CN110108776A - A kind of method and system detecting bonded wafer bond strength - Google Patents
A kind of method and system detecting bonded wafer bond strength Download PDFInfo
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- CN110108776A CN110108776A CN201910388275.XA CN201910388275A CN110108776A CN 110108776 A CN110108776 A CN 110108776A CN 201910388275 A CN201910388275 A CN 201910388275A CN 110108776 A CN110108776 A CN 110108776A
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Abstract
The present invention provides a kind of method and system for detecting bonded wafer bond strength, the bonded wafer includes the first wafer and the second wafer, which comprises the surface charge of detection bonding the first wafer of the foregoing description obtains first quantity of electric charge；The surface charge of first wafer, obtains second quantity of electric charge after detection bonding；The difference of second quantity of electric charge Yu first quantity of electric charge is calculated, and judges the difference of second quantity of electric charge and first quantity of electric charge whether in the first preset range；If so, determining that the bond strength of the bonded wafer is qualified；If it is not, then determining that the bond strength of the bonded wafer is unqualified.The method and system of detection bonded wafer bond strength provided by the invention, can not only detect the bond strength of bonded wafer, and will not the structure of para-linkage wafer damage, so as to reduce the bond strength testing cost of bonded wafer.
Description
Technical field
The present invention relates to technical field of manufacturing semiconductors, more specifically to a kind of detection bonded wafer bond strength
Method and system.
Background technique
The appearance of three dimensional integrated circuits provides new direction for the sustainable development of semiconductor technology and microelectric technique.
So-called three dimensional integrated circuits refer to device wafers and carrying wafer bonding formation bonded wafer with integrated circuit, and lead to
Cross the integrated circuit for penetrating the electrical connection between the interconnection structure realization multilayer circuit of bonded wafer.
Since bond strength is the important ginseng that is related to bonding quality and follow-up process and whether can go on smoothly
Number, therefore, needs to detect its bond strength after forming bonded wafer.It is by making to be bonded boundary mostly in the prior art
Face cracking power used characterizes bond strength, and still, existing bonding force measuring method such as blade insertion is to being bonded boundary
During blade is inserted into face, the structure of bonded wafer can be destroyed, so that the wafer after measurement can not be made into product, causes to test
Higher cost.
Summary of the invention
In view of this, the present invention provides a kind of method and system for detecting bonded wafer bond strength, in detection key
While closing wafer bonding intensity, the structure of bonded wafer is not destroyed.
To achieve the above object, the invention provides the following technical scheme:
A method of detection bonded wafer bond strength, the bonded wafer include the first wafer and the second wafer, institute
The method of stating includes:
The surface charge of detection bonding the first wafer of the foregoing description, obtains first quantity of electric charge；
The surface charge of first wafer, obtains second quantity of electric charge after detection bonding；
The difference of second quantity of electric charge Yu first quantity of electric charge is calculated, and judges second quantity of electric charge and described the
Whether the difference of one quantity of electric charge is in the first preset range；
If so, determining that the bond strength of the bonded wafer is qualified；
If it is not, then determining that the bond strength of the bonded wafer is unqualified.
Optionally, before determining that the bond strength of the bonded wafer is qualified, further includes:
The difference of the 4th quantity of electric charge and the third quantity of electric charge is calculated, and judges the 4th quantity of electric charge and the third quantity of electric charge
Difference whether in the second preset range, the third quantity of electric charge be second wafer measure before bonding surface electricity
Lotus amount, the 4th quantity of electric charge are the surface charge amount that second wafer measures after bonding；
If so, determining that the bond strength of the bonded wafer is qualified；
If it is not, then determining that the bond strength of the bonded wafer is unqualified.
Optionally, first wafer is device wafers, and second wafer is carrying wafer.
Optionally, first wafer is carrying wafer, and second wafer is device wafers.
