CN110389108A - A kind of detection method and device of monocrystalline silicon defect area - Google Patents
A kind of detection method and device of monocrystalline silicon defect area Download PDFInfo
- Publication number
- CN110389108A CN110389108A CN201910758941.4A CN201910758941A CN110389108A CN 110389108 A CN110389108 A CN 110389108A CN 201910758941 A CN201910758941 A CN 201910758941A CN 110389108 A CN110389108 A CN 110389108A
- Authority
- CN
- China
- Prior art keywords
- oxygen concentration
- silicon wafer
- interstitial oxygen
- defect area
- sample silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000007547 defect Effects 0.000 title claims abstract description 127
- 238000001514 detection method Methods 0.000 title claims abstract description 32
- 229910021421 monocrystalline silicon Inorganic materials 0.000 title claims abstract description 24
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 122
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 122
- 239000010703 silicon Substances 0.000 claims abstract description 121
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 87
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 87
- 239000001301 oxygen Substances 0.000 claims abstract description 87
- 238000010438 heat treatment Methods 0.000 claims abstract description 31
- 238000009826 distribution Methods 0.000 claims abstract description 24
- 239000002244 precipitate Substances 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 abstract description 17
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 235000012431 wafers Nutrition 0.000 description 56
- 239000013078 crystal Substances 0.000 description 10
- 125000004430 oxygen atom Chemical group O* 0.000 description 8
- 230000001376 precipitating effect Effects 0.000 description 5
- 238000004458 analytical method Methods 0.000 description 4
- 230000003647 oxidation Effects 0.000 description 4
- 238000007254 oxidation reaction Methods 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 2
- 238000010899 nucleation Methods 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000002356 laser light scattering Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N1/00—Sampling; Preparing specimens for investigation
- G01N1/28—Preparing specimens for investigation including physical details of (bio-)chemical methods covered elsewhere, e.g. G01N33/50, C12Q
- G01N1/44—Sample treatment involving radiation, e.g. heat
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N23/00—Investigating or analysing materials by the use of wave or particle radiation, e.g. X-rays or neutrons, not covered by groups G01N3/00 – G01N17/00, G01N21/00 or G01N22/00
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3572—Preparation of samples, e.g. salt matrices
Landscapes
- Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The present invention relates to silicon wafer manufacture field more particularly to a kind of detection method and device of monocrystalline silicon defect area.The detection method of monocrystalline silicon defect area are as follows: obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value；The sample silicon wafer is heat-treated, precipitates interstitial oxygen concentration in vacancy-like defects region forming core；Obtain the sample silicon wafer diametrically on the multiple test site the second interstitial oxygen concentration value；The difference of each test site the second interstitial oxygen concentration value and the first interstitial oxygen concentration value is calculated；The defect area shape appearance figure of sample silicon chip surface after obtaining heat treatment；The interstitial oxygen concentration difference for comparing the defect area shape appearance figure Yu the test site determines the vacancy-like defects region of the sample silicon wafer and the distribution of clearance type defect area.This method is able to detect the distribution of the defect area of monocrystalline silicon, simple and quick, can be used for feeding back in silicon ingot growth technique to produce zero defect monocrystalline silicon.
Description
Technical field
The present invention relates to silicon wafer manufacture field more particularly to a kind of detection method and device of monocrystalline silicon defect area.
Background technique
The large size single crystal silicon of 300mm or more is usually prepared using bavin formula vertical pulling method (Czochralski).The method
Specifically includes the following steps: high purity polycrystalline silicon is formed silicon solution in silica crucible, then seed crystal is submerged in silicon melt, is passed through
Seeding is crossed, neck, shouldering are received, the processes such as isodiametric growth and ending obtain monocrystal silicon；Using molding, polishing, the works such as cleaning
Sequence obtains silicon wafer.
Wherein, various grown-in defects can be generated during growing monocrystal silicon, such as during pulling of crystals, quartz
Oxygen atom in crucible can enter in silicon ingot, and be present between silicon atom with gap oxygen atom.According to different detections
Method, the fixed grown-in defects of monocrystalline silicon show themselves in that crystal grown-in defects (Crystal Originated Particle, COP),
Flow pattern defect (Flow Pattern Defect, FPD), laser light scattering chromatograph defect (Laser scattering
topography defect,LSTD)。
If the silicon wafer with crystal grown-in defects (COP) is applied in semiconductor devices, have for performance of semiconductor device
There is larger impact, such as: directly affect gate oxidation integrality (GOI).Therefore, it is necessary to a kind of methods to analyze the defects of silicon wafer
Distribution, to feed back in crystal pulling process, to control and avoid the bad of product.
