CN110998265B - Torque detector and method for manufacturing torque detector - Google Patents
Torque detector and method for manufacturing torque detector Download PDFInfo
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- CN110998265B CN110998265B CN201880052321.2A CN201880052321A CN110998265B CN 110998265 B CN110998265 B CN 110998265B CN 201880052321 A CN201880052321 A CN 201880052321A CN 110998265 B CN110998265 B CN 110998265B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 10
- 238000000034 method Methods 0.000 title description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 70
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 69
- 239000010703 silicon Substances 0.000 claims abstract description 69
- 230000035945 sensitivity Effects 0.000 description 30
- 239000002184 metal Substances 0.000 description 17
- 239000000758 substrate Substances 0.000 description 12
- 238000010586 diagram Methods 0.000 description 6
- 238000001514 detection method Methods 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 4
- 230000001070 adhesive effect Effects 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
- 229910000679 solder Inorganic materials 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 239000005297 pyrex Substances 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L3/00—Measuring torque, work, mechanical power, or mechanical efficiency, in general
- G01L3/02—Rotary-transmission dynamometers
- G01L3/04—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft
- G01L3/10—Rotary-transmission dynamometers wherein the torque-transmitting element comprises a torsionally-flexible shaft involving electric or magnetic means for indicating
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L3/00—Measuring torque, work, mechanical power, or mechanical efficiency, in general
- G01L3/02—Rotary-transmission dynamometers
- G01L3/14—Rotary-transmission dynamometers wherein the torque-transmitting element is other than a torsionally-flexible shaft
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Pressure Sensors (AREA)
- Measurement Of Force In General (AREA)
- Force Measurement Appropriate To Specific Purposes (AREA)
Abstract
本发明提供一种扭矩检测器及扭矩检测器的制造方法。本发明包括：硅层(11)；电阻计(13)，形成于硅层(11)；槽部(111)，形成于硅层(11)的一面，使所述硅层(11)的形成有电阻计(13)的部位为薄壁部(112)；以及绝缘层(12)，与硅层(11)的一面接合。
The present invention provides a torque detector and a manufacturing method of the torque detector. The present invention comprises: a silicon layer (11); a resistance meter (13) formed on the silicon layer (11); a groove (111) formed on one side of the silicon layer (11), so that the silicon layer (11) can be formed The part with the resistance meter (13) is the thin part (112); and the insulating layer (12) is bonded to one surface of the silicon layer (11).
Description
Technical Field
The present invention relates to a torque detector that detects torque applied to a rotating shaft body and a method of manufacturing the torque detector.
Background
As one of the methods of detecting the torque applied to the rotary shaft body, there is a method of: metal strain gauges (strain gauges) are attached to the circumferential surface of the rotary shaft body, and the magnitude of shear stress generated in the circumferential surface of the rotary shaft body by torque is detected by the change in resistance values of the metal strain gauges. In the above-described aspect, four or more metal strain gauges are attached in a direction of 45 degrees with respect to the axial direction of the rotary shaft body to form a bridge circuit.
However, in the metal strain gauge, since the gauge factor (gauge factor) is small, it is difficult to detect a minute strain with high accuracy.
On the other hand, as a method of improving the torque detection sensitivity, a method of reducing the rigidity of the rotary shaft body and increasing the strain amount may be considered. In patent document 1, the sensitivity is improved by forming the beam portion by applying various kinds of processing to the rotational shaft body.
Documents of the prior art
Patent document
Patent document 1: japanese patent laid-open No. 2016-109568
Disclosure of Invention
Problems to be solved by the invention
However, in the case of reducing the rigidity of the rotary shaft body, a problem of hysteresis (hysteresis) due to an increase in stress (trade-off problem of sensitivity and hysteresis) occurs, and improvement of accuracy cannot be expected.
In addition, in the conventional method, at least four or more metal strain gauges need to be arranged. Therefore, it is necessary to precisely match the relative positions and angles of the metal strain gauges, which is difficult.
Here, in the industrial robot, detection of torque is indispensable for controlling the operation thereof. Therefore, from the beginning, a torque detector is attached to the industrial robot to detect the torque of each joint of the robot arm (robot arm).
