass cover plate (9) and a silicon substrate (8), wherein the glass cover plate (9) consists of a fluid inlet (1) and an evaporation area (7) which are all through holes, the fluid inlet (1) is connected with external fluid supply, the center of the glass substrate (9) is the evaporation area (7) without any glass cover, and gas is convenient to evaporate and overflow;
the silicon substrate (8) comprises an inlet reservoir (2), a flow channel region (3), an outlet reservoir (4), an outlet height-limiting region (5) and a fluid outlet (6), namely, the area of the rectangular area at the center of the upper surface of the silicon substrate (8) is a flow channel area (3), a plurality of parallel thin flow channel grooves (31) are etched in the flow channel area (3), an inlet liquid storage tank (2) is etched on one side of a flow channel region (3) on the upper surface of a silicon substrate (8), an outlet liquid storage tank (4) is etched on the other side of the flow channel region, a thin flow channel groove (31) is used for communicating the inlet liquid storage tank (2) with the outlet liquid storage tank (4), a communicated inlet tank is etched on one end of the inlet liquid storage tank (2) and is communicated with a fluid inlet (1) in a vertically opposite mode, one end of the outlet liquid storage tank (4) is corroded with a groove of the communicated outlet height limiting area (5), and the groove of the outlet height limiting area (5) is formed into a through groove from the side surface of the silicon substrate (8) to form a fluid outlet (6); the inlet groove and the outlet height-limiting area (5) are positioned on the opposite corners of the rectangular upper surface of the silicon substrate (8); the inlet liquid storage tank (2), the outlet liquid storage tank (4) and the thin runner groove (31) are the same in depth, namely the height, and the depth or the height of the groove of the outlet height limiting area (5) is smaller than or higher than the depth or the height of the outlet liquid storage tank (4).
2. A near junction cooling device based on thin liquid film evaporation as claimed in claim 1, wherein: the evaporation area (7) corresponds to the upper positive phase and the lower positive phase of the flow channel area (3), and the thin liquid film evaporation occurs at the position; the flow channel area (3) is communicated with the inlet liquid storage tank (2) and the outlet liquid storage tank (4), and fluid passes through the inlet liquid storage tank (2), reaches the flow channel area (3), then reaches the outlet liquid storage tank (4), finally reaches the fluid outlet (6) through the outlet height limiting area (5), so that circulation in the evaporative cooling device is completed; the glass cover plate (9) and the silicon substrate (8) are packaged in an anodic bonding mode, and the flow channel region (3) is ensured to correspond to the evaporation region (7).
3. A near junction cooling device based on thin liquid film evaporation as claimed in claim 1, wherein: when the liquid flows through the flow passage area (3), part of the liquid working medium is subjected to thin liquid film evaporation phase change on the upper surface of the flow passage area (3), and part of the liquid working medium continuously flows through the outlet liquid storage tank (4), the outlet height limiting area (5) and the fluid outlet (6) and finally reaches a liquid storage tank outside the device.
4. A near junction cooling device based on thin liquid film evaporation as claimed in claim 1, wherein: the bottom surface of the glass cover plate (9) of the whole evaporation cooling device is parallel to and opposite to and attached to the upper surface of the silicon substrate (8) so as to ensure the anode bonding tightness.
5. A near junction cooling device based on thin liquid film evaporation as claimed in claim 1, wherein: the whole device is horizontally arranged in the negative pressure cavity, the fluid inlet (1) is connected with the liquid working medium storage liquid through a pump, the liquid working medium flowing out of the fluid outlet (6) flows into the liquid working medium storage liquid, meanwhile, the gas working medium formed by phase change cools on the inner surface of the negative pressure cavity and then flows into the liquid working medium storage liquid, and the outer surface of the negative pressure cavity can be cooled by adopting a gas or liquid cooling medium.
6. A near junction cooling device based on thin liquid film evaporation as claimed in claim 1, wherein: the outlet height-limiting area (5) of the silicon substrate (8) is used for controlling the thickness of a liquid film in the device, and redundant fluid flows out from the upper half opening part of the outlet height-limiting area (5) so as to ensure that the thickness of the liquid film is kept thinner in the whole flow channel area (3); the evaporation area (7) of the glass cover plate (9) is used for emitting steam.
7. A near junction cooling device based on thin liquid film evaporation as claimed in claim 1, wherein: the fluid working medium can be FC-72, FHE-7100 or other insulating dielectric fluid respectively, and the material of the system device is selected from glass, silicon and silicon compound or heat-conducting metal material as a base material.
