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CN110649008A - High-color-rendering LED and production method thereof - Google Patents

High-color-rendering LED and production method thereof Download PDF

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CN110649008A
CN110649008A CN201910875961.XA CN201910875961A CN110649008A CN 110649008 A CN110649008 A CN 110649008A CN 201910875961 A CN201910875961 A CN 201910875961A CN 110649008 A CN110649008 A CN 110649008A
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color rendering
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易汉平
周虎
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Tianjin Baodi Bauhinia Innovation Institute
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/851Wavelength conversion means
    • H10H20/8511Wavelength conversion means characterised by their material, e.g. binder
    • H10H20/8512Wavelength conversion materials
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
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    • H10H20/036Manufacture or treatment of packages

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Abstract

本发明提供了一种高显色性LED及其生产方法。该高显色性LED包括:一个605‑650纳米波段的红光芯片、一个525‑555纳米波段的绿光芯片、两个450‑475纳米波段的蓝光芯片,其中,红光芯片、绿光芯片和蓝光芯片的额定工作电流相同或相当,四个芯片串联在一起,并且,两个蓝光芯片上覆盖有黄光YAG荧光粉。上述高显色性LED的制备方法包括以下步骤:将一个红光芯片、一个绿光芯片、两个蓝光芯片固定;将每个芯片串联绑定;将黄光YAG荧光粉覆盖在蓝光芯片上;用透明封装胶作发光模组的整体封装,得到所述高显色性LED。本发明的LED光源增加了绿光与红光,蓝光比重自然降低,显色性自然提高,其显色性在95以上。

Figure 201910875961

The invention provides a high color rendering LED and a production method thereof. The high color rendering LED includes: a red light chip in the 605-650 nanometer band, a green light chip in the 525-555 nanometer band, and two blue light chips in the 450-475 nanometer band, wherein the red light chip and the green light chip are The rated working current of the blue light chip is the same or equivalent, the four chips are connected in series, and the two blue light chips are covered with yellow light YAG phosphor. The preparation method of the above-mentioned high color rendering LED includes the following steps: fixing a red light chip, a green light chip, and two blue light chips; binding each chip in series; covering the yellow light YAG phosphor on the blue light chip; The high color rendering LED is obtained by using a transparent encapsulating glue as the overall encapsulation of the light-emitting module. The LED light source of the invention increases green light and red light, the proportion of blue light is naturally reduced, and the color rendering property is naturally improved, and the color rendering property is above 95.

Figure 201910875961

Description

一种高显色性LED及其生产方法A kind of high color rendering LED and its production method

技术领域technical field

本发明涉及一种高显色性LED及其生产方法,属于LED制备技术领域。The invention relates to a high color rendering LED and a production method thereof, belonging to the technical field of LED preparation.

背景技术Background technique

LED白光光源一般采用合成方式,一种是由多个发不同颜色光的芯片复合封装成白光光源,另一种是单颜色芯片与荧光粉复合成白光光源。The LED white light source generally adopts a synthesis method. One is a white light source that is compositely packaged by multiple chips that emit light of different colors, and the other is a single-color chip and phosphors that are composited to form a white light source.

多芯片封装的白光光源由于各种芯片的衰减不一致,使用过程容易出现色温漂移。蓝光单芯片复合荧光粉的白光光源容易出现蓝光偏多,显色性不高的问题。Due to the inconsistent attenuation of various chips, the white light source packaged with multiple chips is prone to color temperature drift during use. The white light source of the blue light single-chip composite phosphor is prone to the problem of too much blue light and low color rendering.

发明内容SUMMARY OF THE INVENTION

为解决上述技术问题,本发明的目的在于提供一种LED,其显色性能够提高到90以上。In order to solve the above technical problems, the purpose of the present invention is to provide an LED whose color rendering can be improved to more than 90.

为达到上述目的,本发明提供了一种高显色性LED,其包括一个605-650纳米波段的红光芯片、一个525-555纳米波段的绿光芯片、两个450-475纳米波段的蓝光芯片,四个芯片串联在一起,并且,两个蓝光芯片上覆盖有黄光YAG荧光粉。In order to achieve the above object, the present invention provides a high color rendering LED, which includes a red light chip with a wavelength of 605-650 nanometers, a green light chip with a wavelength of 525-555 nanometers, and two blue light chips with a wavelength of 450-475 nanometers. Chip, four chips are connected in series, and the two blue chips are covered with yellow light YAG phosphor.