Summary of the invention
The technical problem to be solved by the present invention is providing a kind of detection method and device of monocrystalline silicon defect area, the party
Method is able to detect the distribution of the defect area of monocrystalline silicon, simple and quick, can be used for feeding back in silicon ingot growth technique to produce nothing
Defect monocrystalline silicon.
The present invention provides a kind of detection methods of monocrystalline silicon defect area, comprising the following steps:
Obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value；
The sample silicon wafer is heat-treated, precipitates interstitial oxygen concentration in vacancy-like defects region forming core；
Obtain heat treatment after sample silicon wafer diametrically on the multiple test site the second interstitial oxygen concentration
Value；The difference of each test site the second interstitial oxygen concentration value and the first interstitial oxygen concentration value is calculated；
The defect area shape appearance figure of sample silicon chip surface after obtaining heat treatment；
The difference for comparing the interstitial oxygen concentration of the defect area shape appearance figure and the test site, determines the sample silicon
The vacancy-like defects region of piece and the distribution of clearance type defect area.
Preferably, it is described obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value packet
It includes:
Diametrical direction using infrared spectrometer along sample silicon wafer is scanned, obtain sample silicon wafer diametrically on
First interstitial oxygen concentration value of multiple test sites.
Preferably, it is described obtain heat treatment after sample silicon wafer diametrically on the multiple test site second
Interstitial oxygen concentration value includes:
Diametrical direction using infrared spectrometer along sample silicon wafer is scanned, and the sample silicon wafer after obtaining heat treatment is along straight
Second interstitial oxygen concentration value of the multiple test site on diameter direction.
Preferably, it is described to the sample silicon wafer carry out heat treatment include:
The sample silicon wafer is successively handled 4~6 hours under the conditions of 700~900 DEG C, under the conditions of 1000~1050 DEG C
Processing 10~17 hours.Preferably, it is described to the sample silicon wafer carry out heat treatment include:
The time that the sample silicon wafer is successively handled under the conditions of 1000~1050 DEG C is 4~6 hours, 700~900
DEG C condition is handled 4~6 hours, is handled 10~17 hours under the conditions of 1000~1050 DEG C.
Preferably, it is described to the sample silicon wafer carry out heat treatment include: by the sample silicon wafer successively 700~900
DEG C condition is handled 4~6 hours, and the time handled under the conditions of 1000~1050 DEG C is 4~6 hours, in 700~900 DEG C of conditions
Processing 4~6 hours, is handled 4~6 hours under the conditions of 1000~1050 DEG C.
Preferably, the defect area shape appearance figure for obtaining the sample silicon chip surface after heat treatment includes:
The defect area shape appearance figure of the sample silicon chip surface after heat treatment is obtained using X-ray scanning.
Preferably, the sample silicon wafer is made by slicing silicon ingots.
Preferably, the interstitial oxygen concentration difference of the defect area shape appearance figure and the test site determines
The vacancy-like defects region of the sample silicon wafer and the distribution of clearance type defect area, specifically include:
According to the sample defect area shape appearance figure, the defect area distribution situation of the sample silicon chip surface is determined；
Compare the interstitial oxygen concentration difference of each test site, the big test site of the difference of interstitial oxygen concentration is concentrated
Region be vacancy-like defects region, the region that the small test site of the difference of interstitial oxygen concentration is concentrated is clearance type defect area
Domain.
The present invention provides a kind of detection devices of monocrystalline defect silicon, comprising:
First module, for obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value
And the second interstitial oxygen concentration value；
Second module, for obtaining the defect area pattern of sample silicon chip surface；
Third module, for comparing the defect area of silicon chip surface and the interstitial oxygen concentration difference of the test site, really
Determine the distribution in vacancy-like defects region Yu clearance type defect area.
Compared with prior art, the present invention obtains the first interstitial oxygen concentration value of test site first, then carries out hot place
Reason, obtains the second interstitial oxygen concentration value of each test site.Since gap oxygen atom occurs in sky by diffusion and precipitating
Bit-type defect area, and the presence of clearance type defect area oxygen atom very close to each other, therefore after heat treatment, each test position
The growth degree of the interstitial oxygen concentration of point is different.Finally, utilizing the position of the different test site of interstitial oxygen concentration growth degree
With the shape appearance figure check analysis of defect area, so that it is determined that the vacancy-like defects region of sample silicon wafer and clearance type defect area
Distribution.Detection method of the present invention does not damage silicon wafer property, the distribution of simple and quick detection monocrystalline silicon defect area.
It can be used for feeding back in silicon ingot growth technique to produce zero defect monocrystalline silicon.
Detailed description of the invention
Fig. 1 is the defect distribution schematic diagram of monocrystalline silicon；
Fig. 2 is the flow chart of the detection method of the monocrystalline silicon defect area of one embodiment of the invention；
Fig. 3 is the flow chart of the detection method of the monocrystalline silicon defect area of another embodiment of the present invention.
Specific embodiment
To keep the technical problem to be solved in the present invention, technical solution and advantage clearer, below in conjunction with attached drawing and tool
Body embodiment is described in detail.
It finds after study, crystal growth condition can have an impact to the grown-in defects of crystal, and lack to the primary of crystal
It falls into influential parameter to include at least: the axial-temperature gradient (G) of pulling rate (V) and solid liquid interface.The two above parameters
Ratio V/G can determine the distribution of defect.
Referring to Fig. 1, when V/G is larger, the mainly vacancy-like defects region (the hereinafter referred to as area V) 11 of vacancy dominant,
When V/G is gradually reduced, oxidation induced stacking faults (Oxidation Induced Stacking Fault, OSF) 12 is formed,
It is understood that can be shown after carrying out certain thermal oxidation to silicon wafer with OSF ring, followed by vacancy-like defects size compared with
Small micro- area V 13.When V/G reaches near preset critical, it will form and promote the area Yang Xi (Pv) 14 and inhibit oxygen that area is precipitated
(Pi) 15, grown-in defects are nearly no detectable in the area Pv 14 and the area Pi 15.When V/G is smaller, mainly gap silicon is accounted for leading
Clearance type defect area (the hereinafter referred to as area I) 16.The area Pv 14 and the area Pi 15 are wherein referred to as no crystal defect region (COP-free
Area).
Embodiment of the invention discloses a kind of detection methods of monocrystalline silicon defect area, include the following steps, specific to join
See Fig. 2:
Obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value [Oi]0；
The sample silicon wafer is heat-treated, precipitates interstitial oxygen concentration in vacancy-like defects region forming core；
Obtain heat treatment after sample silicon wafer diametrically on the multiple test site the second interstitial oxygen concentration
It is worth [Oi]1；The difference △ of each test site the second interstitial oxygen concentration value and the first interstitial oxygen concentration value is calculated
[Oi]；
The defect area shape appearance figure of sample silicon chip surface after obtaining heat treatment；
The difference for comparing the interstitial oxygen concentration of the defect area shape appearance figure and the test site, determines the sample silicon
The vacancy-like defects region of piece and the distribution of clearance type defect area.
Below referring to Fig. 3, the detection method of monocrystalline silicon defect area is illustrated.
Step S1: obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value.
Preferably, the sample silicon wafer is made by slicing silicon ingots.The diameter of the sample silicon wafer can be 300 millimeters or more
Large-sized silicon wafers, or diameter is lower than 300 millimeters of silicon wafer.
In order to avoid the method for obtaining interstitial oxygen concentration causes to damage to sample silicon wafer, it is preferable that the acquisition sample silicon
Piece diametrically on the first interstitial oxygen concentration value of multiple test sites include: using infrared spectrometer along sample silicon wafer
Diametrical direction is scanned, obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value
[Oi]0。
Oxygen in silicon is mostly in interstitial site, and interstitial oxygen concentration is that have infrared-active, and concentration can be by room temperature Fu
1107cm in leaf infrared light (FTIR) spectrum-1Absorption peak indicates.The method that FTIR measures oxygen in silicon wafer is not only directly simple and right
Sample nondestructive is bad.
Step S2: being heat-treated the sample silicon wafer, precipitates interstitial oxygen concentration in vacancy-like defects region forming core.
It finds after study, the diffusion of interstitial oxygen concentration and precipitating all occur in primarily in vacancy-like defects area, clearance type defect area
Substantially the presence of oxygen very close to each other.Therefore, the present invention has selected heat-treating methods, makes interstitial oxygen concentration in vacancy-like defects region shape
Core precipitating.
Preferably, carrying out heat treatment to the sample silicon wafer includes:
The sample silicon wafer is successively handled 4~6 hours under the conditions of 700~900 DEG C, under the conditions of 1000~1050 DEG C
Processing 10~17 hours.
Processing under the conditions of 700~900 DEG C is used for the growth of oxygen precipitation.
Processing under the conditions of 1000~1050 DEG C for defect nucleation and becomes large-sized.
In order to make oxygen atom whole forming core, to improve the accuracy of detection, it is preferable that carry out hot place to the sample silicon wafer
Reason includes:
The time that the sample silicon wafer is successively handled under the conditions of 1000~1050 DEG C is 4~6 hours, 700~900
DEG C condition is handled 4~6 hours, is handled 10~17 hours under the conditions of 1000~1050 DEG C.
Or
The sample silicon wafer is successively handled 4~6 hours in 700~900 DEG C of conditions, under the conditions of 1000~1050 DEG C at
The time of reason is 4~6 hours, handles 4~6 hours in 700~900 DEG C of conditions, 4~6 are handled under the conditions of 1000~1050 DEG C
Hour.
By the heat treatment of above three stage or four-stage, gap oxygen atom is complete in vacancy-like defects region
Forming core precipitating.
Step S3: obtain heat treatment after sample silicon wafer diametrically on the multiple test site the second gap
Oxygen concentration value [Oi]1；The difference of each test site the second interstitial oxygen concentration value and the first interstitial oxygen concentration value is calculated
Value △ [Oi].
Preferably, it is described obtain the sample silicon wafer diametrically on the multiple test site the second interstitial oxygen concentration
Concentration value includes: that the diametrical direction using infrared spectrometer along sample silicon wafer is scanned, and obtains the sample silicon wafer diametrically
Second interstitial oxygen concentration value of the multiple test site on direction.
Test site in this step is identical as the test site in step S1.Second interstitial oxygen concentration of each test site is dense
Angle value subtracts the first interstitial oxygen concentration value, for the difference of the interstitial oxygen concentration of the test site.
Step S4: the defect area shape appearance figure of the sample silicon chip surface after obtaining heat treatment.
Preferably, the defect area shape appearance figure for obtaining the sample silicon chip surface after heat treatment includes: to be swept using X-ray
Retouch the defect area shape appearance figure of the sample silicon chip surface after obtaining heat treatment.
Sample silicon wafer after X-ray scanning heat treatment, only can determine that the region of silicon wafer existing defects, but not can determine that
The type of defect area.Therefore, interstitial oxygen concentration changing rule is obtained defect area pattern with X-ray scanning and mutually tied by the present invention
It closes, to determine the distribution of different type defect area.
Step S5: the difference of the interstitial oxygen concentration of the defect area shape appearance figure and the test site determines institute
State the vacancy-like defects region of sample silicon wafer and the distribution of clearance type defect area.
Preferably, it specifically includes:
According to the defect area shape appearance figure, the defect area distribution situation of the sample silicon chip surface after determining heat treatment；
Compare the interstitial oxygen concentration difference of each test site, the big test site of interstitial oxygen concentration difference is concentrated
Region is vacancy-like defects region, and the region that the small test site of interstitial oxygen concentration difference is concentrated is clearance type defect area.
In the present invention, occur in vacancy-like defects region due to gap oxygen atom by diffusion and precipitating, and gap
The presence of type defect area oxygen atom very close to each other, therefore after heat treatment, the increasing of the interstitial oxygen concentration of each test site
Long degree is different.Between test site the second interstitial oxygen concentration value and the first interstitial oxygen concentration value in vacancy-like defects region
Difference is greater than the difference between test site the second interstitial oxygen concentration value and the first interstitial oxygen concentration value in clearance type defect area
Value.Behind the major defect region for determining sample silicon wafer using the shape appearance figure of defect area, by the interstitial oxygen concentration of test site
Difference check analysis therewith, so that it is determined that the distribution in the vacancy-like defects region of sample silicon wafer and clearance type defect area.This hair
The bright detection method does not damage silicon wafer property, the distribution of simple and quick detection monocrystalline silicon defect area.It can be used for anti-
It presents in silicon ingot growth technique to produce zero defect monocrystalline silicon.
