[go: up one dir, main page]

CN110494724B - 集成数字力传感器和相关制造方法 - Google Patents

集成数字力传感器和相关制造方法 Download PDF

Info

Publication number
CN110494724B
CN110494724B CN201880023913.1A CN201880023913A CN110494724B CN 110494724 B CN110494724 B CN 110494724B CN 201880023913 A CN201880023913 A CN 201880023913A CN 110494724 B CN110494724 B CN 110494724B
Authority
CN
China
Prior art keywords
mems switch
force
mems
sensing element
digital
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201880023913.1A
Other languages
English (en)
Other versions
CN110494724A (zh
Inventor
A·富吉
R·戴斯特儿霍斯特
D·本杰明
J·M·蔡
M·杜威可
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nextinput Inc
Original Assignee
Nextinput Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nextinput Inc filed Critical Nextinput Inc
Priority to CN202310861847.8A priority Critical patent/CN116907693A/zh
Publication of CN110494724A publication Critical patent/CN110494724A/zh
Application granted granted Critical
Publication of CN110494724B publication Critical patent/CN110494724B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
    • B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00222—Integrating an electronic processing unit with a micromechanical structure
    • B81C1/00246—Monolithic integration, i.e. micromechanical structure and electronic processing unit are integrated on the same substrate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/14—Measuring force or stress, in general by measuring variations in capacitance or inductance of electrical elements, e.g. by measuring variations of frequency of electrical oscillators
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/20—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress
    • G01L1/22—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges
    • G01L1/2287—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges
    • G01L1/2293—Measuring force or stress, in general by measuring variations in ohmic resistance of solid materials or of electrically-conductive fluids; by making use of electrokinetic cells, i.e. liquid-containing cells wherein an electrical potential is produced or varied upon the application of stress using resistance strain gauges constructional details of the strain gauges of the semi-conductor type
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N39/00—Integrated devices, or assemblies of multiple devices, comprising at least one piezoelectric, electrostrictive or magnetostrictive element covered by groups H10N30/00 – H10N35/00
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/02—Sensors
    • B81B2201/0264—Pressure sensors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/01—Suspended structures, i.e. structures allowing a movement
    • B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2203/00—Basic microelectromechanical structures
    • B81B2203/03—Static structures
    • B81B2203/0315—Cavities
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/01—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS
    • B81B2207/015—Microstructural systems or auxiliary parts thereof comprising a micromechanical device connected to control or processing electronics, i.e. Smart-MEMS the micromechanical device and the control or processing electronics being integrated on the same substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2207/00—Microstructural systems or auxiliary parts thereof
    • B81B2207/07—Interconnects
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2201/00—Manufacture or treatment of microstructural devices or systems
    • B81C2201/01—Manufacture or treatment of microstructural devices or systems in or on a substrate
    • B81C2201/0101—Shaping material; Structuring the bulk substrate or layers on the substrate; Film patterning
    • B81C2201/0128—Processes for removing material
    • B81C2201/013—Etching
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/01—Packaging MEMS
    • B81C2203/0109—Bonding an individual cap on the substrate
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0714—Forming the micromechanical structure with a CMOS process
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/07—Integrating an electronic processing unit with a micromechanical structure
    • B81C2203/0707—Monolithic integration, i.e. the electronic processing unit is formed on or in the same substrate as the micromechanical structure
    • B81C2203/0728—Pre-CMOS, i.e. forming the micromechanical structure before the CMOS circuit

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Micromachines (AREA)

Abstract

本文描述了一种加固型晶片级微机电(“MEMS”)力传感器，其包括基部和盖。MEMS力传感器包括柔性膜和感测元件。感测元件电连接到设置在与感测元件相同的衬底上的集成互补金属氧化物半导体(“CMOS”)电路。CMOS电路可被配置成通过电端子将力值放大、数字化、校准、存储和/或传送到外部电路。

