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CN110350778A - Negative voltage generator and its negative voltage detector - Google Patents

Negative voltage generator and its negative voltage detector Download PDF

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Publication number
CN110350778A
CN110350778A CN201810889125.2A CN201810889125A CN110350778A CN 110350778 A CN110350778 A CN 110350778A CN 201810889125 A CN201810889125 A CN 201810889125A CN 110350778 A CN110350778 A CN 110350778A
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voltage
negative
circuit
type transistor
resistor
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CN110350778B (en
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王佳祥
印秉宏
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Guangzhou Tyrafos Semiconductor Technologies Co Ltd
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Tyrafos Technologies Co Ltd
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    • GPHYSICS
    • G01MEASURING; TESTING
    • G01BMEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00Measuring arrangements characterised by the use of optical techniques
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B27/00Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00
    • G02B27/28Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising
    • G02B27/281Optical systems or apparatus not provided for by any of the groups G02B1/00 - G02B26/00, G02B30/00 for polarising used for attenuating light intensity, e.g. comprising rotatable polarising elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • GPHYSICS
    • G02OPTICS
    • G02BOPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B5/00Optical elements other than lenses
    • G02B5/30Polarising elements
    • G02B5/3083Birefringent or phase retarding elements
    • GPHYSICS
    • G06COMPUTING; CALCULATING OR COUNTING
    • G06VIMAGE OR VIDEO RECOGNITION OR UNDERSTANDING
    • G06V10/00Arrangements for image or video recognition or understanding
    • G06V10/10Image acquisition
    • G06V10/12Details of acquisition arrangements; Constructional details thereof
    • G06V10/14Optical characteristics of the device performing the acquisition or on the illumination arrangements
    • G06V10/147Details of sensors, e.g. sensor lenses
    • GPHYSICS
    • G09EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09FDISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of DC power input into DC power output
    • H02M3/02Conversion of DC power input into DC power output without intermediate conversion into AC
    • H02M3/04Conversion of DC power input into DC power output without intermediate conversion into AC by static converters
    • H02M3/06Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/071Conversion of DC power input into DC power output without intermediate conversion into AC by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps adapted to generate a negative voltage output from a positive voltage source

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  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Theoretical Computer Science (AREA)
  • Health & Medical Sciences (AREA)
  • Power Engineering (AREA)
  • General Health & Medical Sciences (AREA)
  • Vascular Medicine (AREA)
  • Multimedia (AREA)
  • Dc-Dc Converters (AREA)
  • Length Measuring Devices By Optical Means (AREA)
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  • Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
  • Measurement Of The Respiration, Hearing Ability, Form, And Blood Characteristics Of Living Organisms (AREA)

Abstract

本发明提供一种负电压产生器及其负电压检测器。负电压产生器用以提供负参考电压。负电压产生器包括负电压检测器以及电压泵电路。负电压检测器包括第一电路、第二电路以及比较电路。第一电路用以接收负参考电压,且根据负参考电压产生第一电压。第二电路用以产生第二电压。比较电路耦接第一电路以接收第一电压,耦接第二电路以接收第二电压,且对第一电压及第二电压进行比较以产生控制信号。电压泵电路耦接负电压检测器以接收控制信号,且根据控制信号产生负参考电压。

The present invention provides a negative voltage generator and a negative voltage detector thereof. The negative voltage generator is used to provide a negative reference voltage. The negative voltage generator includes a negative voltage detector and a voltage pump circuit. The negative voltage detector includes a first circuit, a second circuit and a comparison circuit. The first circuit is used to receive a negative reference voltage and generate a first voltage according to the negative reference voltage. The second circuit is used to generate a second voltage. The comparison circuit is coupled to the first circuit to receive the first voltage, coupled to the second circuit to receive the second voltage, and compares the first voltage and the second voltage to generate a control signal. The voltage pump circuit is coupled to the negative voltage detector to receive the control signal and generates a negative reference voltage according to the control signal.

Description

负电压产生器及其负电压检测器Negative voltage generator and its negative voltage detector

技术领域technical field

本发明涉及一种电压产生装置,尤其涉及一种负电压产生器及其负电压检测器。The invention relates to a voltage generating device, in particular to a negative voltage generator and a negative voltage detector thereof.

背景技术Background technique

一般的负电压产生器都是先产生正值的设定电压,再通过其负泵电路将此正值的设定电压转换为负值的参考电压,以在其输出端提供负参考电压,其中负参考电压的电压绝对值等于设定电压的电压值。然而,上述的负电压产生器所产生的负参考电压的安定时间(settling time)会很长。此外,即使在安定时间之后,上述的负电压产生器内仍存在突波电流(spike current)。A general negative voltage generator first generates a positive set voltage, and then converts the positive set voltage into a negative reference voltage through its negative pump circuit, so as to provide a negative reference voltage at its output terminal. The voltage absolute value of the negative reference voltage is equal to the voltage value of the set voltage. However, the settling time of the negative reference voltage generated by the above-mentioned negative voltage generator is very long. In addition, even after the settling time, there is still a spike current in the above-mentioned negative voltage generator.

发明内容Contents of the invention

有鉴于此,本发明提供一种负电压产生器及其负电压检测器,可降低负参考电压的安定时间以快速地提供稳定的负参考电压,且在负参考电压达到设定值之后,负电压产生器内无突波电流。In view of this, the present invention provides a negative voltage generator and a negative voltage detector thereof, which can reduce the settling time of the negative reference voltage to quickly provide a stable negative reference voltage, and after the negative reference voltage reaches a set value, the negative voltage There is no surge current in the voltage generator.

本发明的负电压产生器用以提供负参考电压。负电压产生器包括负电压检测器以及电压泵电路。负电压检测器包括第一电路、第二电路以及比较电路。第一电路用以接收负参考电压,且根据负参考电压产生第一电压。第二电路用以产生第二电压。比较电路耦接第一电路以接收第一电压,耦接第二电路以接收第二电压,且对第一电压及第二电压进行比较以产生控制信号。电压泵电路耦接负电压检测器以接收控制信号,且根据控制信号产生负参考电压。The negative voltage generator of the present invention is used for providing a negative reference voltage. The negative voltage generator includes a negative voltage detector and a voltage pump circuit. The negative voltage detector includes a first circuit, a second circuit and a comparison circuit. The first circuit is used for receiving a negative reference voltage and generating a first voltage according to the negative reference voltage. The second circuit is used for generating a second voltage. The comparison circuit is coupled to the first circuit to receive the first voltage, coupled to the second circuit to receive the second voltage, and compares the first voltage and the second voltage to generate a control signal. The voltage pump circuit is coupled to the negative voltage detector to receive the control signal, and generates a negative reference voltage according to the control signal.

