CN110461484B - Substrate cleaning device - Google Patents
Substrate cleaning device Download PDFInfo
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- CN110461484B CN110461484B CN201780089141.7A CN201780089141A CN110461484B CN 110461484 B CN110461484 B CN 110461484B CN 201780089141 A CN201780089141 A CN 201780089141A CN 110461484 B CN110461484 B CN 110461484B
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- substrate
- chuck
- ultrasonic
- cleaning apparatus
- liquid
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
- G03F7/70908—Hygiene, e.g. preventing apparatus pollution, mitigating effect of pollution or removing pollutants from apparatus
- G03F7/70925—Cleaning, i.e. actively freeing apparatus from pollutants, e.g. using plasma cleaning
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/82—Auxiliary processes, e.g. cleaning or inspecting
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
- G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Epidemiology (AREA)
- Health & Medical Sciences (AREA)
- Public Health (AREA)
- Life Sciences & Earth Sciences (AREA)
- Atmospheric Sciences (AREA)
- Plasma & Fusion (AREA)
- Environmental & Geological Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Cleaning By Liquid Or Steam (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Detergent Compositions (AREA)
Abstract
A substrate cleaning apparatus includes a chuck assembly, at least one first nozzle (107, 207), and an ultrasonic or megasonic device (206, 306). The chuck assembly is configured to receive and clamp a substrate. The at least one first nozzle (107, 207) is configured to eject liquid onto a top surface of the substrate. The ultrasonic or megasonic device (206, 306) is configured to be disposed above a top surface of a substrate for providing ultrasonic or megasonic cleaning to the substrate. A gap is formed between the ultrasonic or megasonic device (206, 306) and the top surface of the substrate, the gap being sufficiently and continuously filled with liquid so that the entire bottom of the ultrasonic or megasonic device (206, 306) is always filled with liquid during cleaning.
Description
Technical Field
The present invention relates to a substrate cleaning apparatus, and more particularly, to a substrate cleaning apparatus that cleans a substrate such as a mask plate using ultrasonic or megasonic equipment.
Background
Although the development of semiconductor technology from the first transistor to date has been more than half a century, it is now still under a strong development which follows moore's law, i.e., the number of integrated chips doubles approximately every 18 months, and the size of semiconductor devices shrinks by 0.7 times every three years. Furthermore, the diameter of the semiconductor wafer reaches 300mm. The large size, thin line width, high precision, high efficiency, and low cost of IC production present an unprecedented challenge for semiconductor devices.
In the manufacture of semiconductor devices, multiple lithographic processes are an important component of such a process. The integrated circuit pattern on the mask is printed onto the semiconductor wafer by, for example, exposure and selective chemical etching. In the photolithography process, a mask plays an important role. Masks are high precision tools used for pattern transfer in the fabrication of semiconductor devices. Generally, the mask is reused. After the mask is reused many times, the mask may become dirty (residual resist, dust, fingerprints, etc.). Therefore, the mask needs to be cleaned. At nodes of 65nm and below, cleaning of the mask becomes more critical, and cleaning of the mask will affect the quality and yield of the semiconductor device. Currently, there are several methods to clean the mask. One is to clean the mask with surfactants and by hand scrubbing. The other method is to clean the mask plate by using acetone, ethanol and ultrapure water. And the mask plate is immersed by cleaning liquid and cleaned by combining ultrasonic oscillation. However, the effect of removing contaminants on the mask using the above-described methods is not ideal.
Disclosure of Invention
Accordingly, an object of the present invention is to provide a substrate cleaning apparatus capable of improving a cleaning effect of a substrate.
According to one embodiment of the present invention, a substrate cleaning apparatus includes a chuck assembly, at least one first nozzle, and an ultrasonic or megasonic device. The chuck assembly is configured to receive and clamp a substrate. The at least one first nozzle is configured to eject liquid onto a top surface of a substrate. The ultrasonic or megasonic device is configured to be disposed above a top surface of a substrate for providing ultrasonic or megasonic cleaning to the substrate. A gap is formed between the ultrasonic or megasonic device and the top surface of the substrate, which gap is sufficiently and continuously filled with liquid so that the entire bottom of the ultrasonic or megasonic device is always filled with liquid during cleaning.
In the present invention, a chuck assembly includes a chuck having a receiving cavity for holding a substrate. The mask is placed in the receiving cavity of the chuck so that the mask can be considered as part of the chuck. The bottom of the ultrasonic or megasonic device is opposite to the top surface of the mask plate and the top surface of the chuck, and the gaps between the ultrasonic or megasonic device and the top surfaces of the mask plate and the chuck are fully and continuously filled with liquid. The entire bottom of the ultrasonic or megasonic apparatus is always filled with liquid during the cleaning process. Ultrasonic or megasonic energy can be stably transferred to the top surface of the mask plate through the liquid. Therefore, the whole top surface of the mask plate receives uniform ultrasonic wave or megasonic wave power density distribution, and the cleaning effect of the mask plate is improved, particularly the cleaning effect of the edge of the mask plate is improved.
Drawings
Fig. 1 discloses a front view of a first embodiment of the substrate cleaning apparatus of the present invention.
Fig. 2 discloses a top view of the device shown in fig. 1.
Fig. 3 disclosesbase:Sub>A cross-sectional view alongbase:Sub>A-base:Sub>A in fig. 2.
Fig. 4 discloses a perspective view of the device shown in fig. 1.
Fig. 5 discloses an enlarged view of the area B in fig. 4.
Fig. 6 discloses a perspective view of the clamp.
Fig. 7 discloses a perspective view of an apparatus for cleaning a mask.
Fig. 8 discloses an enlarged view of the C portion of fig. 7.
Fig. 9 discloses a top view of the apparatus for cleaning a mask.
Fig. 10 discloses a cross-sectional view along D-D in fig. 9.
Figure 11 discloses a top view of an apparatus for cleaning a mask in combination with an ultrasonic or megasonic apparatus.
Fig. 12 discloses a front view of a second embodiment of a substrate cleaning apparatus according to the present invention.
Fig. 13 discloses a top view of the device of fig. 12.
Fig. 14 discloses a cross-sectional view along E-E in fig. 13.
Fig. 15 discloses a perspective view of the device shown in fig. 12.
Fig. 16 discloses a top view of an apparatus for cleaning a mask according to a second embodiment of the present invention.
Fig. 17 discloses a cross-sectional view along F-F in fig. 16.
Fig. 18 discloses a top view of a device for cleaning a mask in combination with an ultrasonic or megasonic device according to a second embodiment of the invention.
Figure 19 discloses a top view of a prior art apparatus for cleaning a mask in combination with an ultrasonic or megasonic apparatus.
Detailed Description
Referring to fig. 1 to 11, an apparatus for cleaning a substrate using an ultrasonic or megasonic apparatus according to a first embodiment of the present invention is disclosed. The substrate cleaning apparatus includes a chuck assembly for receiving and clamping a substrate. Specifically, the chuck assembly includes a chuck 101, a rotational shaft 102 fixed to the chuck 101, a rotational driver, a support pin 105, and a jig 104. The rotation shaft 102 is connected to a rotation driver. The rotary driver drives the rotary shaft 102 and the chuck 101 to rotate. Chuck 101 has a receiving cavity 1011 for holding a substrate, such as mask plate 103. The opening of the receiving cavity 1011 is substantially square in shape matching the shape of the mask 103. It should be appreciated that the shape of the opening of the receiving cavity 1011 matches the shape of the substrate, and is not limited to only the mask plate 103, nor to only a square shape. The chuck 101 has four vertical surfaces 1015, the four vertical surfaces 1015 being configured to form openings that receive the cavities 1011. Preferably, in order to facilitate the placement of the mask plate 103 in the receiving cavity 1011, the chuck 101 has four guide surfaces 1014, and the four guide surfaces 1014 are connected to four vertical surfaces 1015, respectively. Four clamps 104 are mounted on the chuck 101 at four corners of the receiving cavity 1011 for clamping the mask plate 103. As shown in fig. 6, each clamp 104 has a base 1041, and the base 1041 is fixed to the chuck 101. The base 1041 has an opening 1042 and a shaft 1043, the shaft 1043 transversely passes through the opening 1042 and both ends of the shaft 1043 are fixed on the base 1041. A clamping pin 1044 is suspended from the shaft 1043. The clamping pin 1044 is located at the opening 1042 and is capable of rotating about the shaft 1043. The top end of the clamping pin 1044 is provided with a right angle slot 1045 to match the angle of the mask plate 103. A weight is arranged inside the clamping pin 1044, and the weight is made of stainless steel. The density of the material used to make the clamping pin 1044 is lower than the density of the material used to make the weight. When the rotation speed of the chuck 101 is higher than the threshold, the clamp pin 1044 clamps the mask plate 103 by a centrifugal force. When the rotation speed of the chuck 101 is lower than the threshold, the clamping pin 1044 returns to the initial position by its own weight and releases the mask plate 103. Four support pins 105 are provided in the receiving cavity 1011 of the chuck 101 for supporting the mask plate 103. The four support pins 105 are located at the four corners of the receiving cavity 1011 and correspond to the four clamping pins 1044.