On the other hand, in recent years, industrial robots are required to have safety that stops operation by instantaneously detecting contact when they come into contact with an object such as a person or an object in order to coexist with human beings and harmonics. However, since the industrial robot has its own weight and the weight of the object to be held, and is a strong housing in consideration of the operation speed, it is difficult to detect the torque with high accuracy in the conventional metal strain gauge.
The present invention has been made to solve the above-described problems, and an object thereof is to provide a torque detector with improved torque detection accuracy.
Means for solving the problems
The torque detector of the present invention is characterized by comprising: a substrate layer that generates strain according to an external force; a resistance gauge (resistance gauge) formed on the substrate layer; a groove portion formed on one surface of a substrate layer, wherein a part of the substrate layer where a resistance meter is formed is a thin-walled part; and an insulating layer bonded to one surface of the substrate layer.
ADVANTAGEOUS EFFECTS OF INVENTION
According to the present invention, the torque detection accuracy is improved because of the above configuration.
Drawings
Fig. 1A to 1C are diagrams showing a configuration example of a torque detector according to embodiment 1 of the present invention, fig. 1A being a top view, fig. 1B being a side view, and fig. 1C being a sectional view taken along line a-a'.
Fig. 2A is a top view showing an example of the arrangement of a resistance meter according to embodiment 1 of the present invention, and fig. 2B is a diagram showing an example of the configuration of a full bridge circuit including the resistance meter shown in fig. 2A.
Fig. 3 is a flowchart showing an example of a method for manufacturing a strain sensor according to embodiment 1 of the present invention.
Fig. 4A and 4B are views showing a state in which a strain sensor according to embodiment 1 of the present invention is attached to a rotary shaft body, fig. 4A being a top view, and fig. 4B being a side view.
Fig. 5A and 5B are diagrams illustrating a basic operation principle of the torque detector, fig. 5A is a side view showing a torque applied to the rotational shaft body, and fig. 5B is a diagram showing an example of a stress distribution generated in the strain sensor by the torque shown in fig. 5A.
Fig. 6A to 6C are top views showing another arrangement example of the resistance meter in embodiment 1 of the present invention.
Fig. 7A is a top view showing another example of the arrangement of the resistance meter according to embodiment 1 of the present invention, and fig. 7B and 7C are a top view and a side view showing a state in which a strain sensor including the resistance meter shown in fig. 7A is attached to a rotary shaft body.
Fig. 8A is a top view showing another example of the arrangement of the resistance meter according to embodiment 1 of the present invention, and fig. 8B is a diagram showing an example of the configuration of a half-bridge circuit including the resistance meter shown in fig. 8A.
Fig. 9A to 9C are rear views showing another example of the structure of the silicon layer in embodiment 1 of the present invention.
Fig. 10 is a rear view showing another configuration example of the silicon layer in embodiment 1 of the present invention.
Fig. 11A to 11C are top views showing an example of the dimensions of the strain sensor in embodiment 1 of the present invention.
Fig. 12 is a graph showing the difference in sensitivity due to the thickness of the insulating layer and the thickness of the bonding layer in embodiment 1 of the present invention.
Fig. 13A and 13B are top and side sectional views of a silicon layer in embodiment 1 of the present invention.
[ description of symbols ]
1: strain sensor
5: rotary shaft body
6: drive system
11: silicon layer (base layer)
12: insulating layer
13: resistance meter (diffusion resistance)
111: trough part
112: thin wall part
113: a communicating groove portion.
Detailed Description
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
Fig. 1A to 1C are diagrams showing a configuration example of a torque detector according to embodiment 1 of the present invention.
The torque detector detects a torque applied to the rotary shaft body 5 (see fig. 4A and 4B). The rotary shaft body 5 is connected at one end in the axial direction to a drive system 6 such as a motor, and connected at the other end to a load system such as a robot hand (robot hand). As shown in fig. 1A to 1C, the torque detector includes a strain sensor 1.
The strain sensor 1 is a semiconductor strain gauge that is attached to the rotational shaft body 5 and outputs a voltage corresponding to external shear stress (tensile stress and compressive stress). The strain sensor 1 is implemented by Micro Electro Mechanical Systems (MEMS). As shown in fig. 1A to 1C, 2A, and 2B, the strain sensor 1 includes a silicon layer (substrate layer) 11 and an insulating layer 12.