在本发明的一实施例中,第一电路包括第一P型晶体管、第一电阻器以及第一电流源。第一P型晶体管的第一端耦接接地电压,且第一P型晶体管的控制端接收负参考电压。第一电阻器的第一端耦接第一P型晶体管的第二端。第一电流源耦接第一电阻器的第二端以提供第一电压。第二电路包括第二P型晶体管以及第二电流源。第二P型晶体管的第一端及控制端耦接接地电压,且第二P型晶体管的第二端提供第二电压。第二电流源耦接第二P型晶体管的第二端。In an embodiment of the present invention, the first circuit includes a first P-type transistor, a first resistor, and a first current source. The first terminal of the first P-type transistor is coupled to the ground voltage, and the control terminal of the first P-type transistor receives a negative reference voltage. The first terminal of the first resistor is coupled to the second terminal of the first P-type transistor. The first current source is coupled to the second end of the first resistor to provide a first voltage. The second circuit includes a second P-type transistor and a second current source. The first terminal and the control terminal of the second P-type transistor are coupled to the ground voltage, and the second terminal of the second P-type transistor provides a second voltage. The second current source is coupled to the second terminal of the second P-type transistor.

在本发明的一实施例中,第一P型晶体管的基体耦接第一电阻器的第二端。第二电路还包括第二电阻器。第二电阻器的第一端耦接第二P型晶体管的第二端,且第二电阻器的第二端耦接第二电流源以及第二P型晶体管的基体。In an embodiment of the invention, the body of the first P-type transistor is coupled to the second end of the first resistor. The second circuit also includes a second resistor. A first end of the second resistor is coupled to the second end of the second P-type transistor, and a second end of the second resistor is coupled to the second current source and the body of the second P-type transistor.

在本发明的一实施例中,第二电路还包括第三电阻器。第三电阻器的第一端耦接接地电压,且第三电阻器的第二端耦接第二P型晶体管的第一端。In an embodiment of the present invention, the second circuit further includes a third resistor. A first end of the third resistor is coupled to the ground voltage, and a second end of the third resistor is coupled to the first end of the second P-type transistor.

在本发明的一实施例中,当第一电压大于第二电压时,比较电路产生控制信号以致能电压泵电路,致使电压泵电路根据电源电压来递增负参考电压的电压绝对值。In an embodiment of the present invention, when the first voltage is greater than the second voltage, the comparison circuit generates a control signal to enable the voltage pump circuit, so that the voltage pump circuit increases the absolute value of the negative reference voltage according to the power supply voltage.

在本发明的一实施例中,当第一电压等于第二电压时,比较电路产生控制信号以禁能电压泵电路,致使电压泵电路将负参考电压的电压绝对值维持在设定电压值,其中设定电压值小于电源电压的电压绝对值。In an embodiment of the present invention, when the first voltage is equal to the second voltage, the comparison circuit generates a control signal to disable the voltage pump circuit, so that the voltage pump circuit maintains the absolute value of the negative reference voltage at the set voltage value, Wherein the set voltage value is less than the absolute value of the voltage of the power supply voltage.

在本发明的一实施例中,电压泵电路包括时脉信号产生电路以及负泵电路。时脉信号产生电路用以根据控制信号以产生时脉信号组。负泵电路耦接时脉信号产生电路以接收时脉信号组,且根据时脉信号组以及电源电压产生负参考电压,其中负参考电压的电压绝对值小于电源电压的电压绝对值。In an embodiment of the invention, the voltage pump circuit includes a clock signal generating circuit and a negative pump circuit. The clock signal generating circuit is used for generating a clock signal group according to the control signal. The negative pump circuit is coupled to the clock signal generating circuit to receive the clock signal set, and generates a negative reference voltage according to the clock signal set and the power supply voltage, wherein the absolute value of the negative reference voltage is smaller than the absolute voltage value of the power supply voltage.

本发明的负电压检测器用以检测负参考电压。负电压检测器包括第一电路、第二电路以及比较电路。第一电路用以接收负参考电压,且根据负参考电压产生第一电压。第二电路用以产生第二电压。比较电路耦接第一电路以接收第一电压,耦接第二电路以接收第二电压,且对第一电压及第二电压进行比较以判断负参考电压的电压绝对值是否等于设定电压值。The negative voltage detector of the present invention is used for detecting negative reference voltage. The negative voltage detector includes a first circuit, a second circuit and a comparison circuit. The first circuit is used for receiving a negative reference voltage and generating a first voltage according to the negative reference voltage. The second circuit is used for generating a second voltage. The comparison circuit is coupled to the first circuit to receive the first voltage, coupled to the second circuit to receive the second voltage, and compares the first voltage and the second voltage to determine whether the absolute value of the negative reference voltage is equal to the set voltage value .

基于上述,本发明实施例的负电压产生器采用电源电压来产生负参考电压,基于电源电压的电压绝对值大于负参考电压的电压绝对值,故可让负参考电压的电压绝对值快速地到达设定电压值。除此之外,本发明实施例的负电压检测器并未自负参考电压获取电流。因此,在负参考电压的电压绝对值到达设定电压值之后,可让负电压产生器中的电压泵电路停止泵运作以避免产生突波电流,同时负参考电压的电压绝对值仍可维持在设定电压值。Based on the above, the negative voltage generator of the embodiment of the present invention uses the power supply voltage to generate the negative reference voltage. Based on the absolute value of the voltage of the power supply voltage being greater than the absolute value of the voltage of the negative reference voltage, the absolute value of the voltage of the negative reference voltage can be reached quickly. Set the voltage value. Besides, the negative voltage detector of the embodiment of the present invention does not draw current from the negative reference voltage. Therefore, after the absolute value of the voltage of the negative reference voltage reaches the set voltage value, the voltage pump circuit in the negative voltage generator can stop pumping to avoid surge current, while the absolute value of the voltage of the negative reference voltage can still be maintained at Set the voltage value.

为让本发明的上述特征和优点能更明显易懂,下文特举实施例,并配合所附附图作详细说明如下。In order to make the above-mentioned features and advantages of the present invention more comprehensible, the following specific embodiments are described in detail together with the accompanying drawings.

附图说明Description of drawings

下面的所附附图是本发明的说明书的一部分,示出了本发明的示例实施例,所附附图与说明书的描述一起说明本发明的原理。The accompanying drawings, which follow and form a part of the specification of this invention, illustrate example embodiments of the invention and together with the description explain the principles of the invention.

图1是依照本发明一实施例所示出的负电压产生器的电路方块示意图。FIG. 1 is a schematic circuit block diagram of a negative voltage generator according to an embodiment of the present invention.

图2是依照本发明一实施例所示出的电压泵电路的电路方块示意图。FIG. 2 is a schematic circuit block diagram of a voltage pump circuit according to an embodiment of the invention.

图3是依照本发明一实施例所示出的负泵电路的电路架构示意图。FIG. 3 is a schematic diagram of a circuit structure of a negative pump circuit according to an embodiment of the present invention.

图4是依照本发明一实施例所示出的时脉信号组的信号波形示意图。FIG. 4 is a schematic diagram of signal waveforms of a clock signal group according to an embodiment of the present invention.

图5A是依照本发明一实施例所示出的负电压检测器的第一电路及第二电路的电路示意图。5A is a schematic circuit diagram of a first circuit and a second circuit of a negative voltage detector according to an embodiment of the present invention.

图5B是依照本发明另一实施例所示出的负电压检测器的第一电路及第二电路的电路示意图。5B is a schematic circuit diagram of a first circuit and a second circuit of a negative voltage detector according to another embodiment of the present invention.

图5C是依照本发明又一实施例所示出的负电压检测器的第一电路及第二电路的电路示意图。5C is a schematic circuit diagram of the first circuit and the second circuit of the negative voltage detector according to another embodiment of the present invention.

图5D是依照本发明又一实施例所示出的负电压检测器的第一电路及第二电路的电路示意图。5D is a schematic circuit diagram of the first circuit and the second circuit of the negative voltage detector according to another embodiment of the present invention.

【符号说明】【Symbol Description】

100:负电压产生器100: negative voltage generator

120:负电压检测器120: Negative voltage detector

121、521A、521B、521C、521D:第一电路121, 521A, 521B, 521C, 521D: first circuit

122、522A、522B、522C、522D:第二电路122, 522A, 522B, 522C, 522D: second circuit

123:比较电路123: Comparison circuit

140:电压泵电路140: Voltage pump circuit

142:时脉信号产生电路142: Clock signal generation circuit

144:负泵电路144: Negative pump circuit

C1、CL:电容器C1, CL: Capacitor

CS:控制信号CS: control signal

GND:接地电压GND: ground voltage

I1、I2:电流源I1, I2: current source

M1、M2:P型晶体管M1, M2: P-type transistors

NVref:负参考电压NVref: negative reference voltage

R1、R2、R3:电阻器R1, R2, R3: Resistors

S_PH:时脉信号组S_PH: clock signal group

S_PH1、S_PH2:时脉信号S_PH1, S_PH2: clock signal

SW1~SW4:开关SW1~SW4: switch

TP1、TP2:时间区间TP1, TP2: time interval

V1:第一电压V1: first voltage

V2:第二电压V2: second voltage

VDD:电源电压VDD: supply voltage

VR3:跨压VR3: across voltage

Vsg:电压差Vsg: voltage difference

Vset:设定电压值Vset: set voltage value

具体实施方式Detailed ways

为了使本发明的内容可以被更容易明了,以下特举实施例作为本发明确实能够据以实施的范例。另外,凡可能之处,在附图及实施方式中使用相同标号的元件/构件,是代表相同或类似部件。In order to make the content of the present invention more comprehensible, the following specific embodiments are taken as examples in which the present invention can be implemented. In addition, wherever possible, elements/components with the same reference numerals are used in the drawings and embodiments to represent the same or similar components.

图1是依照本发明一实施例所示出的负电压产生器的电路方块示意图。请参照图1,负电压产生器100用以提供负参考电压NVref,亦即负参考电压NVref的电压低于零伏特。负电压产生器100包括负电压检测器120以及电压泵电路140。负电压检测器120可包括第一电路121、第二电路122以及比较电路123,但本发明不限于此。第一电路121用以接收负参考电压NVref,且根据负参考电压NVref产生第一电压V1。第二电路122用以产生第二电压V2。比较电路123耦接第一电路121以接收第一电压V1,且耦接第二电路122以接收第二电压V2。比较电路123对第一电压V1及第二电压V2进行比较以判断负参考电压NVref的电压绝对值是否等于设定电压值Vset,并据以产生一控制信号CS。电压泵电路140耦接负电压检测器120以接收控制信号CS,且根据控制信号CS产生负参考电压NVref。FIG. 1 is a schematic circuit block diagram of a negative voltage generator according to an embodiment of the present invention. Referring to FIG. 1 , the negative voltage generator 100 is used to provide a negative reference voltage NVref, that is, the voltage of the negative reference voltage NVref is lower than zero volts. The negative voltage generator 100 includes a negative voltage detector 120 and a voltage pump circuit 140 . The negative voltage detector 120 may include a first circuit 121 , a second circuit 122 and a comparison circuit 123 , but the invention is not limited thereto. The first circuit 121 is used for receiving the negative reference voltage NVref, and generating the first voltage V1 according to the negative reference voltage NVref. The second circuit 122 is used to generate the second voltage V2. The comparison circuit 123 is coupled to the first circuit 121 to receive the first voltage V1, and coupled to the second circuit 122 to receive the second voltage V2. The comparison circuit 123 compares the first voltage V1 and the second voltage V2 to determine whether the absolute value of the negative reference voltage NVref is equal to the set voltage value Vset, and generates a control signal CS accordingly. The voltage pump circuit 140 is coupled to the negative voltage detector 120 to receive the control signal CS, and generates a negative reference voltage NVref according to the control signal CS.