8. A near junction cooling device based on thin liquid film evaporation as claimed in claim 1, wherein: the multiple parallel thin flow channel grooves (31) are divided into a group by adopting two relatively close parts, the multiple groups of the thin flow channel grooves are parallel, the distance between the two thin flow channel grooves (31) in one group is relatively close, and the distance between the two adjacent thin flow channel grooves (31) is relatively far; the width of the outlet height-limiting area (5) is smaller than the width of the inlet slot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010027529.8A CN111106081B (en) | 2020-01-10 | 2020-01-10 | Near junction cooling device based on thin liquid film evaporation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010027529.8A CN111106081B (en) | 2020-01-10 | 2020-01-10 | Near junction cooling device based on thin liquid film evaporation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN111106081A true CN111106081A (en) | 2020-05-05 |
| CN111106081B CN111106081B (en) | 2024-08-09 |
Family
ID=70426100
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010027529.8A Active CN111106081B (en) | 2020-01-10 | 2020-01-10 | Near junction cooling device based on thin liquid film evaporation |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111106081B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112566471A (en) * | 2020-12-15 | 2021-03-26 | 西安交通大学 | High heat flux density electronic device evaporation heat dissipation device and method |
| EP4362081A1 (en) * | 2022-10-31 | 2024-05-01 | Giga Computing Technology Co., Ltd. | Heat sink and electronic device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453641A (en) * | 1992-12-16 | 1995-09-26 | Sdl, Inc. | Waste heat removal system |
| CN209822624U (en) * | 2019-04-15 | 2019-12-20 | 北京工业大学 | Microchannel-nano porous composite structure evaporator |
| CN211578737U (en) * | 2020-01-10 | 2020-09-25 | 北京工业大学 | Near-junction cooling device based on thin liquid film evaporation |
-
2020
- 2020-01-10 CN CN202010027529.8A patent/CN111106081B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5453641A (en) * | 1992-12-16 | 1995-09-26 | Sdl, Inc. | Waste heat removal system |
| CN209822624U (en) * | 2019-04-15 | 2019-12-20 | 北京工业大学 | Microchannel-nano porous composite structure evaporator |
| CN211578737U (en) * | 2020-01-10 | 2020-09-25 | 北京工业大学 | Near-junction cooling device based on thin liquid film evaporation |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112566471A (en) * | 2020-12-15 | 2021-03-26 | 西安交通大学 | High heat flux density electronic device evaporation heat dissipation device and method |
| CN112566471B (en) * | 2020-12-15 | 2022-02-22 | 西安交通大学 | High heat flux density electronic device evaporation heat dissipation device and method |
| EP4362081A1 (en) * | 2022-10-31 | 2024-05-01 | Giga Computing Technology Co., Ltd. | Heat sink and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN111106081B (en) | 2024-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Jörg et al. | Direct single impinging jet cooling of a MOSFET power electronic module | |
| CN209822624U (en) | Microchannel-nano porous composite structure evaporator | |
| CN104167399B (en) | Misplaced Complex Microchannel Micro Heat Exchanger | |
| Robinson | A thermal–hydraulic comparison of liquid microchannel and impinging liquid jet array heat sinks for high-power electronics cooling | |
| CN109979900B (en) | Micro-channel-nano porous composite structure evaporator of GaN HEMT device substrate level | |
| CN103188912A (en) | Lotus-type regular porous metal microchannel heat sink using liquid metal working medium | |
| CN105682434A (en) | Composite heat dissipation device combined with thermoelectric cooling and micro channel liquid cooling | |
| CN111106081A (en) | Near-junction cooling device based on thin liquid film evaporation | |
| CN115332204A (en) | A manifold micro-channel radiator with low thermal resistance, low pump power and good stability | |
| CN111026253A (en) | Liquid-cooled chip radiator with low-resistance flow channel enhanced heat exchange upper cover | |
| CN113611675A (en) | Heat radiator | |
| CN116454046A (en) | A phase change fluid jet impingement cooling device based on porous layer | |
| CN211578737U (en) | Near-junction cooling device based on thin liquid film evaporation | |
| CN107094361B (en) | A kind of flat-plate minitype loop circuit heat pipe of upper cover plate setting chamber | |
| CN107094360B (en) | A kind of flat-plate minitype loop circuit heat pipe system | |
| CN211319165U (en) | Low flow resistance water-cooling chip radiator | |
| CN114025142B (en) | Liquid cooling heat dissipation cold head, liquid cooling heat dissipation system and laser television | |
| CN107091582B (en) | A kind of flat-plate minitype loop circuit heat pipe of capillary wick capillary force change | |
| RU107582U1 (en) | MICROCHANNEL HEAT EXCHANGER WITH NANORELIEF | |
| CN107087375B (en) | The flat type loop heat pipe that a kind of vaporization chamber does not connect directly with jet chimney | |
| CN205624263U (en) | Ice cream -making machine | |
| CN205542899U (en) | Semiconductor refrigeration components | |
| CN109346452B (en) | A heat dissipation device applied to 3D integrated circuits | |
| CN114664768A (en) | A pin-fin and rib combined micro-channel radiator | |
| CN114122872A (en) | A laser cooling system based on microscale heat transfer |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |