CN111101097A - Reaction chamber and thin film deposition equipment - Google Patents
Reaction chamber and thin film deposition equipment Download PDFInfo
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- CN111101097A CN111101097A CN201811257769.6A CN201811257769A CN111101097A CN 111101097 A CN111101097 A CN 111101097A CN 201811257769 A CN201811257769 A CN 201811257769A CN 111101097 A CN111101097 A CN 111101097A
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- 238000000427 thin-film deposition Methods 0.000 title claims abstract description 10
- 230000007246 mechanism Effects 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000000696 magnetic material Substances 0.000 claims description 9
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 4
- 238000000151 deposition Methods 0.000 abstract description 18
- 230000008021 deposition Effects 0.000 abstract description 17
- 238000000034 method Methods 0.000 abstract description 10
- 230000008569 process Effects 0.000 abstract description 8
- 230000003028 elevating effect Effects 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 239000010409 thin film Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000005415 magnetization Effects 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- 229910019586 CoZrTa Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000306 component Substances 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 229910000889 permalloy Inorganic materials 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/18—Metallic material, boron or silicon on other inorganic substrates
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
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- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The reaction chamber and the thin film deposition equipment provided by the invention comprise a base, a bias magnet assembly arranged around the base and a bias magnet lifting mechanism used for driving the bias magnet assembly to lift, so that the distance between the bias magnet assembly and a target is adjustable, and when deposition of different materials and different process requirements is carried out, the uniformity of an anisotropic horizontal magnetic field can be improved by adjusting the height of the bias magnet assembly, thereby expanding the application range of the reaction chamber.
Description
Technical Field
The invention belongs to the technical field of microelectronic processing, and particularly relates to a reaction chamber and thin film deposition equipment.
Background
With the development of scientific technology, electronic components are increasingly developed toward high frequency, thin film, miniaturization, integration, and the like for devices (such as mobile phones). Although the integrated circuit manufacturing process can significantly reduce the size of the processor with the development of the technology, core components such as integrated inductors, noise suppressors, etc. are still difficult to realize in terms of high frequency, miniaturization, integration, etc., and in order to solve this problem, soft magnetic thin film materials with high magnetization, high permeability, high resonance frequency and high resistivity are attracting more and more attention. An important parameter affecting the soft magnetic thin film material is its in-plane uniaxial anisotropy field, wherein magnetic field induced deposition has the advantages of simple process, no need of adding process steps, little damage to chips and the like, and is a preferred method for adjusting the in-plane uniaxial anisotropy field of the soft magnetic thin film.
FIG. 1 is a schematic diagram of a reaction chamber in the prior art. As shown in fig. 1, a target 3 is disposed on the top of a reaction chamber, a base 1 is disposed at the bottom of the reaction chamber at a position opposite to the target 3, a bias magnetic field device 100 is circumferentially disposed along the base 1, and the bias magnetic field device 100 is fixedly mounted on the reaction chamber by a screw 101 and the bias magnetic field device 100. The bias magnetic field device 100 may form a horizontal magnetic field in the reaction chamber such that, when a magnetic material is deposited, magnetic domains of the magnetic material are aligned in a horizontal direction, an easy magnetization field is formed in the direction, and a hard magnetization field, i.e., an in-plane anisotropy field, is formed in a direction perpendicular to the direction in a plane, thereby obtaining an in-plane anisotropy magnetic thin film.
The following problems are inevitable in the above structure: because the distance between the target and the bias magnetic field device is fixed, the deposition requirements of different materials and different processes cannot be met, and the improvement on the uniformity of the magnetic material and the like is limited.
Disclosure of Invention
The invention aims to at least solve one technical problem in the prior art, and provides a reaction chamber and thin film deposition equipment.
As one aspect of the present invention, the present invention provides a reaction chamber, comprising a base and a bias magnet assembly disposed around the base, wherein a bias magnet lifting mechanism is further included for driving the bias magnet assembly to perform a lifting motion.
The bias magnet lifting mechanism comprises a lifting unit and a driving unit, the lifting unit is connected with the driving unit and the bias magnet assembly respectively, and the driving unit is used for driving the lifting unit to lift so as to drive the bias magnet assembly to move up and down.