在本发明的一实施例中,当第一电压V1大于第二电压V2时,比较电路123判断负参考电压NVref的电压绝对值小于设定电压值Vset,故比较电路123可产生第一电平(例如逻辑高电平)的控制信号CS以致能电压泵电路140,致使电压泵电路140根据电源电压VDD来进行泵运作以递增负参考电压NVref的电压绝对值,其中电源电压VDD为正电压,且设定电压值Vset小于电源电压VDD的电压值。相对地,当第一电压V1等于第二电压V2时,比较电路123判断负参考电压NVref的电压绝对值等于设定电压值Vset,故比较电路123可产生第二电平(例如逻辑低电平)的控制信号CS以禁能电压泵电路140,致使电压泵电路140停止泵运作以将负参考电压NVref的电压绝对值维持在设定电压值Vset,其中第一电平与第二电平互补。可以理解的是,负参考电压NVref的电压绝对值小于电源电压VDD的电压值。In an embodiment of the present invention, when the first voltage V1 is greater than the second voltage V2, the comparison circuit 123 judges that the absolute value of the negative reference voltage NVref is less than the set voltage value Vset, so the comparison circuit 123 can generate the first level The control signal CS (for example, logic high level) enables the voltage pump circuit 140, causing the voltage pump circuit 140 to perform pumping operation according to the power supply voltage VDD to increase the absolute value of the voltage of the negative reference voltage NVref, wherein the power supply voltage VDD is a positive voltage, And the set voltage value Vset is lower than the voltage value of the power supply voltage VDD. Relatively, when the first voltage V1 is equal to the second voltage V2, the comparison circuit 123 judges that the absolute voltage value of the negative reference voltage NVref is equal to the set voltage value Vset, so the comparison circuit 123 can generate a second level (such as a logic low level ) control signal CS to disable the voltage pump circuit 140, causing the voltage pump circuit 140 to stop the pumping operation to maintain the absolute value of the voltage of the negative reference voltage NVref at the set voltage value Vset, wherein the first level and the second level are complementary . It can be understood that the absolute value of the negative reference voltage NVref is smaller than the voltage value of the power supply voltage VDD.

附带一提的,上述范例的控制信号CS的逻辑高低电平与电压泵电路140致能与否的关系仅只是一个范例。本领域具通常知识者皆知,控制信号CS的逻辑高低电平与电压泵电路140致能与否的关系是可以由设计者依实际需求来进行定义的。Incidentally, the relationship between the logic high and low levels of the control signal CS and whether the voltage pump circuit 140 is enabled or not in the above example is just an example. Those skilled in the art know that the relationship between the logic high and low levels of the control signal CS and whether the voltage pump circuit 140 is enabled or not can be defined by the designer according to actual requirements.

图2是依照本发明一实施例所示出的电压泵电路的电路方块示意图。请参照图2,电压泵电路140可包括时脉信号产生电路142以及负泵电路144,但本发明不限于此。时脉信号产生电路142可根据控制信号CS产生时脉信号组S_PH。负泵电路144耦接时脉信号产生电路142以接收时脉信号组S_PH,且可根据时脉信号组S_PH以及电源电压VDD产生负参考电压NVref。FIG. 2 is a schematic circuit block diagram of a voltage pump circuit according to an embodiment of the invention. Referring to FIG. 2 , the voltage pump circuit 140 may include a clock signal generating circuit 142 and a negative pump circuit 144 , but the present invention is not limited thereto. The clock signal generating circuit 142 can generate the clock signal set S_PH according to the control signal CS. The negative pump circuit 144 is coupled to the clock signal generating circuit 142 to receive the clock signal set S_PH, and can generate a negative reference voltage NVref according to the clock signal set S_PH and the power voltage VDD.

在本发明的一实施例中,时脉信号产生电路142可采用已知的时脉信号产生电路来实现。在本发明的一实施例中,负泵电路144可采用图3所示的两相负泵电路来实现。请合并参照图2及图3,负泵电路144可包括电容器C1和CL以及开关SW1~SW4,但本发明不限于此。开关SW1的第一端耦接电源电压VDD。开关SW1的第二端耦接电容器C1的第一端。开关SW2的第一端耦接接地电压GND。开关SW2的第二端耦接电容器C1的第二端。开关SW3的第一端耦接电容器C1的第一端。开关SW3的第二端耦接接地电压GND。开关SW4的第一端耦接电容器C1的第二端。电容器CL的第一端耦接接地电压GND。电容器CL的第二端耦接开关SW4的第二端以提供负参考电压NVref。另外,时脉信号组S_PH(示于图2)可例如包括如图4所示的时脉信号S_PH1及S_PH2,其中时脉信号S_PH1为逻辑高电平的时间区间不重叠于时脉信号S_PH2为逻辑高电平的时间区间,图3的开关SW1及SW2受控于时脉信号S_PH1,且开关SW3及SW4受控于时脉信号S_PH2,但本发明不限于此。在本发明的另一实施例中,开关SW1及SW2可受控于时脉信号S_PH2,而开关SW3及SW4可受控于时脉信号S_PH1。In an embodiment of the present invention, the clock signal generating circuit 142 can be realized by a known clock signal generating circuit. In an embodiment of the present invention, the negative pump circuit 144 can be realized by using the two-phase negative pump circuit shown in FIG. 3 . Please refer to FIG. 2 and FIG. 3 together, the negative pump circuit 144 may include capacitors C1 and CL and switches SW1 - SW4 , but the present invention is not limited thereto. The first end of the switch SW1 is coupled to the power voltage VDD. The second end of the switch SW1 is coupled to the first end of the capacitor C1. The first end of the switch SW2 is coupled to the ground voltage GND. The second end of the switch SW2 is coupled to the second end of the capacitor C1. A first terminal of the switch SW3 is coupled to a first terminal of the capacitor C1. The second end of the switch SW3 is coupled to the ground voltage GND. A first terminal of the switch SW4 is coupled to a second terminal of the capacitor C1. The first end of the capacitor CL is coupled to the ground voltage GND. The second terminal of the capacitor CL is coupled to the second terminal of the switch SW4 to provide a negative reference voltage NVref. In addition, the clock signal group S_PH (shown in FIG. 2 ) may include, for example, clock signals S_PH1 and S_PH2 as shown in FIG. In the time interval of logic high level, the switches SW1 and SW2 in FIG. 3 are controlled by the clock signal S_PH1, and the switches SW3 and SW4 are controlled by the clock signal S_PH2, but the present invention is not limited thereto. In another embodiment of the present invention, the switches SW1 and SW2 are controlled by the clock signal S_PH2, and the switches SW3 and SW4 are controlled by the clock signal S_PH1.