Test proves that the detection method used time of the invention is in 1~3 hour, accuracy in detection reaches 90% or more.
The embodiment of the present invention also discloses a kind of detection device of monocrystalline defect silicon, comprising:
First module, for obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value
And the second interstitial oxygen concentration value；
Second module, for obtaining the defect area pattern of sample silicon chip surface；
Third module, for comparing the defect area of silicon chip surface and the interstitial oxygen concentration difference of the test site, really
Determine the distribution in vacancy-like defects region Yu clearance type defect area.
It preferably, further include that sample silicon wafer obtains module.
Optionally, first module includes:
First acquisition unit, for obtaining test site the first interstitial oxygen concentration value；
Second acquisition unit, for obtaining test site the second interstitial oxygen concentration value.
First module is preferably infrared scanning equipment.
Second module, preferably X-ray scanning equipment.
In the embodiment of the present invention, the detection device of the monocrystalline defect silicon can detect rapidly the defects of monocrystalline silicon piece point
Cloth region, promotes defect analysis efficiency, and defect distribution in simple and quick analysis silicon wafer preferably controls and avoid product not
It is good.
The above description of the embodiment is only used to help understand the method for the present invention and its core ideas.It should be pointed out that pair
For those skilled in the art, without departing from the principle of the present invention, the present invention can also be carried out
Some improvements and modifications, these improvements and modifications also fall within the scope of protection of the claims of the present invention.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of detection method of monocrystalline silicon defect area, which comprises the following steps:
Obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value；
The sample silicon wafer is heat-treated, precipitates interstitial oxygen concentration in vacancy-like defects region forming core；
Obtain heat treatment after sample silicon wafer diametrically on the multiple test site the second interstitial oxygen concentration value；Meter
Calculation obtains the difference of each test site the second interstitial oxygen concentration value and the first interstitial oxygen concentration value；
The defect area shape appearance figure of sample silicon chip surface after obtaining heat treatment；
The difference for comparing the interstitial oxygen concentration of the defect area shape appearance figure and the test site, determines the sample silicon wafer
The distribution in vacancy-like defects region and clearance type defect area.
2. detection method according to claim 1, which is characterized in that it is described obtain sample silicon wafer diametrically on it is more
First interstitial oxygen concentration value of a test site includes:
Diametrical direction using infrared spectrometer along sample silicon wafer is scanned, obtain sample silicon wafer diametrically on it is multiple
First interstitial oxygen concentration value of test site.
3. detection method according to claim 1, which is characterized in that the sample silicon wafer obtained after being heat-treated is diametrically
Second interstitial oxygen concentration value of the multiple test site on direction includes:
Diametrical direction using infrared spectrometer along sample silicon wafer is scanned, and the sample silicon wafer after obtaining heat treatment is diametrically square
Second interstitial oxygen concentration value of upward the multiple test site.
4. detection method according to claim 1, which is characterized in that described to carry out heat treatment packet to the sample silicon wafer
It includes:
The sample silicon wafer is successively handled 4~6 hours under the conditions of 700~900 DEG C, is handled under the conditions of 1000~1050 DEG C
10~17 hours.
5. detection method according to claim 1, which is characterized in that described to carry out heat treatment packet to the sample silicon wafer
It includes:
The time that the sample silicon wafer is successively handled under the conditions of 1000~1050 DEG C is 4~6 hours, in 700~900 DEG C of items
Part is handled 4~6 hours, is handled 10~17 hours under the conditions of 1000~1050 DEG C.
6. detection method according to claim 1, which is characterized in that described to carry out heat treatment packet to the sample silicon wafer
It includes:
The sample silicon wafer is successively handled 4~6 hours in 700~900 DEG C of conditions, is handled under the conditions of 1000~1050 DEG C
Time is 4~6 hours, handles 4~6 hours in 700~900 DEG C of conditions, handles 4~6 hours under the conditions of 1000~1050 DEG C.
7. detection method according to claim 1, which is characterized in that the sample silicon chip surface obtained after heat treatment
Defect area shape appearance figure includes:
The defect area shape appearance figure of the sample silicon chip surface after heat treatment is obtained using X-ray scanning.
8. detection method according to claim 1, which is characterized in that the sample silicon wafer is made by slicing silicon ingots.