Description

集成数字力传感器和相关制造方法
相关申请的交叉引用
本申请要求2017年2月9日提交的名称为“集成数字力传感器(INTEGRATEDDIGITAL FORCE SENSOR)”的美国临时专利申请第62/456,699号和2017年3月9日提交的名称为“固态机械开关(SOLID STATE MECHANICAL SWITCH)”的美国临时专利申请第62/469,094号的权益，所述临时专利申请的公开内容以全文引用的方式明确并入本文中。
技术领域
本公开涉及微机电(“MEMS”)力感测管芯、MEMS开关和相关制造方法。MEMS力感测管芯和/或MEMS开关可用于将力转换成数字输出码。
背景技术
当前技术的MEMS力管芯基于将所施加的力链接到具有应变计的感测隔膜，所述应变计位于两个或更多个堆叠硅或玻璃管芯的表面上。引线键合焊盘围绕感测隔膜定位并且所得结构被封装，这使得装置相比更现代的芯片级封装传感器和电子器件相对较大。此外，当前MEMS力管芯产生模拟输出，所述模拟输出在转换为数字信号之前通常必须通过经常嘈杂的电气环境传送。
当前机电开关主要由变形以完成电路的导电穹顶结构组成。这些开关在其耐久性方面受到限制，原因是导电材料(通常是金属)会随时间推移而磨损。这些开关也不能被配置成用于多级致动，随着软件应用的复杂性增加并且需要来自用于控制它们的用户界面的更多通用性，因此更加期望开关能用于多级致动。
因此，在相关领域中需要一种小型低成本数字力传感器。
发明内容
本文描述了一种包括多个感测元件和定位在力传感器管芯的表面上的数字电路的MEMS力传感器。每个感测元件可以包括弯曲部和感测元件(例如，压阻式应变计)。在一种实施方式中，可以采用四个感测元件，但也可以使用更多或更少的感测元件。在标准互补金属氧化物半导体(“CMOS”)过程中MEMS的包括允许传感器将其模拟输出转换成数字码，并传输数字码，而不会由于电噪声而损失信号完整性。
本文中所描述的MEMS力传感器可通过将盖晶片(cap wafer)结合到具有感测元件(例如，压阻式应变计)和CMOS功率、处理和通信电路两者的基础晶片(例如，力传感器管芯)来制造。可以通过在基础晶片的顶侧上蚀刻弯曲部来形成感测元件。基础晶片与盖晶片之间的结合可以包括由在基础晶片顶部上和/或盖晶片底部上雕刻的突起产生的间隙。间隙可被设计成限制盖晶片的位移，以便为MEMS力传感器提供力过载保护。基础晶片的突起和外壁在施加力时偏转，使感测元件发生应变，并产生模拟输出信号。模拟输出信号可以被数字化并存储在CMOS电路的片上寄存器中，直到主机装置请求。
本文还描述了一种晶片级MEMS机械开关，其包括基部和盖。机械开关采用至少一个感测元件。所述至少一个感测元件电连接到相同衬底上的集成CMOS电路。CMOS电路可放大、数字化和校准力值，所述力值与可编程力阈值进行比较以调制数字输出。
本文还描述了一种包括定位在开关管芯的表面上的多个感测元件的MEMS开关。在一种实施方式中，可以采用四个感测元件，但也可以使用更多或更少的感测元件。感测元件可以使其模拟输出数字化并且与多个编程的力水平比较，从而输出数字码以指示开关的当前状态。
MEMS开关可被制成紧凑式的以仅需要少数输入/输出(“I/O”)端子。装置的输出可被配置成指示2N个输入力水平，其中N是输出端子的数量，其可由用户编程。此外，装置的响应可以选择性地被过滤，使得仅测量动态力。所得装置是一个完全可配置的多级动态数字开关。
本文中描述了示例性MEMS力传感器。MEMS力传感器可包括被配置成接收所施加力的传感器管芯。传感器管芯具有顶表面和与其相对的底表面。MEMS力传感器还可包括布置在传感器管芯的底表面上的感测元件和数字电路。感测元件可以被配置成将传感器管芯的底表面上的应变转换成与应变成比例的模拟电信号。另外，数字电路可以被配置成将模拟电信号转换成数字电输出信号。
另外，感测元件可以是压阻式、压电式或电容式换能器。
替代地或另外，MEMS力传感器还可包括布置在传感器管芯的底表面上的多个电端子。由数字电路产生的数字电输出信号可以被传送到电端子。例如，所述电端子可以是焊料凸块或铜柱。
替代地或者另外，MEMS力传感器可还包括附接到传感器管芯的盖。盖可在由传感器管芯的外壁限定的表面处结合到传感器管芯。另外，密封腔可形成于盖与传感器管芯之间。
替代地或者另外，传感器管芯可包括形成于其中的弯曲部。弯曲部可将所施加的力转换成传感器管芯的底表面上的应变。任选地，弯曲部可通过蚀刻形成于传感器管芯中。感测元件布置在弯曲部上。
替代地或者另外，间隙可布置在传感器管芯与盖之间。间隙可以被配置成在施加所施加的力时变窄，使得弯曲部不能变形超过其断裂点。
替代地或者另外，数字电路还可以被配置成基于多个预定力阈值提供数字输出码。
本文中描述了用于制造MEMS力传感器的示例性方法。所述方法可包括在力传感器管芯的表面上形成至少一个感测元件，并在力传感器管芯的表面上形成互补金属氧化物半导体(“CMOS”)电路。至少一个感测元件可以配置有与下游CMOS过程兼容的特性。
替代地或者另外，至少一个感测元件可以在形成CMOS电路之前形成。
替代地或者另外，所述特性可以是至少一个感测元件的热退火分布。
替代地或者另外，所述方法还可包括蚀刻力传感器管芯的相对表面以形成过载间隙，蚀刻力传感器管芯的相对表面以形成沟道，以及将盖晶片结合到力传感器管芯的相对表面以密封盖晶片与力传感器管芯之间的腔。腔可由沟道限定。
替代地或者另外，所述方法还可包括在力传感器管芯的相对表面上形成多个电端子。
替代地或者另外，力传感器管芯可以由p型或n型硅制成。
替代地或者另外，可以使用注入过程或沉积过程形成至少一个感测元件。
替代地或者另外，CMOS电路可以被配置成对由至少一个感测元件产生的模拟电输出信号进行放大和数字化。
替代地或者另外，沟道可以被构造成当力施加到MEMS力传感器时增加至少一个感测元件上的应变。
替代地或者另外，过载间隙的深度可被配置成为MEMS力传感器提供过载保护。
替代地或者另外，电端子可以是焊料凸块或铜柱。
本文还描述了示例性MEMS开关。MEMS开关可包括被配置成接收所施加的力的传感器管芯。传感器管芯具有顶表面和与其相对的底表面。MEMS开关还可包括布置在传感器管芯的底表面上的感测元件和数字电路。感测元件可以被配置成将传感器管芯的底表面上的应变转换成与应变成比例的模拟电信号。另外，数字电路可以被配置成将模拟电信号转换成数字信号，并且基于多个预定力阈值提供数字输出码。
替代地或者另外，数字电路还可以被配置成将数字信号与预定力阈值进行比较。可选地，预定力阈值是相对于基线的。替代地或者另外，数字电路还可被配置成以预定频率更新基线。例如，可以通过将数字信号与自动校准阈值进行比较来更新基线。
在研究以下图式和详细描述时，其它系统、方法、特征和/或优点对于本领域技术人员而言将是或者可变得显而易见的。旨在将所有此类附加系统、方法、特征和/或优点都包括在本说明书内且受所附权利要求书的保护。
附图说明
附图中的部件不一定相对于彼此成比例。附图标记指示对应部分。在参考附图的详细描述中，这些和其它特征将变得更加明显。
图1是根据本文中所描述的实施方式的示例性MEMS力传感器的顶部的等距视图。
图2是图1的MEMS力传感器的俯视图。
图3是图1的MEMS力传感器的横截面视图。
图4是图1的MEMS力传感器的底部的等距视图。
图5是根据本文中所描述的实施方式使用压阻感测元件(不按比例)的集成p型MEMS-CMOS力传感器的示例性基础晶片的横截面视图。
图6是根据本文中所描述的实施方式使用压阻感测元件(不按比例)的集成n型MEMS-CMOS力传感器的示例性基础晶片的横截面图。
图7是根据本文中所描述的实施方式使用多晶硅感测元件(不按比例)的集成p型MEMS-CMOS力传感器的示例性基础晶片的横截面图。
图8是根据本文中所描述的实施方式使用压电感测元件(不按比例)的集成p型MEMS-CMOS力传感器的示例性基础晶片的横截面视图。
图9是根据本文中所描述的实施方式的示例性MEMS开关的顶部的等距视图。
图10是图9的MEMS开关的底部的等距视图。
图11是描述两位数字输出的输出的示例性真值表。
图12描绘了对示例性基线过程进行描述的流程图。
具体实施方式
通过参考以下详细描述、示例、图式及其之前和以下描述，可更容易地理解本公开。然而，在公开并描述本发明的装置、系统和/或方法之前，应当理解，除非另外指出，否则本公开不限于所公开的特定装置、系统和/或方法，因此当然可以变化。还要理解，本文所用的术语仅用于描述特定方面的目的，而不旨在是限制性的。
提供以下描述作为实施教导。为此，相关领域的技术人员将了解并认识到可以进行许多改变，同时仍获得有益的结果。还将显而易见的是，可通过选择一些特征而不利用其它特征来获得一些所期望的益处。因此，在本领域中工作的人员将认识到，许多修改和调适是可能的，并且在某些情况下甚至可能是期望的，并且由本公开考虑。因此，提供以下描述是为了说明原理而不是对其进行限制。
除非上下文另外明确规定，否则如全文中使用的单数形式“一个”、“一种”和“该/所述”包括复数指代物。因此，举例来说，除非上下文另外规定，否则对“MEMS力传感器”的引用可包括两个或更多个此类MEMS力传感器。
本文使用的术语“包含”及其变型与术语“包括”及其变型同义使用，并且是开放的非限制性术语。
范围在本文中可以表达为从“约”一个特定值和/或到“约”另一特定值。当表达此类范围时，另一方面包括从一个特定值和/或到另一特定值。类似地，当数值通过使用先行词“约”表达为近似值时，应理解，特定值形成另一方面。将进一步理解，每个范围的端点在相对于另一端点和独立于另一端点方面都是有效的。
如本文所用的，术语“任选的”或“任选地”意味着随后描述的事件或情况可以发生或可以不发生，并且所述描述包括所述事件或情况发生的例子和所述事件或情况不发生的例子。
本文中描述了用于测量施加到MEMS力传感器10的至少一部分的力的MEMS力传感器。在一个方面，如图1-4中所描绘，力传感器10包括基部11(有时也称作“传感器管芯”或“力传感器管芯”)和盖12。基部11和盖12可以在沿着由基部11的外壁13形成的表面在一个或多个点处结合。换句话说，基部11和盖12可在MEMS力传感器10的外围区域处结合。应理解，MEMS力传感器10的外围区与其中心间隔开，即，外围区布置在MEMS力传感器10的外边缘附近。盖和传感器管芯在MEMS力传感器的外围区结合的示例性MEMS力传感器在以下文献中描述：2016年11月8日颁发的名称为“加固型MEMS力管芯(Ruggedized MEMS Force Die)”的美国专利号9,487,388，2016年11月15日颁发的名称为“晶片级MEMS力管芯(Wafer LevelMEMS Force Dies)”的美国专利号9,493,342，Brosh等人于2015年1月13日提交的名称为“小型化的加固型晶片级MEMS力传感器(Miniaturized and ruggedized wafer levelmems force sensors)”的美国专利申请公开号2016/0332866，以及Campbell等人于2016年6月10日提交的名称为“具有公差沟道的加固型晶片级MEMS力传感器(Ruggedized waferlevel mems force sensor with a tolerance trench)”的美国专利申请公开号2016/0363490，上述专利的公开内容通过全文引用的方式并入本文中。因此，结合区域可布置成邻近MEMS力传感器10的外边缘，与邻近于其中心区域相反。这允许结合区域占据盖12与基部11之间的表面积的大的百分比，这产生具有改进的强度和稳健性的MEMS力传感器。
盖12可任选地由玻璃(例如，硼硅酸盐玻璃)或硅制成。基部11可任选地由硅制成。任选地，基部11(及其部件，例如，如凸台、外壁、弯曲部等)是单件连续的材料，即，基部11是整体的。应当理解，本公开设想，盖12和/或基部11可以由除了作为示例提供的那些材料之外的材料制成。本公开设想，可以使用本领域已知的技术，包括但不限于硅融合结合、阳极键合、玻璃烧结、热压缩和共晶键合，结合盖12和基部11。
基部11与盖12之间的内表面形成密封腔14。可以通过从基部11蚀刻沟道(例如，如下文参照图5-8所述)然后密封结合的基部11与盖12之间的容积来形成密封腔14。例如，当粘附在一起时，该容积被密封在基部11和盖12之间，这导致密封腔14的形成。可通过从基部11去除材料(例如，本文所述的深蚀刻过程)来蚀刻沟道。另外，沟道限定外壁13和至少一个弯曲部16。在图1-3中，沟道是连续的并且具有基本上正方形的形状。应理解，沟道可具有不同于仅作为示例提供的图1-3中所示的沟道的其它形状、尺寸和/或图案。任选地，沟道可形成多个外壁和/或多个弯曲部。具有限定柔性感测元件(例如，弯曲部)的腔(例如，沟道)的示例性MEMS力传感器在以下文献中描述：2016年11月8日颁发的名称为“加固型MEMS力管芯(Ruggedized MEMS Force Die)”的美国专利号9,487,388，2016年11月15日颁发的名称为“晶片级MEMS力管芯(Wafer Level MEMS Force Dies)”的美国专利号9,493,342，Brosh等人于2015年1月13日提交的名称为“小型化的加固型晶片级MEMS力传感器(Miniaturizedand ruggedized wafer level mems force sensors)”的美国专利申请公开号2016/0332866以及Campbell等人于2016年6月10日提交的名称为“具有公差沟道的加固型晶片级MEMS力传感器(Ruggedized wafer level mems force sensor with a tolerancetrench)”的美国专利申请公开号2016/0363490，上述专利的公开内容通过全文引用的方式并入本文中。当盖12和基部11结合在一起时，密封腔14可密封在盖12与基部11之间。换句话说，MEMS力传感器10具有密封腔14，所述密封腔限定由盖12和基部11完全封闭的容积。密封腔14与外部环境密封。
基部11具有顶表面18a和底表面18b。顶表面18a和底表面18b彼此相对布置。从基部11的顶表面18a蚀刻限定外壁13和弯曲部16的沟道。接触表面15沿着盖12的表面(例如，沿着其顶表面)布置以用于接收所施加的力“F”。力“F”通过外壁13从盖12传递到至少一个弯曲部16。MEMS力传感器10可包括在基部11的一部分和盖12之间的气隙17(有时也称为“间隙”或“过载间隙”)。气隙17可在密封腔14内。例如，可通过从基部11去除材料(例如，本文所述的浅蚀刻过程)形成气隙17。或者，可通过蚀刻盖12的一部分来形成气隙17。或者，可通过蚀刻基部11的一部分和盖12的一部分来形成气隙17。气隙17的尺寸(例如，厚度或深度)可由至少一个弯曲部16的最大偏转确定，使得在至少一个弯曲部16破裂之前，基部11与盖12之间的气隙17将关闭并且机械阻止进一步的偏转。气隙17通过限制至少一个弯曲部16可偏转的量提供过载停止，使得弯曲部不会由于施加过大的力而机械失效。被设计成提供过载保护的示例性MEMS力传感器在以下文献中描述：2016年11月8日颁发的名称为“加固型MEMS力管芯(Ruggedized MEMS Force Die)”的美国专利号9,487,388，2016年11月15日颁发的名称为“晶片级MEMS力管芯(Wafer Level MEMS Force Dies)”的美国专利号9,493,342，Brosh等人于2015年1月13日提交的名称为“小型化的加固型晶片级MEMS力传感器(Miniaturized and ruggedized wafer level mems force sensors)”的美国专利申请公开号2016/0332866以及Campbell等人于2016年6月10日提交的名称为“具有公差沟道的加固型晶片级MEMS力传感器(Ruggedized wafer level mems force sensor with atolerance trench)”的美国专利申请公开号2016/0363490，上述专利的公开内容通过全文引用的方式并入本文中。
现在参考图3和图4，分别示出了MEMS力传感器10的侧视图和仰视图。MEMS力传感器10包括设置在基部11的底表面18b上的至少一个感测元件22。可选地，多个感测元件22可以设置在基部11的底表面18b上。本公开设想，感测元件22可以扩散、沉积或注入到基部11的底表面18b上。感测元件22可响应于至少一个弯曲部16的偏转而改变电气特性(例如，电阻、电容、电荷等)。电气特性的变化可以作为本文所述的模拟电信号来测量。在一种实施方式中，感测元件22可以任选地是压阻式换能器。例如，当在至少一个弯曲部16中诱发与施加到接触表面15的力“F”成比例的应变时，在压阻式换能器上产生局部应变，使得根据其具体取向压阻式换能器经历压缩或张力。当压阻式换能器压缩和拉紧时，其电阻率以相反的方式变化。因此，包括多个(例如，四个)压阻式换能器(例如，相对于应变的每个取向中的两个)的Wheatstone(惠斯通)桥电路变得不平衡，并且在正信号端子和负信号终端上产生差分电压(在本文中有时也称为“模拟电信号”)。此差分电压与MEMS力传感器10的盖12上所施加的力“F”成正比。如下文所描述，此差分电压可在数字电路(例如，CMOS电路23)处接收并由其处理，所述数字电路也设置于基部11上。例如，除了其他功能之外，数字电路可以被配置成将模拟电信号转换成数字电输出信号。尽管压阻式换能器作为示例性感测元件提供，但本公开设想，至少一个感测元件22可以是任何传感器元件，其被配置成基于所施加的力的量或大小改变至少一个电特性(例如，电阻、电荷、电容等)，并且可输出与所施加的力的量或大小成比例的信号。其他类型的感测元件包括但不限于压电或电容式传感器。
还设想由Wheatstone(惠斯通)桥配置中的至少一个感测元件22产生的模拟电信号可以可选地由位于与至少一个感测元件22相同的表面上的数字电路处理。在一个实施方式中，数字电路是CMOS电路23。因此，CMOS电路23可设置于基部11的底表面18b上，如图4所示。换句话说，感测元件22和CMOS电路23都可设置在同一整体衬底(例如，基部11，其可任选地由硅制成)上。这与将由至少一个感测元件22产生的模拟电信号传送至MEMS力传感器10自身外部的数字电路相反。应理解，将模拟电信号传送到MEMS力传感器10外部的电路可导致由于电噪声损失信号完整性。CMOS电路23可任选地包括差分放大器或缓冲器、模数转换器、时钟发生器、非易失性存储器和通信总线中的一个或多个。另外，CMOS电路23可任选地包括可编程存储器以存储可在工厂校准期间设置的修整值。修整值可用于确保MEMS力传感器10在指定误差容限内提供准确的绝对力输出。此外，可编程存储器可以任选地存储可追溯的装置标识符(“ID”)。CMOS电路在所属领域中是已知的，且因此未在下文进一步详细描述。本公开设想CMOS电路23可包括除了作为示例提供的电路之外的电路。例如，本公开设想CMOS电路23可任选地包括用以提高准确度的部件，例如内部电压调节器或温度传感器。如本文所述，Wheatstone(惠斯通)桥的差分模拟输出可以被放大、数字化并存储在通信缓冲器中，直到其被主机装置请求。MEMS力传感器10还可包括如图3和图4所示的至少一个电端子19。电端子19可为用于(例如，电、通信地)连接到主机装置的电力和/或通信接口。电端子19可以是焊料凸块或金属(例如，铜)柱以允许晶片级封装和倒装芯片组装。尽管提供了焊料凸块和铜柱作为示例，但本公开设想了电端子19可为能够将MEMS力传感器10电连接到主机装置的任何部件。另外，应理解，仅作为示例在图3和图4中提供电端子19的数量和/或布置。
在基部11的相同表面(例如，底表面18b)上形成至少一个感测元件22和CMOS电路23的过程可以概括为三级过程。第一级是通过扩散、沉积或用光刻暴光过程图案化的注入来产生至少一个感测元件22。第二级是通过标准CMOS工艺流程产生CMOS电路23。第三级是产生基部11元件，其包括外壁13、密封腔14、至少一个弯曲部16和气隙17。设想这些级可以制造过程允许的任何顺序执行。
第一级包括形成至少一个感测元件(例如，图4所示的感测元件22)的步骤。现在参考图5至图8，常见CMOS工艺从p型硅晶片101开始。本公开设想可以使用p型硅晶片来制造上文关于图1-4描述的MEMS力传感器。然而，应理解，类似的CMOS工艺可适于其它起始材料，例如n型硅晶片。此外，本公开设想可以使用除硅以外的半导体晶片。感测元件(例如，图4所示的至少一个感测元件22)可以实施为如图5所示的n型扩散、沉积或注入102，或者如图6所示的p型扩散、沉积或完全包含在n型阱204中的注入202。在前一方面(即，图5的n型扩散、沉积或注入)，感测元件的端子包括连接到n型扩散、沉积或注入102的高度掺杂的n型注入103。在后一方面(即，图6的p型扩散、沉积或注入)，感测元件的端子包括连接到p型扩散、沉积或注入202的高度掺杂的p型注入203，而n型阱204通过高度掺杂的n型注入105接收电压偏置。
在替代方面，感测元件可以实施为如图7所示的n型或p型多晶硅注入302，其在常见CMOS工艺中通过n型或p型注入可用作栅极或电容器层。如图7所示，感测元件的端子包括连接到注入302的低电阻硅化多晶硅303。在又一替代方面，感测元件可以结合如图8所示的顶部电极401和底部电极403与压电层402一起实施。另外，如图5-8所示，感测元件与数字电路(例如，如图4所示的CMOS电路23)之间的电连接可以与导电互连层112和通孔113一起实施。例如，互连层112和通孔113可任选地由金属制成。
第二级包括光刻、注入、退火、沉积和蚀刻过程以形成数字电路(例如，如图4所示的CMOS电路23)。这些过程广泛地用于行业中并在相关领域中描述。因此，这些过程未在本文中详细描述。第二级可包括产生NMOS器件110，其包括n型源极和漏极注入108。第二级还可包括产生PMOS器件111，其包括p型源极和漏极注入109。p型源极和漏极注入109设置在n型阱中，该n型阱通过高度掺杂的n型注入105接收电压偏置。另外，NMOS器件110和PMOS器件111中的每一个可包括金属-氧化物栅极堆叠107。应理解，第二级可包括产生多个NMOS器件和PMOS器件。NMOS器件和PMOS器件可形成数字电路(例如，图4所示的CMOS电路23)的各种部件。数字电路可以任选地包括其它部件，其未在图5-8中描绘，包括但不限于：双极晶体管、金属绝缘体-金属(“MIM”)和金属氧化物半导体(“MOS”)电容器、扩散的、注入的和多晶硅电阻器，和/或二极管。
如上所述，感测元件和数字电路(例如，图4所示的感测元件22和CMOS电路23)可以设置在相同的整体衬底(例如，图4所示的基部11)上。因此，本公开设想，在数字电路之前产生感测元件的实施方式中，在产生感测元件(例如，图4所示的至少一个感测元件22)中使用的每个处理步骤(即，第一级处理步骤)与在产生数字电路(例如，图4所示的CMOS电路23)使用的下游处理步骤(即，第二级处理步骤)兼容。例如，n型扩散、沉积或注入102(例如，如图5所示)或p型扩散、沉积或注入202(例如，如图6所示)可以设计成使得在产生数字电路(例如，图4所示的CMOS电路23)使用的退火过程之后其将到达其目标深度。可以对上述特征以及与感测元件相关的特征中的每一个特征进行类似设计考虑。替代过程可包括在形成数字电路(例如，图4所示的CMOS电路23)期间或之后的任何时间点执行的形成感测元件(例如，图5所示的注入103或图6所示的注入105、203)的端子，这会对退火步骤强加不同要求。
第三级包括在p型硅晶片101上执行的MEMS微加工步骤。应理解，图5-8的p型硅晶片101可对应于图1-4中所示的MEMS力传感器10的基部11。本公开设想，根据制造工艺的能力，第三级步骤可在第一级和第二级执行之前或之后执行。如上文关于图1-4所述，可蚀刻基部11以形成气隙17、外壁13和至少一个弯曲部16。浅蚀刻可形成气隙17。深蚀刻可形成外壁13和至少一个弯曲部16。深蚀刻由图5-8中的附图标记106示出。如图5-8所示，感测元件形成于至少一个弯曲部的表面上。之后，基部(例如，图1-4所示的基部11)结合到如上所述的盖(例如，图1-4所示的盖12)。因此，形成密封腔(例如，图1-3所示的密封腔14)。在完成所有晶片处理之后，可添加电端子(例如，如图3-4所示的电端子19)。
本文还描述了MEMS开关装置。现在参考图9-10，示出了示例性MEMS开关装置50。MEMS开关装置50可包括具有顶表面58a和底表面58b的基部51。MEMS开关装置50还可包括结合到基部51的盖52，在其间形成密封腔54。如图10所示，至少一个感测元件62和数字电路63(例如，CMOS电路)布置在基部51的底表面58b上。电端子59也布置在基部51的底表面58b上。电端子59可用于将MEMS开关装置电和/或通信连接到主机装置。电端子59可促进晶片级封装和倒装芯片组装。另外，在图9中示出了施加力的接触表面55。当施加力时，力从盖52传递到基部51，其中，在基部的底表面58b中诱发应变。感测元件62的电学特性响应于局部应变而变化。此变化由感测元件62产生的模拟电信号捕获。模拟电信号被传输到数字电路63以进行进一步处理。应理解，MEMS开关装置50类似于上文关于图1-8描述的MEMS力传感器。因此，MEMS开关装置50的各种特征未在下文进一步详细描述。
如上所述，MEMS开关装置50可以任选地包括被配置为Wheatstone(惠斯通)桥的多个感测元件62。由Wheatstone(惠斯通)桥配置中的感测元件62产生的模拟电信号可以任选地由驻存在基部51的底表面58b上的互补金属氧化物半导体(CMOS)电路(例如，数字电路63)处理。换句话说，感测元件62和CMOS电路都可布置在基部的相同表面上。如上所述，CMOS电路可包括差分放大器或缓冲器、模数转换器、时钟发生器、非易失性存储器，和/或一个或多个数字输出。所述一个或多个数字输出可被配置成当达到一个或多个力阈值时改变状态。这样，MEMS开关装置50可以用作单级或多级二进制开关。举例来说，在具有两个数字输出的一个方面中，三个力水平(例如，预定力阈值)可被编程为高于标称零力，从而实现三级开关。图11是描述两位数字输出的输出(D1,D2)的真值表(例如，数字输出码)。在图11中，三个力阈值是f1、f2和f3。本公开设想，输出的数量和力阈值的数量/值可根据MEMS开关装置50的设计而变化。数字输出可被配置成指示2N个输入力水平，其中N是输出端子的数量。数字输出/输入力水平可由用户编程。
另外，CMOS电路可任选地包括可编程存储器以存储可在工厂校准期间设置的修整值。修整值可用于确保MEMS开关装置50在指定误差容限内提供准确的力水平检测。此外，可编程存储器可以可选地存储可追溯的装置ID。本公开设想CMOS电路可包括除了作为示例提供的电路之外的电路。例如，本公开设想CMOS电路任选地包括提高准确度的部件，例如，内部电压调节器或温度传感器。
在一个方面，可能需要独立于施加到MEMS开关装置50的任何偏置或静力来维持一致的力水平转换。在这个方面，MEMS开关装置50可以被配置成将动态力与编程的力阈值进行比较，过滤由各种条件(包括机械预载荷和温度变化)引起的任何低频响应。这可以通过执行低频基线操作来实现，所述低频基线操作将当前力输入与自动校准阈值进行比较。图12是说明基线过程的示例性操作的流程图。在1202处，MEMS开关装置例如响应于所施加的力进入激活状态。在1204处，设置基线。在1206处，如果当前力输入小于自动校准阈值，则将当前力输入设置为新基线直到下一操作。换句话说，操作返回到1204。另一方面，在1206处，如果当前力输入大于自动校准阈值，则基线保持不变，如在1208处所示。可以以类似于切换力阈值的方式将操作的自动校准阈值和频率编程为例如0.5N的自动校准阈值和10Hz的基线频率。应当理解，自动校准阈值和基线频率的值仅作为示例提供，并且可以具有其它值。
尽管已经以特定于结构特征和/或方法动作的语言描述了主题，但要理解，所附权利要求书中定义的主题不一定限于上文所描述的具体特征或动作。相反，上文描述的具体特征和动作是作为实施权利要求书的示例性形式而公开的。

