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CN110310896B - 用于接合基板的接触表面的方法 - Google Patents

用于接合基板的接触表面的方法 Download PDF

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Publication number
CN110310896B
CN110310896B CN201910644305.9A CN201910644305A CN110310896B CN 110310896 B CN110310896 B CN 110310896B CN 201910644305 A CN201910644305 A CN 201910644305A CN 110310896 B CN110310896 B CN 110310896B
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Prior art keywords
sacrificial layer
substrate
thickness
liquid
less
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CN110310896A (zh
Inventor
B.雷布汉
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EV Group E Thallner GmbH
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EV Group E Thallner GmbH
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Abstract

本发明涉及一种用于将第一基板（1,1＇）的第一至少部分地为金属的接触表面与第二基板的第二至少部分地为金属的接触表面相接合的方法，其具有以下步骤、尤其是以下进程：‑将至少部分地、尤其是主要可溶于所述接触表面中的至少一个的材料中的牺牲层（4）施加到所述接触表面中的至少一个上，‑在将所述牺牲层（4）至少部分溶于所述接触表面中的至少一个中的情况下接合所述接触表面。所述接触表面可以毯覆方式被布置在一个接合区域（3）上。可替换地，所述接触表面可由多个接合区（3＇）构造，所述接合区（3＇）被块体材料（5）环绕或者被布置在基板腔（2）中。为了产生基板之间的预接合可使用液体（例如水）。

Description

用于接合基板的接触表面的方法
本申请是申请日为2013年7月5日、申请号为201380077980.9（国际申请号为PCT/EP2013/064239）以及发明名称为“在将施加在接触表面之一上的牺牲层溶于接触表面中的至少一个中的情况下接合金属接触表面的方法”的发明专利申请的分案申请。
技术领域
本发明涉及一种用于将第一基板的第一接触表面与第二基板的第二接触表面相接合的方法。
背景技术
所谓的接合技术已在半导体工业中使用达数年。接合技术允许大多彼此极精确地对准的两个或更多个基板的连接。在大多数情形中，此连接永久地(因此不可逆地)实现。不可逆意指在无基板的破坏或至少基板的部分地破坏的情况下不再可能在该接合过程之后分离两个基板。当连接所述基板时，展示存在致使永久连接的不同化学及物理机构。非金属表面是尤其令人关注的。在非金属表面中，所谓的预接合的形成通过进行纯接触而发生。
