[go: up one dir, main page]

CN110520553A - 基板-载体结构 - Google Patents

基板-载体结构 Download PDF

Info

Publication number
CN110520553A
CN110520553A CN201880014112.9A CN201880014112A CN110520553A CN 110520553 A CN110520553 A CN 110520553A CN 201880014112 A CN201880014112 A CN 201880014112A CN 110520553 A CN110520553 A CN 110520553A
Authority
CN
China
Prior art keywords
substrate
carrier structure
carrier
groove
structure according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201880014112.9A
Other languages
English (en)
Inventor
沙恩·布劳恩
乔纳森·孔茨
乔舒亚·奥曼
约瑟夫·温德尔
奥斯汀·默尼
汤姆·格茨
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SGL Carbon SE
Original Assignee
SGL Carbon SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SGL Carbon SE filed Critical SGL Carbon SE
Publication of CN110520553A publication Critical patent/CN110520553A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C23C14/505—Substrate holders for rotation of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4581—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber characterised by material of construction or surface finish of the means for supporting the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明涉及一种基板‑载体结构及其在纳米级工艺(例如沉积和/或生长工艺)中的使用，其中基板可以是晶片。载体结构(1)包括在其前侧和/或背侧的沟槽(2，3)。

Description

基板-载体结构
本发明涉及一种新型基板-载体结构及其在纳米级工艺(例如沉积和/或生长工艺)中的应用，其中所述基板可以是晶片。
随着行业趋向于器件小型化，工艺一致性成为影响最终收率的关键因素。在半导体、太阳能、外延生长和LED制造等行业中观察到这些趋势。为了制造上述的纳米级结构，这些行业使用一些沉积和生长技术，包括CVD(化学气相沉积)、VPE(气相外延)和PVD(物理气相沉积)。具体地，通过这些技术制造的薄膜可以具有包括单晶、多晶和/或无定形相的结构。在每种工艺技术中，都需要基板-载体结构。
这些基板-载体结构中许多包含载体结构，该载体结构包含至少一个袋(pocket)，其在物理上支撑晶片基板以在生长/沉积工艺期间提供散热和热传递(W·S·里斯，非金属的CVD，Wiley-VCH，Weinheim，1996；A·C·琼斯，P·奥布莱恩，化合物半导体的CVD，VCH，Weinheim，1997)。袋底部的轮廓可有助于在晶片基板表面上的热传递的一致性。该晶片的温度是影响上述沉积和生长工艺中膜性能的主要因素之一。US2013/0319319描述了一种基板-载体结构，其中载体结构包含放置在载体结构的背侧上的袋，并且其中该袋具有两段结构，即上段部分和下段部分。通过使用这种两段结构的袋，改善了在晶片基板边缘处的热传递，然而在晶片基板表面上的热传递是不均匀的。
热传递的均匀性影响上述沉积和生长工艺中的膜性能。通过在晶片基板表面上具有不均匀的热传递，沉积膜的厚度可能不相等，导致沉积层的收率不足。
因此，本发明的目的是提供一种改进的基板-载体结构，在生长/沉积工艺期间其增加了基板(可以是晶片)上沉积的层的均匀性和收率。
该目的通过一种基板-载体结构来实现，其中载体结构的背侧和/或前侧，优选地背侧，包含至少一个沟槽。
影响在基板表面上热传递均匀性的一个因素是整个载体结构的机械支撑/稳定性。通过在载体结构中具有至少一个沟槽，对载体结构的表面给予机械支撑；特别是，防止了垂直于所述表面的载体基板的机械变形。与没有沟槽的现有技术的基板-载体相比，这种载体结构具有减少的形状。该沟槽/这些沟槽减小了载体结构的平坦性变化，其中载体结构的设计可以优选地适配于在相应的生长/沉积工艺中所使用的气体递送系统和加热元件。载体上所述至少一个沟槽的布置可以是径向的或同心的，或者它可以是径向和同心布置的组合。在本发明的情况中，径向沟槽定义为从基板-载体结构边缘延伸到中心的沟槽，并且同心沟槽示出为在周长附近没有中断。同心沟槽防止在基板-载体结构周长附近的高度波动。这意味着圆形沟槽确保了载体形状更加均匀并且不是鞍形的(鞍形在一条轴线上比另一条轴线上更高)。这具有进一步的优点，即在生长工艺中使用基板-载体结构期间，涂覆的基板均等地得到加热和涂覆，这使得涂覆产品的品质更高。所述沟槽的数量不限，然而，在径向沟槽的情况下，其数量优选在1至18的范围内，优选地在2至16的范围内，更优选地在2至14的范围内，并且在同心沟槽的情况下，其数量优选在1至6的范围内，更优选地在2至6的范围内。如果径向和同心沟槽组合使用，前面所提到的沟槽数量是有效的。