请合并参照图3及图4,以下假设开关SW1及SW2可反应于逻辑高电平的时脉信号S_PH1而被导通,开关SW1及SW2可反应于逻辑低电平的时脉信号S_PH1而被关断,开关SW3及SW4可反应于逻辑高电平的时脉信号S_PH2而被导通,开关SW3及SW4可反应于逻辑低电平的时脉信号S_PH2而被关断。因此,于图4所示的时间区间TP1,开关SW1及SW2为导通状态且开关SW3及SW4为关断状态,致使电源电压VDD对电容器C1充电。接着,于图4所示的时间区间TP2,开关SW1及SW2为关断状态且开关SW3及SW4为导通状态,因此电容器C1将所储存的电荷量转移至电容器CL(亦即电容器C1对电容器CL充电),以降低负参考电压NVref(亦即增加负参考电压NVref的电压绝对值)。通过反复地切换时脉信号S_PH1的逻辑电平以及时脉信号S_PH2的逻辑电平,可让电容器C1反复地被充电以及对电容器CL充电,以逐步地降低负参考电压NVref(亦即逐步地增加负参考电压NVref的电压绝对值),直到负参考电压NVref的电压绝对值等于设定电压值Vset为止。Please refer to FIG. 3 and FIG. 4 together. It is assumed that the switches SW1 and SW2 can be turned on in response to the clock signal S_PH1 of logic high level, and the switches SW1 and SW2 can be turned on in response to the clock signal S_PH1 of logic low level. To turn off, the switches SW3 and SW4 can be turned on in response to the clock signal S_PH2 of logic high level, and the switches SW3 and SW4 can be turned off in response to the clock signal S_PH2 of logic low level. Therefore, in the time interval TP1 shown in FIG. 4 , the switches SW1 and SW2 are turned on and the switches SW3 and SW4 are turned off, so that the power supply voltage VDD charges the capacitor C1 . Then, in the time interval TP2 shown in FIG. 4 , the switches SW1 and SW2 are in the off state and the switches SW3 and SW4 are in the on state, so the capacitor C1 transfers the stored charge to the capacitor CL (that is, the capacitor C1 is connected to the capacitor CL). CL charging) to decrease the negative reference voltage NVref (ie increase the absolute value of the negative reference voltage NVref). By repeatedly switching the logic level of the clock signal S_PH1 and the logic level of the clock signal S_PH2, the capacitor C1 can be repeatedly charged and the capacitor CL can be charged to gradually reduce the negative reference voltage NVref (that is, gradually increase The voltage absolute value of the negative reference voltage NVref), until the voltage absolute value of the negative reference voltage NVref is equal to the set voltage value Vset.

由于电源电压VDD的电压值大于设定电压值Vset,因此相较于一般采用设定电压值Vset的电压源来对电容器C1充电,本实施例采用电源电压VDD来对电容器C1充电可有效提高电容器C1中所储存的电荷量,以及提高自电容器C1转移至电容器CL的电荷量,故而可加快负参考电压NVref的下降速度(亦即加快负参考电压NVref的电压绝对值的上升速度),从而降低负参考电压NVref的安定时间。除此之外,在负参考电压NVref的电压绝对值等于设定电压值Vset之后,图2的时脉信号产生电路142可反应于控制信号CS而停止切换时脉信号S_PH1的逻辑电平以及时脉信号S_PH2的逻辑电平(亦即时脉信号S_PH1及S_PH2的逻辑电平将不再转态),以让负泵电路144停止泵运作(稍后会再详细说明)。如此一来,可避免开关SW1~SW4启闭切换而产生突波电流。Since the voltage value of the power supply voltage VDD is greater than the set voltage value Vset, compared with the general use of a voltage source with the set voltage value Vset to charge the capacitor C1, the use of the power supply voltage VDD to charge the capacitor C1 in this embodiment can effectively improve the performance of the capacitor. The amount of charge stored in C1 and the amount of charge transferred from the capacitor C1 to the capacitor CL can be increased, so the falling speed of the negative reference voltage NVref can be accelerated (that is, the rising speed of the absolute value of the negative reference voltage NVref can be accelerated), thereby reducing Settling time of negative reference voltage NVref. In addition, after the absolute value of the negative reference voltage NVref is equal to the set voltage value Vset, the clock signal generating circuit 142 in FIG. The logic level of the pulse signal S_PH2 (that is, the logic levels of the pulse signals S_PH1 and S_PH2 will no longer transition), so that the negative pump circuit 144 stops the pumping operation (details will be described later). In this way, it is possible to avoid the surge current generated by the switch SW1 - SW4 being switched on and off.

图5A是依照本发明一实施例所示出的负电压检测器的第一电路及第二电路的电路示意图。请参照图5A,第一电路521A可包括P型晶体管M1、电阻器R1以及电流源I1。P型晶体管M1的第一端耦接接地电压GND。P型晶体管M1的控制端接收负参考电压NVref。电阻器R1的第一端耦接P型晶体管M1的第二端。电流源I1耦接电阻器R1的第二端以提供第一电压V1。第二电路522A包括P型晶体管M2以及电流源I2。P型晶体管M2的第一端及控制端耦接接地电压GND。P型晶体管M2的第二端提供第二电压V2。电流源I2耦接P型晶体管M2的第二端。5A is a schematic circuit diagram of a first circuit and a second circuit of a negative voltage detector according to an embodiment of the present invention. Referring to FIG. 5A , the first circuit 521A may include a P-type transistor M1 , a resistor R1 and a current source I1 . A first terminal of the P-type transistor M1 is coupled to the ground voltage GND. The control terminal of the P-type transistor M1 receives the negative reference voltage NVref. A first end of the resistor R1 is coupled to a second end of the P-type transistor M1. The current source I1 is coupled to the second end of the resistor R1 to provide the first voltage V1. The second circuit 522A includes a P-type transistor M2 and a current source I2. The first terminal and the control terminal of the P-type transistor M2 are coupled to the ground voltage GND. The second terminal of the P-type transistor M2 provides a second voltage V2. The current source I2 is coupled to the second terminal of the P-type transistor M2.