将经由表面效应引起的此自发地形成的该两个基板的可逆连接称作预接合，以便区分其与稍后的真正的实际接合，该实际接合不再可分离(因此是不可逆的)且通过额外热处理引起。以此方式产生的预接合的特点仍在于不应低估的强度。尽管这样彼此连接的晶片必须仍在较高温度下经热处理以用于永久接合，但预接合的强度已经足以固定两个基板直至下一过程步骤为止。预接合是用于主要在对准过程之后初步固定（Vorfixierung）两个基板的一种极有用手段，因为在对准过程之后两个基板不再允许朝向彼此移动。预接合应主要基于在因基板的表面上的永久及感应偶极而存在的范德华(Van der Waals)力。由于范德华力是极弱的，因此相应高的接触面积是必要的，以便显著黏合作用发生在所述基板之间。然而，未抛光的固体表面不在相应高粗糙度下进行最佳接触。在纯固体接触的情形中，预接合因而主要在极平坦的抛光基板表面之间出现。在室温下，可能甚至在无温度和/或力至基板的额外施加的情况下也可在基板表面之间形成已经分离的共价键。然而，在室温下已形成的共价连接的数目应是小到可忽略。
主要地，液体的使用可增大基板之间的相应黏合作用。另一方面，液体均衡基板的表面上的不均匀性且自身较佳地形成甚至永久偶极。明显的预接合能力主要建立在非金属表面上。经抛光且极平坦的诸如硅、陶瓷的半导体(此处主要为氧化物、金属氧化物)在进行接触时展示相应特性。
对于非金属表面、即展示主要共价键特征的表面(例如Si、SiO2等)而言，先前施加的液体膜可通过在热处理期间出现的共价键而甚至有助于强化永久接合。非金属表面在预接合之后经历热处理。热活化在表面之间产生共价键且这样产生不可逆连接。这样，单晶、高精确切割且磨碎的硅晶片主要通过在硅原子之间形成共价连接而彼此焊接。如果硅氧化物位于硅晶片上，则主要地共价硅氧化物键和/或氧化物-氧化物键形成。已展示，极薄液体层(通常为水)的使用致使或至少改良表面之间的共价键的形成。液体层在此仅数纳米厚或甚至仅由单个液体单层构成。液体层因此不必仅改良预接合特性，而是也显著贡献于共价连接的形成。在水的情形中，原因主要在于使得提供氧作为彼此要接合的基板表面的原子之间的连接原子。水分子的氢与氧之间的键合能足够低以用所施加能量破坏。作为氧的新反应物主要是基板表面的原子。但是必须提及，存在其中在基板表面的永久接合过程中液体的原子直接参与的这样的过程不需要必须发生的表面。
用于纯金属表面的接合过程极不同地进行。由于金属因其金属接合性质而在化学上及物理上表现得完全不同，因此需要完全不同的接合策略。金属主要在较高温度下且大多在极高压力下彼此接合。高温导致沿着表面和/或晶粒边界和/或体积的增强扩散。由于原子的增大行动性，不同物理及化学效应发生，所述不同物理及化学效应导致两个表面的焊接。这样的金属接合的缺点因此主要在于极高温度及压力的使用以完全确保两个基板的连接。在绝大多数情形中，但是将不会发现纯金属表面。除诸如Pt、Au及Ag的极惰性金属之外的几乎所有金属在大气中涂覆有氧化物层(即使仅极薄)。该氧化物层足以甚至在以极薄氧化物层覆盖的金属表面之间产生预接合。但是，如果意欲使两种金属彼此直接接合以例如使两个导电触点彼此连接，则该氧化物层继而是不期望的。
基板的热处理规定相应长加热及冷却时间。此外，高温可导致诸如微芯片的功能单元及主要地内存芯片的破坏且可将其损坏到不可用的程度。
此外，具有相应表面的基板在实际接合步骤之前必须彼此对准。该对准一旦经实施便应不再被破坏直至最终(因此永久)接合过程为止。但是，主要在较高温度下，由于不同材料的不同热膨胀系数及所得热应力，通常基板的不同部分区域彼此的位移发生。在最糟糕情形中，彼此待连接的两个基板由具有不同热膨胀系数的两种不同材料构成。这些位移越大，不同材料的热膨胀系数的差别就越大。
发明内容
本发明的任务是构想一种对于材料的低温度和/或低压力接合尽可能高效的方法。
利用本发明的特征解决本任务。给出本发明的有利的扩展方案。说明书、权利要求书和/或附图中所给出的特征中的至少两个特征构成的所有组合也归属于本发明的范围内。在给定值范围内，在所提到的边界之内的值也应被视为公开为边界值且将以任何组合是可请求保护的。
本发明所基于的任务是将至少一个超薄牺牲层沉积在待接合的基板的接触表面中的至少一个上，该牺牲层在根据本发明的接合步骤期间溶解于环绕其的材料中或在界面上消耗。本发明的另一方面在于，通过用材料(尤其是至少主要地为液体，较佳地至少主要地为水)作为牺牲层的先前润湿过程的金属表面的接合尤其是用于在基板之间产生预接合。也可设想到由上下重叠的多个牺牲层构成的组合，尤其较佳地固体牺牲层及已沉积在其上的液体牺牲层的沉积。因此，通常也可上下重叠地施加多个牺牲层。
尽管所公开的本发明根本上适合于满足必要前提条件的所有种类的材料，但主要地金属适合于根据本发明的实施形式。在进一步公开内容中，关于金属表面示例性地图解说明根据本发明的实施形式。
基板尤其由硅构成，其中在基板上尤其是金属接合层、较佳地由铜构成的金属接合层至少施加于接合区中。只要接合层不覆盖整个基板，接合区就较佳地由尤其是基板的块体材料（Bulkmaterial）环绕，且共同地形成尤其是平面的接触表面。
根据本发明的另一尤其是独立的方面，彼此待接合的接合区涂层有牺牲层，该牺牲层一方面能够产生预接合，其原子另一方面在预接合之后在尽可能小的温度处理中被接合区的材料/在接合区的材料中溶解。材料层在此较佳地由决不达到牺牲层的材料的溶解性边界的材料构成。根据本发明，牺牲层的材料完全地崩解（aufloesen）于在接触表面中的至少一个上(较佳地两个接触表面上)的材料层中。浓度较佳地以原子百分比(at%)为单位来给定。根据本发明，接触表面中的至少一个的尤其是金属的材料中的牺牲层的材料的溶解性介于0 at%与10 at%之间，较佳地介于0 at%与1 at%之间，更佳地介于0 at%与0.1 at%之间，最佳地介于0 at%与0.01 at%之间，特佳地介于0 at%与0.001 at%之间，绝佳地介于0at%与0.0001 at%之间。
根据本发明的牺牲层的厚度小于1000 nm，较佳地小于100 nm，更佳地小于10 nm，最佳地小于1 nm。牺牲层的厚度对基板(尤其基板的接合区)的厚度的比率小于1，较佳地小于10-2，较佳地小于10-4，更佳地小于10-6，还更佳地小于10-8。
该牺牲层可通过任何任意沉积方法施加到接触表面中的至少一个上。产生尽可能粗颗粒的和/或至少主要单晶的牺牲层的沉积方法是较佳的。根据本发明可设想的沉积方法尤其是如下：
●原子层沉积，
●电化学沉积，
●物理气相沉积(PVD)，
●化学气相沉积(CVD)，
●通过冷凝和/或再升华的气相沉积，诸如来自水蒸汽的水在表面上直接沉积，
●等离子体沉积，
●湿化学沉积方法，
●溅射，和/或
●分子束外延。
根据本发明，如果牺牲层(尤其是Si)与接合层(尤其是Cu)在原地共同地被施加到基板上，则是有利的。由此防止氧化物在接合层上的形成。
牺牲层根据本发明尤其是由适合于预接合的形成且在将进行接触的基板中的至少一个的接触表面上的接合区和/或块体区中具有溶解性的材料构成。该牺牲层尤其是至少部分地(较佳地主要地)由以下材料或物质中的至少一种构成：
●金属，尤其是
○Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Te、Sn和/或Zn，
●合金，
●半导体(具有相应掺杂)，尤其是
○元素半导体，较佳地
■Si、Ge、Se、Te、B和/或(α)-Sn，
○化合物半导体，较佳地
■GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC和/或SiGe，
○有机半导体，较佳地
■黄烷士酮（Flavanthron）、萘环酮（Perinon）、Alq3、萘环酮、并四苯（Tetracen）、喹吖啶酮（Chinacridon）、并五苯（Pentacen）、酞青素（Phthalocyanine）、聚噻吩（Polythiophene）、PTCDA、MePTCDI、吖啶酮（Acridon）和/或阴丹酮（Indanthron）。
●液体，尤其是
○水，
○醇，
○醛，
○酮，
○醚，
○酸，
○碱基。
在根据本发明的第一实施形式中，接合区是在基板的整个接触表面上方延伸的层。该接合区的表面的粗糙度尤其是通过已知方法减小。较佳地使用化学-机械抛光过程(CMP)。此后，整个接合区表面用根据本发明的牺牲层覆盖。该牺牲层被施加或在施加之后经处理使得平均粗糙度值小于1 µm、较佳地小于500 nm、更佳地小于100 nm、还更佳地小于10 nm、最佳地小于1 nm。
在根据本发明的第二实施形式中，设置分布于整个接触表面上方的多个接合区。所述接合区尤其是形成在基板中的至少一个的接触表面上方突出的形貌（Topographie），因此突出超过其表面。较佳地所述接合区由任意块体材料环绕。块体材料的表面和接合区表面尤其是形成共同的平面E。由导电区构成的由非导电区环绕的表面也称为混合表面。非导电区由电介质构成且与导电区绝缘。可设想的最简单的实施形式将是用于电荷传输的通过电介质绝缘的接触部位。通过接合这些混合表面，基板之间的导电连接可经由所接合的接触部位实现。
因此，牺牲层根据本发明既在块体材料表面上又在接合区表面上以毯覆方式（vollflaechig）被沉积在接触表面上。局部接合区尤其是用于封装的铜垫（Cu pad）、金属接头（metal joint）或金属框架。Cu垫尤其是在不同层系统中用于功能单元之间的电连接。金属接头可尤其是硅通孔(TSV，through silicon via)。金属框架可举例而言是用于MEMS装置的微封装。为清晰起见，这些功能单元未在附图中示出。
在根据本发明的第三实施形式中，直接在基板之内设置在整个接触表面上方分布的多个接合区，其中基板首先通过蚀刻技术被结构化并且此后被填充有相应接合区材料以及紧接着由牺牲材料覆盖。
在根据本发明的接合步骤中，构造为任意层系统的两个基板互相接近，使得已施加在接触表面上的（多个）牺牲层彼此接触且形成预接合。牺牲层表面的粗糙度可通过化学和/或机械方法在很大程度上减小(较佳地消除)。在确定的层系统中，层系统可在预接合之前在对准单元（aligner）中彼此对准。
在预接合之前，牺牲层表面可根据本发明用液体(较佳地水)润湿。较佳地所施加的液体层薄于100 nm，更佳地薄于10 nm，最佳地薄于1 nm，特佳地仅单层。在亲水表面的情况下，足以将基板曝露至周围大气。表面接着通过来自大气的水蒸汽来润湿。
该液体可根据本发明尤其是通过冷凝施加。在特别的实施形式中，将要涂层的基板(较佳地在冷却状态中)放置于具有饱和蒸汽大气的加热空间中。该液体由于基板的低温突然冷凝于基板表面上。
在本发明的可替换的实施方案中，通过离心式抗蚀剂涂覆过程（Schleuderbelackungsprozess）将牺牲层的材料尤其是作为液体施加。
在本发明的另一可替换的实施方案中，通过喷涂抗蚀剂涂覆设备（Spruehbelackungsanlage）将牺牲层的材料尤其是作为液体喷涂到基板中的至少一个的接触表面上。
在特别的实施形式中，水通过起泡器（Bubbler）被引入到其中基板所位于的反应室中。为此，例如氩气、氦气及氮气的惰性气体透过水浴驱动。惰性气体在蒸镀期间支持水且借助水蒸汽使反应室饱和。水冷凝于基板的表面上且形成极薄的水膜。通过使基板冷却可支持水的冷凝。
在另一特别的实施形式中，水在简单的汽化器中经汽化且被引导到基板的表面上。与起泡器相反，此处不必使用惰性气体，而是使水温尽可能接近于沸点，以便增大水的动能且由此加速汽化。通过抽空反应室，沸点可相应降低，且该过程由此被优化。
考虑可建构可精确地沉积根据本发明的牺牲层的特定反应室，与此相应地得到根据本发明的在本专利文献的进一步进程中称作反应室的设备。
该预接合较佳地在接触表面的一个接触点中起始且在整个表面上方通过接合波扩展开。两个牺牲层表面的接触在此可尤其是通过使两个基板中的一个弯曲的针形插头（Pin）产生，使得该基板的接触表面凸状地变形且与尤其是平坦地位于接收表面上的第二基板的牺牲层表面进行接触。
在形成预接合之后，两个经接合的基板被热处理。热处理在尽可能低的温度下(理想地在室温下)发生。在此，温度小于500℃，较佳地小于400℃，更佳地小于300℃，还更佳地小于200℃，最佳地小于100℃，特佳地小于50℃。
通过根据本发明的极薄的牺牲层的实施方案使得牺牲层的原子能够尤其是仅至接合区中的快速扩散。根据本发明的扩散通过热处理被加速和/或被促进。较佳地，牺牲层的原子根据本发明完全地崩解于接合区的材料和/或块体材料中。根据本发明，也可设想到其中接合区的原子溶解于牺牲层中的过程，这由于牺牲层的极小厚度而从技术方面来看与上文所阐述的实施方案相同。
较佳地，基板在根据本发明的牺牲层的原子至接合区中的扩散过程期间被施加有压力。表面上的压力尤其是介于0.01 MPa与10 MPa之间，较佳地介于0.1 MPa与8 MPa之间，更佳地介于1 MPa与5 MPa之间，最佳地介于1.5 MPa与3 MPa之间。对于200 mm基板而言，这些值大致对应于1 kN至320 kN的力施加。
在根据本发明的预接合过程之前，牺牲层的表面应无污染和/或至少主要地较佳地完全无氧化物。尤其是，在施加牺牲层之前，为牺牲层被施加于其上的材料清除氧化物也可是必要的。在根据本发明的预接合过程之前，因而较佳地进行牺牲层表面的清洁。氧化物的去除可通过本领域技术人员已知的物理和/或化学方法发生。属于其的是通过气体和/或液体的化学还原进行废品的相应运走、通过溅射和/或等离子体（Plasma）和/或CMP进行氧化物的机械切除和/或以下方法中的一个或多个：
●化学氧化物去除，尤其是
○气体状的还原剂，
○液体还原剂，
●物理氧化物去除，尤其是
○等离子体，
○离子辅助化学蚀刻（Ion Assisted Chemical Etching），
○快速离子轰击(FAB（Fast Ion Bombardement），溅射)，
○研磨，
○抛光。
化学氧化物去除被理解为通过化学过程对氧化物的去除。化学过程被理解为物质转化（Stoffumwandlung）。在此情形中，氧化物通过处于气相和/或液相的还原剂还原且与此相应地还原剂被氧化成新的化合物。与此相应地，氧化还原剂(即反应产物)被引开。典型的还原剂例如是氢。
物理氧化物去除被理解为通过物理过程序对氧化物的去除。在物理过程中，物质转化并未发生，而是氧化物从基板的表面的纯机械去除。最常用的物理还原技术是等离子体技术。在此，通过相应场加速到基板的表面上的等离子体被产生，且做到相应的物理氧化物去除。也可设想的是溅射技术的使用。与等离子体相反，在此不是在反应室中产生统计学多粒子系统，而是在预燃室中产生离子，并且将这些离子有针对性地加速到基板上。最终，研磨及抛光还会作为氧化物去除过程而被提及。该氧化物通过研磨或抛光工具逐步地被去除。当与在微米范围中的极厚氧化物层有关时，研磨及抛光主要适合用作预处理过程。这些方法较不适合于在纳米范围中的氧化物层的正确去除。
表面清洁度的证实可用接触角方法极快速且容易地执行。已知不是氧化的表面(主要为纯铜)具有相当亲水的性质。这主要通过极小的接触角展示。如果表面被氧化为氧化物(特定而言铜被氧化至铜氧化物)，则表面性质变为越来越疏水。所测量的接触角与此相应是大的。为了示出接触角的作为时间的函数的变化且由此进一步地作为铜氧化物厚度的函数的变化，水滴的接触角按照所限定的时间单位(从自然铜氧化物的完整氧化物去除的时刻开始)被测量。随时间增加，该接触角接近饱和值。该关系可利用表面的电子结构通过迅速增长的铜氧化物的改变来阐释。自一定的铜氧化物层厚度开始，氧化物的进一步增加不再显著贡献于表面的电子结构的变化，这被反映于接触角的对数递减中(参见图4)。
这样形成的氧化物较佳地在用牺牲层表面涂层接合区表面和/或块体材料表面之前和/或在牺牲层表面彼此接合之前被去除。此处所提及的接触角方法在此用于氧化物状态的快速、精确及成本有效的评估。该方法在无复杂的化学和/或物理分析设备的情况下仍可成功完成。接触角量测装置可在装置的相应模块群组中被安装，以用于表面的完全自动化的测量及表征。可替换的测量方法将是椭圆测量术或任何其他已知的光学和/或电方法。
在根据本发明的另一实施形式中，借助作为牺牲层的水来执行接合区表面之间的接合过程。根据本发明的思想在于，给接合区表面完全地清洁掉氧化物，并且在紧接着的紧跟氧化物去除的步骤中，用水执行对接合区表面的润湿，该水在室温下允许接合区表面之间的预接合。润湿在此通过已提及的可能性中的一种而实现，诸如PVD、CVD、离心式抗蚀剂涂覆、气相沉积或者基板表面在具有足够高的空气湿度(较佳地甚至在水蒸汽方面饱和)的大气中的曝露。
牺牲层的施加在反应室中实现。较佳地，反应室可被抽空。此外，反应室的尤其是连续的排空对实现大气的有针对性的设置是有利的。较佳地，反应室是真空群集的模块的部分，较佳地是低真空群集的部分，更佳地是高真空群集的部分，最佳地是超高真空群集的部分。反应室中的压力小于1 bar，较佳地小于10-1 mbar，更佳地小于10-3 mbar，最佳地小于10-5 mbar，特佳地小于10-8 mbar。