所述沟槽的横截面设计可以是角形(V形)、矩形或圆形。如果存在多于一个沟槽，则每个沟槽的横截面设计可以是相同的，或者它可以是所提到的横截面设计的任意组合。
所述沟槽的深度不大于基板-载体总厚度的90％，即这些沟槽不代表通孔。超过基板-载体结构总厚度的90％的深度，则基板-载体结构变得脆弱，并且在低于基板-载体结构总厚度的1％的深度，可能看不到沟槽的效果。所述沟槽的宽度对深度之比小于10。如果选择沟槽的径向设计，则每个沟槽的长度优选小于载体结构的半径，通常小于载体半径的95％。然而，该长度也可以延伸穿过载体中心或延伸到载体边缘。
应当理解的是，所述沟槽的横截面设计、深度和纵横比取决于所使用的沉积和/或生长工艺条件，即取决于由该工艺制造的产品的所期望的性能。
本发明的载体结构还包含至少一个袋，该袋是载体结构前侧的一部分。
在基板表面的热传递的均匀性还受到基板与载体的接触表面以及基板与袋表面之间的间距的影响。
袋底部轮廓应该设计成在晶片基板的表面上提供一致的热传递。对于包含多个袋的基板-载体结构，这种均匀性必须落实到所有袋。每个袋的尺寸受整个载体形状的影响而与给定的基板-载体结构上的袋的数量无关，整个载体形状受沟槽的影响。该形状定义为基板-载体周向和径向上的物理挠曲。不能提供一致的基板-载体结构形状/平坦性将最终导致袋结构的变化性，并且因此导致在生长/沉积工艺期间基板上沉积的层的差的工艺均匀性及收率。
所述袋的轮廓可以是平的、凹的或凸的或其任意组合。载体更均匀的形状导致更低的废品率，这是由于在生长工艺期间基板(晶片)上沉积的层更高的均匀性增加了，因为袋的平坦性和形状支持均匀的温度分布。
袋的数量取决于载体结构的尺寸和最终产品的所期望的性能。有利地，袋的直径为25-500mm，优选为45-455mm，更优选为45-305mm。
所述载体由从以下组成的组中选择的材料制成：石墨、碳化硅、涂覆有碳化硅的石墨、或涂覆有碳化硅的碳纤维增强碳(CFRC)、或其任意混合物。
本发明的基板-载体结构可用于外延、多晶或无定形生长制造工艺，如CVD(化学气相沉积)、VPE(气相外延)和PVD(物理气相沉积)。
在下文中，参考有利的实施方式并参考附图纯粹通过示例来描述本发明。
实施例
实施例1
根据该实施例，石墨载体包含至少3个径向沟槽，其从载体的中心附近延伸到边缘附近。这些径向沟槽(优选对称地布置)沿着载体半径提供刚性以减轻挠曲，否则该挠曲会导致载体变得凸起或凹陷。这种载体挠曲变化性的减小使得袋底部轮廓更加一致，从而提供有针对性的晶片到载体的间距，以增强晶片内的均匀性以及随后的收率。
如果使用具有例如12条径向沟槽的例如150mm基座(susceptors)，则可以获得具有大约0.002英寸的袋轮廓，而如果不使用沟槽，则仅可以获得大约0.004英寸的袋轮廓。
统计 不带沟槽的晶片基座 带沟槽的晶片基座
N 320 190
均值 0.0041513(英寸) 0.0023538(英寸)
标准偏差 0.0010562(英寸) 0.0010108(英寸)
最小值 0.0013296(英寸) 0.000312(英寸)
最大值 0.0062436(英寸) 0.0045615(英寸)
N＝晶片基座的数量
实施例2
根据该实施例，石墨载体包含至少一个圆形沟槽，优选地为与载体同心的三个圆形沟槽。该圆形特征用于增加在圆周附近的载体的刚性以减轻挠曲，否则该挠曲会导致载体弯曲或翘曲。这提供了均匀平坦的载体边缘，有两个主要目的；由于载体形状缺乏变化性，袋底部轮廓将更加一致。而且，载体和反应器部件之间的间距将更加一致。这些部件可包括热源、气体递送系统或计量设备，其中间距对于操作是至关重要的。载体和部件之间的间距的一致性将提供更均匀的沉积或生长参数(温度、浓度、压力、流速等)。此外，同心的沟槽确保了载体的袋是平坦的而不是凸起的，从而使得基板均等地得到加热和涂覆。
实施例3
根据该实施例，石墨载体包含至少1个圆形沟槽和至少3个径向沟槽。径向沟槽沿着基板-载体结构半径提供刚性以减轻挠曲，否则该挠曲导致基板-载体结构变得凸起或凹陷。同时，圆形沟槽用于增加在圆周附近的载体的刚性以减轻挠曲，否则该挠曲会导致载体弯曲或翘曲。结果，由于基板-载体结构形状缺乏变化性，袋底部轮廓将更加一致。基板-载体结构挠曲变化性的这种减小导致更一致的袋底部轮廓。这进一步使得晶片-基板上沉积/生长的层更加均匀，因为基板-载体结构和基板-晶片之间的间距得到优化并且温度分布得到改善。这具有进一步的优点在于，在生长工艺中使用基底载体结构期间，涂覆的基板均等地得到加热和涂覆，这使得涂覆产品的品质更高。此外，载体和反应器部件之间的间距更加一致。这些部件可包括热源、气体递送系统或计量设备，其中间距对于操作是至关重要的。载体和部件之间的间距的一致性提供了更均匀的沉积或生长参数(即温度、浓度、压力、流速)。
附图：
图1示出了仅具有圆形沟槽的载体的顶视图；
图2示出了仅具有径向沟槽的载体的顶视图；
图3示出了具有径向和圆形沟槽的载体的顶视图。
附图标记
1 基板-载体结构
2 径向沟槽
3 圆形沟槽
4 基板-载体结构的中心
5 基板-载体结构的边缘