Claims (14)

1.一种微机电MEMS开关，包括：
传感器管芯，所述传感器管芯被配置成接收所施加的力，其中，所述传感器管芯包括顶表面和与其相对的底表面；
感测元件，所述感测元件布置在所述传感器管芯的底表面上，其中，所述感测元件被配置成将应变转换成与所述应变成比例的模拟电信号；和
数字电路，所述数字电路布置在所述传感器管芯的底表面上，其中所述感测元件和数字电路被布置在所述传感器管芯的相同表面上，以及其中，所述数字电路被配置成：
将所述模拟电信号转换成数字信号，以及
基于多个预定力阈值提供数字输出码，其中所述数字电路包括差分放大器或缓冲器、模数转换器、时钟发生器、非易失性存储器或数字输出中的一个或多个；
其中所述数字电路存储能在工厂校准期间设置的、用于确保MEMS开关在指定误差容限内提供准确的力水平检测的修正值；以及
所述MEMS开关用作单级或多级二进制开关，以及所述MEMS开关还被配置成将动态力与编程的力阈值进行比较，过滤低频响应，这通过执行低频基线操作来实现，所述低频基线操作将当前力输入与自动校准阈值进行比较。
2.根据权利要求1所述的MEMS开关，其中，所述数字电路还被配置成将所述数字信号与所述预定力阈值进行比较。
3.根据权利要求1所述的MEMS开关，其中，所述预定力阈值是相对于基线的。
4.根据权利要求3所述的MEMS开关，其中，所述数字电路还被配置成以预定频率更新所述基线。
5.根据权利要求4所述的MEMS开关，其中，通过将所述数字信号与自动校准阈值进行比较来更新所述基线。
6.根据权利要求1所述的MEMS开关，其中，所述感测元件通过扩散或注入形成。
7.根据权利要求1所述的MEMS开关，其中，所述感测元件通过多晶硅过程从集成电路过程形成。
8.根据权利要求1所述的MEMS开关，还包括布置在所述传感器管芯的底表面上的多个电端子，其中，由所述数字电路提供的数字输出码被传送到所述电端子。
9.根据权利要求8所述的MEMS开关，其中，所述电端子包括焊料凸块或铜柱。
10.根据权利要求1所述的MEMS开关，还包括盖，所述盖在由所述传感器管芯的外壁限定的表面处附接到所述传感器管芯，其中，在所述盖与所述传感器管芯之间形成密封腔。
11.根据权利要求10所述的MEMS开关，其中，所述传感器管芯包括形成于其中的弯曲部，并且其中，所述弯曲部将所施加的力转换成所述传感器管芯的底表面上的应变。
12.根据权利要求11所述的MEMS开关，其中，所述弯曲部通过蚀刻形成在所述传感器管芯中。
13.根据权利要求10所述的MEMS开关，其中，间隙布置在所述传感器管芯与所述盖之间，并且其中，所述间隙被配置成在施加所施加的力时变窄，使得弯曲部不能变形超过其断裂点。
14.根据权利要求1所述的MEMS开关，其中所述感测元件包括压阻式、压电式或电容式换能器。
CN201880023913.1A 2017-02-09 2018-02-09 集成数字力传感器和相关制造方法 Active CN110494724B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202310861847.8A CN116907693A (zh) 2017-02-09 2018-02-09 集成数字力传感器和相关制造方法

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201762456699P 2017-02-09 2017-02-09
US62/456,699 2017-02-09
US201762469094P 2017-03-09 2017-03-09
US62/469,094 2017-03-09
PCT/US2018/017564 WO2018148503A1 (en) 2017-02-09 2018-02-09 Integrated digital force sensors and related methods of manufacture

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202310861847.8A Division CN116907693A (zh) 2017-02-09 2018-02-09 集成数字力传感器和相关制造方法

Publications (2)

Publication Number Publication Date
CN110494724A CN110494724A (zh) 2019-11-22
CN110494724B true CN110494724B (zh) 2023-08-01

Family

ID=63107596

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201880023913.1A Active CN110494724B (zh) 2017-02-09 2018-02-09 集成数字力传感器和相关制造方法
CN202310861847.8A Pending CN116907693A (zh) 2017-02-09 2018-02-09 集成数字力传感器和相关制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN202310861847.8A Pending CN116907693A (zh) 2017-02-09 2018-02-09 集成数字力传感器和相关制造方法

Country Status (4)