As shown in fig. 3, the bottom of the chuck 101 is provided with a plurality of drain holes 1012. The plurality of drain holes 1012 are in communication with the receiving cavity 1011. The plurality of drain holes 1012 are arranged in a circle. Each drain hole 1012 has a sloped surface that facilitates drainage of liquid within the receiving cavity 1011. The bottom of the chuck 101 in the receiving chamber 1011 is provided with an inclined surface 1013, which inclined surface 1013 assists the liquid to flow to the drain hole 1012.
When mask plate 103 is cleaned using the apparatus shown in fig. 1 to 11, the robot arm transfers mask plate 103 and places mask plate 103 in receiving cavity 1011 of chuck 101. A space between the sidewall of the mask 103 and the vertical surface 1015 of the chuck 101 facilitates the robot to place the mask 103 in the receiving chamber 1011 of the chuck 101. The spacing is in the range of 0.5mm to 2 mm. In general, it is not absolutely guaranteed that the robot arm can precisely place the mask plate 103 within the receiving cavity 1011 of the chuck 101, which means that the robot arm is perpendicular to the vertical surface 1015 of the chuck 101. The robot may be angled, but even so, the robot is still able to place mask plate 103 within receiving cavity 1011 of chuck 101. The deflection angle θ of the manipulator satisfies the equation:
here, d refers to a distance between the sidewall of the mask plate 103 and the vertical surface 1015 of the chuck 101, and a refers to a length of the edge of the mask plate 103.
The four support pins 105 support the mask plate 103. Preferably, the top surface of the mask plate 103 and the top surface of the chuck 101 are located on the same plane. It should be appreciated that the top surface of mask 103 and the top surface of chuck 101 may be located at different planes. The rotation driver drives the rotation shaft 102 and the chuck 101 to rotate, so that the four clamp pins 1044 clamp the mask plate 103 by a centrifugal force. Each corner of mask 103 is clamped and positioned within right-angle slot 1045. In this manner, mask plate 103 is held and positioned within receiving cavity 1011 of chuck 101. The at least one first nozzle 107 sprays liquid onto the top surface of the mask plate 103 to clean the top surface of the mask plate 103. An ultrasonic or megasonic device 106 is disposed above the top surface of the mask plate 103 and the top surface of the chuck 101 to provide ultrasonic or megasonic cleaning to the mask plate 103. A gap is formed between the ultrasonic or megasonic device 106 and the top surface of mask plate 103 and the top surface of chuck 101. The gap is sufficiently and continuously filled with liquid, so that ultrasonic or megasonic energy is stably transmitted to the top surface of the mask plate 103 through the liquid. Therefore, the entire top surface of the mask plate 103 receives a uniform ultrasonic or megasonic power density distribution. The liquid in the receiving chamber 1011 is discharged from a plurality of liquid discharge holes 1012.
Referring to fig. 12 to 18, an apparatus for cleaning a substrate using an ultrasonic or megasonic apparatus according to a second embodiment of the present invention is disclosed. The substrate cleaning apparatus includes a chuck 201 and a rotating shaft 202 fixed to the chuck 201. The rotation shaft 202 is connected to a rotation driver. The rotation driver rotates the rotation shaft 202 and the chuck 201. Chuck 201 has a receiving cavity 2011 for holding a substrate, such as mask 203. The opening shape of the receiving cavity 2011 is square to match the shape of the mask 203. It should be appreciated that the shape of the opening of the receiving cavity 2011 matches the shape of the substrate, and is not limited to mask 203, nor to square shapes. The chuck 201 has four vertical surfaces 2015 configured to form openings to receive cavities 2011. Preferably, to facilitate placement of the mask plate 203 within the receiving cavity 2011, the chuck 201 has four guide surfaces 2014, which are connected to four vertical surfaces 2015, respectively.