本发明通过多波段发光芯片与激发荧光形成多波段的复合白光,具体是将绿光芯片、红光芯片与蓝光芯片加黄光荧光粉在一个支架内复合封装,得到具有较高显色性的LED。The invention forms a multi-band composite white light through the multi-band light-emitting chip and the excitation fluorescence, specifically, the green light chip, the red light chip, the blue light chip and the yellow light phosphor are compounded and packaged in a bracket to obtain a composite white light with high color rendering. LED.

根据本发明的具体实施方案,优选地,上述高显色性LED所采用的红光芯片、绿光芯片和蓝光芯片的额定工作电流相同或相当,例如:各芯片的额定电流均为20mA、150mA、200mA或300mA等;对于芯片的尺寸、功率等参数不做要求。According to a specific embodiment of the present invention, preferably, the rated working currents of the red light chips, green light chips and blue light chips used in the above-mentioned high color rendering LEDs are the same or equivalent, for example: the rated currents of each chip are 20mA, 150mA , 200mA or 300mA, etc.; there is no requirement for parameters such as chip size and power.

根据本发明的具体实施方案,上述红光芯片可以选择630纳米波段的红光芯片。According to a specific embodiment of the present invention, the above-mentioned red light chip can be selected from a red light chip with a wavelength of 630 nanometers.

根据本发明的具体实施方案,上述绿光芯片可以选择550纳米波段的绿光芯片。According to a specific embodiment of the present invention, the green light chip in the 550 nm wavelength band can be selected as the green light chip.

根据本发明的具体实施方案,上述蓝光芯片可以选择460纳米波段的蓝光芯片。According to a specific embodiment of the present invention, the above-mentioned blue light chip can be selected from a blue light chip with a wavelength of 460 nanometers.

在本发明的一个具体实施方案中,本发明的高显色性LED可以包括一个630纳米波段的红光芯片、一个550纳米波段的绿光芯片、两个460纳米波段的蓝光芯片,四个芯片串联在一起,并且,两个蓝光芯片上覆盖有黄光YAG荧光粉。In a specific embodiment of the present invention, the high color rendering LED of the present invention may include one red light chip in the 630 nm band, one green light chip in the 550 nm band, two blue light chips in the 460 nm band, and four chips. connected in series, and the two blue chips are covered with yellow light YAG phosphors.

在上述高显色性LED中,优选地,四个芯片设置在平板支架上,优选散热与反光效果较好的平板支架。In the above-mentioned high color rendering LED, preferably, four chips are arranged on a flat support, preferably a flat support with better heat dissipation and light reflection effects.

在上述高显色性LED中,优选地,该LED通过透明封装胶进行整体封装。所采用的透明封装胶例如环氧胶和/或聚酯等。In the above-mentioned high color rendering LED, preferably, the LED is integrally encapsulated by a transparent encapsulant. The transparent encapsulant used is, for example, epoxy and/or polyester.

本发明还提供了上述高显色性LED的生产方法,其包括以下步骤:The present invention also provides a method for producing the above-mentioned high color rendering LED, which comprises the following steps:

将一个红光芯片、一个绿光芯片、两个蓝光芯片固定;Fix one red light chip, one green light chip, and two blue light chips;

将每个芯片串联绑定;Bond each chip in series;

将黄光YAG荧光粉覆盖在蓝光芯片上;Cover the yellow light YAG phosphor on the blue light chip;

用透明封装胶作发光模组的整体封装,得到所述LED。The LED is obtained by using a transparent encapsulating glue as the overall encapsulation of the light-emitting module.

本发明所提供的LED可以发出多波段的光,包括蓝光、绿光、黄光、红光,因此具有较高的显色性。蓝光单芯片复合荧光粉的白光光源主要是蓝光与黄光,因此,蓝光相对偏多,由于光源缺乏红光,因此,显色性较差。本发明的LED光源增加了绿光与红光,蓝光比重自然降低,显色性自然提高,其显色性在95以上。The LED provided by the present invention can emit light in multiple wavelength bands, including blue light, green light, yellow light, and red light, and therefore has high color rendering. The white light source of the blue single-chip composite phosphor is mainly blue light and yellow light. Therefore, the blue light is relatively high. Because the light source lacks red light, the color rendering is poor. The LED light source of the invention increases green light and red light, the proportion of blue light is naturally reduced, the color rendering property is naturally improved, and the color rendering property is above 95.