在本发明的一实施例中,P型晶体管M1及M2可为相同尺寸的P型金氧半场效晶体管,因此第一电压V1及第二电压V2可分别如式(1)及式(2)所示,其中Vref为负参考电压NVref的电压绝对值,Vsg为P型晶体管M1(或P型晶体管PM2)的第二端与控制端之间的电压差,I为电流源I1的输出电流值,且R为电阻器R1的电阻值。In an embodiment of the present invention, the P-type transistors M1 and M2 can be P-type MOSFETs of the same size, so the first voltage V1 and the second voltage V2 can be expressed as formula (1) and formula (2) respectively ), where Vref is the absolute value of the negative reference voltage NVref, Vsg is the voltage difference between the second terminal of the P-type transistor M1 (or P-type transistor PM2) and the control terminal, and I is the output current of the current source I1 value, and R is the resistance value of resistor R1.

V1=-Vref+Vsg+Vset=-Vref+Vsg+I×R 式(1)V1=-Vref+Vsg+Vset=-Vref+Vsg+I×R Formula (1)

V2=Vsg 式(2)V2=Vsg formula (2)

当负参考电压NVref的电压绝对值Vref等于设定电压值When the voltage absolute value Vref of the negative reference voltage NVref is equal to the set voltage value

Vset(亦即I×R)时,第一电压V1等于第二电压V2,故通过第一电压V1与第二电压V2的比较结果,可判断负参考电压NVref的电压绝对值Vref是否等于设定电压值Vset。另外,通过调整电阻器R1的电阻值R,即可调整设定电压值Vset。When Vset (that is, I×R), the first voltage V1 is equal to the second voltage V2, so it can be judged whether the absolute value Vref of the negative reference voltage NVref is equal to the set voltage or not through the comparison result of the first voltage V1 and the second voltage V2. Voltage value Vset. In addition, by adjusting the resistance value R of the resistor R1, the set voltage value Vset can be adjusted.

请合并参照图3及图5A。在此值得一提的是,由于负参考电压NVref是耦接至P型晶体管M1的控制端(亦即P型金氧半场效晶体管的栅极端),因此并无电流自图3的电容器CL流至图5A的P型晶体管M1。换句话说,图5A实施例的负电压检测器并不会自图3的电容器CL获取电流。因此,在负参考电压NVref的电压绝对值Vref等于设定电压值Vset之后,即使图3的负泵电路144停止泵运作,负参考电压NVref的电压绝对值Vref仍可维持在设定电压值Vset。Please refer to FIG. 3 and FIG. 5A together. It is worth mentioning here that since the negative reference voltage NVref is coupled to the control terminal of the P-type transistor M1 (that is, the gate terminal of the P-type MOSFET), there is no current flowing from the capacitor CL in FIG. 3 Flow to the P-type transistor M1 of FIG. 5A. In other words, the negative voltage detector of the embodiment of FIG. 5A does not draw current from the capacitor CL of FIG. 3 . Therefore, after the absolute voltage value Vref of the negative reference voltage NVref is equal to the set voltage value Vset, the absolute voltage value Vref of the negative reference voltage NVref can still be maintained at the set voltage value Vset even if the negative pump circuit 144 in FIG. .

另外值得一提的是,于图5A中,P型晶体管M1的第二端的电压(为-Vref+Vsg)须大于P型晶体管M1的第一端的电压(为接地电压GND),致使负参考电压NVref的电压绝对值Vref必须小于电压差Vsg。因此,在本发明的其他实施例中,可通过增加P型晶体管M1及M2的基体效应(body effect)以提高P型晶体管M1及M2的临界电压(threshold voltage),从而提高电压差Vsg以及负参考电压NVref的电压绝对值Vref的上限。It is also worth mentioning that in FIG. 5A, the voltage at the second terminal of the P-type transistor M1 (which is -Vref+Vsg) must be greater than the voltage at the first terminal of the P-type transistor M1 (which is the ground voltage GND), resulting in a negative reference The voltage absolute value Vref of the voltage NVref must be smaller than the voltage difference Vsg. Therefore, in other embodiments of the present invention, the threshold voltage (threshold voltage) of the P-type transistors M1 and M2 can be increased by increasing the body effect of the P-type transistors M1 and M2, thereby increasing the voltage difference Vsg and the negative voltage. The upper limit of the voltage absolute value Vref of the reference voltage NVref.

图5B是依照本发明另一实施例所示出的负电压检测器的第一电路及第二电路的电路示意图。请合并参照图5A及图5B,图5B的第一电路521B类似于图5A的第一电路521A,两者的差异仅在于:第一电路521B的P型晶体管M1的基体是耦接电阻器R1的第二端,以增加第一电路521B的P型晶体管M1的基体效应来提高P型晶体管M1的临界电压,从而提高负参考电压NVref的电压绝对值的上限。另外,图5B的第二电路522B类似于图5A的第二电路522A,两者的差异仅在于:第二电路522B还包括电阻器R2。5B is a schematic circuit diagram of a first circuit and a second circuit of a negative voltage detector according to another embodiment of the present invention. Please refer to FIG. 5A and FIG. 5B together. The first circuit 521B of FIG. 5B is similar to the first circuit 521A of FIG. 5A, the difference between the two is only that the base of the P-type transistor M1 of the first circuit 521B is a coupling resistor R1 The second terminal of the first circuit 521B increases the threshold voltage of the P-type transistor M1 by increasing the body effect of the P-type transistor M1, thereby increasing the upper limit of the absolute value of the negative reference voltage NVref. In addition, the second circuit 522B in FIG. 5B is similar to the second circuit 522A in FIG. 5A , the only difference is that the second circuit 522B further includes a resistor R2.

详细来说,如图5B所示,电阻器R2的第一端耦接P型晶体管M2的第二端,且电阻器R2的第二端耦接电流源I2,其中P型晶体管M2的基体耦接电阻器R2的第二端以增加P型晶体管M2的基体效应。通过增加第二电路522B的P型晶体管M2的基体效应,可对应地提高第二电路522B的P型晶体管M2的临界电压,致使第二电路522B的P型晶体管M2的特性与第一电路521B的P型晶体管M1的特性相匹配。In detail, as shown in FIG. 5B, the first end of the resistor R2 is coupled to the second end of the P-type transistor M2, and the second end of the resistor R2 is coupled to the current source I2, wherein the base of the P-type transistor M2 is coupled to Connect to the second end of the resistor R2 to increase the body effect of the P-type transistor M2. By increasing the body effect of the P-type transistor M2 of the second circuit 522B, the threshold voltage of the P-type transistor M2 of the second circuit 522B can be increased correspondingly, so that the characteristics of the P-type transistor M2 of the second circuit 522B are different from those of the first circuit 521B. The characteristics of the P-type transistor M1 are matched.

请再重新参照图5A,P型晶体管M1的第二端与第一端的电压差为-Vref+Vsg,而P型晶体管M2的第二端与第一端的电压差为Vsg。由于P型晶体管M1的第二端与第一端的电压差不等于P型晶体管M2的第二端与第一端的电压差,致使P型晶体管M1与M2的特性不匹配。Please refer to FIG. 5A again, the voltage difference between the second terminal and the first terminal of the P-type transistor M1 is -Vref+Vsg, and the voltage difference between the second terminal and the first terminal of the P-type transistor M2 is Vsg. Since the voltage difference between the second terminal and the first terminal of the P-type transistor M1 is not equal to the voltage difference between the second terminal and the first terminal of the P-type transistor M2, the characteristics of the P-type transistors M1 and M2 do not match.

图5C是依照本发明又一实施例所示出的负电压检测器的第一电路及第二电路的电路示意图。请合并参照图5A及图5C,图5C的第一电路521C类似于图5A的第一电路521A,故可参酌上述的相关说明,在此不再赘述。另外,图5C的第二电路522C类似于图5A的第二电路522A,两者的差异仅在于:第二电路522C还包括电阻器R3。5C is a schematic circuit diagram of the first circuit and the second circuit of the negative voltage detector according to another embodiment of the present invention. Please refer to FIG. 5A and FIG. 5C together. The first circuit 521C in FIG. 5C is similar to the first circuit 521A in FIG. 5A . In addition, the second circuit 522C in FIG. 5C is similar to the second circuit 522A in FIG. 5A , the only difference is that the second circuit 522C further includes a resistor R3.

详细来说,如图5C所示,电阻器R3的第一端耦接接地电压GND。电阻器R3的第二端耦接P型晶体管M2的第一端。由于第二电路522C的P型晶体管M2的第一端通过电阻器R3耦接至接地电压GND,因此第二电路522C的P型晶体管M2的第一端的电压为电阻器R3两端的跨压VR3,且第二电路522C的P型晶体管M2的第二端与第一端的电压差为Vsg-VR3。另外,第二电路521C的P型晶体管M1的第二端与第一端的电压差为-Vref+Vsg,故通过调整电阻器R3的电阻值来让跨压VR3等于负参考电压NVref的电压绝对值Vref,即可让P型晶体管M1的第二端与第一端的电压差等于P型晶体管M2的第二端与第一端的电压差,致使P型晶体管M1与M2的特性匹配。In detail, as shown in FIG. 5C , the first end of the resistor R3 is coupled to the ground voltage GND. The second end of the resistor R3 is coupled to the first end of the P-type transistor M2. Since the first end of the P-type transistor M2 of the second circuit 522C is coupled to the ground voltage GND through the resistor R3, the voltage of the first end of the P-type transistor M2 of the second circuit 522C is the voltage VR3 across the two ends of the resistor R3 , and the voltage difference between the second terminal and the first terminal of the P-type transistor M2 of the second circuit 522C is Vsg−VR3. In addition, the voltage difference between the second terminal and the first terminal of the P-type transistor M1 of the second circuit 521C is -Vref+Vsg, so by adjusting the resistance value of the resistor R3, the voltage across the voltage VR3 is equal to the negative reference voltage NVref. The value of Vref can make the voltage difference between the second terminal and the first terminal of the P-type transistor M1 equal to the voltage difference between the second terminal and the first terminal of the P-type transistor M2, so that the characteristics of the P-type transistors M1 and M2 match.

类似地,图5C的第二电路522C中的电阻器R3的设计也可套用在图5B的第二电路522B中,如图5D的第二电路522D所示。第二电路522D的实施细节及运作可参酌上述的相关说明,在此不再赘述。另外,图5D的第一电路521D类似于图5B的第一电路521B,故可参酌上述的相关说明,在此不再赘述。Similarly, the design of the resistor R3 in the second circuit 522C of FIG. 5C can also be applied to the second circuit 522B of FIG. 5B , as shown in the second circuit 522D of FIG. 5D . The implementation details and operation of the second circuit 522D can refer to the relevant description above, and will not be repeated here. In addition, the first circuit 521D in FIG. 5D is similar to the first circuit 521B in FIG. 5B , so reference may be made to the relevant description above, and details are not repeated here.

综上所述,本发明实施例的负电压产生器采用电源电压对电容器充电以产生并提供负参考电压,基于电源电压的电压绝对值大于负参考电压的电压绝对值,故可让负参考电压的电压绝对值快速地到达设定电压值。除此之外,本发明实施例的负电压检测器并未自电容器获取电流。因此,在负参考电压的电压绝对值到达设定电压值之后,可让负电压产生器中的电压泵电路停止泵运作以避免产生突波电流,同时负参考电压的电压绝对值仍可维持在设定电压值。To sum up, the negative voltage generator of the embodiment of the present invention uses the power supply voltage to charge the capacitor to generate and provide a negative reference voltage. The absolute value of the voltage quickly reaches the set voltage value. Besides, the negative voltage detector of the embodiment of the present invention does not draw current from the capacitor. Therefore, after the absolute value of the voltage of the negative reference voltage reaches the set voltage value, the voltage pump circuit in the negative voltage generator can stop pumping to avoid surge current, while the absolute value of the voltage of the negative reference voltage can still be maintained at Set the voltage value.

