[go: up one dir, main page]

CN111092011B - A treatment method for improving surface contamination of LED chips - Google Patents

A treatment method for improving surface contamination of LED chips Download PDF

Info

Publication number
CN111092011B
CN111092011B CN201811233650.5A CN201811233650A CN111092011B CN 111092011 B CN111092011 B CN 111092011B CN 201811233650 A CN201811233650 A CN 201811233650A CN 111092011 B CN111092011 B CN 111092011B
Authority
CN
China
Prior art keywords
chip
deionized water
acid
fluoride
acetic acid
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201811233650.5A
Other languages
Chinese (zh)
Other versions
CN111092011A (en
Inventor
胡夕伦
闫宝华
肖成峰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shandong Inspur Huaguang Optoelectronics Co Ltd
Original Assignee
Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shandong Inspur Huaguang Optoelectronics Co Ltd filed Critical Shandong Inspur Huaguang Optoelectronics Co Ltd
Priority to CN201811233650.5A priority Critical patent/CN111092011B/en
Publication of CN111092011A publication Critical patent/CN111092011A/en
Application granted granted Critical
Publication of CN111092011B publication Critical patent/CN111092011B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01Manufacture or treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041Cleaning
    • H01L21/02057Cleaning during device manufacture
    • H01L21/02068Cleaning during device manufacture during, before or after processing of conductive layers, e.g. polysilicon or amorphous silicon layers

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning And De-Greasing Of Metallic Materials By Chemical Methods (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Cleaning By Liquid Or Steam (AREA)

Abstract

The invention relates to a treatment method for improving surface pollution of an LED chip, belonging to the technical field of LED chips, comprising the steps of (1) cleaning and brushing the chip in absolute ethyl alcohol solution and deionized water in sequence, (2) cleaning and brushing the chip in acetic acid solution and deionized water in sequence; (3) placing the chip in a mixed solution consisting of acid, deionized water and fluoride for cleaning, and then taking out and placing the chip under the deionized water for rinsing; (4) placing the chip in a cleaning machine for high-pressure deionized water cleaning and nitrogen blow-drying; (5) and taking out the chip, placing the chip on a heating table, and baking to thoroughly remove water vapor. The method has the advantages of low raw material consumption, simple steps, simple and convenient operation and low treatment cost, can effectively remove surface abnormalities such as pollution, residual reagent, roughness and the like on the surface of the chip, and improves the quality and yield of the chip.

Description

一种改善LED芯片表面污染的处理方法A treatment method for improving surface contamination of LED chips

技术领域technical field

本发明涉及一种改善LED芯片表面污染的处理方法,属于LED芯片技术领域。The invention relates to a treatment method for improving the surface pollution of LED chips, belonging to the technical field of LED chips.

背景技术Background technique

LED照明技术发展十分迅速,自上世纪60年代以来,有关数据统计表明,LED成本每隔十年下降十倍,而发光效率则每隔十年提高十倍,目前已在生活照明、交通信号、建筑装饰、景观、户外显示、背光源、玩具、服饰等各个方面为人们所接受,同时LED技术也在不断的升级和创新,满足人类生产、生活的不同需要。LED lighting technology has developed very rapidly. Since the 1960s, relevant statistics show that the cost of LEDs has dropped tenfold every ten years, while the luminous efficiency has increased tenfold every ten years. Building decoration, landscape, outdoor display, backlight, toys, clothing and other aspects are accepted by people. At the same time, LED technology is constantly being upgraded and innovated to meet the different needs of human production and life.

LED的生产过程中,LED芯片的生产是影响产品成本、指标及销售的重要因素。众所周知,LED芯片的制作需要经过金属镀膜、图形制作、衬底减薄、芯片切割、测试、封装等多个工步作业,任何一个工步出现问题将直接影响芯片的最终质量,导致芯片轻则降档,严重的直接报废,最终影响产品成本和效益。因此,只有在芯片的制作过程中进行严格的控制才能有效的保证芯片最终质量,即便如此,芯片外观异常或多或少依然是无法避免的,主要是因为设备、工艺、人为、环境、原材料等方面的因素无法做到精确的控制,即便做到,相关的资金投入也会使产品成本大幅提高,仍然对最终产品效益无益。In the LED production process, the production of LED chips is an important factor affecting product cost, indicators and sales. As we all know, the production of LED chips needs to go through multiple steps such as metal coating, pattern production, substrate thinning, chip cutting, testing, packaging, etc. Any problems in any step will directly affect the final quality of the chip. Downshifting, severe direct scrapping, ultimately affects product cost and benefit. Therefore, only strict control during the production process of the chip can effectively ensure the final quality of the chip. Even so, the abnormal appearance of the chip is more or less unavoidable, mainly because of equipment, technology, man-made, environment, raw materials, etc. The factors cannot be precisely controlled. Even if it is done, the related capital investment will greatly increase the product cost, which is still not beneficial to the final product benefit.