9. detection method according to claim 1, which is characterized in that the defect area shape appearance figure with it is described
The difference of the interstitial oxygen concentration of test site determines vacancy-like defects region and the clearance type defect area of the sample silicon wafer
Distribution, specifically includes:
According to the defect area shape appearance figure, the defect area distribution situation of the sample silicon chip surface after determining heat treatment；
Compare the difference of the interstitial oxygen concentration of each test site, the big test site of the difference of interstitial oxygen concentration is concentrated
Region is vacancy-like defects region, and the region that the small test site of the difference of interstitial oxygen concentration is concentrated is clearance type defect area.
10. a kind of detection device of monocrystalline defect silicon characterized by comprising
First module, for obtain sample silicon wafer diametrically on multiple test sites the first interstitial oxygen concentration value and
Second interstitial oxygen concentration value；
Second module, for obtaining the defect area pattern of sample silicon chip surface；
Third module determines empty for comparing the defect area of silicon chip surface and the interstitial oxygen concentration difference of the test site
The distribution of bit-type defect area and clearance type defect area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910758941.4A CN110389108A (en) | 2019-08-16 | 2019-08-16 | A kind of detection method and device of monocrystalline silicon defect area |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910758941.4A CN110389108A (en) | 2019-08-16 | 2019-08-16 | A kind of detection method and device of monocrystalline silicon defect area |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110389108A true CN110389108A (en) | 2019-10-29 |
Family
ID=68288972
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910758941.4A Pending CN110389108A (en) | 2019-08-16 | 2019-08-16 | A kind of detection method and device of monocrystalline silicon defect area |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110389108A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111174716A (en) * | 2019-11-13 | 2020-05-19 | 西安奕斯伟硅片技术有限公司 | Epitaxial layer thickness testing device and method |
| CN111380830A (en) * | 2020-04-30 | 2020-07-07 | 西安奕斯伟硅片技术有限公司 | Method for detecting defect type and distribution region of single crystal wafer |
| CN111781243A (en) * | 2020-06-16 | 2020-10-16 | 天津中环领先材料技术有限公司 | A kind of silicon wafer micro-defect testing method |
| CN113138195A (en) * | 2021-04-16 | 2021-07-20 | 上海新昇半导体科技有限公司 | Monitoring method of crystal defects and crystal bar growing method |
| CN114280078A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Batch evaluation method of BMD in single crystal silicon |
| CN114280072A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Method for detecting BMD in monocrystalline silicon body |
| CN116642914A (en) * | 2023-05-29 | 2023-08-25 | 山东有研半导体材料有限公司 | Detection method for micro defects of heavily arsenic-doped low-resistivity silicon single crystal |
Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4342616A (en) * | 1981-02-17 | 1982-08-03 | International Business Machines Corporation | Technique for predicting oxygen precipitation in semiconductor wafers |
| US5287167A (en) * | 1990-07-31 | 1994-02-15 | Toshiba Ceramics Co., Ltd. | Method for measuring interstitial oxygen concentration |
| US6048395A (en) * | 1997-11-21 | 2000-04-11 | Shin-Etsu Handotai Co., Ltd. | Method for producing a silicon single crystal having few crystal defects |
| US6174364B1 (en) * | 1998-01-19 | 2001-01-16 | Shin-Etsu Handotai Co., Ltd. | Method for producing silicon monocrystal and silicon monocrystal wafer |
| US6544490B1 (en) * | 1999-11-12 | 2003-04-08 | Shin-Etsu Handotai Co., Ltd. | Silicon wafer and production method thereof and evaluation method for silicon wafer |
| US20030106481A1 (en) * | 2001-12-06 | 2003-06-12 | Seh America, Inc. | High resistivity silicon wafer produced by a controlled pull rate czochralski method |
