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CN110768642A - Broadband negative group delay microwave circuit with flat group delay characteristic - Google Patents

Broadband negative group delay microwave circuit with flat group delay characteristic Download PDF

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CN110768642A
CN110768642A CN201911086682.1A CN201911086682A CN110768642A CN 110768642 A CN110768642 A CN 110768642A CN 201911086682 A CN201911086682 A CN 201911086682A CN 110768642 A CN110768642 A CN 110768642A
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transmission line
group delay
line
microstrip line
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CN110768642B (en
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王钟葆
孟雨薇
邵特
房少军
刘宏梅
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Dalian Maritime University
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/30Time-delay networks
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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    • Y02DCLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
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Abstract

The invention discloses a broadband negative group delay microwave circuit with flat group delay characteristic, comprising: the device comprises a parallel unit, a microstrip line, a matching resistor, an input port and an output port; the parallel unit comprises an absorption resistor, a first transmission line, a second transmission line, a third transmission line and a fourth transmission line; the microstrip lines comprise an input microstrip line and an output microstrip line which are positioned on two sides of the parallel unit; the input port is connected with the output port through a matching resistor to form an upper branch circuit; the input port is connected with the input microstrip line, connected with the parallel unit in parallel, connected with the output microstrip line, and finally connected with the output port to form a lower branch. The parallel unit is formed by connecting a structure that the absorption resistor is connected with the second transmission line in series through the first transmission line and then connected with the third transmission line and the fourth transmission line in parallel.

Description

一种具有平坦群时延特性的宽带负群时延微波电路A Broadband Negative Group Delay Microwave Circuit with Flat Group Delay Characteristics

技术领域technical field

本发明涉及一种微波电路,具体为一种具有平坦群时延特性的宽带负群时延微波电路。The invention relates to a microwave circuit, in particular to a broadband negative group delay microwave circuit with flat group delay characteristics.

背景技术Background technique

群速是信号包络的速度,如果信号所通过媒质的折射率以及其对频率的导数为负,那么群速和群时延就可能为负值。换句话说,负群时延现象可以在吸收线或存在信号衰减的媒质中产生。因此,为了实现负群时延特性,许多学者使用了RLC谐振电路并且应用到了很多领域。例如,具有负群时延特性的RLC谐振电路被用在放大器中,实现了时延线的缩短,效率的提高,波动时延的均衡等。除此之外,具有负群时延特性的RLC谐振电路还被应用与移相器、天线阵等领域以改善时延性能,增加带宽。The group velocity is the velocity of the envelope of the signal. If the refractive index of the medium through which the signal passes and its derivative with respect to frequency are negative, then the group velocity and group delay may be negative. In other words, negative group delay phenomena can occur in absorbing lines or in media where there is signal attenuation. Therefore, in order to achieve negative group delay characteristics, many scholars have used RLC resonant circuits and applied them to many fields. For example, RLC resonant circuits with negative group delay characteristics are used in amplifiers, which realize shortening of delay lines, improvement of efficiency, and equalization of fluctuating delays. In addition, RLC resonant circuits with negative group delay characteristics are also used in phase shifters, antenna arrays and other fields to improve delay performance and increase bandwidth.

但集总元件的频率依赖性限制了负群时延电路的应用,因而产生了许多基于分布参数并结合电阻的负群时延电路,但这种电路衰减较大。因此,基于放大器的有源负群时延电路应运而生,但由于其电路参数复杂,不利于设计。之后又产生了许多低损耗无源负群时延电路。但是这些电路群时延值并不平坦,无法满足实际应用的需求。为了得到平坦的负群时延特性,有学者提出将两个工作在不同频率的负群时延电路级联在一起,但这种方式所实现的带宽较窄,衰减很大。However, the frequency dependence of lumped elements limits the application of negative group delay circuits, resulting in many negative group delay circuits based on distributed parameters and combined with resistance, but such circuits have large attenuation. Therefore, the active negative group delay circuit based on amplifier came into being, but because of its complicated circuit parameters, it is not conducive to the design. Since then, many low-loss passive negative group delay circuits have been produced. However, the delay values of these circuit groups are not flat and cannot meet the needs of practical applications. In order to obtain a flat negative group delay characteristic, some scholars propose to cascade two negative group delay circuits working at different frequencies together, but the bandwidth achieved by this method is narrow and the attenuation is large.