The rotation shaft 202 is hollow and fixed at the center of the bottom of the chuck 201. A through hole 2016 is provided in the center of the bottom of the chuck 201. The through hole 2016 communicates with the receiving cavity 2011 and the hollow rotating shaft 202. The second nozzle 210 passes through the through hole 2016 of the chuck 201 and the hollow rotation shaft 202 to clean the bottom surface of the mask plate 203. The tip of the second nozzle 210 passes through the through-hole 2016 of the chuck 201 and is received in the receiving cavity 2011. The bottom end of the second nozzle 210 passes through the hollow rotating shaft 202. The second nozzle 210 has three liquid passages 2101 extending from the bottom end of the second nozzle 210 to the top end of the second nozzle 210 and passing through the top end of the second nozzle 210 for spraying liquid onto the bottom surface of the mask 203, thereby cleaning the bottom surface of the mask 203. Corresponding to each liquid passage 2101, the bottom end of the second nozzle 210 is provided with an inlet 2102 for supplying liquid to the liquid passage 2101. It should be noted that the number of the liquid passages 2101 is not limited to three. Any number of liquid channels 2101 may be acceptable to meet the process requirements. During the cleaning process, the second nozzle 210 is not rotated. Compared with the apparatus of the first embodiment disclosed by the present invention, the apparatus of the second embodiment disclosed by the present invention realizes the cleaning of both sides of the mask plate 203.
Four clamps 204 are mounted on the chuck 201 at four corners of the receiving cavity 2011 for clamping the mask 203. Each clamp 204 has a base which is secured to the chuck 201. The base has an opening and a shaft, the shaft transversely passes through the opening and the both ends of shaft are fixed on the base. The clamping pin 2044 is suspended from the shaft. The clamping pin 2044 is located at the opening and is rotatable about the shaft. The top end of the clamping pin 2044 is provided with a right-angle groove to match the angle of the mask plate 203. The interior of the clamp pin 2044 is provided with a weight made of stainless steel. The clamping pin 2044 is made of a material that is less dense than the material from which the weight is made. When the rotation speed of the chuck 201 is higher than the threshold, the clamp pin 2044 clamps the mask plate 203 by centrifugal force. When the rotation speed of the chuck 201 is lower than the threshold, the clamp pin 2044 returns to the initial position by its own weight and releases the mask plate 203. Four support pins 205 are provided in the receiving cavity 2011 of the chuck 201 for supporting the mask plate 203. The four support pins 205 are located at the four corners of the receiving cavity 2011 and correspond to the four clamping pins 2044.
As shown in fig. 14, the bottom of the chuck 201 is provided with a plurality of drain holes 2012. The plurality of drain holes 2012 communicate with the receiving chamber 2011. The plurality of drain holes 2012 are arranged in a circle. Each drain hole 2012 has a sloped surface that facilitates the draining of liquid from the receiving cavity 2011. The bottom of the cartridge 201 in the receiving cavity 2011 is provided with an inclined surface 2013, which 2013 facilitates the flow of liquid to the drain hole 2012.
When the mask 203 is cleaned using the apparatus shown in fig. 12 to 18, the robot arm transfers the mask 203 and places the mask 203 in the receiving chamber 2011 of the chuck 201. A space between the sidewall of the mask 203 and the vertical surface 2015 of the chuck 201 facilitates placement of the mask 203 by the robot into the receiving cavity 2011 of the chuck 201. The spacing is in the range of 0.5mm to 2 mm. In general, there is no absolute guarantee that the robot will accurately place mask plate 203 in receiving cavity 2011 of chuck 201, which means that the robot is perpendicular to a vertical plane 2015 of chuck 201. The robot can be deflected an angle, but even then the robot can still place the mask 203 within the receiving cavity 2011 of the chuck 201. The deflection angle theta of the manipulator satisfies the equation:
where d denotes a distance between the sidewall of the mask plate 203 and the vertical surface 2015 of the chuck 201, and a denotes a length of the edge of the mask plate 203.