Country Link
US (2) US11255737B2 (zh)
EP (1) EP3580539A4 (zh)
CN (2) CN110494724B (zh)
WO (1) WO2018148503A1 (zh)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10198097B2 (en) 2011-04-26 2019-02-05 Sentons Inc. Detecting touch input force
US9639213B2 (en) 2011-04-26 2017-05-02 Sentons Inc. Using multiple signals to detect touch input
US11327599B2 (en) 2011-04-26 2022-05-10 Sentons Inc. Identifying a contact type
KR101852549B1 (ko) 2011-11-18 2018-04-27 센톤스 아이엔씨. 국소형 햅틱 피드백
KR101648143B1 (ko) 2011-11-18 2016-08-16 센톤스 아이엔씨. 터치 입력 힘 검출
US10908741B2 (en) 2016-11-10 2021-02-02 Sentons Inc. Touch input detection along device sidewall
WO2018148510A1 (en) 2017-02-09 2018-08-16 Nextinput, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
EP3580539A4 (en) * 2017-02-09 2020-11-25 Nextinput, Inc. INTEGRATED DIGITAL FORCE SENSORS AND ASSOCIATED MANUFACTURING PROCESSES
US10585522B2 (en) 2017-02-27 2020-03-10 Sentons Inc. Detection of non-touch inputs using a signature
EP3655740A4 (en) 2017-07-19 2021-07-14 Nextinput, Inc. STRESS TRANSFER STACKING IN MEMS FORCE SENSOR
US11423686B2 (en) 2017-07-25 2022-08-23 Qorvo Us, Inc. Integrated fingerprint and force sensor
US11243126B2 (en) 2017-07-27 2022-02-08 Nextinput, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
US11009411B2 (en) * 2017-08-14 2021-05-18 Sentons Inc. Increasing sensitivity of a sensor using an encoded signal
US11580829B2 (en) 2017-08-14 2023-02-14 Sentons Inc. Dynamic feedback for haptics
US11914777B2 (en) 2017-09-07 2024-02-27 Nextinput, Inc. Integrated systems with force or strain sensing and haptic feedback
WO2019079420A1 (en) 2017-10-17 2019-04-25 Nextinput, Inc. SHIFT TEMPERATURE COEFFICIENT COMPENSATION FOR FORCE SENSOR AND STRAIN GAUGE
WO2019099821A1 (en) 2017-11-16 2019-05-23 Nextinput, Inc. Force attenuator for force sensor
US11662258B2 (en) * 2019-05-29 2023-05-30 Wiliot, LTD. Force sensor integrated on substrate
WO2020243696A1 (en) 2019-05-30 2020-12-03 Nextinput, Inc. Systems and methods for continuous mode force testing
DE102020202277A1 (de) 2020-02-21 2021-08-26 Robert Bosch Gesellschaft mit beschränkter Haftung Mikromechanisches Bauteil für einen Stresssensor und Herstellungsverfahren für ein mikromechanisches Bauteil für einen Stresssensor
US12103182B1 (en) 2023-10-20 2024-10-01 Tacta Systems Inc. Tactile robotic training platform