发明内容SUMMARY OF THE INVENTION

根据现有技术存在的问题,本发明公开了一种具有平坦群时延特性的宽带负群时延微波电路,包括:并联单元、微带线、匹配电阻、输入端口和输出端口;其中,所述并联单元包括吸收电阻、第一传输线、第二传输线、第三传输线和第四传输线;所述微带线包括位于所述并联单元两侧的输入微带线和输出微带线;According to the problems existing in the prior art, the present invention discloses a broadband negative group delay microwave circuit with flat group delay characteristics, including: a parallel unit, a microstrip line, a matching resistor, an input port and an output port; The parallel unit includes an absorption resistor, a first transmission line, a second transmission line, a third transmission line and a fourth transmission line; the microstrip line includes an input microstrip line and an output microstrip line located on both sides of the parallel unit;

所述吸收电阻的阻值为r1、所述第一传输线的特性阻抗为Z1、所述第二传输线的特性阻抗为Z2、所述第三传输线的特性阻抗为Z3、所述第四传输线的特性阻抗为Z4、所述输入微带线和输出微带线的特性阻抗为Z5、所述匹配电阻的阻值为r2The resistance value of the absorption resistor is r 1 , the characteristic impedance of the first transmission line is Z 1 , the characteristic impedance of the second transmission line is Z 2 , the characteristic impedance of the third transmission line is Z 3 , and the characteristic impedance of the third transmission line is Z 3 . The characteristic impedance of the four transmission lines is Z 4 , the characteristic impedance of the input microstrip line and the output microstrip line is Z 5 , and the resistance value of the matching resistor is r 2 ;

所述输入端口通过匹配电阻与输出端口连接构成上支路;The input port is connected with the output port through a matching resistor to form an upper branch;

所述输入端口连接所述输入微带线与所述并联单元并联后与所述输出微带线连接,最后与所述输出端口连接构成下支路。The input port is connected to the input microstrip line in parallel with the parallel unit, then connected to the output microstrip line, and finally connected to the output port to form a lower branch.

进一步的,所述的一种具有平坦群时延特性的宽带负群时延微波电路,其特征在于:Further, the broadband negative group delay microwave circuit with flat group delay characteristic is characterized in that:

所述并联单元由所述吸收电阻经所述第一传输线与所述第二传输线串联,之后与所述第三传输线和所述第四传输线并联后的结构相连接构成。The parallel unit is composed of a structure in which the absorption resistor is connected in series with the second transmission line through the first transmission line, and then connected in parallel with the third transmission line and the fourth transmission line.

作为优选的方式:该电路的宽带平坦负群时延实现条件为,所述第一传输线、第二传输线、第三传输线、第四传输线、输入微带线和输出微带线的长度都为中心频率所对应波长的四分之一。As a preferred way: the realization condition of the broadband flat negative group delay of the circuit is that the lengths of the first transmission line, the second transmission line, the third transmission line, the fourth transmission line, the input microstrip line and the output microstrip line are all centered A quarter of the wavelength corresponding to the frequency.

作为优选的方式:通过改变所述第一传输线、第二传输线、第三传输线、第四传输线、输入微带线和输出微带线的特性阻抗,可以调节群时延的平坦度以及负群时延带宽。As a preferred way: by changing the characteristic impedance of the first transmission line, the second transmission line, the third transmission line, the fourth transmission line, the input microstrip line and the output microstrip line, the flatness of the group delay and the negative group time can be adjusted extension bandwidth.

进一步的,further,

电路的传输系数为:The transmission coefficient of the circuit is:

Figure BDA0002265621440000021
Figure BDA0002265621440000021

群时延为:The group delay is:

Figure BDA0002265621440000022
Figure BDA0002265621440000022

进一步的,内部参数如下:Further, the internal parameters are as follows:

X1=(a3-a1)Z0 (3)X 1 =(a 3 -a 1 )Z 0 (3)

X2=(a1+Z0)(a3+Z0)-a2a4 (4)X 2 =(a 1 +Z 0 )(a 3 +Z 0 )-a 2 a 4 (4)

X3=(a4-a2)Z0 (5)X 3 =(a 4 -a 2 )Z 0 (5)

X4=a2(a3+Z0)+a4(a1+Z0) (6)X 4 =a 2 (a 3 +Z 0 )+a 4 (a 1 +Z 0 ) (6)

X1′=(a3′-a1′)Z0 (7)X 1 ′=(a 3 ′-a 1 ′)Z 0 (7)

X2′=a3′(a1+Z0)+a1′(a3+Z0)-a2′a4-a2a4′ (8)X 2 '=a 3 '(a 1 +Z 0 )+a 1 '(a 3 +Z 0 )-a 2 'a 4 -a 2 a 4 ' (8)

X3′=(a4′-a2′)Z0 (9)X 3 ′=(a 4 ′-a 2 ′)Z 0 (9)

X4′=a2′(a3+Z0)+a4′(a1+Z0)-a1′a4-a2a3′ (10)X 4 ′=a 2 ′(a 3 +Z 0 )+a 4 ′(a 1 +Z 0 )-a 1 ′a 4 -a 2 a 3 ′ (10)

进一步的,内部参数如下:Further, the internal parameters are as follows:

Figure BDA0002265621440000031
Figure BDA0002265621440000031

Figure BDA0002265621440000032
Figure BDA0002265621440000032

Figure BDA0002265621440000034
Figure BDA0002265621440000034

Figure BDA0002265621440000035
Figure BDA0002265621440000035

Figure BDA0002265621440000041
Figure BDA0002265621440000041

Figure BDA0002265621440000042
Figure BDA0002265621440000042

Figure BDA0002265621440000043
Figure BDA0002265621440000043

Figure BDA0002265621440000044
Figure BDA0002265621440000044

Figure BDA0002265621440000045
Figure BDA0002265621440000045

Figure BDA0002265621440000046
Figure BDA0002265621440000046

进一步的,内部参数如下:Further, the internal parameters are as follows:

Figure BDA0002265621440000047
Figure BDA0002265621440000047

P′=P1′-P2′ (20)P'=P 1 '-P 2 ' (20)

进一步的,内部参数如下:Further, the internal parameters are as follows:

Figure BDA0002265621440000051
Figure BDA0002265621440000051

Figure BDA0002265621440000053
Figure BDA0002265621440000053

Figure BDA0002265621440000054
Figure BDA0002265621440000054

与现有技术相比,本发明的有益效果:Compared with the prior art, the beneficial effects of the present invention:

为了在实现宽带负群时延微波电路的同时,解决插入损耗过大、输入输出端口匹配性能差、负群时延带宽内群时延值波动较大、平坦群时延带宽不够宽等问题,本发明提供了一种具有平坦群时延特性的宽带负群时延微波电路,该新型宽带负群时延微波电路能够实现宽带平坦负群时延特性,而且具有插入损耗适中,群时延波动小以及输入输出端口良好匹配等特点。In order to solve the problems of excessive insertion loss, poor matching performance of input and output ports, large fluctuation of group delay value within negative group delay bandwidth, and insufficient flat group delay bandwidth while realizing broadband negative group delay microwave circuit, The invention provides a broadband negative group delay microwave circuit with flat group delay characteristics. The novel broadband negative group delay microwave circuit can realize broadband flat negative group delay characteristics, and has moderate insertion loss and group delay fluctuation. Small size and good matching of input and output ports.

附图说明Description of drawings

图1是本发明一种具有平坦群时延特性的宽带负群时延微波电路的原理图;1 is a schematic diagram of a broadband negative group delay microwave circuit with flat group delay characteristic of the present invention;

图2是本发明一种具有平坦群时延特性的宽带负群时延微波电路的群时延曲线图;2 is a group delay curve diagram of a broadband negative group delay microwave circuit with flat group delay characteristic of the present invention;

图3是本发明一种具有平坦群时延特性的宽带负群时延微波电路的S参数曲线图;3 is an S-parameter curve diagram of a broadband negative group delay microwave circuit with flat group delay characteristic of the present invention;

图中:1、并联单元,11、吸收电阻,12、第一传输线,13、第二传输线,14、第三传输线,15、第四传输线,2、微带线,21、输入微带线,22、输出微带线,3、匹配电阻,4、输入端口,5、输出端口。In the figure: 1, parallel unit, 11, absorption resistor, 12, first transmission line, 13, second transmission line, 14, third transmission line, 15, fourth transmission line, 2, microstrip line, 21, input microstrip line, 22. Output microstrip line, 3. Matching resistance, 4. Input port, 5. Output port.