LED芯片制作过程中常见的表面异常主要是污染、掉电极、难焊线、电极腐蚀、外观不良等,其中最易出现的就是表面污染问题,难焊线、掉电极往往也与表面污染有十分重要的关联。目前业界LED芯片电极表面的金属电极材质主要为金或铝,金电极相对铝电极在稳定性、质量方面要好,但成本高,因此大多数LED生产厂家的电极材质依然选择铝电极,铝性质活泼,易受酸碱腐蚀,对溶液及环境的酸碱性反应较为敏感,这就是铝电极易出现表面异常的主要原因,当然与电极蒸镀表面粗糙度也有一定关联。除此之外,芯片正常制作过程中,因经过多步的有机、无机试剂以及热氮烘干作业,芯片表面也易出现试剂残留等污染,普通的二次清洗并不能有效去除。常规的处理LED芯片表面污染的方法主要是通过使用有机溶剂清洗或使用打胶机、刻蚀机等对芯片表面进行物理轰击去除表面污染物,但效果有限,且往往带来新的质量问题,最终芯片大多数逃脱不了质量降档的结果且处理方法影响的成本、效率也是一种损失。The common surface abnormalities in the LED chip manufacturing process are mainly pollution, electrode loss, difficult wire bonding, electrode corrosion, and poor appearance. important association. At present, the metal electrode material on the surface of the LED chip electrode in the industry is mainly gold or aluminum. Compared with the aluminum electrode, the gold electrode is better in stability and quality, but the cost is high. Therefore, most LED manufacturers still choose the aluminum electrode as the electrode material. , It is susceptible to acid and alkali corrosion, and is more sensitive to the acid and alkali reaction of the solution and the environment. This is the main reason why the aluminum electrode is prone to surface abnormalities. Of course, it is also related to the surface roughness of the electrode evaporation. In addition, during the normal production process of the chip, due to the multi-step organic and inorganic reagents and hot nitrogen drying operations, the surface of the chip is prone to contamination such as reagent residues, which cannot be effectively removed by ordinary secondary cleaning. Conventional methods for dealing with surface contamination of LED chips are mainly to remove surface contaminants by cleaning with organic solvents or physically bombarding the chip surface with a gluer, etching machine, etc., but the effect is limited and often brings new quality problems. Most of the final chips cannot escape the result of quality downgrade, and the cost and efficiency of the processing method are also a loss.

目前暂未发现有关LED芯片污染、粗糙、难焊线等表面异常问题改善方法的报导。At present, there is no report on the improvement of surface abnormalities such as contamination, roughness, and difficult-to-bond lines of LED chips.

发明内容SUMMARY OF THE INVENTION

针对现有技术的不足,本发明提供一种简单易行、提高产品良率和效益的一种简便的改善LED芯片表面污染的处理方法,该方法仅需常规的无机溶液、羊毛刷、清洗机即可对常规的芯片表面有机或无机残留胶、残留污染物、氧化层等实现有效改善,达到产品的外观要求,不影响后续的产品质量和销售,保证产品效益。In view of the deficiencies of the prior art, the present invention provides a simple and easy treatment method for improving the surface contamination of LED chips, which is simple and easy to implement, improves product yield and benefits, and only requires conventional inorganic solutions, wool brushes, and cleaning machines. It can effectively improve the organic or inorganic residual glue, residual pollutants, oxide layer, etc. on the conventional chip surface to meet the appearance requirements of the product, without affecting the subsequent product quality and sales, and ensuring product benefits.

本发明的技术方案如下:The technical scheme of the present invention is as follows:

一种改善LED芯片表面污染的处理方法,包括如下步骤:A treatment method for improving surface contamination of LED chips, comprising the following steps:

(1)将芯片置于无水乙醇溶液中清洗,然后取出使用羊毛刷子蘸取无水乙醇对芯片表面进行轻轻刷洗,然后将芯片置于去离子水下冲洗;(1) Place the chip in anhydrous ethanol solution for cleaning, then take out and use a wool brush to dip in anhydrous ethanol to gently brush the surface of the chip, and then place the chip in deionized water to rinse;

(2)将芯片置于乙酸水溶液中清洗,然后取出使用羊毛刷子蘸取乙酸水溶液对芯片表面进行轻轻刷洗,然后将芯片置于去离子水下冲洗;(2) place the chip in the acetic acid aqueous solution for cleaning, then take out and use a wool brush to dip the acetic acid aqueous solution to gently brush the surface of the chip, and then place the chip in deionized water to rinse;

(3)将芯片置于酸、去离子水、氟化物组成的混合溶液中清洗,然后迅速取出置于去离子水下冲洗;所述的酸为乙酸、甲酸、氢硫酸、草酸、偏铝酸、次氯酸、氢氟酸中的一种或一种以上,所述的氟化物为氟化铵、氟化钠、氟化氢钠、氟化铝中的一种或一种以上;(3) The chip is placed in the mixed solution of acid, deionized water, fluoride and washed, and then quickly taken out and placed in deionized water to rinse; the acid is acetic acid, formic acid, hydrosulfuric acid, oxalic acid, metaaluminate , one or more of hypochlorous acid and hydrofluoric acid, and the fluoride is one or more of ammonium fluoride, sodium fluoride, sodium bifluoride, and aluminum fluoride;

(4)将芯片置于1000-5000转/分的清洗机中进行高压去离子水清洗、氮气吹干;(4) Place the chip in a cleaning machine at 1000-5000 rpm for high-pressure deionized water cleaning and nitrogen drying;

(5)将芯片取出置于加热台上烘烤,彻底去除水汽;(5) Take out the chip and place it on the heating table to bake to completely remove the water vapor;

(6)在显微镜下检验芯片表面污染的改善效果,若处理完全结束处理,若仍需改善返回步骤(1)。(6) Check the improvement effect of the chip surface contamination under the microscope. If the treatment is completely finished, if the improvement still needs to be improved, go back to step (1).

