CN110034367A - High isolation broadband power divider based on vertical ellipse coupled structure - Google Patents

Abstract

The invention discloses a high-isolation broadband power divider based on a multi-layer ellipse defect ground structure. The power divider includes a three-layer structure. From top to bottom, there are a top signal layer, a middle metal ground layer and a bottom signal layer. The layer includes a top layer dielectric substrate and a first input port, a first output port, a second output port, a first elliptical transmission unit, a second elliptical transmission unit, a third elliptical transmission unit and a first T-type power division structure and impedance matching circuit; the middle metal ground layer includes a first elliptical defect unit, a second elliptical defect unit and a third elliptical defect unit; the underlying signal layer includes an underlying dielectric substrate, a second input port, a third output port, and a fourth output port , a fourth elliptical transmission unit, a fifth elliptical transmission unit, a sixth elliptical transmission unit, a second T-type power division structure and an impedance matching circuit. The high isolation broadband power divider of the present invention has a simple structure and excellent performance.

Description

High isolation broadband power divider based on vertical elliptical coupling structure

technical field

The invention belongs to the technical field of microwave transmission devices, in particular to a high-isolation broadband power divider based on a vertical elliptical coupling structure.

Background technique

As a vital component in wireless communication and phased array systems, power dividers are widely used in power amplifiers, antenna feeds, and other multi-channel distribution networks.

In modern radar communication, the use of large-scale array antennas and higher signal transmission rates lead to an urgent need for a high-isolation broadband power divider that can be used in high-power applications, while the traditional Wilkinson power divider due to heat dissipation The problem and the limitation of relative bandwidth can no longer meet the needs of contemporary technology. Gysel power divider solves the problem of heat dissipation, but the relative bandwidth is only 20%. How to realize high isolation broadband power divider has become one of the current research hotspots.

SUMMARY OF THE INVENTION

The purpose of the present invention is to provide a high-isolation broadband power divider based on a vertical elliptical coupling structure that satisfies high-power applications.

The technical solution for realizing the purpose of the present invention: a high isolation broadband power divider based on a vertical elliptical coupling structure, comprising a top signal layer, a middle metal ground layer and a bottom signal layer;

The top signal layer includes a top dielectric substrate, a first input port, a first elliptical transmission unit, a first transmission line, a first T-type power division structure and its impedance matching circuit, a second transmission line, a third transmission line, a second elliptical transmission unit, a third elliptical transmission unit, a first output port, and a second output port; the intermediate metal formation layer includes a first elliptical defect unit, a second elliptical defect unit, and a third elliptical defect unit; the underlying signal layer includes an underlying dielectric substrate, a Two input ports, the fourth elliptical transmission unit, the fourth transmission line, the second T-type power division structure and its impedance matching circuit, the fifth transmission line, the fifth elliptical transmission unit, the third output port, the sixth transmission line, the sixth elliptical transmission unit, the fourth output port;

The top signal layer and the bottom signal layer are mirror-symmetrical with respect to the middle metal layer; the first elliptical transmission unit and the fourth elliptical transmission unit are respectively located above and below the first elliptical defect unit, the second elliptical transmission unit and the fifth The elliptical transmission unit is located above and below the second elliptical defect ground unit, respectively, and the third elliptical transmission unit and the sixth elliptical transmission unit are respectively located above and below the third elliptical defect ground unit.

Compared with the prior art, the significant advantages of the present invention are: (1) The high isolation broadband power splitter of the present invention adopts a vertical elliptical coupling structure, which can realize strong coupling between transmission lines, and achieve more than Wide relative bandwidth and controllable center frequency; (2) The high isolation broadband power divider of the present invention has relatively low insertion loss due to the lack of isolation resistance; (3) The high isolation broadband power divider of the present invention Simple structure and convenient processing.

Description of drawings

FIG. 1 is a schematic structural diagram of the top signal layer of the high isolation broadband power divider of the present invention.