具体实施方式Detailed ways

为使本发明的技术方案和优点更加清楚,下面结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚完整的描述:In order to make the technical solutions and advantages of the present invention clearer, the technical solutions in the embodiments of the present invention will be described clearly and completely below with reference to the accompanying drawings in the embodiments of the present invention:

如图1所示的一种具有平坦群时延特性的宽带负群时延微波电路,包括:并联单元1、微带线2、匹配电阻3、输入端口4和输出端口5;其中,所述并联单元1包括吸收电阻11、第一传输线12、第二传输线13、第三传输线14和第四传输线15;所述微带线2包括位于所述并联单元1两侧的输入微带线21和输出微带线22;As shown in FIG. 1, a broadband negative group delay microwave circuit with flat group delay characteristics includes: a parallel unit 1, a microstrip line 2, a matching resistor 3, an input port 4 and an output port 5; wherein, the The parallel unit 1 includes an absorption resistor 11 , a first transmission line 12 , a second transmission line 13 , a third transmission line 14 and a fourth transmission line 15 ; the microstrip line 2 includes an input microstrip line 21 and output microstrip line 22;

所述吸收电阻11阻值为r1、所述第一传输线12的特性阻抗为Z1、所述第二传输线13的特性阻抗为Z2、所述第三传输线14的特性阻抗为Z3、所述第四传输线15的特性阻抗为Z4、所述输入微带线21和输出微带线22的特性阻抗为Z5、所述匹配电阻3阻值为r2The resistance value of the absorption resistor 11 is r 1 , the characteristic impedance of the first transmission line 12 is Z 1 , the characteristic impedance of the second transmission line 13 is Z 2 , the characteristic impedance of the third transmission line 14 is Z 3 , The characteristic impedance of the fourth transmission line 15 is Z 4 , the characteristic impedance of the input microstrip line 21 and the output microstrip line 22 is Z 5 , and the resistance value of the matching resistor 3 is r 2 ;

所述输入端口4通过匹配电阻3与输出端口5连接构成上支路;The input port 4 is connected with the output port 5 through the matching resistor 3 to form an upper branch;

所述输入端口4连接所述输入微带线21与所述并联单元1并联后与所述输出微带线22连接,最后与所述输出端口5连接构成下支路。The input port 4 is connected to the input microstrip line 21 in parallel with the parallel unit 1, then connected to the output microstrip line 22, and finally connected to the output port 5 to form a lower branch.

所述并联单元1由所述吸收电阻11经所述第一传输线12与所述第二传输线13串联,之后与所述第三传输线14和所述第四传输线15并联后结构相连接构成。The parallel unit 1 is formed by connecting the absorption resistor 11 in series with the second transmission line 13 via the first transmission line 12 , and then in parallel with the third transmission line 14 and the fourth transmission line 15 .

进一步的,宽带平坦负群时延实现条件为:所述第一传输线12、第二传输线13、第三传输线14、第四传输线15、输入微带线21和输出微带线22的长度都为中心频率所对应波长的四分之一。Further, the realization condition of broadband flat negative group delay is: the lengths of the first transmission line 12, the second transmission line 13, the third transmission line 14, the fourth transmission line 15, the input microstrip line 21 and the output microstrip line 22 are all quarter of the wavelength corresponding to the center frequency.

通过改变所述第一传输线12、第二传输线13、第三传输线14、第四传输线15、输入微带线21和输出微带线22的特性阻抗,可以调节群时延的平坦度以及负群时延带宽。By changing the characteristic impedance of the first transmission line 12 , the second transmission line 13 , the third transmission line 14 , the fourth transmission line 15 , the input microstrip line 21 and the output microstrip line 22 , the flatness of the group delay and the negative group can be adjusted. delay bandwidth.

