CN110347203A - The band-gap reference circuit of broadband low-power consumption - Google Patents
The band-gap reference circuit of broadband low-power consumption Download PDFInfo
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- CN110347203A CN110347203A CN201910532933.8A CN201910532933A CN110347203A CN 110347203 A CN110347203 A CN 110347203A CN 201910532933 A CN201910532933 A CN 201910532933A CN 110347203 A CN110347203 A CN 110347203A
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is DC
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices
- G05F1/575—Regulating voltage or current wherein the variable actually regulated by the final control device is DC using semiconductor devices in series with the load as final control devices characterised by the feedback circuit
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Abstract
The band-gap reference circuit of broadband low-power consumption, is related to integrated circuit technique, and the present invention includes band gap core circuit, feed circuit and start-up circuit；The band gap core circuit includes a current mirror；The feed circuit includes the first metal-oxide-semiconductor (MN1), the second metal-oxide-semiconductor (MN2), third metal-oxide-semiconductor (MN3), third transistor (Q3) and first capacitor (C1)；The start-up circuit includes the 4th metal-oxide-semiconductor (MP4), the 5th metal-oxide-semiconductor (MP5), the 6th metal-oxide-semiconductor (MN4), the 7th metal-oxide-semiconductor (MN3) and the 4th triode (Q4)；The present invention can effectively reduce power consumption and chip area using the band gap nuclear structure without amplifier.
Description
Technical field
The present invention relates to technical field of integrated circuits.
Background technique
Analogy and digital circuit requires a reference source, and bandgap voltage reference is a kind of widely used benchmark electricity
Road, for providing a DC voltage unrelated with temperature and supply voltage.Traditional band-gap reference circuit is as shown in Figure 1, height
Precision calculating amplifier, which carries out voltage clamp, makes band gap core generate PTAT current, by the current mirror to resistance and three poles
Bandgap voltage reference is generated on pipe.The complexity that the presence of high-operational amplifier not only increases design also adds the function of amplifier
Consumption, this is unacceptable for should being used to say that for low-power consumption, it is necessary to realize low-power consumption using new structure and mentality of designing
Band-gap reference structure.
It is traditional band-gap reference circuit shown in Fig. 1, the effect of amplifier is clamp NMOS tube MP6 drain electrode and MP7 drain electrode electricity
Position, band gap nuclear structure generate and the proportional electric current I of temperaturePTAT=Δ VBE/ R4, by current mirror by IPTATMirror image is to resistance
On R5 and triode Q7, temperature independent voltage V is formedREF=VBE+IPTAT×R5.The amplifier uses so that chip area
All increase with power consumption many, for another aspect, the design of amplifier is also most important, if the imbalance of amplifier is excessive or bandwidth very
The small function or performance that can all influence band-gap reference circuit.
Summary of the invention
The technical problem to be solved by the present invention is to the power consumption encountered when working for band-gap reference circuit is excessive to ask
Topic, proposes a kind of band-gap reference circuit of broadband low-power consumption.
The present invention solve the technical problem the technical solution adopted is that, the band-gap reference circuit of broadband low-power consumption is special
Sign is, including band gap core circuit, feed circuit and start-up circuit；
The band gap core circuit includes a current mirror, and the input of current mirror terminates vdd terminal, the first electric current of current mirror
Branch connects the first end of first resistor R1 by the first triode Q1, and the second current branch connects the second electricity by the second triode Q2
The first end of R2 is hindered, the tie point of the second end of the second end and second resistance R2 of first resistor R1 is connect by 3rd resistor R3
Ground: the resistance value of first resistor R1 is greater than second resistance R2:
The feed circuit include the first metal-oxide-semiconductor MN1, the second metal-oxide-semiconductor MN2, third metal-oxide-semiconductor MN3, third transistor Q3 and
First capacitor C1；The input of first metal-oxide-semiconductor MN1 terminates vdd terminal, the grid of the second metal-oxide-semiconductor MN2 of output termination；Second metal-oxide-semiconductor
The input of MN2 terminates vdd terminal, output the first reference point of termination；The input of third metal-oxide-semiconductor MP3 terminates vdd terminal, output termination the
The grid of two metal-oxide-semiconductor MN2, also connects the second reference point by third transistor Q3；First reference point connects the first triode Q1, the
The base stage of two triode Q2 and third transistor Q3；Second reference point connects the first end of second resistance R2, also passes through first capacitor
C1 ground connection；
The start-up circuit include the 4th metal-oxide-semiconductor MP4, the 5th metal-oxide-semiconductor MP5, the 6th metal-oxide-semiconductor MN4, the 7th metal-oxide-semiconductor MN3 and
4th triode Q4；The grounded-grid of 4th metal-oxide-semiconductor MP4, input termination VDD, the grid of the first metal-oxide-semiconductor MN1 of output termination；The
Five metal-oxide-semiconductors input termination vdd terminal, the input terminal of the 4th triode Q4 of grid and output termination；The input terminal of 6th metal-oxide-semiconductor MN4
The input terminal of the 4th triode Q4 is connect, grid connects the output end of the 4th metal-oxide-semiconductor MP4, output the second reference point of termination；7th MOS
The output end of the 4th metal-oxide-semiconductor MP4 of input termination of pipe MN3, grid connect the first reference point, output end ground connection；4th triode
Output the second reference point of termination, base stage meet the first reference point, the output end VREF of the first reference point tape splicing gap reference circuit.
First metal-oxide-semiconductor, the second metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor are NMOS tube, third metal-oxide-semiconductor, the 4th
Metal-oxide-semiconductor, the 5th metal-oxide-semiconductor are PMOS tube.
The invention has the benefit that the band gap nuclear structure without amplifier can effectively reduce power consumption and chip area；It adopts
The stability that negative feedback structure is conducive to improve bandgap structure is formed with feed circuit；Electric current on feed circuit and start-up circuit
Band gap core circuit finally is flowed through, this portion of electrical current will effectively reduce the size of resistance in band gap core circuit.
Detailed description of the invention
Fig. 1 is traditional band-gap reference circuit figure；
Fig. 2 is band-gap reference circuit figure proposed by the present invention；
Fig. 3 is the band gap core circuit in Fig. 2；
Fig. 4 is the feed circuit in Fig. 2；
Fig. 5 is the start-up circuit in Fig. 2；
Specific embodiment
The present invention provides a kind of broadband low-power consumption bandgap voltage reference, with negative on the basis of traditional bandgap reference circuit
Feedback control loop reduces the power consumption of integrated circuit instead of high-operational amplifier, while having widened circuit bandwidth, improves band gap base
The speed of quasi- circuit.
The present invention is described in detail below in conjunction with attached drawing and specific implementation case.
With reference to Fig. 2 it is found that broadband low-power consumption band-gap reference circuit in the present invention by band gap core circuit, feed circuit and
Start-up circuit composition.
Band gap core circuit: realizing core function, generates bandgap voltage reference.
Feed circuit: control loop operating point maintains the stabilization of loop.
Start-up circuit: for the starting of band-gap reference circuit, prevent circuit from entering degeneracy state.
The course of work of circuit of the present invention are as follows: start-up circuit pours into circuit to band gap core circuit, starts band-gap reference
Work；Band gap core circuit generates required bandgap voltage reference VREF；Feed circuit maintains the stabilization of entire loop.
Band gap core circuit, feed circuit and start-up circuit is described in detail below:
Band gap core circuit:
Band gap core circuit includes the first PMOS tube MP1, the second PMOS tube MP2, the first triode Q1, the second triode
Q2, first resistor R1, second resistance R2 and 3rd resistor R3.The m=1 of the wherein m=10 of Q1, Q2, the resistance value ratio of resistance R1
The resistance value of resistance R2 is big.Each device connection relationship is as follows:
First PMOS tube MP1 source electrode meets VDD, and grid connects the grid of the second PMOS tube MP2, and drain electrode connects the first triode Q1's
Collector；Second PMOS tube MP2 source electrode connects VDD, grid and drain interconnection；The collector of first triode Q1 connects the first PMOS tube
The drain electrode of MP1, base stage connect the base stage of the second triode Q2, and emitter successively meets first resistor R1 and 3rd resistor R3 to ground；The
Two triode Q2 collectors connect the drain electrode of the second PMOS tube MP2, and emitter successively meets second resistance R2 and 3rd resistor R3 to ground.
Triode Q1, Q2, Q3 are connected with the base stage of Q4, form PTAT current I with resistance R1 and R2PTAT=Δ VBE/(R1-
3R2).Since MP1 and MP2 forms current-mirror structure, the electric current on triode Q1 and Q2 is all IPTAT, finally triode Q2's
Base stage forms band gap voltage VREF=VBE2+IPTAT×(3R2+4R3)。
Compared with traditional bandgap voltage reference, band gap core circuit reduces the use of amplifier, and provides feedback
The bias current of circuit and start-up circuit can effectively reduce power consumption, simplify circuit structure.
Feed circuit:
Feed circuit includes third metal-oxide-semiconductor MP3, the first metal-oxide-semiconductor MN1, the second metal-oxide-semiconductor MN2 and first capacitor C1, wherein three
The m=1 of pole pipe Q3.Each device connection relationship is as follows:
Third metal-oxide-semiconductor MP3 source electrode meets VDD, and grid connects the drain electrode of the first PMOS tube MP1, and drain electrode connects third transistor Q3's
Collector；Third transistor Q3 base stage connects the base stage of the first triode Q1, and collector connects the collector of the second triode Q2；First
Metal-oxide-semiconductor MN1 drain electrode meets VDD, and grid connects the drain electrode of the 4th metal-oxide-semiconductor MP4, and source electrode connects the drain electrode of third metal-oxide-semiconductor MP3；Second metal-oxide-semiconductor
MN2 drain electrode meets VDD, and grid connects the drain electrode of third metal-oxide-semiconductor MP3, and source electrode connects the grid of the first triode Q1；The one end first capacitor C1
Connect the emitter of the second triode Q2, other end ground connection.
First metal-oxide-semiconductor MN1 is connected on startup, and MN1 is in an off state when normal work.Feed circuit and band gap core
Circuit constitutes negative-feedback, and the voltage bias which is conducive to stablize loop also helps the disturbance for inhibiting power vd D,
Concrete principle is as follows:
When band gap voltage VREF is disturbed, and current potential is caused to rise, since R1 is greater than R2, the electric current on triode Q2 increases
Measure Δ I2Greater than the current increment Δ I on triode Q11, this draws high MP1 pipe by A point (grid of MP3) current potential.In order to tie up
The electric current held on triode Q3 is constant, and B (grid of MN2) puts current potential decline.Since NMOS tube MN2 constitutes source follower structure,
Bandgap voltage reference VREF declines with the decline of B point, inhibits the variation of VREF, loop becomes stable.
When supply voltage VDD, which is disturbed, generates increment, the gate source voltage of PMOS tube MP3 increases, and B point current potential rises therewith
Height, since NMOS tube MN2 constitutes source follower structure, bandgap voltage reference VREF is increased with the raising of B point.Such as preceding institute
It states, the raising of VREF will be so that A point current potential increases, it is suppressed that the variation of the gate source voltage of PMOS tube MP3, loop become stable.
The frequency compensation of circuit does not use the structure of miller compensation, but is compensated by capacitor C1, reaches suitable
Phase margin.So the dominant pole of loop is further from origin, this makes the unity gain bandwidth of loop larger, and response is very fast.
Start-up circuit:
Start-up circuit includes the 4th metal-oxide-semiconductor MP4, the 5th metal-oxide-semiconductor MP5, the 7th metal-oxide-semiconductor MN3, the 6th metal-oxide-semiconductor MN4 and the 4th
Triode Q4, wherein the 4th metal-oxide-semiconductor is PMOS tube, using than pipe.Each device connection relationship is as follows:
4th metal-oxide-semiconductor MP4 source electrode meets VDD, grounded-grid, and drain electrode connects the drain electrode of third NMOS tube MN3；5th metal-oxide-semiconductor MP5
Source electrode connects VDD, grid and drain interconnection；7th metal-oxide-semiconductor MN3 grid connects the base stage of the first triode Q1, source electrode ground connection；6th
Metal-oxide-semiconductor MN4, which drains, connects the drain electrode of the 5th PMOS tube MP5, and grid connects the drain electrode of the 7th metal-oxide-semiconductor MN3, and source electrode meets the second triode Q2
Emitter；4th transistor collector connects the drain electrode of the 5th metal-oxide-semiconductor MP5, and emitter connects the emitter of the second triode Q2, grid
The base stage that pole meets the first triode Q1 also meets output pin VREF.
The effect of start-up circuit is that the stage starts band-gap reference circuit in fact in circuit, prevents circuit work in degeneracy shape
State.
The power up of start-up circuit are as follows: since the grid perseverance of PMOS tube MP4 is grounded, not yet enter working condition in circuit
When, C point (grid of MN1) current potential is height；NMOS tube MN4 is connected at this time, and electric current flows after PMOS tube MP5 and NMOS tube MN4
Enter band gap core circuit and charge for capacitor C1, while NMOS tube MN1 conducting is so that MN2 pipe is also switched on, by bandgap voltage reference
VREF is pulled up；Since PMOS tube MP2 is diode connection, electric current is flowed through on MP2 and is mirrored on MP1 pipe, band gap core electricity
It starts to work on road；When bandgap voltage reference VREF rises on MN3 pipe threshold voltage, C point current potential is lower, by MN1 pipe and
The shutdown of MN4 pipe, PMOS tube MP4 pipe can greatly reduce quiescent dissipation using designing than pipe；Electric current flows through Q4 pipe on MP5 pipe, most
Band gap nuclear structure is flowed into eventually, reduces the size of resistance R3.