FIG. 2 is a schematic diagram of the structure of the intermediate metal stratum of the high isolation broadband power divider of the present invention.

FIG. 3 is a schematic structural diagram of the bottom signal layer of the high isolation broadband power divider of the present invention.

FIG. 4 is a frequency response diagram of the high isolation broadband power divider of the present invention.

Detailed ways

A high isolation broadband power divider based on a vertical elliptical coupling structure, comprising a top signal layer, a middle metal ground layer and a bottom signal layer;

As shown in FIG. 1, the top signal layer includes a top dielectric substrate 1, a first input port 2, a first elliptical transmission unit 3, a first transmission line 4, a first T-type power division structure and its impedance matching circuit 5, and a second transmission line 6. The third transmission line 9, the second elliptical transmission unit 7, the third elliptical transmission unit 10, the first output port 8, the second output port 11; as shown in FIG. 2, the intermediate metal formation includes the first elliptical defect ground unit 13 , the second elliptical defect ground unit 15 and the third elliptical defect ground unit 14; as shown in FIG. 3, the underlying signal layer includes the underlying dielectric substrate 16, the second input port 17, the fourth elliptical transmission unit 18, the fourth transmission line 19, The second T-type power division structure and its impedance matching circuit 20, the fifth transmission line 26, the fifth elliptical transmission unit 25, the third output port 24, the sixth transmission line 23, the sixth elliptical transmission unit 22, and the fourth output port 21;

The top signal layer and the bottom signal layer are mirror-symmetrical with respect to the middle metal layer; the first elliptical transmission unit 3 and the fourth elliptical transmission unit 18 are respectively located above and below the first elliptical defect ground unit 13, and the second elliptical transmission unit 7 and the fifth elliptical transmission unit 25 are located above and below the second elliptical defect ground unit 15, respectively, and the third elliptical transmission unit 10 and the sixth elliptical transmission unit 22 are located above and below the third elliptical defect ground unit 14, respectively.

The first input port 2, the first elliptical transmission unit 3, and the first transmission line 4 are connected in sequence, and the first transmission line 4 is connected with the second transmission line 6 and the third transmission line 9 through the first T-type power division structure and its impedance matching circuit 5, The second transmission line 6 is connected to the second elliptical transmission unit 7 and the first output port 8 in sequence; the third transmission line 9 is connected to the third elliptical transmission unit 10 and the second output port 11 in sequence; the second input port 17 and the fourth elliptical transmission The unit 18 and the fourth transmission line 19 are connected in sequence, the fourth transmission line 19 is connected with the fifth transmission line 26 and the sixth transmission line 23 through the second T-type power division structure and its impedance matching circuit 20, and the fifth transmission line 26 is connected with the fifth elliptical transmission unit 25. The third output port 24 is connected in sequence, and the sixth transmission line 23 is connected with the sixth elliptical transmission unit 22 and the fourth output port 21 in sequence.

The first elliptical transmission unit 3, the second elliptical transmission unit 7, the third elliptical transmission unit 10, the fourth elliptical transmission unit 18, the fifth elliptical transmission unit 25 and the sixth elliptical transmission unit 22 have exactly the same shape and size , and branches of the same length are located on both sides of the elliptical transmission unit; the first T-type power division structure and the second power division structure and their matching circuits have exactly the same shape and size, and the matching circuit is located behind the output end of the T-type power division structure.

The top dielectric substrate 1 and the bottom dielectric substrate 16 are both RO4350B with a dielectric constant of 3.66 and a thickness of 0.254 mm.

The first elliptical defect unit, the second elliptical defect unit and the third elliptical defect unit are elliptical units etched in the metal formation.

The elliptical transmission element and the elliptical defect ground element have the same major axis width.

When the signal flows in from the first input port, the signal flows out from the third output port and the fourth output port; when the signal flows in from the second input port, the signal flows out from the first output port and the second output port.