The bias magnet lifting mechanism further comprises a first connecting support plate, and the bias magnet assembly is connected with the lifting unit through the first connecting support plate.
The reaction chamber further comprises a thimble, the bias magnet lifting mechanism further comprises a second connecting support plate, and the thimble is connected with the lifting unit through the second connecting support plate so as to drive the thimble and the bias magnet assembly to synchronously lift under the driving of the driving unit.
Wherein, a target is arranged in the reaction chamber, and the distance between the bias magnet assembly and the target ranges from 90mm to 180 mm.
The device also comprises a base lifting mechanism for driving the base to move up and down, and the value range of the height difference between the bias magnet assembly and the base is 0-10 mm.
The reactor also comprises a lining, wherein the lining surrounds the inner side of the side wall of the reaction chamber, and a preset distance is reserved between the lining and the side wall of the reaction chamber so as to allow the bias magnet assembly to ascend to a position between the lining and the side wall.
Wherein the liner comprises a vertical portion and an inclined portion, wherein,
the vertical part surrounds the inner side of the side wall of the reaction chamber, and a preset distance is formed between the vertical part and the side wall of the reaction chamber;
the inclined part surrounds the inner side of the side wall of the reaction chamber and is positioned above the vertical part, the lower end of the inclined part is connected with the upper end of the vertical part into a whole, and the upper end of the inclined part is fixedly connected with the side wall of the reaction chamber.
Wherein, the material of the lining is nonmagnetic material.
As another aspect of the present invention, the present invention further provides a thin film deposition apparatus, including a reaction chamber, wherein the reaction chamber is the reaction chamber provided by the present invention.
The invention has the following beneficial effects:
the reaction chamber provided by the invention comprises a base, a bias magnet assembly arranged around the base and a bias magnet lifting mechanism used for driving the bias magnet assembly to move up and down, so that the distance between the bias magnet assembly and a target material is adjustable, and when deposition of different materials and different process requirements is carried out, the uniformity of an anisotropic horizontal magnetic field can be improved by adjusting the height of the bias magnet assembly, thereby expanding the application range of the reaction chamber.
According to the film deposition equipment provided by the invention, the reaction chamber provided by the invention is adopted, so that the distance between the bias magnet assembly and the target is adjustable, and when deposition of different materials and different process requirements is carried out, the uniformity of an anisotropic horizontal magnetic field can be improved by adjusting the height of the bias magnet assembly, and the application range of the reaction chamber is expanded.
Drawings
FIG. 1 is a schematic diagram of a reaction chamber according to the prior art;
FIG. 2 is a schematic structural diagram of a reaction chamber according to a first embodiment of the present invention;
FIG. 3 is a schematic structural view of a bias magnet assembly used in a first embodiment of the present invention;
FIG. 4 is a schematic illustration of the effect of the distance between the target and the pedestal on deposition;
FIG. 5 is a schematic illustration of the effect of the distance between the bias field and the target on deposition;
fig. 6 is a schematic structural diagram of a reaction chamber according to a second embodiment of the present invention.
Wherein,
1-a base; 2-a bias magnet assembly; 21-a first magnet set; 22-a second magnet set; 23-a bias magnet lifting mechanism; 3-a target material; 41-vertical section; 42-an inclined portion; 51-a thimble; 52-thimble drive mechanism; 100-a bias magnetic field device; 101-screws.
Detailed Description
In order to make those skilled in the art better understand the technical solution of the present invention, the reaction chamber and the plasma generating apparatus provided by the present invention will be described in detail below with reference to the accompanying drawings.
Fig. 2 is a schematic structural diagram of a reaction chamber according to a first embodiment of the present invention. As shown in fig. 2, a first embodiment of the present invention provides a reaction chamber including a base 1, a bias magnet assembly 2, and a bias magnet elevating mechanism 23, wherein the bias magnet assembly 2 is disposed around the base to form a horizontal magnetic field above the base, and the bias magnet elevating mechanism 23 is used to drive the bias magnet assembly 2 to perform an elevating motion.