根据本发明优选的,步骤(1)中,芯片置于无水乙醇溶液中清洗10-30s;使用刷子对整个芯片表面刷洗1-6次;然后将芯片置于去离子水下冲洗10-30s。Preferably according to the present invention, in step (1), the chip is placed in an anhydrous ethanol solution for cleaning for 10-30s; the entire surface of the chip is scrubbed 1-6 times with a brush; then the chip is placed in deionized water for 10-30s rinse .

进一步优选的,步骤(1)中,所述无水乙醇为分析纯,纯度≥99.7%;所述去离子水电导率≤0.2μs/cm。Further preferably, in step (1), the absolute ethanol is analytically pure, with a purity of ≥99.7%; the conductivity of the deionized water is ≤0.2 μs/cm.

根据本发明优选的,步骤(2)中,乙酸水溶液的体积比为2%-10%;在乙酸水溶液中清洗1-5min;使用刷子对整个芯片表面刷洗1-6次;然后将芯片置于去离子水下冲洗10-30s。Preferably according to the present invention, in step (2), the volume ratio of the acetic acid aqueous solution is 2%-10%; cleaning in the acetic acid aqueous solution for 1-5min; using a brush to brush the entire chip surface 1-6 times; then placing the chip on the Rinse with deionized water for 10-30s.

进一步优选的,步骤(2)中,所述乙酸水溶液中的乙酸为分析纯,纯度>99%。Further preferably, in step (2), the acetic acid in the acetic acid aqueous solution is analytically pure, and the purity is more than 99%.

根据本发明优选的,步骤(3)中,酸、氟化物、去离子水的重量比分别为酸1%-20%、氟化物1%-20%、去离子水60%-98%。Preferably according to the present invention, in step (3), the weight ratios of acid, fluoride and deionized water are respectively 1%-20% of acid, 1%-20% of fluoride, and 60%-98% of deionized water.

进一步优选的,步骤(3)中,所述乙酸、甲酸、氢硫酸、草酸、偏铝酸、次氯酸、氟化铵、氟化钠、氟化氢钠、氟化铝、氢氟酸为分析纯,纯度≥95%。Further preferably, in step (3), the acetic acid, formic acid, hydrosulfuric acid, oxalic acid, metaaluminate, hypochlorous acid, ammonium fluoride, sodium fluoride, sodium hydrogen fluoride, aluminum fluoride, and hydrofluoric acid are of analytical grade. , purity ≥95%.

进一步优选的,步骤(3)中,将芯片置于混合溶液中清洗1-30s;再置于去离子水下冲洗30-60s。Further preferably, in step (3), the chip is placed in the mixed solution for cleaning for 1-30s, and then placed in deionized water for washing for 30-60s.

根据本发明优选的,步骤(4)中,所述氮气纯度>99.9%。Preferably according to the present invention, in step (4), the purity of the nitrogen gas is greater than 99.9%.

根据本发明优选的,步骤(5)中,将芯片置于40-80℃的加热台上烘烤5-30分钟。According to a preferred embodiment of the present invention, in step (5), the chip is placed on a heating table at 40-80° C. to bake for 5-30 minutes.

本发明的有益效果在于:The beneficial effects of the present invention are:

本发明去除表面常规有机物后,直接借助酸性溶液对铝电极表面进行细微腐蚀,再结合毛刷将芯片电极表面污染物去除。冲洗后进行烘烤主要用于改善铝电极因酸性溶液处理后表面较为活泼而易发生氧化的现象,通过烘烤可以快速去除水汽,使表面活性下降,避免出现表面异常。After the conventional organic matter on the surface is removed by the invention, the surface of the aluminum electrode is directly corroded by an acid solution, and the contaminants on the surface of the chip electrode are removed by combining with a brush. Baking after rinsing is mainly used to improve the phenomenon that the surface of the aluminum electrode is prone to oxidation because the surface is relatively active after being treated with an acidic solution. By baking, the water vapor can be quickly removed, the surface activity is reduced, and surface abnormalities are avoided.

本发明原材料消耗少、成本低,步骤简单,操作简便,有效改善了芯片表面的各种污染、试剂残留、电极粗糙等,提高了产品良率,保证了后续产品的效益。The invention has low consumption of raw materials, low cost, simple steps and simple operation, effectively improves various contaminations on the chip surface, residual reagents, rough electrodes, etc., improves product yield, and ensures the benefits of subsequent products.

附图说明Description of drawings

图1是本发明实施例1同一芯片表面污染处理前的示意图。FIG. 1 is a schematic diagram of the same chip surface before contamination treatment in Example 1 of the present invention.