LED是多芯片封装的白光光源,其是复合光源,如果蓝光芯片出现衰减,光源就会出现红光相对变多,色温就会降低。本发明的LED所发出的白光可以看成二组,一是红绿蓝复合白光,即芯片组合产生白光;一是蓝黄复合白光,即蓝光芯片与YAG荧光粉复合产生白光,因此,本发明的LED具有较好的色温稳定性。LED is a multi-chip packaged white light source, which is a composite light source. If the blue light chip is attenuated, the light source will have relatively more red light, and the color temperature will decrease. The white light emitted by the LED of the present invention can be regarded as two groups, one is red, green and blue composite white light, that is, the chip combination produces white light; the other is blue-yellow composite white light, that is, the blue chip and YAG phosphor are combined to produce white light. Therefore, the present invention The LED has good color temperature stability.

附图说明Description of drawings

图1为实施例1提供的高显色性LED的结构示意图。FIG. 1 is a schematic structural diagram of the high color rendering LED provided in Example 1. As shown in FIG.

图2为实施例1提供的高显色性LED的积分球电光源性能测试结果图。FIG. 2 is a graph showing the performance test result of the integrating sphere electric light source of the high color rendering LED provided in Example 1. FIG.

具体实施方式Detailed ways

为了对本发明的技术特征、目的和有益效果有更加清楚的理解,现对本发明的技术方案进行以下详细说明,但不能理解为对本发明的可实施范围的限定。In order to have a clearer understanding of the technical features, purposes and beneficial effects of the present invention, the technical solutions of the present invention are now described in detail below, but should not be construed as limiting the scope of implementation of the present invention.

实施例1Example 1

本实施例提供了一种高显色性LED,其结构如图1所示。该LED包括一个630纳米波段的红光芯片、一个550纳米波段的绿光芯片、两个460纳米波段的蓝光芯片,其中,上述四个芯片的额定工作电流相同,例如20mA、150mA、200mA或300mA。This embodiment provides a high color rendering LED, the structure of which is shown in FIG. 1 . The LED includes a red light chip in the 630nm band, a green light chip in the 550nm band, and two blue light chips in the 460nm band, wherein the above four chips have the same rated operating current, such as 20mA, 150mA, 200mA or 300mA .

四个芯片串联在一起并固定在平板支架之上,并且,两个蓝光芯片上覆盖有黄光YAG荧光粉。该LED通过透明封装胶进行整体封装。The four chips are connected in series and fixed on the flat support, and the two blue chips are covered with yellow light YAG phosphor. The LED is encapsulated as a whole by a transparent encapsulant.

该LED是通过以下步骤生产的:This LED is produced through the following steps:

1、在平板支架上固定一个630纳米波段的红光芯片、一个550纳米波段的绿光芯片、二个460纳米波段的蓝光芯片;1. Fix one 630nm band red light chip, one 550nm band green light chip, and two 460nm band blue light chips on the flat bracket;

2、将每个芯片串联邦定;2. Set each chip in series;

3、将YAG荧光粉覆盖在460纳米波段的蓝光芯片上;3. Cover the YAG phosphor on the blue light chip in the 460 nm band;

4、用透明封装胶作发光模组的整体封装,得到LED。4. Use transparent encapsulating glue as the overall encapsulation of the light-emitting module to obtain LEDs.

对比例1Comparative Example 1

本对比例提供了一种LED,其是仅采用1个460纳米波段的蓝光芯片并覆盖黄光YAG荧光粉制成的LED,不采用的红光芯片和绿光芯片,其他结构和制备过程同实施例1。This comparative example provides an LED, which is made of only one blue light chip with a wavelength of 460 nanometers and covered with yellow light YAG phosphor powder. The red light chip and the green light chip are not used. Other structures and preparation processes are the same. Example 1.

对比例2Comparative Example 2

本对比例提供了一种LED,其是仅采用1个460纳米波段蓝光芯片、1个550纳米波段绿光芯片、1个630纳米波段红光芯片封装制成的LED,不采用黄色YAG荧光粉,其他结构和制备过程同实施例1。This comparative example provides an LED, which is an LED packaged with only one 460-nm-band blue light chip, one 550-nm-band green light chip, and one 630-nm-band red light chip, and does not use yellow YAG phosphors , and other structures and preparation processes are the same as in Example 1.

