CN110962427A - Quantum dot film - Google Patents
Quantum dot film Download PDFInfo
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- CN110962427A CN110962427A CN201911162144.6A CN201911162144A CN110962427A CN 110962427 A CN110962427 A CN 110962427A CN 201911162144 A CN201911162144 A CN 201911162144A CN 110962427 A CN110962427 A CN 110962427A
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- China
- Prior art keywords
- quantum dot
- indium phosphide
- ligand
- layer
- organic
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002096 quantum dot Substances 0.000 title claims abstract description 67
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical class [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 claims abstract description 51
- 230000004888 barrier function Effects 0.000 claims abstract description 25
- 150000003839 salts Chemical class 0.000 claims abstract description 7
- WLZRMCYVCSSEQC-UHFFFAOYSA-N cadmium(2+) Chemical compound [Cd+2] WLZRMCYVCSSEQC-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000002270 dispersing agent Substances 0.000 claims abstract description 6
- 239000011347 resin Substances 0.000 claims abstract description 6
- 229920005989 resin Polymers 0.000 claims abstract description 6
- 150000007942 carboxylates Chemical class 0.000 claims abstract description 5
- 239000002105 nanoparticle Substances 0.000 claims description 26
- 239000003446 ligand Substances 0.000 claims description 25
- 239000013110 organic ligand Substances 0.000 claims description 15
- 230000000903 blocking effect Effects 0.000 claims description 13
- 239000006185 dispersion Substances 0.000 claims description 9
- 150000001412 amines Chemical class 0.000 claims description 5
- 150000007524 organic acids Chemical class 0.000 claims description 5
- 239000002245 particle Substances 0.000 claims description 5
- RSPCKAHMRANGJZ-UHFFFAOYSA-N thiohydroxylamine Chemical compound SN RSPCKAHMRANGJZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000002131 composite material Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 229910017053 inorganic salt Inorganic materials 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 239000000654 additive Substances 0.000 description 3
- 230000000996 additive effect Effects 0.000 description 3
- 239000011258 core-shell material Substances 0.000 description 3
- 238000006862 quantum yield reaction Methods 0.000 description 3
- LLLUJBOVABFBBG-UHFFFAOYSA-N [Ca].[Cd] Chemical compound [Ca].[Cd] LLLUJBOVABFBBG-UHFFFAOYSA-N 0.000 description 2
- 150000001661 cadmium Chemical class 0.000 description 2
- 229910001385 heavy metal Inorganic materials 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 125000003396 thiol group Chemical class [H]S* 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B33/00—Layered products characterised by particular properties or particular surface features, e.g. particular surface coatings; Layered products designed for particular purposes not covered by another single class
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
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- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a quantum dot film. The quantum dot film includes a first barrier layer, a quantum dot layer disposed on the first barrier layer, and a second barrier layer disposed on the quantum dot layer. The quantum dot layer comprises indium phosphide quantum dots, inorganic salts or carboxylates, resin and auxiliary dispersing agents. The indium phosphide quantum dot is of a single core structure, and the external quantum efficiency and the capacity of the indium phosphide can be improved by mixing the indium phosphide quantum dot with cadmium ions.
Description
Technical Field
The invention relates to the technical field of display, in particular to a quantum dot film.
Background
The quantum dot is a fluorescent nano material, can emit fluorescence with higher color purity after being excited by short-wavelength light, and can improve the color gamut and the visual angle of the liquid crystal display when being applied to display brief description. The common quantum dot materials at present have three types: cadmium-containing quantum dots, non-cadmium quantum dots, perovskite quantum dots and the like. The calcium cadmium-containing quantum dot has high fluorescence efficiency and color purity and good stability, but the calcium cadmium-containing quantum dot contains heavy metal elements and is complex in preparation process. The non-cadmium quantum dots do not contain heavy metal elements, but the fluorescence quantum yield and the color purity are lower, and the surface is coated with a wide band gap semiconductor core shell to achieve higher fluorescence quantum yield. The titanium ore quantum dots have extremely high fluorescence quantum yield and color purity, but have extremely poor reliability. Therefore, there is a need for an improved quantum dot material to solve the problems encountered in the conventional art.