Claims (10)

1.基板-载体结构，其中载体结构的背侧和/或前侧包含至少一个沟槽。
2.根据权利要求1所述的基板-载体结构，其中所述至少一个沟槽径向和/或同心地布置。
3.根据权利要求1或2所述的基板-载体结构，其中当在横截面中观察时，所述至少一个沟槽具有角形、矩形或圆形的设计。
4.根据权利要求1所述的基板-载体结构，其中所述至少一个沟槽具有的深度在基板-载体结构总厚度的1％至90％的范围内。
5.根据权利要求1所述的基板-载体结构，其中所述至少一个沟槽的宽度对深度之比小于10。
6.根据权利要求1所述的基板-载体结构，其中载体结构的前侧还包含至少一个袋。
7.根据权利要求6所述的基板-载体结构，其中所述至少一个袋具有平坦的、凹陷的或凸起的轮廓。
8.根据权利要求6所述的基板-载体结构，其中所述至少一个袋具有的直径为25至500mm。
9.根据权利要求1所述的基板-载体结构，其中所述载体由从以下组成的组中选择的材料制成：石墨、碳化硅、涂覆有碳化硅的石墨、或涂覆有碳化硅的碳纤维增强碳(CFRC)、或其任意混合物。
10.根据权利要求1或2的基板-载体结构用于外延、多晶或无定形生长制造工艺中的应用。
CN201880014112.9A 2017-02-28 2018-02-28 基板-载体结构 Pending CN110520553A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201762464551P 2017-02-28 2017-02-28
US62/464,551 2017-02-28
PCT/EP2018/054988 WO2018158348A1 (en) 2017-02-28 2018-02-28 Substrate-carrier structure

