CN104746031B - A kind of sputtering system - Google Patents
A kind of sputtering system Download PDFInfo
- Publication number
- CN104746031B CN104746031B CN201310737548.XA CN201310737548A CN104746031B CN 104746031 B CN104746031 B CN 104746031B CN 201310737548 A CN201310737548 A CN 201310737548A CN 104746031 B CN104746031 B CN 104746031B
- Authority
- CN
- China
- Prior art keywords
- sputtering
- chamber
- pedestal
- target
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
The present invention provides a kind of sputtering system, including chamber, sputtering source and pedestal, plasma is resulted from the chamber, the pedestal is used for carrying substrates, including sputtering source at least one pair of described, sputtering source is oppositely arranged described in each pair, and the pedestal is in the chamber and outside heating region.The sputtering system sputter rate is high, and the damage to film is small, and can realize low-temperature sputter.
Description
Technical field
The invention belongs to field of semiconductor processing, it is related to a kind of sputtering system.
Background technology
Film deposition techniques are a widely used technology of general technical field of semiconductors, such as insulating barrier and metalized conductive
Layer is to be obtained by film deposition techniques.Physical vapor deposition device is the common equipment for realizing film deposition techniques, and it leads to
The means such as pervaporation, ion beam, sputtering obtain film.Wherein, sputtering method sedimentation rate is fast, and the film compactness for obtaining
Well, the features such as purity is high, is generally used in the industry.
Fig. 1 is two grades of structural scheme of mechanism of sputtering equipment that a kind of implementation sputtering method prepares film.As shown in figure 1, two grades
Sputtering equipment includes chamber 3, target 2 and the pedestal 4 for carrying substrates 7, and target 2 and pedestal 4 are respectively oppositely located at chamber 3
Interior top and bottom.Chamber 3 is grounded.The cooling device 1 for cooling down target 2 is provided with the top of target 2.Vacuum system 6
For adjusting the pressure in chamber 3, air-path control system 5 is used for providing process gas in chamber 3.Target 2 and dc source
（Not shown in figure）Negative potential connection.When process gas is ionized generation plasma, the surface of target 2 is bombarded, banged
Hit the surface formation film that the target 2 for getting off is deposited on substrate 7.
Although two grades of sputtering equipments have the advantages that sedimentation rate is fast, film is fine and close and film purity is higher.However,
In technical process, negative film between plasma and substrate 7 pressure can photoinduced electron bombardment substrate 7, not only can damaging substrate 7,
And the temperature of substrate 7 can be caused to raise, it is impossible to meet high deposition rate required by general semiconductor applications, low temperature and not damaged
Requirement.
Although person skilled is improved above-mentioned two grades of sputtering equipments, i.e. target 2 is connected radio-frequency power supply,
To reduce temperature and the damage of substrate 7.However, the connection radio-frequency power supply of target 2 can reduce sedimentation rate, influence production effect again
Rate.
The content of the invention
To solve the above problems, the present invention provides a kind of sputtering system, its not only sedimentation rate it is very fast, and can be effective
Ground reduces damage and the temperature of substrate.
The technical scheme for being used for solving above-mentioned technical problem is to provide a kind of sputtering system, including chamber, sputtering source
And pedestal, plasma resulted from the chamber, and the pedestal is used for carrying substrates, and it includes at least one pair of described sputtering
Source, sputtering source described in each pair is oppositely arranged, and the pedestal is in the chamber and outside heating region.
Wherein, the pedestal is in the chamber and positioned at the edge of heating region.
Wherein, the sputtering source includes target, magnet assemblies and cooling device, and the sputter face of the target is towards the chamber
The sputter face of the target in room, and sputtering source described in each pair is relative, and the magnet assembly and the cooling device are located at institute
State the non-sputtered face of target, and the magnet assemblies in sputtering source described in each pair opposite polarity.
Wherein, the sputtering source also includes dc source, and the negative pole of the dc source is electrically connected with the target.
Wherein, including a pair of sputtering sources, side wall of the sputtering source located at the chamber.
Wherein, also including headstock gear, for making the sputtering source separate and close with the chamber.
Wherein, also including vacuum system, for adjusting the vacuum in the chamber.
Wherein, also including process gas supply system, for the process gas needed for being provided in the chamber.
Wherein, the pedestal includes chip bench, transmission mechanism and drive mechanism, and the chip bench is used for carrying substrates, institute
The two ends for stating transmission mechanism connect the output end and the chip bench of the drive mechanism, the driving institute of the drive mechanism respectively
State chip bench up and down motion.
Wherein, also including support pin and support pin driver part, the support pin driver part is driven on the support pin
Lower motion, the loading end of the pedestal or the loading end jack-up from the pedestal are positioned over by the substrate.
Wherein, also including shield ring, the shield ring is located at the edge of the substrate.