| US20040025782A1 (en) * | 1997-04-09 | 2004-02-12 | Memc Electronic Materials, Inc. | Process for producing low defect density, ideal oxygen precipitating silicon |
| CN1591781A (en) * | 2003-09-05 | 2005-03-09 | 海力士半导体有限公司 | Silicon wafers and method of fabricating the same |
| US20050183660A1 (en) * | 2004-02-23 | 2005-08-25 | Jun Furukawa | Method of identifying defect distribution in silicon single crystal ingot |
| US20060189169A1 (en) * | 2005-02-18 | 2006-08-24 | Naoshi Adachi | Method for heat treatment of silicon wafers |
| US20080075138A1 (en) * | 2006-09-25 | 2008-03-27 | Wee Sang-Wook | Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment |
| US20100290971A1 (en) * | 2009-05-15 | 2010-11-18 | Wataru Itou | Silicon wafer and method for producing the same |
| US20120043644A1 (en) * | 2009-03-25 | 2012-02-23 | Sumco Corporation | Silicon wafer and manufacturing method |
| CN103091277A (en) * | 2012-08-28 | 2013-05-08 | 河北工业大学 | Method for detecting organic contamination on surface of large-sized monocrystalline silicon wafer by infrared transmission |
| US20130323153A1 (en) * | 2011-03-08 | 2013-12-05 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal wafer |
| TW201627663A (en) * | 2014-10-22 | 2016-08-01 | Commissariat Energie Atomique | Method for characterizing the interstitial oxygen concentration in a semiconductor ingot |
-
2019
- 2019-08-16 CN CN201910758941.4A patent/CN110389108A/en active Pending
Patent Citations (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4342616A (en) * | 1981-02-17 | 1982-08-03 | International Business Machines Corporation | Technique for predicting oxygen precipitation in semiconductor wafers |
| US5287167A (en) * | 1990-07-31 | 1994-02-15 | Toshiba Ceramics Co., Ltd. | Method for measuring interstitial oxygen concentration |
| US20040025782A1 (en) * | 1997-04-09 | 2004-02-12 | Memc Electronic Materials, Inc. | Process for producing low defect density, ideal oxygen precipitating silicon |
| US6048395A (en) * | 1997-11-21 | 2000-04-11 | Shin-Etsu Handotai Co., Ltd. | Method for producing a silicon single crystal having few crystal defects |
| US6174364B1 (en) * | 1998-01-19 | 2001-01-16 | Shin-Etsu Handotai Co., Ltd. | Method for producing silicon monocrystal and silicon monocrystal wafer |
| US6544490B1 (en) * | 1999-11-12 | 2003-04-08 | Shin-Etsu Handotai Co., Ltd. | Silicon wafer and production method thereof and evaluation method for silicon wafer |
| US20030106481A1 (en) * | 2001-12-06 | 2003-06-12 | Seh America, Inc. | High resistivity silicon wafer produced by a controlled pull rate czochralski method |
| CN1591781A (en) * | 2003-09-05 | 2005-03-09 | 海力士半导体有限公司 | Silicon wafers and method of fabricating the same |
| US20050183660A1 (en) * | 2004-02-23 | 2005-08-25 | Jun Furukawa | Method of identifying defect distribution in silicon single crystal ingot |
| US20060189169A1 (en) * | 2005-02-18 | 2006-08-24 | Naoshi Adachi | Method for heat treatment of silicon wafers |
| US20080075138A1 (en) * | 2006-09-25 | 2008-03-27 | Wee Sang-Wook | Method of identifying crystal defect region in monocrystalline silicon using metal contamination and heat treatment |
| US20120043644A1 (en) * | 2009-03-25 | 2012-02-23 | Sumco Corporation | Silicon wafer and manufacturing method |
| US20100290971A1 (en) * | 2009-05-15 | 2010-11-18 | Wataru Itou | Silicon wafer and method for producing the same |
| US20130323153A1 (en) * | 2011-03-08 | 2013-12-05 | Shin-Etsu Handotai Co., Ltd. | Silicon single crystal wafer |
| CN103091277A (en) * | 2012-08-28 | 2013-05-08 | 河北工业大学 | Method for detecting organic contamination on surface of large-sized monocrystalline silicon wafer by infrared transmission |
| TW201627663A (en) * | 2014-10-22 | 2016-08-01 | Commissariat Energie Atomique | Method for characterizing the interstitial oxygen concentration in a semiconductor ingot |
Non-Patent Citations (5)
| Title |
|---|
| 任丙彦: "大直径CZSi单晶中微缺陷与间隙氧之间的关系", 《半导体材料与设备》 * |
| 刘玉岭: "《超大规模集成电路衬底材料性能及加工测试技术工程》", 31 August 2002 * |
| 席珍强等: "铸造多晶硅中氧的热处理行为研究", 《材料热处理学报》 * |
| 杨德仁: "硅中氧沉淀的研究", 《材料科学与工程学报》 * |