The silicon layer 11 is a single crystal silicon which is strained by an external force, and is a sensor layer including a Wheatstone bridge circuit (diffusion circuit) including a plurality of resistance meters (diffusion resistors) 13. The silicon layer 11 has a groove 111 formed in the center of the back surface (one surface). The thin portion 112 is formed in the silicon layer 11 by the groove portion 111. The resistance meter 13 is formed on the thin portion 112.
The thickness of the thin portion 112 is appropriately designed in accordance with the rigidity of the silicon layer 11 and the like. For example, when the rigidity of the silicon layer 11 is low, the thin portion 112 is made thick, and when the rigidity of the silicon layer 11 is high, the thin portion 112 is made thin.
Further, single crystal silicon has crystal anisotropy, and the piezoelectric resistivity is the largest in the <110> direction on the p-type silicon (100) plane. Therefore, the resistance meter 13 is formed, for example, in the <110> direction of the silicon layer 11 having the crystal orientation (100) on the surface.
Fig. 2A and 2B show the following cases: four resistance meters 13(R1 to R4) constituting a full bridge circuit (wheatstone bridge circuit) are formed in an oblique direction (45-degree direction) with respect to the side direction of the silicon layer 11, and the strain sensor 1 detects shear stress in both directions. Here, although a case in which the inclination direction is 45 degrees is shown as a specific example of the inclination direction, the inclination direction is not limited to the 45 degrees, and some deviation (for example, 44 degrees or 46 degrees) is allowed in the characteristics of the strain sensor 1.
The insulating layer 12 is a pedestal having an upper surface bonded to the back surface of the silicon layer 11 and a back surface bonded to the rotation shaft 5. As the insulating layer 12, for example, glass, sapphire, or the like can be used.
Next, an example of a method for manufacturing the strain sensor 1 will be described with reference to fig. 3.
In the method of manufacturing the strain sensor 1, as shown in fig. 3, first, a plurality of resistance meters 13 are formed in the silicon layer 11 by ion implantation (step ST 1). Next, a wheatstone bridge circuit is formed by the plurality of resistance meters 13.
Next, the groove 111 is formed in the back surface of the silicon layer 11 by etching (step ST 2). Therefore, the portion of the silicon layer 11 where the resistance meter 13 is formed is the thin portion 112.
Next, the back surface of the silicon layer 11 and the upper surface of the insulating layer 12 are bonded by, for example, anodic bonding (step ST 3).
When the strain sensor 1 manufactured as described above is mounted on the rotation shaft body 5, the back surface of the insulating layer 12 is bonded to the rotation shaft body 5 by, for example, solder bonding. At this time, the back surface of the insulating layer 12 and the joint portion of the rotational shaft body 5 are metalized, and then solder-joined. Fig. 4A and 4B show a state in which the strain sensor 1 is attached to the rotary shaft body 5. In fig. 4A, the arrangement position of the resistance meter 13 is also shown.
As shown in fig. 4A, the strain sensor 1 is disposed such that the resistance meter 13 is oriented in an oblique direction (45-degree direction) with respect to the axial direction of the rotation shaft body 5. That is, the resistance meter 13 is disposed so as to face the direction of generation of shear stress generated when torque is applied to the rotation shaft body 5. Here, although a case in which the inclination direction is 45 degrees is shown as a specific example of the inclination direction, the inclination direction is not limited to the 45 degrees, and some deviation (for example, 44 degrees or 46 degrees) is allowed in the characteristics of the strain sensor 1.
Next, the basic operation principle of the torque detector will be described with reference to fig. 5A and 5B. In fig. 5A, the following state is shown: a drive system 6 is connected to one end of the rotational shaft body 5 to which the strain sensor 1 is attached, and torque is applied to the rotational shaft body 5 by the drive system 6. Fig. 5A and 5B show a case where the rectangular strain sensor 1 is used.
