CN110531286A - A kind of AMR sensor and preparation method thereof of anti-high-intensity magnetic field interference - Google Patents
A kind of AMR sensor and preparation method thereof of anti-high-intensity magnetic field interference Download PDFInfo
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Abstract
Description
技术领域technical field
本发明属于传感器制造技术领域，特别涉及一种抗强磁场干扰的AMR传感器及其制备方法。The invention belongs to the technical field of sensor manufacturing, in particular to an AMR sensor resistant to strong magnetic field interference and a preparation method thereof.
背景技术Background technique
在传统AMR传感器的设计制造中，通过采用巴贝电极的设计，来获得较好的线性范围。在磁阻条表面生长平行间隔排列的金属电极，金属电极与矩形磁阻条长边方向成45°。但是这样的设计存在重大缺陷，会极大的限制AMR传感器应用范围：当外界干扰磁场超过磁阻材料的矫顽场时，即使干扰磁场恢复到零场，矩形磁阻条的磁化状态取向存在反平行的两种排列状态，电流与磁阻条磁化取向呈现随机的45°和135°夹角，使得AMR磁场传感器无法对测试磁场输出线性的电压输出。目前商业产品在磁场超过约±5Oe时，无法主动恢复到正常工作状态，为了使得传感器在强磁场干扰后能够恢复正常工作状态，需要增加用于产生偏置磁场的额外装置，这会增加器件的生产成本和实际体积。In the design and manufacture of traditional AMR sensors, a better linear range is obtained by adopting the design of Barbey electrodes. Metal electrodes arranged in parallel and at intervals are grown on the surface of the magnetoresistive strip, and the metal electrode is 45° to the direction of the long side of the rectangular magnetoresistance strip. However, there are major defects in this design, which will greatly limit the application range of AMR sensors: when the external disturbance magnetic field exceeds the coercive field of the magnetoresistive material, even if the disturbance magnetic field returns to zero field, the orientation of the magnetization state of the rectangular magnetoresistive strip will be reversed. In the two parallel arrangement states, the current and the magnetization orientation of the magnetoresistive strip present random angles of 45° and 135°, making it impossible for the AMR magnetic field sensor to output a linear voltage output to the test magnetic field. At present, commercial products cannot actively return to the normal working state when the magnetic field exceeds about ±5Oe. In order to enable the sensor to return to the normal working state after the interference of the strong magnetic field, it is necessary to add an additional device for generating a bias magnetic field, which will increase the device’s Production cost and actual volume.
发明内容Contents of the invention
本发明的目的在于提供一种抗强磁场干扰的AMR传感器及其制备方法，以解决上述问题。The object of the present invention is to provide an AMR sensor resistant to strong magnetic field interference and a preparation method thereof, so as to solve the above problems.
为实现上述目的，本发明采用以下技术方案：To achieve the above object, the present invention adopts the following technical solutions:
一种抗强磁场干扰的AMR传感器，包括第一导电材料、第二导电材料和磁阻条；四个第一导电材料成四宫格状分布，若干磁阻条平行等间距设置，相邻的两个磁阻条之间的端部通过第二导电材料连接，使若干磁阻条形成S型串联结构；相邻的第一导电材料之间均设置有S型串联结构，形成惠斯通电桥，S型串联结构端部的磁阻条与第一导电材料连接；每个S型串联结构均与四宫格的中线成45度夹角；第一导电材料和第二导电材料均为导电金属。An AMR sensor resistant to strong magnetic field interference, including a first conductive material, a second conductive material, and a magnetoresistive strip; four first conductive materials are distributed in a quadrangular grid, and several magnetoresistive strips are arranged in parallel and equally spaced, and adjacent The ends between the two magnetic resistance strips are connected by the second conductive material, so that several magnetic resistance strips form an S-type series structure; S-type series structures are arranged between adjacent first conductive materials to form a Wheatstone bridge , the magnetoresistive strip at the end of the S-type series structure is connected to the first conductive material; each S-type series structure forms an angle of 45 degrees with the center line of the four-square grid; the first conductive material and the second conductive material are conductive metal .