Disclosure of Invention
The invention provides a quantum dot film, which aims to solve the problems of low color purity and low external quantum efficiency of the current display.
Embodiments of the present invention provide a quantum dot film including a first blocking layer, a quantum dot layer disposed on the first blocking layer, and a second blocking layer disposed on the quantum dot layer. The quantum dot layer comprises indium phosphide quantum dots, inorganic salts, resin and dispersion aid.
In an embodiment of the invention, the first barrier layer and the second barrier layer include a water-oxygen barrier film, an organic barrier film or a multi-layer composite barrier film, and the dispersion aid includes a polar dispersion aid or a non-polar dispersion aid.
In an embodiment of the present invention, the indium phosphide quantum dots are composed of indium phosphide nanoparticles having a particle size of 1 nm to 10 nm, and the indium phosphide nanoparticles include indium phosphide nanoparticles capable of emitting red light and indium phosphide nanoparticles capable of emitting green light.
In one embodiment of the present invention, the indium phosphide nanoparticles include organic ligands, and the organic ligands coat the surface of the indium phosphide nanoparticles.
In one embodiment of the present invention, the organic ligand comprises an organic acid ligand, an organic amine ligand, an organophosphorus ligand, a mercaptoacid ligand, or a mercaptoamine ligand.
In one embodiment of the present invention, the inorganic salt includes cadmium ions.
In one embodiment of the present invention, the InP quantum dots are single core structures.
Another embodiment of the present invention provides a quantum dot film, which includes a first blocking layer, a quantum dot layer disposed on the first blocking layer, and a second blocking layer disposed on the quantum dot layer. The quantum dot layer comprises indium phosphide quantum dots, carboxylates, resin and a dispersion aid, the indium phosphide quantum dots are composed of indium phosphide nano-particles with the particle size of 1-10 nanometers, the indium phosphide nano-particles comprise organic ligands, and the surfaces of the indium phosphide nano-particles are coated by the organic ligands.
In one embodiment of the present invention, the organic ligand comprises an organic acid ligand, an organic amine ligand, an organophosphorus ligand, a mercaptoacid ligand, or a mercaptoamine ligand.
The invention also provides a display which comprises the quantum dot film.
In the embodiment of the invention, the indium phosphide quantum dot is of a single-core structure, an additional cladding core shell is not needed for the indium phosphide quantum dot, and the external quantum efficiency and the capacity of the indium phosphide can be improved by mixing the indium phosphide quantum dot with cadmium ions.
Drawings
FIG. 1 is a schematic illustration of a quantum dot film of an embodiment of the invention; and
fig. 2 is a schematic diagram of a patterned quantum dot film of an embodiment of the invention.
Detailed Description
Referring to fig. 1, an embodiment of the present invention provides a quantum dot film 10 including a first barrier layer 11, a quantum dot layer 12 disposed on the first barrier layer 11, and a second barrier layer 13 disposed on the quantum dot layer 12. Specifically, the first barrier layer 11 and the second barrier layer 13 include a water oxygen barrier film, an organic barrier film, or a multi-layer composite barrier film. The quantum dot layer 12 is formed between the first barrier layer 11 and the second barrier layer 13 by means of coating. Furthermore, the quantum dot layer 12 includes indium phosphide quantum dots, inorganic salts, resin and a co-dispersant, and the indium phosphide quantum dots are composed of indium phosphide nanoparticles having a particle size of 1 nm to 10 nm, and the indium phosphide nanoparticles include indium phosphide nanoparticles capable of emitting red light and indium phosphide nanoparticles capable of emitting green light. The dispersion aid additive comprises a polar dispersion aid additive or a non-polar dispersion aid additive. In another embodiment, carboxylates can be substituted for the inorganic salts in quantum dot layer 12, and carboxylates and inorganic salts include cadmium ions.
