CN103374705B - A kind of magnetic control sputtering device - Google Patents
A kind of magnetic control sputtering device Download PDFInfo
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- CN103374705B CN103374705B CN201210105215.0A CN201210105215A CN103374705B CN 103374705 B CN103374705 B CN 103374705B CN 201210105215 A CN201210105215 A CN 201210105215A CN 103374705 B CN103374705 B CN 103374705B
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- 238000004544 sputter deposition Methods 0.000 title claims abstract description 40
- 238000000151 deposition Methods 0.000 claims abstract description 12
- 230000008021 deposition Effects 0.000 claims abstract description 12
- 229910021645 metal ion Inorganic materials 0.000 claims abstract description 9
- 239000002245 particle Substances 0.000 claims abstract description 9
- 230000005389 magnetism Effects 0.000 claims description 20
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 238000000034 method Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 239000007789 gas Substances 0.000 description 6
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 2
- 230000005674 electromagnetic induction Effects 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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Abstract
The invention provides a kind of magnetic control sputtering device, comprise reaction chamber, chuck and target, described chuck is arranged on bottom described reaction chamber, it is for carrying workpiece to be machined, described target is arranged on described reaction chamber top, limit magnet is provided with in the outside of described reaction chamber sidewall, and described limit magnet is positioned at the top of described chuck, also auxiliary magnet is provided with at the edge of described chuck, the magnetic pole of described auxiliary magnet and the magnetic pole of described limit magnet are arranged in the same way, described auxiliary magnet and described limit magnet form magnetic loop, by described magnetic loop, the metal ion in plasma body is moved to the fringe region of described reaction chamber, to increase the deposition of target particle at described workpiece to be machined fringe region.This magnetic control sputtering device can increase the deposition of workpiece to be machined fringe region, thus can improve the homogeneity of film thickness.
Description
Technical field
The invention belongs to microelectronic processing technique field, be specifically related to a kind of magnetic control sputtering device.
Background technology
Magnetic control sputtering device is widely used in the processing of unicircuit.Fig. 1 is the structure diagram of typical magnetic control sputtering device.Refer to Fig. 1, magnetic control sputtering device mainly comprises reaction chamber 1, vacuum system 2, chuck 5, target 6, airing system 7, magnetron 3 and for driving the motor 4 of magnetron motion.Wherein, chuck 5 is arranged on the bottom of reaction cavity 1, for carrying workpiece to be machined 8.Target 6 is arranged on the top of reaction cavity 1, and is connected with the direct supply (not shown) being arranged on reaction chamber 1 outside, and direct supply provides bias voltage to target 6.Magnetron 3 is arranged on the top of target 6, and scans the surface of target 6 under the driving of motor 4, thus plasma body 10 is gathered in the below of target 6.The vacuum tightness of vacuum system 2 for making reaction chamber 1 keep needed for technique.Airing system provides the process gas needed for implementing process, as argon gas or nitrogen etc. to reaction chamber 1 inside.
When this magnetic control sputtering device runs, the bias voltage being applied to target 6 makes it be negative pressure relative to the cavity 1 of ground connection, positive ion in the plasma body that process gas electric discharge produces is by the surface of the attraction bombardment target 6 of negative pressure, make the atoms metal on target 6 surface overflow and be deposited on the surface of workpiece to be machined 8, thus form film on the surface of workpiece to be machined 8.Because the metal ion that is deposited on the surface of workpiece to be machined 8 becomes normal distribution along the diameter of workpiece to be machined, cause the film thick middle, the thin edge that are deposited on workpiece to be machined surface, this directly affects reliability and the consistence of product.
For this reason, relevant technical staff in the field proposes a kind of magnetic control sputtering device of improvement.Fig. 2 is the structure diagram of the magnetic control sputtering device improved.Refer to Fig. 2, the magnetron 3 in the magnetic control sputtering device of improvement is Nonequilibrium magnetic keyholed back plate, and sets up limit magnet 9 in the outside of reaction chamber 1 sidewall, and the magnetic pole of limit magnet 9 is identical with the setting direction of the magnetic pole of the outer magnetic pole 3a of magnetron 3.In addition, the magnetic control sputtering device of improvement is identical with the structure of typical magnetic control sputtering device.In technological process, Nonequilibrium magnetic keyholed back plate is when scanning target 6, its outer magnetic pole 3a produces unnecessary magnetic line of force (cannot form the part magnetic line of force of magnetic loop with internal magnetic pole 3b) can form magnetic loop 7 with limit magnet 9, electronics in plasma body is by the constraint of this magnetic loop 7, the electron density at reaction chamber 1 edge can be increased, thus the target metal ion that is sputtered is moved to the edge of reaction chamber 1, this increases increasing the deposition of target at workpiece to be machined 8 edge, and then improves the thickness evenness of film.