进一步的，磁阻条为三明治结构，包括底层缓冲层、中间层和上层保护层；底层缓冲层材料为Ta，厚度为5nm，上层保护层材料为Ta，厚度为5nm，中间层包括铁磁层和反铁磁层，铁磁层为NiFe或NiCo，厚度为10nm-200nm；反铁磁层为NiO或IrMn，厚度为10nm-500nm。Further, the magnetoresistive strip is a sandwich structure, including a bottom buffer layer, a middle layer and an upper protective layer; the material of the bottom buffer layer is Ta with a thickness of 5nm, the material of the upper protective layer is Ta with a thickness of 5nm, and the middle layer includes a ferromagnetic layer and an antiferromagnetic layer, the ferromagnetic layer is NiFe or NiCo with a thickness of 10nm-200nm; the antiferromagnetic layer is NiO or IrMn with a thickness of 10nm-500nm.
进一步的，一种抗强磁场干扰的AMR传感器的制备方法，包括以下步骤：Further, a preparation method of an AMR sensor resistant to strong magnetic field interference, comprising the following steps:
步骤1，提供一个Si基底，并对Si基底进行预处理；Step 1, provide a Si substrate, and carry out pretreatment to Si substrate;
步骤2，在Si基底上滴加光刻胶后，使得光刻胶覆盖Si片；Step 2, after dropping the photoresist on the Si substrate, the photoresist covers the Si sheet;
步骤3，将旋涂光刻胶的Si基底放入烘箱内，使得光刻胶完全固化；Step 3, put the Si substrate with spin-coated photoresist in an oven, so that the photoresist is completely cured;
步骤4，经过第一预定义图形的掩膜版对第一光刻胶层进行紫外线曝光，显影，去除多余的光刻胶，在Si基底上留下第一预定义图形；Step 4, exposing the first photoresist layer to ultraviolet rays through the mask plate of the first predefined pattern, developing, removing excess photoresist, and leaving the first predefined pattern on the Si substrate;
步骤5，利用磁控溅射薄膜生长技术，在处理好的基底上生长第一、第二导电材料，第一、第二导电材料薄膜层厚度为50-100nm，第一、第二导电材料包括Ta或Au；Step 5, using magnetron sputtering thin film growth technology, grow the first and second conductive materials on the processed substrate, the thickness of the first and second conductive material film layers is 50-100nm, the first and second conductive materials include Ta or Au;
步骤6，去除第一层光刻胶，在生长有第一、第二导电材料的Si基底上滴加光刻胶后，使得光刻胶覆盖；Step 6, remove the first layer of photoresist, and drop photoresist on the Si substrate with the first and second conductive materials, so that the photoresist is covered;
步骤7，将旋涂光刻胶的Si基底放入烘箱内，使得光刻胶完全固化；Step 7, put the Si substrate with spin-coated photoresist in an oven, so that the photoresist is completely cured;
步骤8，经过第二预定义图形的掩膜版对第二光刻胶层进行紫外线曝光，显影，去除多余的光刻胶，在Si基底上留下第二预定义图形；Step 8, exposing the second photoresist layer to ultraviolet light through the mask plate of the second predefined pattern, developing, removing excess photoresist, and leaving the second predefined pattern on the Si substrate;
步骤9，利用磁控溅射薄膜生长技术，在处理好的基底上生长磁阻材料层，然后去除第二层光刻胶。Step 9, using the magnetron sputtering film growth technology to grow a magnetoresistive material layer on the processed substrate, and then remove the second layer of photoresist.
进一步的，步骤1中预处理包括：依次利用丙酮、酒精和去离子水分别超声清洗5min，之后用N2吹干，在烘箱内保持115℃烘20min。Further, the pretreatment in step 1 includes: sequentially using acetone, alcohol and deionized water to ultrasonically clean for 5 minutes, followed by blowing with N 2 and drying in an oven at 115°C for 20 minutes.
进一步的，步骤2和步骤6中，采用光刻胶的型号为APR-3510T，在Si基底上滴加光刻胶后，在匀胶机上先以600转速率旋转10s使得光刻胶覆盖Si片，再以4000转速率旋转40s使得光刻胶厚度均匀。Further, in steps 2 and 6, the model of the photoresist used is APR-3510T. After the photoresist is dropped on the Si substrate, the photoresist is first rotated at a rate of 600 rpm for 10 seconds so that the photoresist covers the Si sheet , and then rotated at 4000 rpm for 40s to make the thickness of the photoresist uniform.
进一步的，步骤3和步骤7中，烘箱内以115℃加热20min。Further, in step 3 and step 7, heat in an oven at 115° C. for 20 minutes.
进一步的，步骤9中，在薄膜生长过程中，对Si基底添加外部偏置磁场，偏置磁场方向与磁阻条夹角成45°，偏置磁场方向为水平横向。Further, in step 9, during the film growth process, an external bias magnetic field is added to the Si substrate, the direction of the bias magnetic field is at an angle of 45° to the magnetoresistive strip, and the direction of the bias magnetic field is horizontal and transverse.
与现有技术相比，本发明有以下技术效果：Compared with the prior art, the present invention has the following technical effects:
本发明去除了磁阻条表面巴贝电极层，利用铁磁/反铁磁材料耦合，实现了电流与磁阻长条夹角固定为45°或135°。保证了磁性材料磁化状态的稳定排列，保证传感器在强磁场干扰后保持正常稳定的工作状态。可以提高传感器抗强磁场干扰的能力，提高器件的工作效率和应用范围。The present invention removes the Barbey electrode layer on the surface of the magnetoresistance strip, uses ferromagnetic/antiferromagnetic material coupling, and realizes that the included angle between the current and the magnetoresistance strip is fixed at 45° or 135°. It ensures the stable arrangement of the magnetization state of the magnetic material and ensures that the sensor maintains a normal and stable working state after being disturbed by a strong magnetic field. The ability of the sensor to resist strong magnetic field interference can be improved, and the working efficiency and application range of the device can be improved.
通过铁磁/反铁磁耦合的方式解决磁阻条在强磁场干扰后磁化状态不稳定的问题。相较传统的AMR传感器设计，铁磁/反铁磁耦合的方法可以有效提升铁磁材料磁化状态的稳定性，增加AMR传感器的应用范围。The ferromagnetic/antiferromagnetic coupling method is used to solve the problem of unstable magnetization state of the magnetoresistive strip after strong magnetic field interference. Compared with the traditional AMR sensor design, the ferromagnetic/antiferromagnetic coupling method can effectively improve the stability of the magnetization state of ferromagnetic materials and increase the application range of AMR sensors.
附图说明Description of drawings
图1示意了AMR传感器结构。Figure 1 illustrates the AMR sensor structure.
图2示意了AMR传感器的磁阻功能层材料组成。Figure 2 schematically shows the material composition of the magnetoresistive functional layer of the AMR sensor.
图3示意了AMR传感器的制造流程。Figure 3 illustrates the fabrication process of the AMR sensor.
图4示意了AMR传感器磁阻材料层磁滞回线性能，表明在磁场为0时，传感器磁阻层有钉扎定向的磁化取向。Fig. 4 schematically shows the performance of the hysteresis loop of the magnetoresistive material layer of the AMR sensor, indicating that when the magnetic field is 0, the magnetoresistance layer of the sensor has a magnetization orientation of pinning orientation.
图5示意了AMR传感器在强磁场干扰前后的实际测试结果，包括(a)强磁场对于AMR传感器线性工作区域输出电压的影响，(b)强磁场干扰前后，具有固定大小、频率的外界磁场测试时的示波器检测到的输出电压。Figure 5 shows the actual test results of the AMR sensor before and after strong magnetic field interference, including (a) the influence of strong magnetic field on the output voltage of the linear working area of the AMR sensor, (b) the external magnetic field test with fixed size and frequency before and after strong magnetic field interference When the oscilloscope detects the output voltage.
图中：1-第一导电材料，2-第二导电材料，3-磁阻条，4-偏置磁场。In the figure: 1-first conductive material, 2-second conductive material, 3-magnetic resistance strip, 4-bias magnetic field.
具体实施方式Detailed ways
以下结合附图对本发明进一步说明：The present invention is further described below in conjunction with accompanying drawing:
请参阅图1至图3，一种抗强磁场干扰的AMR传感器，包括第一导电材料1、第二导电材料2和磁阻条3；四个第一导电材料1成四宫格状分布，若干磁阻条3平行等间距设置，相邻的两个磁阻条3之间的端部通过第二导电材料2连接，使若干磁阻条3形成S型串联结构；相邻的第一导电材料1之间均设置有S型串联结构，形成惠斯通电桥，S型串联结构端部的磁阻条3与第一导电材料1连接；每个S型串联结构均与四宫格的中线成45度夹角；第一导电材料1和第二导电材料2均为导电金属。Please refer to Figures 1 to 3, an AMR sensor resistant to strong magnetic field interference, including a first conductive material 1, a second conductive material 2 and a magnetoresistive strip 3; four first conductive materials 1 are distributed in a four-square grid, Several magnetoresistive strips 3 are arranged in parallel at equal intervals, and the ends between two adjacent magnetoresistive strips 3 are connected by the second conductive material 2, so that several magnetoresistive strips 3 form an S-type series structure; the adjacent first conductive An S-type series structure is arranged between the materials 1 to form a Wheatstone bridge, and the magnetic resistance strip 3 at the end of the S-type series structure is connected to the first conductive material 1; each S-type series structure is connected to the center line of the four-square grid form an included angle of 45 degrees; both the first conductive material 1 and the second conductive material 2 are conductive metals.