In conclusion invention not only simplifies circuit, there is lower power consumption, and band gap core resistance size compared with
It is small, while the bandwidth of circuit is larger, it can steady operation in temperature, voltage and electric source disturbance.
Claims (2)
1. the band-gap reference circuit of broadband low-power consumption, which is characterized in that including band gap core circuit, feed circuit and starting electricity
Road；
The band gap core circuit includes a current mirror, and the input of current mirror terminates vdd terminal, the first current branch of current mirror
The first end of first resistor (R1) is connect by the first triode (Q1), the second current branch connects second by the second triode (Q2)
The tie point of the first end of resistance (R2), the second end of the second end and second resistance (R2) of first resistor (R1) passes through third electricity
(R3) ground connection is hindered, the resistance value of first resistor (R1) is greater than second resistance (R2):
The feed circuit includes the first metal-oxide-semiconductor (MN1), the second metal-oxide-semiconductor (MN2), third metal-oxide-semiconductor (MN3), third transistor
(Q3) and first capacitor (C1)；The input of first metal-oxide-semiconductor (MN1) terminates vdd terminal, the grid of output termination the second metal-oxide-semiconductor (MN2)
Pole；The input of second metal-oxide-semiconductor (MN2) terminates vdd terminal, output the first reference point of termination；The input of third metal-oxide-semiconductor (MP3) terminates
Vdd terminal, the grid of output termination the second metal-oxide-semiconductor (MN2) also connect the second reference point by third transistor (Q3)；First reference
Point connects the base stage of the first triode (Q1), the second triode (Q2) and third transistor (Q3)；Second reference point connects the second electricity
The first end of (R2) is hindered, is also grounded by first capacitor (C1)；
The start-up circuit includes the 4th metal-oxide-semiconductor (MP4), the 5th metal-oxide-semiconductor (MP5), the 6th metal-oxide-semiconductor (MN4), the 7th metal-oxide-semiconductor
(MN3) and the 4th triode (Q4)；The grounded-grid of 4th metal-oxide-semiconductor (MP4), input termination VDD, output the first metal-oxide-semiconductor of termination
(MN1) grid；5th metal-oxide-semiconductor input termination vdd terminal, the input terminal of grid and output the 4th triode (Q4) of termination；6th
The input of metal-oxide-semiconductor (MN4) terminates the input terminal of the 4th triode (Q4), and grid connects the output end of the 4th metal-oxide-semiconductor (MP4), exports
Terminate the second reference point；The input of 7th metal-oxide-semiconductor (MN3) terminates the output end of the 4th metal-oxide-semiconductor (MP4), and grid connects the first reference
Point, output end ground connection；The output of 4th triode terminates the second reference point, and base stage connects the first reference point, the first reference point tape splicing
The output end VREF of gap reference circuit.
2. the band-gap reference circuit of broadband low-power consumption as described in claim 1, which is characterized in that first metal-oxide-semiconductor, second
Metal-oxide-semiconductor, the 6th metal-oxide-semiconductor and the 7th metal-oxide-semiconductor are NMOS tube, and third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor are PMOS tube.
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| CN201910532933.8A CN110347203B (en) | 2019-06-19 | 2019-06-19 | Broadband low-power-consumption band-gap reference circuit |
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| CN111381625A (en) * | 2020-03-12 | 2020-07-07 | 上海华虹宏力半导体制造有限公司 | Reference source circuit |
| CN112398080A (en) * | 2020-10-20 | 2021-02-23 | 中国科学院微电子研究所 | An overcurrent protection device |
| CN113485505A (en) * | 2021-07-05 | 2021-10-08 | 成都华微电子科技有限公司 | High-voltage low-power-consumption band-gap reference voltage source |
| CN114706442A (en) * | 2022-04-12 | 2022-07-05 | 中国电子科技集团公司第五十八研究所 | Low-power-consumption band-gap reference circuit |
| CN115016581A (en) * | 2022-05-31 | 2022-09-06 | 电子科技大学长三角研究院(湖州) | A bandgap reference circuit structure with its own start-up circuit |
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