图2是本发明实施例1同一芯片表面污染处理后的示意图。FIG. 2 is a schematic diagram of the same chip surface after contamination treatment in Example 1 of the present invention.

具体实施方式Detailed ways

下面通过实施例并结合附图对本发明做进一步说明,但不限于此。The present invention will be further described below with reference to the embodiments and the accompanying drawings, but is not limited thereto.

实施例1Example 1

一种改善LED芯片表面污染的处理方法,包括如下步骤:A treatment method for improving surface contamination of LED chips, comprising the following steps:

(1)将芯片置于纯度为99.7%的无水乙醇溶液中清洗15s,然后取出使用羊毛刷蘸取无水乙醇对芯片表面进行轻轻刷洗,整个芯片表面刷洗3次,然后将芯片置于电导率为0.2μs/cm去离子水下冲洗10s;(1) Clean the chip in 99.7% pure ethanol solution for 15s, then take it out and use a wool brush dipped in absolute ethanol to gently brush the chip surface, brush the entire chip surface 3 times, and then place the chip on the Rinse with deionized water for 10s with conductivity of 0.2μs/cm;

(2)将芯片置于体积比为5%的乙酸(纯度99.6%)水溶液中清洗3分钟,然后取出使用羊毛刷蘸取乙酸水溶液对芯片表面进行轻轻刷洗,整个芯片表面刷洗3次,然后将芯片置于去离子水下冲洗12s;(2) Place the chip in an aqueous solution of acetic acid (purity 99.6%) with a volume ratio of 5% for 3 minutes, then take it out and use a wool brush dipped in the acetic acid aqueous solution to gently brush the surface of the chip, and brush the entire chip surface 3 times, then Rinse the chip in deionized water for 12s;

(3)将芯片置于乙酸(纯度96%)、次氯酸(纯度97%)、氟化铵(纯度97%)、去离子水组成的混合溶液中(重量比分别为乙酸2%、次氯酸1%、氟化铵2%、去离子水95%)清洗3s,然后迅速取出置于去离子水下冲洗50s;(3) Place the chip in a mixed solution consisting of acetic acid (purity 96%), hypochlorous acid (purity 97%), ammonium fluoride (purity 97%), and deionized water (weight ratios are 2% acetic acid, 2% Chloric acid 1%, ammonium fluoride 2%, deionized water 95%) for 3s, then quickly take it out and rinse with deionized water for 50s;

(4)将芯片置于3000转/分的清洗机中进行高压去离子水清洗、氮气(纯度99.99%)吹干;(4) The chip is placed in a cleaning machine at 3000 rpm for high-pressure deionized water cleaning and nitrogen (purity 99.99%) drying;

(5)将芯片取出置于60℃的加热台上烘烤15分钟,彻底去除水汽;(5) Take the chip out and bake it on a heating table at 60°C for 15 minutes to completely remove the water vapor;

(6)在显微镜下检验芯片表面污染得到有效改善,如图2所示,芯片表面的污染得到改善,使用本处理方法,可使受污染芯片合格率达到95%以上。(6) The contamination of the chip surface is effectively improved under the microscope. As shown in Figure 2, the contamination of the chip surface is improved. Using this treatment method, the qualified rate of the contaminated chip can reach more than 95%.

实施例2Example 2

一种改善LED芯片表面污染的处理方法,包括如下步骤:A treatment method for improving surface contamination of LED chips, comprising the following steps:

(1)将芯片置于纯度为99.8%的无水乙醇溶液中清洗12s,然后取出使用羊毛刷蘸取无水乙醇对芯片表面进行轻轻刷洗,整个芯片表面刷洗2次,然后将芯片置于电导率为0.18μs/cm去离子水下冲洗14s;(1) Clean the chip in 99.8% pure ethanol solution for 12s, then take it out and use a wool brush dipped in absolute ethanol to gently brush the chip surface, brush the entire chip surface twice, and then place the chip on the Rinse in deionized water for 14s with conductivity of 0.18μs/cm;

(2)将芯片置于体积比为3%的乙酸(纯度99.7%)水溶液中清洗4分钟,然后取出使用羊毛刷蘸取乙酸水溶液对芯片表面进行轻轻刷洗,整个芯片表面刷洗4次,然后将芯片置于去离子水下冲洗20s;(2) Place the chip in an aqueous solution of acetic acid (purity 99.7%) with a volume ratio of 3% for 4 minutes, then take it out and use a wool brush dipped in the acetic acid aqueous solution to gently brush the surface of the chip. The entire chip surface is brushed 4 times, and then Rinse the chip in deionized water for 20s;

(3)将芯片置于草酸(纯度99%)、氢硫酸(纯度96%)、氟化钠(纯度98%)、去离子水组成的混合溶液中(重量比分别为草酸6%、氢硫酸5%、氟化钠8%、去离子水81%)清洗3s,,然后迅速取出置于去离子水下冲洗40s;(3) The chip was placed in a mixed solution composed of oxalic acid (purity 99%), hydrosulfuric acid (purity 96%), sodium fluoride (purity 98%), and deionized water (weight ratios were 6% oxalic acid, 6% hydrosulfuric acid, respectively) 5%, sodium fluoride 8%, deionized water 81%) for 3s, then quickly take it out and rinse with deionized water for 40s;