采用积分球电光源性能综合检测仪对LED以及直接进行检测,结果如图2所示。在图2中,1-3分别代表的是对比例1、对比例2、实施例1制备的LED。由图2的结果可以看出:实施例1的LED所覆盖的波长范围最广,显色性最高,可以达到95以上。The integrated sphere electric light source performance comprehensive detector is used to detect the LED and direct detection, and the results are shown in Figure 2. In FIG. 2 , 1-3 represent the LEDs prepared in Comparative Example 1, Comparative Example 2, and Example 1, respectively. It can be seen from the results in Fig. 2 that the LED of Example 1 covers the widest wavelength range and has the highest color rendering, which can reach more than 95.

Claims (10)

1. A high-color rendering LED comprises a red light chip with a wavelength of 605-650 nm, a green light chip with a wavelength of 525-555 nm and two blue light chips with a wavelength of 450-475 nm, wherein rated working currents of the red light chip, the green light chip and the blue light chips are the same or equivalent, the four chips are connected in series, and yellow YAG fluorescent powder covers the two blue light chips.
2. The high color rendering LED of claim 1, wherein the red chip is a 630 nm band red chip.
3. The high color rendering LED of claim 1 or 2, wherein the green chip is a 550 nm band green chip.
4. The high color rendering LED of any one of claims 1-3, wherein the blue chip is a 460 nm band blue chip.
5. The high color rendering LED according to any one of claims 1 to 4, wherein the high color rendering LED comprises a 630 nm band red chip, a 550 nm band green chip, two 460 nm band blue chips, the four chips are connected in series, and the two blue chips are covered with yellow YAG phosphor.
6. The high color rendering LED of claim 1, wherein four chips are disposed on a flat support.
7. The high color rendering LED according to claim 1, wherein the LED is integrally encapsulated by a transparent encapsulating glue.
8. The high color rendering LED of claim 7, wherein the transparent encapsulant comprises epoxy and/or polyester.
9. The high color rendering LED according to claim 1, wherein a rated current of each chip is 20mA, 150mA, 200mA, or 300 mA.
10. Method for producing a high color rendering LED according to any of claims 1 to 9, comprising the steps of:
fixing a red light chip, a green light chip and two blue light chips;
binding each chip in series;
covering yellow YAG fluorescent powder on a blue light chip;
and using transparent packaging glue as the integral packaging of the light-emitting module to obtain the high-color-rendering LED.
CN201910875961.XA 2019-09-17 2019-09-17 High-color-rendering LED and production method thereof Pending CN110649008A (en)

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JPH02238679A (en) * 1989-03-10 1990-09-20 Sanyo Electric Co Ltd Full color light emitting device
US5266817A (en) * 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
CN1862842A (en) * 2005-05-13 2006-11-15 光宝科技股份有限公司 LED components
CN101379341A (en) * 2006-01-31 2009-03-04 皇家飞利浦电子股份有限公司 White light source
CN101451657A (en) * 2008-11-25 2009-06-10 广州市鸿利光电子有限公司 Backlight light source and color mixing method thereof
CN101527982A (en) * 2008-03-03 2009-09-09 红蝶科技(深圳)有限公司 LED chip and LD chip hybrid-package light source and liquid crystal projecting apparatus
CN102278641A (en) * 2011-08-25 2011-12-14 上海亚明灯泡厂有限公司 White light-emitting diode (LED) lamp and method for generating high color rendering white light
CN208738238U (en) * 2018-05-18 2019-04-12 深圳市聚飞光电股份有限公司 Convex substrate LED and light emitting device

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02238679A (en) * 1989-03-10 1990-09-20 Sanyo Electric Co Ltd Full color light emitting device
US5266817A (en) * 1992-05-18 1993-11-30 Lin Paul Y S Package structure of multi-chip light emitting diode
CN1862842A (en) * 2005-05-13 2006-11-15 光宝科技股份有限公司 LED components
CN101379341A (en) * 2006-01-31 2009-03-04 皇家飞利浦电子股份有限公司 White light source
CN101527982A (en) * 2008-03-03 2009-09-09 红蝶科技(深圳)有限公司 LED chip and LD chip hybrid-package light source and liquid crystal projecting apparatus
CN101451657A (en) * 2008-11-25 2009-06-10 广州市鸿利光电子有限公司 Backlight light source and color mixing method thereof
CN102278641A (en) * 2011-08-25 2011-12-14 上海亚明灯泡厂有限公司 White light-emitting diode (LED) lamp and method for generating high color rendering white light
CN208738238U (en) * 2018-05-18 2019-04-12 深圳市聚飞光电股份有限公司 Convex substrate LED and light emitting device

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