Optionally, first preset range is 3 × 106q/cm2~7 × 106q/cm2；
Second preset range is 3 × 106q/cm2~7 × 106q/cm2。
A kind of system detecting bonded wafer bond strength, the bonded wafer include the first wafer and the second wafer, institute
The system of stating includes:
Detection module obtains first quantity of electric charge, detects key for detecting the surface charge of bonding the first wafer of the foregoing description
The surface charge of first wafer, obtains second quantity of electric charge after conjunction；
Processing module for calculating the difference of second quantity of electric charge Yu first quantity of electric charge, and judges described second
Whether the difference of the quantity of electric charge and first quantity of electric charge is in the first preset range, if so, determining the key of the bonded wafer
It is qualified to close intensity, if it is not, then determining that the bond strength of the bonded wafer is unqualified.
Optionally, the detection module is also used to detect the surface charge of bonding the second wafer of the foregoing description, obtains third
The quantity of electric charge, the surface charge of second wafer, obtains the 4th quantity of electric charge after detection bonding；
The processing module is also used to calculate the difference of the 4th quantity of electric charge and the third quantity of electric charge, and judges the 4th charge
Whether in the second preset range, the third quantity of electric charge is second wafer in key for amount and the difference of the third quantity of electric charge
The surface charge amount measured before closing, the 4th quantity of electric charge are the surface charge that second wafer measures after bonding
Amount；If so, determining that the bond strength of the bonded wafer is qualified；If it is not, then determining the bond strength of the bonded wafer not
It is qualified.
Optionally, first wafer is device wafers, and second wafer is carrying wafer.
Optionally, first wafer is carrying wafer, and second wafer is device wafers.
Optionally, first preset range is 3 × 106q/cm2~7 × 106q/cm2；
Second preset range is 3 × 106q/cm2~7 × 106q/cm2。
Compared with prior art, the technical scheme provided by the invention has the following advantages:
It is provided by the present invention detection bonded wafer bond strength method and system, by calculate bonding after be bonded
The surface charge amount difference of first wafer before, and the difference is judged whether in the first preset range, to judge bonded wafer
Bond strength it is whether qualified.Since surface charge incrementss can reflect the inside bonding situation of entire bonded wafer,
The method and system of detection bonded wafer bond strength provided by the invention, can not only detect the bond strength of bonded wafer,
And will not the structure of para-linkage wafer damage, so as to reduce the bond strength testing cost of bonded wafer.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is the structural schematic diagram of bonded wafer provided in an embodiment of the present invention；
Fig. 2 is a kind of method flow diagram for detecting bonded wafer bond strength provided in an embodiment of the present invention；
Fig. 3 is the method flow diagram of another detection bonded wafer bond strength provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of system for detecting bonded wafer bond strength provided in an embodiment of the present invention.
Specific embodiment
As described in background, the structure of existing bonded wafer bond strength detection method meeting para-linkage wafer causes
It destroys, causes the bond strength testing cost of bonded wafer higher.
Based on this, the embodiment of the invention provides a kind of methods for detecting bonded wafer bond strength, to overcome existing skill
The above problem existing for art, the bonded wafer include the first wafer and the second wafer, which comprises
The surface charge of detection bonding the first wafer of the foregoing description, obtains first quantity of electric charge；
The surface charge of first wafer, obtains second quantity of electric charge after detection bonding；
The difference of second quantity of electric charge Yu first quantity of electric charge is calculated, and judges second quantity of electric charge and described the
Whether the difference of one quantity of electric charge is in the first preset range；
If so, determining that the bond strength of the bonded wafer is qualified；
If it is not, then determining that the bond strength of the bonded wafer is unqualified.