Publications (1)

Publication Number Publication Date
CN110520553A true CN110520553A (zh) 2019-11-29

Family

ID=61563382

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201880014112.9A Pending CN110520553A (zh) 2017-02-28 2018-02-28 基板-载体结构

Country Status (6)

Country Link
US (1) US20200017965A1 (zh)
EP (1) EP3589774A1 (zh)
JP (1) JP7077331B2 (zh)
KR (1) KR20190122230A (zh)
CN (1) CN110520553A (zh)
WO (1) WO2018158348A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111118599A (zh) * 2019-12-27 2020-05-08 季华实验室 一种用于碳化硅外延生长设备载盘的涂层制备方法

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0700078A1 (en) * 1994-09-01 1996-03-06 Applied Materials, Inc. Support members for semiconductor wafers in a processing environment
US5683759A (en) * 1994-11-01 1997-11-04 Celestech, Inc. Method for depositing a substance with temperature control
US5753132A (en) * 1994-01-31 1998-05-19 Applied Materials, Inc. Method of making electrostatic chuck with conformal insulator film
JP2003338462A (ja) * 2002-05-21 2003-11-28 Nippon Sanso Corp 化合物半導体製造用基板ホルダー
US20050022746A1 (en) * 2003-08-01 2005-02-03 Sgl Carbon, Llc Holder for supporting wafers during semiconductor manufacture
US20070254101A1 (en) * 2004-08-25 2007-11-01 Tokyo Electron Limited Film Forming Equipment and Film Forming Method
US20100282170A1 (en) * 2007-12-06 2010-11-11 Tsuyoshi Nishizawa Vapor phase growth susceptor and vapor phase growth apparatus
CN102144280A (zh) * 2008-08-29 2011-08-03 威科仪器有限公司 具有变化热阻的晶片载体
US20110265722A1 (en) * 2009-12-21 2011-11-03 Showa Denko K.K. Wafer tray for cvd device, heating unit for cvd device and cvd device
CN105632984A (zh) * 2014-11-24 2016-06-01 中微半导体设备(上海)有限公司 一种晶圆载盘

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69813014T2 (de) * 1997-11-03 2004-02-12 Asm America Inc., Phoenix Verbesserte kleinmassige waferhaleeinrichtung
JP2002057209A (ja) * 2000-06-01 2002-02-22 Tokyo Electron Ltd 枚葉式処理装置および枚葉式処理方法
US7033445B2 (en) * 2001-12-27 2006-04-25 Asm America, Inc. Gridded susceptor
ITMI20020306A1 (it) * 2002-02-15 2003-08-18 Lpe Spa Suscettore dotato di rientranze e reattore epitassiale che utilizza lo stesso
JP5284153B2 (ja) * 2008-03-21 2013-09-11 日本碍子株式会社 セラミックスヒータ
JP5477314B2 (ja) 2011-03-04 2014-04-23 信越半導体株式会社 サセプタ及びこれを用いたエピタキシャルウェーハの製造方法
US9633889B2 (en) * 2013-03-06 2017-04-25 Applied Materials, Inc. Substrate support with integrated vacuum and edge purge conduits
TWI734668B (zh) * 2014-06-23 2021-08-01 美商應用材料股份有限公司 在ｅｐｉ腔室中的基材熱控制
US20170175265A1 (en) * 2015-12-18 2017-06-22 Applied Materials, Inc. Flat susceptor with grooves for minimizing temperature profile across a substrate
US11961756B2 (en) * 2019-01-17 2024-04-16 Asm Ip Holding B.V. Vented susceptor