In the reaction chamber provided in the first embodiment of the present invention, the bias magnet lifting mechanism 23 is configured to drive the bias magnet assembly 2 to perform lifting movement, so that the distance between the bias magnet assembly 2 and the target 3 is adjustable, and when deposition is performed on different materials and with different process requirements, the uniformity of the horizontal anisotropic magnetic field can be improved by adjusting the height of the bias magnet assembly 2, thereby expanding the application range of the reaction chamber.
As shown in fig. 2, in the first embodiment of the present invention, the bias magnet lifting mechanism 23 includes a lifting unit and a driving unit, the lifting unit is respectively connected to the driving unit and the bias magnet assembly 2, and the driving unit is configured to drive the bias magnet assembly 2 to perform lifting movement so as to drive the bias magnet assembly 2 to perform lifting movement.
In the present embodiment, the driving unit is used only to drive the bias magnet assembly 2 to ascend and descend. At this time, the bias magnet elevating mechanism 23 further includes a first connection support plate, and the bias magnet assembly 2 is connected to the elevating unit through the first connection support plate connection.
The driving unit may be a linear driving source, such as a motor, or a rotary driving source, and when the driving unit is a rotary driving source, the lifting unit is a lead screw, and the rotary motion output by the rotary driving source is converted into a linear motion through the lead screw to drive the bias magnet assembly 2 to perform a lifting motion. In addition, in order to ensure the vacuum degree and cleanliness in the reaction chamber, it is preferable that the bias magnet elevating mechanism further includes a vacuum bellows which is connected to the lower ends of the reaction chamber and the bias magnet assembly, respectively, and isolates the space around the driving unit and the elevating unit from the reaction chamber.
In this embodiment, the reaction chamber further comprises a lift pin mechanism for lifting the workpiece placed on the carrying surface of the susceptor 1 or lowering the workpiece placed on the lift pin to be placed on the carrying surface of the susceptor 1. The thimble mechanism comprises a thimble 51 and a thimble driving mechanism 52, and the thimble driving mechanism 52 is connected with the thimble 51 and is used for driving the thimble 51 to move up and down.
In summary, in the present embodiment, the bias magnet assembly 2 and the thimble 51 are driven by different driving units respectively.
In this embodiment, the reaction chamber further includes a susceptor lifting mechanism, and the susceptor lifting mechanism is connected to the susceptor 1 and is used for driving the susceptor 1 to perform lifting movement. Further, in the present embodiment, the target 3 is disposed in the reaction chamber, and the uniformity of the horizontal anisotropic magnetic field is improved by adjusting at least two of the distance between the bias magnet assembly 2 and the target 3, the distance between the base 1 and the target 3, and the distance between the bias magnet assembly 2 and the base 1.
The adjustment principle of the distance between the bias magnet assembly 2 and the target 3, the distance between the base 1 and the target 3, and the distance between the bias magnet assembly 2 and the base 1 will be described in detail with reference to the drawings.
First, as shown in fig. 4, during the deposition process, the central region of the susceptor 1 is easy to deposit, and the edge of the susceptor is not easy to deposit, thereby forming a thickness difference that the deposit is thicker in the middle region and thinner in the edge region. Among them, the distance between the susceptor 1 and the target 3 has a great influence on such a deposition difference, and specifically, when the distance between the susceptor 1 and the target 3 is increased, the thickness difference between the middle region and the edge region becomes large, and uniformity becomes poor. According to the embodiment of the invention, the base lifting mechanism is arranged to drive the base 1 to move up and down, and the distance between the base 1 and the target 3 is adjusted, so that the deposition uniformity is improved.
Secondly, as shown in fig. 5, the bias magnet assembly 2 has different magnetic poles at two ends of the base 1, and during deposition, different magnetic poles have different actions on the deposited magnetic material atomic groups/molecular groups, one is repulsive and the other is attractive, so that a thickness difference is formed from thick to thin from one end to the other end, and the gradient change is large, and the uniformity of the magnetic thin film is poor. Specifically, the closer the distance between the bias magnet assembly 2 and the target 3, the greater the difference in thickness from one end to the other. The embodiment of the invention improves the deposition uniformity by adjusting the distance between the bias magnet assembly 2 and the target 3.
Third, the base 1 must be within the influence of the bias magnet assembly 2 in order to achieve a higher anisotropy level field uniformity.
As described above, the film uniformity increases with the distance between the susceptor 1 and the target 3, and when the distance between the susceptor 1 and the target 3 is greater than 190mm, the deposition uniformity may become poor and difficult to adjust. Therefore, in order to obtain better deposition uniformity and uniformity of the horizontal anisotropic magnetic field, it is preferable that the distance between the bias magnet assembly 2 and the target 3 is in a range of 90mm to 180mm, and the height difference between the bias magnet assembly 2 and the base 1 is in a range of 0mm to 10 mm.
In this embodiment, the liner structure of the prior art is modified by the present invention to accommodate the lifting and lowering movement of the bias magnet assembly 2. As shown in fig. 2, in the present embodiment, the liner surrounds the inner side of the sidewall of the reaction chamber, and a predetermined distance is provided between the liner and the sidewall of the reaction chamber, so that the bias magnet assembly 2 can be allowed to rise to a position between the liner and the sidewall by setting the predetermined distance.
Specifically, the liner includes a vertical portion 41 and an inclined portion 42, wherein the vertical portion 41 surrounds the inner side of the sidewall of the reaction chamber with the preset interval therebetween; the inclined portion 42 surrounds the inner side of the sidewall of the reaction chamber and is located above the vertical portion 41, and the lower end of the inclined portion 42 is integrally connected to the upper end of the vertical portion 41, and the upper end of the inclined portion 42 is fixedly connected to the sidewall of the reaction chamber.
Wherein the material of the inner liner is a non-magnetic material to prevent affecting the effect of the bias magnet assembly 2 in creating the bias magnetic field.
Fig. 3 is a schematic structural view of a bias magnet assembly used in the first embodiment of the present invention. As shown in fig. 3, in the present embodiment, the bias magnet assembly 2 includes a first magnet group 21 and a second magnet group 22, and the first magnet group 21 and the second magnet group 22 are disposed around the base 1 and are symmetrically disposed with respect to the axis of the base 1. The first magnet group 21 includes a plurality of first magnets arranged at intervals in the circumferential direction of the base 1, and the second magnet group 22 includes a plurality of second magnets arranged at intervals in the circumferential direction of the base 1. Wherein the magnetic pole directions of the plurality of first magnets and the plurality of second magnets are arranged in the radial direction of the base 1, and the N-pole of each first magnet is directed to the base 1 and the S-pole of each second magnet is directed to the base 1.
The reaction chamber provided by the invention can be used for depositing NiFe permalloy, such as Ni80Fe20、Ni45Fe55、Ni81Fe19Etc.; amorphous magnetic materials of CoZrTa, e.g. Co91.5Zr4.0Ta4.5Etc.; magnetic materials based on Co, Fe, Ni, etc., e.g. Co60Fe40NiFeCr, etc.; or other magnetic material.
Fig. 6 is a schematic structural diagram of a reaction chamber according to a second embodiment of the present invention. The second embodiment of the present invention provides a reaction chamber, which comprises the same structure of the base 1, the bias magnet assembly 2, the thimble mechanism, the target 3, the liner, etc. compared with the first embodiment, the difference is only that the specific structure of the bias magnet lifting mechanism is different.
In this embodiment, as shown in fig. 6, the bias magnet lifting mechanism 23 further includes a second connecting support plate, and the thimble 51 is connected to the lifting unit through the second connecting support plate, so as to drive the thimble 51 to move up and down synchronously with the bias magnet assembly 2 under the driving of the driving unit.
The driving unit may be a pin driving mechanism used in the prior art to drive the pin 51.
In the second embodiment of the present invention, the driving units are respectively connected to the bias magnet assembly 2 and the thimble 51, and the existing thimble driving unit in the reaction chamber is used to connect the driving unit to the bias magnet assembly 2, so that the lifting of the bias magnet assembly 2 can be realized, and therefore, the modification of the reaction chamber is small, and meanwhile, compared with the mode that the driving unit and the thimble driving mechanism 52 are respectively arranged on the bias magnet assembly 2 and the thimble 51 in the first embodiment, an independent bias magnet assembly driving source is not required to be additionally arranged, thereby simplifying the structure of the reaction chamber, reducing the cost, and reducing the volume of the equipment in the reaction chamber.
It should be noted that, since the thimble 51 and the offset magnet assembly 2 are lifted synchronously, in order to avoid driving the offset magnet assembly 2 to lift during the process and further enable the thimble 51 lifted synchronously to lift the workpiece from the base 1, in the present embodiment, the height relationship among the thimble 51, the offset magnet assembly 2 and the base 1 should be calculated in advance, for example, when the offset magnet assembly 2 is located at the highest position, the upper end of the thimble 51 should be lower than the position of the bearing surface of the base 1.
As another aspect of the present invention, the present invention also provides a thin film deposition apparatus including a reaction chamber, which is provided in an embodiment of the present invention.
According to the film deposition equipment provided by the invention, the reaction chamber provided by the invention is adopted, so that the distance between the bias magnet assembly and the target is adjustable, and when deposition of different materials and different process requirements is carried out, the uniformity of an anisotropic horizontal magnetic field can be improved by adjusting the height of the bias magnet assembly, and the application range of the reaction chamber is expanded.
The thin film deposition equipment provided by the invention comprises but is not limited to physical thin film deposition equipment.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. A reaction chamber comprises a base and a bias magnet assembly arranged around the base, and is characterized by further comprising a bias magnet lifting mechanism used for driving the bias magnet assembly to move up and down.
2. The reaction chamber as claimed in claim 1, wherein the bias magnet lifting mechanism comprises a lifting unit and a driving unit, the lifting unit is connected to the driving unit and the bias magnet assembly, and the driving unit is configured to drive the lifting unit to lift and lower to drive the bias magnet assembly to move up and down.
3. The reaction chamber of claim 2, wherein the bias magnet lift mechanism further comprises a first connection support plate, the bias magnet assembly being connected to the lift unit by the first connection support plate connection.
4. The reaction chamber of claim 3, further comprising a lift pin, wherein the bias magnet lifting mechanism further comprises a second connection support plate, and the lift pin is connected to the lifting unit through the second connection support plate to drive the lift pin to move up and down synchronously with the bias magnet assembly under the driving of the driving unit.
5. The reaction chamber of claim 1, wherein a target is disposed within the reaction chamber, and a distance between the bias magnet assembly and the target ranges from 90mm to 180 mm.
6. The reaction chamber of any one of claims 1 to 5, further comprising a pedestal elevation mechanism for driving the pedestal to perform an elevation motion, wherein a height difference between the bias magnet assembly and the pedestal ranges from 0mm to 10 mm.
7. The reaction chamber of claim 1, further comprising a liner surrounding an inside of a sidewall of the reaction chamber with a predetermined spacing therebetween to allow the bias magnet assembly to rise to a position between the liner and the sidewall.
8. The reaction chamber of claim 7 wherein the liner comprises a vertical portion and an inclined portion, wherein,
the vertical part surrounds the inner side of the side wall of the reaction chamber, and the preset distance is reserved between the vertical part and the side wall of the reaction chamber;
the inclined part surrounds the inner side of the side wall of the reaction chamber and is positioned above the vertical part, the lower end of the inclined part and the upper end of the vertical part are connected into a whole, and the upper end of the inclined part is fixedly connected with the side wall of the reaction chamber.
9. The reaction chamber of claim 7, wherein the material of the liner is a non-magnetic material.
10. A thin film deposition apparatus comprising a reaction chamber, wherein the reaction chamber is the reaction chamber according to any one of claims 1 to 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811257769.6A CN111101097A (en) | 2018-10-26 | 2018-10-26 | Reaction chamber and thin film deposition equipment |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811257769.6A CN111101097A (en) | 2018-10-26 | 2018-10-26 | Reaction chamber and thin film deposition equipment |
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| CN111101097A true CN111101097A (en) | 2020-05-05 |
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| CN201811257769.6A Pending CN111101097A (en) | 2018-10-26 | 2018-10-26 | Reaction chamber and thin film deposition equipment |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113725144A (en) * | 2021-08-27 | 2021-11-30 | 北京北方华创微电子装备有限公司 | Thimble lifting device and semiconductor process equipment |
| CN114196931A (en) * | 2021-12-21 | 2022-03-18 | 北京北方华创微电子装备有限公司 | Semiconductor chamber |
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