The four support pins 205 support the mask plate 203. Preferably, the top surface of the mask 203 and the top surface of the chuck 201 are located on the same plane. It should be appreciated that the top surface of mask 203 and the top surface of chuck 201 may be located at different planes. The rotation driver drives the hollow rotation shaft 202 and the chuck 201 to rotate, so that the clamp pin 2044 clamps the mask plate 203 by centrifugal force. Each corner of the mask 203 is clamped and positioned in a right-angle groove. In this manner, the mask 203 is held and positioned within the receiving cavity 2011 of the chuck 201. The at least one first nozzle 207 sprays liquid to the top surface of the mask 203 to clean the top surface of the mask 203. An ultrasonic or megasonic device 206 is disposed above the top surface of the mask plate 203 and the top surface of the chuck 201 for providing ultrasonic or megasonic cleaning to the mask plate 203. A gap is formed between the ultrasonic or megasonic device 206 and the top surface of the mask plate 203 and the top surface of the chuck 201. The gap is sufficiently and continuously filled with liquid, so that ultrasonic or megasonic energy is stably transmitted to the top surface of the mask plate 203 through the liquid. Therefore, the entire top surface of the mask plate 203 receives a uniform ultrasonic or megasonic power density distribution. The second nozzles 210 spray liquid onto the bottom surface of the mask 203 to clean the bottom surface of the mask 203. The liquid in the receiving chamber 2011 is drained through a plurality of drain holes 2012.
As shown in fig. 19, in the conventional apparatus for cleaning the mask 303 in combination with the ultrasonic or megasonic apparatus 306, the region a and the region B below the ultrasonic or megasonic apparatus 306 are intermittently filled with liquid during the cleaning process. For example, when ultrasonic or megasonic device 306 is at position A, the liquid substantially fills the gap between ultrasonic or megasonic device 306 and the top surface of mask 303, so region A and region B below ultrasonic or megasonic device 306 have liquid. However, when the ultrasonic or megasonic device 306 is in position B, regions a and B below the ultrasonic or megasonic device 306 are exposed to air and there is no liquid in regions a and B. The gas phase and the liquid phase alternate between the region a and the region B. Ultrasonic or megasonic energy is concentrated between the interface of the gas and liquid phases. The high ultrasonic or megasonic power generated by the concentration of energy risks damaging mask 303. In addition, when there is no liquid in region a and region B, ultrasonic or megasonic energy cannot be transmitted to the top surface of mask 303, whereas once region a and region B are filled with liquid, ultrasonic or megasonic energy is transmitted to the top surface of mask 303 through the liquid. This will result in a non-uniform energy density distribution of the ultrasonic or megasonic waves transmitted to the top surface of mask 303. In addition, unstable liquid transport can also result in turbulence, resulting in further non-uniform delivery of ultrasonic or megasonic energy.
To overcome the above problems, in the present invention, a mask is placed in a receiving cavity of a chuck, so the mask can be regarded as a part of the chuck. The size and shape of the chuck is not limited as long as the bottom of the ultrasonic or megasonic device is opposite to the top surface of the mask and the top surface of the chuck, and the gap between the ultrasonic or megasonic device and the top surfaces of the mask and the chuck is sufficiently and continuously filled with liquid. The entire bottom of the ultrasonic or megasonic apparatus is always filled with liquid during the cleaning process. Ultrasonic or megasonic energy is stably transferred to the top surface of the mask through the liquid. Therefore, the entire top surface of the mask receives a uniform ultrasonic or megasonic power density distribution, thereby improving the cleaning effect of the mask, particularly the cleaning effect of the edge of the mask.
The invention is not limited to the field of semiconductors. The present invention can be applied to, for example, the field of LCD (liquid crystal display) processing, the field of PCB (printed wiring board) processing, and the like, in addition to the semiconductor field.
In summary, the present invention has been described in detail with reference to the above embodiments and the accompanying drawings, so that those skilled in the art can implement the invention. The above-described embodiments are intended to illustrate the present invention, not to limit the present invention, and the scope of the present invention is defined by the claims. Variations on the number of elements described herein or substitutions of equivalent elements are intended to be within the scope of the present invention.
Claims (14)
1. A substrate cleaning apparatus, comprising:
a chuck assembly to receive and clamp a substrate, the chuck assembly including a chuck having a receiving cavity to hold the substrate;
at least one first nozzle spraying liquid to the top surfaces of the substrate and the chuck; and
an ultrasonic or megasonic device disposed above the top surface of the substrate and the chuck to provide ultrasonic or megasonic cleaning to the substrate, the ultrasonic or megasonic device and the top surface of the substrate and the chuck forming a gap therebetween that is substantially and continuously filled with liquid such that the entire bottom of the ultrasonic or megasonic device is always filled with liquid during cleaning.