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5753132A (en) * 1994-01-31 1998-05-19 Applied Materials, Inc. Method of making electrostatic chuck with conformal insulator film
EP0700078A1 (en) * 1994-09-01 1996-03-06 Applied Materials, Inc. Support members for semiconductor wafers in a processing environment
US5683759A (en) * 1994-11-01 1997-11-04 Celestech, Inc. Method for depositing a substance with temperature control
JP2003338462A (ja) * 2002-05-21 2003-11-28 Nippon Sanso Corp 化合物半導体製造用基板ホルダー
US20050022746A1 (en) * 2003-08-01 2005-02-03 Sgl Carbon, Llc Holder for supporting wafers during semiconductor manufacture
US20070254101A1 (en) * 2004-08-25 2007-11-01 Tokyo Electron Limited Film Forming Equipment and Film Forming Method
US20100282170A1 (en) * 2007-12-06 2010-11-11 Tsuyoshi Nishizawa Vapor phase growth susceptor and vapor phase growth apparatus
CN102144280A (zh) * 2008-08-29 2011-08-03 威科仪器有限公司 具有变化热阻的晶片载体
US20110265722A1 (en) * 2009-12-21 2011-11-03 Showa Denko K.K. Wafer tray for cvd device, heating unit for cvd device and cvd device
CN105632984A (zh) * 2014-11-24 2016-06-01 中微半导体设备(上海)有限公司 一种晶圆载盘

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111118599A (zh) * 2019-12-27 2020-05-08 季华实验室 一种用于碳化硅外延生长设备载盘的涂层制备方法

Also Published As

Publication number Publication date
US20200017965A1 (en) 2020-01-16
JP2020509984A (ja) 2020-04-02
EP3589774A1 (en) 2020-01-08
KR20190122230A (ko) 2019-10-29
WO2018158348A1 (en) 2018-09-07
JP7077331B2 (ja) 2022-05-30

Similar Documents

Publication Publication Date Title
JP5748699B2 (ja) 材料層を堆積するための装置および方法
KR101496572B1 (ko) 에피택셜 성장용 서셉터 및 에피택셜 성장방법
US9017483B2 (en) Susceptor for vapor phase epitaxial growth device
US11380621B2 (en) Susceptor for holding a semiconductor wafer having an orientation notch, a method for depositing a layer on a semiconductor wafer, and semiconductor wafer
JPWO2018207942A1 (ja) サセプタ、エピタキシャル基板の製造方法、及びエピタキシャル基板
TW201913873A (zh) 晶座、磊晶成長裝置、磊晶矽晶圓的製造方法以及磊晶矽晶圓
CN110520553A (zh) 基板-载体结构
EP3863043A1 (en) Susceptor
KR102578550B1 (ko) 반도체 제조장치용 부품 및 그의 제조방법
JP3968777B2 (ja) 気相成長装置及び気相成長方法
US9991344B2 (en) Silicon carbide EPI wafer and method for manufacturing same
JP7613829B2 (ja) 炭素複合部材
US20230026485A1 (en) Diamond Structures For Tooling
US20150144963A1 (en) Silicon carbide epi-wafer and method of fabricating the same
US20150013608A1 (en) Ceramic heater
KR102209032B1 (ko) 웨이퍼 캐리어
US20150047559A1 (en) Susceptor and wafer holder
JP2021031336A (ja) ＳｉＣ化学気相成長装置
JP6233209B2 (ja) サセプターとその製造方法
JP2013001999A (ja) 化学蒸着装置
JP7628868B2 (ja) サセプタ
JP2019526525A (ja) ＳｉＣ素材及びＳｉＣ複合素材
CN207130366U (zh) 一种具有限位圆盘的外延炉小盘基座
WO2025026762A2 (en) Epitaxy apparatus
CN110277304A (zh) 外延晶片的制造方法及其制造装置

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20191129

RJ01 Rejection of invention patent application after publication