CN110907681A - Differential resonant voltage sensor compounded by quartz tuning fork and piezoelectric bimorph - Google Patents
Differential resonant voltage sensor compounded by quartz tuning fork and piezoelectric bimorph Download PDFInfo
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Abstract
本发明提出了一种石英音叉与压电双晶复合的差分谐振式电压传感器，包括2个音叉谐振器、压电双晶片、底座和门振荡电路，所述2个音叉谐振器沿压电双晶片长度方向对称设置在压电双晶片的上下表面，所述压电双晶片固定在底座上，所述音叉谐振器为双端固定音叉，包含两个音叉振梁，每个音叉振梁的四个面上交替设置正负电极，且在音叉振梁长度的0.224倍和0.776倍的位置处使该面设置的电极反向，所述2个音叉谐振器的正负电极与门振荡电路连接。本发明的输出为数字频率信号，不需要复杂的检测电路，不需要进行A/D转换。
The invention proposes a differential resonance voltage sensor which is compounded by a quartz tuning fork and a piezoelectric bimorph, including two tuning fork resonators, a piezoelectric bimorph, a base and a gate oscillation circuit. The length direction of the wafer is symmetrically arranged on the upper and lower surfaces of the piezoelectric bimorph, the piezoelectric bimorph is fixed on the base, and the tuning fork resonator is a double-ended fixed tuning fork, including two tuning fork vibration beams, four of each tuning fork vibration beam. Positive and negative electrodes are alternately arranged on each surface, and the electrodes arranged on this surface are reversed at positions 0.224 times and 0.776 times the length of the tuning fork vibrating beam, and the positive and negative electrodes of the two tuning fork resonators are connected to the gate oscillation circuit. The output of the present invention is a digital frequency signal, which does not require complex detection circuits and A/D conversion.
Description
Technical Field
The invention belongs to the technical field of voltage sensors, and particularly relates to a differential resonant voltage sensor compounded by a quartz tuning fork and a piezoelectric bimorph.
Background
The current commonly used voltage measuring devices include a resistive voltage divider, a capacitive voltage divider, an electromagnetic voltage transformer, a hall voltage sensor, and the like. The resistance voltage divider can be used for measuring alternating current and direct current voltages, but due to joule heating effect, the inaccuracy of voltage measurement is caused, and extra power consumption is generated; capacitive voltage dividers and electromagnetic voltage transformers are commonly used for measuring alternating voltage, but are easily damaged when subjected to overvoltage, so that the normal operation of equipment and a system is endangered; the Hall voltage sensor applies the magnetic balance principle of Hall effect, converts the primary side high voltage into the secondary side low voltage in proportion, and is widely applied to the isolation measurement of voltage, but the primary side of the Hall voltage sensor needs to be matched with an internal or external resistor, the required resistance and power of the Hall voltage sensor are correspondingly increased along with the increase of the measured voltage range, and even radiating fins are needed, so that the application range of the Hall voltage sensor is limited.
At present, some new voltage sensors have been developed. For example, an optical voltage sensor based on principles such as the Pockels effect and the Kerr effect of an electro-optic crystal has attracted much attention due to the advantages of small size, strong anti-electromagnetic interference capability and the like; the optical voltage sensor compounded by the piezoelectric material and the optical fiber is used for converting the crystal deformation caused by the inverse piezoelectric effect into the modulation of an optical signal, and the measurement of the applied voltage is realized by detecting the modulated optical signal. However, the optical voltage sensors all need a working light source, and the intensity and spectral stability of the light source also affect the performance of the sensor. In addition, there are also frequency output Voltage sensors, such as Yuuki Wada et al in Japan, which measure Voltage by using the principle that a resonant gyro Sensor utilizes electrostatic force to regulate resonant frequency and the resonant frequency is shifted by the transverse displacement of a MEMS silicon Resonator caused by the electrostatic force under the action of applied Voltage, and the resonant frequency can be changed to 2.5kHz within the range of 0-420V (refer to Wada Y, Nobunaga N, Kumagai S, et al. However, the output frequency of such a sensor has a non-linear relationship with the measured voltage, and is easily limited in practical application.
Disclosure of Invention
The invention aims to provide a differential resonant voltage sensor compounded by a quartz tuning fork and a piezoelectric bimorph.
The technical scheme for realizing the purpose of the invention is as follows: the utility model provides a quartz tuning fork and compound difference resonant mode voltage sensor of piezoelectricity bimorph, includes 2 tuning fork syntonizers, piezoelectricity bimorph, base and gate oscillation circuit, 2 tuning fork syntonizers set up the upper and lower surface at piezoelectricity bimorph along piezoelectricity bimorph length direction symmetry, piezoelectricity bimorph is fixed on the base, the tuning fork syntonizer is the fixed tuning fork of both ends, contains two tuning fork beams that shake, sets up positive and negative electrode on four faces of every tuning fork beam that shakes in turn, and shakes 0.224 times of beam length and 0.776 position department and makes the electrode that this face set up reverse at the tuning fork, 2 tuning fork syntonizers' positive and negative electrode AND gate oscillation circuit connection.
Preferably, the tuning fork resonator comprises a quartz tuning fork, two ends of the quartz tuning fork are respectively provided with a supporting end, and a tuning fork bonding pad is arranged on each supporting end.
Preferably, the positive and negative electrodes of the 2 tuning fork resonators are connected with the gate oscillation circuit through tuning fork pads.
Preferably, the piezoelectric bimorph includes two strip-shaped piezoelectric patches and a support sheet, the support sheet is disposed between the two strip-shaped piezoelectric patches, and the surfaces of the two strip-shaped piezoelectric patches are both plated with metal electrodes.
Preferably, the two strip-shaped piezoelectric sheets are polarized along the thickness direction, and when the two strip-shaped piezoelectric sheets are adhered to the supporting sheet, the polarization directions of the two strip-shaped piezoelectric sheets are opposite.
Preferably, the tuning fork resonator is made of aluminum nitride, silicon or quartz materials to design a tuning fork structure and a tuning fork excitation bonding pad.
Preferably, the tuning fork resonator is separated from the piezoelectric bimorph using a spacer.
Compared with the prior art, the invention has the remarkable advantages that:
(1) the output of the invention is a digital frequency signal, a complex detection circuit is not needed, and A/D conversion is not needed;
(2) the piezoelectric bimorph is used as a primary sensitive unit, and the piezoelectric material has very high resistivity, so that the input impedance of the voltage sensor is very high, and the voltage to be measured is hardly influenced;
(3) the invention carries out differential processing on the resonant frequency values of the two resonators, can multiply the sensitivity of the sensor and effectively reduce the influence of temperature drift on the measurement precision of the sensor;
(4) the resonance frequency of the tuning fork resonator is dozens of kilohertz and even hundreds of kilohertz, which is far higher than the environmental noise, and the wide bandwidth and the quick response can be still maintained even if a filter is adopted for noise reduction, so the method for realizing the voltage measurement through the frequency measurement has the advantages of insensitivity to the noise in nature, strong anti-interference capability and suitability for use in severe electromagnetic environments.
Drawings
Fig. 1 is a schematic structural diagram of the embodiment.
Fig. 2 is a schematic structural diagram of a sensor sensitive element in the invention.
FIG. 3 is a schematic diagram of a tuning fork resonator structure according to the present invention.
Fig. 4 is a schematic diagram of a piezoelectric bimorph structure according to the present invention.
FIG. 5 is a schematic diagram of the connection between the tuning fork resonator and the gate oscillator circuit according to the present invention.
FIG. 6 is a graphical representation of a sensitivity curve of a sample of the sensor principles of the present invention.
Fig. 7 is a schematic illustration of the resolution of a sample of the sensor principles of the present invention.
The tuning fork resonator comprises a tuning fork resonator unit 1, a tuning fork 11, a tuning fork pad 12, a tuning fork pad 13 and a fixed end 14; piezoelectric bimorph 2, piezoelectric sheet 21, backing sheet 22, gasket 3, unable adjustment base 4, gate oscillation circuit 5.
Detailed Description
A differential resonance type voltage sensor compounded by a quartz tuning fork and a piezoelectric bimorph comprises 2 tuning fork resonators 1, a piezoelectric bimorph 2, a fixed base 4 and a gate oscillation circuit 5. The two tuning fork resonators 1 are respectively arranged on the upper surface and the lower surface of the piezoelectric bimorph 2 in a centered and symmetrical manner along the length direction; the piezoelectric bimorph 2 is fixed on the fixed base 4 through two supporting ends of the supporting sheet; the voltage to be measured is directly applied to the upper and lower surfaces of the piezoelectric bimorph 2. The positive and negative electrodes of the two tuning fork resonators 1 are connected with the gate oscillation circuit 5.
In order to reduce the energy loss in the resonance process, the quartz tuning fork 11 is a double-end fixed tuning fork and comprises two tuning fork vibration beams, each tuning fork vibration beam is provided with four surfaces, each surface of each tuning fork vibration beam is coated with an electrode, two of the surfaces are positive electrodes, and the other two surfaces are negative electrodes. The positive and negative electrodes of the four surfaces are alternately designed in a positive-negative-positive-negative mode; in order to make the two vibrating beams of the tuning fork work in the anti-phase bending vibration mode, the coated electrodes are required to be reversed at the positions where the stress of the vibrating beams of the tuning fork is zero, namely 0.224 times and 0.776 times of the length of the vibrating beams of the tuning fork, namely, the alternating interval mode of 'positive-negative-positive' is changed into the alternating interval mode of 'negative-positive-negative-positive' or the alternating interval mode of 'negative-positive-negative-positive' is changed into the alternating interval mode of 'positive-negative-positive-negative'. When the positive electrode and the negative electrode are connected into the oscillating circuit, the length positions of 0.224 time and 0.776 time of the tuning fork vibration beam are taken as boundary points, and the electric polarization direction in the vibration beam is reversed, so that the stress distribution direction generated in the vibration beam due to the inverse piezoelectric effect is also reversed, and the bending vibration modes with opposite vibration directions and symmetrical vibration shapes of the two vibration beams are induced. When two vibrating beams of the tuning fork work in a bending vibration mode, the vibration directions of the vibrating beams are opposite, the phase difference is 180 degrees, the bending moment and the shearing stress on the beams are opposite, the stress and the bending moment of the end part combination part of the two vibrating beams are completely offset, the energy dissipation coupled to the two fixed ends is very little, the influence of double-end bonding and fixing of the resonator during device preparation is greatly reduced, and the Q value of the sensor is effectively improved.
In a further embodiment, the tuning fork resonator 1 is a quartz tuning fork 11, two ends of the quartz tuning fork 11 are respectively provided with a supporting end portion 14, and a tuning fork pad 12 and a tuning fork pad 13 are respectively arranged on the two supporting end portions 14; the positive and negative electrodes on the two tuning fork resonators 1 are connected to the gate oscillation circuit 5 through tuning fork pads.
In a further embodiment, in order to facilitate exciting the vibration beam of the quartz tuning fork 11 to vibrate and detecting the electric signals in the surface electrode of the vibration beam, positive electrodes on two vibration beams of the quartz tuning fork 11 are all led out to the tuning fork bonding pad 12, and negative electrodes are all led out to the bonding pad 13. .
In a further embodiment, the piezoelectric bimorph 2 includes two elongated piezoelectric patches 21 and a supporting sheet 22, the supporting sheet 22 is disposed between the two elongated piezoelectric patches 21, and the two elongated piezoelectric patches 21 are both plated with metal electrodes.
In a further embodiment, in order to enable the piezoelectric bimorph 2 to generate bending deformation when a voltage to be measured is applied to the upper and lower surfaces of the piezoelectric bimorph 2, the two strip-shaped piezoelectric sheets 21 constituting the piezoelectric bimorph 2 are both polarized in the thickness direction, and when the piezoelectric bimorph is bonded to the supporting sheet 22, the polarization directions of the two piezoelectric sheets 21 are opposite.
In a further embodiment, the tuning fork resonator 1 is made of aluminum nitride, silicon or quartz to design the tuning fork structure and the tuning fork excitation pad.
Preferably, for higher sensitivity and higher voltage tolerance, the material of the piezoelectric bimorph can be PZT, PMN-PT, etc. with high impedance and high piezoelectric constant d31The material of (1).
In a further embodiment, tuning fork resonator 1 is separated from piezoelectric bimorph 2 using spacer 3.
After the two tuning fork resonators 1 are centrally symmetrically adhered to the piezoelectric bimorph 2 along the length direction, the piezoelectric bimorph 2 is fixed on the fixed base 4 through the supporting end parts of the supporting pieces 22, when a voltage is applied to the piezoelectric bimorph 2, stress/strain generated by the piezoelectric bimorph 2 due to the inverse piezoelectric effect is transferred to the longitudinal direction of the two tuning fork resonators 1, so that the two tuning fork resonators 1 are respectively stretched and compressed, and the resonance frequencies of the two tuning fork resonators 1 are changed. The tuning fork resonator 1 is connected with the gate oscillation circuit 5 through tuning fork bonding pads 12 and 13 and outputs a digital frequency signal; the frequency values of the two resonators can be directly read by using a counter or a frequency meter, and the voltage can be measured after differential processing.
The piezoelectric bimorph is subjected to bending deformation under the action of voltage to generate stress/strain which is transmitted to the longitudinal direction of the tuning fork resonators, so that the resonant frequencies of the two tuning fork resonators are respectively increased and decreased. The tuning fork resonator can directly output a digital frequency signal through the gate oscillation circuit. And directly reading the frequency values of the two resonators by using a counter or a frequency meter, and measuring the voltage after differential processing.
The invention is formed by compounding a piezoelectric bimorph and two tuning fork resonators. The resonator is excited by using a gate oscillation circuit, and only needs ultra-low power (3V,150 muW); the sensor has higher input impedance and has little influence on the measured voltage; the sensor outputs digital frequency signals, and the anti-interference capability is strong.
Examples
As shown in fig. 1, in the present embodiment, a differential resonant voltage sensor in which a quartz tuning fork and a piezoelectric bimorph are combined is combined by using a sandwich structure connection manner of "tuning fork resonator 1-piezoelectric bimorph 2-tuning fork resonator 1", that is, piezoelectric bimorph 2 is disposed between two tuning fork resonators 1.
In order to avoid the situation that the vibration beam of the tuning fork resonator 1 is contacted with the surface of the piezoelectric bimorph 2, so that the resonator cannot start vibrating or be damaged, and the like, the tuning fork resonator 1 is separated from the piezoelectric bimorph 2 by using a spacer 3. Preferably, in order to obtain better stress/strain transfer effect, the material of the spacer 3 is the same as that of the tuning fork resonator 1, and the size of the spacer 3 is the same as that of the fixed end portion 14.
In order to ensure that the longitudinal forces of the two tuning fork resonators 1 are uniform, the two tuning fork resonators 1 are distributed symmetrically with respect to the piezoelectric bimorph 2 about the central axis, as shown in fig. 2.
The tuning fork resonator 1 in this embodiment is an integrated structure designed by using a quartz material with a high Q value, and as shown in fig. 3, includes a quartz tuning fork 11, wherein each end of the quartz tuning fork 11 has a supporting end 14, and a tuning fork pad 12 and a tuning fork pad 13 are disposed on each of the two supporting ends 14.
When two vibrating beams of the tuning fork work in a bending vibration mode, the vibration directions of the vibrating beams are opposite, the phase difference is 180 degrees, the bending moment and the shearing stress on the beams are opposite, the stress and the bending moment of the end part combination part of the two vibrating beams are completely offset, the energy dissipation coupled to the two fixed ends is very little, the influence of double-end bonding and fixing of the resonator during device preparation is greatly reduced, and the Q value of the sensor is effectively improved. And the resonant frequency of the tuning fork is dozens of kilohertz and is far higher than the ambient noise, so that the broadband and quick response can be still maintained even if a filter is used for reducing noise.
In order to facilitate exciting the vibration of the quartz tuning fork vibration beam and detecting the electric signals in the surface electrode of the vibration beam, positive and negative electrodes are respectively led out to the bonding pad 12 and the bonding pad 13.
Advantageously, the quality of the surface electrode can be judged by detecting whether the tuning fork pad 12 and the tuning fork pad 13 on the same end of the supporting end 14 are conductive and the resistance value between the two tuning fork pads 12 (or tuning fork pads 13) opposite to each other.
As shown in fig. 4, the piezoelectric bimorph 2 is formed by bonding two strip-shaped piezoelectric sheets 21 and a support sheet 22 in an up-down lamination manner, and the upper and lower surfaces of the piezoelectric sheets 21 are respectively plated with metal electrodes.
It should be emphasized that, in order to enable the piezoelectric bimorph 2 to generate bending deformation when a voltage to be measured is applied to the upper and lower surfaces of the piezoelectric bimorph 2, when both the two elongated piezoelectric pieces 21 constituting the piezoelectric bimorph 2 are polarized in the thickness direction and bonded to the support piece 22, the polarization directions of the two piezoelectric pieces 21 are opposite, as shown in fig. 4.
Particularly advantageously, the material of the piezoelectric sheet 21 may be PZT, PMN-PT or the like having a high impedance, high piezoelectric constant d31The material of (a); the support plate 22 may be made of a metal material such as copper, aluminum, etc., and has two fixing ends to facilitate the fixing of the sensor to the base.
When an external measured voltage is applied to the upper and lower surfaces of the piezoelectric bimorph 2, the two piezoelectric sheets 21 constituting the piezoelectric bimorph 2 are respectively extended and shortened due to the inverse piezoelectric effect, resulting in a bending deformation of the piezoelectric bimorph 2. The stress/strain generated by the bending of the piezoelectric bimorph 2 is transferred to the two tuning fork resonators 1, causing the two quartz tuning forks 11 to be respectively stretched and compressed. The resonance frequencies of the two tuning fork resonators 1 change under the force-frequency effect.
Advantageously, tuning fork pads 12 and 13 of the two resonators are connected to gate oscillating circuit 5, respectively, as shown in fig. 5. View a in fig. 5 is a schematic representation of the connection of the tuning fork excitation pad of the resonator to the gate oscillator circuit at the lower surface of the piezoelectric bimorph.
A gate circuit as shown in a dotted line frame of fig. 5 may be used as the gate oscillation circuit 5. It uses a CMOS inverter as an active element. In principle, the gate oscillator circuit 5 consists of an amplifier and a feedback network. The feedback resistor is used to ensure that the inverter operates in its linear region and can operate as an amplifier. When the closed loop gain is equal to or greater than 1 and the total phase shift of the amplifier and the feedback network is 0 or an integer multiple of 2 pi (360 degrees), the oscillating circuit outputs a digital frequency signal, the frequency of which depends on the resonance frequency of the quartz tuning fork 11. Particularly advantageously, such a gate oscillator circuit requires only very low power consumption (3V,150 μ W) to excite the resonator into resonance.
Alternatively, the gate oscillation circuit may be a pierce oscillation circuit, a colpitts oscillation circuit, a clarpt oscillation circuit, or the like.
Furthermore, a counter or a frequency meter is used for reading the resonant frequencies of the two resonators, and voltage measurement can be realized after differential processing.
It should be noted that, the sensor and the gate oscillation circuit of the present embodiment are separately disposed, and in practical application, the sensor and the gate oscillation circuit can be processed into an integrated structure
Fig. 6 is a voltage response curve of a sample of the sensor principle of the present invention. In the experimental process, the applied voltage range is +/-700V, the resonant frequencies of the two resonators are changed by 498Hz and 551Hz respectively, and the corresponding voltage sensitivities are 0.356Hz/V and 0.394Hz/V respectively. After difference processing is carried out on the collected resonant frequency values of the two resonators, the change value of the differential frequency of the sensor is 1049Hz, and the voltage sensitivity is multiplied to be 0.75 Hz/V.
FIG. 7 is a resolution of a sample of the sensor principle of the present invention; the invention can distinguish the direct current voltage which changes in a step way by taking 0.1V as the voltage, and the resolution reaches 0.007 percent of the full range (± 700V) of the test.
Claims (7)
1. The utility model provides a quartz tuning fork and piezoelectricity bimorph compound difference resonant mode voltage sensor, its characterized in that includes 2 tuning fork syntonizers (1), piezoelectricity bimorph (2), base (4) and gate oscillation circuit (5), 2 tuning fork syntonizers set up the upper and lower surface at piezoelectricity bimorph (2) along piezoelectricity bimorph (2) length direction symmetry, piezoelectricity bimorph (2) are fixed on base (4), tuning fork syntonizer (1) is the fixed pitch fork of bi-polar, contains two tuning fork vibration beams, sets up positive and negative electrode on four faces of every tuning fork vibration beam in turn, and makes the electrode that this face set up reverse in the position department of 0.224 times of tuning fork vibration beam length and 0.776 times, the positive and negative electrode of 2 tuning fork syntonizers (1) is connected with gate oscillation circuit (5).
2. The quartz tuning fork and piezoelectric bimorph composite differential resonant voltage sensor according to claim 1, characterized in that the tuning fork resonator (1) comprises a quartz tuning fork (11), a supporting end (14) is provided at each end of the quartz tuning fork (11), and a tuning fork pad (12) is provided on the supporting end (14).
3. The quartz tuning fork and piezoelectric bimorph composite differential resonant voltage sensor according to claim 2, characterized in that the positive and negative electrodes of the 2 tuning fork resonators (1) are connected to the gate oscillation circuit (5) through tuning fork pads (12).
4. The quartz tuning fork and piezoelectric bimorph composite differential resonance type voltage sensor according to claim 1, wherein the piezoelectric bimorph (2) comprises two elongated piezoelectric plates (21) and a supporting sheet (22), the supporting sheet (22) is disposed between the two elongated piezoelectric plates (21), and the surfaces of the two elongated piezoelectric plates (21) are plated with metal electrodes.
5. The quartz tuning fork and piezoelectric bimorph composite differential resonance type voltage sensor according to claim 4, wherein the two elongated piezoelectric plates (21) are both polarized in the thickness direction, and when bonded to the supporting plate (22), the polarization directions of the two piezoelectric plates (21) are opposite.
6. The quartz tuning fork and piezoelectric bimorph composite differential resonant voltage sensor according to claim 1, wherein the tuning fork resonator (1) is made of aluminum nitride, silicon or quartz material to design the tuning fork structure and the tuning fork excitation pad.
7. The quartz tuning fork and piezoelectric bimorph composite differential resonant voltage sensor according to claim 1, characterized in that the tuning fork resonator (1) is separated from the piezoelectric bimorph (2) using a spacer (3).
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| CN113640569A (en) * | 2021-07-05 | 2021-11-12 | 南京理工大学 | Voltage detection device |
| CN117439571A (en) * | 2023-11-15 | 2024-01-23 | 成都泰美克晶体技术有限公司 | A tuning fork type quartz crystal oscillator and resonator |
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