As shown in fig. 5A, the strain sensor 1 attached to the rotational shaft body 5 is strained by applying a torque to the rotational shaft body 5, and a shear stress as shown in fig. 5B is generated on the surface of the strain sensor 1. In fig. 5B, the following state is shown: the darker the color, the stronger the tensile stress, and the lighter the color, the stronger the compressive stress. The resistance meter 13, which is inclined in the direction (45 degrees) with respect to the axial direction of the rotation shaft body 5, changes the resistance value in accordance with the shear stress, and the strain sensor 1 outputs a voltage in accordance with the change in the resistance value. Next, the torque detector detects the torque applied to the rotary shaft body 5 based on the voltage output from the strain sensor 1.
In the torque detector according to embodiment 1, the thin portion 112 is formed by forming the groove 111 in the center of the back surface of the silicon layer 11, and the resistance meter 13 is formed in the thin portion 112. Therefore, stress can be concentrated on the thin portion 112 where the resistance meter 13 is formed, and the sensitivity of detecting the torque applied to the rotation shaft body 5 can be improved.
Further, a resistance meter 13 is formed in an oblique direction (45-degree direction) with respect to the side direction of the silicon layer 11. Therefore, the resistance value change due to the expansion and contraction of the silicon layer 11 hardly occurs. Since the four resistance meters 13 are affected by the same factor, the output fluctuation is theoretically zero.
The arrangement of the four resistance meters 13 is not limited to the arrangement shown in fig. 2A and 2B, and may be, for example, the arrangement shown in fig. 6A to 6C.
In addition, the case where the resistance meter 13 is formed in an oblique direction (45-degree direction) with respect to the side direction of the silicon layer 11 is described above. However, the resistance meter 13 is not limited to this, and may be formed in the <110> direction of the silicon layer 11, and for example, as shown in fig. 7A, the resistance meter 13 may be formed along the side direction (in the 0 degree direction and the 90 degree direction) of the silicon layer 11. In this case, as shown in fig. 7B and 7C, the strain sensor 1 is disposed such that the resistance meter 13 is inclined in a direction (45-degree direction) with respect to the axial direction of the rotation shaft body 5. Here, although a case in which the inclination direction is 45 degrees is shown as a specific example of the inclination direction, the inclination direction is not limited to the 45 degrees, and some deviation (for example, 44 degrees or 46 degrees) is allowed in the characteristics of the strain sensor 1.
In addition, the above description shows the case where a full bridge circuit including four resistance meters 13(R1 to R4) is used as a wheatstone bridge circuit. However, the present invention is not limited to this, and as shown in fig. 8A and 8B, a half bridge circuit including two resistance meters 13(R1 and R2) may be used as the wheatstone bridge circuit. In addition, R in fig. 8B is a fixed resistance.
As shown in fig. 9A to 9C, a communication groove 113 that communicates the groove 111 with the side surface of the silicon layer 11 may be formed on the back surface of the silicon layer 11. Here, in the bonding of the silicon layer 11 and the insulating layer 12, a temperature of about 400 degrees is applied by anodic bonding. Therefore, if the groove 113 is not connected, air in the groove 111 between the silicon layer 11 and the insulating layer 12 is sealed in a high temperature state at the time of anodic bonding, and if the temperature is lowered to normal temperature, the air is contracted, and therefore the thin portion 112 may be deformed, and the zero point of the strain sensor 1 may be displaced. On the other hand, by providing the communicating groove portion 113, air existing in the groove portion 111 can be released to the outside at the time of anodic bonding, and deformation of the thin portion 112 can be avoided.
In addition, the silicon layer 11 needs to be configured so that only a part of the silicon layer is thinned by the groove portion 111 and the communicating groove portion 113 without thinning the entire silicon layer.
In addition, the following is shown above: one thin portion 112 is formed by forming one groove portion 111 in the silicon layer 11. However, the present invention is not limited to this, and the resistance meter 13 may be disposed in the thin portion 112, and as shown in fig. 10, a plurality of thin portions 112 may be configured by forming a plurality of grooves 111 in the silicon layer 11. In the example shown in fig. 10, four groove portions 111 are formed in the silicon layer 11.
Finally, parameters that affect the sensitivity of the strain sensor 1(MEMS chip) are described together with experimental data.