But in actual use, the magnetic loop produced due to limit magnet 9 and magnetron 3 rotates with the rotation of magnetron 3, makes metal ion density upper zone in continuous change.In fact, the magnetic control sputtering device of improvement is the deposition dynamically increasing workpiece to be machined edge.When needing thinner film, still there is the situation of thick middle, thin edge in the film on workpiece to be machined surface.
And, the magnetic loop Distribution of Magnetic Field that limit magnet 9 and magnetron 3 produce is uneven, on the vertical direction of reaction chamber 1, magneticstrength near target 6 side is stronger, magneticstrength near magnet 9 side, limit is more weak, this makes the density of the target metal ion near reaction chamber 1 edge less, thus affects the homogeneity of film thickness.
Summary of the invention
For one of solving the problems of the technologies described above, the invention provides a kind of magnetic control sputtering device, it can increase the density of the target metal ion of reaction chamber fringe region, thus improves the homogeneity of film thickness.
The technical scheme adopted solved the problems of the technologies described above is to provide a kind of magnetic control sputtering device, comprise reaction chamber, chuck and target, described chuck is arranged on bottom described reaction chamber, it is for carrying workpiece to be machined, described target is arranged on described reaction chamber top, limit magnet is provided with in the outside of described reaction chamber sidewall, and described limit magnet is positioned at the top of described chuck, auxiliary magnet is comprised at the edge of described chuck, the magnetic pole of described auxiliary magnet and the magnetic pole of described limit magnet are arranged in the same way, described auxiliary magnet and described limit magnet form magnetic loop, and be uniformly distributed at vertical direction, by described magnetic loop, the metal ion in plasma body is moved to the fringe region of described reaction chamber, to increase the deposition of target particle at described workpiece to be machined fringe region.
Wherein, described auxiliary magnet is multiple permanent magnetism posts, and described multiple permanent magnetism post is embedded in the marginal position of described chuck equably.
Wherein, described auxiliary magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the first direct supply being arranged on reaction chamber outside, and described ruhmkorff coil comprises a circle or multiturn coil.
Preferably, the distance between the inner peripheral of described auxiliary magnet and the outer peripheral edge of described workpiece to be machined is 10-15mm.
Wherein, described limit magnet is polylith permanent magnet, and described polylith permanent magnet ring is evenly arranged around the sidewall of described reaction chamber.
Wherein, described limit magnet is permanent-magnetic clamp, and described permanent-magnetic clamp is sheathed on the outside of described reaction cavity.
Preferably, described limit magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the second direct supply of peripheral hardware, and described ruhmkorff coil comprises a circle or multiturn.
Wherein, described chuck is mechanical chuck or electrostatic chuck.
Wherein, above described target, be also provided with magnetron, described magnetron is Nonequilibrium magnetic keyholed back plate or unbalanced magnetron pipe.
The present invention has following beneficial effect:
Magnetic control sputtering device provided by the invention, the magnetic loop formed by the limit magnet arranged in the same way and auxiliary magnet can make the metal ion in plasma body move to the fringe region of reaction chamber, thus target particle is increased at the deposition of workpiece to be machined fringe region, and then improve the homogeneity of film thickness.In addition, the present embodiment can form magnetic loop at reaction chamber fringe region without using magnetron, and this magnetic loop can not rotate change because magnetron rotates, i.e. statically stable magnetic loop, therefore, even if the film of deposition is thinner, the uniform film of thickness can also be obtained.
Accompanying drawing explanation
Fig. 1 is the structure diagram of typical magnetic control sputtering device;
Fig. 2 is the structure diagram of the magnetic control sputtering device improved;
Fig. 3 is the structure diagram of embodiment of the present invention magnetic control sputtering device;
Fig. 4 is the vertical view that the embodiment of the present invention is provided with the chuck of auxiliary magnet;
Fig. 5 is the sectional view along A-A line in Fig. 4;
Fig. 6 is the vertical view of the another kind of auxiliary magnet of the embodiment of the present invention;
Fig. 7 is the sectional view of chuck in variant embodiment of the present invention.
Embodiment
For making those skilled in the art understand technical scheme of the present invention better, below in conjunction with accompanying drawing, magnetron sputtering equipment provided by the invention is described in detail.