磁阻条3为三明治结构，包括底层缓冲层、中间层和上层保护层；底层缓冲层材料为Ta，厚度为5nm，上层保护层材料为Ta，厚度为5nm，中间层包括铁磁层和反铁磁层，铁磁层为NiFe或NiCo，厚度为10nm-200nm；反铁磁层为NiO或IrMn，厚度为10nm-500nm。The magnetoresistive strip 3 is a sandwich structure, including a bottom buffer layer, a middle layer and an upper protective layer; the material of the bottom buffer layer is Ta with a thickness of 5nm, the material of the upper protective layer is Ta with a thickness of 5nm, and the middle layer includes a ferromagnetic layer and a reflective layer. The ferromagnetic layer is NiFe or NiCo with a thickness of 10nm-200nm; the antiferromagnetic layer is NiO or IrMn with a thickness of 10nm-500nm.
一种抗强磁场干扰的AMR传感器的制备方法，包括以下步骤：A preparation method of an AMR sensor resistant to strong magnetic field interference, comprising the following steps:
步骤1，提供一个Si基底，并对Si基底进行预处理；Step 1, provide a Si substrate, and carry out pretreatment to Si substrate;
步骤2，在Si基底上滴加光刻胶后，使得光刻胶覆盖Si片；Step 2, after dropping the photoresist on the Si substrate, the photoresist covers the Si sheet;
步骤3，将旋涂光刻胶的Si基底放入烘箱内，使得光刻胶完全固化；Step 3, put the Si substrate with spin-coated photoresist in an oven, so that the photoresist is completely cured;
步骤4，经过第一预定义图形的掩膜版对第一光刻胶层进行紫外线曝光，显影，去除多余的光刻胶，在Si基底上留下第一预定义图形；Step 4, exposing the first photoresist layer to ultraviolet rays through the mask plate of the first predefined pattern, developing, removing excess photoresist, and leaving the first predefined pattern on the Si substrate;
步骤5，利用磁控溅射薄膜生长技术，在处理好的基底上生长第一、第二导电材料，第一、第二导电材料薄膜层厚度为50-100nm，第一、第二导电材料包括Ta或Au；Step 5, using magnetron sputtering thin film growth technology, grow the first and second conductive materials on the processed substrate, the thickness of the first and second conductive material film layers is 50-100nm, the first and second conductive materials include Ta or Au;
步骤6，去除第一层光刻胶，在生长有第一、第二导电材料的Si基底上滴加光刻胶后，使得光刻胶覆盖；Step 6, remove the first layer of photoresist, and drop photoresist on the Si substrate with the first and second conductive materials, so that the photoresist is covered;
步骤7，将旋涂光刻胶的Si基底放入烘箱内，使得光刻胶完全固化；Step 7, put the Si substrate with spin-coated photoresist in an oven, so that the photoresist is completely cured;
步骤8，经过第二预定义图形的掩膜版对第二光刻胶层进行紫外线曝光，显影，去除多余的光刻胶，在Si基底上留下第二预定义图形；Step 8, exposing the second photoresist layer to ultraviolet light through the mask plate of the second predefined pattern, developing, removing excess photoresist, and leaving the second predefined pattern on the Si substrate;
步骤9，利用磁控溅射薄膜生长技术，在处理好的基底上生长磁阻材料层，然后去除第二层光刻胶。Step 9, using the magnetron sputtering film growth technology to grow a magnetoresistive material layer on the processed substrate, and then remove the second layer of photoresist.
步骤1中预处理包括：依次利用丙酮、酒精和去离子水分别超声清洗5min，之后用N2吹干，在烘箱内保持115℃烘20min。The pretreatment in step 1 includes: sequentially using acetone, alcohol and deionized water to ultrasonically clean for 5 minutes respectively, then blow dry with N 2 , and bake in an oven at 115°C for 20 minutes.
步骤2和步骤6中，采用光刻胶的型号为APR-3510T，在Si基底上滴加光刻胶后，在匀胶机上先以600转速率旋转10s使得光刻胶覆盖Si片，再以4000转速率旋转40s使得光刻胶厚度均匀。In step 2 and step 6, the type of photoresist used is APR-3510T. After the photoresist is dropped on the Si substrate, the photoresist is first rotated at 600 rpm for 10s so that the photoresist covers the Si sheet, and then Rotate at 4000 rpm for 40s to make the thickness of the photoresist uniform.
步骤3和步骤7中，烘箱内以115℃加热20min。In steps 3 and 7, heat in an oven at 115°C for 20 minutes.
步骤9中，在薄膜生长过程中，对Si基底添加外部偏置磁场，偏置磁场方向与磁阻条夹角成45°，偏置磁场方向为水平横向。In step 9, during the film growth process, an external bias magnetic field is added to the Si substrate, the direction of the bias magnetic field is at an angle of 45° to the magnetoresistive strip, and the direction of the bias magnetic field is horizontal and transverse.
在薄膜生长过程中，对Si基底添加外部偏置磁场4，偏置磁场4方向与磁阻条3夹角成45°，如图1所示，偏置磁场4方向为水平横向。此处NiFe薄膜厚度可以改变，同时也可以是其他磁性材料，NiO薄膜厚度也可以改变，也可以是其他反铁磁材料，磁阻条3的数量与尺寸也可以改变。导电金属1、2与磁阻条3组成惠斯通电桥。During the film growth process, an external bias magnetic field 4 is added to the Si substrate, and the direction of the bias magnetic field 4 is at an angle of 45° to the magnetoresistive strip 3. As shown in FIG. 1 , the direction of the bias magnetic field 4 is horizontal and transverse. Here, the thickness of the NiFe film can be changed, and it can also be other magnetic materials. The thickness of the NiO film can also be changed, or it can be other antiferromagnetic materials. The number and size of the magnetoresistive strips 3 can also be changed. The conductive metals 1, 2 and the magnetic resistance strip 3 form a Wheatstone bridge.
相关实验测试如图4和图5所示，图4展示了铁磁/反铁磁材料耦合效果：测试结果表明在外界磁场为0时，磁阻层表现由于钉扎效果表现出稳定的磁畴取向。同时，当磁场方向沿难轴方向时，磁阻层表现出良好的线性的及线性区间，可以实现抗强磁场干扰的功能。图5展示了抗强磁场磁场传感器的具体测试结果：图5(a)展示了1.5T强磁场干扰前后，传感器对频率为2Hz，场强连续变化的外界磁场探测结果。图5(a)展示了1.5T强磁场干扰前后，传感器对频率为2Hz，大小为15.5Oe的外界磁场探测波形输出。图5结果表明抗强磁场干扰磁场传感器在1.5T强磁场干扰后，可以稳定工作，无需手动恢复。相对于目前商业AMR磁场传感器，当外加磁场超过约5Oe时，无法主动恢复正常工作状态，需要人工设置使其恢复正常工作状态。Relevant experimental tests are shown in Figure 4 and Figure 5. Figure 4 shows the coupling effect of ferromagnetic/antiferromagnetic materials: the test results show that when the external magnetic field is 0, the magnetoresistive layer exhibits stable magnetic domains due to the pinning effect orientation. At the same time, when the direction of the magnetic field is along the hard axis, the magnetoresistive layer exhibits good linearity and a linear range, and can realize the function of resisting strong magnetic field interference. Figure 5 shows the specific test results of the anti-strong magnetic field sensor: Figure 5(a) shows the detection results of the external magnetic field with a frequency of 2 Hz and a continuously changing field strength by the sensor before and after 1.5T strong magnetic field interference. Figure 5(a) shows the output of the external magnetic field detection waveform of the sensor with a frequency of 2Hz and a magnitude of 15.5Oe before and after 1.5T strong magnetic field interference. The results in Figure 5 show that the anti-strong magnetic field interference magnetic field sensor can work stably after a 1.5T strong magnetic field interference without manual recovery. Compared with the current commercial AMR magnetic field sensor, when the external magnetic field exceeds about 5Oe, it cannot actively return to the normal working state, and manual settings are required to restore the normal working state.
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