Family Cites Families (433)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5817421B2 (ja) 1979-02-02 1983-04-07 日産自動車株式会社 半導体圧力センサ
FI69211C (fi) 1984-02-21 1985-12-10 Vaisala Oy Kapacitiv styckgivare
US4658651A (en) 1985-05-13 1987-04-21 Transamerica Delaval Inc. Wheatstone bridge-type transducers with reduced thermal shift
US4849730A (en) 1986-02-14 1989-07-18 Ricoh Company, Ltd. Force detecting device
US4842685A (en) 1986-04-22 1989-06-27 Motorola, Inc. Method for forming a cast membrane protected pressure sensor
US4814856A (en) 1986-05-07 1989-03-21 Kulite Semiconductor Products, Inc. Integral transducer structures employing high conductivity surface features
US4914624A (en) 1988-05-06 1990-04-03 Dunthorn David I Virtual button for touch screen
US5320705A (en) 1988-06-08 1994-06-14 Nippondenso Co., Ltd. Method of manufacturing a semiconductor pressure sensor
US5095401A (en) 1989-01-13 1992-03-10 Kopin Corporation SOI diaphragm sensor
US4918262A (en) 1989-03-14 1990-04-17 Ibm Corporation Touch sensing display screen signal processing apparatus and method
US4933660A (en) 1989-10-27 1990-06-12 Elographics, Inc. Touch sensor with touch pressure capability
US4983786A (en) 1990-01-17 1991-01-08 The University Of British Columbia XY velocity controller
GB9008946D0 (en) 1990-04-20 1990-06-20 Crosfield Electronics Ltd Image processing apparatus
WO1991017415A1 (de) 1990-05-07 1991-11-14 Robert Bosch Gmbh Verfahren und vorrichtung zum herstellen eines sensors zum bestimmen von druckkräften
US5166612A (en) * 1990-11-13 1992-11-24 Tektronix, Inc. Micromechanical sensor employing a squid to detect movement
US5159159A (en) 1990-12-07 1992-10-27 Asher David J Touch sensor and controller
EP0496956B1 (de) 1991-01-31 1997-01-15 Pfister Messtechnik GmbH Übertragungselement für Kraft- oder Momentmessvorrichtungen
US5969591A (en) 1991-03-28 1999-10-19 The Foxboro Company Single-sided differential pressure sensor
US5237879A (en) 1991-10-11 1993-08-24 At&T Bell Laboratories Apparatus for dynamically varying the resolution of a tactile sensor array
DE4137624A1 (de) 1991-11-15 1993-05-19 Bosch Gmbh Robert Silizium-chip zur verwendung in einem kraftsensor
US5333505A (en) 1992-01-13 1994-08-02 Mitsubishi Denki Kabushiki Kaisha Semiconductor pressure sensor for use at high temperature and pressure and method of manufacturing same
US6222525B1 (en) 1992-03-05 2001-04-24 Brad A. Armstrong Image controllers with sheet connected sensors
US5673066A (en) 1992-04-21 1997-09-30 Alps Electric Co., Ltd. Coordinate input device
US6028271A (en) 1992-06-08 2000-02-22 Synaptics, Inc. Object position detector with edge motion feature and gesture recognition
US5889236A (en) 1992-06-08 1999-03-30 Synaptics Incorporated Pressure sensitive scrollbar feature
US5880411A (en) 1992-06-08 1999-03-09 Synaptics, Incorporated Object position detector with edge motion feature and gesture recognition
US5543591A (en) 1992-06-08 1996-08-06 Synaptics, Incorporated Object position detector with edge motion feature and gesture recognition
KR940001227A (ko) 1992-06-15 1994-01-11 에프. 제이. 스미트 터치 스크린 디바이스
US5351550A (en) 1992-10-16 1994-10-04 Honeywell Inc. Pressure sensor adapted for use with a component carrier
US5565657A (en) 1993-11-01 1996-10-15 Xerox Corporation Multidimensional user interface input device
US5510812A (en) 1994-04-22 1996-04-23 Hasbro, Inc. Piezoresistive input device
US7138984B1 (en) 2001-06-05 2006-11-21 Idc, Llc Directly laminated touch sensitive screen
DE4416442A1 (de) 1994-05-11 1995-11-16 Hottinger Messtechnik Baldwin Verfahren und Vorrichtung zum Abgleich eines Meßkörpers eines Meßwertaufnehmers
US5780727A (en) 1994-09-12 1998-07-14 International Business Machines Corporation Electromechanical transducer
US5483994A (en) 1995-02-01 1996-01-16 Honeywell, Inc. Pressure transducer with media isolation and negative pressure measuring capability
JP3317084B2 (ja) 1995-03-31 2002-08-19 株式会社豊田中央研究所 力検知素子およびその製造方法
US7766383B2 (en) 1998-11-17 2010-08-03 Automotive Technologies International, Inc. Vehicular component adjustment system and method
US7973773B2 (en) 1995-06-29 2011-07-05 Pryor Timothy R Multipoint, virtual control, and force based touch screen applications
US5661245A (en) 1995-07-14 1997-08-26 Sensym, Incorporated Force sensor assembly with integrated rigid, movable interface for transferring force to a responsive medium
US6012336A (en) * 1995-09-06 2000-01-11 Sandia Corporation Capacitance pressure sensor
IL116536A0 (en) 1995-12-24 1996-03-31 Harunian Dan Direct integration of sensing mechanisms with single crystal based micro-electric-mechanics systems
US6351205B1 (en) 1996-07-05 2002-02-26 Brad A. Armstrong Variable-conductance sensor
US7629969B2 (en) 1996-08-12 2009-12-08 Tyco Electronics Corporation Acoustic condition sensor employing a plurality of mutually non-orthogonal waves
DE69707906T2 (de) 1996-10-03 2002-06-27 I.E.E. International Electronics & Engineering S.A.R.L., Luxemburg/Luxembourg Verfahren und Vorrichtung zur Bestimmung von verschiedenen Parametern einer auf einen Sitz sitzenden Person
US5760313A (en) 1997-03-05 1998-06-02 Honeywell Inc. Force sensor with multiple piece actuation system
FR2762389B1 (fr) 1997-04-17 1999-05-21 Commissariat Energie Atomique Microsysteme a membrane souple pour capteur de pression et procede de realisation
US6243075B1 (en) 1997-08-29 2001-06-05 Xerox Corporation Graspable device manipulation for controlling a computer display
US5994161A (en) 1997-09-03 1999-11-30 Motorola, Inc. Temperature coefficient of offset adjusted semiconductor device and method thereof
US9292111B2 (en) 1998-01-26 2016-03-22 Apple Inc. Gesturing with a multipoint sensing device
US6159166A (en) 1998-03-20 2000-12-12 Hypertension Diagnostics, Inc. Sensor and method for sensing arterial pulse pressure
US6556189B1 (en) 1998-04-24 2003-04-29 Nissha Printing Co., Ltd. Touch panel device
US6429846B2 (en) 1998-06-23 2002-08-06 Immersion Corporation Haptic feedback for touchpads and other touch controls
US5921896A (en) 1998-09-04 1999-07-13 Boland; Kevin O. Exercise device
JP2002532717A (ja) 1998-12-11 2002-10-02 サイミックス テクノロジーズ、インク 迅速な物質特性評価のためのセンサ配列に基づくシステム及びその方法
US6331161B1 (en) 1999-09-10 2001-12-18 Hypertension Diagnostics, Inc Method and apparatus for fabricating a pressure-wave sensor with a leveling support element
US6360598B1 (en) 1999-09-14 2002-03-26 K.K. Holding Ag Biomechanical measuring arrangement
US7138983B2 (en) 2000-01-31 2006-11-21 Canon Kabushiki Kaisha Method and apparatus for detecting and interpreting path of designated position
AU2001245936A1 (en) 2000-03-23 2001-10-03 Cross Match Technologies, Inc. Piezoelectric identification device and applications thereof
US6313731B1 (en) 2000-04-20 2001-11-06 Telefonaktiebolaget L.M. Ericsson Pressure sensitive direction switches
AU2001257329A1 (en) 2000-04-28 2001-11-12 Armed L.L.C. Apparatus and method for mechanical imaging of breast
US6555235B1 (en) 2000-07-06 2003-04-29 3M Innovative Properties Co. Touch screen system
US6879318B1 (en) 2000-10-06 2005-04-12 Industrial Technology Research Institute Touch screen mounting assembly for LCD panel and method for fabrication
US7348964B1 (en) 2001-05-22 2008-03-25 Palm, Inc. Single-piece top surface display layer and integrated front cover for an electronic device
JP2002236542A (ja) 2001-02-09 2002-08-23 Sanyo Electric Co Ltd 信号検出装置
JP3798637B2 (ja) 2001-02-21 2006-07-19 インターナショナル・ビジネス・マシーンズ・コーポレーション タッチパネル式記入媒体装置、その制御方法、及びプログラム
US6569108B2 (en) 2001-03-28 2003-05-27 Profile, Llc Real time mechanical imaging of the prostate
US6822640B2 (en) 2001-04-10 2004-11-23 Hewlett-Packard Development Company, L.P. Illuminated touch pad
US20020149571A1 (en) 2001-04-13 2002-10-17 Roberts Jerry B. Method and apparatus for force-based touch input
US6801191B2 (en) 2001-04-27 2004-10-05 Matsushita Electric Industrial Co., Ltd. Input device and inputting method with input device
FI117488B (fi) 2001-05-16 2006-10-31 Myorigo Sarl Informaation selaus näytöllä
US6608618B2 (en) 2001-06-20 2003-08-19 Leapfrog Enterprises, Inc. Interactive apparatus using print media
US6753850B2 (en) 2001-07-24 2004-06-22 Cts Corporation Low profile cursor control device
JP3798287B2 (ja) 2001-10-10 2006-07-19 Ｓｍｋ株式会社 タッチパネル入力装置
KR100822185B1 (ko) 2001-10-10 2008-04-16 삼성에스디아이 주식회사 터치 패널
EP1449197B1 (en) 2001-11-01 2019-06-26 Immersion Corporation Method and apparatus for providing tactile feedback sensations
US6995752B2 (en) 2001-11-08 2006-02-07 Koninklijke Philips Electronics N.V. Multi-point touch pad
FI115861B (fi) 2001-11-12 2005-07-29 Myorigo Oy Menetelmä ja laite palautteen generoimiseksi
US6915702B2 (en) 2001-11-22 2005-07-12 Kabushiki Kaisha Toyota Chuo Kenkyusho Piezoresistive transducers
JP4109456B2 (ja) 2002-01-18 2008-07-02 独立行政法人産業技術総合研究所 低剛性力検出装置
US6888537B2 (en) 2002-02-13 2005-05-03 Siemens Technology-To-Business Center, Llc Configurable industrial input devices that use electrically conductive elastomer
GB2386707B (en) 2002-03-16 2005-11-23 Hewlett Packard Co Display and touch screen
TWI234115B (en) 2002-04-03 2005-06-11 Htc Corp Method and device of setting threshold pressure for touch panel
FI115258B (fi) 2002-04-23 2005-03-31 Myorigo Oy Menetelmä ja elektroninen laite graafisessa käyttöliittymässä navigoimiseksi
US6809280B2 (en) 2002-05-02 2004-10-26 3M Innovative Properties Company Pressure activated switch and touch panel
CA2391745C (en) 2002-06-25 2012-08-14 Albert Mark David Touch screen display using ultra-thin glass laminate
JP4115198B2 (ja) 2002-08-02 2008-07-09 株式会社日立製作所 タッチパネルを備えた表示装置
US6946742B2 (en) 2002-12-19 2005-09-20 Analog Devices, Inc. Packaged microchip with isolator having selected modulus of elasticity
KR100997945B1 (ko) 2002-10-30 2010-12-02 소니 주식회사 입력 장치 및 그 제조 방법, 입력 장치를 구비한 휴대형전자 기기
JP4028785B2 (ja) 2002-11-05 2007-12-26 株式会社タニタ 荷重検出ユニットおよびこれを利用した電子秤
US20070155589A1 (en) 2002-12-04 2007-07-05 Philip Feldman Method and Apparatus for Operatively Controlling a Virtual Reality Scenario with an Isometric Exercise System
US6931938B2 (en) 2002-12-16 2005-08-23 Jeffrey G. Knirck Measuring pressure exerted by a rigid surface
US7685538B2 (en) 2003-01-31 2010-03-23 Wacom Co., Ltd. Method of triggering functions in a computer application using a digitizer having a stylus and a digitizer system
WO2004077387A1 (en) 2003-02-27 2004-09-10 Bang & Olufsen A/S Metal structure with translucent region
AU2003901532A0 (en) 2003-04-04 2003-05-01 Evolution Broadcast Pty Limited Broadcast control
US7082835B2 (en) 2003-06-18 2006-08-01 Honeywell International Inc. Pressure sensor apparatus and method
US8325143B2 (en) 2003-07-21 2012-12-04 Creator Technology B.V. Touch sensitive display for a portable device
US7460109B2 (en) 2003-10-20 2008-12-02 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Navigation and fingerprint sensor
US7218313B2 (en) 2003-10-31 2007-05-15 Zeetoo, Inc. Human interface system
US6868731B1 (en) * 2003-11-20 2005-03-22 Honeywell International, Inc. Digital output MEMS pressure sensor and method
US8164573B2 (en) 2003-11-26 2012-04-24 Immersion Corporation Systems and methods for adaptive interpretation of input from a touch-sensitive input device
JP4164676B2 (ja) 2003-12-25 2008-10-15 株式会社デンソー 力学量センサ素子構造及びその製造方法
US7772657B2 (en) * 2004-12-28 2010-08-10 Vladimir Vaganov Three-dimensional force input control device and fabrication
US7880247B2 (en) 2003-12-29 2011-02-01 Vladimir Vaganov Semiconductor input control device
US8350345B2 (en) 2003-12-29 2013-01-08 Vladimir Vaganov Three-dimensional input control device
US7554167B2 (en) 2003-12-29 2009-06-30 Vladimir Vaganov Three-dimensional analog input control device
US7367232B2 (en) 2004-01-24 2008-05-06 Vladimir Vaganov System and method for a three-axis MEMS accelerometer
US7343233B2 (en) 2004-03-26 2008-03-11 Byung Woo Min Method and system for preventing erroneous starting of a vehicle having a manual transmission
US7548758B2 (en) 2004-04-02 2009-06-16 Nortel Networks Limited System and method for peer-to-peer communication in cellular systems
FI116165B (fi) 2004-05-07 2005-09-30 Myorigo Oy Menetelmä ja järjestely käyttäjän syötteen uudelleen tulkitsemiseksi mobiililaitteessa
JP2008508631A (ja) 2004-08-02 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 浮動小数点値を設定するタッチスクリーンスライダ
JP2008508629A (ja) 2004-08-02 2008-03-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 圧力依存型視覚フィードバックを備えるタッチスクリーン
CN1993672A (zh) 2004-08-02 2007-07-04 皇家飞利浦电子股份有限公司 在触摸屏上的压控导航
US7728821B2 (en) 2004-08-06 2010-06-01 Touchtable, Inc. Touch detecting interactive display
US7449758B2 (en) 2004-08-17 2008-11-11 California Institute Of Technology Polymeric piezoresistive sensors
JP4351599B2 (ja) 2004-09-03 2009-10-28 パナソニック株式会社 入力装置
US7159467B2 (en) 2004-10-18 2007-01-09 Silverbrook Research Pty Ltd Pressure sensor with conductive ceramic membrane
US7324095B2 (en) 2004-11-01 2008-01-29 Hewlett-Packard Development Company, L.P. Pressure-sensitive input device for data processing systems
JP2006134184A (ja) 2004-11-08 2006-05-25 Honda Access Corp 遠隔制御スイッチ
US8109149B2 (en) 2004-11-17 2012-02-07 Lawrence Livermore National Security, Llc Contact stress sensor
US7273979B2 (en) 2004-12-15 2007-09-25 Edward Lee Christensen Wearable sensor matrix system for machine control
US7619616B2 (en) 2004-12-21 2009-11-17 Microsoft Corporation Pressure sensitive controls
EP4177708B1 (en) 2005-03-04 2025-01-29 Apple Inc. Multi-functional hand-held device
EP1707931B1 (en) 2005-03-31 2013-03-27 STMicroelectronics Srl Analog data-input device provided with a microelectromechanical pressure sensor
US20060244733A1 (en) 2005-04-28 2006-11-02 Geaghan Bernard O Touch sensitive device and method using pre-touch information
US7318349B2 (en) 2005-06-04 2008-01-15 Vladimir Vaganov Three-axis integrated MEMS accelerometer
JP2006345209A (ja) 2005-06-08 2006-12-21 Sony Corp 入力装置、情報処理装置、情報処理方法、及びプログラム
US20060284856A1 (en) 2005-06-10 2006-12-21 Soss David A Sensor signal conditioning in a force-based touch device
US7903090B2 (en) 2005-06-10 2011-03-08 Qsi Corporation Force-based input device
US7337085B2 (en) 2005-06-10 2008-02-26 Qsi Corporation Sensor baseline compensation in a force-based touch device
JP4203051B2 (ja) 2005-06-28 2008-12-24 本田技研工業株式会社 力覚センサ
US20070035525A1 (en) 2005-08-11 2007-02-15 Via Technologies, Inc. Integrated touch screen control system for automobiles
EP1915600A4 (en) 2005-08-19 2011-06-22 Silverbrook Res Pty Ltd ELECTRONIC PEN WITH FORCE REDIRECTION COUPLING
US8081165B2 (en) 2005-08-30 2011-12-20 Jesterrad, Inc. Multi-functional navigational device and method
US7571647B2 (en) 2005-08-30 2009-08-11 Oki Semiconductor Co., Ltd. Package structure for an acceleration sensor
US7303935B2 (en) 2005-09-08 2007-12-04 Teledyne Licensing, Llc High temperature microelectromechanical (MEM) devices and fabrication method
US20070070046A1 (en) 2005-09-21 2007-03-29 Leonid Sheynblat Sensor-based touchscreen assembly, handheld portable electronic device having assembly, and method of determining touch location on a display panel
WO2007037926A2 (en) 2005-09-23 2007-04-05 Sharp Laboratories Of America, Inc. Mems pixel sensor
KR101226440B1 (ko) 2005-09-26 2013-01-28 삼성디스플레이 주식회사 표시패널, 이를 구비한 표시장치 및 표시장치의 터치 위치검출방법
US7649522B2 (en) 2005-10-11 2010-01-19 Fish & Richardson P.C. Human interface input acceleration system
US7280097B2 (en) 2005-10-11 2007-10-09 Zeetoo, Inc. Human interface input acceleration system
US20070085837A1 (en) 2005-10-17 2007-04-19 Eastman Kodak Company Touch input device with display front
KR101244300B1 (ko) 2005-10-31 2013-03-18 삼성전자주식회사 이동통신단말기에서 수서데이터를 인식하여 전송하기 위한장치 및 방법
US9001045B2 (en) 2005-11-08 2015-04-07 Nokia Corporation Cost efficient element for combined piezo sensor and actuator in robust and small touch screen realization and method for operation thereof
EP1788473A1 (de) 2005-11-18 2007-05-23 Siemens Aktiengesellschaft Eingabevorrichtung