Preferably, for preparing the metal gate film in IC fields or the ito thin film of LED field.
The invention has the advantages that：
The sputtering source that the sputtering system that the present invention is provided is oppositely arranged by least one pair of, secondary electron is between two targets
Back and forth movement, improves the sputter rate of target, so as to improve the speed of film forming；Pedestal is located at outside heating region,
Bombardment of the plasma to substrate can be reduced, so as to reduce the damage of film, the quality of film is improved, and reduce base
The temperature of piece, realizes low-temperature sputter.
Brief description of the drawings
Fig. 1 is two grades of structural representations of sputtering equipment that a kind of implementation sputtering method prepares film；
Fig. 2 is the structural representation of the sputtering system of the embodiment of the present invention.
Specific embodiment
To make those skilled in the art more fully understand technical scheme, the present invention is carried below in conjunction with the accompanying drawings
The sputtering system of confession is described in detail.
Fig. 2 is the structural representation of embodiment of the present invention sputtering system.As shown in Fig. 2 sputtering system includes chamber 11, splashes
Penetrate source 12, pedestal 13, vacuum system 14 and process gas supply system 15.Sputtering source 12 is located at the side wall of chamber 11, pedestal 13
Bottom in chamber 11, vacuum system 14 is used to adjust the vacuum in chamber 11, and process gas supply system 15 is used for
To the process gas needed for providing implementing process in chamber 11, such as Ar gas.
The present embodiment sputtering system is provided with two sputtering sources 12, that is, be provided with a pair of sputtering sources 12, and two sputtering sources 12 are relative
Side wall of the ground located at chamber 11.Sputtering source 12 includes target 121, magnet assemblies 122 and cooling device 123, the sputtering of target 121
Facing to chamber 11, the non-sputtered face setting magnet assembly 122 that magnet assembly 122 is close to target 121 is by polylith magnet array
Or be spaced and form, or an integrally-built magnet.The sputter face of the target 121 in two sputtering sources 12 is relative to be set
Put, and the magnet assemblies 122 in two sputtering sources 12 opposite polarity, so as to formed between two targets 121 perpendicular to
The magnetic field B of sputter face.The non-sputtered face that cooling device 123 is close to target 121 is set, for cooling down target 121, to avoid target
121 temperature are too high.Cooling device 123 uses water-cooling apparatus, it would however also be possible to employ air cooling device.
Sputtering source 12 also includes dc source 124, and the negative pole of dc source 124 is electrically connected with target 121, so as to be close to
Target 121 is formed about the sputter face perpendicular to target 121 and the electric field E parallel to magnetic field B, can strengthen plasma and hits
The energy of target 121 is hit, and then improves sputter rate.
In the present embodiment, sputtering source 12 can be fixed on the locular wall of chamber 11, it is also possible in sputtering source 12 and chamber 11
Between headstock gear is set, for making sputtering source 12 be separated with chamber 11（Uncap）And closure.As shown in Fig. 2 headstock gear bag
Rotary shaft 19 is included, sputtering source 12 can be rotated to side by rotary shaft 19, after dotted line is represented and separates sputtering source 12 in Fig. 2
State.In fact, each sputtering source 12 can be correspondingly arranged a headstock gear, it is also possible to by one of them or several sputterings
Source sets headstock gear.
In sputter procedure, secondary electron is acted on back and forth movement, sputtering particle between two targets 121 by electric field E
（Such as Ar+）The surface of target 121 is bombarded in the presence of electric field E, target 121 is sputtered out.When high energy secondary electron has
During parallel to component velocity beyond the sputter face of target 121, the secondary electron by magnetic field B Lorentz force action, parallel to target
The sputter face of material 121 is circled.That is, secondary electron makees spiral coming and going in the presence of electric field E and magnetic field B
Motion.In the presence of electric field E and magnetic field B, plasma can be tightly constrained between two targets 121, and energy
Realize high-speed sputtering.
It should be noted that the present embodiment sputtering system includes a pair of sputtering sources 12.In fact, sputtering system can include
Two pairs or more to sputtering source 12.Sputtering source 12 can be arranged on the side wall of chamber 11, it is also possible to be arranged on chamber roof or
Bottom wall, as long as the sputter face of the target 121 in each pair sputtering source 12 is oppositely arranged, the magnet assemblies in each pair sputtering source 12
122 opposite polarity.In use, the side wall by sputtering source 12 located at chamber 11 is easy to care and maintenance.
Pedestal 13 is used to carry and substrate transport.As shown in Fig. 2 pedestal 13 includes chip bench 131, the and of transmission mechanism 132
Drive mechanism 133, chip bench 131 is used for carrying substrates 18, and the two ends of transmission mechanism 132 connect the defeated of drive mechanism 133 respectively
Go out end and chip bench 131, the driving chip bench 131 of drive mechanism 133 moves up and down.That is, pedestal 13 is located at chamber 11
Interior bottom, and oscilaltion campaign can be carried out.When using, by pedestal 13 outside the B scopes of magnetic field, it is preferably disposed to
Outside ion body region, more preferably located at the marginal position of heating region, set with avoiding sputter procedure high energy electron from bombarding
In the chip 18 of the loading end of pedestal 13, the temperature of substrate 18 was both reduced, realized low-temperature sputter technique；The damage of film can be reduced again
Wound, so as to improve the quality of film.
Sputtering system also includes support pin 16 and support pin driver part 20, and support pin driver part 20 drives support pin 16
Move up and down, substrate 18 is positioned over the loading end of pedestal 13（Upper surface shown in figure）Or from the loading end top of pedestal 13
Rise.Support pin 16 and support pin driver part 20 are more beneficial for the transmission of substrate 18, to avoid the quilt in transmitting procedure of chip 18
Damage.
Sputtering system also includes shield ring 17, and shield ring 17 is located at the edge of substrate 18, for preventing from damaging pedestal 13.
In the present embodiment, chamber 11 uses circular configuration, it would however also be possible to employ square or other shapes.The target of sputtering source 12
Material 121 can use square target, it would however also be possible to employ other shapes.
The present embodiment sputtering system can be used for high speed, low temperature, the undamaged metal gate film for preparing IC fields, encapsulation
The film in field, the ITO of LED field（Indium tin oxide）Film, prepare it is above-mentioned refer to field and other fields be suitable to sputtering
All kinds of films realized.
The sputtering source that the sputtering system that the present embodiment is provided passes through a pair of opposing, secondary electron is past between two targets
Motion is returned, the sputter rate of target is improve, so as to improve the speed of film forming；Pedestal, can outside heating region
To reduce bombardment of the plasma to substrate, so as to reduce the damage of film, the quality of film is improved, and reduce substrate
Temperature, realize low-temperature sputter.
It is understood that the embodiment of above principle being intended to be merely illustrative of the present and the exemplary implementation for using
Mode, but the invention is not limited in this.For those skilled in the art, essence of the invention is not being departed from
In the case of god and essence, various changes and modifications can be made therein, and these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of sputtering system, including chamber, sputtering source and pedestal, plasma are resulted from the chamber, and the pedestal is used
In carrying substrates, it is characterised in that including sputtering source at least one pair of described, side wall of the sputtering source described in each pair located at the chamber
And sputtering source is oppositely arranged described in each pair, the pedestal is in the chamber and outside heating region；Wherein, institute
Stating sputtering source includes target, magnet assembly, and the sputter face of the target is towards the chamber, and the institute in sputtering source described in each pair
The sputter face for stating target is relative, and the magnet assembly is located at the non-sputtered face of the target, and the institute in sputtering source described in each pair
State the opposite polarity of magnet assembly.
2. sputtering system according to claim 1, it is characterised in that the pedestal in the chamber and positioned at etc. from
The edge in daughter region.
3. sputtering system according to claim 1, it is characterised in that the sputtering source also includes cooling device, described cold
But device is located at the non-sputtered face of the target.
4. sputtering system according to claim 3, it is characterised in that the sputtering source also includes dc source, described straight
The negative pole for flowing power supply is electrically connected with the target.
5. sputtering system according to claim 1, it is characterised in that also including headstock gear, for making the sputtering source
Separate and close with the chamber.
6. sputtering system according to claim 1, it is characterised in that also including vacuum system, for adjusting the chamber
Interior vacuum.
7. sputtering system according to claim 1, it is characterised in that also including process gas supply system, for institute
Process gas needed for being provided in chamber is provided.
8. sputtering system according to claim 1, it is characterised in that the pedestal includes chip bench, transmission mechanism and drive
Motivation structure, the chip bench is used for carrying substrates, and the two ends of the transmission mechanism connect the output end of the drive mechanism respectively
With the chip bench, the driving chip bench up and down motion of the drive mechanism.
9. sputtering system according to claim 8, it is characterised in that also including support pin and support pin driver part, institute
Stating support pin driver part drives the support pin to move up and down, by the substrate be positioned over the pedestal loading end or from
The loading end jack-up of the pedestal.
10. sputtering system according to claim 1, it is characterised in that also including shield ring, the shield ring is located at described
The edge of substrate.
11. sputtering systems according to claim 1, it is characterised in that metal gate film or LED for preparing IC fields
The ito thin film in field.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310737548.XA CN104746031B (en) | 2013-12-29 | 2013-12-29 | A kind of sputtering system |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310737548.XA CN104746031B (en) | 2013-12-29 | 2013-12-29 | A kind of sputtering system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104746031A CN104746031A (en) | 2015-07-01 |
| CN104746031B true CN104746031B (en) | 2017-07-04 |
Family
ID=53586269
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310737548.XA Active CN104746031B (en) | 2013-12-29 | 2013-12-29 | A kind of sputtering system |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104746031B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107142452B (en) * | 2017-04-27 | 2019-07-23 | 柳州豪祥特科技有限公司 | The magnetron sputtering that can be improved quality of forming film prepares the system of ito thin film |
| CN107043915B (en) * | 2017-04-27 | 2019-05-28 | 柳州豪祥特科技有限公司 | The system that magnetron sputtering prepares ito thin film |
| CN107043916B (en) * | 2017-04-27 | 2019-08-02 | 柳州豪祥特科技有限公司 | The system that the magnetron sputtering of maintenance convenient for safeguarding prepares ito thin film |
| US12195842B2 (en) | 2019-11-11 | 2025-01-14 | Beijing Naura Microelectronics Equipment Co., Ltd. | Sputtering device with microwave heating mechanism |
| CN110923642B (en) * | 2019-11-11 | 2022-07-22 | 北京北方华创微电子装备有限公司 | Sputtering device |
| US20230381940A1 (en) * | 2020-11-04 | 2023-11-30 | Apex Brands, Inc. | Impact Driver Anvil |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1229269A (en) * | 1998-03-12 | 1999-09-22 | 松下电器产业株式会社 | Operating method and device of base plate and sticking checking method and device used thereof |
| CN102400107A (en) * | 2010-09-13 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering source and magnetron sputtering device |
| CN103261477A (en) * | 2010-12-08 | 2013-08-21 | Oc欧瑞康巴尔斯公司 | Apparatus and method for depositing a layer onto a substrate |
| CN103374705A (en) * | 2012-04-11 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering device |
-
2013
- 2013-12-29 CN CN201310737548.XA patent/CN104746031B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1229269A (en) * | 1998-03-12 | 1999-09-22 | 松下电器产业株式会社 | Operating method and device of base plate and sticking checking method and device used thereof |
| CN102400107A (en) * | 2010-09-13 | 2012-04-04 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering source and magnetron sputtering device |
| CN103261477A (en) * | 2010-12-08 | 2013-08-21 | Oc欧瑞康巴尔斯公司 | Apparatus and method for depositing a layer onto a substrate |
| CN103374705A (en) * | 2012-04-11 | 2013-10-30 | 北京北方微电子基地设备工艺研究中心有限责任公司 | Magnetron sputtering device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104746031A (en) | 2015-07-01 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104746031B (en) | A kind of sputtering system | |
| JP6006286B2 (en) | Neutral beam source including belt-type magnet | |
| KR101097329B1 (en) | Sputtering apparatus | |
| CN105839065B (en) | A kind of magnetic control sputtering film plating device and method, the preparation method of nano particle | |
| CN106480420A (en) | A kind of high-density plasma sputtering coating equipment | |
| CN102719798A (en) | Magnetron sputtering system | |
| CN104350173A (en) | Method for coating substrate and coater | |
| US20170342547A1 (en) | Sputtering apparatus and sputtering method using the same | |
| JP2015007263A (en) | Organic device manufacturing device and organic device manufacturing method | |
| CN104810228A (en) | Spiral magnetron and magnetron sputtering device | |
| CN109154076A (en) | Film build method and sputtering equipment | |
| US20130319855A1 (en) | Magnetron sputtering system | |
| JP2020200525A (en) | Cathode unit for magnetron sputtering apparatus | |
| US9449799B2 (en) | Film deposition device | |
| CN218710809U (en) | Rotating target magnetron sputtering cathode magnetic field device | |
| CN106119795A (en) | Utilize the method that vacuum magnetron sputtering coating film technology prepares lithium battery C Si negative pole coating | |
| CN205839122U (en) | A kind of vacuum coating equipment | |
| CN103911592A (en) | Magnetron sputtering apparatus and method | |
| CN103074586B (en) | Low-temperature and low-damage multifunctional composite coating device and method | |
| KR101686802B1 (en) | Facing target spurttering apparatus | |
| CN205710902U (en) | Enhancement mode magnetron sputtering coil film coating equipment | |
| JP2020152968A (en) | Sputtering device | |
| CN109750267A (en) | A kind of magnetic control sputtering device | |
| CN104120391B (en) | Sputtering device, thin film formation method, and manufacturing method of organic light-emitting display device | |
| TWI249067B (en) | Particle beam source with adjustable divergence angle |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP03 | Change of name, title or address |
Address after: 100176 No. 8 Wenchang Avenue, Beijing economic and Technological Development Zone Patentee after: Beijing North China microelectronics equipment Co Ltd Address before: 100176 Beijing economic and Technological Development Zone, Wenchang Road, No. 8, No. Patentee before: Beifang Microelectronic Base Equipment Proces Research Center Co., Ltd., Beijing |
|
| CP03 | Change of name, title or address |