附图说明
本发明的其他优点、特征及细节将自对较佳实施例的说明以及依据附图而得到。
图1示出了根据本发明的具有毯覆接合区的第一实施形式的侧视图，
图2示出了根据本发明的具有多个局部接合区的第二实施形式的侧视图，
图3示出了根据本发明的在基板中具有多个局部接合区的第三实施形式的侧视图，
图4示出了液体液滴边缘与铜/铜氧化物的表面之间的接触角作为时间的函数的实证测量数据，且
图5示出了含有装置的群集系统的示意性俯视图。
在图中，相同组件或具有相同效应的组件用相同参考符号表征。附图仅示意性地展示根据本发明的实施形式且未必按比例绘制。这样，正如所提到的厚度对基板的直径的比率那样，主要地牺牲层、接合区及基板的相对厚度是彼此不成比例的。
具体实施方式
图1示出了由具有边界面1o的第一基板1、具有接合区表面3o的接合区3以及具有牺牲层表面4o的牺牲层4构成的层系统7。在第一实施形式中，接合区3在基板1的整个边界面1o上方延伸。在此情形中，接合区表面3o形成第一基板1的第一接触表面。接合区3可以是第一基板1的尤其是材料一体化的(因此由相同材料组成的)和/或单片的组成部分。牺牲层4以毯覆方式被施加在第一接触表面上。
图2示出了其中带有相应的接合区表面3o'的较佳地规则地分布在边界面1o上方的多个接合区3'被施加在第一基板上的层系统7'。接合区3'因此在基板1的表面1o上方形成形貌。在所示出的较佳实施形式中，接合区3'被块体材料5环绕。块体材料可以是任意金属、非金属、陶瓷或聚合物(诸如抗蚀剂)。但是，较佳地涉及陶瓷，尤其是Si3N4或SixOxNx，还更佳地涉及氧化物陶瓷，尤其是涉及SiO2。接合区表面3'及块体材料表面5o形成共同的平面E，也就是第一接触表面。接合区表面3'及块体材料表面5o的平整度以及其共面性允许牺牲层4在第一接触表面上的最佳沉积。
图3示出了由具有边界面1o'的结构化的第一基板1'及带有接合区表面3o'的较佳地规则地分布于基板1'中的多个接合区3'构成的层系统7"。基板1已通过蚀刻被结构化，使得腔2已成形于基板1'中。这样形成的腔2尤其是利用PVD或CVD工艺被填充有用于接合区3'的材料。被沉积到共同的平面E上方的接合区3'的材料紧接着通过返回薄化过程（Rueckduennprozess）被去除。将可设想的是通过研磨工艺、抛光工艺、化学-机械抛光等的直至平面E的去除。这样制造的具有腔2的基板1'紧接着根据本发明被覆盖有牺牲层4，所述腔2通过用材料填充形成接合区3'且因此共同形成接触表面。
针对根据本发明的所有实施形式的牺牲层4的沉积可实现以使得用于牺牲层4的材料沉积直至达到必要的层厚度。第二方法在于，在第一步骤中将牺牲层4构造得比所需更厚，且在第二步骤（返回薄化过程）中将其减小到所期望的厚度。在此情形中，也将可设想的是研磨工艺和/或抛光工艺和/或化学-机械抛光的应用。在液体牺牲层的情况下，必要的层厚度也可通过允许牺牲层生长来连续地被构建。这样，例如已知在产生具有相应空气湿度的大气时，均衡层厚度在基板的表面上形成。基板表面上的良好界定的层厚度可通过对温度、压力及湿度的有针对性的控制而产生。
在制造两个层系统7、7'、7"之后，其在接合区上在构建预接合的情况下在低温度下和/或在低压力下彼此接合。
在预接合之前，牺牲层表面4o可另外用液体(较佳地水)润湿。较佳地，所施加的水层薄于100 nm，更佳地薄于10 nm，最佳地薄于1 nm，特佳地仅是单层。举例而言，将可设想到由一个SiO2层及位于其上的一个水层组成的双层系统的使用。SiO2层例如是大约1.5 nm厚，SiO2层上的水层单独地通过水分子在大气中的冷凝而形成。
在接近过程期间和/或在接近过程之前，两个基板7、7'、7"可在x和/或y方向上沿着平面E经由对准标记和/或其他对准特征而被对准。两个牺牲层4的彼此接触较佳地在一个点处通过由针形插头凸状地成形两个基板1、1'中的一个而实现。在两个牺牲层表面4o进行接触之后，形成通过预接合将两个牺牲层表面彼此固定地连接的接合波。
在根据本发明的另一方法步骤中，在低温下执行热处理和/或接合步骤。增大的温度和/或力的作用导致牺牲层4的原子至接合区3、3'中的扩散。牺牲层4的原子较佳地完全溶解于接合区3、3'和/或环绕其的块体材料5中且因此在尽可能低的温度下导致接合区材料的根据本发明的直接接合。直接接合可例如通过在此方面参考的专利文献EP2372755或专利文献PCT/EP2012/069268中的方法中的一种而实现。
根据本发明的用于产生牺牲层的实施形式较佳地是群集9、尤其是低真空群集、较佳地高真空群集、最佳地超高真空群集的模块8 (牺牲层模块)的部分。群集9由可被抽空且可经由模块闸门（Modulschleusentore）11气密性地分离成所有现存模块的内部空间10构成。在内部空间10之内，机器人12将产品晶片1逐个模块地传送。产品晶片1经由用于进入的产品晶片1的一个输入FOUP 13的群集闸（Clusterschleuse）15到达内部空间10中。在产品晶片1在群集9之内成功处理之后，机器人12再次经由一个输出FOUP 14中的FOUP闸15放下产品晶片1。
参考符号列表
1，1' 基板
1o， 1o' 边界面
2 腔
3，3' 接合区
3o，3o' 接合区表面
4 牺牲层
4o 牺牲层表面
5 块体材料
5o 块体材料表面
7，7'，7" 层系统
8 模块
9 群集
10 内部空间
11 模块闸门
12 机器人
13 输入FOUP
14 输出FOUP
15 群集闸

Claims (34)

1.一种用于将第一基板(1、1')的第一接触表面与第二基板的第二接触表面相接合的方法，其具有以下步骤：
-将固体牺牲层施加到所述第一接触表面和所述第二接触表面中的至少一个，
-将液体牺牲层施加到所述固体牺牲层上，
-接合所述第一基板(1、1')和所述第二基板，其中所述固体牺牲层和所述液体牺牲层在接合步骤期间溶解于环绕所述固体牺牲层和所述液体牺牲层的材料中或在界面上消耗。
2.根据权利要求1所述的方法，其中，施加具有小于1000nm的厚度的所述固体牺牲层，或施加具有小于1000nm的厚度的所述液体牺牲层。
3.根据权利要求2所述的方法，其中，施加具有小于100nm的厚度的所述固体牺牲层，或施加具有小于100nm的厚度的所述液体牺牲层。
4.根据权利要求3所述的方法，其中，施加具有小于10nm的厚度的所述固体牺牲层，或施加具有小于10nm的厚度的所述液体牺牲层。
5.根据权利要求4所述的方法，其中，施加具有小于1nm的厚度的所述固体牺牲层，或施加具有小于1nm的厚度的所述液体牺牲层。
6.根据权利要求1至5中任一项所述的方法，其中，所述固体牺牲层至少主要地由以下材料中的至少一种构成：
-金属，
-合金，
-半导体。
7.根据权利要求6所述的方法，其中，所述金属是Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Te、Sn和/或Zn。
8.根据权利要求6所述的方法，其中，所述半导体是具有相应掺杂的半导体。
9.根据权利要求8所述的方法，其中，所述半导体是元素半导体、化合物半导体或有机半导体。
10.根据权利要求9所述的方法，其中，所述元素半导体是Si、Ge、Se、Te、B和/或(α)-Sn。
11.根据权利要求9所述的方法，其中，所述化合物半导体是GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC和/或SiGe。
12.根据权利要求9所述的方法，其中，所述有机半导体是黄烷士酮、萘环酮、Alq3、并四苯、喹吖啶酮、并五苯、酞青素、聚噻吩、PTCDA、MePTCDI、吖啶酮和/或阴丹酮。
13.根据权利要求1至5中任一项所述的方法，其中，所述液体是如下中的至少一种：
-水，
-醇，
-醛，
-酮，
-醚，
-酸，
-碱基。
14.根据权利要求6所述的方法，其中，所述固体牺牲层完全地由以下材料中的至少一种构成：
-金属，
-合金，
-半导体。
15.根据权利要求14所述的方法，其中，所述金属是Cu、Ag、Au、Al、Fe、Ni、Co、Pt、W、Cr、Pb、Ti、Te、Sn和/或Zn。
16.根据权利要求14所述的方法，其中，所述半导体是具有相应掺杂的半导体。
17.根据权利要求16所述的方法，其中，所述半导体是元素半导体、化合物半导体或有机半导体。
18.根据权利要求17所述的方法，其中，所述元素半导体是Si、Ge、Se、Te、B和/或(α)-Sn。
19.根据权利要求17所述的方法，其中，所述化合物半导体是GaAs、GaN、InP、InxGa1-xN、InSb、InAs、GaSb、AlN、InN、GaP、BeTe、ZnO、CuInGaSe2、ZnS、ZnSe、ZnTe、CdS、CdSe、CdTe、Hg(1-x)Cd(x)Te、BeSe、HgS、AlxGa1-xAs、GaS、GaSe、GaTe、InS、InSe、InTe、CuInSe2、CuInS2、CuInGaS2、SiC和/或SiGe。
20.根据权利要求17所述的方法，其中，所述有机半导体是黄烷士酮、萘环酮、Alq3、并四苯、喹吖啶酮、并五苯、酞青素、聚噻吩、PTCDA、MePTCDI、吖啶酮和/或阴丹酮。
21.根据权利要求1至5中任一项所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的厚度的比率小于1。
22.根据权利要求21所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的厚度的比率小于10-2。
23.根据权利要求22所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的厚度的比率小于10-4。
24.根据权利要求23所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的厚度的比率小于10-6。
25.根据权利要求24所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的厚度的比率小于10-8。
26.根据权利要求21所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的接合区(3、3')的厚度的比率小于1。
27.根据权利要求26所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的接合区(3、3')的厚度的比率小于10-2。
28.根据权利要求27所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的接合区(3、3')的厚度的比率小于10-4。
29.根据权利要求28所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的接合区(3、3')的厚度的比率小于10-6。
30.根据权利要求29所述的方法，其中，所述固体牺牲层或所述液体牺牲层的厚度对所述第一基板(1、1')或所述第二基板的接合区(3、3')的厚度的比率小于10-8。
31.根据权利要求1所述的方法，其中，所述第一接触表面和所述第二接触表面中的至少一个由多个接合区(3、3')及环绕所述接合区(3、3')的块体材料(5)构造。
32.根据权利要求1所述的方法，其中，所述第一接触表面和所述第二接触表面中的至少一个以毯覆方式被布置在一个接合区(3)上。
33.根据权利要求1至5中任一项所述的方法，其中，所述第一接触表面是至少部分地为金属的接触表面，和/或所述第二接触表面是至少部分地为金属的接触表面。
34.根据权利要求1至5中任一项所述的方法，其中，所述方法具有以下进程：
-将固体牺牲层施加到所述第一接触表面和所述第二接触表面中的至少一个，
-将液体牺牲层施加到所述固体牺牲层上，
-接合所述第一基板(1、1')和所述第二基板，其中所述固体牺牲层和所述液体牺牲层在接合步骤期间溶解于环绕所述固体牺牲层和所述液体牺牲层的材料中或在界面上消耗。
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