(4)将芯片置于4000转/分的清洗机中进行高压去离子水清洗、氮气(纯度99.999%)吹干;(4) The chip is placed in a cleaning machine at 4000 rpm for high-pressure deionized water cleaning and nitrogen (purity 99.999%) drying;

(5)将芯片取出置于51℃的加热台上烘烤18分钟,彻底去除水汽;(5) Take the chip out and bake it on a heating table at 51°C for 18 minutes to completely remove the water vapor;

(6)在显微镜下检验芯片表面污染得到有效改善。(6) The contamination of the chip surface was effectively improved under the microscope.

实施例3Example 3

一种改善LED芯片表面污染的处理方法,包括如下步骤:A treatment method for improving surface contamination of LED chips, comprising the following steps:

(1)将芯片置于纯度为99.7%的无水乙醇溶液中清洗26s,然后取出使用羊毛刷蘸取无水乙醇对芯片表面进行轻轻刷洗,整个芯片表面刷洗6次,然后将芯片置于电导率为0.17μs/cm去离子水下冲洗20s;(1) Clean the chip in 99.7% pure ethanol solution for 26s, then take out and use a wool brush dipped in anhydrous ethanol to gently brush the chip surface, brush the entire chip surface 6 times, and then place the chip on Rinse in deionized water for 20s with conductivity of 0.17μs/cm;

(2)将芯片置于体积比为8%的乙酸(纯度99.8%)水溶液中清洗2min,然后取出使用羊毛刷蘸取乙酸水溶液对芯片表面进行轻轻刷洗,整个芯片表面刷洗2次,然后将芯片置于去离子水下冲洗21s;(2) Place the chip in an aqueous solution of acetic acid (purity 99.8%) with a volume ratio of 8% for 2 minutes, then take it out and use a wool brush to dip the acetic acid aqueous solution to gently brush the chip surface. The entire chip surface is brushed twice, and then the The chip was rinsed in deionized water for 21s;

(3)将芯片置于次氯酸(纯度96%)、氢氟酸(纯度97%)、氟化铵(纯度95%)、氟化氢钠(纯度98%)、去离子水组成的混合溶液中(重量比分别为次氯酸3%、氢氟酸0.5%、氟化铵2%、氟化氢钠2%、去离子水92.5%)清洗5s,然后迅速取出置于去离子水下冲洗59s;(3) Place the chip in a mixed solution composed of hypochlorous acid (purity 96%), hydrofluoric acid (purity 97%), ammonium fluoride (purity 95%), sodium hydrogen fluoride (purity 98%), and deionized water (weight ratios are 3% hypochlorous acid, 0.5% hydrofluoric acid, 2% ammonium fluoride, 2% sodium hydrogen fluoride, and 92.5% deionized water) for 5s, then quickly take out and rinse with deionized water for 59s;

(4)将芯片置于4200转/分的清洗机中进行高压去离子水清洗、氮气(纯度99.99%)吹干;(4) The chip is placed in a cleaning machine at 4200 rpm for high-pressure deionized water cleaning and nitrogen (purity 99.99%) drying;

(5)将芯片取出置于72℃的加热台上烘烤28分钟,彻底去除水汽;(5) Take the chip out and bake it on a heating table at 72°C for 28 minutes to completely remove the water vapor;

(6)在显微镜下检验芯片表面污染得到有效改善。(6) The contamination of the chip surface was effectively improved under the microscope.

实施例4Example 4

一种改善LED芯片表面污染的处理方法,其步骤如实施例1所述,所不同的是,步骤(1)中,将芯片置于纯度为99.7%的无水乙醇溶液中清洗10s,然后取出使用羊毛刷蘸取无水乙醇对芯片表面进行轻轻刷洗,整个芯片表面刷洗6次,然后将芯片置于电导率为0.2μs/cm去离子水下冲洗30s。A treatment method for improving surface contamination of LED chips, the steps of which are as described in Embodiment 1, the difference is that in step (1), the chips are placed in a 99.7% pure ethanol solution for cleaning for 10s, and then taken out Use a wool brush dipped in anhydrous ethanol to gently brush the chip surface, brush the entire chip surface 6 times, and then rinse the chip in deionized water with a conductivity of 0.2 μs/cm for 30 s.

实施例5Example 5

一种改善LED芯片表面污染的处理方法,其步骤如实施例4所述,所不同的是,步骤(1)中,将芯片置于纯度为99.7%的无水乙醇溶液中清洗30s,然后取出使用羊毛刷蘸取无水乙醇对芯片表面进行轻轻刷洗,整个芯片表面刷洗1次,然后将芯片置于电导率为0.2μs/cm去离子水下冲洗10s。A treatment method for improving the surface pollution of LED chips, the steps of which are as described in Example 4, the difference is that in step (1), the chips are placed in a 99.7% pure ethanol solution for cleaning for 30s, and then taken out Use a wool brush dipped in anhydrous ethanol to gently brush the chip surface, brush the entire chip surface once, and then rinse the chip in deionized water with a conductivity of 0.2 μs/cm for 10 s.