The embodiment of the invention also provides a kind of system for detecting bonded wafer bond strength, the bonded wafer includes the
One wafer and the second wafer, the system comprises:
Detection module obtains first quantity of electric charge, detects key for detecting the surface charge of bonding the first wafer of the foregoing description
The surface charge of first wafer, obtains second quantity of electric charge after conjunction；
Processing module for calculating the difference of second quantity of electric charge Yu first quantity of electric charge, and judges described second
Whether the difference of the quantity of electric charge and first quantity of electric charge is in the first preset range, if so, determining the key of the bonded wafer
It is qualified to close intensity, if it is not, then determining that the bond strength of the bonded wafer is unqualified.
Since surface charge incrementss can reflect the inside bonding situation of entire bonded wafer, the present invention is implemented
The method and system for the detection bonded wafer bond strength that example provides, can not only detect the bond strength of bonded wafer, and
Will not the structure of para-linkage wafer damage, so as to reduce the bond strength testing cost of bonded wafer.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, implement below in conjunction with the present invention
Attached drawing in example, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment
Only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, the common skill in this field
Art personnel every other embodiment obtained without making creative work belongs to the model that the present invention protects
It encloses.
The embodiment of the invention provides a kind of methods for detecting bonded wafer bond strength, as shown in Figure 1, the bonded wafer
Including the first wafer 1 and the second wafer 2, as shown in Fig. 2, this method comprises:
S1: the surface charge of the first wafer before detection bonding obtains first quantity of electric charge；
S2: the surface charge of the first wafer after detection bonding obtains second quantity of electric charge；
S3: the difference of second quantity of electric charge and first quantity of electric charge is calculated, and judges the difference of second quantity of electric charge and first quantity of electric charge
Whether value is in the first preset range, if so, into S4；If it is not, into S5；
S4: determine that the bond strength of bonded wafer is qualified；
S5: determine that the bond strength of bonded wafer is unqualified.
In the embodiment of the present invention, before the first wafer 1 and the second wafer 2 are bonded together, the first wafer 1 is first detected
Surface charge, obtain first quantity of electric charge, bond together to form bonded wafer and then detection the in the first wafer 1 and the second wafer 2
The surface charge of one wafer 1, obtains second quantity of electric charge, and after the difference for calculating second quantity of electric charge and first quantity of electric charge, judgement should
Whether difference is in the first preset range, if determining that the bond strength of the bonded wafer is qualified in the first preset range,
If determining that the bond strength of the bonded wafer is unqualified not in the first preset range.
It should be noted that the bonding technology of the first wafer 1 and the second wafer 2 in the embodiment of the present invention is plasma
Activating process.Since the bonding of the first wafer 1 and the second wafer 2 is beaten by the surface of the first wafer of plasma bombardment 1
It opens the Si-O key of the first wafer 1, bombard the surface of the second wafer 2 to open the Si-O key of the second wafer 2, then make the first wafer 1
Si and the second wafer 2 O or the first wafer 1 O and the second wafer 2 Si, connection forms the technique of Si-O key again, because
This, the first wafer 1 and the second wafer 2 bonding after, the quantity of electric charge of crystal column surface can increased, the incrementss of charge with again
It is related that new connection forms Si-O key, and connection again forms that Si-O key is more, and the incrementss of charge are bigger, and the bonding of bonded wafer is strong
It spends stronger.
Based on this, only corresponding charge incrementss need to be selected according to the bond strength needed for practical application, i.e. selection is corresponding
Preset range, can judge to be bonded according to the difference of second quantity of electric charge and first quantity of electric charge whether in the first preset range
Whether the bond strength of wafer is qualified.Optionally, the first preset range in the embodiment of the present invention is 3 × 106q/cm2~7 ×
106q/cm2, still optionally further, the first preset range is 3.238 × 106q/cm2~6.398 × 106q/cm2。
In the embodiment of the present invention, it can judge that bonding is brilliant according to the surface charge incrementss of wafer any in bonded wafer
Round bonding situation.Certainly, the present invention is not limited to this, in other embodiments, can also be according to two in bonded wafer
The surface charge incrementss of wafer judge the bonding situation of bonded wafer, to improve the accurate of bonded wafer bond strength judgement
Degree.
As shown in figure 3, after the difference of first quantity of electric charge of judgement and second quantity of electric charge is in the first preset range, alternatively,
Into before S4, further includes:
S6: the difference of the 4th quantity of electric charge and the third quantity of electric charge is calculated, and judges the difference of the 4th quantity of electric charge and the third quantity of electric charge
Whether in the second preset range, the third quantity of electric charge is the surface charge amount that the second wafer measures before bonding, the 4th electricity to value
Lotus amount is the surface charge amount that the second wafer measures after bonding, if so, into S4；If it is not, into S5；
S4: determine that the bond strength of bonded wafer is qualified；
S5: determine that the bond strength of bonded wafer is unqualified.
Optionally, the second preset range in the embodiment of the present invention is 3 × 106q/cm2~7 × 106q/cm2, further may be used
Selection of land, the second preset range are 3.238 × 106q/cm2~6.398 × 106q/cm2。
It should be noted that can be surveyed using surface charge tester table to surface charge amount in the embodiment of the present invention
Amount.It needs further exist for illustrating, in the embodiment of the present invention, respectively before bonding and after bonding, the first wafer 1 is deviated from
The surface charge amount of second wafer, 2 one side surface is detected to obtain corresponding first quantity of electric charge and second quantity of electric charge,
Equally, and by the second wafer 2 before detecting bonding respectively and after bonding deviate from the surface of 1 one side surface of the first wafer
The quantity of electric charge obtains the corresponding third quantity of electric charge and the 4th quantity of electric charge.
Since surface charge test process will not destroy the structure of bonded wafer, provided by the embodiment of the present invention
The method for detecting bonded wafer bond strength it is brilliant can to detect bonding while the structure of not para-linkage wafer damages
Round bond strength reduces the bond strength testing cost of bonded wafer.Also, it is detected as provided by the embodiment of the present invention
The method of bonded wafer bond strength, it is simple to operate quick, it therefore, can be during bonded wafer be bonded, quickly
The bonding situation for accurately detecting bonding machine platform, finds the exception of bonding machine platform in time, reduces impacted wafer, promotes product
Yield.
Optionally, the first wafer 1 in the embodiment of the present invention is device wafers, and the second wafer 2 is carrying wafer.In this hair
The first wafer 1 can also be carrying wafer in bright another embodiment, and the second wafer 2 can also be device wafers.
It should be noted that carrying wafer on be provided with circuit structure 11, the circuit structure 11 include combinational logic circuit,
Sequential logical circuit etc. provides connection carrier by the circuit structure 11 for the bonding of wafer；It is provided in device wafers and electricity
The corresponding device architecture 21 of line structure 11, the device architecture 21 include MEMS, memory and inductor etc., the device junction
Structure 21 has the function of micro-system, storage, sensor etc..
The embodiment of the invention also provides a kind of systems for detecting bonded wafer bond strength, as shown in Figure 1, the bonding is brilliant
Circle includes the first wafer 1 and the second wafer 2, as shown in figure 4, the system includes detection module 3 and processing module 4.
Wherein, detection module 3 is used to detect the surface charge of the first wafer 1 before bonding, obtains first quantity of electric charge, detects
The surface charge of the first wafer 1, obtains second quantity of electric charge after bonding；
Processing module 4 is used to calculate the difference of second quantity of electric charge and first quantity of electric charge, and judges second quantity of electric charge and first
Whether the difference of the quantity of electric charge is in the first preset range, if so, determining that the bond strength of bonded wafer is qualified, if it is not, then sentencing
The bond strength for determining bonded wafer is unqualified.
In the embodiment of the present invention, it can judge that bonding is brilliant according to the surface charge incrementss of wafer any in bonded wafer
Round bonding situation can also judge the bonding of bonded wafer according to the surface charge incrementss of two wafers in bonded wafer
Situation, to improve the accuracy of bonded wafer bond strength judgement.
Based on this, the detection module 3 in the embodiment of the present invention is also used to detect the surface electricity of the second wafer 2 before bonding
Lotus obtains the third quantity of electric charge, and the surface charge of the second wafer 2, obtains the 4th quantity of electric charge after detection bonding.Processing module 4 is also
For calculating the difference of the 4th quantity of electric charge and the third quantity of electric charge, and judge the 4th quantity of electric charge and the third quantity of electric charge difference whether
In second preset range, the third quantity of electric charge is the surface charge amount that measures before bonding of the second wafer, and the 4th quantity of electric charge is the
The surface charge amount that two wafers measure after bonding, if so, determining that the bond strength of bonded wafer is qualified；If it is not, then sentencing
The bond strength for determining bonded wafer is unqualified.
Optionally, the first preset range in the embodiment of the present invention is 3 × 106q/cm2~7 × 106q/cm2, further may be used
Selection of land, the first preset range are 3.238 × 106q/cm2~6.398 × 106q/cm2.Optionally, in the embodiment of the present invention
Two preset ranges are 3 × 106q/cm2~7 × 106q/cm2, still optionally further, the second preset range is 3.238 × 106q/cm2
~6.398 × 106q/cm2。
In the embodiment of the present invention, detection module 3 is surface charge tester table.Processing module 4 can be processor or meter
Calculation machine etc..After the completion of detection module 3 detects, it will test data and be transmitted to processing module 4, so that processing module 4 is according to testing number
According to being calculated and judged.
Optionally, the first wafer 1 in the embodiment of the present invention is device wafers, and the second wafer 2 is carrying wafer.In this hair
The first wafer 1 can also be carrying wafer in bright another embodiment, and the second wafer 2 can also be device wafers.
It should be noted that carrying wafer on be provided with circuit structure 11, the circuit structure 11 include combinational logic circuit,
Sequential logical circuit etc. provides connection carrier by the circuit structure 11 for the bonding of wafer；It is provided in device wafers and electricity
The corresponding device architecture 21 of line structure 11, the device architecture 21 include MEMS, memory and inductor etc., the device junction
Structure 21 has the function of micro-system, storage, sensor etc..
The system of detection bonded wafer bond strength provided by the embodiment of the present invention, can be in the knot of not para-linkage wafer
While being configured to destroy, the bond strength of bonded wafer is detected, the bond strength testing cost of bonded wafer is reduced.Also,
The system that bonded wafer bond strength is detected as provided by the embodiment of the present invention, it is simple to operate quick, it therefore, can be with
During bonded wafer bonding, the bonding situation of bonding machine platform is rapidly and accurately detected, finds the different of bonding machine platform in time
Often, impacted wafer is reduced, the yield of product is promoted.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.To the upper of the disclosed embodiments
It states bright, enables those skilled in the art to implement or use the present invention.Various modifications to these embodiments are to ability
Will be apparent for the professional technician in domain, the general principles defined herein can not depart from it is of the invention
In the case where spirit or scope, realize in other embodiments.Therefore, the present invention be not intended to be limited to it is shown in this article these
Embodiment, and it is to fit to the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. a kind of method for detecting bonded wafer bond strength, the bonded wafer includes the first wafer and the second wafer, spy
Sign is, which comprises
The surface charge of detection bonding the first wafer of the foregoing description, obtains first quantity of electric charge；
The surface charge of first wafer, obtains second quantity of electric charge after detection bonding；
The difference of second quantity of electric charge Yu first quantity of electric charge is calculated, and judges second quantity of electric charge and first electricity
Whether the difference of lotus amount is in the first preset range；
If so, determining that the bond strength of the bonded wafer is qualified；
If it is not, then determining that the bond strength of the bonded wafer is unqualified.
2. the method according to claim 1, wherein before determining that the bond strength of the bonded wafer is qualified,
Further include:
The difference of the 4th quantity of electric charge and the third quantity of electric charge is calculated, and judges the difference of the 4th quantity of electric charge and the third quantity of electric charge
Whether in the second preset range, the third quantity of electric charge is the surface charge that second wafer measures before bonding to value
Amount, the 4th quantity of electric charge are the surface charge amount that second wafer measures after bonding；
If so, determining that the bond strength of the bonded wafer is qualified；
If it is not, then determining that the bond strength of the bonded wafer is unqualified.
3. method according to claim 1 or 2, which is characterized in that first wafer is device wafers, and described second is brilliant
Circle is carrying wafer.
4. method according to claim 1 or 2, which is characterized in that first wafer is carrying wafer, and described second is brilliant
Circle is device wafers.
5. according to the method described in claim 2, it is characterized in that, first preset range is 3 × 106q/cm2~7 ×
106q/cm2；
Second preset range is 3 × 106q/cm2~7 × 106q/cm2。
6. a kind of system for detecting bonded wafer bond strength, the bonded wafer includes the first wafer and the second wafer, spy
Sign is, the system comprises:
Detection module obtains first quantity of electric charge, detects bonding for detecting the surface charge of bonding the first wafer of the foregoing description
The surface charge of first wafer afterwards, obtains second quantity of electric charge；
Processing module for calculating the difference of second quantity of electric charge Yu first quantity of electric charge, and judges second charge
Whether amount and the difference of first quantity of electric charge are in the first preset range, if so, determining that the bonding of the bonded wafer is strong
Degree is qualified, if it is not, then determining that the bond strength of the bonded wafer is unqualified.
7. system according to claim 6, which is characterized in that the detection module is also used to detect the bonding foregoing description the
The surface charge of two wafers obtains the third quantity of electric charge, and the surface charge of second wafer after detection bonding obtains the 4th electricity
Lotus amount；
The processing module is also used to calculate the difference of the 4th quantity of electric charge and the third quantity of electric charge, and judge the 4th quantity of electric charge with
Whether in the second preset range, the third quantity of electric charge is second wafer in bonding to the difference of the third quantity of electric charge
Before the surface charge amount that measures, the 4th quantity of electric charge is the surface charge amount that second wafer measures after bonding；If
It is then to determine that the bond strength of the bonded wafer is qualified；If it is not, then determining that the bond strength of the bonded wafer is unqualified.
8. system according to claim 6 or 7, which is characterized in that first wafer is device wafers, and described second is brilliant
Circle is carrying wafer.
9. system according to claim 6 or 7, which is characterized in that first wafer is carrying wafer, and described second is brilliant
Circle is device wafers.
10. system according to claim 7, which is characterized in that first preset range is 3 × 106q/cm2~7 ×
106q/cm2；
Second preset range is 3 × 106q/cm2~7 × 106q/cm2。
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Cited By (3)
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| CN110459485A (en) * | 2019-08-15 | 2019-11-15 | 德淮半导体有限公司 | Wafer scission of link intensity detecting device and detection method |
| CN114497322A (en) * | 2022-03-31 | 2022-05-13 | 江西兆驰半导体有限公司 | A method of fabricating a flip-chip structure |
| CN117116787A (en) * | 2023-10-24 | 2023-11-24 | 苏州芯慧联半导体科技有限公司 | Wafer bonding method and system |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110459485A (en) * | 2019-08-15 | 2019-11-15 | 德淮半导体有限公司 | Wafer scission of link intensity detecting device and detection method |
| CN114497322A (en) * | 2022-03-31 | 2022-05-13 | 江西兆驰半导体有限公司 | A method of fabricating a flip-chip structure |
| CN117116787A (en) * | 2023-10-24 | 2023-11-24 | 苏州芯慧联半导体科技有限公司 | Wafer bonding method and system |
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