It is worth noting that the indium phosphide quantum dot is of a single-core structure, the indium phosphide quantum dot does not need to be additionally coated with a core shell, and the indium phosphide quantum dot mixed with inorganic salts containing cadmium ions can improve the external quantum efficiency and the capacity of the indium phosphide. In detail, the indium phosphide quantum dot is composed of indium phosphide nanoparticles and organic ligands, the organic ligands coat the surface of the indium phosphide nanoparticles, and the organic ligands include organic acid ligands, organic amine ligands, organic phosphorus ligands, mercapto acid ligands or mercapto amine ligands.
According to fig. 2, the patterned quantum dot film 20 includes a first blocking layer 21, a patterned quantum dot layer 22 disposed on the first blocking layer 21, and a second blocking layer 23 disposed on the patterned quantum dot layer 22. The difference between the patterned quantum dot film 20 of fig. 2 and the quantum dot film 10 of fig. 1 is that the indium phosphide nanoparticles 24 capable of emitting red light and the indium phosphide nanoparticles 25 capable of emitting green light in the patterned quantum dot film 20 are separated by the spacer 26, and the rest features are the same as those in fig. 1, and thus are not repeated.
In addition, the quantum dot film or the patterned quantum dot film can be used in the display to improve the color purity of the display and reduce the production cost.
While the invention has been described in conjunction with specific embodiments thereof, it is to be understood that many alternatives, modifications, and variations will be apparent to those skilled in the art. Accordingly, it is intended to embrace all such alternatives, modifications, and variations that fall within the scope of the included claims.
Claims (10)
1. A quantum dot film, comprising:
a first barrier layer;
a quantum dot layer disposed on the first blocking layer; and
a second blocking layer disposed on the quantum dot layer;
the quantum dot layer comprises indium phosphide quantum dots, inorganic salts, resin and a dispersion aid.
2. The quantum dot film of claim 1, wherein the first barrier layer and the second barrier layer comprise a water oxygen barrier film, an organic barrier film, or a multi-layer composite barrier film, and the co-dispersant comprises a polar co-dispersant or a non-polar co-dispersant.
3. The quantum dot film of claim 1, wherein the indium phosphide quantum dots are composed of indium phosphide nanoparticles having a particle size of 1 nm to 10 nm, and the indium phosphide nanoparticles include indium phosphide nanoparticles emitting red light and indium phosphide nanoparticles emitting green light.
4. The quantum dot film of claim 3, wherein the indium phosphide nanoparticles comprise an organic ligand, and the organic ligand coats the surface of the indium phosphide nanoparticles.
5. The quantum dot film of claim 4, wherein the organic ligand comprises an organic acid ligand, an organic amine ligand, an organophosphorus ligand, a mercaptoacid ligand, or a mercaptoamine ligand.
6. The quantum dot film of claim 1, wherein the inorganic salt comprises cadmium ions.
7. The quantum dot film of claim 1, wherein the indium phosphide quantum dots are of a single-core structure.
8. A quantum dot film, comprising:
a first barrier layer;
a quantum dot layer disposed on the first blocking layer; and
a second blocking layer disposed on the quantum dot layer;
the quantum dot layer comprises indium phosphide quantum dots, carboxylates, resin and a co-dispersant, the indium phosphide quantum dots are composed of indium phosphide nano-particles with the particle size of 1-10 nanometers, the indium phosphide nano-particles comprise organic ligands, and the surfaces of the indium phosphide nano-particles are coated by the organic ligands.
9. The quantum dot film of claim 8, wherein the organic ligand comprises an organic acid ligand, an organic amine ligand, an organophosphorus ligand, a mercaptoacid ligand, or a mercaptoamine ligand.
10. A display, comprising: the quantum dot film of claim 1 or 8.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911162144.6A CN110962427A (en) | 2019-11-25 | 2019-11-25 | Quantum dot film |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911162144.6A CN110962427A (en) | 2019-11-25 | 2019-11-25 | Quantum dot film |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110962427A true CN110962427A (en) | 2020-04-07 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911162144.6A Pending CN110962427A (en) | 2019-11-25 | 2019-11-25 | Quantum dot film |
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