US20070115265A1 (en) 2005-11-21 2007-05-24 Nokia Corporation Mobile device and method
CN1979371B (zh) 2005-12-10 2010-11-10 鸿富锦精密工业（深圳）有限公司 具有锁定功能的输入装置及其锁定方法
US20070137901A1 (en) 2005-12-16 2007-06-21 E-Lead Electronic Co., Ltd. Micro-keyboard simulator
US20070152959A1 (en) 2005-12-29 2007-07-05 Sap Ag Pressure-sensitive button
CA2615711C (en) 2006-01-05 2012-03-20 Vladimir Vaganov Three-dimensional force input control device and fabrication
JP4799237B2 (ja) 2006-03-27 2011-10-26 三洋電機株式会社 変位検出センサ、変位検出装置及び端末装置
US20070235231A1 (en) 2006-03-29 2007-10-11 Tekscan, Inc. Control circuit for sensor array and related methods
US8497757B2 (en) 2006-04-26 2013-07-30 Kulite Semiconductor Products, Inc. Method and apparatus for preventing catastrophic contact failure in ultra high temperature piezoresistive sensors and transducers
US7426873B1 (en) 2006-05-04 2008-09-23 Sandia Corporation Micro electro-mechanical system (MEMS) pressure sensor for footwear
CN101454895B (zh) 2006-05-22 2012-12-19 弗拉多米尔·瓦格诺夫 半导体输入控制装置
US7791151B2 (en) 2006-05-24 2010-09-07 Vladimir Vaganov Force input control device and method of fabrication
US7508040B2 (en) 2006-06-05 2009-03-24 Hewlett-Packard Development Company, L.P. Micro electrical mechanical systems pressure sensor
JP5545281B2 (ja) 2006-06-13 2014-07-09 株式会社デンソー 力学量センサ
US8237537B2 (en) 2006-06-15 2012-08-07 Kulite Semiconductor Products, Inc. Corrosion-resistant high temperature pressure transducer employing a metal diaphragm
FR2903207B1 (fr) 2006-06-28 2008-11-07 Jazzmutant Soc Par Actions Sim Capteur tactile multipoint a matrice active
US8269725B2 (en) 2006-06-28 2012-09-18 Microsoft Corporation Input simulation system for touch based devices
US20080007532A1 (en) 2006-07-05 2008-01-10 E-Lead Electronic Co., Ltd. Touch-sensitive pad capable of detecting depressing pressure
US7969418B2 (en) 2006-11-30 2011-06-28 Cherif Atia Algreatly 3-D computer input device and method
US20080024454A1 (en) 2006-07-31 2008-01-31 Paul Everest Three-dimensional touch pad input device
US20080030482A1 (en) 2006-07-31 2008-02-07 Elwell James K Force-based input device having an elevated contacting surface
JP2008033739A (ja) 2006-07-31 2008-02-14 Sony Corp 力覚フィードバックおよび圧力測定に基づくタッチスクリーンインターラクション方法および装置
JP5243704B2 (ja) 2006-08-24 2013-07-24 本田技研工業株式会社 力覚センサ
WO2008030594A2 (en) 2006-09-09 2008-03-13 F-Origin, Inc. Integrated pressure sensitive lens assembly
US7594440B2 (en) 2006-10-05 2009-09-29 Endevco Corporation Highly sensitive piezoresistive element
US20080088600A1 (en) 2006-10-11 2008-04-17 Apple Inc. Method and apparatus for implementing multiple push buttons in a user input device
US20080106523A1 (en) 2006-11-07 2008-05-08 Conrad Richard H Ergonomic lift-clicking method and apparatus for actuating home switches on computer input devices
US7503221B2 (en) 2006-11-08 2009-03-17 Honeywell International Inc. Dual span absolute pressure sense die
EP2085253B1 (en) 2006-11-14 2020-07-08 Kabushiki Kaisha Bridgestone Tires with sensor and methods for measuring tire strain amount
JP2008158909A (ja) 2006-12-25 2008-07-10 Pro Tech Design Corp 触覚フィードバックコントローラ
US8250921B2 (en) 2007-07-06 2012-08-28 Invensense, Inc. Integrated motion processing unit (MPU) with MEMS inertial sensing and embedded digital electronics
US10437459B2 (en) 2007-01-07 2019-10-08 Apple Inc. Multitouch data fusion
JP4345820B2 (ja) 2007-01-22 2009-10-14 セイコーエプソン株式会社 表示装置及び表示装置の製造方法並びに電子ペーパー
KR100891099B1 (ko) 2007-01-25 2009-03-31 삼성전자주식회사 사용성을 향상시키는 터치 스크린 및 터치 스크린에서 사용성 향상을 위한 방법
DE102008000128B4 (de) 2007-01-30 2013-01-03 Denso Corporation Halbleitersensorvorrichtung und deren Herstellungsverfahren
JP4909104B2 (ja) 2007-01-31 2012-04-04 本田技研工業株式会社 力覚センサ
WO2008095139A2 (en) 2007-01-31 2008-08-07 Perceptive Pixel, Inc. Methods of interfacing with multi-point input devices and multi-point input systems employing interfacing techniques
JP4927159B2 (ja) 2007-03-01 2012-05-09 シャープ株式会社 表示パネル用基板、表示パネル、表示装置、および表示パネル用基板の製造方法
KR101359921B1 (ko) 2007-03-02 2014-02-07 삼성디스플레이 주식회사 표시 장치
WO2008110227A1 (de) 2007-03-14 2008-09-18 Axsionics Ag Druckmessvorrichtung und entsprechendes verfahren
US20080238884A1 (en) 2007-03-29 2008-10-02 Divyasimha Harish Edge sensors forming a touchscreen
US20080259046A1 (en) 2007-04-05 2008-10-23 Joseph Carsanaro Pressure sensitive touch pad with virtual programmable buttons for launching utility applications
US7973778B2 (en) 2007-04-16 2011-07-05 Microsoft Corporation Visual simulation of touch pressure
US8120586B2 (en) 2007-05-15 2012-02-21 Htc Corporation Electronic devices with touch-sensitive navigational mechanisms, and associated methods
JP2008305174A (ja) 2007-06-07 2008-12-18 Sony Corp 情報処理装置、情報処理方法、プログラム
JP4368392B2 (ja) 2007-06-13 2009-11-18 東海ゴム工業株式会社 変形センサシステム
KR101382557B1 (ko) 2007-06-28 2014-04-08 삼성디스플레이 주식회사 표시 장치
FR2918747A1 (fr) 2007-07-12 2009-01-16 St Microelectronics Sa Microcapteur de pression
KR101395780B1 (ko) 2007-07-27 2014-05-16 삼성전자주식회사 촉각 감지를 위한 압력 센서 어레이 장치 및 방법
US20090046110A1 (en) 2007-08-16 2009-02-19 Motorola, Inc. Method and apparatus for manipulating a displayed image
KR101386958B1 (ko) 2007-08-21 2014-04-18 삼성디스플레이 주식회사 터치위치 판별방법 및 이를 수행하기 위한 터치패널
WO2009027897A2 (en) 2007-08-27 2009-03-05 Koninklijke Philips Electronics N.V. Pressure sensor, sensor probe comprising a pressure sensor, medical apparatus comprising a sensor probe and a method of fabricating a sensor probe
US8026906B2 (en) 2007-09-07 2011-09-27 F-Origin, Inc. Integrated force sensitive lens and software
EP2040045B1 (en) 2007-09-20 2016-11-30 Azbil Corporation Flow sensor
US8098235B2 (en) 2007-09-28 2012-01-17 Immersion Corporation Multi-touch device having dynamic haptic effects
TWI352923B (en) 2007-09-29 2011-11-21 Htc Corp Method for determing pressed location of touch scr
US20090102805A1 (en) 2007-10-18 2009-04-23 Microsoft Corporation Three-dimensional object simulation using audio, visual, and tactile feedback
DE102007052008A1 (de) 2007-10-26 2009-04-30 Andreas Steinhauser Single- oder multitouchfähiger Touchscreen oder Touchpad bestehend aus einem Array von Drucksensoren sowie Herstellung solcher Sensoren
TWI417821B (zh) 2007-11-23 2013-12-01 Creator Technology Bv 具改進功能的電子裝置
US20090140985A1 (en) 2007-11-30 2009-06-04 Eric Liu Computing device that determines and uses applied pressure from user interaction with an input interface
JP4600468B2 (ja) 2007-12-10 2010-12-15 セイコーエプソン株式会社 半導体圧力センサ及びその製造方法、半導体装置並びに電子機器
US8803797B2 (en) 2008-01-18 2014-08-12 Microsoft Corporation Input through sensing of user-applied forces
US8004501B2 (en) 2008-01-21 2011-08-23 Sony Computer Entertainment America Llc Hand-held device with touchscreen and digital tactile pixels
US20090184936A1 (en) 2008-01-22 2009-07-23 Mathematical Inventing - Slicon Valley 3D touchpad
US20100127140A1 (en) 2008-01-23 2010-05-27 Gary Smith Suspension for a pressure sensitive touch display or panel
WO2009095954A2 (ja) 2008-01-31 2009-08-06 Appside Co., Ltd. データ入力装置、データ入力方法ならびにデータ入力プログラムおよびこれを記録した記録媒体
US8022933B2 (en) 2008-02-21 2011-09-20 Sony Corporation One button remote control with haptic feedback
CN102007465B (zh) 2008-02-28 2015-05-20 纽约大学 用于给处理器提供输入的方法和设备以及传感器垫
US9018030B2 (en) 2008-03-20 2015-04-28 Symbol Technologies, Inc. Transparent force sensor and method of fabrication
US20090237374A1 (en) 2008-03-20 2009-09-24 Motorola, Inc. Transparent pressure sensor and method for using
JP4687737B2 (ja) 2008-03-25 2011-05-25 株式会社デンソー 荷重センサ
EP2274668B1 (en) 2008-03-27 2011-12-07 Cryptera A/S A secure keypad system
US20090243998A1 (en) 2008-03-28 2009-10-01 Nokia Corporation Apparatus, method and computer program product for providing an input gesture indicator
US8169332B2 (en) 2008-03-30 2012-05-01 Pressure Profile Systems Corporation Tactile device with force sensitive touch input surface
KR101032632B1 (ko) 2008-04-01 2011-05-06 한국표준과학연구원 작용힘에 따른 사용자 인터페이스의 제공방법 및 기록매체
WO2009121227A1 (en) 2008-04-03 2009-10-08 Dong Li Method and apparatus for operating multi-object touch handheld device with touch sensitive display
US20090256807A1 (en) 2008-04-14 2009-10-15 Nokia Corporation User interface
US8384677B2 (en) 2008-04-25 2013-02-26 Research In Motion Limited Electronic device including touch-sensitive input surface and method of determining user-selected input
US8476809B2 (en) 2008-04-29 2013-07-02 Sand 9, Inc. Microelectromechanical systems (MEMS) resonators and related apparatus and methods
US7765880B2 (en) 2008-05-19 2010-08-03 Hong Kong Polytechnic University Flexible piezoresistive interfacial shear and normal force sensor and sensor array
TW200951597A (en) 2008-06-10 2009-12-16 Ind Tech Res Inst Functional device array with self-aligned electrode structures and fabrication methods thereof
TW200951793A (en) 2008-06-13 2009-12-16 Asustek Comp Inc Touch panel device and control method thereof
US8130207B2 (en) 2008-06-18 2012-03-06 Nokia Corporation Apparatus, method and computer program product for manipulating a device using dual side input devices
JP5106268B2 (ja) 2008-06-24 2012-12-26 富士通コンポーネント株式会社 タッチパネル
JP4885911B2 (ja) 2008-06-27 2012-02-29 京セラ株式会社 携帯端末
JP5604035B2 (ja) 2008-07-18 2014-10-08 本田技研工業株式会社 力覚センサユニット
KR101522974B1 (ko) 2008-07-22 2015-05-27 삼성전자주식회사 컨텐츠 관리 방법 및 그 전자기기
US20100220065A1 (en) 2009-02-27 2010-09-02 Research In Motion Limited Touch-sensitive display including a force-sensor and portable electronic device including same
JP5100556B2 (ja) 2008-07-30 2012-12-19 キヤノン株式会社 情報処理方法及び装置
US8492238B2 (en) 2008-08-14 2013-07-23 Board Of Regents, The University Of Texas System Method and apparatus for fabricating piezoresistive polysilicon by low-temperature metal induced crystallization
TWI381294B (zh) 2008-08-15 2013-01-01 Au Optronics Corp 觸碰感應裝置及其感應訊號處理方法
TWI366784B (en) 2008-08-21 2012-06-21 Au Optronics Corp Matrix sensing apparatus
US20100053087A1 (en) 2008-08-26 2010-03-04 Motorola, Inc. Touch sensors with tactile feedback
US9477342B2 (en) 2008-08-26 2016-10-25 Google Technology Holdings LLC Multi-touch force sensing touch-screen devices and methods
CN101685212B (zh) 2008-09-26 2012-08-29 群康科技(深圳)有限公司 液晶显示面板
WO2010036050A2 (en) 2008-09-26 2010-04-01 Lg Electronics Inc. Mobile terminal and control method thereof
KR20100036850A (ko) 2008-09-30 2010-04-08 삼성전기주식회사 접촉 감지 센서를 이용한 터치 패널 장치
TWI372994B (en) 2008-10-21 2012-09-21 Altek Corp Pressure detection module, and touch panel with pressure detection module
DE102008043084A1 (de) 2008-10-22 2010-04-29 Robert Bosch Gmbh Verfahren zum Erzeugen von monokristallinen Piezowiderständen und Drucksensorelemente mit solchen Piezowiderständen
JP4766101B2 (ja) 2008-11-10 2011-09-07 ソニー株式会社 触行動認識装置及び触行動認識方法、情報処理装置、並びにコンピューター・プログラム
TWI383312B (zh) 2008-11-13 2013-01-21 Orise Technology Co Ltd 接觸點檢測方法以及使用其之觸控面板
CN101738768B (zh) 2008-11-18 2012-12-19 深圳富泰宏精密工业有限公司 触摸屏及其制造方法
US20100123686A1 (en) 2008-11-19 2010-05-20 Sony Ericsson Mobile Communications Ab Piezoresistive force sensor integrated in a display
WO2010062901A1 (en) 2008-11-26 2010-06-03 Research In Motion Limited Touch-sensitive display method and apparatus
JP2010147268A (ja) 2008-12-19 2010-07-01 Yamaha Corp Ｍｅｍｓセンサおよびｍｅｍｓセンサの製造方法
US8427441B2 (en) 2008-12-23 2013-04-23 Research In Motion Limited Portable electronic device and method of control
TWI376624B (en) 2008-12-23 2012-11-11 Integrated Digital Tech Inc Force-sensing modules for light sensitive screens
TWI478016B (zh) 2008-12-24 2015-03-21 Prime View Int Co Ltd 觸控式顯示裝置及其製造方法
US9864513B2 (en) 2008-12-26 2018-01-09 Hewlett-Packard Development Company, L.P. Rendering a virtual input device upon detection of a finger movement across a touch-sensitive display
US8289288B2 (en) 2009-01-15 2012-10-16 Microsoft Corporation Virtual object adjustment via physical object detection
WO2011084229A2 (en) 2009-12-17 2011-07-14 Arizona Board Of Regents, For And On Behalf Of Arizona State University Embedded mems sensors and related methods
KR101637879B1 (ko) 2009-02-06 2016-07-08 엘지전자 주식회사 휴대 단말기 및 그 동작방법
US7775119B1 (en) 2009-03-03 2010-08-17 S3C, Inc. Media-compatible electrically isolated pressure sensor for high temperature applications
US8220330B2 (en) 2009-03-24 2012-07-17 Freescale Semiconductor, Inc. Vertically integrated MEMS sensor device with multi-stimulus sensing
US9046956B2 (en) 2009-04-22 2015-06-02 Mitsubishi Electric Corporation Position input apparatus that detects a position where a pressure is applied
WO2010122813A1 (ja) 2009-04-24 2010-10-28 京セラ株式会社 入力装置
US8508498B2 (en) 2009-04-27 2013-08-13 Empire Technology Development Llc Direction and force sensing input device
US8427503B2 (en) 2009-05-18 2013-04-23 Nokia Corporation Method, apparatus and computer program product for creating graphical objects with desired physical features for usage in animation
CN101893977B (zh) 2009-05-19 2012-07-25 北京京东方光电科技有限公司 触摸屏、彩膜基板及其制造方法
WO2010137046A1 (en) 2009-05-29 2010-12-02 Matteo Paolo Bogana Method for determining multiple touch inputs on a resistive touch screen and multiple touch controller
US9383881B2 (en) 2009-06-03 2016-07-05 Synaptics Incorporated Input device and method with pressure-sensitive layer
US8031518B2 (en) 2009-06-08 2011-10-04 Micron Technology, Inc. Methods, structures, and devices for reducing operational energy in phase change memory
WO2010146580A1 (en) 2009-06-14 2010-12-23 Micropointing Ltd. Finger-operated input device
US20100321319A1 (en) 2009-06-17 2010-12-23 Hefti Thierry Method for displaying and updating a view of a graphical scene in response to commands via a touch-sensitive device
KR101071672B1 (ko) 2009-06-23 2011-10-11 한국표준과학연구원 접촉힘 세기 또는 압력 세기를 감지하는 촉각센서가 구비된 조도 조절 가능한 전계 발광 소자, 이를 포함하는 평판표시장치, 이를 포함하는 휴대기기 키패드
US20100328229A1 (en) 2009-06-30 2010-12-30 Research In Motion Limited Method and apparatus for providing tactile feedback
US8310457B2 (en) 2009-06-30 2012-11-13 Research In Motion Limited Portable electronic device including tactile touch-sensitive input device and method of protecting same
TWI421741B (zh) 2009-07-01 2014-01-01 Au Optronics Corp 觸控面板及其感測方法
US8638315B2 (en) 2009-07-13 2014-01-28 Cherif Atia Algreatly Virtual touch screen system
US8120588B2 (en) 2009-07-15 2012-02-21 Sony Ericsson Mobile Communications Ab Sensor assembly and display including a sensor assembly
US8289290B2 (en) 2009-07-20 2012-10-16 Sony Ericsson Mobile Communications Ab Touch sensing apparatus for a mobile device, mobile device and method for touch operation sensing
US8378798B2 (en) 2009-07-24 2013-02-19 Research In Motion Limited Method and apparatus for a touch-sensitive display
JP2011028635A (ja) 2009-07-28 2011-02-10 Sony Corp 表示制御装置、表示制御方法およびコンピュータプログラム
US20110039602A1 (en) 2009-08-13 2011-02-17 Mcnamara Justin Methods And Systems For Interacting With Content On A Mobile Device
US8072437B2 (en) 2009-08-26 2011-12-06 Global Oled Technology Llc Flexible multitouch electroluminescent display
JP2011048696A (ja) 2009-08-27 2011-03-10 Kyocera Corp 入力装置
JP4672075B2 (ja) 2009-08-27 2011-04-20 京セラ株式会社 入力装置
US8363020B2 (en) 2009-08-27 2013-01-29 Symbol Technologies, Inc. Methods and apparatus for pressure-based manipulation of content on a touch screen
JP2011048669A (ja) 2009-08-27 2011-03-10 Kyocera Corp 入力装置
JP2011048606A (ja) 2009-08-27 2011-03-10 Kyocera Corp 入力装置
JP2011048685A (ja) 2009-08-27 2011-03-10 Kyocera Corp 入力装置
JP5482023B2 (ja) 2009-08-27 2014-04-23 ソニー株式会社 情報処理装置、情報処理方法、及びプログラム
JP2011048671A (ja) 2009-08-27 2011-03-10 Kyocera Corp 入力装置および入力装置の制御方法
KR20120049307A (ko) 2009-08-27 2012-05-16 교세라 가부시키가이샤 촉각제시장치 및 촉각제시장치의 제어방법
JP2011048686A (ja) 2009-08-27 2011-03-10 Kyocera Corp 入力装置
JP5304544B2 (ja) 2009-08-28 2013-10-02 ソニー株式会社 情報処理装置、情報処理方法、及びプログラム
JP5593655B2 (ja) 2009-08-31 2014-09-24 ソニー株式会社 情報処理装置、情報処理方法およびプログラム
JP2011053974A (ja) 2009-09-02 2011-03-17 Sony Corp 操作制御装置、操作制御方法およびコンピュータプログラム
JP5182260B2 (ja) 2009-09-02 2013-04-17 ソニー株式会社 操作制御装置、操作制御方法およびコンピュータプログラム
US8730199B2 (en) 2009-09-04 2014-05-20 Atmel Corporation Capacitive control panel