| 田达晰: "直拉单晶硅的晶体生长及缺陷研究", 《中国博士学位论文全文数据库》 * |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111174716A (en) * | 2019-11-13 | 2020-05-19 | 西安奕斯伟硅片技术有限公司 | Epitaxial layer thickness testing device and method |
| CN111380830A (en) * | 2020-04-30 | 2020-07-07 | 西安奕斯伟硅片技术有限公司 | Method for detecting defect type and distribution region of single crystal wafer |
| CN111781243A (en) * | 2020-06-16 | 2020-10-16 | 天津中环领先材料技术有限公司 | A kind of silicon wafer micro-defect testing method |
| CN113138195A (en) * | 2021-04-16 | 2021-07-20 | 上海新昇半导体科技有限公司 | Monitoring method of crystal defects and crystal bar growing method |
| CN114280078A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Batch evaluation method of BMD in single crystal silicon |
| CN114280072A (en) * | 2021-12-23 | 2022-04-05 | 宁夏中欣晶圆半导体科技有限公司 | Method for detecting BMD in monocrystalline silicon body |
| CN114280078B (en) * | 2021-12-23 | 2024-04-16 | 宁夏中欣晶圆半导体科技有限公司 | Batch evaluation method for BMD in monocrystalline silicon body |
| CN116642914A (en) * | 2023-05-29 | 2023-08-25 | 山东有研半导体材料有限公司 | Detection method for micro defects of heavily arsenic-doped low-resistivity silicon single crystal |
| CN116642914B (en) * | 2023-05-29 | 2024-02-13 | 山东有研半导体材料有限公司 | Detection method for micro defects of heavily arsenic-doped low-resistivity silicon single crystal |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110389108A (en) | A kind of detection method and device of monocrystalline silicon defect area | |
| KR101507360B1 (en) | Silicon wafer and method for manufacturing same | |
| US7828893B2 (en) | Silicon wafer and process for the heat treatment of a silicon wafer | |
| KR101272659B1 (en) | Method of manufacturing silicon single crystal, silicon single crystal ingot, and silicon wafer | |
| JP6724142B2 (en) | Silicon wafer with uniform radial oxygen variation | |
| JP5682471B2 (en) | Silicon wafer manufacturing method | |
| WO2002002852A1 (en) | Silicon single crystal wafer and method for manufacturing the same | |
| US20180247830A1 (en) | Method for manufacturing silicon wafer | |
| JP6574271B2 (en) | Wafer and wafer defect analysis method | |
| JP6484762B2 (en) | Single crystal silicon plate and manufacturing method thereof | |
| Kivambe et al. | Minority-carrier lifetime and defect content of n-type silicon grown by the noncontact crucible method | |
| TWI486493B (en) | Inspection method and fabricating method for silicon single crystal | |
| CN105917449B (en) | The heat treatment method of monocrystalline silicon wafer crystal | |
| JP5381558B2 (en) | Pulling method of silicon single crystal | |
| US20100052103A1 (en) | Silicon wafer and method for producing the same | |
| JP2005015296A (en) | Method for manufacturing single crystal, and single crystal | |
| JP2003243404A (en) | Method of manufacturing annealed wafer and annealed wafer | |
| JP2011222842A (en) | Manufacturing method for epitaxial wafer, epitaxial wafer, and manufacturing method for imaging device | |
| CN105900220B (en) | The heat treatment method of monocrystalline silicon wafer crystal | |
| TW200303041A (en) | Silicon epitaxial wafer and its production method | |
| US20230235479A1 (en) | Semiconductor wafer made of single-crystal silicon and process for the production thereof | |
| TWI654343B (en) | Method for growing monocrystalline silicon and monocrystalline silicon ingot prepared thereof (1) | |
| WO2004025001A1 (en) | Single crystal, single crystal wafer, epitaxial wafer and method of growing single crystal | |
| US8460463B2 (en) | Silicon wafer and method for producing the same | |
| JP2013175742A (en) | Epitaxial wafer manufacturing method, epitaxial wafer and imaging device manufacturing method |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20211026 Address after: 710000 room 1-3-029, No. 1888, Xifeng South Road, high tech Zone, Xi'an, Shaanxi Province Applicant after: Xi'an yisiwei Material Technology Co.,Ltd. Applicant after: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. Address before: Room 1323, block a, city gate, No.1 Jinye Road, high tech Zone, Xi'an, Shaanxi 710065 Applicant before: XI'AN ESWIN SILICON WAFER TECHNOLOGY Co.,Ltd. |
|
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20191029 |