进一步的,电路的传输系数为:Further, the transmission coefficient of the circuit is:

Figure BDA0002265621440000071
Figure BDA0002265621440000071

群时延为:The group delay is:

Figure BDA0002265621440000072
Figure BDA0002265621440000072

进一步的,内部参数如下:Further, the internal parameters are as follows:

X1=(a3-a1)Z0 (3)X 1 =(a 3 -a 1 )Z 0 (3)

X2=(a1+Z0)(a3+Z0)-a2a4 (4)X 2 =(a 1 +Z 0 )(a 3 +Z 0 )-a 2 a 4 (4)

X3=(a4-a2)Z0 (5)X 3 =(a 4 -a 2 )Z 0 (5)

X4=a2(a3+Z0)+a4(a1+Z0) (6)X 4 =a 2 (a 3 +Z 0 )+a 4 (a 1 +Z 0 ) (6)

X1′=(a3′-a1′)Z0 (7)X 1 ′=(a 3 ′-a 1 ′)Z 0 (7)

X2′=a3′(a1+Z0)+a1′(a3+Z0)-a2′a4-a2a4′ (8)X 2 '=a 3 '(a 1 +Z 0 )+a 1 '(a 3 +Z 0 )-a 2 'a 4 -a 2 a 4 ' (8)

X3′=(a4′-a2′)Z0 (9)X 3 ′=(a 4 ′-a 2 ′)Z 0 (9)

X4′=a2′(a3+Z0)+a4′(a1+Z0)-a1′a4-a2a3′ (10)X 4 ′=a 2 ′(a 3 +Z 0 )+a 4 ′(a 1 +Z 0 )-a 1 ′a 4 -a 2 a 3 ′ (10)

进一步的,内部参数如下:Further, the internal parameters are as follows:

Figure BDA0002265621440000081
Figure BDA0002265621440000081

Figure BDA0002265621440000082
Figure BDA0002265621440000082

Figure BDA0002265621440000083
Figure BDA0002265621440000083

Figure BDA0002265621440000084
Figure BDA0002265621440000084

Figure BDA0002265621440000085
Figure BDA0002265621440000085

Figure BDA0002265621440000086
Figure BDA0002265621440000086

Figure BDA0002265621440000087
Figure BDA0002265621440000087

Figure BDA0002265621440000088
Figure BDA0002265621440000088

Figure BDA0002265621440000089
Figure BDA0002265621440000089

Figure BDA0002265621440000091
Figure BDA0002265621440000091

Figure BDA0002265621440000092
Figure BDA0002265621440000092

Figure BDA0002265621440000093
Figure BDA0002265621440000093

进一步的,内部参数如下:Further, the internal parameters are as follows:

Figure BDA0002265621440000094
Figure BDA0002265621440000094

P′=P1′-P2′ (20)P'=P 1 '-P 2 ' (20)

进一步的,内部参数如下:Further, the internal parameters are as follows:

Figure BDA0002265621440000103
Figure BDA0002265621440000103

Figure BDA0002265621440000104
Figure BDA0002265621440000104

为了对本发明所提供的一种具有平坦群时延特性的宽带负群时延微波电路做进一步说明,下面以本发明技术方案为前提下进行实施的具体实例进行详细说明,但本发明的保护范围不限于下述的实施例,下述实施例中所用方法如无特别说明均为常规方法。In order to further illustrate the broadband negative group delay microwave circuit with flat group delay characteristics provided by the present invention, the following specific examples of implementation under the premise of the technical solution of the present invention will be described in detail, but the protection scope of the present invention will be described in detail below. Not limited to the following examples, the methods used in the following examples are conventional methods unless otherwise specified.

具体实例:本实例列举了一种具有平坦群时延特性的宽带负群时延微波电路在其中心工作频率为1.0GHz时的情况进行说明。如图2所示,本发明所述的具有平坦群时延特性的宽带负群时延微波电路在中心频率1.0GHz处的群时延值为-0.5ns,在0.675GHz~1.351GHz的频率范围内,群时延均为负值;在0.776GHz~1.281GHz的频率范围内,群时延的波动为±5%,实现了宽带平坦负群时延特性。如图3所示,实验证明在1.0GHz频率处,本发明所述具有平坦群时延特性的宽带负群时延微波电路的信号衰减为18.8dB,输入输出端口的回波损耗达到了31.8dB,并且在平坦群时延频率范围0.776GHz~1.281GHz内输入输出端口的回波损耗均大于20dB,在群时延为负值的0.675GHz~1.351GHz频率范围内输入输出端口的回波损耗大于15dB,说明输入输出端口在较宽的频率范围内获得了良好的匹配性能。Specific example: In this example, a broadband negative group delay microwave circuit with flat group delay characteristics is described when its center operating frequency is 1.0GHz. As shown in Fig. 2, the group delay value of the broadband negative group delay microwave circuit with flat group delay characteristic of the present invention is -0.5ns at the center frequency of 1.0GHz, and the frequency range of 0.675GHz~1.351GHz Within the frequency range of 0.776GHz to 1.281GHz, the group delay fluctuation is ±5%, which realizes the broadband flat negative group delay characteristic. As shown in Figure 3, the experiment proves that at 1.0GHz frequency, the signal attenuation of the broadband negative group delay microwave circuit with flat group delay characteristic of the present invention is 18.8dB, and the return loss of the input and output ports reaches 31.8dB , and the return loss of the input and output ports in the flat group delay frequency range of 0.776GHz to 1.281GHz is greater than 20dB, and the return loss of the input and output ports in the frequency range of 0.675GHz to 1.351GHz where the group delay is negative 15dB, indicating that the input and output ports have obtained good matching performance in a wide frequency range.

综上所述,本发明所述的一种具有平坦群时延特性的宽带负群时延微波电路实现了宽带平坦负群时延特性,并且衰减和时延波动较小,输入输出端口匹配良好,同时具有设计方法简单等特点,非常适合应用于各类射频微波系统。To sum up, the broadband negative group delay microwave circuit with flat group delay characteristic of the present invention realizes the broadband flat negative group delay characteristic, and the attenuation and delay fluctuation are small, and the input and output ports are well matched. At the same time, it has the characteristics of simple design method, which is very suitable for various RF microwave systems.

以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。The above description is only a preferred embodiment of the present invention, but the protection scope of the present invention is not limited to this. The equivalent replacement or change of the inventive concept thereof shall be included within the protection scope of the present invention.

Claims (3)

1. A broadband negative group delay microwave circuit having a flat group delay characteristic, comprising: the device comprises a parallel unit (1), a microstrip line (2), a matching resistor (3), an input port (4) and an output port (5); the parallel unit (1) comprises an absorption resistor (11), a first transmission line (12), a second transmission line (13), a third transmission line (14) and a fourth transmission line (15); the first transmission line (12) is connected with the absorbing resistor (11) in series and then connected with the second transmission line (13) in series, and the third transmission line (14) is connected with the fourth transmission line (15) in parallel and then connected with the second transmission line (13) in series; the microstrip line (2) comprises an input microstrip line (21) and an output microstrip line (22) which are positioned on two sides of the parallel unit (1); the input port (4) is connected with the output port (5) through the matching resistor (3) to form an upper branch circuit; the input port (4) is connected with the input microstrip line (21), then is connected with the parallel unit (1) in parallel, then is connected with the output microstrip line (22), and finally is connected with the output port (5) to form a lower branch.
2. A broadband negative group delay microwave circuit having a flat group delay characteristic as claimed in claim 1, wherein: the broadband flat negative group time delay implementation condition is as follows: the lengths of the first transmission line (12), the second transmission line (13), the third transmission line (14), the fourth transmission line (15), the input microstrip line (21) and the output microstrip line (22) are all one fourth of the wavelength corresponding to the central frequency.
3. A broadband negative group delay microwave circuit having a flat group delay characteristic as claimed in claim 1, wherein: the flatness of the circuit group delay and the negative group delay bandwidth are adjusted by changing the characteristic impedance of the first transmission line (12), the second transmission line (13), the third transmission line (14), the fourth transmission line (15), the input microstrip line (21) and the output microstrip line (22).
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