Parameters that affect the sensitivity of the strain sensor 1 according to embodiment 1 of the present invention include the size (chip size) of the strain sensor 1, the thickness of the insulating layer 12, the thickness and hardness of the bonding layer between the silicon layer 11 and the insulating layer 12, and the size and thickness of the thin portion 112.
First, differences in sensitivity due to the size of the strain sensor 1 will be described with reference to fig. 11A to 11C and table 1. Fig. 11A shows a case where the size of the strain sensor 1 is (a × 3a), fig. 11B shows a case where the size of the strain sensor 1 is (1.5a × 1.5a), and fig. 11C shows a case where the size of the strain sensor 1 is (3a × 3 a). a is a constant. Table 1 shows the difference in sensitivity due to the size of the strain sensor 1. Table 1 shows the sensitivity ratio when the sensitivity of a general metal strain gauge is 1.
[ Table 1]
As shown in table 1, the larger the size of the strain sensor 1, the higher the sensitivity. In addition, the sensitivity of the square shape is higher than that of the rectangular shape in the case of the strain sensor 1 having the same area. That is, the strain sensor 1 shown in fig. 11B has a smaller area than the strain sensor 1 shown in fig. 11A, but the sensitivity is improved as shown in table 1.
In general, a gauge factor is about 2 to 3 in a metal strain gauge, while a gauge factor is about several tens to 100 in the strain sensor 1. Therefore, the strain sensor 1 can achieve a sensitivity 100 times or more higher than that of a metal strain gauge. Further, since the strain sensor 1 has high sensitivity, it can be significantly downsized with respect to the metal strain gauge, and thus the degree of freedom on the fixed side (the rotational shaft body 5 side) is increased.
As described above, the size and the sensitivity of the strain sensor 1 are in a trade-off relationship, but the strain sensor 1 can be made highly sensitive by forming the thin portion 112 or controlling other thickness according to the degree of miniaturization.
Next, with reference to fig. 12, the difference in sensitivity due to the thickness of the insulating layer 12 and the thickness and hardness of the bonding layer will be described. Fig. 12 shows a sensitivity ratio when Pyrex glass (Pyrex glass) is used as the insulating layer 12, and the sensitivity when the thickness of the bonding layer is T and the thickness ratio (ratio to the reference thickness) of the insulating layer 12 is 2 is set to 1. Fig. 12 shows a case where the thickness of the bonding layer is T, a case where the thickness ratio of the insulating layer 12 is 1 and the solder bonding is performed, and a case where the thickness ratio of the insulating layer 12 is 1 and the thickness of the bonding layer is 4T.
If the insulating layer 12 is thick, strain is absorbed and the efficiency of transferring strain is reduced. Therefore, as shown in fig. 12, in the strain sensor 1, the thinner the thickness of the insulating layer 12, the higher the sensitivity. On the other hand, a minimum thickness required as a withstand voltage of the insulating layer 12 needs to be taken into consideration. Further, when an adhesive is used as the bonding layer, the sensitivity varies depending on the thickness and hardness. That is, the strain sensor 1 has higher sensitivity when an adhesive having a high Young's modulus such as an epoxy system is used as the adhesive, or when the bonding layer is thinner. In the strain sensor 1, the sensitivity is higher in the case of using solder bonding than in the case of using an adhesive.
Next, the difference in sensitivity due to the size and thickness of the thin portion 112 will be described with reference to fig. 13A, 13B, and table 2. Fig. 13A and 13B show, as an example, a case where the size of the strain sensor 1 is (3A × 3A) and the size of the thin portion 112 is (0.5a × 0.5 a). As shown in fig. 13B, the entire thickness of the silicon layer 11 is t1, and the thickness of the thin portion 112 is t 2. In table 2, similarly to table 1, the sensitivity ratio is shown when the sensitivity of a general metal strain gauge is 1.
[ Table 2]
As shown in table 2, by forming the thin portion 112 in the strain sensor 1, sensitivity can be increased by about 1.4 times as high as that in the case where the thin portion 112 is not provided. Even if the size of the strain sensor 1 is changed, the size of the thin portion 112 having the highest sensitivity is substantially the same (in the example in table 2, the sensitivity is highest when the size of the thin portion 112 is (0.5a × 0.5a) regardless of the size of the strain sensor 1). Further, by setting the thickness t2 of the thin portion 112 to be half or less of the thickness t1 of the silicon layer 11, the effect is further enhanced.