虽然本发明已以实施例揭示如上,然其并非用以限定本发明,任何所属技术领域中的技术人员,在不脱离本发明的精神和范围内,当可作些许的更改与润饰,故本发明的保护范围当视权利要求所界定的为准。Although the present invention has been disclosed above with the embodiments, it is not intended to limit the present invention. Any person skilled in the art can make some changes and modifications without departing from the spirit and scope of the present invention. Therefore, this The scope of protection of the invention should be defined by the claims.

Claims (15)

1. a kind of negative voltage generator, to provide negative reference voltage, which is characterized in that the negative voltage generator includes:
Negative voltage detector, comprising:
First circuit generates first voltage to receive the negative reference voltage, and according to the negative reference voltage;
Second circuit, to generate second voltage;And
Comparison circuit couples first circuit to receive the first voltage, couples the second circuit to receive described the Two voltages, and the first voltage and the second voltage are compared to generate control signal;And
Voltage pump circuit couples the negative voltage detector to receive the control signal, and generate according to the control signal The negative reference voltage.
2. negative voltage generator according to claim 1:
Wherein first circuit includes:
First P-type transistor, the first end coupling ground voltage of first P-type transistor, and first P-type transistor Control terminal receives the negative reference voltage;
First resistor device, the first end of the first resistor device couple the second end of first P-type transistor;And
First current source, couples the second end of the first resistor device to provide the first voltage,
Wherein the second circuit includes:
Second P-type transistor, the first end and control terminal of second P-type transistor couple the ground voltage, and described the The second end of two P-type transistors provides the second voltage;And
Second current source couples the second end of second P-type transistor.
3. negative voltage generator according to claim 2, wherein the matrix coupling described first of first P-type transistor The second end of resistor, and the second circuit further include:
Second resistor, the first end of the second resistor couple the second end of second P-type transistor, and described The second end of second resistor couples the matrix of second current source and second P-type transistor.
4. negative voltage generator according to claim 3, wherein the second circuit further include:
3rd resistor device, the first end of the 3rd resistor device couple the ground voltage, and the second of the 3rd resistor device End couples the first end of second P-type transistor.
5. negative voltage generator according to claim 2, wherein the second circuit further include:
Second resistor, the first end of the second resistor couple the ground voltage, and the second of the second resistor End couples the first end of second P-type transistor.
6. negative voltage generator according to claim 1, wherein when the first voltage is greater than the second voltage, institute It states comparison circuit and generates the control signal with voltage pump circuit described in enable, cause the voltage pump circuit according to supply voltage To be incremented by the absolute value of voltage of the negative reference voltage.
7. negative voltage generator according to claim 6, wherein when the first voltage is equal to the second voltage, institute It states comparison circuit and generates the control signal with voltage pump circuit described in forbidden energy, cause the voltage pump circuit by the negative reference The absolute value of voltage of voltage maintains setting voltage value, wherein the voltage that the setting voltage value is less than the supply voltage is absolute Value.
8. negative voltage generator according to claim 1, wherein the voltage pump circuit includes:
Clock signal generation circuit, to according to the control signal to generate clock signal group;And
Negative pump circuit couples the clock signal generation circuit to receive the clock signal group, and according to the clock signal Group and supply voltage generate the negative reference voltage, wherein the absolute value of voltage of the negative reference voltage is less than the power supply electricity The absolute value of voltage of pressure.
9. negative voltage generator according to claim 8, wherein the clock signal group is two-phase clock signal, and described Negative pump circuit includes:
First capacitor device;
First switch, the first end of the first switch couple the supply voltage, and the second end coupling of the first switch The first end of the first capacitor device;
Second switch, the first end of the second switch couple ground voltage, and described in the second end coupling of the second switch The second end of first capacitor device;
The first end of third switch, the third switch couples the first end of the first capacitor device, and the third is opened The second end of pass couples the ground voltage;
The first end of 4th switch, the 4th switch couples the second end of the first capacitor device;And
Output capacitor, the first end of the output capacitor couple the ground voltage, and the second of the output capacitor Hold the second end of coupling the 4th switch to provide the negative reference voltage,
Wherein the first switch and the second switch are controlled by a wherein clock signal for the two-phase clock signal, and institute It states third switch and the 4th switch is controlled by wherein another clock signal of the two-phase clock signal.
10. a kind of negative voltage detector, to detect negative reference voltage, which is characterized in that the negative voltage detector includes:
First circuit generates first voltage to receive the negative reference voltage, and according to the negative reference voltage;
Second circuit, to generate second voltage;And
Comparison circuit couples first circuit to receive the first voltage, couples the second circuit to receive described the Two voltages, and the absolute value of voltage first voltage and the second voltage being compared to judge the negative reference voltage Whether setting voltage value is equal to.
11. negative voltage detector according to claim 10:
Wherein first circuit includes:
First P-type transistor, the first end coupling ground voltage of first P-type transistor, and first P-type transistor Control terminal receives the negative reference voltage;
First resistor device, the first end of the first resistor device couple the second end of first P-type transistor;And
First current source, couples the second end of the first resistor device to provide the first voltage,
Wherein the second circuit includes:
Second P-type transistor, the first end and control terminal of second P-type transistor couple the ground voltage, and described the The second end of two P-type transistors provides the second voltage;And
Second current source couples the second end of second P-type transistor.
12. negative voltage detector according to claim 11, wherein the matrix coupling of first P-type transistor described the The second end of one resistor, and the second circuit further include:
Second resistor, the first end of the second resistor couple the second end of second P-type transistor, and described The second end of second resistor couples the matrix of second current source and second P-type transistor.
13. negative voltage detector according to claim 12, wherein the second circuit further include:
3rd resistor device, the first end of the 3rd resistor device couple the ground voltage, and the second of the 3rd resistor device End couples the first end of second P-type transistor.
14. negative voltage detector according to claim 11, wherein the second circuit further include:
Second resistor, the first end of the second resistor couple the ground voltage, and the second of the second resistor End couples the first end of second P-type transistor.
15. negative voltage detector according to claim 10, wherein when the first voltage is greater than the second voltage, The comparison circuit generates the control signal of the first level;When the first voltage is equal to the second voltage, the comparison Circuit generates the control signal of second electrical level, wherein first level is complementary with the second electrical level.
CN201810889125.2A 2018-04-01 2018-08-07 Negative voltage generator and negative voltage detector thereof Active CN110350778B (en)

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