KR20110028834A (ko) 2009-09-14 2011-03-22 삼성전자주식회사 터치스크린을 구비한 휴대 단말기의 터치 압력을 이용한 사용자 인터페이스 제공 방법 및 장치
US8436806B2 (en) 2009-10-02 2013-05-07 Research In Motion Limited Method of synchronizing data acquisition and a portable electronic device configured to perform the same
US10068728B2 (en) 2009-10-15 2018-09-04 Synaptics Incorporated Touchpad with capacitive force sensing
US9709509B1 (en) * 2009-11-13 2017-07-18 MCube Inc. System configured for integrated communication, MEMS, Processor, and applications using a foundry compatible semiconductor process
JP5486271B2 (ja) 2009-11-17 2014-05-07 ラピスセミコンダクタ株式会社 加速度センサ、及び加速度センサの製造方法
JPWO2011065250A1 (ja) 2009-11-25 2013-04-11 アルプス電気株式会社 フォースセンサ
US8387464B2 (en) 2009-11-30 2013-03-05 Freescale Semiconductor, Inc. Laterally integrated MEMS sensor device with multi-stimulus sensing
CN101929898A (zh) 2009-12-01 2010-12-29 苏州扩达微电子有限公司 一种压力传感器件
US8605053B2 (en) 2009-12-02 2013-12-10 Analog Devices, Inc. Method and device for detecting user input
US8633916B2 (en) 2009-12-10 2014-01-21 Apple, Inc. Touch pad with force sensors and actuator feedback
US8570297B2 (en) 2009-12-14 2013-10-29 Synaptics Incorporated System and method for measuring individual force in multi-object sensing
EP2518462B1 (en) 2009-12-25 2019-07-24 Alps Alpine Co., Ltd. Force sensor and method of manufacturing the same
JP5750875B2 (ja) 2010-12-01 2015-07-22 ソニー株式会社 情報処理装置、情報処理方法及びプログラム
DE102010005792B3 (de) 2010-01-25 2011-06-16 Innovations-Transfer Uphoff Gmbh &.Co.Kg Druckkraftmesseinrichtung
US8669963B2 (en) 2010-02-03 2014-03-11 Interlink Electronics, Inc. Sensor system
DE102010002463A1 (de) 2010-03-01 2011-09-01 Robert Bosch Gmbh Mikromechanisches Drucksensorelement und Verfahren zu dessen Herstellung
DE102010012441B4 (de) 2010-03-23 2015-06-25 Bundesrepublik Deutschland, vertreten durch das Bundesministerium für Wirtschaft und Technologie, dieses vertreten durch den Präsidenten der Physikalisch-Technischen Bundesanstalt Millinewton-Mikrokraftmesser und Verfahren zum Herstellen eines Millinewton-Mikrokraftmessers
JP4979788B2 (ja) 2010-03-30 2012-07-18 株式会社菊池製作所 流量センサーおよび流量検出装置
TWI544458B (zh) 2010-04-02 2016-08-01 元太科技工業股份有限公司 顯示面板
CN201653605U (zh) 2010-04-09 2010-11-24 无锡芯感智半导体有限公司 一种基于硅硅键合的压力传感器
US20110267294A1 (en) 2010-04-29 2011-11-03 Nokia Corporation Apparatus and method for providing tactile feedback for user
US20110267181A1 (en) 2010-04-29 2011-11-03 Nokia Corporation Apparatus and method for providing tactile feedback for user
KR101084782B1 (ko) 2010-05-06 2011-11-21 삼성전기주식회사 터치스크린 장치
US8466889B2 (en) 2010-05-14 2013-06-18 Research In Motion Limited Method of providing tactile feedback and electronic device
US8854323B2 (en) 2010-05-20 2014-10-07 Panasonic Intellectual Property Corporation Of America Operating apparatus, operating method, program, recording medium, and integrated circuit
US8669946B2 (en) 2010-05-28 2014-03-11 Blackberry Limited Electronic device including touch-sensitive display and method of controlling same
US8435821B2 (en) 2010-06-18 2013-05-07 General Electric Company Sensor and method for fabricating the same
US10595748B2 (en) 2010-07-09 2020-03-24 The University Of Utah Research Foundation Systems, devices, and methods for providing foot loading feedback to patients and physicians during a period of partial weight bearing
US20120025337A1 (en) 2010-07-28 2012-02-02 Avago Technologies Wireless Ip (Singapore) Pte. Ltd Mems transducer device having stress mitigation structure and method of fabricating the same
DE102010033514A1 (de) 2010-08-05 2012-02-09 Gm Global Technology Operations Llc (N.D.Ges.D. Staates Delaware) Bedienelement zur Betätigung durch einen Benutzer und Bedienelementmodul
KR101187980B1 (ko) 2010-08-13 2012-10-05 삼성전기주식회사 햅틱 피드백 디바이스 및 이를 포함하는 전자 장치
JP5625612B2 (ja) 2010-08-19 2014-11-19 株式会社リコー 操作表示装置および操作表示方法
JP5573487B2 (ja) 2010-08-20 2014-08-20 ソニー株式会社 情報処理装置、プログラム及び操作制御方法
US8884910B2 (en) 2010-08-30 2014-11-11 Microsoft Corporation Resistive matrix with optimized input scanning
TWI564757B (zh) 2010-08-31 2017-01-01 萬國商業機器公司 具有觸控螢幕的電腦裝置與其操作方法及電腦可讀媒體
KR101739054B1 (ko) 2010-09-08 2017-05-24 삼성전자주식회사 디바이스상의 움직임 제어 방법 및 장치
TWI414478B (zh) 2010-09-09 2013-11-11 Domintech Co Ltd 可同時量測加速度及壓力之微機電感測器
US8283781B2 (en) 2010-09-10 2012-10-09 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device having pad structure with stress buffer layer
IT1402181B1 (it) 2010-09-13 2013-08-28 Fond Istituto Italiano Di Tecnologia Dispositivo microelettromeccanico elettro-attivo e relativo procedimento di rivelazione
TW201214237A (en) 2010-09-16 2012-04-01 Asustek Comp Inc Touch display device and control method thereof
CA2814183C (en) 2010-10-12 2018-07-10 New York University Apparatus for sensing utilizing tiles, sensor having a set of plates, object identification for multi-touch surfaces, and method
US20120092279A1 (en) 2010-10-18 2012-04-19 Qualcomm Mems Technologies, Inc. Touch sensor with force-actuated switched capacitor
US20120105367A1 (en) 2010-11-01 2012-05-03 Impress Inc. Methods of using tactile force sensing for intuitive user interface
US9262002B2 (en) 2010-11-03 2016-02-16 Qualcomm Incorporated Force sensing touch screen
CN102062662B (zh) 2010-11-05 2012-10-10 北京大学 一种单片集成SiC MEMS压力传感器及其制备方法
US10120446B2 (en) 2010-11-19 2018-11-06 Apple Inc. Haptic input device
US9223445B2 (en) 2010-12-02 2015-12-29 Atmel Corporation Position-sensing and force detection panel
US8375799B2 (en) 2010-12-10 2013-02-19 Honeywell International Inc. Increased sensor die adhesion
TW201227454A (en) 2010-12-31 2012-07-01 Hong-Da Liu An active array having the touchable sensing matrix unit and a display having the active array
US20120162122A1 (en) 2010-12-27 2012-06-28 3M Innovative Properties Company Force sensitive device with force sensitive resistors
US20120169609A1 (en) 2010-12-29 2012-07-05 Nokia Corporation Methods and apparatuses for facilitating content navigation
US20120169617A1 (en) 2011-01-04 2012-07-05 Nokia Corporation Controlling of user input device
US8297127B2 (en) 2011-01-07 2012-10-30 Honeywell International Inc. Pressure sensor with low cost packaging
JP2012145497A (ja) 2011-01-13 2012-08-02 Fanuc Ltd 静電容量式力センサ
KR20120086055A (ko) 2011-01-25 2012-08-02 삼성전기주식회사 터치 압력을 검출할 수 있는 터치 스크린 장치 및 이를 갖는 전자 장치
US8674961B2 (en) 2011-01-31 2014-03-18 National Semiconductor Corporation Haptic interface for touch screen in mobile device or other device
WO2012106799A1 (en) 2011-02-07 2012-08-16 The Governors Of The University Of Alberta Piezoresistive load sensor
US9389721B2 (en) 2011-02-09 2016-07-12 Apple Inc. Snap domes as sensor protection
US9035871B2 (en) 2011-02-11 2015-05-19 Blackberry Limited Input detecting apparatus, and associated method, for electronic device
US8402835B2 (en) 2011-02-16 2013-03-26 Silicon Microstructures, Inc. Compensation of stress effects on pressure sensor components
JP5419923B2 (ja) 2011-05-09 2014-02-19 三菱電機株式会社 センサー素子
JP5776334B2 (ja) 2011-05-31 2015-09-09 セイコーエプソン株式会社 応力検出素子、センサーモジュール、電子機器、及び把持装置
US20120319987A1 (en) 2011-06-15 2012-12-20 Synaptics Incorporated System and method for calibrating an input device
US8884892B2 (en) 2011-08-12 2014-11-11 Blackberry Limited Portable electronic device and method of controlling same
US8610684B2 (en) 2011-10-14 2013-12-17 Blackberry Limited System and method for controlling an electronic device having a touch-sensitive non-display area
US20130096849A1 (en) 2011-10-14 2013-04-18 Nextinput Inc. Force Sensitive Interface Device and Methods of Using Same
WO2013067548A1 (en) 2011-11-06 2013-05-10 Khandani Mehdi Kalantari System and method for strain and acoustic emission monitoring
US9097600B2 (en) 2011-11-06 2015-08-04 Mehdi Kalantari Khandani System and method for strain and acoustic emission monitoring
US8436827B1 (en) 2011-11-29 2013-05-07 Google Inc. Disambiguating touch-input based on variation in characteristic such as speed or pressure along a touch-trail
FR2983955B1 (fr) 2011-12-09 2014-10-03 Openfield Capteur de pression pour fluide
US9728652B2 (en) 2012-01-25 2017-08-08 Infineon Technologies Ag Sensor device and method
JP5177311B1 (ja) 2012-02-15 2013-04-03 オムロン株式会社 静電容量型センサ及びその製造方法
EP2637007B1 (en) 2012-03-08 2020-01-22 ams international AG MEMS capacitive pressure sensor
JP5701807B2 (ja) * 2012-03-29 2015-04-15 株式会社東芝 圧力センサ及びマイクロフォン
ITMI20120912A1 (it) 2012-05-25 2013-11-26 St Microelectronics Srl Package in materiale edilizio per dispositivo di monitoraggio di parametri, all'interno di una struttura solida, e relativo dispositivo.
US9487388B2 (en) 2012-06-21 2016-11-08 Nextinput, Inc. Ruggedized MEMS force die
US8833172B2 (en) 2012-06-27 2014-09-16 Continental Automotive Systems, Inc Pressure sensing device with stepped cavity to minimize thermal noise
WO2014008377A1 (en) 2012-07-05 2014-01-09 Ian Campbell Microelectromechanical load sensor and methods of manufacturing the same
KR101971945B1 (ko) 2012-07-06 2019-04-25 삼성전자주식회사 촉각 측정 장치 및 방법
US9886116B2 (en) 2012-07-26 2018-02-06 Apple Inc. Gesture and touch input detection through force sensing
KR101934310B1 (ko) 2012-08-24 2019-01-03 삼성디스플레이 주식회사 터치 힘을 인식하는 터치 표시장치
CN102853950B (zh) 2012-09-10 2015-03-11 厦门海合达电子信息有限公司 采用倒装焊接的压阻式压力传感器芯片及其制备方法
DE102013014881B4 (de) * 2012-09-12 2023-05-04 Fairchild Semiconductor Corporation Verbesserte Silizium-Durchkontaktierung mit einer Füllung aus mehreren Materialien
CN102998037B (zh) 2012-09-15 2014-11-12 华东光电集成器件研究所 介质隔离压阻式压力传感器及其制备方法
US8984951B2 (en) 2012-09-18 2015-03-24 Kulite Semiconductor Products, Inc. Self-heated pressure sensor assemblies
US8904876B2 (en) 2012-09-29 2014-12-09 Stryker Corporation Flexible piezocapacitive and piezoresistive force and pressure sensors
JP2014085206A (ja) 2012-10-23 2014-05-12 Denso Corp 圧力センサ装置およびその製造方法
US20140283604A1 (en) * 2012-10-26 2014-09-25 The Regents Of The University Of Michigan Three-dimensional microelectromechanical systems structure
TWI506278B (zh) 2012-12-06 2015-11-01 Murata Manufacturing Co High Voltage Resistive MEMS Sensors
ITMI20122241A1 (it) 2012-12-27 2014-06-28 St Microelectronics Srl Dispositivo elettronico integrato per il monitoraggio di sforzo meccanico all'interno di una struttura solida
US9138170B2 (en) 2013-02-13 2015-09-22 Board Of Regents, The University Of Texas System Sensor assembly, method, and device for monitoring shear force and pressure on a structure
US9846091B2 (en) 2013-03-12 2017-12-19 Interlink Electronics, Inc. Systems and methods for press force detectors
US9574954B2 (en) 2013-03-12 2017-02-21 Interlink Electronics, Inc. Systems and methods for press force detectors
US9625333B2 (en) 2013-03-15 2017-04-18 President And Fellows Of Harvard College Tactile sensor
ITMI20130482A1 (it) 2013-03-29 2014-09-30 St Microelectronics Srl Dispositivo elettronico integrato per il monitoraggio di pressione all'interno di una struttura solida
CN105308463A (zh) 2013-06-04 2016-02-03 株式会社村田制作所 加速度传感器
US9143057B1 (en) 2013-06-07 2015-09-22 Qualtre, Inc. Method and apparatus for controlling Q losses through force distributions
JP6092044B2 (ja) 2013-08-19 2017-03-08 ミネベアミツミ株式会社 荷重センサユニット
DE102013110376A1 (de) 2013-09-19 2015-03-19 Endress + Hauser Gmbh + Co. Kg Messgerät mit einem Halbleitersensor und einem metallischen Stützkörper
US9332369B2 (en) * 2013-10-22 2016-05-03 Infineon Technologies Ag System and method for automatic calibration of a transducer
ITTO20130931A1 (it) 2013-11-15 2015-05-16 St Microelectronics Srl Sensore di forza microelettromeccanico di tipo capacitivo e relativo metodo di rilevamento di forza
JP6066490B2 (ja) 2013-12-06 2017-01-25 ミネベア株式会社 荷重センサ
US9366588B2 (en) 2013-12-16 2016-06-14 Lifescan, Inc. Devices, systems and methods to determine area sensor
US9902611B2 (en) * 2014-01-13 2018-02-27 Nextinput, Inc. Miniaturized and ruggedized wafer level MEMs force sensors
AU2015100011B4 (en) 2014-01-13 2015-07-16 Apple Inc. Temperature compensating transparent force sensor
US9970831B2 (en) 2014-02-10 2018-05-15 Texas Instruments Incorporated Piezoelectric thin-film sensor
DE102014105861B4 (de) 2014-04-25 2015-11-05 Infineon Technologies Ag Sensorvorrichtung und Verfahren zum Herstellen einer Sensorvorrichtung
US20150362389A1 (en) 2014-06-17 2015-12-17 EZ as a Drink Productions, Inc. Pressure sensing apparatus
WO2016055007A1 (en) 2014-10-06 2016-04-14 Shenzhen Huiding Technology Co., Ltd. Self-capacitive fingerprint sensor with active amplified pixels
US9835515B2 (en) 2014-10-10 2017-12-05 Stmicroeletronics S.R.L. Pressure sensor with testing device and related methods
CN104535229B (zh) 2014-12-04 2017-06-06 广东省自动化研究所 基于压阻压电柔性传感器复合的压力检测装置及方法
US9726587B2 (en) 2015-01-30 2017-08-08 Stmicroelectronics S.R.L. Tensile stress measurement device with attachment plates and related methods
US9945884B2 (en) 2015-01-30 2018-04-17 Infineon Technologies Ag System and method for a wind speed meter
US9967679B2 (en) 2015-02-03 2018-05-08 Infineon Technologies Ag System and method for an integrated transducer and temperature sensor
CN106456954A (zh) 2015-02-13 2017-02-22 美德阿利克斯株式会社 微针的穿刺装置及微针贴片的敷贴装置
US9874459B2 (en) 2015-02-24 2018-01-23 The Regents Of The University Of Michigan Actuation and sensing platform for sensor calibration and vibration isolation
JP2017003355A (ja) 2015-06-08 2017-01-05 アイシン精機株式会社 荷重検出装置
CN107848788B (zh) 2015-06-10 2023-11-24 触控解决方案股份有限公司 具有容差沟槽的加固的晶圆级mems力传感器
TWI599764B (zh) 2015-10-19 2017-09-21 國立清華大學 多階感測元件
US10126193B2 (en) 2016-01-19 2018-11-13 Rosemount Aerospace Inc. Compact or miniature high temperature differential pressure sensor capsule
ITUB20160759A1 (it) 2016-02-15 2017-08-15 St Microelectronics Srl Sensore di pressione incapsulato in materiale elastomerico, e sistema includente il sensore di pressione
TWI580938B (zh) 2016-02-16 2017-05-01 智動全球股份有限公司 微機電力量感測器以及力量感測裝置
ITUB20160788A1 (it) 2016-02-16 2017-08-16 St Microelectronics Srl Unita' di rilevamento di pressione per sistemi di monitoraggio dello stato di integrita' strutturale
US10571348B2 (en) 2016-08-30 2020-02-25 Honeywell International Inc. Overforce control through sense die design
WO2018148510A1 (en) 2017-02-09 2018-08-16 Nextinput, Inc. Integrated piezoresistive and piezoelectric fusion force sensor
EP3580539A4 (en) 2017-02-09 2020-11-25 Nextinput, Inc. INTEGRATED DIGITAL FORCE SENSORS AND ASSOCIATED MANUFACTURING PROCESSES
IT201700019426A1 (it) 2017-02-21 2018-08-21 St Microelectronics Srl Sensore di forza/pressione microelettromeccanico scalabile piezoresistivo di tipo bulk
TWI627391B (zh) 2017-03-03 2018-06-21 智動全球股份有限公司 力量感測器
US10496209B2 (en) 2017-03-31 2019-12-03 Apple Inc. Pressure-based force and touch sensing
EP3655740A4 (en) * 2017-07-19 2021-07-14 Nextinput, Inc. STRESS TRANSFER STACKING IN MEMS FORCE SENSOR
US11423686B2 (en) 2017-07-25 2022-08-23 Qorvo Us, Inc. Integrated fingerprint and force sensor
US11243126B2 (en) 2017-07-27 2022-02-08 Nextinput, Inc. Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
WO2019079420A1 (en) 2017-10-17 2019-04-25 Nextinput, Inc. SHIFT TEMPERATURE COEFFICIENT COMPENSATION FOR FORCE SENSOR AND STRAIN GAUGE
US11385108B2 (en) 2017-11-02 2022-07-12 Nextinput, Inc. Sealed force sensor with etch stop layer
WO2019099821A1 (en) 2017-11-16 2019-05-23 Nextinput, Inc. Force attenuator for force sensor
CN110411614B (zh) 2018-04-27 2021-04-20 苏州明皜传感科技有限公司 力量传感器以及其制造方法
US10962427B2 (en) 2019-01-10 2021-03-30 Nextinput, Inc. Slotted MEMS force sensor
KR102180901B1 (ko) 2019-03-05 2020-11-19 김병곤 용이한 압력 분포 확인 구조를 갖는 압저항형 압력센서
US20220228971A1 (en) 2019-04-26 2022-07-21 National Institute For Materials Science Sensitive film for nanomechanical sensor using poly(2,6-diphenyl-p-phenylene oxide), nanomechanical sensor having said sensitive film, method for coating said sensitive film on nanomechanical sensor, and method for restoring sensitive film of said nanomechanical sensor
EP3973260A4 (en) 2019-05-21 2023-12-20 Nextinput, Inc. COMBINED NEAR AND MID INFRARED SENSOR IN A CHIP-SIZE HOUSING