2. The substrate cleaning apparatus of claim 1, wherein the chuck assembly comprises:
a rotating shaft fixed to the chuck;
the rotary driver is connected with the rotating shaft and drives the rotating shaft and the chuck to rotate;
support pins disposed in the receiving cavities of the chucks and supporting the substrate; and
a clamp mounted on the chuck for clamping the substrate;
wherein the ultrasonic or megasonic device is disposed above the top surface of the substrate and the top surface of the chuck to provide ultrasonic or megasonic cleaning to the substrate, the gap being formed between the ultrasonic or megasonic device and the top surfaces of the substrate and the chuck.
3. The substrate cleaning apparatus as claimed in claim 2, wherein the spin shaft is hollow and fixed to a bottom of the chuck, the chuck having a through hole formed at a bottom thereof, the through hole communicating with the receiving chamber and the spin shaft, and a second nozzle passing through the through hole of the chuck and the spin shaft to clean a bottom surface of the substrate.
4. A substrate cleaning apparatus according to claim 3, wherein the second nozzle has at least one liquid passage extending from a bottom end to a top end of the second nozzle and passing through the top end of the second nozzle to spray the liquid toward the bottom surface of the substrate.
5. The substrate cleaning apparatus according to claim 4, wherein a bottom end of the second nozzle is provided with an inlet for supplying the liquid to the liquid passage, corresponding to each liquid passage.
6. The substrate cleaning apparatus according to claim 2, wherein the chuck is provided at a bottom thereof with a plurality of drain holes communicating with the receiving chamber.
7. The substrate cleaning apparatus according to claim 6, wherein the bottom of the chuck in the receiving chamber is provided with an inclined surface which facilitates the liquid in the receiving chamber to flow to the drain hole.
8. The substrate cleaning apparatus according to claim 2, wherein each of the clamps has a clamp pin that clamps the substrate by centrifugal force.
9. The substrate cleaning apparatus of claim 1, wherein the receiving chamber has an opening shape matching a shape of the substrate.
10. The substrate cleaning apparatus according to claim 1, wherein the substrate is a mask plate and the opening shape of the receiving chamber is a square.
11. The substrate cleaning apparatus of claim 10, wherein four clamps are mounted on the chuck at four corners of the receiving chamber.
12. The substrate cleaning apparatus of claim 11, wherein each of the clamps has a clamping pin, and a right-angle groove is formed at a tip of the clamping pin to clamp a corner of a mask.
13. The substrate cleaning apparatus of claim 11, wherein four support pins are installed at four corners of the receiving chamber corresponding to the four clamps.
14. The substrate cleaning apparatus of claim 2, wherein the top surface of the substrate and the top surface of the chuck are located on the same plane.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2017/078732 WO2018176306A1 (en) | 2017-03-30 | 2017-03-30 | Substrate cleaning apparatus |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110461484A CN110461484A (en) | 2019-11-15 |
| CN110461484B true CN110461484B (en) | 2022-12-27 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201780089141.7A Active CN110461484B (en) | 2017-03-30 | 2017-03-30 | Substrate cleaning device |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US11298727B2 (en) |
| JP (1) | JP7056969B2 (en) |
| KR (1) | KR102415678B1 (en) |
| CN (1) | CN110461484B (en) |
| SG (1) | SG11201909037TA (en) |
| WO (1) | WO2018176306A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116494270B (en) * | 2023-06-29 | 2023-09-12 | 苏州安田丰科技有限公司 | Unloading manipulator is washd with going up to photomask version |
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Also Published As
| Publication number | Publication date |
|---|---|
| WO2018176306A1 (en) | 2018-10-04 |
| KR20190135022A (en) | 2019-12-05 |
| US11298727B2 (en) | 2022-04-12 |
| KR102415678B1 (en) | 2022-07-04 |
| JP7056969B2 (en) | 2022-04-19 |
| CN110461484A (en) | 2019-11-15 |
| US20210187563A1 (en) | 2021-06-24 |
| SG11201909037TA (en) | 2019-10-30 |
| JP2020516076A (en) | 2020-05-28 |
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