The S-parameter performance of the power divider is changed by changing the size of the elliptical transmission unit, and the coupling coefficient is changed by changing the center frequency, the length of the major and minor axes of the elliptical transmission unit and the length of the major and minor axes of the elliptical defect. The S-parameter performance of the power divider is optimized by adjusting the length of the open branch.

The present invention will be described in detail below with reference to the embodiments.

Example

The high isolation broadband power divider based on the vertical elliptical coupling structure includes the top signal layer, the middle metal ground layer, and the bottom signal layer.

As shown in FIG. 1, the top signal layer includes a top dielectric substrate 1, a first input port 2, a first elliptical transmission unit 3, a first transmission line 4, a first power division structure and its matching circuit 5, a second transmission line 6 and a first Three transmission lines 9 , second elliptical transmission unit 7 and third elliptical transmission unit 10 , first output port 8 and second output port 11 . Both ends of the first elliptical transmission unit 3 are respectively connected to the first input port 2 and the first transmission line 4 , the first transmission line 4 is connected to the first power division structure and its matching circuit 5 , and then connected to the second transmission line 6 and the third transmission line 9 , the second transmission line 6 and the third transmission line 9 are respectively connected with the second elliptical transmission unit 7 and the third elliptical transmission 10 to the first output port 8 and the second output port 11, and the top dielectric substrate 1 is RO4350B with a dielectric constant of 3.66 , the thickness is 0.254mm.

As shown in FIG. 2 , the intermediate metal formation includes a first elliptical defect unit 13 , a second elliptical defect unit 15 and a third elliptical defect unit 14 , which are located between the first elliptical transmission unit 3 and the fourth elliptical transmission unit 18 respectively. between the second elliptical transmission unit 7 and the fifth elliptical transmission unit 25 , and between the third elliptical transmission unit 10 and the sixth elliptical transmission unit 22 .

As shown in FIG. 3 , the underlying signal layer includes an underlying dielectric substrate 16 , a second input port 17 , a fourth elliptical transmission unit 18 , a fourth transmission line 19 , a second power division structure and its matching circuit 20 , a fifth transmission line 21 and a fourth transmission line 19 . Six transmission lines 26 , fifth elliptical transmission unit 25 and sixth elliptical transmission unit 22 , third output port 24 and fourth output port 21 . Both ends of the fourth elliptical transmission unit 18 are connected to the second input port 17 and the fourth transmission line 19 respectively, and the fourth transmission line 19 is connected to the second power division structure and its matching circuit 20 , and then connected to the fifth transmission line 21 and the sixth transmission line 26 , the fifth transmission line 21 and the sixth transmission line 26 are respectively connected with the fifth elliptical transmission unit 25 and the sixth elliptical transmission 22 to the third output port 24 and the fourth output port 21, and the underlying dielectric substrate 16 is RO4350B with a dielectric constant of 3.66 , the thickness is 0.254mm.

The first elliptical defect ground unit 13, the second elliptical defect ground unit 15 and the third elliptical defect ground unit 14 used in this embodiment are elliptical structures etched on the metal ground plane. Both the microstrip patch and the intermediate metal formation are made of copper.

The electromagnetic simulation software HFSS is used to simulate the new type of high isolation broadband filter. Figure 4 shows the results of the simulation calculation of the frequency response characteristics of the power divider. The short axis of the elliptical transmission unit is Dm=4.8mm, and the short axis of the elliptical defect unit is Ds=7.4mm. The simulation results show that the bandwidth of this example ranges from 4GHz to 10GHz, the relative bandwidth reaches 100%, and it has broadband characteristics. The insertion loss in the broadband is less than 4dB, the return loss of the output port is less than -15dB, and the isolation between the output ports is less than -20dB.

To sum up, the broadband high isolation power divider provided by the present invention has the advantages of wide frequency band, large isolation, low loss, etc., and at the same time, the structure is relatively simple, and is suitable for being widely used in various communication networks.