Also Published As

Publication number Publication date
EP3580539A4 (en) 2020-11-25
US11255737B2 (en) 2022-02-22
EP3580539A1 (en) 2019-12-18
CN110494724A (zh) 2019-11-22
US20220268648A1 (en) 2022-08-25
CN116907693A (zh) 2023-10-20
US20190383676A1 (en) 2019-12-19
WO2018148503A1 (en) 2018-08-16
US11946817B2 (en) 2024-04-02

Similar Documents

Publication Publication Date Title
CN110494724B (zh) 集成数字力传感器和相关制造方法
US11808644B2 (en) Integrated piezoresistive and piezoelectric fusion force sensor
US11111135B2 (en) Methods and devices for microelectromechanical pressure sensors
US11946816B2 (en) Wafer bonded piezoresistive and piezoelectric force sensor and related methods of manufacture
US10486962B2 (en) Force sensor and manufacture method thereof
US20240247986A1 (en) Sealed force sensor with etch stop layer
JP5808339B2 (ja) リードフレームベースのパッケージに統合された可動要素を有するマイクロエレクトロメカニカルシステム
JP6256619B2 (ja) 改良された圧力センサ構造
US10466119B2 (en) Ruggedized wafer level MEMS force sensor with a tolerance trench
US12203819B2 (en) Temperature coefficient of offset compensation for force sensor and strain gauge
KR101753087B1 (ko) 미소 전자 기계 디바이스 및 제조 방법
TWI718373B (zh) 力量感測器以及其製造方法
US11137296B2 (en) Force sensor with MEMS-based device and force touching member

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant