CN110143025B - Backboard structure of glass substrate - Google Patents
Backboard structure of glass substrate Download PDFInfo
- Publication number
- CN110143025B CN110143025B CN201910261992.6A CN201910261992A CN110143025B CN 110143025 B CN110143025 B CN 110143025B CN 201910261992 A CN201910261992 A CN 201910261992A CN 110143025 B CN110143025 B CN 110143025B
- Authority
- CN
- China
- Prior art keywords
- glass substrate
- silicon nitride
- nitride layer
- holes
- hole
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000011521 glass Substances 0.000 title claims abstract description 89
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 81
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 81
- 230000000149 penetrating effect Effects 0.000 claims abstract description 12
- 229910003460 diamond Inorganic materials 0.000 claims description 5
- 239000010432 diamond Substances 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 229910004205 SiNX Inorganic materials 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B17/00—Layered products essentially comprising sheet glass, or glass, slag, or like fibres
- B32B17/06—Layered products essentially comprising sheet glass, or glass, slag, or like fibres comprising glass as the main or only constituent of a layer, next to another layer of a specific material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B3/00—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form
- B32B3/26—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer
- B32B3/266—Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar shape; Layered products comprising a layer having particular features of form characterised by a particular shape of the outline of the cross-section of a continuous layer; characterised by a layer with cavities or internal voids ; characterised by an apertured layer characterised by an apertured layer, the apertures going through the whole thickness of the layer, e.g. expanded metal, perforated layer, slit layer regular cells B32B3/12
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/133302—Rigid substrates, e.g. inorganic substrates
Landscapes
- Physics & Mathematics (AREA)
- Nonlinear Science (AREA)
- Mathematical Physics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
Abstract
The invention provides a backboard structure of a glass substrate, which comprises a glass substrate body and a silicon nitride layer; the upper surface of the silicon nitride layer is arranged on the lower surface of the glass substrate body; the left side and the right side of the position of the silicon nitride layer corresponding to the cutting position of the glass substrate body are symmetrically provided with a plurality of first through holes penetrating through the silicon nitride layer and a plurality of second through holes penetrating through the silicon nitride layer respectively, and the plurality of first through holes and the plurality of second through holes are uniformly distributed. According to the invention, through the through holes arranged on the left side and the right side of the cutting position of the silicon nitride layer, the stress generated on the silicon nitride layer during cutting can be effectively released, and the problems that the silicon nitride layer generates stress during cutting of the glass substrate, the silicon nitride layer generates cracks after the stress is accumulated to a certain degree, the normal use of the glass substrate is affected, and the adhesion of the glass substrate is reduced can be solved.
Description
Technical Field
The invention relates to the technical field of glass substrates of liquid crystal panels, in particular to a backboard structure of a glass substrate.
Background
The glass substrate of the liquid crystal panel comprises a glass substrate body and a silicon nitride SiNx layer arranged on the lower surface of the glass substrate body, when the glass substrate is cut, the stress in the SiNx insulating layer on the glass substrate can be gradually accumulated due to the action of external force, the SiNx insulating layer can be cracked when the stress reaches a certain degree, and the normal use of the glass substrate can be influenced due to uncertainty of the position generated by the crack.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: the invention provides a backboard structure of a glass substrate, which can ensure the normal use of the cut glass substrate.
In order to solve the technical problems, the invention provides a backboard structure of a glass substrate, which comprises a glass substrate body and a silicon nitride layer;
the upper surface of the silicon nitride layer is arranged on the lower surface of the glass substrate body; the left side and the right side of the position of the silicon nitride layer corresponding to the cutting position of the glass substrate body are symmetrically provided with a plurality of first through holes penetrating through the silicon nitride layer and a plurality of second through holes penetrating through the silicon nitride layer respectively, and the plurality of first through holes and the plurality of second through holes are uniformly distributed.
Further, the thickness of the glass substrate body is 0.2-0.5mm, and the thickness of the silicon nitride layer is 0.2-0.5mm.
Further, the upper surface of the glass substrate body is provided with a plurality of cutting lines, the left side of the silicon nitride layer corresponding to each cutting line is provided with a plurality of first through holes which are uniformly distributed, and the right side of the silicon nitride layer corresponding to each cutting line is provided with a plurality of second through holes which are uniformly distributed.
Further, the first through hole and the second through hole are symmetrically arranged about the corresponding cutting line.
Further, a plurality of first through holes distributed in a first array are formed in the left side of the silicon nitride layer, corresponding to each cutting line, and the first array is an array with a plurality of rows and two columns;
the right side of the silicon nitride layer corresponding to each cutting line is provided with a plurality of second through holes distributed in a second array, and the second array is an array with a plurality of rows and two columns.
Further, the size and shape of the first through hole are the same as those of the second through hole, and the first through hole and the second through hole are square through holes, diamond through holes or round through holes.
Further, the aperture of the circular through hole is 10um.
Further, the length and the width of the square through holes are equal, and are 10um.
Further, the side length of the diamond-shaped through hole is 10um.
Further, the first through hole and the second through hole are both positioned at positions outside the metal wiring in the silicon nitride layer.
The beneficial effects of the invention are as follows:
according to the back plate structure of the glass substrate, the through holes which are uniformly distributed and penetrate through the silicon nitride layer are symmetrically arranged on the left side and the right side of the cutting position of the glass substrate body, so that the through holes which are arranged on the left side and the right side of the cutting position of the silicon nitride layer can be used for effectively releasing stress generated on the silicon nitride layer during cutting when the glass substrate is cut, and the problems that the silicon nitride layer generates stress when the glass substrate is cut, the silicon nitride layer is cracked after the stress is accumulated to a certain degree, normal use of the glass substrate is affected and the adhesion of the glass substrate is reduced can be solved.
Drawings
FIG. 1 is a schematic cross-sectional view of a back plate structure of a glass substrate according to an embodiment of the present invention;
FIG. 2 is a bottom view of a back plate structure of a glass substrate according to an embodiment of the present invention;
FIG. 3 is a top view of a back plate structure of a glass substrate according to an embodiment of the present invention;
description of the reference numerals:
1. a glass substrate body; 2. a silicon nitride layer; 3. cutting lines; 4. a first through hole; 5. and a second through hole.
Detailed Description
In order to describe the technical contents, the achieved objects and effects of the present invention in detail, the following description will be made with reference to the embodiments in conjunction with the accompanying drawings.
The most critical conception of the invention is as follows: the upper surface of the silicon nitride layer is arranged on the lower surface of the glass substrate body; the left side and the right side of the cutting position of the glass substrate body on the silicon nitride layer are symmetrically provided with a plurality of first through holes penetrating through the silicon nitride layer and a plurality of second through holes penetrating through the silicon nitride layer respectively, and the first through holes and the second through holes are uniformly distributed.
Referring to fig. 1-3, the present invention provides a back plate structure of a glass substrate, which includes a glass substrate body and a silicon nitride layer;
the upper surface of the silicon nitride layer is arranged on the lower surface of the glass substrate body; the left side and the right side of the position of the silicon nitride layer corresponding to the cutting position of the glass substrate body are symmetrically provided with a plurality of first through holes penetrating through the silicon nitride layer and a plurality of second through holes penetrating through the silicon nitride layer respectively, and the plurality of first through holes and the plurality of second through holes are uniformly distributed.
As can be seen from the above description, in the back plate structure of a glass substrate provided by the present invention, a plurality of through holes which are uniformly distributed and penetrate through a silicon nitride layer are symmetrically disposed at the left and right sides of a cutting position of a glass substrate body, so that the through holes disposed at the left and right sides of the cutting position of the silicon nitride layer can effectively release stress generated on the silicon nitride layer during cutting when the glass substrate is cut, and the problems that the stress is generated on the silicon nitride layer during cutting of the glass substrate, the silicon nitride layer is cracked after the stress is accumulated to a certain extent, normal use of the glass substrate is affected, and the adhesion of the glass substrate is reduced can be solved.
Further, the thickness of the glass substrate body is 0.2-0.5mm, and the thickness of the silicon nitride layer is 0.2-0.5mm.
As is apparent from the above description, by providing the glass substrate body, the silicon nitride layer, and the through holes having the above thicknesses, the stress generated when cutting the glass substrate can be released to the maximum extent, and the normal use of the cut glass substrate can be ensured.
Further, the upper surface of the glass substrate body is provided with a plurality of cutting lines, the left side of the silicon nitride layer corresponding to each cutting line is provided with a plurality of first through holes which are uniformly distributed, and the right side of the silicon nitride layer corresponding to each cutting line is provided with a plurality of second through holes which are uniformly distributed.
As can be seen from the above description, the upper surface of the glass substrate body has a plurality of cutting lines, and through holes are formed on the left and right sides of each cutting line, so that a worker can be prompted to cut on the cutting line, which is beneficial to release of stress generated on the silicon nitride layer during cutting.
Further, the first through hole and the second through hole are symmetrically arranged about the corresponding cutting line.
As is apparent from the above description, with the above structure, it is possible to ensure that stresses generated on both the left and right sides of the glass substrate are released at the same time when cutting.
Further, a plurality of first through holes distributed in a first array are formed in the left side of the silicon nitride layer, corresponding to each cutting line, and the first array is an array with a plurality of rows and two columns;
the right side of the silicon nitride layer corresponding to each cutting line is provided with a plurality of second through holes distributed in a second array, and the second array is an array with a plurality of rows and two columns.
From the above description, it is apparent that by the above structure, the stress release on the silicon nitride layer can be ensured without affecting the normal use of the glass substrate.
Further, the size and shape of the first through hole are the same as those of the second through hole, and the first through hole and the second through hole are square through holes, diamond through holes or round through holes.
Further, the aperture of the circular through hole is 10um.
Further, the length and the width of the square through holes are equal, and are 10um.
Further, the side length of the diamond-shaped through hole is 10um.
As is apparent from the above description, the through-hole having the above shape can effectively release stress generated when the silicon nitride layer is cut into the glass substrate.
Further, the first through hole and the second through hole are both positioned at positions outside the metal wiring in the silicon nitride layer.
As can be seen from the above description, the above structure does not affect the normal use of the glass substrate; meanwhile, the cutting of the glass substrate in the invention refers to cutting the glass substrate and cutting the silicon nitride layer arranged on the lower surface of the glass substrate.
Referring to fig. 1-3, a first embodiment of the present invention is as follows:
the invention provides a backboard structure of a glass substrate, which comprises a glass substrate body 1 and a silicon nitride layer 2;
the upper surface of the silicon nitride layer 2 is arranged on the lower surface of the glass substrate body 1; the left side and the right side of the position, corresponding to the cutting position of the glass substrate body 1, of the silicon nitride layer 2 are symmetrically provided with a plurality of first through holes 4 penetrating through the silicon nitride layer 2 and a plurality of second through holes 5 penetrating through the silicon nitride layer 2, and the plurality of first through holes 4 and the plurality of second through holes 5 are uniformly distributed;
the thickness of the glass substrate body 1 is 0.2-0.5mm, and the thickness of the silicon nitride layer 2 is 0.2-0.5mm.
The second embodiment of the invention is as follows:
the difference between the second embodiment and the first embodiment is that the upper surface of the glass substrate body 1 has a plurality of cutting lines 3, the left side of the silicon nitride layer 2 corresponding to each cutting line 3 is provided with a plurality of uniformly distributed first through holes 4, and the right side of the silicon nitride layer 2 corresponding to each cutting line 3 is provided with a plurality of uniformly distributed second through holes 5; the first through hole 4 and the second through hole 5 are symmetrically arranged about the corresponding cutting line 3;
the size and the shape of the first through holes 4 are respectively the same as those of the second through holes 5, and the first through holes are square through holes, diamond through holes or round through holes; the aperture of the circular through hole is 10um; the length and the width of the square through holes are equal and are 10um; the side length of the diamond-shaped through hole is 10um; the first via 4 and the second via 5 are both located in the silicon nitride layer 2 at a position outside the metal tracks.
The third embodiment of the invention is as follows:
the difference between the third embodiment and the first embodiment is that the upper surface of the glass substrate body 1 has a plurality of cutting lines 3, and the left side of the silicon nitride layer 2 corresponding to each cutting line 3 is provided with a plurality of first through holes 4 distributed in a first array, and the first array is an array of multiple rows and two columns;
the right side of the silicon nitride layer 2, which corresponds to each cutting line 3, is provided with a plurality of second through holes 5 distributed in a second array, and the second array is an array of a plurality of rows and two columns;
the first through hole 4 and the second through hole 5 are symmetrically arranged about the corresponding cutting line 3;
the size and the shape of the first through holes 4 are respectively the same as those of the second through holes 5, and the first through holes are square through holes, diamond through holes or round through holes; the aperture of the circular through hole is 10um; the length and the width of the square through holes are equal and are 10um; the side length of the diamond-shaped through hole is 10um; the first through hole 4 and the second through hole 5 are both positioned at positions outside the metal wires in the silicon nitride layer 2; the distance between the center of a row of first through holes 4 close to the cutting line 3 and the cutting line 3 is 8-15um; the center of a row of second through holes 5 near the dicing line 3 is 8-15um away from the dicing line 3.
In the invention, through holes (a first through hole and a second through hole) for releasing stress are respectively arranged on the left side and the right side of a cutting line through a yellow light process in the process of manufacturing the glass substrate.
In summary, according to the back plate structure of the glass substrate provided by the invention, the plurality of through holes which are uniformly distributed and penetrate the silicon nitride layer are symmetrically arranged at the left side and the right side of the cutting position of the glass substrate body, so that the problem that the normal use of the glass substrate is affected and the adhesiveness of the glass substrate is reduced due to the fact that the through holes are arranged at the left side and the right side of the cutting position of the silicon nitride layer when the glass substrate is cut can be effectively released, and the problem that the stress is generated on the silicon nitride layer when the glass substrate is cut and the silicon nitride layer is cracked after the stress is accumulated to a certain degree can be solved. Meanwhile, through the arrangement of the glass substrate body, the silicon nitride layer and the through holes, stress generated when the glass substrate is cut can be released to the greatest extent, and normal use of the cut glass substrate is ensured; and the upper surface of the glass substrate body is provided with a plurality of cutting lines, and through holes are formed in the left side and the right side of each cutting line, so that workers can be prompted to cut on the cutting lines, and stress generated on the silicon nitride layer during cutting is released.
The foregoing description is only illustrative of the present invention and is not intended to limit the scope of the invention, and all equivalent changes made by the specification and drawings of the present invention, or direct or indirect application in other related technical fields, are included in the scope of the present invention.
Claims (6)
1. The backboard structure of the glass substrate is characterized by comprising a glass substrate body and a silicon nitride layer;
the upper surface of the silicon nitride layer is arranged on the lower surface of the glass substrate body; the left side and the right side of the position, corresponding to the cutting position of the glass substrate body, of the silicon nitride layer are symmetrically provided with a plurality of first through holes penetrating through the silicon nitride layer and a plurality of second through holes penetrating through the silicon nitride layer respectively, and the plurality of first through holes and the plurality of second through holes are uniformly distributed;
the thickness of the glass substrate body is 0.2-0.5mm, and the thickness of the silicon nitride layer is 0.2-0.5mm;
the upper surface of the glass substrate body is provided with a plurality of cutting lines, the left side of the silicon nitride layer, which corresponds to each cutting line, is provided with a plurality of first through holes which are uniformly distributed, and the right side of the silicon nitride layer, which corresponds to each cutting line, is provided with a plurality of second through holes which are uniformly distributed;
the first through holes and the second through holes are symmetrically arranged about corresponding cutting lines;
the first through hole and the second through hole are both positioned at positions outside the metal wires in the silicon nitride layer.
2. The back plate structure of the glass substrate according to claim 1, wherein a plurality of first through holes distributed in a first array are arranged on the left side of the silicon nitride layer corresponding to each cutting line, and the first array is an array of a plurality of rows and a plurality of columns;
the right side of the silicon nitride layer corresponding to each cutting line is provided with a plurality of second through holes distributed in a second array, and the second array is an array with a plurality of rows and two columns.
3. The back plate structure of a glass substrate according to claim 2, wherein the size and shape of the first through hole are the same as the size and shape of the second through hole, respectively, and are square through holes, diamond through holes or circular through holes.
4. A back plate structure of a glass substrate according to claim 3, wherein the diameter of the circular through hole is 10um.
5. A back plate structure of a glass substrate according to claim 3, wherein the square through holes have equal length and width, and are 10um.
6. A back plate structure of a glass substrate according to claim 3, wherein the side length of the diamond-shaped through hole is 10um.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910261992.6A CN110143025B (en) | 2019-04-02 | 2019-04-02 | Backboard structure of glass substrate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910261992.6A CN110143025B (en) | 2019-04-02 | 2019-04-02 | Backboard structure of glass substrate |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110143025A CN110143025A (en) | 2019-08-20 |
| CN110143025B true CN110143025B (en) | 2024-04-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910261992.6A Active CN110143025B (en) | 2019-04-02 | 2019-04-02 | Backboard structure of glass substrate |
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| Country | Link |
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203174A (en) * | 2000-01-20 | 2001-07-27 | Denso Corp | Method for cutting junctioned substrate and junctioned substrate |
| KR101409338B1 (en) * | 2014-04-24 | 2014-06-24 | 주식회사 엘티에스 | Method for cutting glass substrate |
| CN207659323U (en) * | 2017-12-05 | 2018-07-27 | 芜湖东旭光电装备技术有限公司 | Glass substrate cutter device |
| CN108598113A (en) * | 2018-04-24 | 2018-09-28 | 云谷（固安）科技有限公司 | Array substrate and display screen |
| CN109031820A (en) * | 2018-06-28 | 2018-12-18 | 武汉华星光电技术有限公司 | A kind of production method of array substrate, array substrate and display panel |
| CN109192881A (en) * | 2018-09-21 | 2019-01-11 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and its cutting method |
| CN209879199U (en) * | 2019-04-02 | 2019-12-31 | 福建华佳彩有限公司 | Novel backboard structure of glass substrate |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR102546692B1 (en) * | 2015-03-24 | 2023-06-22 | 코닝 인코포레이티드 | Laser Cutting and Processing of Display Glass Compositions |
-
2019
- 2019-04-02 CN CN201910261992.6A patent/CN110143025B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001203174A (en) * | 2000-01-20 | 2001-07-27 | Denso Corp | Method for cutting junctioned substrate and junctioned substrate |
| KR101409338B1 (en) * | 2014-04-24 | 2014-06-24 | 주식회사 엘티에스 | Method for cutting glass substrate |
| CN207659323U (en) * | 2017-12-05 | 2018-07-27 | 芜湖东旭光电装备技术有限公司 | Glass substrate cutter device |
| CN108598113A (en) * | 2018-04-24 | 2018-09-28 | 云谷（固安）科技有限公司 | Array substrate and display screen |
| CN109031820A (en) * | 2018-06-28 | 2018-12-18 | 武汉华星光电技术有限公司 | A kind of production method of array substrate, array substrate and display panel |
| CN109192881A (en) * | 2018-09-21 | 2019-01-11 | 武汉华星光电半导体显示技术有限公司 | Organic LED display panel and its cutting method |
| CN209879199U (en) * | 2019-04-02 | 2019-12-31 | 福建华佳彩有限公司 | Novel backboard structure of glass substrate |
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| Publication number | Publication date |
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| CN110143025A (en) | 2019-08-20 |
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