Claims (6)

1. a high isolation broadband power divider based on vertical ellipse coupling structure, is characterized in that, comprises top signal layer, middle metal ground layer and bottom signal layer; The top signal layer comprises a top dielectric substrate (1), a first input port (2), a first elliptical transmission unit (3), a first transmission line (4), a first T-type power division structure and an impedance matching circuit (5) thereof , the second transmission line (6), the third transmission line (9), the second elliptical transmission unit (7), the third elliptical transmission unit (10), the first output port (8) and the second output port (11); the middle The metal formation layer includes a first elliptical defect unit (13), a second elliptical defect unit (15) and a third elliptical defect unit (14); the underlying signal layer includes an underlying dielectric substrate (16), a second input port (17) ), the fourth elliptical transmission unit (18), the fourth transmission line (19), the second T-type power division structure and its impedance matching circuit (20), the fifth transmission line (26), the fifth elliptical transmission unit (25), a third output port (24), a sixth transmission line (23), a sixth elliptical transmission unit (22) and a fourth output port (21); The top signal layer and the bottom signal layer are mirror-symmetrical with respect to the middle metal ground layer; the first elliptical transmission unit (3) and the fourth elliptical transmission unit (18) are respectively located above and below the first elliptical defect ground unit (13) , the second elliptical transmission unit (7) and the fifth elliptical transmission unit (25) are respectively located above and below the second elliptical defect unit (15), the third elliptical transmission unit (10) and the sixth elliptical transmission unit (22) ) are located above and below the third elliptical defect ground unit (14), respectively. 2. The high-isolation broadband power divider based on a vertical elliptical coupling structure according to claim 1, wherein the first input port (2), the first elliptical transmission unit (3), and the first transmission line (4) are sequentially connection, the first transmission line (4) is connected to the second transmission line (6) and the third transmission line (9) through the first T-type power division structure and its impedance matching circuit (5), and the second transmission line (6) is connected to the second ellipse The transmission unit (7) and the first output port (8) are connected in sequence, and the third transmission line (9) is connected with the third elliptical transmission unit (10) and the second output port (11) in sequence; the second input port (17), The fourth elliptical transmission unit (18) and the fourth transmission line (19) are connected in sequence, and the fourth transmission line (19) is connected to the fifth transmission line (26), the sixth transmission line (19) through the second T-type power division structure and its impedance matching circuit (20) The transmission line (23) is connected, the fifth transmission line (26) is connected with the fifth elliptical transmission unit (25) and the third output port (24) in turn, and the sixth transmission line (23) is connected with the sixth elliptical transmission unit (22), the fourth The output ports (21) are connected in sequence. 3. The high-isolation broadband power divider based on the vertical elliptical coupling structure according to claim 1, wherein the first elliptical transmission unit (3), the second elliptical transmission unit (7), the third elliptical transmission unit The unit (10), the fourth elliptical transmission unit (18), the fifth elliptical transmission unit (25) and the sixth elliptical transmission unit (22) have exactly the same shape and size, and branches of the same length are located on both sides of the elliptical transmission unit ; The first T-type power division structure and the second power division structure and its matching circuit have exactly the same shape and size, and the matching circuit is located behind the output end of the T-type power division structure. 4. The high isolation broadband power divider based on the vertical elliptical coupling structure according to claim 1, wherein the dielectric constant of the top dielectric substrate (1) is 3.66 and the thickness is 0.254mm. 5. The high-isolation broadband power divider based on the vertical elliptical coupling structure according to claim 1, wherein the underlying dielectric substrate (16) has a dielectric constant of 3.66 and a thickness of 0.254 mm. 6 . The high isolation broadband power divider based on the vertical elliptical coupling structure according to claim 1 , wherein the first elliptical defect unit, the second elliptical defect unit and the third elliptical defect unit are in the metal formation. 7 . Etched elliptical cells.