Fig. 3 is the structure diagram of embodiment of the present invention magnetic control sputtering device.Refer to Fig. 3, magnetic control sputtering device reaction chamber 1, airing system 7, chuck 5 and target 6.Wherein, chuck 5 is arranged on the bottom of reaction cavity 1, for carrying workpiece to be machined 8.Target 6 is arranged on the top of reaction cavity 1, and is connected with the direct supply (not shown) being arranged on reaction chamber 1 outside.Direct supply provides bias voltage to target 6, makes target 6 be negative pressure relative to the cavity 1 of ground connection.Positive ion in plasma body in reaction chamber 1, by the surface of the attraction sputtering target material 6 of this negative pressure, makes the atoms metal on target 6 surface overflow and be deposited on the surface of workpiece to be machined 8, thus forms film on the surface of workpiece to be machined 8.
Be provided with limit magnet 11 in the outside of the sidewall of reaction chamber 1, and limit magnet 11 is positioned at the top of chuck 5.Meanwhile, be also provided with auxiliary magnet 12 at the edge of chuck 5, the magnetic pole of auxiliary magnet 12 and the magnetic pole of limit magnet 11 are arranged in the same way, that is, when the N of limit magnet 11 is arranged extremely downwards, the N pole of auxiliary magnet 12 is also arranged downwards, and vice versa.Limit magnet 11 and auxiliary magnet 12 form magnetic loop at the fringe region of reaction chamber 1, namely produce the magnetic field of vertical direction, and this magnetic field are uniformly distributed at vertical direction.Due to the effect of lorentz's force, this magnetic field is by electronics a large amount of for constraint, the electron density at reaction chamber 1 edge is increased, thus the charged metal particle that is sputtered is moved to the fringe region of reaction chamber 1, and then increase the deposition of target particle at workpiece to be machined fringe region, improve the homogeneity of film thickness.
In the present embodiment, auxiliary magnet is the permanent magnetism post being embedded in chuck edge.Fig. 4 is the vertical view that the embodiment of the present invention is provided with the chuck of auxiliary magnet, and Fig. 5 is the sectional view along A-A line in Fig. 4.Refer to Fig. 4 and Fig. 5, have eight permanent magnetism post 12a at the came of chuck 5, and eight permanent magnetism post 12a are evenly distributed in the edge of chuck 5.Place workpiece to be machined 8 in order to not affect at chuck 5 upper surface, the upper surface of permanent magnetism post 12a is lower than the upper surface of chuck 5.But this does not show, the upper surface of permanent magnetism post 12a must lower than the upper surface of chuck 5.In fact, the upper surface of permanent magnetism post 12a can realize object of the present invention equally higher than the upper surface of chuck 5, and, belong to protection scope of the present invention equally.In addition, the difference of altitude of the upper surface of permanent magnetism post 12a and the upper surface of chuck 5 can need to adjust according to processing conditions or technique.No matter but the difference of altitude of the upper surface of permanent magnetism post 12a and the upper surface of chuck 5 is how many, all large impact can not be caused on the magnetic line of force that permanent magnetism post 12a and limit magnet 11 are formed.
Be understood that, the present embodiment auxiliary magnet 12 comprises eight permanent magnetism post 12a, but this does not represent that auxiliary magnet 12 can only arrange eight permanent magnetism post 12a, and permanent magnetism post 12a is fixed by SUS410 stainless steel mounting block, affects magnetic field's regularity to avoid mounting block.In fact, auxiliary magnet 12 can arrange an any amount permanent magnetism post 12a according to processing requirement.No matter auxiliary magnet 12 comprises several permanent magnetism post 12a, all belongs to protection scope of the present invention.
In order to make auxiliary magnet 12 and limit magnet 11 form good magnetic loop, avoid auxiliary magnet 12 to affect chuck 5 simultaneously and place workpiece to be machined 8, the distance D between the inner peripheral of auxiliary magnet 12 and the outer peripheral edge of workpiece to be machined 8 is 10-15mm.Be understood that, the distance D between the inner peripheral of auxiliary magnet 12 and the outer peripheral edge of workpiece to be machined 8 also can adjust according to actual needs.
In the present embodiment, limit magnet 11 is permanent-magnetic clamp, and permanent-magnetic clamp is sheathed on the outside of the sidewall of reaction chamber 1.By the magnetic loop that permanent-magnetic clamp and permanent magnetism post 12a are formed at the fringe region of reaction chamber 1, this magnetic loop makes the target metallics that is sputtered move to the edge of reaction chamber 1, thus increase the deposition of target metallics at workpiece to be machined 8 fringe region, improve the homogeneity of film thickness, and then improve the processing quality of magnetic control sputtering device.