实施例6Example 6

一种改善LED芯片表面污染的处理方法,其步骤如实施例1所述,所不同的是,步骤(2)中,将芯片置于体积比为2%的乙酸(纯度99.6%)水溶液中清洗5分钟,然后取出使用羊毛刷蘸取乙酸水溶液对芯片表面进行轻轻刷洗,整个芯片表面刷洗1次,然后将芯片置于去离子水下冲洗10s。A treatment method for improving surface contamination of LED chips, the steps of which are as described in Example 1, the difference is that in step (2), the chips are placed in an aqueous solution of acetic acid (purity 99.6%) with a volume ratio of 2% for cleaning After 5 minutes, take out and use a wool brush dipped in acetic acid aqueous solution to gently brush the chip surface, brush the entire chip surface once, and then rinse the chip in deionized water for 10s.

实施例7Example 7

一种改善LED芯片表面污染的处理方法,其步骤如实施例6所述,所不同的是,步骤(2)中,将芯片置于体积比为10%的乙酸(纯度99.6%)水溶液中清洗1分钟,然后取出使用羊毛刷蘸取乙酸水溶液对芯片表面进行轻轻刷洗,整个芯片表面刷洗6次,然后将芯片置于去离子水下冲洗30s。A treatment method for improving surface pollution of LED chips, the steps of which are as described in Example 6, the difference is that in step (2), the chips are placed in an aqueous solution of acetic acid (purity 99.6%) with a volume ratio of 10% for cleaning After 1 minute, take out and use a wool brush dipped in acetic acid aqueous solution to gently brush the chip surface, brush the entire chip surface 6 times, and then rinse the chip in deionized water for 30s.

实施例8Example 8

一种改善LED芯片表面污染的处理方法,其步骤如实施例1所述,所不同的是,步骤(3)中,将芯片置于甲酸(纯度95%)、偏铝酸(纯度95%)、氟化铝(纯度95%)、去离子水组成的混合溶液中(重量比分别为甲酸2%、偏铝酸1%、氟化铝2%、去离子水95%)清洗30s,然后迅速取出置于去离子水下冲洗60s。A treatment method for improving the surface pollution of LED chips, the steps of which are as described in Example 1, the difference is that in step (3), the chips are placed in formic acid (purity 95%), meta-aluminate (purity 95%) , aluminum fluoride (purity 95%), and deionized water (weight ratios are 2% formic acid, 1% metaaluminate, 2% aluminum fluoride, and 95% deionized water) for 30s, and then quickly Take out and rinse with deionized water for 60s.

实施例9Example 9

一种改善LED芯片表面污染的处理方法,其步骤如实施例8所述,所不同的是,步骤(3)中,将芯片置于混合溶液中清洗1s,然后迅速取出置于去离子水下冲洗30s。A treatment method for improving the surface contamination of LED chips, the steps are as described in Example 8, the difference is that in step (3), the chip is placed in a mixed solution for cleaning for 1 s, and then quickly taken out and placed in deionized water Rinse for 30s.

实施例10Example 10

一种改善LED芯片表面污染的处理方法,其步骤如实施例1所述,所不同的是,步骤(4)中,将芯片置于1000转/分的清洗机中进行高压去离子水清洗、氮气(纯度99.99%)吹干。A treatment method for improving the surface pollution of LED chips, the steps of which are as described in Embodiment 1, the difference is that in step (4), the chips are placed in a cleaning machine at 1000 rpm for high-pressure deionized water cleaning, Blow dry with nitrogen (99.99% purity).

实施例11Example 11

一种改善LED芯片表面污染的处理方法,其步骤如实施例1所述,所不同的是,步骤(4)中,将芯片置于5000转/分的清洗机中进行高压去离子水清洗、氮气(纯度99.99%)吹干。A treatment method for improving the surface pollution of LED chips, the steps of which are as described in Embodiment 1, the difference is that in step (4), the chips are placed in a cleaning machine at 5000 rpm for high-pressure deionized water cleaning, Blow dry with nitrogen (99.99% purity).

实施例12Example 12

一种改善LED芯片表面污染的处理方法,其步骤如实施例1所述,所不同的是,步骤(5)中,将芯片取出置于80℃的加热台上烘烤5分钟,彻底去除水汽。A treatment method for improving surface contamination of LED chips, the steps of which are as described in Example 1, the difference is that in step (5), the chip is taken out and placed on a heating table at 80°C for 5 minutes to completely remove water vapor .

实施例13Example 13

一种改善LED芯片表面污染的处理方法,其步骤如实施例1所述,所不同的是,步骤(5)中,将芯片取出置于40℃的加热台上烘烤30分钟,彻底去除水汽。A treatment method for improving surface contamination of LED chips, the steps of which are as described in Example 1, the difference is that in step (5), the chip is taken out and placed on a heating table at 40°C for 30 minutes to completely remove water vapor .