As described above, according to the embodiment 1, the present invention includes: a silicon layer 11; a resistance meter 13 formed on the silicon layer 11; a groove 111 formed on one surface of the silicon layer 11, and having a thin portion 112 at a portion of the silicon layer 11 where the resistance meter 13 is formed; and an insulating layer 12 bonded to one surface of the silicon layer 11, thereby improving the torque detection accuracy.
In addition, although the case where the silicon layer 11 is used as the substrate layer has been described above, the present invention is not limited thereto, and any member may be used as long as it generates strain according to an external force. For example, as the substrate layer, an insulator (glass or the like) or a metal can be used. Here, when the substrate layer is an insulator, the resistance meter 13 is formed by forming a film on the insulator by sputtering or the like. When the substrate layer is made of a metal, the resistance meter 13 is formed by forming a film on the metal through an insulating film by sputtering or the like. The resistance meter 13 may be formed by forming a film on the silicon layer 11 by sputtering or the like using the silicon layer 11 as a substrate layer.
In the case of using the insulator or the metal as a substrate layer, the gauge factor is also higher than that of a general metal strain gauge. Further, when the resistance meter 13 is formed by film formation, the gauge factor does not change due to crystal orientation, that is, it is not necessary to define the direction, as compared with the case where the resistance meter 13 is formed on the silicon layer 11 by ion implantation.
On the other hand, when the resistance meter 13 is formed on the silicon layer 11 by ion implantation, the gauge factor is higher by 4 to 10 times or more than that in the case where the resistance meter 13 is formed by film formation.
In the present invention, any constituent elements of the embodiments may be modified or omitted within the scope of the invention.
Industrial applicability
The torque detector and the method for manufacturing the torque detector according to the present invention are suitable for a torque detector that detects torque applied to a rotating shaft body and a method for manufacturing the torque detector.
Claims (5)
1. A torque detector, comprising:
a silicon layer which generates strain according to an external force;
a resistance meter formed on the silicon layer;
a groove portion formed on one surface of the silicon layer, the groove portion being a thin portion at a portion of the silicon layer where the resistance meter is formed;
a communicating groove portion formed on one surface of the silicon layer and communicating the groove portion with a side surface of the silicon layer; and
and an insulating layer bonded to one surface of the silicon layer.
2. The torque detector of claim 1,
the resistance meter is formed by forming a film on the silicon layer.
3. The torque detector of claim 1,
the resistance meter is formed in an oblique direction with respect to the side direction of the silicon layer.
4. The torque detector of claim 1,
the resistance meter is formed along an edge direction of the silicon layer.
5. A method of manufacturing a torque sensor, comprising the steps of:
forming a resistance meter on the silicon layer which generates strain according to the external force;
forming a groove portion in one surface of the silicon layer, the groove portion having a thin portion at a portion of the silicon layer where the resistance meter is formed;
forming a communicating groove portion on one surface of the silicon layer, the communicating groove portion communicating the groove portion with a side surface of the silicon layer; and
one side of the silicon layer is bonded to an insulating layer.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-156383 | 2017-08-14 | ||
| JP2017156383A JP6820102B2 (en) | 2017-08-14 | 2017-08-14 | Torque detector and manufacturing method of torque detector |
| PCT/JP2018/025896 WO2019035291A1 (en) | 2017-08-14 | 2018-07-09 | Torque detector, and method for producing torque detector |
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| CN110998265A CN110998265A (en) | 2020-04-10 |
| CN110998265B true CN110998265B (en) | 2021-12-21 |
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| JP (1) | JP6820102B2 (en) |
| KR (1) | KR102332882B1 (en) |
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| WO (1) | WO2019035291A1 (en) |
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| KR102332882B1 (en) | 2021-12-01 |
| JP6820102B2 (en) | 2021-01-27 |
| JP2019035638A (en) | 2019-03-07 |
| KR20200022034A (en) | 2020-03-02 |
| WO2019035291A1 (en) | 2019-02-21 |
| CN110998265A (en) | 2020-04-10 |
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