The present embodiment magnetic control sputtering device also comprises airing system, and in order to provide the process gas needed for implementing process to reaction chamber 1 inside, as argon gas or nitrogen etc., process gas is ionized formation plasma body in reaction chamber 1.
Above target 6, be also provided with magnetron 3 and for driving the motor 4 of magnetron motion, magnetron 3 can improve the density of the plasma body of target 6 surf zone, thus improve the sputter rate of target 6.And the present embodiment is owing to can form magnetic loop at reaction chamber fringe region without using magnetron, and therefore, magnetron 3 can adopt unbalanced magnetron pipe, also can adopt Nonequilibrium magnetic keyholed back plate.
In the present embodiment, chuck 5 can adopt mechanical chuck, also can adopt electrostatic chuck, can certainly adopt the chuck of other type.
It should be noted that, in the present embodiment, auxiliary magnet 12 is eight permanent magnetism post 12a.In fact, auxiliary magnet 12 also can be permanent-magnetic clamp 12b, and permanent-magnetic clamp 12b is embedded in the edge of chuck 5, as shown in Figure 6, is the vertical view of the another kind of auxiliary magnet of the embodiment of the present invention.
In addition, as a variant embodiment of the present invention, auxiliary magnet 12 also can be ruhmkorff coil, as shown in Figure 7, is the sectional view of chuck in variant embodiment of the present invention.Ruhmkorff coil 12c is inlayed in chuck 5.Ruhmkorff coil 12c is connected with the first direct supply being arranged on reaction chamber 1 outside.When passing into electric current in ruhmkorff coil 12c, according to electromagnetic induction principle, ruhmkorff coil 12c will produce inducedmagnetic field, and this inducedmagnetic field and limit magnet 11 form magnetic loop, charged target particle can be made equally to move to the edge of reaction chamber 1, thus improve the homogeneity of film.Be understood that, the number of turn of ruhmkorff coil 12c can be set as a circle or multiturn coil according to actual needs.
Similarly, in the present embodiment, limit magnet 11 is permanent-magnetic clamp.In fact, limit magnet 11 also can be made up of polylith permanent magnet, and polylith permanent magnet is evenly arranged around the sidewall of reaction chamber 1, produces uniform magnetic loop to make limit magnet 11 and auxiliary magnet 12 at the marginal position of reaction chamber 1.
In addition, limit magnet 11 also can be ruhmkorff coil, and ruhmkorff coil is connected with the second direct supply being arranged on reaction chamber 1 outside.When passing into electric current in ruhmkorff coil, according to electromagnetic induction principle, ruhmkorff coil will produce inducedmagnetic field, and this inducedmagnetic field and auxiliary magnet 12 form magnetic loop, charged target particle can be made equally to move to the edge of reaction chamber 1, thus improve the homogeneity of film.Be understood that, the number of turn of ruhmkorff coil can be set as a circle or multiturn coil according to actual needs.
Also it should be noted that, the magnetic control sputtering device that the present embodiment provides may be used for the materials such as sputtering Ta, Cu, Ti, Al, also may be used for sputtering other material, to prepare film corresponding with it.And magnetic control sputtering device not only may be used for the making of unicircuit, also other function film can be made.
The magnetic control sputtering device that the present embodiment provides forms magnetic loop by limit magnet and auxiliary magnet at the fringe region of reaction chamber, the target particle that this magnetic loop can will sputter, fringe region to reaction chamber moves, and then increase the deposition of target particle at workpiece to be machined fringe region, improve the homogeneity of film thickness.In addition, the present embodiment can form magnetic loop at reaction chamber fringe region without using magnetron, and this magnetic loop can not rotate change because magnetron rotates, i.e. statically stable magnetic loop, therefore, even if the film of deposition is thinner, the uniform film of thickness can also be obtained.
Be understandable that, the illustrative embodiments that above embodiment is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (10)
1. a magnetic control sputtering device, comprise reaction chamber, chuck and target, described chuck is arranged on bottom described reaction chamber, it is for carrying workpiece to be machined, described target is arranged on described reaction chamber top, limit magnet is provided with in the outside of described reaction chamber sidewall, and described limit magnet is positioned at the top of described chuck, it is characterized in that, auxiliary magnet is comprised at the edge of described chuck, the magnetic pole of described auxiliary magnet and the magnetic pole of described limit magnet are arranged in the same way, described auxiliary magnet and described limit magnet form magnetic loop, and be uniformly distributed at vertical direction, by described magnetic loop, the metal ion in plasma body is moved to the fringe region of described reaction chamber, to increase the deposition of target particle at described workpiece to be machined fringe region.
2. magnetic control sputtering device according to claim 1, is characterized in that, described auxiliary magnet is multiple permanent magnetism posts, and described multiple permanent magnetism post is embedded in the marginal position of described chuck equably.
3. magnetic control sputtering device according to claim 1, is characterized in that, described auxiliary magnet is permanent-magnetic clamp, and described permanent-magnetic clamp is embedded in the marginal position of described chuck.
4. magnetic control sputtering device according to claim 3, is characterized in that, described auxiliary magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the first direct supply being arranged on reaction chamber outside, and described ruhmkorff coil comprises a circle or multiturn coil.
5. magnetic control sputtering device according to claim 1, is characterized in that, the distance between the inner peripheral of described auxiliary magnet and the outer peripheral edge of described workpiece to be machined is 10-15mm.
6. magnetic control sputtering device according to claim 1, is characterized in that, described limit magnet is polylith permanent magnet, and described polylith permanent magnet ring is evenly arranged around the sidewall of described reaction chamber.
7. magnetic control sputtering device according to claim 6, is characterized in that, described limit magnet is permanent-magnetic clamp, and described permanent-magnetic clamp is sheathed on the outside of described reaction cavity.
8. magnetic control sputtering device according to claim 1, is characterized in that, described limit magnet is ruhmkorff coil, and described ruhmkorff coil is connected with the second direct supply of peripheral hardware, and described ruhmkorff coil comprises a circle or multiturn.
9. the magnetic control sputtering device according to claim 1-8 any one, is characterized in that, described chuck is mechanical chuck or electrostatic chuck.
10. the magnetic control sputtering device according to claim 1-8 any one, is characterized in that, above described target, be also provided with magnetron, and described magnetron is Nonequilibrium magnetic keyholed back plate or unbalanced magnetron pipe.
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| CN201210105215.0A CN103374705B (en) | 2012-04-11 | 2012-04-11 | A kind of magnetic control sputtering device |
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| CN201210105215.0A CN103374705B (en) | 2012-04-11 | 2012-04-11 | A kind of magnetic control sputtering device |
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| CN103374705A CN103374705A (en) | 2013-10-30 |
| CN103374705B true CN103374705B (en) | 2015-12-02 |
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Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN104746025A (en) * | 2013-12-27 | 2015-07-01 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Sputtering apparatus |
| CN104746031B (en) * | 2013-12-29 | 2017-07-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | A kind of sputtering system |
| GB201505578D0 (en) | 2015-03-31 | 2015-05-13 | Spts Technologies Ltd | Method and apparatus for depositing a material |
| CN107447195B (en) * | 2016-05-30 | 2020-08-21 | 北京北方华创微电子装备有限公司 | Magnetron and magnetron sputtering system |
| CN108690962B (en) * | 2017-04-06 | 2020-06-19 | 北京北方华创微电子装备有限公司 | Magnetron sputtering equipment and magnetron sputtering deposition method |
| CN111411338B (en) | 2020-04-07 | 2023-04-14 | 北京北方华创微电子装备有限公司 | Magnetic force piece structure in semiconductor equipment and semiconductor magnetron sputtering equipment |
| WO2021259233A1 (en) | 2020-06-23 | 2021-12-30 | 中国石油化工股份有限公司 | Anti-coking equipment, preparation method therefor, and use thereof |
| CN112738968A (en) * | 2020-12-18 | 2021-04-30 | 北京北方华创微电子装备有限公司 | Plasma generating device and semiconductor processing equipment |
| CN114196931B (en) * | 2021-12-21 | 2023-09-08 | 北京北方华创微电子装备有限公司 | Semiconductor chamber |
| CN114892138B (en) * | 2022-04-15 | 2024-10-29 | 上海积塔半导体有限公司 | Magnetron sputtering deposition device and magnetron sputtering deposition method |
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| CN102227514A (en) * | 2008-12-26 | 2011-10-26 | 佳能安内华股份有限公司 | Sputtering apparatus, sputtering method, and electronic device manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001152332A (en) * | 2000-09-11 | 2001-06-05 | Hitachi Ltd | Sputter deposition equipment |
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|---|---|---|---|---|
| US5178739A (en) * | 1990-10-31 | 1993-01-12 | International Business Machines Corporation | Apparatus for depositing material into high aspect ratio holes |
| US20040094402A1 (en) * | 2002-08-01 | 2004-05-20 | Applied Materials, Inc. | Self-ionized and capacitively-coupled plasma for sputtering and resputtering |
| CN101142094A (en) * | 2005-03-18 | 2008-03-12 | 应用材料公司 | Split magnet ring on a magnetron sputter chamber |
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Address after: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
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