Claims (5)

1.一种改善LED芯片表面污染的处理方法,其特征在于,包括如下步骤:1. a processing method for improving LED chip surface pollution, is characterized in that, comprises the steps: (1)将芯片置于无水乙醇溶液中清洗10-30s,然后取出使用刷子蘸取无水乙醇对芯片表面进行刷洗1-6次,然后将芯片置于去离子水下冲洗10-30s;(1) Clean the chip in anhydrous ethanol solution for 10-30s, then take out and use a brush to dip in anhydrous ethanol to brush the surface of the chip for 1-6 times, and then place the chip in deionized water to rinse for 10-30s; (2)将芯片置于乙酸水溶液中清洗1-5min,乙酸水溶液的体积比为2%-10%,然后取出使用刷子蘸取乙酸水溶液对芯片表面进行刷洗1-6次,然后将芯片置于去离子水下冲洗10-30s;(2) Clean the chip in acetic acid aqueous solution for 1-5min, the volume ratio of acetic acid aqueous solution is 2%-10%, then take out and use a brush to dip the acetic acid aqueous solution to brush the surface of the chip for 1-6 times, and then place the chip on Rinse with deionized water for 10-30s; (3)将芯片置于酸、去离子水、氟化物组成的混合溶液中清洗1-30s,酸、氟化物、去离子水的重量比分别为酸1%-20%、氟化物1%-20%、去离子水60%-98%,然后取出置于去离子水下冲洗30-60s;所述的酸为乙酸、甲酸、氢硫酸、草酸、偏铝酸、次氯酸、氢氟酸中的一种或一种以上,所述的氟化物为氟化铵、氟化钠、氟化氢钠、氟化铝中的一种或一种以上;(3) Place the chip in a mixed solution composed of acid, deionized water, and fluoride for 1-30s. The weight ratio of acid, fluoride, and deionized water is 1%-20% acid, 1% 20%, deionized water 60%-98%, then take out and rinse with deionized water for 30-60s; the acids are acetic acid, formic acid, hydrogen sulfuric acid, oxalic acid, metaaluminate, hypochlorous acid, hydrofluoric acid In one or more, described fluoride is one or more in ammonium fluoride, sodium fluoride, sodium bifluoride, aluminum fluoride; (4)将芯片置于1000-5000转/分的清洗机中进行高压去离子水清洗、氮气吹干;(4) Place the chip in a cleaning machine at 1000-5000 rpm for high-pressure deionized water cleaning and nitrogen drying; (5)将芯片取出置于40-80℃的加热台上烘烤5-30分钟;(5) Take the chip out and bake it on a heating table at 40-80°C for 5-30 minutes; (6)在显微镜下检验芯片表面污染的改善效果,若处理完全结束处理,若仍需改善返回步骤(1)。(6) Check the improvement effect of the chip surface contamination under the microscope. If the treatment is completely finished, if the improvement still needs to be improved, go back to step (1). 2.根据权利要求1所述的改善LED芯片表面污染的处理方法,其特征在于,步骤(1)中,所述无水乙醇为分析纯,纯度≥99.7%;所述去离子水电导率≤0.2μs/cm。2. The treatment method for improving LED chip surface pollution according to claim 1, wherein in step (1), the absolute ethanol is analytically pure, and the purity is ≥99.7%; the conductivity of the deionized water is ≤ 0.2μs/cm. 3.根据权利要求1所述的改善LED芯片表面污染的处理方法,其特征在于,步骤(2)中,所述乙酸水溶液中的乙酸为分析纯,纯度>99%。3 . The treatment method for improving LED chip surface pollution according to claim 1 , wherein, in step (2), the acetic acid in the acetic acid aqueous solution is analytically pure, and the purity is more than 99%. 4 . 4.根据权利要求1所述的改善LED芯片表面污染的处理方法,其特征在于,步骤(3)中,所述乙酸、甲酸、氢硫酸、草酸、偏铝酸、次氯酸、氟化铵、氟化钠、氟化氢钠、氟化铝、氢氟酸为分析纯,纯度≥95%。4. The treatment method for improving LED chip surface pollution according to claim 1, wherein in step (3), the acetic acid, formic acid, hydrosulfuric acid, oxalic acid, metaaluminate, hypochlorous acid, ammonium fluoride , Sodium fluoride, sodium hydrogen fluoride, aluminum fluoride, and hydrofluoric acid are of analytical grade, with a purity of ≥95%. 5.根据权利要求1所述的改善LED芯片表面污染的处理方法,其特征在于,步骤(4)中,所述氮气纯度>99.9%。5 . The treatment method for improving LED chip surface contamination according to claim 1 , wherein in step (4), the nitrogen purity is greater than 99.9%. 6 .
CN201811233650.5A 2018-10-23 2018-10-23 A treatment method for improving surface contamination of LED chips Active CN111092011B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811233650.5A CN111092011B (en) 2018-10-23 2018-10-23 A treatment method for improving surface contamination of LED chips

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811233650.5A CN111092011B (en) 2018-10-23 2018-10-23 A treatment method for improving surface contamination of LED chips

Publications (2)

Publication Number Publication Date
CN111092011A CN111092011A (en) 2020-05-01
CN111092011B true CN111092011B (en) 2022-09-16

Family

ID=70391815

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811233650.5A Active CN111092011B (en) 2018-10-23 2018-10-23 A treatment method for improving surface contamination of LED chips

Country Status (1)

Country Link
CN (1) CN111092011B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113436808B (en) * 2021-06-16 2022-09-13 珠海格力电工有限公司 Method for cleaning guide wheel before production of low-silicon-content enameled wire
CN113823713B (en) * 2021-08-12 2023-07-14 苏州浪潮智能科技有限公司 A laser-assisted method for improving the surface blooming of LED chip ITO

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1812057A (en) * 2005-01-28 2006-08-02 联华电子股份有限公司 Method for cleaning semiconductor chips
CN102543681A (en) * 2012-02-09 2012-07-04 上海先进半导体制造股份有限公司 Method for removing gold-containing metal from back of chip
CN103182384A (en) * 2011-12-31 2013-07-03 中芯国际集成电路制造(上海)有限公司 Method for washing surface of bonding pad
CN103681241A (en) * 2013-12-18 2014-03-26 无锡中微晶园电子有限公司 Cleaning method capable of improving quality of oxide layer
CN108630522A (en) * 2017-03-22 2018-10-09 东莞新科技术研究开发有限公司 The cleaning method of chip surface

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6165956A (en) * 1997-10-21 2000-12-26 Lam Research Corporation Methods and apparatus for cleaning semiconductor substrates after polishing of copper film
CN101979160B (en) * 2010-05-21 2014-05-14 北京天科合达蓝光半导体有限公司 Method for cleaning pollutants on surface of silicon carbide wafer
CN102671894A (en) * 2012-05-22 2012-09-19 南京大学 Method for cleaning surface of passivated GaAs substrate
CN103681245A (en) * 2013-12-26 2014-03-26 中国科学院微电子研究所 Method for cleaning and surface passivating germanium sheet
CN105161398A (en) * 2015-07-07 2015-12-16 桂林电子科技大学 GaAs (111) wafer cleaning method
CN105280477B (en) * 2015-09-28 2018-03-09 山东浪潮华光光电子股份有限公司 A kind of cleaning of sapphire wafer
CN108655101A (en) * 2017-03-29 2018-10-16 山东浪潮华光光电子股份有限公司 A kind of cleaning method of feux rouges GaAs chips

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1812057A (en) * 2005-01-28 2006-08-02 联华电子股份有限公司 Method for cleaning semiconductor chips
CN103182384A (en) * 2011-12-31 2013-07-03 中芯国际集成电路制造(上海)有限公司 Method for washing surface of bonding pad
CN102543681A (en) * 2012-02-09 2012-07-04 上海先进半导体制造股份有限公司 Method for removing gold-containing metal from back of chip
CN103681241A (en) * 2013-12-18 2014-03-26 无锡中微晶园电子有限公司 Cleaning method capable of improving quality of oxide layer
CN108630522A (en) * 2017-03-22 2018-10-09 东莞新科技术研究开发有限公司 The cleaning method of chip surface

Also Published As

Publication number Publication date
CN111092011A (en) 2020-05-01

Similar Documents

Publication Publication Date Title
CN104009122B (en) The do over again processing method of silicon chip of a kind of serigraphy
CN111092011B (en) A treatment method for improving surface contamination of LED chips
CN108231540A (en) A kind of rear cleaning applied to solar cell making herbs into wool
CN110473810A (en) Monocrystalline silicon process for etching and device
CN105280477A (en) Cleaning technology for sapphire wafers
CN106129190B (en) A kind of minimizing technology of LED electrode structure
CN110416369A (en) PERC battery cleaning and texturing process and system
CN108054243A (en) A kind of reworking method of bad of monocrystalline PERC solar cell plated films
CN105140336B (en) Polycrystalline silicon texturing and cleaning method
CN104218122A (en) Texturing method for decreasing polycrystalline silicon reflectivity during diamond wire cutting
CN103606595B (en) The recycling of the rear defective Monocrystalline silicon cell piece of sintering and grid line recovery method thereof
CN106684174A (en) Surface texturing method of polycrystalline silicon chips
CN105938793B (en) A cleaning process for back-plated wafers
CN105957800A (en) Substrate surface treatment process
CN106299023B (en) A kind of anti-PID solar cells are done over again the processing method of piece
CN106011866A (en) Chemical polishing surface treatment method of copper tube workpiece
CN106981547A (en) A kind of monocrystalline that handles is done over again the method for piece
CN103361734A (en) Method for improving output efficiency of polycrystalline silicon
CN108630522A (en) The cleaning method of chip surface
CN110518080A (en) A kind of reworking method of acid making herbs into wool polycrystalline battery
CN112768553B (en) Cleaning method for screen printing reworked sheet
CN115621370A (en) Reworking process for bad wafer after HJT amorphous silicon coating
CN103500772B (en) Slurry corrosion method prepares the process of polished backside polycrystalline silicon solar cell
CN111554774A (en) A kind of post-processing method of silicon wafer texturing
CN110021683A (en) A kind of cadmium telluride solar cell substrate processing technology

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant